TW529144B - Structure of metal pad and bonding pad region - Google Patents

Abstract

A structure of a metal pad and bonding pad region is installed on a semiconductor substrate having circuits and comprises: a first pattern dielectric layer formed on the semiconductor substrate; at least a first metal pad unit installed in the first pattern dielectric layer in contact with the surface of the substrate for electrically connecting the circuits, and the side thereof having a plurality of first protrusions and a plurality of first recesses; at least a second metal pad unit installed in the first pattern dielectric layer in contact with the surface of the substrate for electrically connecting the circuits, the second metal pad unit being adjacent to the first metal pad unit and the side thereof having a plurality of second protrusions and a plurality of second recesses, in which the plurality of second protrusions correspond to the plurality of first recesses, and the plurality of second recesses correspond to the plurality of first protrusions; a second pattern dielectric layer formed on the first dielectric layer; at least two top metal pad units installed in the second pattern dielectric layer and separately corresponding to the first metal pad unit and the second metal pad unit; a plurality of first plugs installed below the top metal pad unit in the second pattern dielectric layer for enabling the top metal pad unit and the first metal pad unit, the top metal pad unit and the second metal pad unit, to separately form an electric connection; and a protective layer installed on the periphery of the plurality of top metal pad units, the protective layer having a plurality of openings for exposing the plurality of top metal pad units as a bonding part.

Description

529144 V. Description of the invention (1) Field of the invention The present invention relates to the structure of a semiconductor integrated circuit (semiconductor int Aegrated drcuUs; ICs), and in particular, to a structure that can prevent bonding pads. Peeling and pad structure that hinders crack propagation. Relevant technical description: 乂 § After the body circuit is manufactured, the top metal layer formed on the surface is defined as a plurality of bonding pads (bonding pads), and are electrically connected to the bottom metal pads. Then, a wire is connected between the bonding pad and the guide leg corresponding to the guide frame through a wire bonder. In other words, the bonding pad serves as an interface between the internal circuit and the external signal guide pins, and the external signal is nothing more than a power signal, a ground signal, or an input / output signal, and so on. In order to learn more about the metal pads, the shape is flat, as gold, if it is a low-shape or rectangular semiconductor metal pad. To understand the above problems, the metal pad structure is described below with reference to Figures 1 and 2. First, please refer to FIG. I, which is a sectional view showing a conventional structure. Among them, reference numeral 200 is a semiconductor substrate formed with a plurality of semiconductor elements. Here, for simplicity, only the substrate is illustrated. A first patterned dielectric layer 202 is formed on the substrate 200 with an inter-metal dielectric (IMD) layer, such as a dielectric material layer, and a first metal pad unit 201 with an external shape. A “square shape” is formed in the inter-metal dielectric layer 200 as the conductive wire of the above-mentioned element. Thereafter, a second patterned dielectric layer 204 is formed on the first patterned dielectric layer 202 and the first unit 201, and is located at the first

529144

A metal pad has a via hole 204a formed in the dielectric layer 204 above the 201. The copper hole piug 204b is used in the dielectric hole 204a to electrically connect the A metal pad unit 201. Next, a third patterned dielectric layer 206 and a second metal pad unit 205 are formed on the second patterned dielectric layer 204. The shape of the metal pad unit 200 is also square or rectangular, and is used to electrically connect with the semiconductor element on the substrate 200 through the plug 204b and the first metal pad unit 201 and to connect external circuits. Bonding pad. Finally, a passivation protection layer 208 is formed above the periphery of the second metal pad unit 205 to protect the pad 205 from being damaged in the subsequent package process. The protective layer 208 has an opening 208a, and the surface of the metal layer 205 is exposed as a part of the metal wire bonding of the subsequent wire-bonding machine.

However, please refer to FIG. 2, which illustrates a top view of the first patterned dielectric layer 202 and the first metal pad unit 201 according to FIG. 1. As described above, the first patterned dielectric layer 202 has weak mechanical strength and poor bondability, so under the action of chemical mechanical polishing (chem; [cai mechanical pollination; CMP)] stress, Stress concentration easily occurs at the corners of the first metal pad unit 201 and cracks occur in the dielectric layer 202, which seriously affects the electrical characteristics of the device and the quality of the product. Furthermore, after the dual effects of mechanical stress and ultrasonic oscillation applied by the wire bonder, cracking and peeling of the first dielectric layer 202 may occur, as shown in FIG. 2. More severely, the entire top metal layer 205 and the metal layer 201 will be lifted up by the wire of the wire bonder and peeled away from the dielectric layer (not shown) to form a crater, causing the semiconductor device to fail.

