TW523745B - Microelectronic programmable device and methods of forming and programming the same - Google Patents

Abstract

A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.

Description

Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs' Consumer Cooperatives 523745 A7 _ B7 V. Description of the Invention (1) Reference to the related application This application declares the following benefits: US Patent Application Serial No. 09 / 502,9 1 5. Name: Microelectronics Programmable device and method of formation and stylization, filed on April 19, 2000; US patent application serial number 09/5 5 5, 6 1 2, named: Aggregated metallized unit structure within a programmable surface and its formation Method, filed on December 4, 1998; US patent application serial number 60/23 1,343, entitled: Common electrode structure of programmable metallization unit, filed on September 8, 2000; US patent application serial number 60/23 1,345, titled: Glass composition suitable for programmable metallization units and methods of forming it, filed September 8, 2000; US Patent Application Serial No. 60/23 1,350, titled: Extremely Low Energy programmable metallization unit device and method of forming the same, application filed on September 8, 2000; US patent application serial number 60/23 1,427, entitled: Electrode of programmable metallization unit, September 8, 2000 Filed today; US patent application Application No. 60/23 1,346, titled: Programmable Metallized Unit Solid Solvent and Method for Forming It, filed on September 8, 2000; US Patent Application No. 60/23 1,432, titled: Floating electrode programmable metallization unit and method of programming and forming, applied on September 8, 2000; US patent application serial number 60 / 282,045, entitled: Optimized electrode of programmable metallization unit, 2001 Filed on April 6; US Patent Application Serial No. 60/2 83,5 91, titled: Optimized Glass Composition of Programmable Metallization Unit, filed April 13, 2001; US Patent Application Book No. 60/29 1,886, titled 4S & W / 0112TW / AXON, 29089.1120 1 ^ The long scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) > — — — — — — — — — — — — — · 1111111 · 11111111 I. (Please read the notes on the back before filling out this page) 523745 A7 B7 V. Description of the invention ο): Programmable metallization unit electrode, application was made on May 18, 2001. (Please read the notes on the back before filling this page) FIELD OF THE INVENTION The present invention relates to a microelectronic device, and more particularly to a programmable microelectronic structure suitable for integrated circuits. BACKGROUND OF THE INVENTION Commonly used memories in electronic systems and computers store information formed as binary data. These memories can be characterized in a variety of different styles, each of which combines its advantages and disadvantages. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs • For example: Random Access Memory ("RAM"), which is present in personal computers, is typically volatile semiconductor memory; that is, if the power is turned off Or remove, you will lose the stored data. Dynamic random access memory ("DRAM") is volatile memory that must be updated every few microseconds (refreshedM is recharged) to maintain stored data. The static random access memory ("SRAM") retains the data after each write as long as the power is not interrupted; however, once the power is interrupted, the data will be lost. Therefore, in these volatile memory structures, information is retained as long as the system power is not turned off. In short, these random access memory devices occupy an important chip range. Therefore, a considerable amount of energy is manufactured and consumed in the data 4S & W / 0112TW / AX0N, 29089.1120 9 This paper standard applies to the Chinese National Standard (CNS) A4 specification (210 X (297 mm) 523745 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (3) Storage is expensive. Therefore, an improved memory device suitable for a machine such as a personal computer is urgently needed. Other storage devices, such as magnetic storage devices (such as floppy disks, hard disks, and magnetic tapes) and other systems, such as optical disks, CD-RW, and DVD-RW are non-volatile, have a large capacity, and can be more Repeated writes. Unfortunately, these memory devices are bulky, sensitive to shocks and vibrations, require expensive mechanical power devices, and consume considerable amounts of power. These negative factors make this memory device less than ideal for low-power portable applications such as laptops, PDAs, and personal digital assistants ("PDAs"). Due to the rapid growth of many small, low-power portable computer systems where stored information changes regularly, at least to some extent, low-energy read-write semiconductor memory is becoming more and more common. In addition, since these portable systems often need to store data when the power is off, such systems are expected to be able to use non-volatile storage devices. A programmable semiconductor non-volatile memory device called a "programmable read-only memory" ("PROM") device is suitable for this type of system. One type of programmable read-only memory, write-once-read-many ("WORM") devices, uses a row of fusible linkages. Once the program is programmed, the multiple reading device can no longer program. Other types of programmable read-only memory devices, including erasable programmable read-only memory ("EPROM") and electronic erasable programmable read-only memory ("EEPROM,") devices, It can be changed afterwards. 4S & W / 0112TW / AX0N, 29089.1120 can be erased. 3 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) III ϋ — — — — — — — — — — — — — — — I— «— — — — — — — I— I (Please read the notes on the back before filling this page) 523745 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 ________B7_ V. Description of Invention (+) Yes Programmable read-only memory devices usually require an erase step that is exposed to ultraviolet light before programming. Therefore, the device is not universally suitable for use in portable electronic devices. Electronically erasable programmable read-only memory Devices are usually easier to program, but have other disadvantages. In particular, electronically erasable programmable read-only memory devices are more complex, difficult to produce, and relatively large. In addition, electronically erasable The circuit of a programmable read-only memory device must be able to withstand the high voltages required for programming. Therefore, compared to other data storage methods, electronically erasable programmable read-only memory memory capacity has a very high cost per bit. Another disadvantage of electronically erasable programmable read-only memory devices is that, although they can retain data without a power connection, they require a considerable amount of power to program. This power burden is important for small, battery-powered portable devices. The system is quite large. Due to the above-mentioned problems associated with traditional data storage devices, a non-volatile programmable device that is easy to produce and inexpensive is needed. In addition, the memory technology should be compatible with the new generation of portable computer devices It can operate at a relatively low voltage when providing high storage density, and the production cost is low. OBJECTS OF THE INVENTION The present invention provides an improved microelectronic device applied to integrated circuits. More particularly The present invention provides a non-volatile programmable device suitable for use in memory and other integrated circuits. mp; W / 0112TW / AX0N, 29089.1120 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ♦ 'ir ----------, ¾ ϋ a. · — l_i n · Ϋ n ϋ 一 · 1 me— i mmmt ι ϋ I n ii ϋ 1- · · ϋ · ϋ —i ϋ ϋ I n ϋ I n · ϋ ϋ I (Please read the notes on the back before filling this page) 523745 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention (5) The various disadvantages of the known programmable devices pointed out by the present invention will be discussed in detail below. However, the present invention provides a programmable device which is easy to produce and program and is inexpensive. According to an exemplary embodiment of the present invention, the programmable structure includes an ionic conductor and at least two electrodes. When a bias voltage is applied between two electrodes, one or more electrical characteristics of the structure are changed. Specifically, when a bias voltage is applied to the electrodes, the resistance of the structure changes. Furthermore, the capacitance or other electrical characteristics of this structure will change with the application of bias across the electrodes. These changes in electrical characteristics are detected in a timely manner, so the stored information is recovered from the circuit containing the structure. According to another embodiment of the present invention, the programmable structure includes an ion conductor, at least two electrodes, and a barrier between at least a part of an electrode and the ion conductor. According to this embodiment, the barrier material includes a material installed to reduce diffusion of ions between the ion conductor and at least one electrode. This diffusion barrier will also prevent unwanted electrodeposition growth in part of the structure. From another perspective, the barrier material contains an insulating substance. The inclusion of an insulating substance will increase the resistance of the device to minimise the resistance of the electric current J1. According to another aspect of this embodiment, the barrier contains a material that guides ions, but it is relatively resistant to electron conduction. Utilizing this material reduces the undesirable plating on the electrodes and increases the thermal stability of the device. According to another embodiment of the present invention, the programmable microelectronic structure is formed on the surface of the substrate by forming a first electrode on the substrate, placing a layer of ionic conductive material on the first electrode, and 4S & W / 0112TW / AXON, 29089.1120 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) --------------------- Order- -------— AWI (Please read the notes on the back before filling out this page) 523745 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of Invention () A conductive substance is placed on it. From the viewpoint of this embodiment, a solid solvent containing an ionic conductor and an additional conductive substance is formed by dissolving (eg, dissolving via thermal and / or photoelectric dissolution) a portion of the conductive substance on the ionic conductor. According to a further point of view, only a part of the conductive material is decomposed, and the part of the conductive material remains on the surface of the ion conductor, forming an electrode on the surface of the ion conductor material. According to another embodiment of the present invention, at least a part of the programmable structure 疋 is formed in a through-hole or a via in the insulating material. From the viewpoint of this embodiment, the first electrode characteristic is formed on the surface of the substrate, the insulating material is deposited on the electrode characteristic surface, the perforations are formed in the insulating material 'and a part of the programmable structure is formed in the perforations. After the perforation is formed in the insulating material, a part of the structure in the perforation is formed by placing an ion conductive material on the conductive material, and a second electrode material is placed on the ion conductive material. If necessary, remove any excess Electrodes, ionic conductors, and / or insulating materials. According to another aspect of this embodiment, only the ion conductor is formed in the perforation. In this example, the first electrode is formed under the insulating material and is in contact with the ion conductor, and the second electrode is formed over the insulating material and is in contact with the ion conductor. The structure of the perforations will change 'to change (eg, reduce) the contact area between one or more electrodes and the ion conductor. Reducing the cross-sectional area of the interface between the ionic conductor and the electrode will increase the performance of the device (change the electrical characteristics of the device based on the power provided). According to another aspect of this embodiment, the perforation extends through the lower electrode to reduce the interface area between the ion conductor and the electrode. According to another aspect of this embodiment, a part of the ionic conductor will be removed from the perforation, or the ionic conductor material 4S & W / 0112TW / AXON, 29089.1120 6 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Mm) " — — — — — — — — — — — — — I — — — — — — II ^ »1 — — — — — — I-(Please read the notes on the back before filling this page) 523745 A7 B7 V. Description of the invention (q) It will only be deposited in part of the perforations to further reduce the interface between the electrode and the ion conductor. < Please read the notes on the back before filling this page) According to another embodiment of the present invention, the programmable device is formed on the surface of the substrate. According to another embodiment of the present invention, a large amount of information is stored in a single programmable structure. From the viewpoint of this embodiment, the programmable structure includes a floating electrode interposed between two additional electrodes. According to another embodiment of the present invention, a plurality of programmable devices can be combined using a common electrode (such as a common anode or a common cathode). According to another embodiment of the present invention, a plurality of programmable devices share a common electrode. In addition, according to another embodiment of the present invention, the current capacity of the programmable structure is changed by the migration of ions in the ionic conductor of the structure. Brief description of the drawings A more complete understanding of the present invention can be obtained by referring to the detailed description and the scope of patent application. Elements in the diagrams are provided with reference numbers. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 1 discloses a cross-sectional view of the programmable structure formed on the surface of the substrate according to the present invention. FIG. 2 is a cross-sectional view of a programmable structure according to another embodiment of the present invention. Figure 3 reveals a current-voltage curve diagram showing the current and voltage characteristics in the device illustrated in Figure 2 in "on" and "off" state diagrams. 4S & W / 0112TW / AX0N, 29089.1120 7 This paper size applies to Chinese national standard (CNS> A4 specification (210 X 297 mm) 523745 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Illustration of invention (g) 4 still shows a cross-sectional view of a programmable structure according to another embodiment of the present invention. FIG. 5 shows a part of a memory device of an exemplary embodiment of the present invention. FIG. 6 shows a part of a memory device of another embodiment of the present invention. Figures 7 and 8 disclose cross-sectional views of a programmable structure according to another embodiment of the invention. The structure has an ion conductor electrode contact interface formed around the ion conductor. Figures 9 and 10 still disclose the invention A cross-sectional view of a programmable structure according to another embodiment, the structure has an ion conductor electrode contact interface, and the interface is formed around the ion conductor. Figures 11 and 12 disclose a programmable device with a horizontal structure according to the present invention. Figures 13 to 19 show that the programmable device of the present invention is organized by reducing the surface area of the ion / electrode conductor interface. The programmable device of the invention has a tapered ion conductor. Figures 21 to 24 show that the programmable device of the present invention includes a floating electrode. Figures 25 to 29 show the common electrode programmable device constructed by the present invention. 4S & W / 0112TW / AX0N, 29089.1120 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) -II ϋ ϋ ϋ n ϋ One: Mouth, · ϋ · 1 nnn I 1 ϋ ϋ β— ϋ · 1 a— n ϋ n · 1 ϋ -1 I ϋ ϋ ϋ I ϋ I (Please read the precautions on the back before filling out this page) 523745 A7 B7 V. Description of the invention (those familiar with this technology can understand these drawings The illustration is a simple and clear illustration of the present invention, and is not drawn to the correct scale. For example, to help enhance the understanding of the embodiment of the present invention, the illustration exaggerates the relative proportions of certain elements to other elements. Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 100 > 200.1 1 10 1 12 120, 130 140 155 160 165 255 400 402 420, 430 440 460 470 510, 610 520, 620 Programmable microelectronic structure substrate insulating material electrode Ion Conductor Buffer Electroprecipitate Contactor Barrier Level Programmable Structure Integrated Circuit Electrode Ion Conductor Contactor Amorphous Silicon Diode Vacuum Tube Bit Line Character Line 4S & W / 0112TW / AXON, 29089.1120 -1 ϋ ϋ ϋ ϋ ea§ ϋ · -I ϋ ^ -1 n III ϋ nnn ϋ n ϋ ϋ ϋ ϋ ϋ ϋ n II · (Please read the 5 notes on the back before filling this page) -¾ 9 523745 A7 B7 V. Description of the invention ( 〖〇) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 610 Transistor 700 Programmable device 710 Inert electrode 720 Oxidizable electrode 730 Ion conductor 740, 750 Insulation layer 900 Programmable device 910 Inert electrode 920 Oxidizable electrode 930 Ion conductor 940 950 insulating layer 1100 programmable device 1110, 1 120 electrode 1130 ion conductor 1140 insulating material 1300 programmable device 1310, 1320 electrode 1330 ion conductor 1340 insulating layer 1400 programmable device 1410, 1420 electrode 1430 ion conductor 1450 insulating material 4S & W / 0112TW / AX0N, 29089.1120 1〇 (Please read the precautions on the back before filling this page ) Order ------ ^ --- line! This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 523745 A7 B7 V. Description of the invention (u) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economy 1500 Programmable device 1530 Ion conductor 1540 Perforated 1600 can Programmable device 1700 Programmable device 1720 Electrode 1730 Ion conductor 1800 Programmable device 1810, 1820 Electrode 1830 Ion conductor 1840 Insulation layer 1850 Insulation column 1900 Programmable device 1930 Ion conductor 1950 Pillar 2000 Programmable device 2010, 2020 Electrode 2030 Ion conductor 2040 Insulation Layer 2100 Programmable device 2110 First electrode 2120 Second electrode 2130 Third electrode 2140, 2150 Ion conductor part 4S & W / 0112TW / AX0N, 29089.1120 11 (Please read the precautions on the back before filling this page)

