TW521539B - A plasma reactor with multiple microwave sources - Google Patents

Abstract

Using a parabolic reflector focuses the energy of the multiple microwave sources together. By the geographic arrangement among the antennas, reflector and reaction chamber, the microwave energy shall be allocated to form an uniform, large, high energy area for plasma generation. In the reaction chamber with low vacuum, the focused energy excites the process gas to plasma or radicals. Defused by gradient or guided by magnetic flux, the plasma shall be transfer to wafer and the manufacturing processes like dry clearance or plasma enhanced chemical vapor deposition (PE-CVD) be conducted. This innovation proposes a simpler and cheaper way to generate the plasma with large area. It shall be useful for the applications of semiconductor manufacturing.

Description

521539 A7 B7 V. Description of the invention (1/5) Printed by the Ministry of Economic Affairs, the Ministry of Economic Affairs, and printed by the Money Cooperative Consumer Cooperative. 1 Background of the invention 1) Background Plasma machines are widely used, such as dry ashing or plasma enhanced chemical evaporation (PE -CVD) and other semiconductor applications. Their typical operating principle is that in a low-vacuum reaction tank, high-density microwave energy excites the injected process gas to generate plasma and free radicals. Due to the gradient diffusion or the guidance of magnetic field lines, the plasma contacts the activated process gas with the wafer, forming a variety of semiconductor process applications. There are different types of microwave joining methods, such as inductively coupled plasma (ICP), spiral wave plasma (HWP) and other types of plasma machines; there are also electronic cyclotron resonance (ECR) using high magnetic fields to increase the freeness to generate plasma . A variety of plasma generation technologies balance the performance of the device according to the simplicity, operating cost, and precision of the device and the needs of the application, allowing each technology to have its own positioning space. ^ CR requires a large electromagnet. In addition to energy consumption, it also requires complicated auxiliary devices such as cooling. The system is more complex but can be operated at low pressure and precisely controlled. For example, ICP and HWP are simple devices. The key to their technology is to effectively accumulate sufficient microwave energy to build and maintain a stable plasma, and to meet the needs of large-scale wafer processing. This case proposes innovative ideas for a plasma source that efficiently gathers microwave energy and provides large-scale processing applications. 2) Description of the existing architecture, as follows: The reaction tank (116) is evacuated to a vacuum using a vacuum pump (111). The microwave source (12) is processed by the transmission and matching device ⑴3), and is fed into the reaction tank (116) by the antenna (114) through the dielectric window (1, 5). In the reaction tank (U6), the process gas (117) that is introduced is freed or formed into free radicals by microwave energy. The plasma area (118) is diffused or guided by the auxiliary magnetic field (119) to the crystal. The circle (120) 'provides the processing required for wafer (121) dry ashing or pE_CVD. If necessary, an appropriate bias (122) can be applied to the wafer base (121). Different processing processes are made by injecting gas (1Π), base (121), bias (122), etc. {please feed in first. Please note the f item on the back and fill in this page}. Very few. Order # · ， 1 = · s--i -i-im ftf— A7 B7 Ministry of Finance and Economics% * Finance. 4 bureaus Mx & iif cooperation Du printed 521539 5. Description of the invention (2/5), each unit is controlled by the program control device (123) and Integrate it; and politics generates plasma as its core. For microwave energy, if it is gathered with a high skinning line (114), the range of the distribution and plasma area (118) is limited, and it can only be used for small-size wafer applications; ^ If the microwave power output is increased, the microwave source has high energy The design and system reliability of the dedicated input and matcher (113) are equally challenging, while the high-power microwave source (112) is not easy to obtain or increases. 2 Summary of the invention < 1 > The problem to be solved is effective in the tank Generate large-area, high-density microwave energy and control its uniformity to generate plasma output. (2 > Characteristics of the invention: For example, Figure 2 is a cross-sectional view of a symmetrical three-dimensional device about the axis (36), in which two microwave sources are used for illustration. The functions of each part in Figure 2 are U2, respectively. 13) Processing, the initial gathering of each piece, sending two shots)) i ^ plane (31) is a metal or a parabolic surface structure of effective reflection material reflects and condenses the microwave energy, and reacts through the dielectric window (15) In the low-pressure reaction tank of tank f, the aforementioned high-density microwave energy process operating gas (17) is freed or converted into free radicals to form eight (21) plus an appropriate bias (22) to control the process. The different "Yue II" consist of gas (17), base (21) bias (22) and other parameters, each

