TW533112B - System for cleaning heating chamber - Google Patents

System for cleaning heating chamber Download PDF

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Publication number
TW533112B
TW533112B TW91105973A TW91105973A TW533112B TW 533112 B TW533112 B TW 533112B TW 91105973 A TW91105973 A TW 91105973A TW 91105973 A TW91105973 A TW 91105973A TW 533112 B TW533112 B TW 533112B
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Taiwan
Prior art keywords
heating chamber
heating
gas
scope
purification system
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TW91105973A
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Chinese (zh)
Inventor
Liu-Chung Lee
Yu-Ming Lee
Da-Shuane Kuan
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Au Optronics Corp
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Priority to TW91105973A priority Critical patent/TW533112B/en
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Publication of TW533112B publication Critical patent/TW533112B/en

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Abstract

A system for cleaning a heating chamber comprises installing an air pipe in the heating chamber. The air pipe is installed along the inner wall of the heating chamber in order to use the heat of the heating chamber to heat up the air for cleaning and flowing in the air pipe. The air pipe is connected to a nozzle installed corresponding to a heating plate so that the air for cleaning and flowing in the air pipe is heated by the heat source of the heating chamber, so that the air ejected from the nozzle will not cause a deformation on the heating plate due to a temperature difference.

Description

533112 五、發明說明(1) 知:於產業氣私中’須南溫加熱之★舞合多有所見,即以 顯不器之玻璃基板鍍膜作業而言,亦須透過高溫方式以進 行’而在其他產業中亦不乏高溫環境下作業之場合。 若以TFT-LCD產業之製程觀之,其玻璃基板在電漿加 強型化學氣相蒸鍍(PECVD)製程中之鍍膜為例,玻璃基板 於進入處理室(process chamber)為鍍膜前,必須先在一 =熱室(heat chamber)内預熱,該預熱溫度係控制於一定 範圍内,例如為2 5 0〜3 0 0。(:,停留之時間大約為j〜2 〇分鐘 左右。 為了獲致熱源,如圖一所示者,係為習知之加熱室之 斷面圖,其係利用金屬片匣A(ffletai cassette)内之若干 層加熱板(heating sheet)為加熱器,玻璃基板則放置於 金屬片EA内之各層加熱板之間為預熱;由於玻璃基板之 進出加熱室預熱,是靠金屬片匣A之上升或下降,再由機 器手臂(robot)送入或搬出,因此造成玻璃基板振動而產 生微粒問題(particle issue),所以,於預熱並取出玻璃 基板後,必須淨化該加熱室。 習知之加熱室内為淨化之動作,係以氮氣(N2)輸入加 熱室’而氮氣之溫度係遠較加熱室之預熱溫度為低,其溫 度例如為2 0 °C ;因此,若驟然輸入氮氣來淨化加熱室,則 由於溫差太大,會使得加熱板瞬間降溫,致使材料變形, 導致加熱板之壽命受損。因此,為了使其溫差不致太大, 習知之方法係於停機並取出玻璃基板後,等待一段自然降 溫之時間’俾於降溫後再行輸入氮氣淨化之。而該氮氣係533112 V. Description of the invention (1) Knowing: 'In the industrial gas industry,' Wu Nanwen heating ★ Wuhe is often seen, that is, for the glass substrate coating operation of the display device, it must also be carried out through high temperature method '. In other industries, there are no shortage of occasions to work under high temperature environment. Taking the process of the TFT-LCD industry as an example, the coating of glass substrates in the plasma enhanced chemical vapor deposition (PECVD) process is taken as an example. Before the glass substrates are coated in the process chamber, they must be coated. Preheating is performed in a heat chamber, and the preheating temperature is controlled within a certain range, for example, 2 50 ~ 300. (: The staying time is about j ~ 20 minutes. In order to obtain the heat source, as shown in Figure 1, it is a cross-sectional view of a conventional heating chamber, which uses the inside of a metal cassette A (ffletai cassette). Several layers of heating sheets are heaters, and the glass substrate is placed between the layers of heating plates in the metal sheet EA for pre-heating; as the glass substrate is preheated in and out of the heating chamber, it is caused by the rise of the metal sheet box A or It is lowered and then sent in or out by a robot, which causes the glass substrate to vibrate and cause particle issues. Therefore, after preheating and removing the glass substrate, the heating chamber must be purified. The heating chamber is known as The purifying action is to input nitrogen (N2) into the heating chamber, and the temperature of the nitrogen is much lower than the preheating temperature of the heating chamber, and the temperature is, for example, 20 ° C. Therefore, if nitrogen is suddenly input to purify the heating chamber, However, because the temperature difference is too large, the heating plate will be instantly cooled, which will cause the material to deform and cause the life of the heating plate to be damaged. Therefore, in order to make the temperature difference not too large, the conventional method is to stop and take After coming out of the glass substrate, wait for a period of time for natural cooling. After cooling down, input nitrogen to purify it. The nitrogen system is