-I · This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 523745 A7 B7 V. Description of the invention (\ L) 2160, 2170 Electrodeposit 2500 Programmable device 510 Electrical connector 2520 Common surface Electrode 523 0, 2540 Electrode 2700 Programmable device 2710, 2720 Common electrode 2725 Electrode 2730, 273 5 Ion conductor 2740, 2750 Insulation layer 2800 Programmable device 2 830, 283 5 Ion conductor 2900 Structure 2902 -2916 Programmable device 2920 Electrode 2930 -2936 Electrode 293 8 -2944 Detailed description of the preferred embodiment of the electrode Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs This invention relates to a microelectronic device. More specifically, the present invention relates to a programmable structure or device suitable for a variety of different integrated circuit applications. 4S & W / 0112TW / AXON, 29089.1120 12 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 523745 A7 B7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (Y3) 1 and FIG. 2 show that the programmable microelectronic structures 100 and 200 are formed on the surface of the substrate 110 according to an embodiment of the present invention. Structures 100 and 200 include electrodes 120 and 130, an ion conductor 140, and optionally a buffer or barrier layer 155 and / or 255. Generally, the structures 100 and 200 are installed when the bias voltage is greater than the threshold voltage (VT), as detailed below. Under the application of the bias voltage across the electrodes 120 and 130, the electrical characteristics of the structure 100 will change. For example, according to an embodiment of the present invention, when a voltage V 3 VT across the electrodes 120 and 130 is applied, the conductive ions in the 'ion conductor 140 begin to migrate and an electroprecipitate is formed on or near the cathodes of the electrodes 120 and 130 ( electrodeposit) (eg, electrodeposit 160); however, the electrodeposit is not necessary for practicing the invention. The term "electrodepositor" refers to an increase in concentration in a region of an ionic conductor due to a reduced amount of metal, or an increase in the concentration of another conductive substance compared to the concentration of the substance in a large amount of ionic conductor material. When the electroprecipitation is formed, the resistance between the electrodes 120 and 130 decreases, and other electrical characteristics change accordingly. As detailed below, in the absence of insulation barriers, the critical voltage must increase the electroprecipitation from one electrode to another, and therefore the resistance of this device is significantly reduced. It is approximately the oxidation-reduction reaction potential of the system, typically approximately Hundred millivolts. If the same voltage is applied upside down, the electroprecipitate will decompose back into the ionic conductor and the device will return to a high resistance state. According to other embodiments of the present invention, the application of the electric field between the electrodes 120 and 130 will cause the ions to decompose and migrate in the conductor 140 in the absence of the formation of an electroprecipitation. Read the notes on the back and fill out this page) 0 · • Line-13 523745 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (1Λ) The electrical characteristics of the device 100 have changed. Structures 100 and 200 can be used to store information, so they can be used in memory circuits. For example, the structure 100 or other programmable structure according to the present invention can be suitably applied to a memory device instead of dynamic random access memory, static random access memory, programmable read-only memory, and programmable read-only memory can be erased Memory or electronics can erase devices such as programmable read-only memory. In addition, the programmable structure of the present invention can be used in other applications when the electrical characteristics of some electrical circuits of other applications need to be programmed or changed. The substrate 110 may include any suitable substance. For example, the substrate 110 may comprise a semiconductor, conductive, semi-insulating, insulating substance or any combination of these substances. According to an embodiment of the present invention, the substrate 110 includes an insulating substance 112 and a portion 114 includes a microelectronic device formed of a semiconductor substrate. Levels 1 12 and 1 14 may be separated by redundant levels (not listed), for example, levels are typically used to form integrated circuits. Since the programmable structure can be formed on an insulating or other substance, the programmable structure of the present invention is particularly suitable for applications where the space of a substrate (such as a semiconductor material) is premium. The electrodes 120 and 130 may be formed of any suitable conductive substance. For example, the electrodes 120 and 130 may be formed of a polysilicon material or a metal. According to the embodiment of the present invention, when a sufficient bias voltage (V 3 VT) crosses the electrode (oxidizable electrode) and in the operation of the programmable device (inert electrode), the other electrodes are relatively inert and cannot be decomposed, the electrode 120 One of 130 and 130 is formed of a substance containing a metal decomposed in the ion conductor 14o. For example, the electrode 120 may be an anode during the writing process. 4S & W / 0112TW / AXON, 29089.1120 ία This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back first) (Fill in this page again)

