523930 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 1 A7 五、發明說明（1 ; 相關申諳件： 本申請件主張於2000年9月19日建檔的美國臨時申請 件序號60/233,805和2001年6月12日建檔的美國臨時申請 件序號60/297,941之優先權。 ° 明之簡簟說明 本發明廣泛地關於用在平板顯示器的薄膜電晶體，尤 其是在像素驅動電路和周邊驅動電路中用砸化鎘作為動態 半導體的薄膜電晶體。 〜 1發明的背景 平板顯不器由一列列和一行行決定影像解析度的像素 所組成。對比、色度和圖樣是由每個單獨的像素的亮度和 色度來控制。目則平板顯示器的列數和行數從可見於手錶 、收音機和娛樂設備的少數行列數的字母數字顯示器到可 見於兩密度電視機和高解析度圖形顯示器的上千行列數。 例如，典型的VGA顯示器有640乘以三種顏色（紅、 綠和藍）的行數和480列的像素組成總共921,600個像素。 薄膜取樣和固定電路都和每個像素做在一起以接收代表影 像輸入資料的電壓訊號並在資料被掃瞄進入顯示器時儲存 在每一個像素。電壓值傳送給控制像素顯像材料的電流或 電壓的電力FET (場效電晶體）。 在使用液晶單元的平板顯示器的情況中，只需要一個 電晶體和一個儲存電容來取樣和固定電路。第1圖顯示一個 有三行乘三列的的顯示器。這樣有九個像素1 1而每個像素 有一個定義位址。上方左邊的像素是由第1行電線12和第1 91920 IL-------參--------訂--------.線· (請先閱讀背面之注意事項再填寫本頁) A7523930 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the paper size is applicable to the Chinese National Standard (CNS) A4 (210 x 297 mm) 1 A7 V. Description of the invention (1; Relevant application documents: This application claims at 2000 U.S. Provisional Application Serial No. 60 / 233,805, filed on September 19, 2009, and U.S. Provisional Application Serial No. 60 / 297,941, filed on June 12, 2001. ° Brief Description of the Invention The present invention is widely used in Thin-film transistors for flat-panel displays, especially thin-film transistors that use cadmium cadmium as a dynamic semiconductor in pixel drive circuits and peripheral drive circuits. ~ 1 Background of the Invention Flat-panel displays determine the resolution of an image by rows and rows. Pixels. Contrast, chroma, and pattern are controlled by the brightness and chroma of each individual pixel. The number of columns and rows of a flat panel display is from a few letters that are visible in watches, radios, and entertainment equipment. Digital displays to thousands of rows and columns that can be found in two-density televisions and high-resolution graphics displays. For example, a typical VGA display has 640 by three colors (Red, green, and blue) rows and 480 columns of pixels make up a total of 921,600 pixels. Thin film sampling and fixed circuits are made with each pixel to receive a voltage signal representing the input data of the image and the data is scanned into the display It is stored in each pixel at any time. The voltage value is transmitted to a power FET (field effect transistor) that controls the current or voltage of the pixel developing material. In the case of a flat panel display using a liquid crystal cell, only a transistor and a storage capacitor are required. Let's sample and fix the circuit. Figure 1 shows a display with three rows by three columns. This way there are nine pixels 11 and each pixel has a defined address. The upper left pixel is composed of the first row of wires 12 and the first 1 91920 IL ------- Refer to -------- Order --------. Line · (Please read the precautions on the back before filling this page) A7
523930 五、發明說明（2 ) 列電線13來定位。行線運送決定液晶單元14的電壓高声的 電壓。儲存電容1 8儲存該電壓直到重刷電壓更新了電壓並 改變它。列線13傳送電壓到場效電晶體17的閘極。有時這 條線是指列啟動線，因為藉由傳送電壓到一列中所有的閘 極’資料就可以傳送到單獨的液晶單元14，以及在每一列 中的儲存電容16。 液晶顯示器（LCD )實質上不需要電力，因為液晶顯 不器的像素是個電容，而且沒有將電力電晶體接地。系統 中唯一使用的電力是在像素和儲存電容充電的過程。如眾 所皆知的，液晶顯示器是用前後的玻璃基板將液晶材料封 包於兩者之間。 在1970年代後期，顯示器工業決定為了使將用在攜帶 式電腦的顯不器有好的解析度的彩色顯示器（VGa )，會 需要動態矩陣顯示器。參照第2圖，動態矩陣顯示器的每一 個像素包括由含有傳送閘極21、儲存電容22和電力場效電 晶體23的電路所驅動的發光二極體24。每一個電力場效電 晶體23的汲極連接到發光二極體（LED) 24的陽極。發光 一極體24的陰極則接地。在操作時，訊號資料一線一線地 儲存在暫存器26a和26b中。暫存器26a將訊號資料提供到奇 數的行線（1、3、5等），如27a所表示。暫存器26b將訊號 資料提供到偶數的行線（2、4、6等），如27b所表示。哪一 個像素要從暫存器接收訊號是由列選擇器28決定。