、發明說明（1 ) 發明之背景 1·發明之技術範圍 本發明大致上有關於圖案檢驗方法，以及圖案檢驗裝 置，以及貯存有圖案檢驗程式的記錄媒體。更特別地，本 發明有關於圖案檢驗方法和圖案檢驗裝置，藉電光系統和 圮錄圖案檢驗程式之記錄媒體之使用而用於圖案檢驗者。 當印刷佈線板或光罩上圖案設計業已急速地藉程式， 諸如電腦輔助設計（CAD)程式，而改進時，圖案檢驗已變 為更加重要，因為在保證高品質及高性能上增加困難。有 兩種圖案檢驗方法：一種是連續檢驗型，以及另一種是目 測檢驗型。 作為目測檢驗型之一傳統式圖案檢驗方法，有一晶粒 (die)對晶粒檢驗技術用以藉比較兩個鄰接晶片（晶粒）來實 施圖案檢驗。同時，有一種一晶粒對資料庫檢驗技術用以 藉比較一晶片（chip)與設計資料來實施圖案檢驗。 2.相關技藝之說明 第1圖係一晶粒對晶粒圖案檢驗裝置以及一晶粒對資 料庫圖案檢驗裝置之一方塊圖。第2圖係一流程圖，顯示第 1圖内所示裝置之操作。 此裝置包含兩個光學探測器（物鏡）仏和4b。此光學探 測器4a和一光接收構件6a拍攝晶片3a之影像資料（步驟s〗6) ’以及光學探測器4b和光接收構件6b拍攝要予以檢驗之晶 片3b之影像資料（步驟S22)。晶片％之拍攝之資料係貯存於 一影像記憶體7a内（步驟S20)，同時晶片讣之拍攝之影像資 五、發明說明（2) 料係貯存於一影像記憶體7b内（步驟S24)。在此，此光學探 測器4a和4b係位於如此之位置中，即它們可同一時間地掃 描晶片3a和3b上相同位置處之影像資料。 上述私序係晶粒對晶粒圖案檢驗中之影像資料拍攝程 序。在晶粒對資料庫圖案檢驗之情況中，另一方面，一資 料麦換單元14變換設計資料16成為影像資料（步驟S3〇)，以 及此變換之資料，取代由光學探測器4a和光接收構件仏所 拍攝之影像資料者，係貯存於影像記憶體以内（步驟S2〇) 〇 在晶粒對晶粒圖案檢驗和晶粒對資料庫圖案檢驗之兩 者障况中，一圖案複電路8比較貯存於影像記憶體7a内之影 像資料與貯存於影像記憶體7b内之影像資料（步驟S36),並 供應此比較結果至瑕疵探測電路9。依照比較結果，此瑕疵 探測電路9探測瑕疵（步驟S38)。 雖然第1圖内所示之裝置有兩個光學探測器4a和4b，但 。人亦可能僅引用一個光學探測器於晶粒對晶粒圖案檢驗 中。第3圖係另一晶粒對晶粒圖案檢驗裝置之方塊圖。第4 圖係第3圖之裝置之一流程圖。在這些圖中，如第丨和第2 圖中之相同構件係以相同代號表示。 第3圖之裝置有一光學探測器（物鏡）4。此光學探測器4 和一光接收構件ό拍攝晶片3a之影像資料（步驟S56)。一開 關Π隨後係連接至影像記憶體7a以便能貯存晶片3a之影像 資料於影像記憶體7a内（步驟S58)。此光學探測器4和一光 接收構件6拍攝另一晶片3b之影像資料（步驟S56)。此時， 515018 五、發明說明（3 ) 開關17係連接至影像記憶體7b以便能貯存晶片3b之影像資 料於影像記憶體7b内（步驟S60)。 此圖案複電路8隨後比較貯存於影像記憶體7a中之影 像資料與貯存於影像記憶體7 b中之影像資料（步驟S 6 2 )，並 供應此比較結果至瑕疵探測電路9。依照比較結果，此瑕疵 探測電路9探測瑕疵（步驟S64)。 每一所探測之瑕疵如第2及第4圖之流程圖内所示者係 藉目視檢驗來查對。第5圖係此瑕疵評估程序之流程圖。 瑕疲探測係已完成之後，此探測之瑕疲係一個一個地 讀出自瑕疵資訊記憶體10，以及此讀出資訊係經處理，俾 使母一瑕疯之位置可以目視（步驟S 8 6)。例如，此瑕疲點係 經放大並顯示。 一使用者一個一個地評鑑此瑕疵，並測定此瑕疲是否 係假瑕疲之可谷许者（步驟S 8 8)。此假瑕庇不是圖案拆開 或短路，而係設計資料和各晶片之間之差異。例如，形成 在一晶片上之圖案之圓角代表此類差異。 如果此瑕疵係經測定為一假瑕疵時，相當於此瑕症之 瑕疵資訊係經重寫（步驟S90)。此一程序係為每一探測之瑕 疵來實施，俾使假瑕疵係自最後瑕疵資料組被消除。 在使用第1圖内所示裝置之晶粒對晶粒圖案檢驗中，不 過，此兩個光學探測器4a和4b使此結構複雜導致高生產成 本。使用第3圖中所示之裝置之晶粒對晶粒圖案檢驗亦有一 問題，即一較大容量之影像記憶體係須要，那亦導致高生 產成本。 五、發明說明（4) 在此晶粒對資料庫圖案檢驗中，吾人必須準備此設計 資料，並變換此設計資料成為供檢驗用之影像資料。此一 資料變換佔用非常長之時間並導致不良之操作效率。 在上述檢驗之任一種中，圖案影像應係精確地作比較 ，以及因此一高精密度裝置係需要。 此外，形成於晶片上之圖案通常有圓角而不能與自設 計資料所變換之影像資料作比較。要實施適當之比較，此 圓角必須予以調整。不過，吾人很難以對此圓角來進行調 整，因為此類處理通常導引至錯誤探測以及假瑕疵。要避 免錯誤探測，顯示於第5圖之瑕疵評估程序係屬須要，以便 能評鑑會有假瑕疲資訊之瑕疵資訊，以致能自此最終瑕疵 二貝料組消除此假瑕症。不過，此瑕疲評鑑程序佔用非常長 之時間，以及目視評鑑通常減小檢驗之可靠性。 發明之概述 本發明之一般目的係在提供圖案檢驗方法，圖案檢驗 裝置，以及記錄媒體之貯存圖案檢驗程式者，其中上述缺 點係已消除。 本發明之一更特殊之目的係在提供一種圖案檢驗方法 以及圖案檢驗裝置，圖案檢驗藉此係以_簡單機械組態依 循一簡單程序而實施。本發明之另一特殊目的係在提供一 記錄媒體’它記錄圖案檢驗程式，用以實施由上述圖案檢 驗方法或上述圖案檢驗裝置之圖案檢驗。 本發明之上述目的係由一圖案檢驗方法所達成，它包 含之步驟為： 515018 五、發明說明（5) 以自一樣本所拍攝之圖案影像產生第一影像資料； 獲得第一圖案數，它係此第一影像資料中所含之圖案 之數目； 以一預定之寬度藉減小被包含於第一影像資料内之每 ;一圖案之四邊而產生第二影像資料； 獲得一第二圖案數，它係第二影像資料中所含之圖案 之數目； ' 依照第一圖案數和第二圖案數之間之比較結果，探測 樣本之圖案中之瑕疵。 ‘〇 依照上述方法，樣本圖案中所含之瑕疫係根據第一影 像資料内所含圖案數和第二影像資料中所含圖案數之間之 比較結果而探測。此係較藉比較兩個樣本之影像資料探測 瑕疲之傳統式瑕疲探測技術要更簡單。依此，圖案瑕疲探 測可以用—更簡要之機械組態依循—簡更程序而實施。 同時，本發明之圖案檢驗方法並不包括消除假瑕疲之 傳統式所須要之步驟。因此，操作效率可以改進。 本發明之上述目的係亦藉—圖案檢驗裝置來達成，它 第-^像資料產生器，它以自—樣本所拍攝之圖 案衫像產生第-影像資料；一第二影像資料產生器，它以 I預定之寬度藉縮小[影像資料中所含每_圖案之四邊 產生第二影像資料；—圖案數探測器，它探測第一圖案 二:第一影像資料内所含之圖案數，以及它亦探測第 探二？ :!Γ影像資料内所含圖案數;以及， 益匕依戶…1案數和第二圖案數之間之比較結果 515018 五、發明說明（〇 來探測樣本之圖案中所出現之瑕疫。Explanation of the invention (1) Background of the invention 1. Technical scope of the invention The present invention generally relates to a pattern inspection method, a pattern inspection device, and a recording medium storing a pattern inspection program. More particularly, the present invention relates to a pattern inspection method and a pattern inspection apparatus for use in a pattern inspector by using an electro-optical system and a recording medium recording a pattern inspection program. As pattern designs on printed wiring boards or photomasks have been rapidly borrowed from programs such as computer-aided design (CAD) programs, pattern inspection has become more important because of the increased difficulty in ensuring high quality and performance. There are two methods of pattern inspection: one is a continuous inspection type, and the other is a visual inspection type. As one of the traditional pattern inspection methods of visual inspection, a die-to-die inspection technique is used to perform pattern inspection by comparing two adjacent wafers (die). At the same time, there is a die-to-database inspection technique to perform pattern inspection by comparing a chip with design data. 2. Description of Related Techniques Figure 1 is a block diagram of a die-to-die pattern inspection device and a die-to-database pattern