經濟部智慧財產局員工消費合作社印製 511230 A7 •^ _5L_______ 五、發明說明（） 發明領域： 本發明係有關於一種半導體積體電路的製造方法’特別是有 關於一種具低介電常數之多孔洞材質介電層的形成方法。 發明背景： 隨著半導體技術之發展，對於半導體元件尺寸之要求也向深 次微米的領域中邁進。當積體電路積集度隨之增加時，晶片表面 必須提供足夠的面積，以製作所需的金屬內連線（interconnects)。 惟金屬內連線因爲其電阻以及相鄰金屬內連線之間的電容耦合等 問題，會造成金屬內連線之訊號傳遞的延遲，使整體積體電路的 操作速率無法有效提升，而且亦無法使其功率耗損有效下降。爲 了解決上述之電阻電容延遲(RC delay)問題，需要使用具有低介電 常數之介電材質，以解決此相鄰金屬內連線間之電容耦合的問題。 爲此，有許多低介電常數材質被開發出來，如以其化學成分 區分，可分成含碳的有機類與不含碳的無機類等兩種；如依其沉 積方法，可分爲以旋塗式塗佈所形成之低介電常數材質（例如，D〇w Chemical公司之SiLK)，以及以化學氣相沉積法所形成之低介電 常數材質（例如，美商應用材料公司之BlackDiam〇nd)。 使用旋塗式塗佈法的缺點是薄膜中易含有機溶劑物質，因此 薄膜的釋氣（cmtgassing)會導致介質窗之毒化（via p〇is〇ning)及剝 -------------------t --------- (請先閱讀背面之注意事項再填寫本頁) 2Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 511230 A7 • ^ _5L_______ V. Description of the Invention () Field of the Invention: The present invention relates to a method for manufacturing a semiconductor integrated circuit, and more particularly to a method having a low dielectric constant. Forming method of hole material dielectric layer. Background of the Invention: With the development of semiconductor technology, the requirements for the size of semiconductor elements have also moved into the field of deep sub-microns. When the integration degree of integrated circuits increases, the surface of the chip must provide enough area to make the required metal interconnects. However, because of problems such as resistance and capacitive coupling between adjacent metal interconnects, metal interconnects can cause delays in the signal transmission of the metal interconnects, making it impossible to effectively increase the operating speed of the integrated circuit. Its power consumption is effectively reduced. In order to solve the above-mentioned RC delay problem, a dielectric material with a low dielectric constant needs to be used to solve the problem of capacitive coupling between the adjacent metal interconnects. For this reason, many low-dielectric constant materials have been developed. For example, their chemical composition can be divided into two types: carbon-containing organic and carbon-free inorganic. According to their deposition methods, they can be divided into Low dielectric constant materials formed by coating (for example, SiLK from Dow Chemical Company) and low dielectric constant materials formed by chemical vapor deposition (for example, BlackDiam from Applied Materials). nd). The disadvantage of using the spin-coating method is that the film is prone to contain organic solvent substances, so the outgassing (cmtgassing) of the film will cause the via window (via p〇is〇ning) and peeling -------- ----------- t --------- (Please read the notes on the back before filling this page) 2