«3112«3112

五、發明說明(2) tm’ ^:侧之輸入口b處輸入,而氮氣被輸 :内量過大時,則必須打開加熱室上罩,清除加熱 置肤ΐ種:^if缺ΐ在於此待機時間使加熱室處於間 夏狀態,自然會降低加熱室之有效利用率。 之缍ί鑑於此猫:請人乃本於長年來從事製程研發與設計 ϊ:::潛心?究,期能克服上述缺失,經再三探索,始 則作出本案之「加熱室淨化系統」。 首先請參閱圖 圖一為本案之加 為進一步揭示本案之具體技術内容 式,其中,圖一為習知之加熱室斷面圖 熱室斷面圖,圖三為本案之淨化示意圖 本案發明係將淨化氣體管路由習知管路接入加埶室 ,形罩(bell jar),管路沿著鐘形罩内壁以例如螺^之方 式上至頂部,此為加溫之入氣管管路;再由頂端接上噴 s路,使其淨化氣體出口位置分別對準金屬片匣之每個枰 (slot)之入口,為提高淨化之效率,出口端之噴嘴數可^ 加為數個,以及將喷嘴之喷出口改良成錐狀,以增加出二 流速,提高淨化粉塵之效果。入口淨化氣體在例如螺旋狀 環繞鐘形罩内壁時,利用加熱板熱源加溫淨化氣體的溫 度,使淨化氣體與加熱板接觸時,溫差不會過大,造成加 熱板的變形’‘因此可使淨化系統於高溫下執行循環淨化 (cycle purge)。本案發明可改良習知技術中加熱室淨化 氣體管路入口只有一個位在加熱室中間立未對準金屬片匣V. Description of the invention (2) tm '^: input at the side input port b, and nitrogen is input: when the internal amount is too large, you must open the upper cover of the heating chamber to clear the heating skin type: ^ if the lack is here The standby time puts the heating chamber in the midsummer state, which naturally reduces the effective utilization of the heating chamber. In view of this cat: Please Renaiben has been engaged in process research and development and design for many years ϊ ::: Concentrated? In order to overcome the above-mentioned shortcomings, after repeated exploration, the "heating room purification system" in this case was made. Firstly, please refer to FIG. 1. This is a formula for further revealing the specific technical content of the case. Among them, FIG. 1 is a conventional sectional view of a heating chamber. FIG. 3 is a schematic diagram of the purification of the case. The gas pipe is connected to the bellows chamber with a conventional pipe, a bell jar, and the pipe goes up to the top along the inner wall of the bell jar, for example, by means of a screw ^. This is a heated gas pipe; The top end is connected to the spray s path, so that the position of the purified gas outlet is respectively aligned with the inlet of each slot of the metal sheet cassette. In order to improve the efficiency of purification, the number of nozzles at the outlet end can be added to several, and The nozzle is modified into a cone shape to increase the secondary flow rate and improve the dust purification effect. For example, when the inlet purification gas spirals around the inner wall of the bell-shaped cover, the heating plate heat source is used to heat the temperature of the purification gas, so that the temperature difference between the purification gas and the heating plate will not be too large, which will cause the deformation of the heating plate. The system performs cycle purge at high temperatures. The invention of the present invention can improve the heating chamber purification in the conventional technology. There is only one gas pipe inlet at the center of the heating chamber, which has a misaligned metal cassette.