523745

It includes a substance containing silver decomposed in the ion conductor 140; the electrode 13 may be a cathode during the writing process, and is composed of inert substances such as tungsten, nickel, molybdenum, platinum, alloy silicide, and the like. At least one electrode is formed of a metal substance contained in the ion conductor 140, which makes it easy to maintain the concentration of the metal desired to be decomposed within the ion conductor 140, which in turn helps the rapid and stable formation of the electrodeposition 160 in the ion conductor 140. When using structures 100 and 200, other electrical characteristics change. In addition, for other electric buildings (cathode during the writing process), an inert substance is used to promote the electrolysis of the electroprecipitate, which can form and / or restore the programmable device to a wiped state after applying a sufficient voltage. During the wiping process, the decomposition of any possible electrodeposition source should preferably begin at or near the electrodepositable surface of the oxidizable electrode. The initial decomposition of the electrodeposition on the electrodepositable electrode interface is easier. By forming the structure 100, the resistance on the electrodeposition interface of the oxidizable electrode is greater than the resistance at any point along the electrodeposition, especially The interface between the electrodeposition and the inert electrode. ~ One way to get a relatively low resistance at an inert electrode is to form a relatively inert, non-oxidizing material, such as a platinum electrode. Use of these materials to reduce the formation of oxides on the interface between the ion conductor 140 and the inert electrode and the formation of a compound or mixture of the electrode material and the ion conductor 140 material, which typically has a higher resistance. By forming a barrier layer between the oxidizable electrodes (the anode during the writing process), a relatively low resistance can be obtained at the inert electrode, during which the barrier step 4S & W / 0112TW / AXON, 29089.1120 ir Standard (CNS) A4 specification (210 X 297 male f) (Please read the precautions on the back before filling this page) -------- Order ------- Γ Line 丨 The Intellectual Property Bureau of the Ministry of Economic Affairs Printed by an employee consumer cooperative 523745 Printed by an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 —-------- B7___ Description of the invention (\ b) Material composition with relatively high resistance. Typical high-resistance materials include ion-conducting materials (eg, 'Agx〇, AgxS, AgxSe, AgxTe, between X 3 2, Agyl', where x 彐 1, Cul2, CuO, CuS, CuSe, CuTe, G 6 O? «Or 〇« * Λ Sl〇2) Hierarchy (eg: Tier 155 and / or Tier 255) ° Some materials have additional advantages, as detailed below. The polar ionic conductor interface provides a rough surface of the inert electrode (female mouth: rms 値 is greater than about one nanometer), and the electrodeposition does grow. The rough surface can be formed by manipulating the storage parameters of the film and / or by a part of the electrode on the conductor surface. During the writing process, the stomach ’s electric field to the stomach is formed around the peaks of the rough surface, so the electrosink can be formed around the peaks. As a result, when the applied voltage crosses the electrical @ 120 ISI 13 (), the electrical characteristics can be changed more reliably and consistently by providing a rough interface between the inert electrode (cathode during the write process) and the ion guide # 14〇. " ^^ Electrode materials have a tendency to decompose or diffuse into the ionic conductor 140, especially during the construction and / or operation of the structure 100. Thermal diffusion is undesirable because it reduces the resistance of the structure 100 and therefore reduces changes in electrical characteristics during the use of the structure 100. In order to reduce the thermal diffusion of the unwanted oxidizable electrode material to the ion conductor 140 and another embodiment of the present invention, the oxidizable electrode includes a metal that inserts / converts a metal sulfide or selenite material, such as: where a is silver (Ag) or copper (Cu), B is sulfur (S) or selenium (Se), and M is a transition metal such as giant (Ta), vanadium (V) and thorium (Ti), 4S & W / 0112TW / AX0N, 29089.1120 16 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page). Line-523745 A7 B7 V. Description of the Invention (丨 Γ |) and χ ranges from approximately 0.1 to 0.7. When a metal is provided to participate in the electrode sink source to grow to apply sufficient voltage across the electrodes 120 and 130, the inserted material mitigates the poor thermal diffusion of the metal (silver or copper) to the ionic conductor material. For example, when silver is inserted into a TaS2 film, the TaS2 film can contain up to 66.8 percent silver. The non-crystalline material prevents poor metal diffusion. An amorphous raw material is formed, for example, by natural vaporization of the target raw material containing A ^ ΜΒ ^^ χ. Cardiac silver iodide (Agl) is another suitable raw material for oxidizable and inert electrodes. Similar to the aforementioned Αχ (ΜΒ2) ι · χ raw material, when a sufficient bias voltage is applied, α-silver iodide can be used as a source of silver during the structure's 1000 'operation. 140. Silver iodide has relatively low activation energy for current conduction and does not need to be doped to achieve relatively high electrical conductivity. When the oxidizable electrode is formed of silver iodide, the silver of the silver iodide layer will be consumed during the action of the structure 100 unless the electrode is provided with an excessive amount of silver. A method of providing excess silver 'is to use a silver iodide layer as a buffer layer, as described above, to form a silver layer adjacent to it. Silver iodide grades (eg, grades 155 and or 25 5) reduce the thermal diffusion of silver to the ionic conductor 140, but do not seriously affect the conduction of silver during the operation of the structure 100. In addition, the use of silver iodide can increase the operational efficiency of structure 100, since silver iodide mitigates non-Faradaic conduction (electron conduction does not participate in electrochemical reactions). Other raw materials suitable for buffer levels 155 and or 255 include Ge02 and SiOx. Amorphous Ge02 is quite permeable and absorbs silver during the operation of the device 100, but compared to 4S & W / 0112TW / AXON, 29089.1120, which does not include a buffer layer, this paper size applies Chinese National Standard (CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Line-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives 523745

5. Description of the Invention (θ) ′ The structure or device prevents the heat of the silver from diffusing to the ion conductor 140. When the ion conductor 140 contains germanium, Ge02 is formed by exposing the ion conductor 140 to an oxidizing environment at about 300 ° C to 800 ° C, or by exposing the ion conductor 140 to radiation having an energy greater than the gap between the ion conductor raw materials and the frequency band. Formed by an oxidizing environment. Ge02 can also be stimulated with natural vaporized precipitates (from a Ge02 target) or chemical vaporized precipitates (from a GeH4 and a 02). By placing a buffer layer (e.g., Ge02 or SiOx) between the ion conductor 140 and the inert electrode, the buffer layer can also be used to increase a "write voltage". The buffer raw material may be a metal such as silver to diffuse the buffer and participate in the electrochemical reaction. According to another embodiment of the present invention, at least one of the electrodes 120 and 130 is formed of a metal suitable for use as an interconnection. For example, the electrode 130 can form part of an interconnect structure in a semiconductor integrated circuit. According to another aspect of the present embodiment, the electrode 130 is formed of a material that does not easily dissolve in the raw material including the ion conductor 140. Typical raw materials suitable for both interconnect and electrode 130 materials include metals and compounds such as tungsten, nickel, molybdenum, platinum, alloy silicides, and the like. Steps 155 and or 255 also include materials that limit the migration of ions between the conductor 140 and the electrode. According to a typical embodiment of the present invention, the barrier layer includes a conductive substance such as titanium nitride, titanium tungsten, a compound thereof, or the like. The barrier may be electrically inert, that is, the barrier allows electrons to conduct in the structure 100 or 200, but does not provide ions to conduct in the structure 200. With 4S & W / 0112TW / AXON, 29089.1120 ι This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 x 297 mm) 丨 > 丨 ---------- disc (please read first Note on the back, please fill out this page again) Printed by OJ_ MV MM W MM WW MM SB MM W MM MM MB an · w AM · aw · w ma w 523745 Intellectual Property of Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives V. Invention Description (丨 (¾) A7 B7

