TW518488B - Method for design and layout of integrated circuits - Google Patents
Method for design and layout of integrated circuits Download PDFInfo
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- TW518488B TW518488B TW090116396A TW90116396A TW518488B TW 518488 B TW518488 B TW 518488B TW 090116396 A TW090116396 A TW 090116396A TW 90116396 A TW90116396 A TW 90116396A TW 518488 B TW518488 B TW 518488B
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- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/32—Circuit design at the digital level
- G06F30/33—Design verification, e.g. functional simulation or model checking
- G06F30/3308—Design verification, e.g. functional simulation or model checking using simulation
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/39—Circuit design at the physical level
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F30/30—Circuit design
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Abstract
Description
518488 A7 B7518488 A7 B7
發明範疇 局的方法有關、 本發明與一種改良積體電路之設計及佈 尤其,本發明與超大型積體電路有關。 發明背景 由於積體電路(ICs)應 '、八置祈的與不同白 使用所產生之刺激,造成積體電路越來越複雜,甚The invention relates to the method of the bureau. The invention relates to the design and layout of an improved integrated circuit. In particular, the invention relates to a very large integrated circuit. BACKGROUND OF THE INVENTION As integrated circuits (ICs) should be stimulated by the use of Hachichi ’s and different applications, integrated circuits have become more and more complex,
裝 單獨小的半導體晶片包括十數億個裝 至未 夏因而4致超大3 積體電路(VLSIs)之设计及佈局,較過去兮简〇〇 , μ間早積體電路j 發複雜與耗時。鑒於所費不貲的超大型積鳢電路生產與廷 試用的小量實際作業之電路,故設計及佈局方法目前採月 電月包辅助没计(C A D)與電腦模擬,以評估實於電 性能。 超大型積體電路之設計包括3項主要步驟。第一項步驟 係設計師建立電路示意圖。第二項步驟係以類比,數Z, 或混合信號,確定無誤的邏輯活動與時序。通常,重複此 兩項步驟之後,才開始第三項步驟—佈局工作。 目前次微米超大型積體電路設計最大問題之一係寄生元 件之影響,如導線(即電路線跡)之電阻與電容越來越重要, 必須慎重考量。 路徑中信號延遲源於内部延遲,其與邏輯閘極延遲有 關’其4曰路徑中與έ亥延遲為 問極延遲”,“導線延遲’’則 與夺,載彳§號的連接器(導線)有關。老式,小密度的技術, 即.3 5微来設計之積體電路’信號延遲大部份源於閘極延 遲,約佔典型路徑總延遲之8 0%。惟因高密度整合而大幅 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 518488 A7 B7 五、發明説明(2 改憂此情況。尚密度技術,即.1 8微米設計之積體電路, ^號延遲大部份源於導線延遲,約佔總延遲之7 〇 %。此說 明計算寄生元件之重要,同時應儘早將之納入模擬。通 吊,寄生元件(即供匯流排導線)先經設計師估算並示於電路 圖中。惟,此法受限,因進行佈局時,無法考量所有的寄 生元件。佈局步驟之後,才得自佈局資料中擷取,並將之 納入模擬(逆向註釋)。此設計流程主要問題在於保持設計與 寄生資料庫之間的一致程度。 超大型·積體電路,如高密度,高速之動態隨機存取記憶 體(DRAM),得分解為複數個區塊,或次組(sub_ division),以改良作業效率。區塊予以設計成同時作業, 各自獨立。鑒於區塊空間緊密,以及信號脈衝上升時間極 短(即20微微秒左右),故須特別減少寄生處理的負面效 應,否則該區塊的運作,可能不利地影響其他區塊之運作 與時序’而動態隨機存取記憶體將無法最有效率運作或達 最佳速率。本發明即說明此問題。 發明概要 依據本發明一實施例,一種改良的方法,提供積體電路 之該設計與佈局,尤其是超大型積體電路(VLSIs),如高密 度,高速之動態隨機存取記憶體(DRAMs),其具有一複數 個區塊以增加作業效率。該區塊予以分別地設計與佈局, 採用電腦辅助設計與電腦模擬,然後合併成一整體之佈 局。一電腦辅助設計與電腦模擬方法之整合部份,係於饰 局時同時地辨識寄生元件。當設計及佈局每一區塊時,寄 ~ 5 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公茇]-- '1- 518488The installation of individual small semiconductor wafers includes billions of them. The design and layout of 4 large and 3 integrated circuits (VLSIs) that are installed in the summer, are simpler than in the past. The early integrated circuits in μ are complicated and time-consuming. . In view of the costly production of very large-scale integrated circuits and trial operation of small-scale practical circuits, the design and layout methods currently adopt monthly electricity supplementary calculation (CA) and computer simulations to evaluate actual electrical performance. The design of a very large integrated circuit includes three main steps. The first step is for the designer to create a schematic circuit diagram. The second step is to use analog, number Z, or mixed signals to determine error-free logic activities and timing. Usually, after repeating these two steps, the third step—layout work—is started. At present, one of the biggest problems in the design of submicron ultra-large integrated circuits is the influence of parasitic elements, such as the resistance and capacitance of wires (ie, circuit traces) are becoming more and more important, and must be carefully considered. The signal delay in the path is derived from the internal delay, which is related to the logic gate delay. 