經濟部智慧財產局員工消費合作社印製 511230 A7 _ B7 五、發明說明（） 離，同時其使用化學溶液，因此製程時間長，導致時間成本大增， 不符現代半導體製造之大量產出的要求。反之，化學氣相沉積法 不會產生介質窗毒化及剝離的問題，而且其製程時間短，因此將 成爲未來有關薄膜製程之主要技術。 低介電常數多孔洞材質之前導物，諸如三乙基磷酸酯 (triethylphosphate ;簡稱TEPO)，多爲液態物質。因此傳 統技術在進行化學氣相沉積製程時，需要使用載氣，將這 些液態前導物載入化學氣相沉積反應室內。通常使用的載 氣多爲鈍性氣體，例如氮氣、氬氣、或氦氣，其中又以氦 氣爲常用。 惟在使用電漿增進化學氣相沉積法（plasma enhanced chemical ;簡稱PECVD)沉積多孔洞材質時，這些多孔洞材 質之多孔洞結構往往有相當大程度的瓦解，也就是原本應 有的多孔洞結構，在薄膜沈積之後，會遭到相當程度的破 壞。 孔洞結構爲此薄膜之介電常數低於一般介電材質之 主要原因，所以該孔洞結構之瓦解，將使得薄膜之介電常 數大幅上昇。因此，極需提出一種避免多孔洞結構被破壞 或降低多孔洞結構被破壞程度的製造方法。 發明目的及槪述： 本發明的目的是在提出一種減少或無需使用鈍性氣體作爲 3 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公 — ！！.------參裝--------訂---------§ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 511230 A7 —-----2Z_ 五、發明說明（） 載氣，以沉積具低介電常數之多孔洞膜的方法，以避免多孔洞結 構被破壞或降低多孔洞結構被破壞之程度。 根據上述目的，本發明提出一種形成方法。此方法係首先置 放一底材於化學氣相反應室內，然後再使用一第一反應氣 體，此氣體同時兼作反應物及載氣。接著，載入一第二反 應氣體，其在常溫常壓下爲液體。此第二反應氣體以前述 之第一反應氣體作爲之載氣，載入置上述之有置放底材的 化學氣相沉積室。最後，第一反應氣體與第二反應氣體在 化學氣相沉積反應室內進行反應，並沉積一具有低介電常 數之多孔洞膜。 根據上述目的，本發明提出另一種形成方法。此方法係首先 置放一底材於化學氣相反應室內，然後再使用一第一反應 氣體，此氣體同時兼作氧化劑及載氣。接著，載入一第二 反應氣體及一第三反應氣體，此第二反應氣體及第三反應 氣體以前述之第一反應氣體作爲之載氣，載入置上述之有 置放底材的化學氣相沉積室。最後，第一反應氣體與第二 反應氣體、第三反應氣體在化學氣相沉積反應室內進行反 應，並沉積一具有低介電常數之多孔洞膜。 鑒於上述之發明目的，透過本發明，可以減少或不使用鈍性 氣體作爲載氣，以減少在化學氣相反應器中之離子濃度，因而維 持薄膜之多孔洞結構。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） -----------裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 511230 A7 B7 五、發明說明（） 圖式簡單說明： 爲讓本發明之上述和其他目的、特徵、和優點能更明顯易 懂，下文特舉一較佳實施例，並配合所附圖式，作詳細說明如下： 第一圖爲符合本發明之一具體實施例，用以沉積多孔 洞薄膜層。 第二圖爲符合本發明之另一具體實施例，用以沉積多 孔洞薄膜層。 要注意的是，所附加之圖式僅是說明本發羽之典型具體實施 例，本發明之範圍並不受此附加圖式之限制，本發明仍適用於其 它等效之具體實施例。並且爲增進理解，將儘可能對相同之元素 指定相同之參考數字。 圖號對照說明： -----------•裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 100 ： 化學氣相沉積反應室 110： 平台 120 ： 底材 130 ： 氣源 140 ： 質流控制器 150 ： 多孔洞膜之前導物 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） 511230 經濟部智慧財產局員工消費合作社印製 A7 B7____五、發明說明（） 160 : 液流控制器 170 : 注射閥 180 : RF電源 200 ： 化學氣相沉積反應室 210 : 平台 220 : 底材 2 3 0: 氣源 240 ： 質流控制器 250 ： 第一前導物供應源 260 ： 液流控制器 270 ： 注射閥 280: 第二前導物供應源 290 ： 液流控制器 300: 注射閥 3 10 : RF電源 發明詳細說明： 基於積體電路之高積集度的要求，現在半導體業皆縮小元件 內之金屬內連線(Interconnects)的線距。但是縮小元件內之金屬 內連線的線距時，會有嚴重的電阻電容延遲（RC delay)問題，其 中一種解決方法是在金屬內連線間，使用具有低介電常數之介電 材質。 (請先閱讀背面之注意事項再填寫本頁) #裝 訂---- 秦· 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公爱） 511230 A7 B7_ 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 傳統的介電材質爲二氧化矽，其介電常數爲3.9,而空氣的 介電常數爲1.0。因此，降低介電材質的介電常數，除了從材質本 身解決外，亦可從所形成的薄膜結構解決。換言之，只要增加薄 膜內的空氣比例，薄膜整體的介電常數即會大幅降低，亦即，在 薄膜內增加孔洞比例，整個薄膜之介電常數即爲大幅降低。 根據前述，具有低介電常數之多孔洞材質，其多孔洞結構爲 其低介電常數之主要原因。一旦此多孔洞結構崩解，則此材質所 形成之薄膜的介電常數便會大幅回昇，成爲高介電常數。隨著孔 洞結構瓦解之程度越大，介電常數回昇之幅度就會越大。 此種具有低介電常數之多孔洞膜之形成，可分爲二大類：一 爲旋轉塗佈法，一爲化學氣相沉積法。使用化學氣相沉積法時， 由於此多孔洞膜之前導物多爲液態，因此需要使用載氣，將此前 導物載入化學氣相沉積反應室。 然而使用化學氣相沉積法沉積多孔洞膜時，其多孔洞結構往 往受到相當大程度的破壞，甚至是瓦解。究其原因，乃是因爲使 用了載氣而增加了離子濃度所致。 經濟部智慧財產局員工消費合作社印製 傳統方法雖然使用之載氣皆爲鈍性氣體，但是在化學氣相沉 積時，此鈍性載氣受到高能量電子之撞擊，會因此離子化而成爲 離子。特別是單原子之鈍性氣體，諸如氦氣、氬氣等，相較於雙 原子分子，更容易被離子化。如果載氣爲氮氣等之雙原子分子時， 亦可能會解離成爲單原子。 此載氣之離子會大量增加化學氣相沉積反應室內的離子濃 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 511230 A7 B7_ 五、發明說明（） 度，使得甫沉積於底材上之多孔洞膜，遭到離子轟擊的轟擊量大 增，而讓多孔洞膜之材質的交聯（cross-link)程度巨幅提昇，進而 造成孔洞結構的崩解。另外，載氣解離的單原子，會和前導物或 反應後之產物進行反應，形成污染源，使得薄膜品質下降。 因此，本發明的主要目的即是不要使用額外的此種載氣，或 是降低其用量，以降低化學氣相沉積反應室內之離子濃度。爲達 成此種目的，本發明之一個形成具有低介電常數之多孔洞膜的具 體實施例，其陳述如下。 如第一圖所示，在一化學氣相沉積反應室100內之平台上110 置放一底材120,用以將具有低介電常數之多孔洞膜沉積於其上。 由一氣源供應器130供給一氣體，此氣體在此具有雙重功 能，一是作爲反應物，亦即與多孔洞膜之前導物反應，在底材上 形成多孔洞膜；另一是作爲載氣，因爲多孔洞膜之前導物多爲液 態，所以透過此載氣將此前導物載入化學氣相沉積反應室100內。 此氣體流速藉由質流控制器140加以控制，其流速較佳爲介 於約500至1500 seem之間。此氣體流經注射閥170，將汽化之前 導物載運至化學氣相沉積反應室100內。 從前導物供應源150載入一形成此具有低介電常數之多孔洞 膜的前導物。此前導物之流速由液流控制器160加以控制， 其流速較佳爲介於約400至80〇Sccm之間。