Electrically inert barriers reduce unwanted dendrite growth during the operation of the programmable device, and thus facilitate the wiping off of the electroprecipitate 160 when a bias voltage opposite to that used to grow the electro sinker is applied. Or dissolved. In addition, the use of a conductive barrier allows an "inert" electrode to be formed from an oxidizable material because the barrier prevents the electrode material from diffusing into the ion conductor. The ion conductor 140 is formed of a material that conducts ions when a sufficient voltage is applied. Suitable materials for the ion conductor 140 include glass and semiconductor materials. In the exemplary embodiment of the present invention, the ion conductor 140 is formed of a chalcogenide material. The ionic conductor M0 also suitably contains a material having decomposition conductivity. For example, the ionic conductor 140 includes a solid solvent including decomposed metals and or metal ions. According to an exemplary embodiment of the present invention, the conductor 140 includes a metal and / or metal ions decomposed in a chalcogen thin film material glass. Typical chalcogen film material glasses with decomposed metals according to the present invention include ASxSl_x-Ag, GexSebX-Ag, GexSbx-Ag, AsxS! _X-Cu, GexSe and x-Cu, GexS ^ x-Cu solid solvents, where x is in In the range of about 0.01 to 0.5, other chalcogen thin film material raw materials include silver, copper, zinc, compounds of these raw materials, and the like. In addition, the conductor 140 includes a network modifier that affects the mobility of ions in the conductor 140. For example, metal materials (such as silver), halogens, halides, or hydrogen may be added to the conductor 140 to improve ion mobility, and thus increase the speed of erase / write of the structure. A solid solvent suitable for the ion conductor 140 can be formed by various methods. For example, the solid solvent can be precipitated through a step 4S & W / 0112TW / AXON, 29089.1120 19 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297¾ ^ (Please read the precautions on the back before filling (This page). 523745 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ------------ B7___ V. Description of Invention (丄 0) Layer formation, such as metal coating on ion conductor raw materials such as sulfur It belongs to the thin film material glass and exposes the metal and glass to thermal and / or image decomposition process. According to a typical embodiment of the present invention, the solid solvent of As2S3-Ag is through the precipitation of AhS3 on the substrate, and the Ag film is precipitated on As2S3 On the other hand, these films are exposed to light with an optical gap larger than A ^ S3, for example, light having a wavelength of less than about 500 nm. If necessary, the network modifier can be applied to the conductor 140. Storage period (for example, when the modifier appears in the precipitation material or during the precipitation of the conductor 140) or after the precipitation of the conductor 140 (for example, by exposing the conductor 14 to the network modifier containing Environment) join Conductor 140. According to another embodiment of the present invention, a solid solvent may be formed by precipitating a component on a substrate or another raw material layer and chemically reacting the first component with the second component. For example, germanium (most Fortunately, it will be precipitated on a part of the substrate, and germanium will chemically change with H2Se to form Ge-Se glass. Therefore, silver or other metals can be added to the glass, as described above. According to the embodiment of the present invention, a The solid solvent ion conductor 140 can be formed by precipitating a sufficient amount of metal on the ion conductor raw material, so that a part of the metal can be decomposed in the ion conductor raw material, and a part of the metal is left on the surface of the ion conductor to form an electrode (such as the electrode 120). In another alternative embodiment of the invention, a solid solvent containing a decomposed metal is placed directly on the substrate 110 and the electrode, and then forms an ionic conductor. Many conductive materials, such as metals, are decomposed in ion-conducting materials such as chalcogen film materials Will rely on several factors, such as a large amount of gold 4S & W / 0112TW / AXON, 29089.1120 (Please read the precautions on the back before (Write this page)-· --- line. This paper size is applicable to China National Standard (CNS) A4 (210 x 297 mm) 523745 A7 ------- B7_ V. Description of invention (M) The energy applied in the process. However, the amount of thorium metal and energy is sufficient to decompose in the chalcogenide film material by photolysis (ph〇t〇diSs〇luti〇n), the decomposition process will set limits on itself, It essentially stops when the metal cations are reduced to their low oxidation state. In the case of As2S3-Ag, this situation occurs when Ag4As2S3 = 2Ag2s + AS2S, and the silver concentration is about 44% of the atom. On the other hand, if a sufficient amount of metal is provided for thermal decomposition to decompose in the chalcogen film material, a higher metal concentration will be obtained. According to another embodiment of the present invention, a solid solvent is formed by photodecomposition, and a large amount of homogeneous ternary compounds and added metals are added to cereals by thermal diffusion (for example, in an inert ambient temperature of about cc to 150 °). c) Forming a solid solvent 'This solid solvent contains, for example, about 30 to 50 percent of the atom, preferably 34 silver. Ionic conductors with a metal concentration higher than the photodegradable soluble standard can promote the formation of electrodeposits, which are stable at the operating temperatures of the devices 100 and 200 (about 85 to 150 ° C). In other words, a solid solvent can be formed by thermally dissolving a metal into an ionic conductor at the above temperature, however, a solid solvent formed only by photodecomposition is considered to have less homogeneity than a film formed with similar metal concentration by photodecomposition and thermal dissolution. Sex. The ionic conductor 140 also contains a filling material, which fills gaps or cracks. Suitable filling materials include non-oxidizing and silver-free basic materials, such as I: non-conductive, non-fused silicon oxide and / or silicon nitride, with a size of overlapping area less than about 1 nm, The growth of Shen Dianwu was not helpful. In this example, the filling material appears in the ionic conductor at a considerable proportion of about 5% to reduce the source of the electrosink when the device is exposed to elevated temperatures. 4S & W / 0112TW / AXON, 29089.1120 Ί Size of this paper Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) · I-! Line · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 523745 A7 Wisdom of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Property Bureau -----------_- V. The possibility of the invention's description breaking down into ternary raw materials by itself, which leads to a more stable operation of the device without changing the performance. The ionic conductor 140 also contains halogenated materials to reduce the effective cross-sectional area of the ionic conductor. In this example, the filling material can be the same filling material as described above, but its cross-sectional area is about 50 nanometers', and its concentration in the ion conductor material is as high as about 50%. The filling materials also include metals, such as silver or copper, to fill the voids in the ionic conductor materials. According to an exemplary embodiment of the present invention, the ion conductor 140 includes a germanium-selenide glass with silver interspersed therebetween. The germanium selenide raw material is generally formed of selenium and Ge (Se) 4/2 tetrahedron, which can be combined in various ways. In the selenium-rich parts, germanium is quaternary and selenium is bivalent. This means that the glass composition is similar to germanium 0.2 and selenium 0.8, which has an average valence of about 2.4. The theory of limited counts considers that this monovalent glass is most ideally restricted, and therefore, it is very stable with respect to making the glass into opaque crystals. This network of glass can self-organize and become pressure-free. For any kind of additive such as silver, a solvent for delicately dispersing and mixing glass solids can be easily made. Therefore, according to an embodiment of the present invention, the ion conductor 140 includes a glass having a composition of Ge.17Se0.83 to Ge.25Se (). 75. The composition and structure of the raw material of the ion conductor 140 usually forms a conductor according to the starting material or the target material used. Generally speaking, it is necessary to form a homogeneous raw material layer so that the conductor 140 can promote reliable and repeatable device performance. According to an embodiment of the present invention, the target for physical vapor deposition of raw materials suitable for the ion conductor 140 is to select appropriate ampoules, prepare ampoules, and shape the 4S & W / 0112TW / AXON, 29089.1120 22 This paper standard is applicable to Chinese National Standards (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling this page). ·% Order. — I! —— l ·! Line! ^ ϋ .1 ϋ n ϋ ϋ I I I ϋ ϋ .1 H-523745 A7 B7 V. Description of the Invention (z3) During the formation of the glass, maintain the appropriate temperature, slowly shake the composition, and cool the composition. Volume and wall thickness are important factors to consider when choosing a glass ampoule. The thickness of the inner wall must be thick enough to withstand the gas pressure generated during the glass formation process, and preferably thin enough to facilitate heat exchange during the formation process. According to the exemplary embodiment of the present invention, a quartz ampoule with an inner wall thickness of about 1 mm is used to form a chalcogen film material glass based on selenium and tellurium, and a quartz ampoule with an inner wall thickness of about 1.5 mm is used to form a sulfur-based Chalcogen film material glass. In addition, the volume of the ampoule is preferably 5 times larger than that of the liquid glass precursor. Once the ampoule prepared for the glass composition is selected, the ampoule is rinsed with hydrofluoric acid, ethanol, and acetone according to the embodiment of the present invention, the ampoule is dried at about 120 ° C for at least 24 hours, and the ampoule is drained and heated to become Cherry red, then, the ampule is cooled under vacuum, the ampule is fully charged, the ampule is emptied, the ampule is heated while avoiding the melting of the constituent elements to release any remaining oxygen, and the ampule is sealed. This process reduces oxygen contamination and promotes massive homogeneous growth of the glass. The melting temperature during glass formation depends on the glass material. In the case of germanium-based glass, sufficient time is required for the chalcogen to react with all available germanium at low temperatures to avoid subsequent rise in temperature (selenium at 920 ° C The vaporization pressure is 10 ATM · and 20 ATM at 720 ° C.) Explosion. In order to reduce the risk of explosion, the glass formation process was started with a rapidly increasing ampoule temperature to about 1 hour 3 00 ° C for germanium-based glass (about 200 ° C for sulfur-based glass), 4S & W / 0112TW / AXON, 29089.1120 23 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ------------- Brew (Please read the note on the back? Matters before filling in this Page) Order-! L ·! Line! Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 523745 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the Invention (2 buckets) and maintain this temperature for about 12 hours. Next, the temperature is slowly increased (about 0.5 ° C per minute) until it is about 50 higher than the liquid temperature of the raw material. (: The temperature, keep the ampoule at about this temperature for about 12 hours. Then the temperature is raised to about 940 ° C to ensure that all non-reactive germanium is in the germanium-based glass, or about 700 ° C in the sulfur-based glass. The ampule must be kept At this high temperature for 24 hours. The molten glass composition is preferably shaken slowly at a rate of 20 times per minute for at least about 6 hours to increase the homogeneity of the glass. Quenching is preferably performed at a temperature when the gas and liquid are in equilibrium, so that The required composition is produced into a glass-like substance. In this example, the quenching temperature is about 50 ° C higher than the liquid temperature of the glass raw material. The chalcogen-rich thin film material glass contains glass with a low concentration range and a high limit. When the glass composition price The number is much higher than the ideal valence (for example, the germanium-selenium system has a valence of about 2 · 4), and the quenching rate must be fast enough to ensure vitrification, such as in ice water or a relatively strong coolant such as urea and ice water Quenching. As for the most ideal glass, quenching can be performed at about 25 ° C. According to the exemplary embodiment of the present invention, at least a part of the structure 100 is formed in the perforation of the insulating substance 150. In the insulating substance Forming a portion of the structure 100 in the perforations of 150 is satisfactory because such formation may allow relatively small structures, for example, to be formed at 10 nm, among other reasons. In addition, the insulating raw material 150 helps isolate Structure 100 with different electrical elements. Insulating raw material 150 suitably contains raw materials, which can prevent poor electron or ion diffusion from the structure 100. According to the embodiment of the present invention, the raw material 4S & W / 0112TW / AXON, 29089.1120 This paper size applies to China National Standard (CNS) A4 Specification (210 X 297 mm) --------------------- Order ---- 丨!-Line-- (please first Read the notes on the back and fill in this page) 523745 A7 B7 V. Description of the invention (> $) 150 Contains silicon nitride, silicon oxynitride, and raw materials for polymerization such as polythioimide or parylene And its compounds. · A contactor 165 will suitably electrically couple one or more electrodes 120, 130 to help form an electrical contact with each electrode. The contactor 165 may be formed of any conductive material, preferably Formed from metals such as aluminum, aluminum alloys, tungsten, or copper Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page)! LINE_ According to the embodiment of the present invention, the structure 100 is formed by forming an electrode 130 on the substrate 110. The electrode The 130 may be formed by any suitable method, for example, precipitating a layer of the raw material of the electrode 130, imitating a pattern of the electrode material, and etching the material to form the electrode 130. The insulating layer 150 may be formed on the electrode 130 and the substrate 110 via a precipitation insulator, and Use appropriate imitation and etching processes to form perforations in the insulating material. The ion conductor 140 and the electrode 120 can be formed on the insulating layer 150 by precipitating the raw material of the ion conductor 140 and the raw material of the electrode 120 in the perforation. These ionic conductor and electrode raw material precipitates are selective, that is, the raw materials are only precipitated in the perforation, or the precipitation process is relatively non-selective. If one or more non-selective precipitation processes are used, using, for example, chemical mechanical polishing or etching techniques, any excess material remaining on the surface of the insulating layer 150 will be removed. The barrier layers 155 and or 255 may likewise be formed by any suitable precipitation and or etching process. Programmable structure information utilizing the present invention can be stored by using the electrical characteristics of one or more structures. For example, during a proper write operation, the resistance of the structure may be changed from a "0" or off state to a "1" or on state. Similarly, during the erase operation, the device can be changed from "1" state 4S & W / 0112TW / AXON, 29089.1120 25 This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 meals) 523745 A7 B7 Economy Printed by the Consumer Cooperatives of the Ministry of Intellectual Property Bureau V. Invention Description (¾) is "0". Furthermore, as detailed below, the structure will have multiple programmable states, and multi-bit information can be stored in a single structure. Write Operation FIG. 3 illustrates the current-voltage characteristics of a programmable structure (eg, structure 200) according to one embodiment of the present invention. The figure shows that the size D of the perforation is about 4 microns, the conductor 140 is about 35 nanometers thick and formed of Ge3Se7-Ag (near AS8Ge3Se7), the electrode 130 is inert and formed of nickel, the electrode 120 is formed of silver, and the barrier 25 5 is a natural nickel oxide. As shown in FIG. 3, the current passing through the structure 200 in the closed state will start to rise due to a bias of 1 volt (such as curve 310); however, once the writing step is performed (that is, the formation of an electrodeposition) flows through the conductor The resistance of 140 drops significantly (ie, to about 200 ohms), as shown by curve 32 in FIG. 3. As described above, when the electrode 130 is coupled to the cathode of a voltage supplier, compared to the electrode 120, an electrodeposition starts to form near the electrode 130 and grows toward the electrode 120. An effective threshold voltage (that is, a voltage that needs to induce the growth of the electroprecipitate and penetrate the barrier 25 5, and thus the coupling electrodes 320 and 3 3 0 are relatively high due to the barrier 2 5 5. In particular, the voltage V 彐 VT Must be suitable for a structure 200 sufficient to cause electrons to penetrate the barrier 25 5 (when the barrier 25 5 contains an insulating layer) to form an electrical deposit and overcome the barrier (such as penetration or leakage) and conduct through the conductor 140 and at least a portion of the barrier 25 5. 4S & W / 0112TW / AXGN, 29089.1120 26 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) < Please read the notes on the back before filling this page) d · --line 523745 A7 B7 V. Description of the invention (top /]) According to the embodiment of the present invention, when no exposure barrier layer appears, 'because there is no insulation barrier formed between the ion conductor 140 and any of the electrodes 120'130, The initial write threshold voltage is relatively low. The state of the read operating element can be read without severely disturbing the state. For example, adding a smaller forward or reverse bias voltage than the critical voltage (about 1.4V as shown in Figure 3) to the electrodeposition, Or use current to limit it to less than or equal to the lowest stylized current (current that will produce the highest resistance 値). The current limit (about 1 milliamp) read operation is shown in Figure 3 ° In this case, the voltage extends from 0 to about 2 volts, and the current rises to a set range (from 0 to 0.2V), indicating low resistance (ohmic / Linear current voltage) on state. Another way to perform a glitch-free read operation is to add a fairly short pulse, which will have a voltage higher than the starting potential of the electrochemical sinker, so that no considerable Faraday current passes, that is, almost all The current will polarize / charge the device but will not enter the electrodeposition process. Erase operation A programmable structure (such as structure 200) can be erased with a bias voltage that is opposite to that used for a write operation, where the applied bias level is equal to or greater than the threshold voltage of the electrodeposit in the opposite direction. According to the exemplary embodiment of the present invention, a sufficient erasing voltage (ν3ντ) is applied to the structure 200 with a period of 4S & W / 0112TW / AXON, 29089.1120 27 This paper size applies to China National Standard (CNS) A4 (210 X 297) (Please read the note on the back? Matters before filling out this page). • Line _ Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 523745 Α7 Β7 5. The description of the invention (β) is based on the length of the conductive cycle It depends, but it is generally less than 1 millisecond to restore the structure 200 to its off state with a resistance of more than one million ohms. When the programmable structure does not include a barrier between the conductor 140 and the electrode 120, the critical voltage of the erase structure is much lower than the critical voltage of the write structure, because, unlike a write operation, the erase operation does not require electron tunneling through the wall Barrier or collapse the barrier. Control of operating parameters The concentration of the conductive material of the ion conductor can be controlled by adding a bias voltage across the programmable device. For example, a metal such as silver can be removed from a solvent by using a negative potential exceeding the reduction potential of the conductive material. Conversely, a conductive material can be added to the ion conductor (self-electrode) by applying an oxidation potential bias exceeding the material. Thus, for example, if the concentration of the conductive material exceeds the concentration required for a particular device application, the concentration can be reduced using a reverse bias to reduce the concentration of the conductive material. Similarly, adding sufficient forward bias voltage can also add metal from the oxidizable electrode to the solvent. In addition, under normal operating conditions, it is possible to remove excess metal from an inert electrode by using a reverse bias or extended bias on the device to be wiped for a long time. Control of the conductive material can be achieved automatically by a suitable microprocessor. This technique can also be used to form electrodes from substances in ionic conductor raw materials. For example, silver of the ionic conductor may be plated to form an oxidizable electrode. This allows the oxidizable electrode to be formed after the element is fully formed. “So” mitigates 4S & W / 0112TW / AXON, 29089.1120 28 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read first Note on the back? Matters need to be completed on this page.) Order: I-.! Line. Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 523745 A7 B7 ------- ---- V. Description of Invention ($) Problems related to conductive substances that diffuse from oxidizable electrodes during device fabrication. As described above, according to another embodiment of the present invention, multi-bit data can be stored in a single programmable structure by controlling a large amount of electroprecipitate formed during the writing process. The large-capsule electroprecipitation formed during the writing process depends on the amount of coulomb or charge provided to the structure during the writing process and can be controlled using a current-limited power source. In this example, the resistance of the programmable structure is determined by Equation 1 'where R is. 11 is the on-state resistance, vT is the critical potential for electrodeposition, and Ilim is the maximum current allowed during a write operation. ντ