當訊號 貧料到達矩陣時，第一個暫存器26充滿了第一個顯示畫面 的第一條線。f s整的第二條線已經在倚存器26裡，列選 ---------------------訂--------- ί請先閱讀背面之注意事項再填寫本頁) 經 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 523930 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（3 擇1§便在第27行放一姻印缺 . 個訊就。遠個列訊號開啟在第一列29 的所有傳輸閘極21，而 请仔在皙存盜26的資料被下載並以 電壓的形式儲存在每-個像素的儲存電容22裡。總共 存電容量是金屬導線、輸出場效電晶體23的閉極電容量和 儲存電容22的電容量的總和。儲在 燔存維持的時間是由傳送閘 極21的反向電阻，加上儲存電容 于电今里22、漏電阻乘以總共的 儲存電容量計算所得的RC時間當數涞… ^ ^ 才间吊數决疋。儲存RC常數應 該至少是畫面維持時間三倍的時間。例如，如果訊號資料 由每秒六十（60)個畫面組成’畫面維持的時間是16 7毫 秒，因此RC常數應該是49.5毫秒或更大。因此，畫面速率 加上總共的反向漏電阻決定了總共儲存電容量的大小。 電壓高度+v和放置在場效電晶體輸出的閘極23的維 持時間決定了發光二極體24可覺察的亮度。這表示有兩種 方法來影響亮度（灰階）。第-種是藉由在儲存電容22裡儲 存顯示電壓的電壓高度值。第二種是將顧 々疋將顯不畫面分割成八 個二位元的次畫面使得可以有256種方式來表示儲存電容 22裡不同的電壓訊號的維持時間。這稱為八位元灰階。十 位元灰階將可以有1024個次畫面。 誠如所見，場效電晶體傳送閘極21的轉換品質和輸出 場效電晶體，第1圖的17和第2圖的21，的雪士 力負荷有決定 #的影響。轉換品質是由傳送閘極21的開電阻除以傳送閘 ㈣的關電^決^目前μ生產動態矩陣傳送 閘極和電力電晶體的材料是非結晶的石夕（ 、/ )和多晶 I ( Ρ-矽）。這些用來製作薄膜電路的熱1材料都报雞祐田 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------- AW--------訂---------^_WI (請先閱讀背面之注意事項再填寫本頁} 523930 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（4 形成低效能的開關、有低的電力負荷、並需要對和塑膠基 板相谷而S太咼的生產溫度。積體電路工業早期安排單晶 矽作為標準半導體材料，不過單晶（單一的）矽不能用在 液晶顯示器的動態矩陣，因為顯示畫面必須分佈在比積體 電路所能覆蓋還大的區域上。今日，a_矽被用於膝上型和 筆記型電腦的高解析度彩色顯示器，並且對電腦的桌上型 螢幕市場造成侵略。在高解析度顯示器的情況中，行和列 彼此太接近使得從顯示器製作上千條連接線到電腦的控制 電路十分困難。注意VGA彩色顯示器有！ 92〇條RGB行和48〇 條列而形成總共2400個連接線。為了減少大部分的連接線 ，顯示器的驅動電路必須利用像素電路所用的薄膜半導體 安裝在同一片玻璃基板。藉由將驅動電路和像素電路安裝 在玻璃基板上，到電腦的連接線減少到只有二十幾條線。 不過問題是當像素電路以相當低的速度（在千赫的範圍） 操作時，以百萬赫的範圍，比單晶石夕快一千倍，操作的驅 動電路可以控制該速度。 半導體的速度在材料從無結晶矽進步到單晶矽時增加 了。工業界無法使用單晶碎（X-碎），所以決定將秒以加 熱的退火步驟轉化成多晶矽（P-矽）。一開始工業界將多晶 矽沈積在加熱到攝氏九百度的石英板上以達成該目的。不 過石英對大部分的顯示器應用而言太昂貴，因此開發出可 以局部加熱沈積的a-矽到高溫，卻不會將玻璃基板加熱到 融點的雷射退火方法來從a-矽創造p-矽。這個方法製造出 有足夠速度的p-矽以將驅動電路放在玻璃基板上。不過成 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） Λ 4 91920 --------------------^ , I------- (請先閱讀背面之注意事項再填寫本頁) 523930 經濟部智慧財產局員工消費合作社印製 5 A7 五、發明說明（5 本因為高電力的雷射成本而仍舊很高。p石夕是個和a石夕截 然不同的材料。首先a_矽不需要像χ_矽在積體電路工業裡 那樣需要參雜，不過ρ_矽需要參雜物以製造所要的電性接 觸性質。Ρ·梦不能成為-個很好的開關轉換器十碎因為 雷射退火的掃瞒而很難做得均勻。這些多晶石夕的問題必須 用更複雜的電路來彌補。 液晶顯禾器是種低耗電的顯示器所以可用非3梦來做 動態矩陣’不過若是顯示驅動電路要用薄膜半導體製造在 玻璃上就需要Ρ-碎。對發射式顯示器，也就是用發光二極 體的顯示器’㈣矩陣不只是資料的載具，現在更必須要 傳送製造人們看到的畫面的電力。不能選擇a·矽，所以工 業界轉向有執行能力可驅動放射式顯示器的p梦。 最新的放射式顯示器是場發射顯示器（fed)和有機 發光二極體顯示器（〇LED)有被誤稱為有狼或帆。 有不同形式的有機發光二極體顯示器材料。第一種是柯達 在测年代發明的被稱為小分子有機發光二極體顯示器。 ::聚合物有機發光二極體顯示器之發明，而接著金屬有 機材料之發明。所有的這些顯示器包括FED都f i & & 裔巴祜都需要動態矩 陣以達成它們在解析度和影像品質完全的潛力。 及姑=和二洋制製造出第—個㈣之像素電路以 及之驅動器的動態矩陣有機發光二極體顯示器 準p石夕二Γ A司正在用過去十五年内一些公司開發的標 二:夕電路來開發動態矩陣有機發光二極體顯示器。為了 彌補P·矽的問題，設計了特殊的 ^ ^用Φ龍㈣泡7^1、·.: _________-^^素驅動電路。运樣的電 91920 (請先閱讀背面之注意事項再填寫本頁) --------^--------- 523930 經濟部智慧財產局員工消費合作社印製 A7 ___B7 __ 五、發明說明（6 ) 路在標題為”用於有機EL顯示器的多晶矽驅動電路”，第 4920-25篇，會議4925A，電子影像2001，聖荷西，加州， 的文章中有記載。這篇文章解釋了在p_矽動態矩陣裡不同 門檻電壓所造成的問題。這篇文章也提到其他的變動如越 過矩陣行列的電子遷移變動。因為這些問題，p-矽動態矩 陣不太可能應用在大的（>15英吋）有機發光二極體顯示 器上，因此需要一個替代的解決方案。 發明的概要 本發明是有關改良的效能的薄膜電晶體。尤其是，該 薄膜電晶體用硒化鎘作為半導體動態層。使用改良的電晶 體結構使得在形成平面顯示器時，像素、像素驅動電路和 周邊驅動電路都在同樣的步騍中形成在支持的適合基板。 圖示之簡單說明 本發明以及其優點藉由參考接下來的說明和附屬的圖 示可以較清楚地瞭解，這些圖示是： 第1圖是用來驅動液晶顯示器的動態矩陣中使用的像 素a-矽電路。 第2圖疋用來驅動有機液晶顯不器的動態矩陣中使用 的像素P-碼化鎘電路。 元件符號之說明 (請先閱讀背面之注意事項再填寫本頁) 0 訂---------線_ 第3圖疋第2圖的像素p_石西化鑛電路的剖面視圖。 11 像素 12 行電線 13 列電線 14 液晶單元 16 儲存電容 17 傳送閘極 本紙張尺度適用中國國家標準格⑵〇 x 297 6 91920 523930 經濟部智慧財產局員工消費合作社印製 A7 B7 •、發明說明（7 ) 18 儲存電容 21 傳送閘極 22 儲存電容 23 電力場效電晶體 24 發光二極體 26,26a，26b 暫存器 27a 行線 28 選擇器 29 列 32 透明基板 33 閘極電極 34 氧化矽膜 36 硒化鎘通道區域 37 IT 0電極陽極 38 鉻源極 39 汲極 41 鋁層 42 有機發光二極體材料 43 陰極 較佳實施例的說明 (請先閱讀背面之注意事項再填寫本頁) 0 根據本發明，根據平板顯示器的應用選擇適當的基板 。例如，對於撓性基板要使用Kapton或PES塑膠基板。對 其他形式的顯示器，使用玻璃或絕緣金屬基板。