inspection device. Figure 2 is a flowchart showing the operation of the device shown in Figure 1. This device contains two optical detectors (objectives) 仏 and 4b. This optical detector 4a and a light receiving member 6a capture image data of the wafer 3a (step s6) and the optical detector 4b and light receiving member 6b capture image data of the wafer 3b to be inspected (step S22). The photographed data of the wafer% is stored in an image memory 7a (step S20), and the image data of the wafer 讣 is also recorded. V. Description of the invention (2) The material is stored in an image memory 7b (step S24). Here, the optical detectors 4a and 4b are located in such a position that they can simultaneously scan image data at the same position on the wafers 3a and 3b. The above-mentioned private sequence is the image data shooting procedure in the grain-to-grain pattern inspection. In the case of grain pair database pattern inspection, on the other hand, a data conversion unit 14 transforms the design data 16 into image data (step S30), and the converted data replaces the optical detector 4a and the light receiving member者 The recorded image data is stored in the image memory (step S20). In the obstacle condition of the grain-to-grain pattern inspection and the grain-to-database pattern inspection, a pattern complex circuit 8 is compared. The image data stored in the image memory 7a and the image data stored in the image memory 7b (step S36), and the comparison result is supplied to the defect detection circuit 9. According to the comparison result, the defect detection circuit 9 detects a defect (step S38). Although the device shown in Figure 1 has two optical detectors 4a and 4b, but. One may also cite only one optical detector for die-to-die pattern inspection. Figure 3 is a block diagram of another die-to-die pattern inspection device. Figure 4 is a flowchart of one of the devices of Figure 3. In these figures, the same components as in Figures 丨 and 2 are denoted by the same code. The device of Fig. 3 has an optical detector (objective lens) 4. The optical detector 4 and a light-receiving member 6 capture image data of the wafer 3a (step S56). A switch Π is then connected to the image memory 7a so that the image data of the chip 3a can be stored in the image memory 7a (step S58). The optical detector 4 and a light-receiving member 6 capture image data of another wafer 3b (step S56). At this time, 515018 V. Description of the invention (3) The switch 17 is connected to the image memory 7b so that the image data of the chip 3b can be stored in the image memory 7b (step S60). The pattern complex circuit 8 then compares the image data stored in the image memory 7a with the image data stored in the image memory 7b (step S 6 2), and supplies the comparison result to the defect detection circuit 9. According to the comparison result, the defect detection circuit 9 detects a defect (step S64). Each defect detected as shown in the flowcharts in Figures 2 and 4 is checked by visual inspection. Figure 5 is a flowchart of this defect assessment process. After the flaw detection system has been completed, the detected flaws are read out one by one from the flaw information memory 10, and the read information is processed so that the position of the mother can be visually inspected (step S 8 6) . For example, this defect is enlarged and displayed. The user evaluates the defect one by one, and determines whether the defect is the only one who can make false defects (step S 8 8). This false flaw is not a pattern opening or short circuit, but the difference between the design information and each chip. For example, the rounded corners of a pattern formed on a wafer represent such differences. If the defect is determined to be a false defect, the defect information corresponding to the defect is rewritten (step S90). This procedure is implemented for each detected defect, so that the false defect is eliminated from the last defect data set. In the die-to-die pattern inspection using the device shown in Fig. 1, however, the two optical detectors 4a and 4b complicate the structure and lead to high production costs. There is also a problem with the die pattern inspection using the device shown in Fig. 