Ron = XXXX Equation 1 In fact, the limit of the amount of information stored in each cell depends on how stable the resistance state has decayed over time. For example, 'If the stylized resistance range of the structure is about 3.5 kQ and its resistance drifts about 250 Ω at a specific time in each state, about 7 bands of the same size (7 states) will be formed, allowing 3 bits Data is stored in a single structure. Under this limit, the resistance will have almost no drift within a certain time limit. The information can be stored in a continuous state, that is, in an analog state. A portion of the integrated circuit 402 includes a programmable structure 400 formed to provide additional insulation from the electronic device as shown in FIG. 4. According to the exemplary embodiment of the present invention, the structure 400 includes electrodes 420 and 430, a 4S & W / 0112TW / AXON, 29089.1120 29 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read first Note on the back, please fill in this page again) •% line · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 523745 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (>) Ionic conductor 440, contact Point 460 and an amorphous silicon bipolar vacuum tube 470, such as a Schottky or p-η junction bipolar vacuum tube, are formed between the contact point 460 and the electrode 420. Many of the rows and columns of the programmable structure 400 can be fabricated into a high density structure suitable for providing a relatively large storage density in a memory circuit. In general, the maximum storage density of a memory device is limited by the size and complexity of the row and column decoding circuits. However, the programmable structure storage stack can be appropriately assembled on the integrated circuit, and its entire semiconductor chip range is dedicated to row decoders, sense amplifiers, and data management circuits (not shown) because the structure 400 does not require any substrate real estate. . In this way, storage density of billions of bits per square centimeter can be achieved using the programmable structure of the present invention. Utilizing this method, the programmable structure is essentially an additional technology, adding capabilities and functions to existing semiconductor integrated circuit technology. FIG. 5 outlines a part of a memory device, including a structure 400 having an insulated p-n contact 470 at an intersection of a bit line 510 and a word line 520 of a memory circuit. Figure 6 illustrates an alternative insulation system that uses a transistor 610 to insert an electrode and a programmable structure contact at the intersection of bit line 615 and word line 620 of a memory device. 7 to 10 illustrate a programmable device according to another embodiment of the present invention. The device shown in Figs. 7 to 10 includes an electrode (e.g., a cathode during a write process), and has a smaller cross-sectional area connected to the ion conductor than the device shown in Figs. 1, 2, and 4. The smaller electrode interface area is considered to increase the efficiency and durability of the device, because the added ions in the solid solvent 4S & W / 0112TW / AXON, 29089.1120 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back before filling this page) -------- ^ --- One --- ^ --- ^! A_w --------- ------------- 523745 A7 B7 Five Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs printed an invention note (Qiao) Can participate in the process of electrodeposition formation. This reduces any cathodic plating from ions that do not participate in the electrodeposition process. 7 and 8 illustrate a cross-section portion and a top cutaway view of the programmable device 700, including an inert electrode 710, an oxidizable electrode 720, and an ion conductor 730 previously laid on an insulating layer 740, such as silicon oxide, silicon Nitride, or the like. The structure 700 is formed by depositing an inert electrode raw material layer and an insulating layer 750 on the insulating layer 740. A perforation is formed by penetrating the insulating layer 750 and the electrode raw material layer 710. An anisotropic etching process (eg, reactive ion etching or ion manufacturing) is used, and the perforation extends to and / or through the insulating layer 740. a part of. The perforations are then filled with the ionic conductor material and are suitable for being added to form a solid solvent, as described herein. Any excess ionic conductor material will be removed from the surface of layer 750 and electrodes 73 0 will be formed, for example using precipitation and uranium engraving processes. In this example, the area of the inert electrode (cathode during writing) connected to the ion conductor 730 is the surface area of the electrode 710 near the conductor 730, rather than the area of the ion conductor, as shown in Figures 1-2 and 4 As shown. 9 and 10 illustrate a programmable device 900 having an inert electrode 910, an oxidizable electrode 920, an ion conductor 930, and insulating layers 940 and 950 according to another embodiment of the present invention. The structure 900 is similar to the structure 700, except that once the perforation forms the penetration layer 750, an isotropic etching process (eg, chemical or plasma) is used to form the perforation penetration electrode 4S & W / 0112TW / AX0N, 29089.1120 31 papers Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the precautions on the back before filling out this page) ···· -I! Line-45 7 3 2 5 Staff of Intellectual Property Bureau, Ministry of Economic Affairs The consumer cooperative prints five A7 ________B7__Explanation of the invention (苫 ^) 910 'The intersection point so inclined is formed between the ion conductor 930 and the electrode 91. 11 and 12 illustrate another programmable device no0, which has a lowered electrode / ion conductor interface according to the present invention. The structure 1100 includes electrodes 1 1 10 and 1 120 and an ion conductor 1 13 0. The ion conductor i 13 0 is formed on the surface of the insulating raw material 1140 instead of being formed in a perforation as described above. In this example, the programmable structure is formed by tapping on the surface of the insulating material 1140 via a defined ion conductor 1130 (for example, using precipitation and silt engraving techniques), and forming electrodes 1 1 1 0 and 1 1 2 0, so that each One electrode is in contact with a part of the ion conductor. In the specific example shown here, the electrodes are formed on a part of the ionic conductor and the insulating material, and they are all connected. Although the thickness of the layers may vary depending on the particular application of the device, in the preferred embodiment of the present invention, the thickness of the ion conductor and the electrode film is about 1 to 100 nm. The side dimensions under the lithography of this device section can be obtained by overexposing and / or overetching the film layer. According to another embodiment of the present invention, FIG. 13 illustrates the device 1 300. Structure 1 300 is similar to the device shown in Figs. 7 and 8, except that the cross-sectional area of the ionic conductor connected to the electrode is reduced by filling a part of the perforation with a non-ionic conductive substance, rather than penetrating the electrode layer by etching. And decrease. The structure 1 300 includes electrodes 1310 and 1 320 and an ion conductor 1 33 0 formed in an insulating layer 1 340. In this example, the ion conductor 1330 is formed by creating a trench in the insulating layer 1 340, and the diameter of the trench is represented by D2. The grooves will be made using, for example, interference lithography techniques or insulating materials 4S & W / 0112TW / AX0N, 29089.1120 32 -------------- (Please read first Note on the back then fill out this page) Order --------- line! This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 523745