'The delay in the 4th path is called the delay of the pole.' The "wire delay" is related to the connector (wire )related. Old-fashioned, low-density technology, that is, integrated circuits designed with 3.5 micron signals, mostly derives from the gate delay, which accounts for about 80% of the typical path total delay. However, due to high-density integration, this paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 518488 A7 B7 V. Description of the invention (2 Remedy this situation. Density technology, ie. 1.8 micron design For integrated circuits, most of the ^ delays are derived from wire delays, which account for about 70% of the total delay. This shows the importance of calculating parasitic elements, and it should be included in the simulation as soon as possible. The conductors are estimated by the designer and shown in the circuit diagram. However, this method is limited, because it is impossible to consider all parasitic components during layout. After the layout step, it can be extracted from the layout data and incorporated into it. Simulation (reverse annotation). The main problem in this design process is to maintain the consistency between the design and the parasitic database. Very large and integrated circuits, such as high-density, high-speed dynamic random access memory (DRAM), must be decomposed into Multiple blocks, or sub_divisions, to improve operating efficiency. Blocks are designed to work simultaneously and independently, given the tight block space and the rise time of signal pulses Short (that is, about 20 picoseconds), so the negative effects of parasitic processing must be particularly reduced, otherwise the operation of this block may adversely affect the operation and timing of other blocks' and dynamic random access memory will not be most efficient The operation or reach the optimal rate. The present invention illustrates this problem. Summary of the Invention According to an embodiment of the present invention, an improved method for providing the design and layout of integrated circuits, especially very large integrated circuits (VLSIs), such as High-density, high-speed dynamic random access memory (DRAMs), which has a plurality of blocks to increase operating efficiency. The blocks are designed and arranged separately, using computer-aided design and computer simulation, and then combined into a whole Layout. An integrated part of computer-aided design and computer simulation methods, which is used to identify parasitic elements at the same time when decorating. When designing and layout each block, send ~ 5-This paper standard applies to China National Standard (CNS) A4 size (21 × 297 mm)-'1- 518488
生兀件即予以指認並且由這些元件寄生齡資訊(即每一团 塊中寄生元件之計算值)立即與連續地提供所有區塊。這邊 寄生擷取資訊,以初步及持續進行的方式,立即地傳送至 -中央貪料庫。如此每_區塊及所有區塊混合之該設計及 佈局又惠於有關所有寄生元件混合資訊之獲得。最後, 該總時間,其用於該完整晶片之該設計,佈局,與電腦模 擬可減父,並且該晶片之該速率及運作達最佳程度。 自第方法立場觀之,該敘述係指一種一具有寄生元 件之積體電路之設計及佈局之方法。該方法包括下列步The raw parts are identified and all blocks are provided immediately and continuously by the parasitic age information of these elements (ie the calculated values of the parasitic elements in each block). Here, the parasitic capture information is transmitted to the Central Corruption Repository in an initial and continuous manner. In this way, the design and layout of each block and all block mixes benefit the acquisition of information about all parasitic element mixes. Finally, the total time, which is used for the design, layout, and computer simulation of the complete chip, can be reduced, and the speed and operation of the chip are optimal. From a method standpoint, the narrative refers to a method of designing and arranging integrated circuits with parasitic elements. The method includes the following steps
裝 驟·製作該積體電路各部份的初步設計;藉由電腦模擬評 估该没計;一旦可自該初步設計與模擬步驟取得,即進行 擷取寄生元件資訊,並將該擷取資訊儲存於一該積體電路 所有部份共用的資料庫中;持續逆向註釋儲存於該資料庫 中的資訊,以立即嘉惠該設計、模擬及後續步驟;成功模 擬區塊設計前後,使用該積體電路各部份的寄生擷取資訊Installation · Make a preliminary design of each part of the integrated circuit; evaluate it by computer simulation; once it can be obtained from the preliminary design and simulation steps, retrieve the parasitic component information and store the retrieved information In a database shared by all parts of the integrated circuit; continuously reverse-annotate the information stored in the database to immediately benefit the design, simulation and subsequent steps; use the integrated body before and after successfully simulating the block design Parasitic capture information for various parts of the circuit