529144 V. Description of the invention (3) In view of this, in order to solve the above problems, a structural adhesion between the metal pad and the bonding pad area is provided, so as to prevent the metal pad from peeling off and to prevent the cracks in the bonding pad area from extending. The purpose is not only to ensure that the occurrence of pits in the metal pads occurs, but also to summarize the invention: One of the objects of the present invention is to provide a structure of a metal pad, which is disposed on a semiconductor recessed part with adhesiveness. On the substrate, the use of a plurality of protrusions and a plurality of protrusions on a metal pad makes adjacent metal pads mutually restrained, which can be achieved by adding a metal pad, including: a drawing with less one metal pad, a plurality of protrusions, and the above picture pad unit; The present invention is arranged in a regular shape to form a plurality of protruding portions extending to a first first metal. The present invention proposes a structure of a metal pad, a dielectric layer formed on the above-mentioned semiconductor substrate; and a unit disposed on The pattern dielectric layer has a plurality of recessed portions on its side. The dielectric layer is made of a low-dielectric material and is made of the above-mentioned copper metal. The protrusion is a polygon, for example, one of a rectangular shape and a triangular shape. Another object is to provide a structure of a bonding pad region, on a semiconductor substrate provided with a circuit, and a metal pattern unit corresponding to each other and fitted, a patterned dielectric layer capable of blocking cracks in the bonding pad region, formed on the above. On a semiconductor substrate; at least a pad unit is disposed in the first patterned dielectric layer, and

0503-7580TWF (N); TSMC2001-1251; Felicia.ptd Page 7 529144 V. Description of the invention (4) The substrate surface is in contact with a plurality of first protrusions and restorations, which are arranged on the first contact for electricity The first metal pad is connected to the adjacent part of the upper unit with the second recess, and the first protruding part of the first recess and the second metal are exposed to the above-mentioned gold joint as the dielectric layer, the shape element, and are disposed on the pad unit. On the second so that the top metal pad forms the above-mentioned first and third triangular portions; and the first gold of a pad unit is electrically connected to the first plurality of recessed portions; the circuit is in the pattern dielectric layer, The first and the second side has the plurality of second protruding plural second protective protection layers, which are disposed above the periphery, the metal pad unit and the second circuit, at least one of which is opposite to the first metal and the plurality of second metal portions. Layer metal 塾 and its second gold base surface 塾 unit 2 protruded corresponding to the previous metal should have an early stage, the surface has a metal pad single-sided connection with the above part and the above The plurality of pad unit openings are described as described above. The above-mentioned pattern is formed on the first dielectric layer of the structure in which the metal pad of the second metal pattern dielectric portion of the above pattern and the protruding portion is bonded to the pad region; The top portion, the irregular portion, and the first recessed portion are made of a low-dielectric material with respect to the protective layer. It is made of alloy, and the cells in the first and second interlayer units mentioned above correspond to the second and second shapes. The insulator is composed of one of the protrusions of the first metal pad unit, and the top part is made of tungsten metal. The pattern includes at least two top metal pads corresponding to the first gold plural first plugs. The plug is arranged below the metal pad unit, and the metal pad unit and the top are respectively configured to be electrically connected. It is a polygon, such as a moment, and the second patterned dielectric layer system and the second recessed metal pad unit are respectively made of copper and aluminum.

