526544 五、發明說明（1)526544 V. Description of the invention (1)
，且特別是 法。如此， 有 可 本發明係有關於一種化學氣相沈積的方法 關於一種兩階段溫度進行化學氣相沈積之方 以提升沈積層厚度之均勻性。 化學氣相沈積（Chemical Vapor Deposition)乃曰 用化學反應的方式，在反應器内，將反應物（通常為^利 )生成固態的生成物，並沈積在晶片表面的一種薄膜、氣體 技術。經過數十年的發展，化學氣相沈積已儼然成為=積 體製程中，最重要且主要的薄膜沈積工具，舉凡所有半$ 體元件所需要的薄膜，不論是導體、半導體或是介導 X ,., 电材料 (dielectrics)，都可以藉化學氣相沈積法來進行配 然而，習知的化學氣相沈積法由於反應氣體係由反鹿 器壁往反應器中心擴散，因此造成一外圍高濃度、中心^ 濃度之濃度梯度，而反應氣體濃度愈高則沈積速率愈快， 導致最終沈積層中心薄且外圍厚之厚度不均問題。請參考 第1圖，其顯示習知氣相沈積法製造沈積層之剖面示意圖 。提供一半導體基底10，形成沈積層11於上述基底1〇表 面’ 一沈積層中心1 3其厚度較一沈積層邊緣丨2為薄。 再请參考弟1表’其係為習知低壓氣相沈積法（L p c v d ) 製造氮化石夕（si 1 icon nitride)。環境氣氛例如為氣壓為 3〇Pa 之氨氣（ammonia)與二氯矽烷（dichl〇r〇si Une)混合 氣體’執行9 8分鐘沈積反應，反應室中一次可承載丨5 〇片 曰曰圓，完成製程後，再抽樣七片，量測每片晶圓上平均分 佈的特定九個點之厚度，並 得知其標準差最小值為1 5. 4 且計算其標準差。由第1表中 ’隶大值為2 5 · 4 1，得知氮化, And especially law. In this way, the present invention relates to a method of chemical vapor deposition and a method of performing chemical vapor deposition at a two-stage temperature to improve the uniformity of the thickness of the deposited layer. Chemical vapor deposition (Chemical Vapor Deposition) is a thin film, gas technology that uses a chemical reaction method to form reactants (usually lysates) into solid products and deposit them on the wafer surface. After decades of development, chemical vapor deposition has suddenly become the most important and main thin film deposition tool in the integration process. For example, all the thin films required for all semi-solid components, whether they are conductors, semiconductors, or mediated X ,., Electric materials (dielectrics) can be prepared by chemical vapor deposition. However, the conventional chemical vapor deposition method because the reaction gas system diffuses from the anti-deer wall to the reactor center, resulting in a high peripheral The concentration gradient of the concentration and the center ^ concentration, and the higher the concentration of the reaction gas, the faster the deposition rate, resulting in uneven thickness of the final deposited layer with a thin center and a thick periphery. Please refer to FIG. 1, which shows a schematic cross-sectional view of a deposition layer produced by a conventional vapor deposition method. A semiconductor substrate 10 is provided, and a deposition layer 11 is formed on the surface 10 of the substrate ′. A deposition layer center 13 is thinner than a deposition layer edge 2. Please refer to Table 1 again. It is a conventional low pressure vapor deposition (L p c v d) method for manufacturing nitride nitride (si 1 icon nitride). The ambient atmosphere is, for example, a mixed gas of ammonia and dichlorosilane (Dichlorosi Une) at a pressure of 30 Pa to perform a 98-minute deposition reaction, and the reaction chamber can carry a single wafer at a time. After the process is completed, another seven samples are taken to measure the thickness of a specific nine points evenly distributed on each wafer, and it is known that the minimum standard deviation is 15.4 and the standard deviation is calculated. From the table 1 ′, the maximum value is 2 5 · 4 1