製作佈局;以及使用該寄生擷取資訊製作該積體電路的全 晶片佈局並模擬之。 自一第二方法立場觀之,該敘述係指一種超大型積體電 路(VLSI)之設計及佈局之方法,該超大型積體電路具有複 數個區塊並具有多個寄生元件。該方法包括下列步驟:採 用分頭並行的方式初步設計每一區塊;初步模擬每一區塊 設計;同時進行擷取於每一區塊中所辨識之寄生元件的資 訊’並將以此方式所獲得的資訊儲存於一所有區塊所共用 的資料庫中;以持續進行的方式對每一該區塊逆向註釋該 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 518488Making a layout; and using the parasitic capture information to make a full-chip layout of the integrated circuit and simulate it. From a second method standpoint, the narrative refers to a method for the design and layout of a very large integrated circuit (VLSI), which has a plurality of blocks and multiple parasitic elements. The method includes the following steps: a preliminary design of each block in a parallel and parallel manner; a preliminary simulation of the design of each block; the simultaneous retrieval of the information of the parasitic elements identified in each block 'will be used in this way The obtained information is stored in a database shared by all the blocks; each block is reverse-annotated in a continuous manner. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm). 518488
寄生擷取貢訊,以嘉惠於該初步設計、模擬及後續步驟; 成功模擬區塊設計後,使用該寄生擷取資訊製作每一區塊 設計的佈局;使用該寄生擷取資訊製作一全晶片佈局;以 及使用該等寄生元件的逆向註釋來模擬該全晶片佈局,以 實現最佳化晶片設計。 自一第三方法立場觀之,該敘述係指一種超大型積體電 路(VLSI)之設計及佈局之方法,該超大型積體電路包括一 具有寬度小於0.2微米且具有顯著影響信號時序之多個寄 生元件的動態隨機存取記憶體(DRAM)。該方法包括下列 步驟:製作該超大型積體電路各部份的初步設計;藉由電 腦杈擬評估該設計;進行擷取該等寄生元件以作為初步設 計與模擬步驟的一部份,並將該擷取資訊儲存於一該超大 型積體電路所有部份共用的資料庫中;持續逆向註釋儲存 於該貝料庫中的育訊,以最佳化該初步設計、模擬及後續 步驟,使該專寄生元件的影響降至最低限度;成功模擬之 後,使用該超大型積體電路各部份的寄生擷取資訊製作佈 局,以及使用該寄生擷取資訊製作該超大型積體電路的全 晶片佈局並模擬之,使該超大型積體電路運作達到最佳程 度。 自一第四方法立場觀之,本發明係指動態隨機存取記憶 體(DRAM)之設計及佈局的方法,該動態隨機存取記憶體 具有複數個區塊且具有顯著影響信號時序的多個寄生元 件。該方法包括下列步驟:採用分頭並行的方式初步設計 每一區塊;初步模擬每一區塊設計;進行擷取於每一區塊 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 裝Parasitic capture tribute to benefit from the initial design, simulation and subsequent steps; After successfully simulating the block design, use the parasitic capture information to make the layout of each block design; use the parasitic capture information to make a complete Wafer layout; and back-annotation of the parasitic elements to simulate the full wafer layout to optimize the wafer design. From a third method standpoint, the narrative refers to a method for the design and layout of a very large integrated circuit (VLSI). The very large integrated circuit includes a circuit with a width of less than 0.2 microns and a significant influence on signal timing. Parasitic elements of dynamic random access memory (DRAM). The method includes the following steps: making a preliminary design of each part of the very large integrated circuit; planning to evaluate the design by a computer; extracting the parasitic elements as part of the preliminary design and simulation steps, and The captured information is stored in a database common to all parts of the ultra-large integrated circuit; the annotations stored in the shell database are continuously reverse-annotated to optimize the preliminary design, simulation, and subsequent steps, so that The effect of the special parasitic component is minimized; after successful simulation, the layout is made using the parasitic capture information of each part of the super large integrated circuit, and the full chip of the super large integrated circuit is manufactured using the parasitic captured information. Layout and simulate it to make the super large integrated circuit operate optimally. From the perspective of a fourth method, the present invention refers to a method for designing and arranging a dynamic random access memory (DRAM). The dynamic random access memory has a plurality of blocks and has a plurality of significant influences on signal timing. Parasitic element. The method includes the following steps: preliminary design of each block in a parallel and parallel manner; preliminary simulation of the design of each block; extraction from each block; the paper size applies the Chinese National Standard (CNS) A4 specification (21 °). x 297 mm)
k 518488 A7 B7k 518488 A7 B7
五、發明説明GV. Invention Description G