IH1 第5頁 533112 五、發明說明(3) 槽(slot)之入口之今斗 <叹计,不但循環淨化(c l η 果差’且浪費淨化氣體之缺點。藉由本 效 可直接利用淨化氣體帶丰^要Ϊ掉加熱板之電源,就 (CyCle P㈣e)主熱室之熱量’執行循環淨化 鈾杆箱防仅美鈿短降溫時間。改良習知技術中,當要 執灯預防保養而要打開加熱室時,須先自 西 要 防保養(PM)時間以及機二 \ '皿,浪費預 太發明之主要目的,係在於利用加執室 本身·、、、源來楗昇淨化氣體之溫度,使自喷嘴喷 體溫度與加熱板之溫度相近,因&,加不:驟 降而發生彎曲,造成使用壽命下降之缺點板不㈢因,皿度驟 自喷月,另:目㈤’係在於入氣管管路之設計,使 可縮4Γ Λη勒淨化氣體溫度可取決於加熱板之溫度,如此 縮短加熱室於預防保養(ΡΜ)時降溫之時間。 ί ί發明之再一㈣’係在於改良淨化氣體之入口管路及 ,增加循環淨化(cycle purge)的效率。 二所示,本案之淨化系統係於加熱室之内壁,設 $萬迴旋之入氣管1,並連結若干噴氣管2而成。其中,入 =二=加熱室中之設置,可為至少繞行加熱室内壁一圈, H碇於其中之至少一内壁上等之適當設計,其繞行長度 ^夠利用加熱室之本身熱源將流動於入氣管内之淨化用 氟體加溫者。 u 其中’入氣管1於進入加熱室前可具一入氣管接頭 ’俾於加熱室内部需維修時,可藉由分離此接頭後打開IH1 Page 5 533112 V. Description of the invention (3) The present bucket & sigh meter at the entrance of the slot not only has the disadvantages of cyclic purification (cl η is poor) and waste of purified gas. With this effect, the purified gas can be used directly To remove the power from the heating plate, perform the cycle purification of the uranium rod box in the (CyCle P㈣e) main heating chamber to prevent the short cooling time. In the improved conventional technology, when the lamp is required to prevent the maintenance, it is necessary to When opening the heating chamber, it is necessary to prevent the maintenance time (PM) and the machine from the west. The main purpose of wasting the invention is to use the processing chamber itself to increase the temperature of the purified gas. The temperature of the self-nozzle spray body is similar to the temperature of the heating plate. Due to & It is based on the design of the air inlet pipe, so that the temperature of the purgeable gas that can be reduced by 4Γ ΛηLE can depend on the temperature of the heating plate, so as to shorten the cooling time of the heating chamber during preventive maintenance (PM). Lies in the improvement of the purification gas The pipeline and increase the efficiency of cycle purge. As shown in the second, the purification system of this case is located on the inner wall of the heating chamber, which is provided with a gas inlet pipe 1 of $ 10,000 and is connected with a number of gas injection pipes 2. Among them, = 二 = The setting in the heating chamber can be a suitable design that at least circulates around the inner wall of the heating chamber, H is placed on at least one of the inner walls, etc., and its detour length is sufficient to use the heat source itself to flow into the heating chamber. Those purifying the fluorine gas in the air pipe for heating. U Among them, 'the air pipe 1 can have an air pipe joint before entering the heating chamber'. When the interior of the heating chamber needs maintenance, it can be opened by separating this joint.

IHHIHH

Μ 第6頁 533112 五、發明說明(4) 加熱至上罩,而進行維修工程。而該入氣管丨,前已述及 者,係往上繞行於加熱室上罩之内壁,俾於繞行期間,嗲 ί動:t氣::之淨化用氣體受到加熱室内本身熱源而二 二=ί上,當其繞行至最高處時,流動於該入氣 ^之净化用氣體之溫度業已接近加熱室之溫度,亦即、、备 化用氣體與加熱板之溫度差距,不致於淨化 _ 料產生驟冷效應。 ·、、、敬号對材 喷氣& 2如圖二所示,係為與各層加熱板對應設置, 連結於前述之入氣管i末端,且對應於加熱板各層 間具至少一喷嘴21。為加強噴力’故該喷嘴21得為内徑漸 縮之錐狀,如本案實施例所示者,係為每一 =q 嘴21,唯不以此為限。 -----^ ::參閱圖本案於實施時,當預熱後之玻璃基板 八Τ出而須淨化加熱室或加熱板時,則開始輸入例如 氣,^壓縮乾空氣(CDA)等之淨化氣體;輸入之氣體經由 ί :二1夂之/旋:至加熱室上方後’再經由喷氣管2輸出, 並喷向各層加熱板,以淨化加熱板及加熱室,而後,淨化 使^後之氣體自另端排出ac排出;由於輸入氣體於喷向 力二熱板前,業已為加熱室之本身熱源預熱,因此,於被喷 板時之溫度所差無•,不致使加熱板之材料 產生變形。 1 所Μ,經由本案之實施,其可有效地於玻璃基板取出 f,即可進行淨化,线習知之停機後降溫之等待時間, 並使加熱室之本身熱源可為再利用,誠屬淨化作業之一大M Page 6 533112 V. Description of the invention (4) Heating to the upper cover for maintenance works. The gas inlet pipe, previously mentioned, is looped upward on the inner wall of the upper cover of the heating chamber. During the detour, the gas used for purification: t gas :: is purified by the heating source in the heating chamber itself. Two = ί, when it detours to the highest point, the temperature of the purification gas flowing in the inlet gas ^ is already close to the temperature of the heating chamber, that is, the temperature difference between the preparation gas and the heating plate will not cause Purification material produces a quenching effect. · ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,. In order to enhance the spraying force ', the nozzle 21 may have a tapered inner diameter. As shown in the embodiment of the present case, each nozzle is q nozzle 21, but not limited to this. ----- ^ :: Refer to the picture. When this case is implemented, when the preheated glass substrate is 8T and the heating chamber or heating plate needs to be cleaned, the input of gas, such as compressed dry air (CDA), etc. is started. Purify the gas; the input gas passes through ί: 2 1 夂 / spin: after it is over the heating chamber, and then is output through the air jet tube 2 and sprayed to each layer of heating plate to purify the heating plate and the heating chamber. The gas is discharged from the other end ac. Because the input gas has been preheated for the heating source of the heating chamber before it is sprayed to the force two hot plate, the temperature when the plate is sprayed is almost the same, which will not cause the material of the heating plate. Deformed. 1M, through the implementation of this case, it can effectively take out f from the glass substrate, which can be purified, the waiting time for cooling down after the line is known, and the heating source itself can be reused, which is a purification operation One big