0503-7090TWf ; TSMC2001-〇953 ； Felicia.ptd 526544 五、發明說明（2) 矽厚度之均勻性不佳。 苐1表 厚度(A) 1614 1616 1619 1621 1626 1641 1594 標準差 20.38 18.45 15.4 15.63 15.6 16.06 25.41 有鑑於此，為了解決上述問題，本發明主要目的在於 提供一種化學氣相沈積之方法，以提升沈積層厚度的均勻 性。 為獲致上述之目的，本發明提出一種兩階段溫度進行 化學氣相沈積之方法，此方法的步驟主要係包括： 首先’提供一基底’上述基底可為半導體$夕基底；接 著，以化學氣相沈積法形成一沈積層於上述基底表面，其 中該化學氣相沈積以兩階段進行，第一階段係為一第一溫 度恆溫，第二階段係為連續降溫至一第二溫度，上述第二 溫度低於上述第一溫度。 當執行第二階段降溫時，靠近加熱源的晶圓外圍會首 先降溫，因此晶圓内部的熱能，由中心向外圍流失，形成 一中心高溫、外圍低溫之溫度梯度，然而反應氣體由於自 反應器壁往中心擴散所造成一外圍高濃度、中心低濃度之 濃度梯度，兩者相互補償，如此一來，可以平衡晶圓中心 與外圍的沈積速率差異，使得沈積層的厚度差異較為減小 ，以提升沈積層厚度之均勻性。0503-7090TWf; TSMC2001-〇953; Felicia.ptd 526544 5. Description of the invention (2) The uniformity of silicon thickness is not good.表 1 Table thickness (A) 1614 1616 1619 1621 1626 1641 1594 Standard deviation 20.38 18.45 15.4 15.63 15.6 16.06 25.41 In view of this, in order to solve the above problems, the main purpose of the present invention is to provide a chemical vapor deposition method to enhance the deposited layer Uniformity of thickness. In order to achieve the above object, the present invention proposes a two-stage temperature chemical vapor deposition method. The steps of the method mainly include: First, a substrate is provided. The substrate may be a semiconductor substrate. The deposition method forms a deposition layer on the surface of the substrate. The chemical vapor deposition is performed in two stages. The first stage is a first temperature constant temperature, and the second stage is a continuous cooling to a second temperature. Below the first temperature. When the second stage of temperature reduction is performed, the periphery of the wafer near the heating source will first be cooled, so the thermal energy inside the wafer is lost from the center to the periphery, forming a temperature gradient of high temperature at the center and low temperature at the periphery. The wall diffusion to the center causes a concentration gradient at the periphery of the high concentration and the center at the low concentration. The two compensate each other. In this way, the difference in the deposition rate between the center and the periphery of the wafer can be balanced, and the difference in thickness of the deposited layer is reduced. Improve the uniformity of the thickness of the deposited layer.
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下 圖示說明： 弟1圖係為習知教相冰籍、、表u ^ 圖 乱相，尤檟法製造沈積層之剖面示意 實施例之低壓氣相沈積法 第2圖係為利用本發明較佳 製造氮化矽之製程剖面圖。 符號說明： 1 〇〜基底； 1 2〜沈積層邊緣； 20〜半導體基底； 2 2〜氮化矽邊緣； 實施例： 11〜沈積層； 1 3〜沈積層中心； 2 1〜氮化矽沈積層； 2 3〜氮化石夕中心。 =月先參考第2圖’其顯不根據本發明採用兩階段溫度 進行化學氣相沈積法所製造之沈積層的剖面示意圖。首 先提基底2 0，其基底例如為半導體石夕基底，接著， 以化學氣相沈積法’例如f壓化學氣相沈積（ApcvD)、低 壓化學氣相沈積（LPCVD)、電襞增進式化學氣相沈積— (PECVD)之其中一種方法形成一氮化物以於上述基底表 面，其氮化物例如為氮化矽（silicon nitride)，並且環 境氣氛例如為氣壓為30Pa之氨氣（amm〇nia)與二氣石夕烷 (dichlorosilane)混合氣體。 其中上述化學氣相沈積分兩階段進行。首先，於第一The following figure illustrates: Figure 1 is a diagram of the traditional teachings, ice, and ill-ordered phases, and the low-pressure vapor deposition method of the embodiment of the cross-section of the deposited layer is shown in the low pressure vapor deposition method. The second figure is the use of the present invention A cross-sectional view of a preferred silicon nitride manufacturing process. Explanation of symbols: 1 0 ~ substrate; 1 2 ~ deposited layer edge; 20 ~ semiconductor substrate; 2 2 ~ silicon nitride edge; Example: 11 ~ deposited layer; 1 3 ~ deposited layer center; 2 1 ~ silicon nitride Laminated; 2 3 ~ Nitride stone center. = Monthly reference to Fig. 2 'shows a schematic cross-sectional view of a deposited layer produced by a two-stage temperature chemical vapor deposition method according to the present invention. First, a substrate 20 is