中所辨識之寄生元件的眘却 ^ .. 70件的貝訊’亚將以此方式所獲得的資訊 儲存於—所有區塊所共料資料庫中;以持續進行的方式 料-該區塊逆向註釋該寄生#|取資訊,以最佳化該初步 8又计、核擬及後續步驟’使該等寄生元件的影響降至最低 限度;成功模擬區塊設計後,使用該寄生擷取資訊製作每 -區塊設計的佈局;使用該寄生擷取資訊製作一全晶片佈 裝 局;以及使用該等寄生元件的逆向註釋來模擬該全晶片佈 局,以實現最佳化晶片設計。 訂Of the parasitic elements identified in the ^ .. 70 pieces of Bexun 'ya will store the information obtained in this way-in a database of all blocks; in a continuous way-the block Reverse annotate the parasitic # | Get information to optimize the preliminary calculation, verification, and subsequent steps to minimize the impact of these parasitic elements; use the parasitic to capture information after successfully simulating the block design Fabricate the layout of each-block design; use the parasitic capture information to make a full-chip layout; and use the back annotations of the parasitic elements to simulate the full-chip layout to optimize the chip design. Order
自一第五方法立場觀之,纟發明係指一種超大型積體電 路(JLSI)之^及佈局之方法,該超大型積體電路包括多 個高密度動態隨機存取記憶體,每個動態隨機存取記憶體 均具有複數個區塊1具有主要源於導線延遲而㈣極延遲 的信號延遲。該方法包括下列步驟:採用分頭並行的方式 初步a又计每一區塊,初步模擬每一區塊設計;持續逐一區 塊操取寄生元件資訊,並將該擷取資訊儲存於一所有區塊 所共用的資料庫中;以持續進行的方式對每一該區塊逆向 註釋該寄生擷取資訊,以嘉惠於該初步設計、模擬及後續 步驟;如果發現缺點,則在一區塊中重複該初步設計與模 擬步驟;成功模擬區塊設計後,使用該寄生擷取資訊製作 每一區塊設計的佈局;使用該寄生擷取資訊製作一全晶片 佈局;以及使用該等寄生元件的逆向註釋來模擬該全晶片 佈局,使泫等寄生元件對該超大型積體電路運作的影響降 至最低限度。 自一裝置立場觀之,本發明係指一改良的積體電路或超From the perspective of a fifth method, the invention refers to a method and layout of a very large integrated circuit (JLSI). The very large integrated circuit includes a plurality of high-density dynamic random access memories, each dynamic The random access memory has a plurality of blocks 1 each having a signal delay mainly due to a wire delay and a pole delay. The method includes the following steps: using a head-to-head parallel method to initially count each block and initially simulate the design of each block; continue to manipulate the parasitic component information one by one, and store the captured information in all areas In the database shared by the blocks; annotate the parasitic capture information for each block in a continuous manner to benefit the preliminary design, simulation and subsequent steps; if defects are found, then in a block Repeat the preliminary design and simulation steps; after successfully simulating the block design, use the parasitic capture information to make a layout for each block design; use the parasitic capture information to make a full-chip layout; and use the parasitic components inversely Annotate to simulate the full-chip layout to minimize the impact of parasitic elements such as plutonium on the operation of very large integrated circuits. From a device standpoint, the present invention refers to an improved integrated circuit or superconductor.
A7 B7 五、發明説明 大型積體電路,其包括一動態隨機存取記憶 述任一方法製成。 體,其根據上 其將 本發明一較佳之貢獻係結合許多優點之全部貢獻 獲自下述說明並配合所附之圖例與申請專利範圍貝 圖示簡單說明 ,以設計,佈 其具有複數個 丢兄明佈局中之 圖1係一示意圖,顯示一先前技藝之方法 局,與電腦模擬一超大型積體電路(VLSI), 區塊; 圖2 A係一示意圖,顯示圖1中放大之電路 寄生’電阻與電容; 圖2B係一示意圖,說明寄生電容之相對尺寸,其自圖2八 電路中之一層交連至鄰近層; 圖3A係一示意圖,顯示圖2八電路,說明該電路一層中 導線佈局之改變; 圖3B係一示意圖,說明寄生電容之相對尺寸,其自圖3八 電路中之一層交連至鄰近層,此寄生電容較圖2]3之寄生電 容大;以及 圖4係一示意圖,顯示一方法,根據本發明,提供設計, 佈局,與電腦模擬一超大型積體電路,其具有複數個區 塊0 發明之詳細說明 參照圖1,一種先前技藝之方法之示意圖1 〇,係供設計, 佈局,與電腦模擬一超大型積體電路(VLSI),其具有複數 個電路區塊12(分別以“A”,“B”,至“η”區別),並且整 本紙張尺度適用中國國家標準(CNS) Α4規格(210X 297公釐) 518488 A7 B7 五、發明説明(7 ) 合於一完整電路晶片’未示於圖中。圖丨〇所示之設計流程 始於第一步驟’供母一各別區塊12加入一電路示意圖,示 於標示“示意圖加入’’的各別方塊1 4。於是每一區塊1 2 (即 A,B…η)設計師利用一電腦(未示於圖中)模擬電路邏輯 及時序,以評估區塊12所代表之各別電路,模擬作業示於 標示“模擬’’的方塊1 6。若該設計滿意,如標示“ 〇 κ,,的 方塊18,則該設計進行佈局階段,示於方塊2〇。若模擬方 塊1 6發現缺點,該設計則須修正與重新加入,如自方塊工8 至方塊1 4之回轉線2 2。 一旦各別區塊1 2之佈局完全滿意,則該設計於一整體晶 片上,示於方塊2 4 (全晶片佈局)進行所有區塊丨2 (即a, Β... η)之完整電路佈局。全晶片佈局完成後,即進行整體 電路之寄生擷取(示於方塊26)其由電腦計算寄生電阻與電 容值。這些計算值即加入寄生資料庫,示於方塊28。整體 設計及佈局至此,根據示意圖1〇,先前技藝方法仍然無法 有效的考量寄生元件與其對全晶片電路運作之總影響。如 後敘之詳述,寄生元件對各別的區塊丨2之運作與全晶片電 路之性此及速率有重大且不利的影響。除非局部作業,示 於區塊12旁的虛線(寄生擷取)方塊3〇,虛線(局部資料庫) 方塊32,虛線(逆向註釋)方塊34,係由工程師一設計却所 佈局之特殊區塊12 ;於全晶片佈局方塊24之前,不同區塊 12(A)的設計師無法藉示意圖1〇考量寄生元件混合與互動 之影響。此為該方法嚴重的限制,其造成後續全晶片及各 別區塊運作與時序達最佳程度的困難。 I_____ - 10 - 本紙張尺度_関家鮮丨21GX297_ 518488A7 B7 V. Description of the Invention A large integrated circuit including a dynamic random access memory is made by any of the methods described above. It is based on the above, which combines a good contribution of the present invention with all the advantages. The full contribution is obtained from the following description, and is accompanied by the attached legend and the scope of the patent application. It is simply illustrated for design. Brother 1 in the layout is a schematic diagram showing a prior art method bureau and computer simulation of a very large integrated circuit (VLSI), block; Figure 2 A is a schematic diagram showing the enlarged