在大部分 的發光二極體（LED )顯示器裡，光線向下放射穿過基板 使得基板必須是透明。所有的顯示器使用被驅動以提供光 線的像素。較舊形式的顯示器使用液晶（LCD )像素，其 中的驅動電路是取樣和固定電路包含一個單薄膜電晶體（ TFT )和一個電容。今日所研發的顯示器使用發光二極體 (LEDs )諸如有機發光二極體（〇leDs )和場發射二極體 (FEDs )。薄膜電晶體矩陣被用於驅動發光二極體。使用 半導體動態材料於薄膜電晶體電路，其中同樣的材料被用 於顯不器驅動和控制電路，使所有的電路可以同時形成在 顯不器基板上是有利的。根據本發明，動態半導體材料是 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297 ~--- 訂---------線 7 91920523930 V. Description of the invention (2) Position the wires 13 in a row. The line-to-line transmission determines the voltage of the liquid crystal cell 14 as a high-pitched voltage. The storage capacitor 18 stores this voltage until the rebrush voltage updates the voltage and changes it. The column line 13 transmits a voltage to the gate of the field effect transistor 17. This line is sometimes referred to as a column start line, because by transmitting a voltage to all the gates' data in a column, it can be transmitted to a separate liquid crystal cell 14 and a storage capacitor 16 in each column. A liquid crystal display (LCD) does not substantially require power because the pixels of the liquid crystal display are capacitors and the power transistor is not grounded. The only electricity used in the system is the process of charging the pixels and storage capacitors. As is well known, liquid crystal displays use a front and rear glass substrate to encapsulate a liquid crystal material between the two. In the late 1970s, the display industry decided that a dynamic matrix display would be needed to provide a good-resolution color display (VGa) for displays that will be used in portable computers. Referring to FIG. 2, each pixel of the dynamic matrix display includes a light emitting diode 24 driven by a circuit including a transfer gate 21, a storage capacitor 22, and a power field effect transistor 23. The drain of each electric field effect transistor 23 is connected to the anode of a light emitting diode (LED) 24. The cathode of the light-emitting monopole 24 is grounded. In operation, the signal data is stored line by line in the registers 26a and 26b. The register 26a supplies the signal data to the odd-numbered lines (1, 3, 5, etc.), as indicated by 27a. The register 26b supplies the signal data to the even-numbered lines (2, 4, 6, etc.), as indicated by 27b. Which pixel should receive signals from the register is determined by the column selector 28. When the signal lean reaches the matrix, the first register 26 is filled with the first line of the first display. The second line of fs is already in the memory 26, and it is listed --------------------- Order --------- ί Please Read the notes on the back before filling out this page) Printed by the Employees' Cooperatives of the Ministry of Economic Affairs and Intellectual Property Bureau 523930 Printed by the Employees ’Cooperatives of the Ministry of Economics and Intellectual Property Bureau A7 Printed on the 27th line of the invention The printout is missing. The remote signal turns on all the transmission gates 21 in the first row 29, and the data in the memory 26 is downloaded and stored in the form of voltage in each pixel storage capacitor. 