五、發明說明（l) 5 -1發明領域： 問^本ί明是有關於一種製造一電容器的方法，特別是有 節種包含無線電波波頻電漿（radio fre(luency P asma’ Rf plasma)清洗步驟，以形成一電容器的方法。 5 - 2發明背景： 之介二ΐ 2 2件电谷器通常是由兩個電極及位於二電極間 ==同這種結ΐ普遍應用在許多半導』 的製程通常如下所=及機存取圮體（DRAM)。這種電容器 義圖案並蝕刻以形^银I先，形成一導體層於底材上，定 電層於下電極之上^。Ϊ容器的下電極。接下來，形成一介 成電容器。 最後以另一個導體層覆蓋介電層即形 電谷器的電容昔〆 · 極間的距離以及介j=pacitance)與電極的面積、兩電 以增加電容器的；；！的：電係數有_。已有數種方法： 層的厚度，以及使用=^括增加電極的面積、減少介♦ 的材料至少包括多θ /、有鬲介電常數之介電質材料。電= 電極的電容器 =矽、多晶矽化金屬及金屬。由於; MM)電容器的下電巴^層—金屬（nietal —insulat〇r — m 乂 Γ甩極多以金屬層形成。 ai，V. Description of the invention (l) 5 -1 Field of the invention: The present invention relates to a method for manufacturing a capacitor, and in particular, there are sections that include radio fre (luency P asma 'Rf plasma). ) A cleaning step to form a capacitor. 5-2 BACKGROUND OF THE INVENTION: Zinji Erji 2 2 pieces of electrical valleyr are usually composed of two electrodes and located between the two electrodes. The process of conducting is usually as follows: and the machine access memory (DRAM). This capacitor is patterned and etched to form a silver layer. First, a conductor layer is formed on the substrate, and a fixed layer is formed on the lower electrode. ΪThe lower electrode of the container. Next, a dielectric capacitor is formed. Finally, the dielectric layer, which is the capacitor valley shaper, is covered with another conductive layer. The distance between the electrodes and the area of the dielectric and the electrode, Two electricity to increase the capacitor;;! : Electric coefficient has _. There are several methods: the thickness of the layer, and the use of materials that increase the area of the electrode and reduce the dielectric include at least a multi-theta / dielectric material with a dielectric constant. Electricity = Electrode Capacitors = Silicon, Polysilicon Metals and Metals. MM) The lower layer of a capacitor—metal (nietal —insulat〇r — m 乂 Γ) is mostly formed by a metal layer. Ai,
515026 五、發明說明（2) 但由於，金屬電極與介電層表面上有原始氧化層（ native oxide )或金屬氧化層的存在，會造成高漏電流（ large leakage current)以及不穩電壓係數（unstable voltage coefficient(Vc)，以致造成電容量偏差（ capacitance variation)且使電容器性能非如設計時所預 期。因此，有必要除去這些氧化物以增進電容器性能。 5 - 3發明目的及概述 含一無線電波波頻電 屬電極表面上的原始 成的電容器可以減少 务明的主要目的是提出一形成電容器的方法，其包 漿（RF plasma)清洗步驟，以處理金 氧化物或金屬氧化物，經由此方法形 漏電流並獲得穩定的電壓係數。/ ' 根據以上所述目 ，其包含下列步驟。 形成電容器的下電極 。該電漿清洗歩騾古 子氣體作為清、、先二 氣體，再將二ί氣體 订肘此電繁、、太 後形成一介電二 導體層覆蓋該介電;： 法的電容器。 層 的，本發明提供一形成電容器的方泠 首先，形成第一導體層於底材上，= 。其次，以RF電漿清洗該下電 法是使用i少含氟原+氣體或含= 、’然後活化此清洗氣體形成電漿清洗 洗氣體與電容器之電極表面接觸。缺 洗過的該下電極之上。最後形成二 以作為電容器之上電極，即形成本方515026 5. Description of the invention (2) However, due to the existence of native oxide or metal oxide on the surface of the metal electrode and the dielectric layer, large leakage currents and unstable voltage coefficients ( The unstable voltage coefficient (Vc) causes capacitance variation (capacitance variation) and the capacitor performance is not as expected at the time of design. Therefore, it is necessary to remove these oxides to improve the capacitor performance. 5-3 Purpose and Summary of the Invention The original capacitor on the surface of the radio frequency electric electrode can reduce the main purpose of the method is to propose a method for forming a capacitor. The RF plasma cleaning step is used to process gold oxide or metal oxide. The method is to form a leakage current and obtain a stable voltage coefficient. / 'According to the above purpose, it includes the following steps. The lower electrode of the capacitor is formed. The plasma is used to clean the Guzko gas as the first, second, and second gases. ί Gas elbow, the electric fan, queen queen forms a dielectric two conductor layer to cover the dielectric; First, the present invention provides a method for forming a capacitor. First, a first conductor layer is formed on a substrate, =. Second, the RF plasma cleaning method is used to use i less fluorine-containing source + gas or containing =, ' Then activate this cleaning gas to form a plasma cleaning and cleaning gas that is in contact with the electrode surface of the capacitor. Above the lower electrode that has not been washed. Finally, two are formed to serve as the upper electrode of the capacitor, which forms the side