circuit parasitics in Figure 1 'Resistance and capacitance; Figure 2B is a schematic diagram illustrating the relative size of the parasitic capacitance, which is interconnected from one layer in the circuit of Figure 2 to an adjacent layer; Figure 3A is a schematic diagram showing the circuit of Figure 28, illustrating the wires in one layer of the circuit Layout changes; Figure 3B is a schematic diagram illustrating the relative size of the parasitic capacitance, which is interconnected from one layer in the circuit of Figure 38 to an adjacent layer, which is larger than the parasitic capacitance of Figure 2] 3; and Figure 4 is a schematic diagram Shows a method, according to the present invention, providing design, layout, and computer simulation of a very large integrated circuit with a plurality of blocks. Detailed description of the invention with reference to FIG. A schematic diagram of a prior art method 10 is for design, layout, and computer simulation of a very large integrated circuit (VLSI), which has a plurality of circuit blocks 12 (represented by "A", "B", to " η "difference), and the entire paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 518488 A7 B7 5. Description of the invention (7) Combined into a complete circuit chip 'not shown in the figure. The design flow shown in Fig. 丨 begins with the first step 'for the mother-to-respective block 12 to add a schematic circuit diagram, which is shown in the respective blocks marked "Schematic Addition' 1 4. So each block 1 2 ( That is, A, B ... η) The designer uses a computer (not shown in the figure) to simulate the logic and timing of the circuit to evaluate the individual circuits represented by block 12. The simulation operation is shown in the box labeled "Simulation" 1 6 . If the design is satisfactory, such as box 18 marked “0κ,”, the design is in the layout stage, as shown in box 20. If the simulation of box 16 finds shortcomings, the design must be modified and re-added, such as from the box workers. 8 to the turning line 2 of block 14 2. Once the layout of the individual blocks 12 is completely satisfactory, the design is on an overall chip, shown in block 2 4 (full chip layout) for all blocks 丨 2 (ie a, Β ... η) complete circuit layout. After the full chip layout is completed, the parasitic capture of the entire circuit is performed (shown in box 26). The computer calculates the parasitic resistance and capacitance. These calculated values are added to the parasitic data. The library is shown in block 28. At this point in the overall design and layout, according to the schematic diagram 10, the prior art method still cannot effectively consider the total impact of parasitic elements and their operation on the full-chip circuit. As described in detail below, parasitic elements The operation of block 丨 2 has a significant and adverse effect on the nature and speed of the full-chip circuit. Unless it is locally operated, the dotted line (parasitic extraction) box 30 shown next to block 12 and the dotted line (local database)Block 32, dashed line (reverse note) Box 34, is a special block 12 designed by the engineer but laid out; before the full-chip layout block 24, designers of different blocks 12 (A) cannot consider the parasitics with the schematic diagram 10 The influence of component mixing and interaction. This is a serious limitation of this method, which causes the subsequent full-chip and individual block operation and timing to reach the optimal level of difficulty. I_____-10-This paper size_ 关 家 鲜 丨 21GX297_ 518488
加入資料於寄生資料庫(方塊2 8)後,該寄生值連同全晶 片佈局(方塊2 4)進入“逆向註釋,,步驟方塊3 6,以修正全 晶片的設計及/或佈局,由是全晶片的電腦模擬3 8始得完 成。模擬顯示所須的修正及改變,則回傳至每一各別區塊 1 2之輸入,如虛線3 9,於是改變的設計予以重覆。如此設 計的過程一再重覆,直到全晶片的性能達最佳程度。After adding data to the parasitic database (block 2 8), the parasitic value together with the full chip layout (block 2 4) enters "reverse annotation," step 36, to modify the design and / or layout of the full chip. The computer simulation of the chip 38 can be completed. The corrections and changes required for the simulation display are transmitted back to the input of each individual block 12, such as the dotted line 39, so the changed design is repeated. The process is repeated again and again until the performance of the full chip is optimal.