V. Description of the invention (33) The perforations are lined conformally to fill, and the non-isotropic etching process is used to remove some insulating materials, leaving a through-hole with a diameter of D3. Structure 1 300 uses this technique to form an ion conductor with a cross-sectional area as small as about 10 nanometers connected to electrodes 1310 and 1 320. 14-17 disclose another embodiment of the present invention, wherein the cross-sectional area of the ion conductor and the electrode interface is relatively small. Structure 1 400, as shown in FIG. 14, includes electrodes 1410 and 1420 and an ion conductor 1 430. The structure 1400 is formed in a similar manner to the structure 700, except that the ionic conductor raw material is precipitated at an equiangular angle, such as chemical vapor deposition or physical vapor deposition, into the groove, and the groove is not filled with the ionic conductor material. The structure 1 500 is similar to the structure 1 400, except that the ion conductor 1530 is formed by etching a part of the ion conductor 1430, and thus the perforations 1 540 are formed through the electrode 1410. The structure 1 600 is similar to the structure 1500 and is formed by isotropically precipitating the ionic conductor material as described above, and then the ionic conductor material is removed from the surface of the insulating substance 1 450 before the electrode 1 420 material is precipitated. Finally, the structure 1 700 can enter the trench formed in the insulating material 1 450 (eg, using angled precipitation and or shadowing techniques) by selective precipitation of the ionic conductor 1 73 0 material. Partially formed, the excess ion conductor raw material on the surface of the insulator 1 450 is removed, and the electrode 1 720 is formed on the insulator and is connected to the ion conductor 1 73 0. Figures 18 and 19 illustrate another embodiment of the present invention, in which the pillars or walls in the trench are a 4S & W / 0112TW / AX0N, 29089.1120 paper used to reduce the interface between the ion conductor and one or more electrodes. Standards are applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the note on the back? Matters before filling out this page) · Intellectual Property Bureau of the Ministry of Economic Affairs Printed Clothing for Consumer Cooperatives 523745 A7 B7 Intellectual Property of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Bureau π V. Description of the invention (cross-sectional area. The structure 1 800, as shown in FIG. 18, includes electrodes 18 10 and 1 820 and an ion conductor 1 83 0 formed in an insulating layer 1 840. In addition, The structure 1800 includes an insulating pillar 1850 formed in a trench of the layer 1 840 (eg, an insulating substance for forming the layer 1 840). The structure 1 800 can be formed by the aforementioned shadow deposition technique. The structure 1900 is similar to the structure 1 800, Except for structure 1 900, which includes incomplete pillars 1 950 and ion conductors 1 930, this ion conductor fills the remainder of the aforementioned groove. Figure 20 illustrates another structure 2000 according to the present invention. Structure 2000 includes electrodes 2010 and 20 20 and the ionic conductor 2030 formed in the insulating layer 2040. The structure 2000 is formed using a non-isotropic or non-isotropic compound and an isotropic etching process to form a sharp perforation. The ionic conductor 2030 uses the aforementioned Technology is formed in the trench. Figures 21-24 illustrate a programmable device according to another embodiment of the invention. The structure illustrated in Figures 21-24 includes a floating electrode that allows multi-bit information to be stored in a single programmable device The structure 2100 includes a first electrode 2110, a second floating electrode 2120, a third electrode 2130, and an ion conductor portion 2140 and 2150, all of which can be formed on the substrate or can be formed wholly or partially in the perforation as described above. Although the structure 2 100 is illustrated in a vertical structure, it can be formed in a horizontal structure like the structure 1100. According to the viewpoint of the present invention, the first and third electrodes are inert electrodes, and the second electrode is an oxidizable electrode. The first and third electrodes are formed of oxidizable electrode materials, and the second electrode, the floating electrode, is formed of inert electrode materials. 4S & W / 0112TW / AXON, 29089.1120 34 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the note on the back before filling in this page) d · line · 523745

i. Description of the invention (^). In either case, the structure includes two "half units" ', each of which can be regarded as a programmable device as described above with reference to FIG. Each half unit is preferably assembled with a different resistance from the other half unit when both units are in the wiped state at the same time. When the floating electrode 2120 is formed of an oxidizable electrode material, the bits of the data can be stored as follows. The overall impedance of structure 2100 is approximately equal to the resistance of 2140 and 2150. When no electrodeposition is formed in any part, this high-resistance state can be represented by the state 00. When the voltage passes through the structure 2100, the electrode 2130 is positive relative to the electrode 2110, and the bias voltage used is greater than the critical potential required to form an electroprecipitation at 2140. An electroprecipitation 2160 will flow from the electrode 2110 through the conductor portion 2140 to the floating electrode. 2120, as shown in FIG. Because 2150 is under the opposite bias condition, it will not help the growth of the electrodeposition '. In this case, an electrodeposition will not be formed in the conductor portion 2150. The growth of the electrodeposition will change the impedance of 2140 from Zτ to ZΓ, so changing the entire impedance of the structure 2100 will be represented by the state 01. The current standard for the formation of the electroprecipitate 2160 should be chosen so that it is low enough to allow the electroprecipitate to decompose when a sufficient reverse bias is applied. The third state can be formed by reversing the bias across the electrodes 2110 and 2130, so most of the voltage drop occurs when the high-resistance ion conductor portion 2150 and the electrodeposition 2170 begin to form, as shown in Figure 23, without causing Electroprecipitation 2160 decomposes. The impedance of the part 2150 is changed from Z2 to Z2 ', and the entire impedance of the structure 2100 is Z]' plus Z2 ', which will be represented by state 11. When two and a half units are in the writing state, electrodeposition 4S & W / 0112TW / AXON, 29089.1120 35 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) Please read the notes on the back first thing

I Printing of clothing by employees' cooperatives in the Intellectual Property Bureau of the Ministry of Economic Affairs

523745 A7 B7 objects 2160 and / or 2170 are broken down by using a sufficient bias across one or two and a half units. The electrodeposition 2170 can be wiped away, for example, by sufficiently biasing the electrode 2130 and the electrode 2110, it can indicate the state 0o. The four possible states, in addition to the current limit of the formation state, are depicted in Table 1. Please read the note on the back of the page. Polarity current standard Z Half unit 1 Z half unit 2 Skin state matters 1 Then start near zero Zl Z2 00 Fill in 2 Up + Down-Low Z 5 5 Z2 01 Write 3 Up-Down + Low Zl5 Z2, 11 Page 4 Up-Down + High Zl Z2, 10 螓 Table IIIII Order Printed by the Intellectual Property Bureau Employees Consumer Cooperatives of the Ministry of Economic Affairs Printed using a low current standard bias to make the electroprecipitate 2150 grow in part 2140 can structure 2100 from State 10 changes to state 11. Similarly, using a relatively high current standard bias to decompose the electroprecipitate 2170 can change the structure 2100 from state 11 to state 01, so the upper electrode 2130 is positively related to the lower electrode 2110. Finally, using a short current pulse to thermally decompose the electroprecipitate 2160 can turn the structure 2100 back to the state OO. Using a sufficiently high current can cause the electroprecipitate to locally heat. This will increase the metal concentration by half a unit, but this excess metal can be removed from the unit with electricity and reduced to the floating electrode using electroplating. This sequence is summarized in Table 2. 4S & W / 0112TW / AXON, 29089.1120 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 36 523745 Α7 Factory_B7 V. Description of the invention) Serial number Polarity current standard Z half unit 1 Z half Units 2 status 値 4 current status-Zl z2, 10 5 up + down-low ZΓ Z2, 11 6 up + down-high Zl? Z2 01 n β-7 up + down-hot Zl Z2 00 > kj / 3 There are also other possible writing and erasing sequences printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (such as the definition of other different states represented by the impedance of half a unit). For example, depending on the selected write polarity, from state 00 to state 01 or state 10 is possible. Likewise, it is possible to go from state 11 to state 10 or state 01. Using sufficiently high and short current pulses (in either direction) to simultaneously decompose the electroprecipitate in two and a half units, it is also possible to change the state from state 11 to state 〇〇. In addition to storing information in digital form, the Structure 2100 can also be used as an interference-resistant, low-energy anti-fuse element for professional programmable gate arrays (FPGAs) and professional structured circuits and systems. Most physical anti-fuse technologies require large amounts of current and voltage to make a permanent connection. The need for such a high-energy state transition stimulus is generally considered to help it reduce the possibility that anti-melt accidentally makes an electrical interference state connection. However, the use of local resistance and a large amount of current on the chip represents a major problem. All the elements on the programmable circuit are generally arranged in size, and the high energy consumption reduces the battery life of the portable system. 25-29 illustrate that according to another embodiment of the present invention, a multi-function programmable device structure includes a common electrode (for example, devices share a common anode or cathode). It is beneficial to form a structure that shares a common electrode with multiple structures, as this structure allows higher density units to be formed over a specified range of substrate surfaces. 4S & W / 0112TW / AXON, 29089.1120 37 Please refer to the note on the back side to fill in this page) • • Line. Too large paper size applies Chinese National Standard (CNS) A4 specification X? Q7 replacement, J > *-a 523745