22. The total storage capacity is the sum of the closed-end capacitance of the metal wire, the output field effect transistor 23, and the capacitance of the storage capacitor 22. The time stored in the storage is the reverse resistance of the transmission gate 21, Add the storage capacitor to the battery 22, the leakage resistance multiplied by the total storage capacitance, and the calculated RC time is 涞 ... ^ ^ The time is determined. The storage RC constant should be at least three times the screen maintenance time. For example, if the signal data is composed of sixty (60) frames per second, the frame maintenance time is 16 7 milliseconds. Therefore, the RC constant should be 49.5 milliseconds or more. Therefore, the frame rate plus the total reverse leakage resistance determines the total storage capacitance. The voltage height + v and the gate 23 placed on the output of the field effect transistor The holding time determines the brightness that the LED 24 can perceive. This means that there are two ways to affect the brightness (gray scale). The first type is to store the voltage height value of the display voltage in the storage capacitor 22. The second type It is Gu Gu that the display screen is divided into eight two-bit sub-pictures so that there can be 256 ways to represent the maintenance time of different voltage signals in the storage capacitor 22. This is called eight-bit grayscale. Ten digits The yuan gray scale will have 1024 sub-pictures. As you can see, the field-effect transistor transfers the switching quality of the gate 21 and the output field-effect transistor. The impact of decision #. The conversion quality is determined by the on-resistance of the transmission gate 21 divided by the power off of the transmission gate. ) And polycrystalline I (P-Si) These thermal 1 materials used to make thin film circuits are reported to Jiyou Tian. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) -------------- AW- ------- Order --------- ^ _ WI (Please read the notes on the back before filling in this page} 523930 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description (4 The formation of low-efficiency switches, low power loads, and the need for a production temperature that is too low for plastic substrates. The integrated circuit industry early arranged monocrystalline silicon as a standard semiconductor material, but monocrystalline (single) silicon It cannot be used in the dynamic matrix of the liquid crystal display, because the display screen must be distributed over a larger area than the integrated circuit can cover. Today, a_silicon is used in high-resolution color displays for laptops and notebook computers, and has invaded the desktop screen market for computers. In the case of a high-resolution display, the rows and columns are too close to each other making it difficult to make thousands of control lines from the display to the computer's control circuit. Note that VGA color monitors are available! 920 RGB rows and 480 columns form a total of 2400 connecting lines. In order to reduce most of the connection lines, the driving circuit of the display must be mounted on the same glass substrate using the thin film semiconductor used in the pixel circuit. By mounting the driver circuit and the pixel circuit on a glass substrate, the number of connection lines to the computer has been reduced to just over 20 lines. However, the problem is that when the pixel circuit operates at a relatively low speed (in the range of kilohertz), in the range of one million hertz, it is a thousand times faster than the monocrystalline stone. The operating driver circuit can control this speed. The speed of semiconductors increases as the material progresses from amorphous