0503-7580TWF (N); TSMC2001-1251; Felicia.ptd Page 8 529144 V. Description of the invention (5) In order to achieve the above-mentioned objects, features and advantages of the present invention, a preferred embodiment is exemplified below, and is accompanied by the accompanying The drawings are more relevant and easy to understand: For detailed description of Putian ~ Shiling Guan Example: The first embodiment will use Figure 3, Figure 4, and Figure 5 to explain the root cause ^ The structure of the metal pad is arranged on a top view of the structure of the body-based metal pad formed on the bottom of the sun and the moon. Among them, the reference number 104 is ^%. First of all, please refer to FIG. 3 first, which shows that according to this acoustic pad unit, the periphery has a plurality of first protrusions 104a, and the first one. 0 4b. The reference number I 0 6 is a plurality of second metal pad units, a plurality of second protruding portions I 06a and a second recessed portion I 〇6b, and a peripheral metal L thereof, with the above-mentioned proven unit I 04 and the plurality of second metal pad units I 06. In a staggered arrangement, the second protrusion I 0 6a corresponding to the first metal number corresponds to the first plurality of depressions, and the above-mentioned plurality of the second plurality of depressions I 06b corresponds to the above-mentioned plurality ^, and I 〇4a. The reference number I 08 indicates a passive protective layer, the material of which is silicon (S is N4) or silicon oxide (S i 〇2), in order to protect the first 1 as described above, such as nitriding ~ middle one metal retention-1 04 and the second metal pad unit 丨 06 in the subsequent package (pack f% damage early. &Amp; ^ I in the column is not connected with the frightening job is not very bad according to Figure 3 AA, the cross-sectional view of the bonding pad area. The figure shows Yifeng Moban-Ding λ Green Dry, etc. ® Substrate 100, the surface of the main substrate may have any required semiconductor components on it: half

529144 V. Description of the invention (6) For crystals, diodes, and any conventional semiconductor components, here is: for the sake of illustration, it is not shown in the figure. In addition, a first pattern is dielectric on the semiconductor substrate 100. The first-patterned dielectric layer is, for example, silicon oxide (SiO2), phosphosilicate glass (PSG), borophosphosilicate glass (BPSG), or other low dielectric constant materials, such as fluorosilicone glass (FSG). ). The plurality of first metal pad units 104 and the plurality of second metal pad units 106 are staggered and embedded in the first pattern dielectric layer ι02, respectively, and are in contact with the base surface 100: The circuit (not shown) is electrically connected. Finally, a protective layer 108 is disposed above the periphery of the first metal pad unit 104 and the first metal pad unit, and the protective layer W8 has an opening i08a for exposing the first metal pad unit 1 〇4 and the surface of the first metal pad unit 106, so as to facilitate electrical connection with external circuits through a wire bonding process. The present invention is characterized in that the first protruding portion 104a of the first metal pad unit 104 corresponds to the second recessed portion 106b of the second metal pad unit 106, and the first The recessed portion 104b corresponds to the second protruding portion 106a of the second metal pad unit 106. The shapes of the first protruding portion 104 and the second protruding portion 10 6 a are, for example, rectangular, triangular, arbitrary shapes, etc. The rectangular protruding portion is taken as an example in the third figure of this embodiment. In addition, FIG. 4 is a metal pad structure according to the present invention, and a triangular protrusion is taken as an example. The present invention can be applied to metal pads of other shapes, and is not limited to this. Second embodiment

0503-7580TWF (N): TSMC2001-1251; Felicia.ptd Page 10 529144 V. Description of the invention (7) '---' Next, the structure of the bonding pad area according to the second embodiment of the present invention will be described using FIG. 6 . The metal pad structure as described in the first embodiment is included in the bonding pad structure according to the present invention. Referring to FIG. 6, as described above, a second patterned dielectric layer 112 ′ is further formed on the surface of the first patterned dielectric layer 102 and formed on the first dielectric layer 102. The material of the second patterned dielectric layer 112 is, for example, silicon oxide (SiO2), phosphosilicate glass (pSG), borophosphosilicate glass (BPSG), or other low dielectric constant materials, such as fluorosilicone glass (FSj ). Next, at least two top metal pad units 114 are embedded in the above figure, and the second dielectric layer 112 corresponds to the above first metal pad unit 104 and the first metal pad unit 106, respectively. The material of the top metal pad unit 114 is, for example, metal copper (Cu), metal aluminum (μ), or copper-aluminum (Cu-Al) alloy, and its shape is rectangular. ... ^ In addition, the material is, for example, a plurality of metal tungsten (w) plugs, which are embedded below the top metal pad unit ι4 in the second pattern dielectric layer 102, and are used to separately make the top metal pad unit. The first metal pad unit 104 and the top metal pad unit 114 are electrically connected to the second metal pad unit 106. The protective layer 10 of this embodiment is formed above the periphery of the plurality of top metal pad units 114, and the material is, for example, silicon nitride (S I3 &) or silicon oxide (si 〇2) to protect the first A metal pad unit 104 and a second metal pad unit 106 are subsequently packaged. "" Is not damaged in the process. " In addition, the protective layer 108 has an opening i08a for exposing the surface of the plurality of top metal pad units 14 as a joint portion with a wire of a wire bonding machine in a subsequent wire bonding process.