3, that is, a large-capacity image memory system is required, which also leads to high production costs. V. Description of the invention (4) In this pattern inspection of the database, we must prepare the design data and transform the design data into image data for inspection. This data conversion takes a very long time and leads to poor operating efficiency. In any of the above tests, the pattern images should be compared accurately, and therefore a high-precision device is needed. In addition, the patterns formed on the wafer usually have rounded corners and cannot be compared with the image data transformed from the design data. To implement a proper comparison, this fillet must be adjusted. However, it is difficult for us to adjust this fillet, because such processing usually leads to false detection and false defects. To avoid false detection, the defect assessment procedure shown in Figure 5 is necessary in order to be able to evaluate the defect information with false fatigue information, so that the final defect can be eliminated. However, this flaw assessment process takes a very long time, and visual assessment often reduces the reliability of inspections. SUMMARY OF THE INVENTION The general purpose of the present invention is to provide a pattern inspection method, a pattern inspection apparatus, and a storage pattern inspection program for a recording medium, in which the above-mentioned disadvantages have been eliminated. A more specific object of the present invention is to provide a pattern inspection method and a pattern inspection device, whereby the pattern inspection is performed with a simple mechanical configuration and a simple procedure. Another special object of the present invention is to provide a recording medium 'which records a pattern inspection program for performing pattern inspection by the above-mentioned pattern inspection method or the above-mentioned pattern inspection apparatus. The above object of the present invention is achieved by a pattern inspection method, which includes the steps of: 515018 V. Description of the invention (5) Generate the first image data from the pattern image taken from the sample; obtain the first pattern number, it Is the number of patterns contained in the first image data; a predetermined width is used to reduce each of the patterns contained in the first image data; the four sides of a pattern generate the second image data; obtain a second pattern number , Which is the number of patterns contained in the second image data; 'According to the comparison between the number of the first pattern and the number of the second pattern, detect the flaws in the pattern of the sample. ‘〇 According to the above method, the flaws contained in the sample pattern are detected based on the comparison between the number of patterns contained in the first image data and the number of patterns contained in the second image data. This is simpler than the traditional defect detection technology that detects defects by comparing the image data of the two samples. Based on this, the pattern defect detection can be implemented using—more briefly, mechanical configuration to follow—the simplified procedure. At the same time, the pattern inspection method of the present invention does not include the steps necessary for the conventional method of eliminating false fatigue. Therefore, operation efficiency can be improved. The above-mentioned object of the present invention is also achieved by a pattern inspection device, which is an image data generator, which generates image data from a pattern shirt image taken from a sample; a second image data generator, which The second image data is generated by reducing the predetermined width of I to each of the four sides of the pattern contained in the image data; the pattern number detector detects the first pattern 2: the number of patterns contained in the first image data, and Also probe the second? :! Γ The number of patterns contained in the image data; and, the comparison result between the number of cases and the number of patterns in the first and second patterns 515018 5. Description of the invention (0 to detect the defects in the patterns of the samples.