raised, and the substrate is, for example, a semiconductor stone substrate. Then, a chemical vapor deposition method such as f-pressed chemical vapor deposition (ApcvD), low-pressure chemical vapor deposition (LPCVD), and electro-enhanced chemical gas are used. Phase Deposition— (PECVD) One method is to form a nitride on the surface of the substrate. The nitride is, for example, silicon nitride, and the ambient atmosphere is, for example, ammonia (30 Pa) and atmospheric pressure. Dichlorosilane mixed gas. The above-mentioned chemical vapor deposition is performed in two stages. First, first
以()544 五、發明說明（4) ---- 階段日, 鐘=:以第一溫度恆溫780 °C之環境條件，執行約62分 件，:^相沈積，接著第二階段係為連續降溫之環境條 p久、母刀知2 C之降溫速率，將溫度由上述第一溫度7 8 〇 v^丨令至一、墙一 弟二溫度7 2 0它，執行約3 0分鐘化學氣相沈積。 2圖所據本發明，沈積層的厚度均勻度可以被提升，如第 差 7^，一氮化矽層中心23與一氮化矽層邊緣22之厚度 左異較為減小。 片日阿 ——〜工 , Μ 々、私丄L) U 散；二特ϊ ΐ製程後，再取樣七#，量測每片晶圓上平均 中得：個點之厚度’並且計算其標準差。由第2表 較第i表、Λ/Λ小值為12.87，最大值為23.83，其值皆 的結果為小。白知衣程而反應氣體與時間條件相同下所得 製浩^ f考第2表，其顯示依據本發明之低壓氣相沈積法 片曰^匕=層所得之厚度結果。反應室中一次可承載150 日日圓’完成翦兹接，里兩接丄^ u .曰、^ ^ _ 苐2表 厚度(A) 1621 1609 1610 標羊差 14.13 ------- 14.15 — 12.87 1618 1646 1675 1624 13.46 14.73 ...... 17.63 -----—. 23.83 一 井、六=:上！^本發明可以利用兩階段溫度製程來達到提 升沈積層之厚度均勻度的效果。 < 7木運則挺 本發明雖以較佳會施々，丨4旦+ 本發明的範圍，任何孰習此土 ’然其並非用以限定 7无、白此項技藝者，在不脫離本發明之 $ 7頁 0503-7090TWf ； TSMC2001-0953 ； Felicia.ptd 526544Take () 544 V. Description of the invention (4) ---- Phase Day, Clock =: Use the first temperature and constant temperature of 780 ° C to perform about 62 parts, ^ phase deposition, and then the second phase is Continuously cooling the environment bar for a long time, the mother knife knows the cooling rate of 2 C, and the temperature is adjusted from the above first temperature 7 8 OV ^ to the first and second temperature 7 2 0, and it performs about 30 minutes of chemistry Vapor deposition. According to the invention shown in FIG. 2, the thickness uniformity of the deposited layer can be improved, such as the difference 7 ^, and the thickness difference between the center of a silicon nitride layer 23 and the edge 22 of a silicon nitride layer is reduced. After the second day of production, sample # 7, measure the average thickness of each point on each wafer, and calculate its standard. difference. From Table 2 compared to Table i, the small value of Λ / Λ is 12.87 and the maximum value is 23.83, and the results of all values are small. Bai Zhiyi obtained under the same conditions as the reaction gas and time conditions. Consider the second table, which shows the thickness results obtained by the low-pressure vapor deposition method according to the present invention. The reaction chamber can carry 150 yen at a time. 'Complete connection, two connections inside 丄 u. Said, ^ ^ _ 表 2 table thickness (A) 1621 1609 1610 standard sheep difference 14.13 ------- 14.15 — 12.87 1618 1646 1675 1624 13.46 14.73 ...... 17.63 -------. 23.83 One well, six =: up! ^ The present invention can use a two-stage temperature process to achieve the effect of improving the thickness uniformity of the deposited layer. < 7 wooden luck is very good, although the present invention is better, 丨 4 + the scope of the present invention, any person who learns this earth, but it is not used to limit the 7 non-white skill, do not leave $ 7 pages of this invention 0503-7090TWf; TSMC2001-0953; Felicia.ptd 526544
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