529144 V. Description of the invention (8) Features and effects of the invention The present invention is characterized in that a metal pad with a plurality of protrusions is used to electrically connect a semiconductor circuit, instead of the square or rectangular metal layer in the conventional technology, and the metal pad is The plurality of protruding portions and the plurality of recessed portions of the adjacent metal pads correspond to each other, so that the adjacent metal pads are restrained from each other. According to the present invention, the protrusions and depressions of adjacent metal pads corresponding to each other can effectively prevent the extension of cracks caused by the external stress in the bonding pad area. In addition, the adhesiveness of the metal pads can be increased to avoid the problems of peeling and pitting of the metal pads caused by the mechanical stress and ultrasonic oscillations applied by the wire bonder during wire bonding. Although the present invention is disclosed as above with a preferred embodiment, it is not intended to limit the scope of the present invention. Any person skilled in the art can make some modifications and decorations without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application.

0503-7580TWF (N); TSMC2001-1251; Felicia.ptd Page 12 529144 Brief description of drawings Figure 1 is a cross-sectional view of a conventional metal pad structure. Fig. 2 is a plan view of a conventional metal pad structure. Fig. 3 is a plan view of the structure of a metal pad according to an embodiment of the present invention. Fig. 4 is a plan view of the structure of a metal pad according to an embodiment of the present invention. Fig. 5 is a sectional view of the bonding pad area according to the AA 'line in Fig. 3. Fig. 6 is a sectional view of a bonding pad region according to an embodiment of the present invention. Explanation of symbols: 100 to semiconductor substrate; 104 to first metal pad unit; 104a to first protruding portion; 104b to first recessed portion; I 0 8 to protective layer; II 0 to plug; 102 to first pattern dielectric Layer; 106 ~ second metal pad unit; 106a ~ second protruding part; 1 0 6b ~ second recessed part; I 0 8a ~ protective layer opening; II 4 ~ plural top metal pad unit

0503-7580TWF (N); TSMC2001-1251; Felicia.ptd page 13

Claims (1)