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 31. Description of the Invention (3¾) Figures 25 and 26 illustrate a structure 2500, which has a horizontal structure and common electrodes. Structure 2500 includes an electrical connector 2510, which is coupled to a common surface electrode 2520, electrodes 2530 and 2540, and ionic conductor portions 2550 and 2560 disposed on an insulating layer 2170. The structure 2500 can be used to form word lines and bit lines as described above. A column of electrodes (eg, anodes) is coupled to the conductor 2510, and a column of opposite bias electrodes (eg, cathodes) operates vertically as electrodes 2520. A conductive plug is formed from any suitable conductive material and can be used to couple the electrode 2520 with the conductor 2510. Although the horizontal structure is shown, the common electrode structure may be formed by a vertical structure according to this embodiment. Figures 27 and 28 reveal that additional structures 2700 and 2800 have a common electrode for use by two or more devices. Structures 2700 and 2800 include a common electrode, electrodes 2720 and 2725, ion conductors are 2730, 2735 and 2830, 2835, and insulation layers 2740 and 2750 °. Structures 2700 and 2800 can be formed using the above-mentioned technologies of FIGS. 15 and 16, for example, using Isotropic precipitation of ionic conductor material in a groove in a dielectric layer. According to another embodiment of the present invention, a directional precipitation can be used to form a structure similar to the structure 1700. Structures 2700 and 2800 each have two programmable devices including a common electrode 2710 and an ion conductor (e.g., conductor 273 5) and another electrode (e.g., electrode 2725). The dielectric material 2750 is an insulating material that does not interfere with the growth of surface electrodepositions, such as stone oxidants, sand nitrides, and the like. FIG. 29 reveals that a structure 2900 includes a plurality of programmable devices 2902-29 16 formed near the common electrode 2920. Device 4S & W / 0112TW / AXON, 29089.1120 38 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ϋ ϋ * 1 ϋ ϋ ϋ ϋ n ϋ n II ϋ · 1 ϋ I · ϋ ϋ 1 一 St · ϋ 1 -ϋ ϋ ϋ H ϋ I 1 ·· ϋ (Please read the precautions on the back before filling out this page) 523745 ^ __ I _ ^ _ Printed by A7 B7 Invention Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ’ 3 ^) Each of 2902-291 6 can be formed using the method described in FIG. 21. The embodiment shown in FIG. 29 shows that each of the electrodes 29 3 0-293 6 and 29 3 8-29 44 can be coupled with the common electrode 2920 in a vertical direction, so that the electrode 2920 forms a bit line and the electrodes 2930-2936 and the electrode 293 8-2944 forms a character line. The structure 2900 can be operated and programmed in a similar manner to the structure 2100 described above. According to another embodiment of the present invention, a programmable structure or device stores information in a manner that stores a charge opposite to the growth of an electroprecipitate. The current capacity of the structure or device changes depending on the bias voltage applied across the device electrodes, so that positively charged ions move to one of the electrodes. If the applied bias voltage is less than the write threshold voltage, there will be no short circuit between the electrodes. Ion movement causes a change in the current capacity of the structure. When the bias used is removed, metal ions tend to diffuse from the electrode or the barrier near the electrode. However, the interface between the ionic conductor and the barrier is often flawed and includes the disadvantage of suppressing ions. Therefore, at least part of the ions remain on or near the barrier and ion conductor interface. If the writing voltage is reversed, the ions will be properly scattered from the interface. The programmable structure according to the present invention can be used in many applications, otherwise it is necessary to use conventional techniques such as electronic erasable read-only memory, flash memory or dynamic random access memory. The advantages provided by the present invention over current memory technologies include, among other things, lower production costs and the ability to use flexible manufacturing technologies, which are easily adaptable to a variety of different applications. The programmable structure of the present invention is particularly advantageous for applications where cost is a primary consideration, such as smart cards and electronic inventory labels 4S & W / 0112TW / AXON, 29089.1120. This paper standard is applicable to Chinese national standards (CNS ) A4 size (210 X 297 mm) • I ϋ ϋ ϋ ϋ ϋ .1 ϋ n H ϋ n 1 I (Please read the notes on the back before filling out this page).-! Line · 523745 Intellectual Property Bureau, Ministry of Economic Affairs Printed by employees' consumer cooperatives A7 B7 V. Description of invention (knowledge) (electronic inventory tag). Moreover, the ability to form memory directly on plastic cards is the main advantage in these applications, as it is often not possible for other semiconductor memory types. Furthermore, according to the stylized structure of the present invention, the memory elements can be arranged to be smaller than a few square microns in proportion to the size, and the moving part in the device is smaller than j microns. It offers significant advantages over traditional semiconductor technology, where each device and its associated connections occupy tens of square micrometers. Therefore, the device of the present invention requires relatively low energy and does not need to be replenished. So these devices are very suitable for portable device applications. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention, but not to limit the present invention. For example, when a stylized structure is suitably connected to a stylized memory device as described above, the present invention is not limited: the structure of the present invention can be suitably used for a programmable active or inert device in a microelectronic circuit. Moreover, although only certain devices are illustrated, such as including bumpers, barriers, or transistor parts, any of these parts can be added to the device of the present invention. Anyone who is familiar with this & persimmon 'can be changed and retouched within the scope without departing from the spirit of the invention'. Therefore, the scope of protection of the present invention shall be determined by the scope of the attached patent application. . 4S & W / 0112TW / AXON, 29089.1120 40 This paper size applies to China National Standard (CNS) A4 (21〇χ 297 mm) '-------- Order --------- Line -(Please read the notes on the back before filling this page)

Claims (1)