Order HI n I— n If · -f ----- I- -1. -HI m {Read the note on the back and read this page before filling in this page) 521539 A7 B? V. Description of the invention (4/5 ) Ministry of Economic Affairs% Huicai 4 Bureau M Industrial Cooperative Cooperative Printed Brief Description Figure 1 Block Diagram of Existing Single Microwave Source Plasma Generation System Figure 2 Block Diagram of Multi-Microwave Source Plasma Generation System Element Symbol Description: Figure 1 Existing Unit Microwave source plasma generation system block diagram 111 Vacuum pump 112 Microwave source 113 Transmission and matching device 114 Antenna 115 Dielectric window 116 Reaction tank s 117 Process operation gas 118 Plasma area 119 Auxiliary magnetic field 120 Wafer 121 Wafer base 122 Biaser '123 Program Controller Figure 2. Block Diagram of Plasma Generation System with Multiple Microwave Sources 11 Vacuum Pump 12 Microwave Source 13 Transmission and Matcher 14 Antenna 15 Dielectric Window 16 Reaction Tank 17 Process Operating Gas 18 Plasma Zone 19 Auxiliary magnetic field for 20 wafers, please read the back note first note #fill off this

521539 A7 B7 V. Description of the invention (5/5) 21 Wafer base 22 Biaser 31 Reflective surface 32 Reflective surface focus 33 Antenna main axis pointing 34 Antenna 3db inner edge pointing 35 Antenna 3db outer edge pointing 36 Reflecting surface axis 37 Miscellaneous Stray microwave energy 38 Microwave absorbing structure 39 Stray microwave energy loss path (please read the precautions on the back before filling this page) Printed on paper by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ,, λ starts from ', 1 n〆

Claims (1)

521539 A8 A8 B8 C8 f 丨 Vv repair /, and Shenjing patent scope (1/1) 1. Two types of plasma generating devices with multiple microwave sources, which have the following characteristics: complex, smart wave energy sources, each transmitted With the matcher, the antenna is used to collect the micro $, the amount is initially collected, and each is roughly referred to as p |, which is the axis of the parallel parabolic surface. The energy of each microwave source is reflected by the parabolic surface and concentrated in a region of the punctiform area of the parabolic surface. Feed into the vacuum reaction tank through the dielectric window; …… σσ high 3 microwave energy desorbs or activates the multiple process gases sent to the reaction tank by the buches to generate a plasma for the wafer on the wafer base as a potential processing station Required; ^ microwave absorbing material or structure to reduce the diffusion of microwave energy; the number of auxiliary magnets, placed on the periphery of the above reaction tank, the plasma to the wafer, and control the uniformity of the plasma / magnetic Knife Green calls the plasma generating device described in the first item of the patent application scope. Near the focal point of the reaction surface of the basin, according to the microwave energy concentration range. Hard rolling body source, with separate control Flow control device. 4. The plasma generating device described above has a wafer base with a position adjustment and biasing device to control the plasma generating device described in the first item of the scope of the patent application. Iron can be an appropriate type of electromagnet. Or permanent magnet f-auxiliary magnet 6. As described in the first item of the patent application, the plasma production can be adjusted, and the position of the focal point is adjusted on the second surface. The line = makes the energy of each microwave accumulate or feed in sections. To form a large area of culvert and control the uniformity of its distribution. 7. The source of electropolymerization as described in the first item of the scope of patent application, which can be concentrated or dispersed solid or vacuum tubes, etc.