silicon to single crystal silicon. The industry is unable to use single-crystal chips (X-chips), so it was decided to convert the annealing step in seconds to polycrystalline silicon (P-silicon). Initially, the industry deposited polycrystalline silicon on quartz plates heated to nine hundred degrees Celsius to achieve this goal. However, quartz is too expensive for most display applications, so a laser annealing method has been developed that can locally heat deposited a-silicon to high temperatures without heating the glass substrate to the melting point to create p-silicon from a-silicon. Silicon. This method produces p-silicon with sufficient speed to place the driver circuit on a glass substrate. However, the cost paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) Λ 4 91920 -------------------- ^, I ---- --- (Please read the notes on the back before filling out this page) 523930 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5 A7 V. Invention Description (5 books are still very high due to the high cost of laser power. P stone Xi is a very different material from a Shi Xi. First of all, a_silicon does not need to be mixed like χ_silicon in the integrated circuit industry, but ρ_silicon needs to be mixed to produce the desired electrical contact properties. P · Dream cannot be a good switching converter. It is difficult to make uniform because of laser annealing. These polycrystalline silicon problems must be compensated with more complicated circuits. LCD monitors are a kind of Low power consumption display can use non 3 dreams to make a dynamic matrix 'but if the display drive circuit is to be made of thin film semiconductors on glass, P-break is needed. For an emission display, that is, a display using a light emitting diode'㈣ The matrix is not just a carrier of data. The power of the screen. A silicon cannot be selected, so the industry has turned to p-dreams that have the ability to drive radiation displays. The latest radiation displays are field emission displays (FEDs) and organic light emitting diode displays (〇LEDs). It is mistakenly called a wolf or sail. There are different forms of organic light emitting diode display materials. The first is a small molecule organic light emitting diode display invented by Kodak in the chronology. :: Polymer organic light emitting diode The invention of polar displays followed by the invention of metal organic materials. All these displays, including FEDs, need dynamic matrices to achieve their full potential in resolution and image quality. Niyo made the first pixel circuit and driver of the dynamic matrix organic light-emitting diode display. The company is using the standard two developed by some companies in the past 15 years: Xi Circuit to develop dynamics. Matrix organic light-emitting diode display. In order to make up for the problem of P · Si, a special ^ 用 Φ ㈣ ㈣ bubble 7 ^ 1, ....: _________- ^^ element driving circuit. Sample electricity 91920 (Please read the precautions on the back before filling out this page) -------- ^ --------- 523930 Printed by A7 ___B7 __ 5 6. Description of the Invention (6) Road is documented in an article entitled "Polycrystalline Silicon Driving Circuits for Organic EL Displays", articles 4920-25, conference 4925A, electronic imaging 2001, San Jose, California, this article. This article Explains the problems caused by different threshold voltages in the p_silicon dynamic