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在本發明提供的另一實施例中，其形成電 包含下列步驟。首先，形成第一導體層於底材上Γ蚨方法 疋義圖案並餘刻該第一導體層以形成電容器的㊉後， 後以RF電漿清洗該下電極表面。其次，形成一八=^。然 洗過的該下電極之上。之後，形成第二導體層尸=二於清 層。最後定義圖案並蝕刻該第二導體層以作‘：：介電 電極。即形成本方法的電容器。 兒谷為之上 5 - 4發明詳細說明： 本發明的較佳實施例將詳細討論如 乂太 m 丄 w ^ ^ ^ 〜η μ 卿閃蹄如设。會 > 述使用本發明的-特定範例，並非用“；：：：用 個電溶 時製 制。杯 體較f 的技_ 特別限 少含氟 此清決 容器之 在之後的敛述中，雖铁0 W、+、女ETB 的方法，徊θ @ :雖然疋拙述有關製造單— 凌，但疋顯然可知，也是可以在—早 :個電容器。在此發明中，底材 ㊁材士同 ^ S的半導體底材均可使用。一般而士頡亚未限 :二本發明中包含許多在傳統技藝中：盾：半導 二衫、蝕刻、以及化學氣相沈積法等，二為热知 :T再詳述其内容。電漿清洗步驟方法f此並無 氣體或含氯原子氣體作為 疋使用至 體形成電裝清洗氣體，再後活化 ^氣體與電 515026 五、發明說明（4) 極^面接觸。清洗氣體包含有Μ*、匕匕、C12、或其混合物 。私，清洗步驟使用條件並無特別限制，但一般而言，使 4 =頻電源其頻率大約13· 56MHz，電源約為75〜300W， 有 氣體流速約為低於2〇〇sccm，壓力範圍約為低於 4〇mT〇rr、使用溫度低於35(rc，製程時間（pr〇cess η託 )約為1 〇〜5 〇秒。 ，據本發明之一實施例，本方法包含下列步驟：首先 ，如第一圖所示，提供一底材丨丨〇，可能的底材至少可為 一石夕底材，然後形成第一導體層於底材110上作為電容器 之下電極120，可能之導體層至少可為鋁、銅、鉑、金、 銀二及鉻。接下來如第二圖所示，進行”電漿清洗步驟於 下電極120之表面。其中，使用的壓力範圍約為5〜37 mT〇rr、溫度範圍$35〇。〇、氣體流量約為4〇〜l8〇 sccm、 RF頻率為13· 56MHz、電漿電源範圍約為75〜300W，製程時 間約為1 0〜5 0秒。 然後’如第三圖所示，形成一介電層1 3 〇於已清洗過 的下電極120表面之上。可能之介電層至少可為五氧化二 组（Ta2 05 )、鳃鈦酸鋇（barium strontium titanate， BST)、錯鈦酸鉛（iea(i zirconiuni titanate，PZT)、 氧化物-氮化物-氧化物（ΟΝΟ)、氮化矽、氮氧化矽或二氧 化石夕。最後，·如第四圖所示，形成第二導體層1 4 〇覆蓋該 介電層1 3 0以作為電容器之上電極，如此即形成電容器。In another embodiment provided by the present invention, the formation of electricity includes the following steps. First, a first conductive layer is formed on a substrate by a method of patterning the first conductive layer and leaving the first conductive layer to form a capacitor, and then the surface of the lower electrode is cleaned with an RF plasma. Second, the formation of eighteen = ^. Rinse over the lower electrode. After that, a second conductor layer is formed, which is equal to two layers. Finally, a pattern is defined and the second conductor layer is etched as a ':: dielectric electrode. That is, the capacitor of this method is formed. 5-4 Detailed description of the invention: The preferred embodiment of the present invention will be discussed in detail such as 乂 m m 丄 w ^ ^ ^ ~ η μ I will use the specific example of the present invention instead of "; ::: made by electrolysis. The cup body is more technical than f-especially limited to fluorine. This clear container is described later in the convergence. Although the method of iron 0 W, +, and female ETB, θ @: Although I described the manufacturing order-Ling, I clearly know that it can also be-early: a capacitor. In this invention, the substrate material The semiconductor substrates of Shitong ^ S can be used. Generally, Shiya is not limited: Second, the present invention contains many traditional techniques: shield: semiconducting second shirt, etching, and chemical vapor deposition, etc. The second is Hot knowledge: T will elaborate on its content. Plasma cleaning steps and methods f There is no gas or chlorine atom-containing gas used as plutonium to form an electric cleaning gas, which is then activated ^ Gas and electricity 515026 5. Description of the invention (4 ) Extreme contact. The cleaning gas contains M *, dagger, C12, or a mixture thereof. Privately, the conditions of use of the cleaning step are not particularly limited, but in general, the frequency of a 4 = frequency power source is approximately 13.56 MHz, The power supply is about 75 ~ 300W, and the gas flow rate is about less than 200sccm. The force range is about less than 40mTorr, the use temperature is less than 35 (rc, and the process time (pr0cess nTorr) is about 10 to 50 seconds. According to one embodiment of the present invention, the method includes The following steps: First, as shown in the first figure, a substrate is provided. The possible substrate can be at least a stone substrate, and then a first conductor layer is formed on the substrate 110 as the capacitor lower electrode 120. The possible conductor layer can be at least aluminum, copper, platinum, gold, silver two, and chromium. Next, as shown in the second figure, a "plasma cleaning step" is performed on the surface of the lower electrode 120. The pressure range used is about 5 ~ 37 mT〇rr, temperature range $ 35.00, gas flow rate of about 40 ~ 180 sccm, RF frequency of 13.56MHz, plasma power supply range of about 75 ~ 300W, process time of about 10 ~ 50 Second. Then, as shown in the third figure, a dielectric layer 130 is formed on the surface of the cleaned lower electrode 120. The possible dielectric layer may be at least two groups of pentoxide (Ta2 05), gill titanium Barium strontium titanate (BST), iea (i zirconiuni titanate (PZT)), oxygen Carbide-nitride-oxide (NO), silicon nitride, silicon oxynitride, or silica. Finally, as shown in the fourth figure, a second conductor layer 1 4 0 is formed to cover the dielectric layer 1 3 0 As the electrode on the capacitor, a capacitor is formed.