1H 5331121H 533112

突破,而當須要4 M 用N2或其他淨化翁二:、室做維修調整時,此裝置也可利 室快速降溫,而不UhMf〇rce convection)使加熱 本案所揭示者縮短降溫時間。 更或修飾而源於本宰=”例:-種,舉凡局部之變 p . ^ , y I茶之技術思想而為熟習該項技藝之人所 易於=知者’倶不脫本案之專利權範嘴。 、..不上所陳,本案顯示其迥異於習知之技術特徵,且豆 首先創作合於實用,亦符合發明之專利要件,懇請 ^ 查委員明察’並祈早日賜予專利,俾嘉惠社會,實感德 便0Breakthrough, and when 4 M is required to use N2 or other purification Weng II :, room maintenance and adjustment, this device can also help the room to quickly cool down, without UhMfOrce convection) to make the heating disclosed by the case shorten the cooling time. Or modified and originated from Benjai = "Example:-species, for example, local changes p. ^, Y I technical ideas of tea is easy for those who are familiar with the technology = knower's do not leave the patent right in this case Fan Zui .... Not surprisingly, this case shows that it is quite different from the known technical characteristics, and the bean was first created to be practical and also meet the patent requirements of the invention. I urge members ^ to check clearly and pray for the patent to be granted soon. Benefit society, real sense morality 0

第8頁 533112Page 8 533112

Claims (1)

533112 六、申請專利範圍 1. 一種加熱室淨化系統,其係於加熱室内設置入氣 管,該入氣管係沿著加熱室内壁設置,以利用加熱室之熱 度將流動於入氣管内之淨化用氣體加溫,並連結喷氣管, 該喷氣管係對應於各層加熱板設置,俾使於入氣管内流動 <淨化用氣體於行進間被加熱室之本身熱源加熱,而使自 喷氣管喷出之淨化氣體不致使被淨化之加熱板因溫差而變 形者。 2. 如申請專利範圍第1項所述之加熱室淨化系統,其 中之入氣管前端具一入氣管接頭,以便加熱室上罩與加熱 室分離者。 3. 如申請專利範圍第1項所述之加熱室淨化系統,其 中之喷氣管為具喷嘴者。 4. 如申請專利範圍第1項所述之加熱室淨化系統,其 中之對應於各層加熱板之噴氣管得為一組多只設置者。 5. 如申請專利範圍第1項所述之加熱室淨化系統,所 述之淨化氣體係為氮氣,或壓縮乾空氣(CDA)。 6. 如申請專利範圍第3項所述之加熱室淨化系統,所 述之喷嘴其孔徑漸縮,而為錐形者。533112 VI. Application patent scope 1. A heating chamber purification system, which is provided with an air inlet pipe in the heating room, and the air inlet pipe is arranged along the inner wall of the heating room to utilize the heat of the heating chamber to purify the gas flowing in the air inlet pipe It is heated and connected with a gas jet tube. The gas jet tube is provided corresponding to each layer of heating plates, so that the gas flowing in the gas inlet pipe is heated by the heat source of the heating chamber during the traveling, and the gas emitted from the gas jet pipe is discharged. Purified gas will not cause the heated plate to be deformed due to temperature difference. 2. The heating chamber purification system described in item 1 of the scope of the patent application, wherein the front end of the air inlet pipe is provided with an air inlet joint so that the upper cover of the heating room is separated from the heating room. 3. The heating chamber purification system as described in item 1 of the scope of the patent application, in which the jet tube is a nozzle. 4. The heating chamber purification system as described in item 1 of the scope of the patent application, in which the jet tubes corresponding to the heating plates of each layer must be a set of multiple. 5. The heating chamber purification system described in item 1 of the scope of the patent application, the purification gas system is nitrogen, or compressed dry air (CDA). 6. The heating chamber purification system described in item 3 of the scope of patent application, the nozzle has a tapered hole diameter and a tapered shape. 第10頁Page 10
TW91105973A 2002-03-27 2002-03-27 System for cleaning heating chamber TW533112B (en)

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