此前導物經由注 射閥170而汽化，然後藉由載氣被載運至化學氣相沉積反應 室100內。 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----I -----裝--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 511230 A7 B7 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 最後啓動RF電源180，在化學氣相沉積反應室100內 形成一電漿，並在底材120上形成一具有低介電常數之多孔 洞薄膜層。此RF電源180所使用之電源功率較佳爲介於約 3〇〇至800W之間。 上述之具有雙重功能之氣體可以爲氧化劑，例如氧氣、或氧 化氮呢或前述氣體之混合氣體。但以氧化氮爲較佳，因爲氧氣很 容易與前導物進行熱反應，而產生副產物。另外，此氣體亦可由 一種常溫常壓下爲氣態之矽化物，而此氣態矽化物亦爲多孔洞膜 之前導物之一。再者，此氣態矽化物亦可與氧化劑（例如氧氣、氧 化氮）相混合，組成此具雙重功能之氣體。 另外，上述之雙重功能之氣體，亦可混雜有少量之鈍性氣 體，諸如氦氣、氬氣、氮氣、或其任意組合所組成之混合氣體。 此時，作爲反應物兼載氣之氣體，例如氧氣及氧化氮，其流速較 佳爲介於200至600 seem ;鈍性氣體之流速則較佳爲介於約 200 至 400 seem。 依本發明所形成之多孔洞薄膜層，其介電常數可由原本 之2.80，降至2.65以下。. 經濟部智慧財產局員工消費合作社印製 又根據上述之目的，本發明提供另一個形成具有低介電常數 之多孔洞膜的方法。如第二圖所示，在一化學氣相沉積反應室200 內之平台210上置放一底材220，用以將具有低介電常數之多孔 洞瞑沉積於其上。 由一氣源供應器230供給一氣體，此氣體在此具有雙重功 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印” 511230 A7 ___B7_ 五、發明說明（） 能，一是作爲氧化劑，亦即與多孔洞膜之前導物反應，在底材上 形成多孔洞膜；另一是作爲載氣。此氣體可以爲氧氣、一氧化二 氮、或其任意組合所組成之混合氣體。但以一氧化二氮爲較佳， 因爲氧氣很容易與前導物進行熱反應，而產生副產物。 此氣體流速藉由質流控制器240加以控制，其流速較佳爲介 於約500至1500 seem之間。此氣體流經注射閥270、注射閥300, 將汽化之第一前導物與第二前導物載運至化學氣相沉積反應室 200 內。 另外，上述之雙重功能之氣體，亦可混雜有少量之鈍性氣 體，諸如氦氣、氬氣、或是氮氣。此時，此具有雙重功能之氣體， 流速較佳爲介於200至600 seem ;而鈍性氣體之流速則較佳 爲介於約200至400 seem。 由一第一前導物供應源250輸入一形成此具有低介電常數之 多孔洞膜的第一前導物於化學氣相沉積反應室200內。此第一前 導物例如可爲一線形矽化物。其流速由液流控制器260加以 控制，流速較佳爲介於約400至SOOseem之間。此第一前導 物經由注射閥270而汽化後.，藉由載氣被載運至化學氣相沉 積反應室100內。 由一第二前導物供應源280輸入一形成此具有低介電常數之 多孔洞膜的第二前導物於化學氣相沉積反應室200內。此第二前 導物例如可爲一環形矽化物。其流速由液流控制器280加以 控制，流速較佳爲介於約400至800sccm之間。此第二前導 10 張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 511230 A7 _ B7 V. Description of the invention () At the same time, it uses chemical solutions, so the process takes a long time, resulting in a large increase in time cost, which does not meet the requirements of the large output of modern semiconductor manufacturing. Conversely, chemical vapor deposition does not cause the problem of poisoning and peeling of the dielectric window, and its process time is short, so it will become the main technology for thin film processing in the future. Pre-conductors of low dielectric constant porous holes, such as triethyl phosphate (TEPO for short), are mostly liquid substances. Therefore, in the conventional chemical vapor deposition process, a carrier gas is used to load these liquid precursors into a chemical vapor deposition reaction chamber. The commonly used carrier gas is mostly inert gas, such as nitrogen, argon, or helium, among which helium is commonly used. However, when plasma enhanced chemical (PECVD) is used to deposit porous hole materials, the porous hole structure of these porous hole materials often disintegrate to a considerable extent, which is the original porous hole structure. After the film is deposited, it will suffer considerable damage. The pore structure is the main reason why the dielectric constant of the film is lower than that of general dielectric materials, so the collapse of the pore structure will greatly increase the dielectric constant of the film. Therefore, there is a great need to propose a manufacturing method to avoid or reduce the degree of destruction of the porous hole structure. Purpose of the invention and description: The purpose of the present invention is to propose a method that reduces or eliminates the use of inert gas as the 3 paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male — !! .