529144 VI. Application Patent Scope 1. A metal pad structure suitable for a semiconductor substrate, including: a patterned dielectric layer formed on the semiconductor substrate; and at least one metal pad unit disposed on the patterned dielectric layer Inside, the side surface has a plurality of protruding portions and a plurality of recessed portions. 2. The structure of the metal pad as described in item 1 of the scope of the patent application, wherein the patterned dielectric layer is made of a low dielectric material. 3. The structure of the metal pad as described in item 1 of the scope of patent application, wherein the metal pad unit is made of copper metal. 4. The structure of the metal pad as described in item 1 of the scope of patent application, wherein the protrusions are polygonal. 5. The structure of the metal pad as described in item 4 of the scope of the patent application, wherein the protruding portion is one of a rectangular shape, a triangular shape, and an irregular shape. 6. The structure of the metal pad as described in item 1 of the scope of the patent application, which further includes a protective layer provided above the periphery of the metal pad unit, the protective layer having an opening to expose the metal pad unit to As the spliced part. 7. A structure of a bonding pad region, disposed on a semiconductor substrate having a circuit, including: a first patterned dielectric layer formed on the semiconductor substrate; at least one first metal pad unit disposed on the first The patterned dielectric layer is used to electrically connect the circuit, and the side surface has a plurality of first protruding portions and a plurality of first recessed portions; 0503-7580TWF (N); TSMC2001-1251; Felicia.ptd Page 14 529144 Six. Patent application scope At least one second metal pad unit is disposed in the first patterned dielectric layer and is in contact with the surface of the substrate for The circuit is electrically connected. The second metal pad unit is adjacent to the first metal cymbal unit and has a plurality of second protruding portions and a plurality of second recessed portions on the side surface, wherein the plurality of second protruding portions correspond to the plurality of plurality. A first recessed portion, and the plurality of second recessed portions correspond to the plurality of first protruding portions; and a protective layer is disposed above the periphery of the first metal grate unit and the second metal pad unit, and the protective layer has a The metal first metal pad unit and the second metal pad unit are exposed through the opening as a joint part. 8. The structure of the bonding pad area as described in item 7 of the scope of the patent application, wherein the first patterned dielectric layer is made of a low dielectric material. 9. The structure of the bonding pad area according to item 7 of the scope of the patent application, wherein the first metal rhenium unit is made of copper metal. 10. The structure of the bonding pad area according to item 7 of the scope of the patent application, wherein the first protruding portion is polygonal. 1 1. The structure of the bonding pad area according to item 10 of the scope of the patent application, wherein the first protruding portion is one of a rectangular shape, a triangular shape, and an irregular shape. 1 2. The structure of the bonding pad area according to item 7 of the scope of the patent application, wherein the second metal pad unit is made of copper metal. 1 3. The structure of the bonding pad area according to item 7 of the scope of the patent application, wherein the second protruding portion is polygonal. 1 4. The structure of the bonding pad area according to item 13 of the scope of the patent application, wherein the second protruding portion is a rectangular, triangular, or irregularly shaped other 0503-7580TWF (N); TSMC2001-1251; Felicia.ptd Page 15 529144 6. One of the scope of patent application. 1 5 · The structure of the bonding pad area as described in item 7 of the scope of the patent application, wherein the protective layer is made of an insulator. 1 6 · A structure of a bonding pad region provided on a semiconductor substrate having a circuit, including: a first patterned dielectric layer formed on the semiconductor substrate; at least one first metal pad unit disposed on the first A patterned dielectric layer is in contact with the surface of the substrate for electrically connecting the circuit, and has a plurality of first protruding portions and first recessed portions on the side surface; At least one second metal pad unit is disposed in the first patterned dielectric layer and is in contact with the surface of the substrate for electrically connecting the circuit; the second metal pad unit is adjacent to the first metal pad unit, and The side surface has a plurality of second protruding portions and a plurality of second recessed portions, wherein the plurality of second protruding portions correspond to the plurality of first recessed portions, and the plurality of second recessed portions correspond to the plurality of first protruding portions; A patterned second dielectric layer is formed on the first dielectric layer; at least two top metal pad units are disposed in the second patterned dielectric layer and correspond to the first metal pad unit and the second metal pad unit, respectively. Above The plurality of first plugs are disposed below the top metal pad unit in the second patterned dielectric layer, so that the top metal pad unit and the first metal pad unit, the top metal pad unit, and the second metal The pad units constitute electrical connections respectively; and a protective layer is provided on the periphery of the plurality of top metal pad units. 0503-7580TWF (N): TSMC2001-1251; Felicia.ptd Page 16 529144 6. Application scope Patent, the protective layer has a plurality of openings to expose the plurality of top metal pad units as a joint part. 1 7. The structure of the bonding pad area according to item 16 of the scope of the patent application, wherein the first patterned dielectric layer is made of a low dielectric material. 1 K The structure of the bonding pad area according to item 16 of the scope of patent application, wherein the first metal rhenium unit is made of copper metal. 19. The structure of the bonding pad area according to item 16 of the scope of the patent application, wherein the first protruding portion is polygonal. 20. The structure of the bonding pad area according to item 19 of the scope of the patent application, wherein the first protruding portion is one of a rectangular shape, a triangular shape, and an irregular shape. 2 1. The structure of the bonding pad area according to item 16 of the scope of patent application, wherein the second metal pad unit is made of copper metal. 2 2. The structure of the bonding pad area according to item 16 of the scope of patent application, wherein the second protruding portion is polygonal. 2 3. The structure of the bonding pad area according to item 22 of the scope of patent application, wherein the second protruding portion is one of a rectangular shape, a triangular shape, and an irregular shape. 2 4. The structure of the bonding pad area according to item 16 of the scope of patent application, wherein the protective layer is made of an insulator. 2 5. The structure of the bonding pad area according to item 16 of the scope of the patent application, wherein the second patterned dielectric layer is made of a low dielectric material. 2 6. The structure of the bonding pad area according to item 16 of the scope of the patent application, wherein the top metal pad unit is made of copper aluminum alloy. 0503-7580TWF (N); TSMC200M251; Felicia.ptd p. 17 529144 0503-7580TWF (N); TSMC2001-1251; Felicia.ptd page 18