10 本發明之上述目的係亦由—電腦可讀取記錄媒體來達 成，其中一程式係經記錄，此程式提供具有下列功能之運 算··-第-影像資料產生器，它以自—樣本所拍攝之圖案 影像產生第-影像資料··—第二影像資料產生器，它以一 預定之寬度，藉縮小第-影像資料内所含每_圖案之四邊 而產生第二影像資料；一圖案數探測器，它探測第一圖案 數’那係第-影像資料内所含之圖案數，以及它亦探測一 第二圖案數，那係第二影像資料内所含之圖案數；以及一 瑕疵探測器，它依照第一圖案數和第二圖案數之間之比較 結果而探測樣本之圖案中所出現之瑕庇。 藉上述記錄媒體之使用，本發明之圖案檢驗方法和裝 置即可以實現。 、 本發明之上述及其他目的和特徵，自下列關聯附圖所 5 作之說明將更為明晰。 圖式之簡要說明 第1圖係早期技藝之晶粒對晶粒圖案檢驗裝置和晶粒 對資料庫圖案檢驗裝置之一方塊圖； 第2圖係第1圖内所示裝置之操作程序之一流程圖； 〇 第3圖係早期技藝之另一晶粒對晶粒圖案檢驗裝置之 方塊圖； 第4圖係第3圖内所示裝置之操作程序之一流程圖； 第5圖係早期技藝之瑕疵評鑑程序之流程圖； 第6A和6B圖顯示通過依照本發明之圖案檢驗在影像 515018 五、發明說明（7) 資料中所探測之隔離之瑕疵； 第7 A和7B圖顯示通過依照本發明之圖案檢驗，在影像 資料中所探測之一短路或拆聯之瑕/疵； 第8A和8B圖顯示通過依照本發明之圖案檢驗，在影像 5 資料中所探測之邊緣瑕疵； 第9圖係本發明之一圖案檢驗裝置之一具體例之方塊 圖；以及 第10圖係本發明之一圖案檢驗裝置之操作之流程圖。 較佳具體例之說明 〇 下文係以附圖為基準之本發明之具體例之說明。 首先參看第6圖，一隔離瑕疵之檢驗將作解釋。第6A 圖顯示代表要予以檢驗之一晶片之一部分之影像資料，以 及第6B圖顯示依照本發明之圖案檢驗之後之影像資料。 在第6A和6B圖中，有白色圖案和黑色圖案。本發明係 5可應用於白色圖案和黑色圖案兩者。吾人可能來決定那一 圖案係使用檢驗前所設定之初始狀況予以檢驗。白色圖案 和黑色圖案兩者可以藉檢驗白色圖案於第一掃描中和黑色 圖案於第二掃描中來檢驗。由於白色圖案和黑色圖案兩者 之圖案檢驗操作係相同，故僅對黑色圖案上之檢驗操作將 20 予解釋如下文。 第6A圖内影像資料20代表要予檢驗之晶片之一部分 。此影像資料20有一 25x 25像素所形成之矩陣結構。每一 像素22代表由拍攝此影像資料2〇之光接收構件所辨識之最 小可能之大小。 五、發明說明（8) 此影像資料20含三個圖案24、26和28。圖案24和26係 正常圖案，而圖案28係一不正常圖案，亦即，它含一瑕疵 此三個圖案24、26和28隨後係以一預定縮小寬度而在 尺寸上減小。此一縮小寬度係以在要予檢驗之晶片上最小 之圖案寬度來測定，例如，並係以一像素數來表示。當以 預定之縮小寬度來縮小時，一正常圖案係不會自影像資料 2〇消失或不見。 第6B圖内之影像資料30係每一圖案24、26和28之四邊 以2像素所縮小之後之影像資料2〇。此影像資料3〇包括兩個 圖案34和36。作為影像資料20内所包括之圖案之縮小之結 果，此圖案28已自影像資料30消失。依此，圖案縮小之前 影像資料20内圖案數和圖案縮小之後影像資料3〇内圖案數 之間之差異即指示一瑕疵係出現於影像資料2〇内。 第7A和7B圖顯示在短路或拆開瑕疵之一情況中之圖 案檢驗操作。第7A圖顯示代表一部分之要予檢驗之一晶片 之影像資料，以及第7B圖顯示依照本發明之圖案檢驗之後 之影像資料。 第7A圖中之影像資料4〇係自一部分要予檢驗之晶片 所拍攝，並有—單案以由不正常圖案部分48所短路之 兩個圖案44和46所形成。 /在影像資料㈣之單-圖案係在各邊處以2像素縮小 之後顯7Γ：於第7A圖中之單-圖案係被分成兩個圖案⑷口 56。不正常圖案部分48係以圖案縮減而消失所形成 515018 五、發明說明（ ，圖案縮小之前影像資料40内之圖案數和圖案縮小之後影 像資料5 0内之圖案數兩者間之差異即指示該一瑕庇係出現 於影像資料40内。 第8A和8B圖顯示一邊緣瑕疲之情況中之圖案檢驗操 作。第8A圖顯示代表一部分要予以檢驗之晶片之影像資料 ’以及第8B圖顯示依照本發明之圖案檢驗之後之影像資料 第8A圖中之影像負料60係自一部分要予以檢驗之晶 10 片所拍攝，並有兩個圖案64和66。此圖案66含一不正常圖 案部分68。 兩個圖案6 4和6 6係在各邊以2像素縮小之後，顯示於第 8A圖中之兩個圖案64和66變成為顯示於第8β圖之影像資 料70中之二個圖案74、76和78。更明確言，此不正常圖案 部分68係以影像資料6〇内所含圖案％之縮小而消失，以及 圖案66變成為兩個圖案76和78。依此，圖案縮小之前之影 像貝料6G内之圖案數和圖案縮小之後之影像資料70内之圖 案數兩者之間之差異指示_瑕症係出現於影像資料6〇内。 以上述方法，影像資料内所含圖案係以由最小圖案寬 度:預定之縮小寬度所縮小，以及一瑕疵是否係出躲影 像貝料中係稭比較圖案縮小之前之影像資料中之圖案數和 圖n之後之影像資料中之圖案數而測定。 。第9圖：二發明之一圖案檢驗裝置和其操作將予以說明 :本發明之圖案檢驗裝置之一具體例之方塊圖。 θ内所不裝置包含下列各項：一光源1，·χ-γ枱2; · 12 五、發明說明（10 ) 印刷板或一光罩之要予檢驗者係置於其上；又_丫枱狀態位 置控制單元由一㊀驅動器8 1，一 X驅動器82，一 Y驅動器83 ，和一位置探測器84所形成；一光學探測器（一物鏡）4用以 探測自光源1所放射之光以及通過此X-Y枱所傳輸之光；一 5光接收構件（一 CCD)6，用以產生自由光接收構件6所產生 之貯存之電彳5號之影像資料，一圖案縮小部分91 ,用以縮 小自影像記憶體7所供應之影像資料内所含之圖案；一圖案 數探測器92 ’用以探測圖案縮小之前影像資料内之圖案數 和圖案縮小之後影像資料内之圖案數；一圖案數記憶體94 ° ，用以貯存圖案縮小之前影像資料内之圖案數和圖案縮小 之後景> 像資料内之圖案數；一瑕疲探測器93，藉比較圖案 數記憶體94内所貯存之圖案數用以探測一瑕疵；一瑕疵資 訊記憶體10，用以貯存探測之瑕疵之資訊；一評鑑狀況記 憶體86，用以貯存評鑑狀況；一顯示器85，以及一電腦u 5 ，用以控制整個裝置之操作。 此電腦11，以位置探測器84探測又_¥枱2之位置，並控 制Θ驅動器81，X驅動器82和¥驅動器83以移動此χ_γ枱2 。此電腦11亦控制此自動聚焦單元5以調整光學探測器4之 位置。 〇 在第9圖中，由一虛線所環繞之部分90具體實施本發明 之特性，以及任一硬體或軟體可構成此圖案縮小部分91， 圖案數探測器92，以及瑕疵探測器93。 下文中弟9圖内之母一方塊將更詳細地予以說明。光 源1係位於Χ-Υ枱2之下，以及自光源i所放射之光係通過 13 51501810 The above-mentioned object of the present invention is also achieved by a computer-readable recording medium. One of the programs is recorded. This program provides operations with the following functions. The first image data generator, which uses the The photographed pattern image generates the first-image data ... The second image data generator generates a second image data by reducing the four sides of each pattern contained in the first-image data with a predetermined width; a number of patterns A detector that detects the number of patterns included in the first image data, and the number of patterns included in the second image data, and a flaw detection The device detects the defects appearing in the pattern of the sample according to the comparison result between the first pattern number and the second pattern number. By using the above recording medium, the pattern inspection method and apparatus of the present invention can be realized. The above and other objects and features of the present invention will be made clearer from the following description with reference to the accompanying drawings. Brief description of the drawings. Figure 1 is a block diagram of a die-to-die pattern inspection device and a die-to-database pattern inspection device of the early technology; Figure 2 is one of the operating procedures of the device shown in Figure 1 Flow chart; ○ Figure 3 is a block