裝 參照圖2A,其顯示半導體晶片42上一超大型積體電路 40的小部份(如虛線所示)之放大示意平面圖。電路4〇具一 較低之、纟巴緣層4 4 (僅示部份),其包含一線跡,或連接 A 、B 兩點之“導線” 4 6。絕緣層4 4與導線4 6上另一絕 緣層48(僅示部份),其包含一導線5〇,因其較導線46高一 層,故以虛線表示。導線5 0跨越導線4 6的部份,示以小圓 圈52,表示兩線之間存有寄生電容。 訂Referring to FIG. 2A, it shows an enlarged schematic plan view of a small portion (shown in dotted lines) of a very large integrated circuit 40 on a semiconductor wafer 42. The circuit 40 has a lower, sloping edge layer 4 4 (only part shown), which includes a stitch, or a “wire” 4 6 connecting the two points A and B. The insulating layer 44 and the other insulating layer 48 (only a part shown) on the conductive wire 46 include a conductive wire 50. Since it is one layer higher than the conductive wire 46, it is indicated by a dotted line. The portion of the lead 50 that crosses the lead 46 is shown as a small circle 52, indicating that there is a parasitic capacitance between the two wires. Order
參照圖2 B,其顯不導線4 6與導線5 0之間,連接之電容器 54代表兩線之間寄生電容52(圖2 a)。依寄生電容54之大 小,絕緣層44上超大型積體電路40之該部份,而影響電路 4 0上層4 8部份之輕重。設計與佈局各別區塊丨2時(圖丨)顯然 夺多寄生元件因而形成,如導線46與50的寄生電阻與寄生 電容’並且非常可能以不同與無法調整方法改變。如此, 一工程師正在佈局一各別區塊1 2 (即區塊A)或許決定該導 線,如導線5 0,正好在其佈局之區塊,其寄生電阻值太 大。該工程師或許改變該導線之構型以減少其電阻值,然 此改變亦影響鄰近的區塊12(即區塊B)。這種佈局改變能導 致區塊1 2與整個超大型積體電路40運作之嚴重且無法預測 _____ - 11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Referring to FIG. 2B, the capacitor 54 is shown between the lead 46 and the lead 50, and the capacitor 54 represents the parasitic capacitance 52 between the two wires (FIG. 2a). Depending on the size of the parasitic capacitance 54, the part of the super-large integrated circuit 40 on the insulating layer 44 affects the weight of the upper part 48 of the circuit 40. When designing and arranging the individual blocks 2 (Figure 丨), it is obvious that multiple parasitic elements are formed, such as the parasitic resistance and capacitance of the wires 46 and 50, and it is very likely to be changed by different and unadjustable methods. In this way, an engineer is laying out a separate block 12 (ie, block A) and may decide that the lead, such as lead 50, is in the block in which it is laid out, and its parasitic resistance is too large. The engineer may change the configuration of the wire to reduce its resistance, but this change also affects the neighboring block 12 (i.e. block B). This layout change can lead to the serious and unpredictable operation of block 12 and the entire ultra-large integrated circuit 40. _____-11-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
的改變。 參照圖3A,其顯示與電路4〇(圖2A)類似之電路示意圖 56。電路不意圖56具有一導線58係導線5〇之重新構型 (圖2A);導線58顯著加寬故降低導線5〇之寄生電阻 值。然,如整個區域60,導線46與58之間的寄生電容值顯 著地大於導線46與50之間的寄生電容值,如圖2八中小圓圈 52所示。 參照圖3B,其顯示導線46與58之間連接的電容器Q代表 整個區域·60中各線之間寄生電容(圖3A)。如前所述,因整 個區域60大於區域52(圖2A),電容器62亦顯著地大於電容 器54。因而導致電路5613A中,連接a、b兩點之導線46 上的信號延遲增加。圖2A,2B,3A與3B強調寄生元件所 造成的問題,並於先前技藝設計與佈局超大型積體方法 時,如示意圖1 0之變化。 /參照圖4,其顯不—方法之電路示意圖7(),根據本發明, 係供電腦輔助設計,佈局,與電腦模擬一超大型積體電 路,,’其具有複數個電路區塊72(分別以區塊“丨”,' 區塊 一…區塊η㉟另])’並且整合形成一積體電路(ic, 未示於圖中)。-超大型積體電路是積體電路⑽的一種樣 式。圖7G所示之設計流程始於第_步驟,供每_各別區塊 72加入—電路示意圖,示於標示“示意圖加入,,的各別方 塊74。於是每—區塊72(即區塊1,2, ... n)設計師利用一 電腦(未示於圖中)模擬電路邏輯及時序,以評估區塊72所 代表之各別電路,模擬作業示於標示“模擬,,的%。 518488Change. Referring to Fig. 3A, a schematic circuit diagram 56 similar to circuit 40 (Fig. 2A) is shown. The circuit is not intended to have a reconfiguration of a lead 58 that is a lead 50 (Fig. 2A); the lead 58 is significantly widened to reduce the parasitic resistance of the lead 50. However, for the entire area 60, the parasitic capacitance value between the wires 46 and 58 is significantly larger than the parasitic capacitance value between the wires 46 and 50, as shown by the small circle 52 in FIG. 2. Referring to Fig. 3B, it is shown that the capacitor Q connected between the