----- -Participation -------- Order --------- § (Please read the notes on the back before filling out this page) Printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 511230 A7 --- --- 2Z_ V. Description of the invention () Carrier gas is a method for depositing a porous hole film with a low dielectric constant to avoid or reduce the degree of destruction of the porous hole structure. According to the above object, the present invention A formation method is proposed. This method first places a substrate in a chemical vapor reaction chamber, and then uses a first reaction gas, which simultaneously serves as a reactant and a carrier gas. Then, a second reaction gas is loaded, It is a liquid at normal temperature and pressure. This second reaction gas uses the aforementioned first reaction gas as a carrier gas, and is loaded into the above-mentioned chemical vapor deposition chamber with a substrate. Finally, the first reaction gas and Second reaction gas in chemical vapor deposition reaction chamber The reaction is performed, and a porous hole film with a low dielectric constant is deposited. According to the above purpose, the present invention proposes another method of forming. This method firstly places a substrate in a chemical vapor reaction chamber, and then uses a first A reaction gas, which simultaneously serves as both an oxidant and a carrier gas. Next, a second reaction gas and a third reaction gas are loaded, and the second reaction gas and the third reaction gas are the carrier gas using the aforementioned first reaction gas, The above-mentioned chemical vapor deposition chamber with a substrate is loaded. Finally, the first reaction gas, the second reaction gas, and the third reaction gas are reacted in the chemical vapor deposition reaction chamber, and a low-k dielectric is deposited. Constant porous film. In view of the above-mentioned object of the invention, through the present invention, it is possible to reduce or not use a passive gas as a carrier gas to reduce the ion concentration in the chemical gas phase reactor, thereby maintaining the porous structure of the film. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 meals) ----------- installed -------- order --------- ( Please read the note on the back first Please fill in this page again) 511230 A7 B7 V. Description of the invention () Brief description of the drawings: In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and With reference to the accompanying drawings, the detailed description is as follows: The first figure is a specific embodiment consistent with the present invention for depositing a porous hole film layer. The second diagram is another specific embodiment consistent with the present invention for depositing multiple layers. Hole film layer. It should be noted that the attached drawings are only typical