diagram of another die-to-die pattern inspection device of the early technology; Figure 4 is a flowchart of an operating procedure of the device shown in Figure 3; Figure 5 is an early technology Flow chart of defect assessment procedure; Figures 6A and 6B show isolated defects detected in the image 515018 by inspection of the pattern according to the present invention V. Invention description (7); Figures 7A and 7B show The pattern inspection of the present invention detects a short circuit or disconnection of a defect / defect in the image data; Figures 8A and 8B show edge defects detected in the image 5 data by the pattern inspection according to the present invention; Section 9 The figure is a block diagram of a specific example of a pattern inspection apparatus of the present invention; and FIG. 10 is a flowchart of the operation of the pattern inspection apparatus of the present invention. Description of preferred specific examples 〇 The following is a description of specific examples of the present invention based on the drawings. Referring first to Figure 6, an inspection to isolate defects will be explained. Fig. 6A shows image data representing a portion of a wafer to be inspected, and Fig. 6B shows image data after pattern inspection according to the present invention. In FIGS. 6A and 6B, there are a white pattern and a black pattern. The present invention 5 can be applied to both white and black patterns. We may decide which pattern is to be tested using the initial conditions set before the test. Both the white pattern and the black pattern can be checked by checking the white pattern in the first scan and the black pattern in the second scan. Since the pattern inspection operation is the same for both the white and black patterns, only the inspection operation on the black pattern will be explained as follows. The image data 20 in Fig. 6A represents a part of the wafer to be inspected. The image data 20 has a matrix structure formed by 25x25 pixels. Each pixel 22 represents the smallest possible size recognized by the light-receiving member that captured the image data 20. V. Description of the invention (8) This video material 20 contains three patterns 24, 26 and 28. The patterns 24 and 26 are normal patterns, and the pattern 28 is an abnormal pattern, that is, it contains a flaw. The three patterns 24, 26, and 28 are then reduced in size by a predetermined reduced width. This reduced width is measured by the smallest pattern width on the wafer to be inspected, for example, and is expressed in one pixel. When reduced by a predetermined reduction width, a normal pattern does not disappear or disappear from the image data 20. The image data 30 in FIG. 6B is the image data 20 after the four sides of each pattern 24, 26, and 28 are reduced by 2 pixels. This image data 30 includes two patterns 34 and 36. As a result of the reduction of the pattern included in the image data 20, this pattern 28 has disappeared from the image data 30. Accordingly, the difference between the number of patterns in the image data 20 before the pattern reduction and the number of patterns in the image data 30 after the pattern reduction indicates that a defect appears in the image data 20. Figures 7A and 7B show the pattern inspection operation in the case of one of the short-circuit or dismantling defects. Fig. 7A shows image data representing a part of a wafer to be inspected, and Fig. 7B shows image data after pattern inspection according to the present invention. The image data 40 in Fig. 7A is taken from a part of the wafer to be inspected, and has a single item formed by two patterns 44 and 46 shorted by the abnormal pattern portion 48. / Single-pattern in the image data frame is reduced by 2 pixels on each side and displayed as 7Γ: The single-pattern system in FIG. 7A is divided into two pattern openings 56. The abnormal pattern portion 48 is formed by the pattern shrinking and disappearing 515018. 