leads 46 and 58 represents the parasitic capacitance between the lines in the entire area 60 (Fig. 3A). As mentioned earlier, since the entire area 60 is larger than the area 52 (FIG. 2A), the capacitor 62 is also significantly larger than the capacitor 54. As a result, in the circuit 5613A, the signal delay on the wire 46 connecting the two points a and b is increased. Figures 2A, 2B, 3A, and 3B emphasize the problems caused by parasitic elements. When the previous technology design and layout of large-scale integrated methods, as shown in Figure 10 changes. / Refer to Figure 4, which shows the schematic diagram of the method 7 (), according to the present invention, for computer-aided design, layout, and computer simulation of a very large integrated circuit, 'It has a plurality of circuit blocks 72 ( Take blocks "丨", 'block one ... block n㉟other])' and integrate to form an integrated circuit (ic, not shown in the figure). -Very large integrated circuits are a type of integrated circuits. The design flow shown in FIG. 7G starts at step _ for each _ individual block 72 to be added-a schematic circuit diagram is shown in each block 74 labeled "Schematic Addition," so each-block 72 (ie block 1,2, ... n) The designer uses a computer (not shown) to simulate the logic and timing of the circuit to evaluate the individual circuits represented by block 72. The simulation operation is shown in the% of simulation, . 518488
當這些初始步驟與同時作業時,寄生it件值之“逆向註釋” 即立刻由每-區塊72巾’連接方塊74與76共同連線取 資訊回饋環路提供’而當整個設計流程進行於任—或所有 區塊72時’該等寄生元件值即獲自不同之區塊&此有關 寄生元件之連續與廣範圍的資訊回饋,詳如後述。設計階 段早期能獲得這些資訊與圖70所示之整個方法成功與否有 重大關係與價值。 若於“模擬,,步驟之後,標示於方塊%,該設計滿意, 如(“OK”)方塊80標示“YES”的輸出,則該階段,示於“寄 生擷取佈局’’的方塊82。如此即使於晶片佈局之前,仍可受 心於寄生擷取。若模擬方塊7 6發現缺點,即方塊8 〇的輸 出為N〇’’,該設計則須修正與重新加入,如自方塊8 〇至方 塊7 4之回轉線8 4。同時地,各別區塊7 2中任何寄生擷取資 訊事先經過改變,亦由環路7 8回饋至設計流程。 進行全晶片佈局步驟之前,示於“寄生擷取全晶片佈局,, 方塊86,有關所有區塊72之寄生元件饋至一共同或廣範圍 的寄生資料庫(方塊90),如自方塊82之箭頭92。源於各別 區塊7 2之所有寄生擷取資訊(以及其中任何改變)同時地自 資料庫90,經“逆向註釋,,(方塊94)至回饋環路78,並立即 地饋至單獨之區塊7 2,如上所述。如此即使於全佈局之 前,這些各別區塊72之設計與佈局,仍可受惠於清楚寄生 元件之存在及何者疏忽地或不利地影響區塊或整個超大型 積體電路。根據本發明提供電路示意圖70之方法運作,設 計師能於設計與佈局早期,即避免或減少寄生元件之影 _______-13 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)When these initial steps are performed at the same time, the "reverse annotation" of the parasitic it values is immediately provided by the 72-per-block 'connection block 74 and 76 to jointly connect the information feedback loop provided' and when the entire design process is carried out in Any—or all blocks at 720 'The values of these parasitic elements are obtained from different blocks & this continuous and wide-ranging information feedback on parasitic elements is described in detail below. The availability of this information early in the design phase has a significant relationship and value to the success of the overall approach shown in Figure 70. If after the "simulation," step is marked in the box%, the design is satisfactory, such as ("OK"), the output of the box 80 is marked "YES", then this stage is shown in the box 82 of the "generate capture layout '". This allows you to worry about parasitic capture even before the chip layout. If the simulation of block 76 finds a disadvantage, that is, the output of block 80 is No., the design must be modified and re-added, such as the line of revolution 84 from block 80 to block 74. At the same time, any parasitic extraction information in the respective blocks 72 has been changed in advance, and it is also fed back to the design flow by the loop 78. Before performing the full-chip layout step, shown in "Parasitic Capture Full-Chip Layout," box 86, the parasitic elements of all blocks 72 are fed to a common or wide-range parasitic database (box 90), as in Arrow 92. All