五、發明說明（5) 可此作為上電極之物質至少包含氮化鈦（T i n )。 ^ 依據本發明之另一實施例，包含下列步驟：首先，如 第五圖所示，提供一底材21 〇，可能的底材至少可為一石夕 底材，然後形成第一導體層於底材210上，接著定義圖案 ，钱刻第一導體層以形成電容器的下電極22〇。可作為^ 容器下電極的可能導體層如同前一實施列所述。接下來如 ，六圖所示，以RF電漿清洗下電極220之表面。然後，如 所示’形成-介電層230於已清洗過的下電極22〇表 錯鈦酸扭 ^ 為虱化一鈕、锶鈦酸鋇、 二釔、乳化物-氮化物—氧化物、氮化矽、氮氧化 乳化石夕。然後’如第八圖， # _ 二 電層23 0之表面，麸德—差、同电、形成弟二導體層覆蓋介 成電容哭之上年朽;；4η疋圖术並蝕刻該第二導體層以形 含氮化鈦。如此即形成電容器為弟二電極之物質至少包 &以上所述僅為本發明之較 疋本發明之申諳A 牷員轭例而已，並非甩以限 精神下所完成之μ = ^丄凡其它未脫離本發明所揭示之 專利範圍;;之寻效改變或修飾’均應包含在下述之申請5. Description of the invention (5) The substance which can be used as the upper electrode contains at least titanium nitride (T i n). ^ According to another embodiment of the present invention, the method includes the following steps: First, as shown in the fifth figure, a substrate 21 is provided. The possible substrate can be at least a stone substrate, and then a first conductor layer is formed on the substrate. On the material 210, a pattern is then defined, and the first conductor layer is engraved to form the lower electrode 22 of the capacitor. Possible conductor layers that can be used as the bottom electrode of the container are as described in the previous implementation column. Next, as shown in FIG. 6, the surface of the lower electrode 220 is cleaned with an RF plasma. Then, as shown, the 'formation-dielectric layer 230' on the cleaned lower electrode 22 is epitaxial titanate. It is a button, barium strontium titanate, yttrium, emulsion-nitride-oxide, Silicon nitride, nitrogen oxide emulsified stone. Then as in the eighth figure, # _ on the surface of the second electrical layer 23 0, the bran-poor, the same electricity, forming the second conductive layer covering the dielectric capacitor, and then die; 4η 疋 drawing and etching the second The conductor layer contains titanium nitride in the shape. In this way, the substance that forms the capacitor as the second electrode is at least & The above is only an example of the application of the present invention. It is not a complete implementation of the spirit of the present invention. Μ = ^ 丄 凡Other changes or modifications that do not depart from the scope of the patent disclosed by the present invention should be included in the following applications
$ 8頁 515026 圖式簡單說明 如本說明之附圖中所示： 第一圖至第四圖是本發明之一較佳實施例的截面圖 示。 第五圖至第八圖是本發明之另一較佳實施例的截面圖 示〇 . 主要部分之代表符號： 110 底材 120 第一導體層 130 介電層 140 第二導體層 210 底材 220 第一導體層 230 介電層 240 第二導體層$ 8 pages 515026 Brief description of the drawings As shown in the drawings of this description: The first to fourth drawings are cross-sectional views of a preferred embodiment of the present invention. The fifth to eighth figures are cross-sectional views of another preferred embodiment of the present invention. Representative symbols of the main parts: 110 substrate 120 first conductor layer 130 dielectric layer 140 second conductor layer 210 substrate 220 First conductor layer 230 Dielectric layer 240 Second conductor layer