5. Description of the invention (, the difference between the number of patterns in the image data 40 before the pattern reduction and the number of patterns in the image data 50 after the pattern reduction indicates the difference. A flaw is shown in the image data 40. Figures 8A and 8B show a pattern inspection operation in the case of an edge flaw. Figure 8A shows the image data representing a portion of the wafer to be inspected, and Figure 8B shows the Image data after the pattern inspection of the present invention The image negative material 60 in FIG. 8A is taken from a part of 10 crystals to be inspected, and has two patterns 64 and 66. The pattern 66 includes an abnormal pattern portion 68 After the two patterns 64 and 66 are reduced by 2 pixels on each side, the two patterns 64 and 66 shown in FIG. 8A become two patterns 74 and 66 in the image data 70 shown in FIG. 8β. 76 and 78. More specifically, the abnormal pattern portion 68 disappears with a reduction of the pattern% contained in the image data 60, and the pattern 66 becomes two patterns 76 and 78. Accordingly, the image before the pattern is reduced The difference between the number of patterns in the material 6G and the number of patterns in the image data 70 after the pattern is reduced indicates that the defect appears in the image data 60. In the above method, the patterns in the image data are based on It is determined by the minimum pattern width: reduced by the predetermined reduction width, and whether a defect is caused by the number of patterns in the image data before the pattern is reduced and the number of patterns in the image data after the figure n. Figure 9: The pattern inspection device of one of the two inventions and its operation will be explained: a block diagram of a specific example of the pattern inspection device of the present invention. The devices included in θ include the following: a light source 1, x- γ stage 2; · 12 V. Description of the invention (10) The printed board or a photomask is placed on it; and the _Yatai state position control unit is composed of a drive 8 1 and an X drive 82, A Y driver 83 and a position detector 84; an optical detector (an objective lens) 4 for detecting the light emitted from the light source 1 and the light transmitted through the XY stage; a 5 light receiving member (a CCD) 6, used to generate The stored image data of No. 5 Electron No. 5 produced by the light receiving member 6 is a pattern reduction portion 91 for reducing the pattern contained in the image data supplied from the image memory 7; a pattern number detector 92 is used The number of patterns in the image data before the pattern reduction and the number of patterns in the image data after the pattern reduction are detected; a pattern memory of 94 ° is used to store the number of patterns in the image data before the pattern reduction and the scene after the pattern reduction> image The number of patterns in the data; a defect detector 93 that compares the number of patterns stored in the pattern number memory 94 to detect a defect; a defect information memory 10 that stores information about the detected defect; a comment The status memory 86 is used to store the status of the review; a display 85 and a computer u 5 are used to control the operation of the entire device. This computer 11 detects the position of _ ¥ stage 2 with a position detector 84, and controls the Θ driver 81, X driver 82, and ¥ driver 83 to move the χ_γ stage 2. The computer 11 also controls the autofocus unit 5 to adjust the position of the optical detector 4. 〇 In FIG. 9, a portion 90 surrounded by a dotted line embodies the characteristics of the present invention, and any hardware or software may constitute the pattern reduction portion 91, the pattern number detector 92, and the defect detector 93. The mother box in Figure 9 below will be explained in more detail. Light source 1 is located below XY-stage 2 and light emitted from light source i passes 13 515018
五、發明說明（11 ) x-γ枱2而傳送並供應至光學探測器4。光學探測器4調整此 光線並隨後輸出它至光接收構件6。此光接收構件6變換自 光學探測器4所供應之光成為一電信號，並貯存它於影像記 憶體7内。 5 此影像記憶體7以自光接收構件6所供應之電信號產生 影像資料，並輸出此影像資料至圖案縮小部分91和圖案數5. Description of the invention (11) The x-γ stage 2 is transmitted and supplied to the optical detector 4. The optical detector 4 adjusts this light and then outputs it to the light receiving member 6. This light-receiving member 6 converts the light supplied from the optical detector 4 into an electric signal, and stores it in the image memory 7. 5 This image memory 7 generates image data from the electrical signal supplied from the light receiving member 6 and outputs this image data to the pattern reduction portion 91 and the number of patterns