parasitic extraction information (and any changes therein) originating from the respective block 72 are simultaneously retrieved from the database 90, "reversely annotated, (block 94) to the feedback loop 78, and immediately feed To separate block 72, as described above. Thus, even before the full layout, the design and layout of these individual blocks 72 can still benefit from being aware of the presence of parasitic elements and inadvertently or adversely affecting the block or the entire super-large integrated circuit. According to the method of the circuit diagram 70 provided by the present invention, the designer can avoid or reduce the influence of parasitic components in the early stage of design and layout. _______- 13-This paper size applies to China National Standard (CNS) A4 (210 X 297) (Centimeter)
裝 訂Binding
518488518488
響。如此,因單獨的減少寄生電阻而疏忽地造成更大之寄 ί 生電容,如圖2A,2B,3A與3B所示,於發生之前即予以 ; 避免。 ; 母一各別區塊72之佈局(方塊82)混合於全晶片佈局(方 ! 塊86),如箭頭96。源於全晶片佈局(方塊86)之寄生擷取亦 : 匯入寄生資料庫90,如箭頭98,如此可應用所有寄生擷取 ; 貝訊之逆向註釋(方塊94),如箭頭1〇〇至全晶片模擬之最後 φ 步驟(,塊102)。於全晶片模擬之前,隨時提供所有寄生元 |ring. In this way, a larger parasitic capacitance is inadvertently caused due to the reduction of the parasitic resistance alone, as shown in Figures 2A, 2B, 3A and 3B. Avoid it before it occurs. ; The layout of the mother-individual block 72 (block 82) is mixed with the full-chip layout (square! Block 86), such as arrow 96. Parasitic extraction from full-chip layout (box 86): Import parasitic database 90, such as arrow 98, so that all parasitic acquisitions can be applied; Reverse Annotation (box 94) of Beixun, such as arrow 100 to The last φ step of the full-chip simulation (block 102). Provide all parasitics at any time before full-chip simulation |
件之貝訊·,對超大型積體電路與其組件區塊之最佳程度有 I 莫大助孤此亦縮短工程師於超大型積體電路之設計,佈 ; 局’與晶片佈局等不同步驟作業與重覆作業的時間。 f 上述之呪明僅為解釋,不得限制本發明。熟諳此蓺者可 : 逕行改變與修正所述之方法,並不偏離所述專财i範® : 之本發明精神與範圍製作。尤其,本發明並不限於特定A r 寸或種類之超大型積體電路,或—具有特絲目之區塊, | 本發明亦不受限於所述之相同順序與步驟的數目。 · -- - 14 - 本紙張尺度適财目®家鮮The most important thing is that the optimal degree of the ultra-large integrated circuit and its component blocks is very important. This also shortens the engineer's design and layout of the ultra-large integrated circuit. Time to repeat the job. f The above description is for explanation only and shall not limit the present invention. Those who are familiar with this can: change and modify the methods described without departing from the spirit and scope of the present invention. In particular, the present invention is not limited to very large integrated circuits of a specific Ar size or type, or—blocks with Tesselmes, and the present invention is not limited to the same order and number of steps described. ·--14-This paper is suitable for household use ®
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TWI457778B (en) * | 2008-04-23 | 2014-10-21 | Synopsys Inc | Method and apparatus for computing a detailed routability estimation |
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US7137088B2 (en) | 2004-05-04 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | System and method for determining signal coupling coefficients for lines |
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US5629860A (en) * | 1994-05-16 | 1997-05-13 | Motorola, Inc. | Method for determining timing delays associated with placement and routing of an integrated circuit |
HUP0301274A2 (en) * | 1998-09-30 | 2003-08-28 | Cadence Design Systems | Block based design methodology |
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TWI457778B (en) * | 2008-04-23 | 2014-10-21 | Synopsys Inc | Method and apparatus for computing a detailed routability estimation |
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