matrix. This article also mentions other changes such as electron migration changes across the matrix rows and columns. Because of these problems, p-silicon dynamic matrix is unlikely to be used in large (> 15 inch) organic light emitting diode displays, so an alternative solution is needed. SUMMARY OF THE INVENTION The present invention relates to a thin film transistor having improved performance. In particular, the thin film transistor uses cadmium selenide as a semiconductor dynamic layer. The use of an improved electrical crystal structure allows pixels, pixel drive circuits, and peripheral drive circuits to be formed on a suitable suitable substrate in the same steps when forming a flat display. Brief description of the diagram and the advantages of the invention can be clearly understood by referring to the following description and accompanying diagrams. These diagrams are as follows: Figure 1 is used to drive the pixels a used in the dynamic matrix of the liquid crystal display -Silicon circuit. Figure 2 疋 Pixel P-coded cadmium circuit used in a dynamic matrix to drive an organic liquid crystal display. Explanation of component symbols (Please read the precautions on the back before filling in this page) 0 Order --------- Line _ Figure 3 疋 Figure 2 Pixel p_ Sectional view of the Shixihua mineral circuit. 11 Pixels 12 Rows of wires 13 Columns of wires 14 Liquid crystal cell 16 Storage capacitors 17 Transmission gate This paper size is applicable to the Chinese national standard format 0x 297 6 91920 523930 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 • Description of the invention ( 7) 18 storage capacitor 21 transmission gate 22 storage capacitor 23 power field effect transistor 24 light-emitting diode 26, 26a, 26b register 27a row line 28 selector 29 column 32 transparent substrate 33 gate electrode 34 silicon oxide film 36 Channel area of cadmium selenide 37 IT 0 electrode anode 38 chromium source 39 drain 41 aluminum layer 42 organic light emitting diode material 43 description of the preferred embodiment of the cathode (please read the precautions on the back before filling this page) 0 According to the present invention, an appropriate substrate is selected according to the application of the flat panel display. For example, Kapton or PES plastic substrates are used for flexible substrates. For other types of displays, use glass or insulated metal substrates. In most light emitting diode (LED) displays, light is radiated downward through the substrate so that the substrate must be transparent. All displays use pixels that are driven to provide light. Older displays use liquid crystal (LCD) pixels, where the drive circuit is a sampling and fixed circuit that includes a single thin film transistor (TFT) and a capacitor. Displays developed today use light-emitting diodes (LEDs) such as organic light-emitting diodes (OLEDs) and field-emitting diodes (FEDs). Thin film transistor matrix is used to drive light emitting diodes. It is advantageous to use semiconductor dynamic materials for thin film transistor circuits, where the same materials are used for display driver and control circuits, so that all circuits can be formed on the display substrate at the same time. According to the present invention, the dynamic semiconductor material is the paper size applicable to the Chinese National Standard (CNS) A4 specification (21〇 x 297 ~ --- order --------- line 7 91920