探測益92。自影像記憶體7所輸出之影像資料，例如，可能 如第6 A圖中所示者。 此圖案縮小部分9卜卩-預定之縮小寬度縮小影像資 10料内所含之圖案，並輸出有縮小圖案之此影像資料至圖案 數探測裔92。自圖案縮小部分91所輸出之影像資料，例如 ，可以是如第6B圖中所顯示者。Detect benefits 92. The image data output from the image memory 7 may be, for example, as shown in Fig. 6A. This pattern reduction part 9: The predetermined reduction width reduces the image data contained in the pattern, and outputs the image data with the reduction pattern to the pattern number detection line 92. The image data output from the pattern reduction section 91, for example, may be as shown in FIG. 6B.
此圖案數探測器92,探測自影像記憶體7所供應之影像 貝料内之圖案數以及自圖案縮小部分91所供應之影像資料 15内之圖案數。此圖案數探測器92隨後貯存圖案縮小前之圖 案數和圖案縮小後之圖案數於圖案數記憶體94内。 瑕疵探測器93，以圖案縮小後之影像資料中之圖案數 比較圖案縮小前之影像資料中之圖案數，並依照此比較結 果而實施瑕疵探測。更明確言，當此比較結果顯示該圖案 20縮小後之圖案數係不等於圖案縮小前之圖案數時，此瑕疵 採測器93測定至少一個瑕疵係出現於檢驗之範圍内，並貯 存此瑕疵資訊於瑕疵資訊記憶體1〇内。使用於依照本發明 之圖案檢驗中之檢驗資訊，諸如最小之圖案寬度，縮小寬 度’以及圖案檢驗範圍，係貯存於檢驗狀況記憶體86内。 14 五、發明說明（12) 在軟體係經引用於本發明之圖案檢驗裝置中之圖案縮 小部为9卜圖案數探測器92，以及瑕疲探測器％之情況中 ，-圖案檢驗程式係自—記錄媒體96供應。各種類之記錄 媒體可以被引用作為此記錄媒體96。例如，記錄媒體％可 以是-磁性記錄媒體，其中資訊係磁效應地被記錄，諸如 CD-ROM,軟磁碟，或磁光碟，或一半導體記憶體其中資 訊係電效應地被記錄，諸如唯讀記憶體R〇M或快閃記憶體 此記錄媒體96，圖案檢驗程式係被記錄其中者，係在 0 驅動單元95内设定。此圖案檢驗程式係經由此驅動單元 95而安裝在電腦u中之一記憶體裝置（圖中未顯示）中。此 電腦11依循圖案檢驗程式而實施圖案縮小部分91，圖案數 探測器92和瑕疵探測器93之功能。 第10圖係本發明之圖案檢驗裝置之操作程序之流程圖 5 ° 在步驟S100中，一樣本（一晶片）要予檢驗者，諸如一 印刷板或一光罩，係放置於Χ_γ枱2上。在圖案檢驗中所要 求之檢驗狀況隨後係在步驟S110中輸入。此檢驗狀況係要 予運用於圖案檢驗中之資訊，諸如最小之圖案寬度，縮小 〇見度，以及圖案檢驗範圍。在此，要予檢驗之圖案之顏色 可以選定。在此一具體例中，黑色圖案係被檢驗。 在步驟S120中’此電腦11控制㊀驅動器g 1，X驅動器 82 ’和Y驅動器83以調整χ_γ枱2之位置，同時亦控制此自 動聚焦單元5以調整光學探測器4之位置。因此，自光源^ 、發明說明（13) 所放射以及通過置於χ_γ枱2上之晶片所傳送之光到達光 接收構件6。 在步驟S130中，此光接收構件6變換此光成為一電信 號，並貯存它於影像記憶體7内。此影像記憶體7隨後以自 光接收構件6所供應之電信號而產生影像資料，並輸出此影 像資料至圖案縮小部分91和圖案數探測器92。 在步驟S140中，此圖案縮小部分91以一預定之寬度縮 小影像資料中所含之圖案，並輸出含有此縮小之圖案之影 像資料至圖案數探測器92。 在步驟S150中，此圖案數探測器92探測自影像記憶體 7所供應之影像資料内之圖案數以及自圖案縮小部分91所 供應之影像資料中之圖案數。在步驟S160中，圖案縮小前 之影像資料中之圖案數和圖案縮小後之影像資料中之圖案 數係貯存於影像記憶體94内。 在步驟S180中，此瑕疵探測器93比較貯存於影像記憶 體94内之圖案縮小後之圖案數與圖案縮小前之圖案數。如 果此比較結果顯示圖案縮小後之圖案數係不等於圖案縮小 前之圖案數時，此瑕疵探測器93確定至少一個瑕疵係出現 於檢驗之範圍内。 如果此瑕疵探測器93探測一瑕疵於步驟S190中時，它 貯存此瑕疵資訊於瑕疵資訊記憶體10内在步驟S200中，以 及此操作移向步驟S210。如果此瑕疵探測器93確定沒有瑕 疵係出現於檢驗範圍内於步驟S190時，此操作移向步驟 S210 〇 515018The pattern number detector 92 detects the number of patterns in the image material supplied from the image memory 7 and the number of patterns in the image data 15 supplied from the pattern reduction section 91. The pattern number detector 92 then stores the number of patterns before pattern reduction and the number of patterns after pattern reduction in the pattern number memory 94. The defect detector 93 compares the number of patterns in the image data before pattern reduction with the number of patterns in the image data after pattern reduction, and performs defect detection based on the comparison result. More specifically, when the comparison result shows that the number of patterns after the pattern 20 is reduced is not equal to the number of patterns before the pattern is reduced, the defect detector 93 determines that at least one defect is within the scope of inspection and stores the defect The information is in defect information memory 10. The inspection information used in the pattern inspection according to the present invention, such as the minimum pattern width, reduced width ', and pattern inspection range are stored in the inspection status memory 86. 14 V. Description of the invention (12) In the case where the pattern reduction part of the soft system which is cited in the pattern inspection device of the present invention is a 9 pattern detector 92 and a defect detector%, the pattern inspection program is from -Supply of recording medium 96. Various kinds of recording media can be cited as this recording medium 96. For example, the recording medium may be a magnetic recording medium in which information is recorded magnetically, such as a CD-ROM, a floppy disk, or a magneto-optical disc, or a semiconductor memory in which information is recorded electrically, such as read-only Memory ROM or flash memory This recording medium 96, the pattern inspection program is recorded therein, and is set in the 0 drive unit 95. The pattern checking program is installed in a memory device (not shown) in the computer u through the driving unit 95. This computer 11 implements the functions of the pattern reduction section 91, the pattern number detector 92, and the defect detector 93 in accordance with the pattern inspection program. Figure 10 is a flowchart of the operation procedure of the pattern inspection device of the present invention. 