523745 A8 B8 C8 D8 6. Application scope of patent 1. A microelectronic programmable structure, including: an ion conductor, the ion conduction system is composed of an ion conductive substance and a plurality of conductive ions; an oxidizable electrode, the oxidizable shop And close to the ion conductor; and an inert electrode close to the ion conductor. 2. The microelectronic programmable structure described in item 1 of the scope of patent application, further comprising a buffer layer, the buffer layer being between the oxidizable electrode and the ion conductor. 3. The microelectronic programmable structure as described in item 2 of the scope of patent application, wherein the buffer layer includes a raw material, which is composed of AgxO, AgxS, AgxSe, AgxTe, where X 彐 2, AgyI, where y 彐 1 , Selected from the group consisting of Cul2, CuO, CuS, CuSe, CuTe, Ge 02, and Si02. 4. The microelectronic programmable structure as described in item 1 of the patent application scope, wherein the inert electrode comprises platinum. 5. The microelectronic programmable structure described in item 1 of the scope of the patent application, wherein the oxidizable electrode includes a raw material selected from the group consisting of a transition metal sulfide and a transition metal selenite. 6. The microelectronic programmable structure according to item 5 of the scope of patent application, wherein the oxidizable electrode further comprises an embedded silver. 7. The microelectronic programmable structure according to item 5 of the scope of patent application, wherein the oxidizable electrode comprises TaS2. 4S & W / 0112TW / AX0N, 29089.1120 41 This paper size is applicable to Chinese National Standard (CNS) Α4 size (210X 297 mm) (Please read the precautions on the back before filling this page), staff of the Intellectual Property Bureau of the 1T line economy Printed by the Consumer Cooperative 523745 A8 B8 C8 D8 6. Scope of patent application 8. The microelectronic programmable structure described in item 1 of the scope of patent application, wherein the oxidizable electrode contains silver iodide. 9. The microelectronic programmable structure as described in item 8 of the patent application scope, wherein the oxidizable electrode contains additional silver. 10. The microelectronic programmable structure as described in item 1 of the scope of patent application, wherein the ionic conductor includes a solid solvent, the solid solvent is composed of AsxSi_x-Ag, GcxSc] _X-Ag? GexSi-x-Ag, AsxSi- x-Cu, GexSei-x-Cu, GexSi.x — Cu are selected from the group, where x ranges from about 0.1 to 0.5. 11. The programmable structure of microelectronics as described in item 10 of the scope of patent application, wherein the ionic conductor contains a charged substance. 12. The microelectronic programmable structure according to item 11 of the scope of patent application, wherein the charge substance contains a dielectric and appears in the ion conductor in a large amount up to 50%. 13. The microelectronic programmable structure as described in item 11 of the scope of patent application, wherein the charge substance contains a dielectric and appears in the ion conductor in a large amount up to 5 percent. I4. The microelectronic programmable structure as described in item 11 of the scope of patent application, wherein the charge substance comprises silver. 15. The microelectronic programmable structure according to item 1 of the scope of patent application, wherein the ionic conductor comprises a glass containing a composite of GeO.i7Se〇.83 to GemSem. 4S & W / 0112TW / AXON, 29089.1120 42 (Please read the precautions on the back before filling out this page) Printed by the Ministry of Economic Affairs, Smart Finance 4 Bureau, Consumer Cooperatives, Printed by the Ministry of Economics, Smart Property Bureau, Employee Consumer Cooperatives, Printed 523745 A8 B8 C8 D8 VI. Scope of patent application 16. The microelectronic programmable structure described in item 15 of the scope of patent application, wherein the ionic conductor further contains up to 34 percent silver. 17. The microelectronic programmable structure described in item 1 of the scope of patent application, further comprising a transistor which is in contact with one of the oxidizable electrode or the inert electrode. 18. The microelectronic programmable structure described in item 1 of the scope of patent application, further comprising a bipolar vacuum tube that is in contact with one of the oxidizable electrode or the inert electrode. 19. The microelectronic programmable structure according to item 1 of the scope of patent application, wherein the ion conductor is formed in a perforation on a layer of insulating material. 20. The microelectronic programmable structure described in item 19 of the scope of patent application, further comprising a bipolar vacuum tube formed in the perforation. 21. The microelectronic programmable structure according to item 19 of the scope of patent application, wherein the ion conductor contacts a portion of the inert electrode around the ion conductor. 22. The microelectronic programmable structure according to item 21 of the scope of patent application, wherein the ion conductor contacts the inclined portion of the inert electrode around the ion conductor. 23. The microelectronic programmable structure according to item 1 of the scope of the patent application, wherein the inert electrode, the oxidizable electrode and the ion conductor are formed on a surface of the insulating raw material layer. 4S & W / 0112TW / AXON, 29089.1120 43 This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back before filling this page) 523745 A8 B8 C8 D8 VI. Patent application scope 24. The microelectronic programmable structure as described in item 1 of the patent application scope, wherein the ion conductor is formed in a perforation of a first layer of insulating raw material layer, and the programmable structure is It further includes a second insulating material formed in the through hole. 25. The microelectronic programmable structure described in item 1 of the scope of patent application, wherein the ion guide system is formed along a side wall of a perforation, wherein the perforation is formed in the insulating layer. 26. The microelectronic programmable structure according to item 1 of the scope of the patent application, wherein the ion conduction system is formed in an inclined perforation in the insulating layer. 27. The microelectronic programmable structure as described in item 1 of the scope of the patent application, further comprising a fence layer between the inert electrode and the ionic conductor. 28. The microelectronic programmable structure described in item 27 of the scope of the patent application, wherein the fence layer includes a conductive material. 29. The microelectronic programmable structure described in item 27 of the scope of patent application, wherein the fence layer includes an insulating material. 30. The microelectronic programmable structure according to item 1 of the scope of patent application, wherein the surface area of the inert electrode connected to the ion conductor is smaller than the surface area of the oxidizable electrode connected to the ion conductor. 31. The microelectronic programmable structure described in item 1 of the scope of patent application, wherein the interface between the inert electrode and the ionic conductor is rough. 32. —Multi-programmable microelectronic devices, including: 4S & W / 0112TW / AXON, 29089.1120 44 This paper size applies to China National Standard (CNS) Α4 specification (210 × 29? Mm) (Please read the note on the back first Please fill in this page for further information), 1T printed by the Consumer Finance Cooperative of the 4th Bureau of Wisdom and Finance of the Ministry of Economic Affairs, printed 523745, printed by A8 B8, C8 D8, the Consumer Cooperative of the Wisdom Finance of the Ministry of Economics, A8 B8, C8 D8. A second electrode of two types; a first ion conductor material of a first resistance, the first ion conductor material being interposed between the first electrode and the second electrode; a first electrode of a third electrode; and a A second ionic conductor material of the second resistor is interposed between the second electrode and the third electrode. 33. The multi-unit programmable microelectronic device as described in item 32 of the scope of patent application, wherein the first and third electrodes contain an inert electrode raw material, and the second electrode contains an oxidizable electrode raw material. 34. The multi-unit programmable microelectronic device according to item 32 of the scope of patent application, wherein the first and third electrodes contain an oxidizable electrode material, and the second electrode contains an inert electrode material. 35. A multi-unit programmable microelectronic device comprising: a plurality of first-type electrodes; a plurality of second-type electrodes; and a plurality of ionic conductor structures, wherein at least one ionic conductor material is interposed between one first-type electrode and one Between the second type of electrodes, and wherein the plurality of first type electrodes are electrically coupled together. 36. The multi-unit programmable microelectronic device as described in item 35 of the scope of patent application, wherein the plurality of first-type electrodes contain oxidizable electrode raw materials. 4S & W / 0112TW / AX0N, 29089.1120 45 This paper size applies to China National Standard (CNS) A4 (210X29 * 7 mm) (Please read the precautions on the back before filling this page) 523745 A8 B8 C8 D8 VI. Patent application scope 37. The multi-unit programmable microelectronic device described in item 35 of the patent application scope, wherein the plurality of first-type electrodes contain inert electrode materials. 38. The multi-unit programmable microelectronic device described in item 35 of the scope of patent application, wherein at least a part of the ionic conductor structure is formed in a perforation in an insulating raw material layer. 39. The multi-unit programmable microelectronic device as described in item 35 of the scope of patent application, wherein at least a part of the ionic conductor structure is formed on a surface of the insulating raw material layer. 40. A method for forming a programmable microelectronic device, including the following steps: providing a substrate; forming a first type of electrode raw material, the first electrode raw material is disposed on the substrate; forming an insulating layer, the insulating layer is disposed on Forming a first electrode raw material layer; forming a perforation through the insulation layer and the first type electrode raw material layer; precipitating the ion conductor material into the perforation; and forming a second type electrode on the ion conductor material. 4 1. The method according to claim 40, wherein the step of forming a perforation includes isotropically etching the insulating layer. 42. The method as described in claim 40, wherein the step of forming the perforation includes anisotropically etching the insulating layer. 4S & W / 0112TW / AXON, 29089.1120 46 This paper size applies to Chinese National Standard (CNS) A4 specification (210X 297 mm) (please read the precautions on the back before filling this page), staff of 1T Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative 523745 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. Application for a patent 43. The method described in item 40 of the patent application, wherein the step of forming the perforation includes isotropic etching This first type of electrode raw material layer. 44. The method as described in claim 40, wherein the step of forming the perforation includes non-equally etching the first electrode material layer. 45. The method of claim 40, further comprising applying a bias voltage across the first-type electrode raw material and the second-type electrode raw material to process the concentration of the ion-conducting conductive material. 46. The method as described in item 40 of the scope of patent application, further comprising applying a bias across the first type of electrode material and the second type of electrode material to process some of the first type electrode material and the second type of electrode material Conductive material for electrode material. 47. The method of claim 40, wherein the step of immersing the ionic conductor material includes precipitating germanium on a surface and chemically reacting with H2Se. 48. The method as described in item 40 of the scope of patent application, wherein the step of Shen Wei's ionic conductor raw material comprises precipitating arsenic on a surface and chemically reacting with H2Se. 49. The method as described in claim 40, wherein the step of sinking the ionic conductor material includes precipitating germanium on a surface and chemically reacting with H2S. 4S & W / 0112TW / AXON, 29089.1120 47 This paper size is applicable to China National Standard (CNS) A4 (210X29 * 7mm) (Please read the precautions on the back before filling this page) 523745 A8 B8 C8 D8 Wisdom of the Ministry of Economic Affairs. 4 Printed by the Consumers' Cooperative of the 6th Bureau. 6. Application for patent scope 50. The method described in item 40 of the patent scope, wherein the step of precipitating the ionic conductor raw material includes arsenic precipitation in a On the surface and chemical reaction with H2s. 51 · —A method for forming a programmable microelectronic device, including the following steps: forming an ion conductor structure on a substrate; precipitating an electrode raw material layer on an ion conductor structure; and imitating the electrode raw material layer to form an electrode and the electrode Ionic conductor structure connection. 52. The method of claim 51, wherein the step of forming an ionic conductor structure includes precipitating germanium on a surface and chemically reacting with H2Se. 53. A method for forming an electronic device, comprising the following steps: forming a first electrode on a surface of a substrate; stimulating a first insulating layer on a surface of a first electrode; forming a perforation on a first insulating layer Precipitating a second insulating material on a portion of the perforation; precipitating an ion conductor material on a portion of the perforation; and forming a second electrode on the ion conductor. 54. The method as described in claim 53 in the scope of patent application, wherein the step of sinking an ion conductor raw material includes the step of precipitating the ion conductor raw material in the perforation formed by the second insulating raw material. 4S & W / 0112TW / AXON, 29089.1120 This paper size applies to Chinese National Standard (CNS) A4 (210X 297 mm) (Please read the precautions on the back before filling this page) Cooperatives print A8 B8 C8 D8 6. Scope of patent application 55. The method described in item 53 of the scope of patent application, wherein the step of precipitating a second insulating raw material includes the use of directional precipitation technology. 56. The method as described in item 53 of the scope of the patent application, wherein the step of precipitating an ionic conductor raw material comprises forming an isometric layer of the ionic conductor raw material. 57. The method according to claim 53, further comprising the step of removing a portion of the ion conductor material from the surface of the first insulating material. 58. A method for forming a multi-unit programmable device, including the following steps: forming a first electrode on a substrate surface; forming a first ion conductor portion, the first ion portion being distributed on the first electrode; forming A second electrode is disposed on the first ion conductor portion; a second ion conductor portion is formed on the second electrode portion; and a third electrode is formed on the first ion conductor portion; Three electrodes are disposed on the second ion conductor portion. 59. A method for forming a glass composition, including the following steps: Select an ampoule; Rinse the ampoule with hydrofluoric acid; (Please read the precautions on the back before filling this page) Thread 4S & W / 0112TW / AXON, 29089.1120 49 This paper size is applicable to Chinese National Standard (CNS) A4 (210X29 * 7 mm) ABCD 523745 6. Application for patent scope Dry the ampoule, at about 120 ° C for about 24 to 120 hours. Empty the ampoule; heat the ampoule until the ampoule turns red; charge the ampoule; heat the ampoule to a temperature lower than the melting point of the glass constituent elements; quickly raise the temperature to a temperature above the glass liquid at a rate of about 0.5 degrees per minute A temperature of about 50 ° C; and slowly shake the glass composition for about 6 hours at a rate of about 20 times per minute. (Please read the precautions on the back before filling out this page), 1S printed by 4T & W / 0112TW / AXON, 29089.1120 50, printed by the Consumer Cooperatives of the Smart Finance 4 Bureau of the Ministry of Economics of the 1T Line This paper is in accordance with China National Standard (CNS) Α4 specifications ( 210 × 297 mm)