5 In step S100, a sample (a wafer) to be inspected, such as a printed board or a photomask, is placed on the X_γ stage 2 . The inspection status required in the pattern inspection is then input in step S110. This inspection status is to be applied to the information in the pattern inspection, such as the minimum pattern width, reduced visibility, and the pattern inspection range. Here, the color of the pattern to be inspected can be selected. In this specific example, the black pattern is checked. In step S120, 'this computer 11 controls the ㊀ driver g1, the X driver 82', and the Y driver 83 to adjust the position of the χ_γ stage 2 and also controls the autofocus unit 5 to adjust the position of the optical detector 4. Therefore, the light emitted from the light source ^, invention description (13), and the light transmitted through the wafer placed on the χ_γ stage 2 reaches the light receiving member 6. In step S130, the light receiving member 6 converts the light into a telecommunication signal and stores it in the image memory 7. The image memory 7 then generates image data based on the electrical signals supplied from the light receiving member 6, and outputs the image data to the pattern reduction section 91 and the pattern number detector 92. In step S140, the pattern reduction section 91 reduces the pattern contained in the image data by a predetermined width, and outputs the image data containing the reduced pattern to the pattern number detector 92. In step S150, the pattern number detector 92 detects the number of patterns in the image data supplied from the image memory 7 and the number of patterns in the image data supplied from the pattern reduction section 91. In step S160, the number of patterns in the image data before the pattern reduction and the number of patterns in the image data after the pattern reduction are stored in the image memory 94. In step S180, the defect detector 93 compares the number of patterns after reduction of the pattern stored in the image memory 94 with the number of patterns before reduction of the pattern. If the result of this comparison shows that the number of patterns after the pattern reduction is not equal to the number of patterns before the pattern reduction, the defect detector 93 determines that at least one defect appears within the inspection range. If the defect detector 93 detects a defect in step S190, it stores the defect information in the defect information memory 10 in step S200, and the operation moves to step S210. If the defect detector 93 determines that no defect appears in the inspection range at step S190, the operation moves to step S210. 515018
515018 五、發明說明（l5) 5…自動聚焦單元 6a、b…光接收構件 7a、b…影像記憶體 8…複電路 9…瑕疵探測電路 10…瑕疵資訊記憶體 11…電腦 14…資料變換單元 16…設計資料 17…開關 20…影像資料 22…像素 24、26、28···圖案 30…影像資料 34、36···圖案 40···影像資料 44、46···正常圖案 48···不正常圖案部分 54、56···圖案 60…影像資料 64、66…圖案 68…不正常圖案 70…影像資料 74、76、78···圖案 81…Θ驅動器 8 2…X驅動器 83··· Y驅動器 84…位置探測器 85···顯示器 86…評鑑狀況記憶體 91…圖案縮小部分 92…圖案數探測器 93…瑕疵探測器 94…圖案數記憶體 95…驅動單元 96…記錄媒體 S10〜S210…步驟 18515018 5. Description of the invention (l5) 5 ... Autofocus unit 6a, b ... Light receiving member 7a, b ... Image memory 8 ... Multi-circuit 9 ... Defect detection circuit 10 ... Defect information memory 11 ... Computer 14 ... Data conversion unit 16 ... Design data 17 ... Switch 20 ... Video data 22 ... Pixels 24, 26, 28 ... Pattern 30 ... Video data 34, 36 ... Pattern 40 ... Image data 44, 46 ... Normal pattern 48 ... ·· Abnormal pattern part 54 · 56 ·· Pattern 60 ... Image data 64,66 ... Pattern 68 ... Irregular pattern 70 ... Image data 74,76,78 ... Pattern 81 ... Θ driver 8 2 ... X driver 83 ··· Y drive 84 ... Position detector 85 ··· Display 86 ... Evaluation status memory 91 ... Pattern reduction 92 ... Pattern number detector 93 ... Defective detector 94 ... Pattern number memory 95 ... Drive unit 96 ... Recording media S10 ~ S210 ... Step 18