typical embodiments illustrating the hair plume, and the scope of the present invention is not limited by these additional drawings, and the present invention is still applicable to other equivalent specific Examples, and to improve understanding, the same reference numerals will be assigned to the same elements as much as possible. Drawing number comparison description: ----------- • Installation -------- Order --------- (Please read the precautions on the back before filling this page) Economy Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau 100: Chemical Vapor Deposition Reaction Chamber 110: Platform 120: Substrate 130: Gas Source 140: Mass Flow Controller 150: Pre-Porous Cavity Membrane Guide This paper applies Chinese national standards ( CNS) A4 specification (210 X 297 public meals) 511230 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7____ V. Description of the invention () 160: Liquid flow controller 170: Injection valve 180: RF power supply 200: Chemical vapor phase Deposition reaction chamber 210: platform 220: substrate 2 3 0: air source 240: mass flow controller 250: first lead supply source 260: liquid flow controller 270: injection valve 280: second lead supply source 290: Flow controller 300: injection valve 3 10: RF power supply invention detailed description: Based on the requirement of high integration of integrated circuits, the semiconductor industry has now reduced the line spacing of metal interconnects in components. However, when reducing the line spacing of the metal interconnects in the device, there will be a serious problem of RC delay. One of the solutions is to use a dielectric material with a low dielectric constant between the metal interconnects. (Please read the precautions on the back before filling this page) #Binding ---- Qin · This paper is again applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) 511230 A7 B7_ V. Description of the invention () (Please read the precautions on the back before filling out this page.) The traditional dielectric material is silicon dioxide, which has a dielectric constant of 3.9, and the dielectric constant of air is 1.0. Therefore, reducing the dielectric constant of the dielectric material can be solved not only from the material itself but also from the formed thin film structure. In other words, as long as the proportion of air in the film is increased, the dielectric constant of the entire film will be greatly reduced, that is, if the proportion of pores in the film is increased, the dielectric constant of the entire film will be greatly reduced. According to the foregoing, the porous hole material having a low dielectric constant has a porous hole structure that is the main reason for its low dielectric constant. Once the porous hole structure disintegrates, the dielectric constant of the thin film formed by this material rises sharply and becomes a high dielectric constant. As the hole structure disintegrates, the magnitude of the dielectric constant rises. The formation of such porous hole films with low dielectric constant can be divided into two categories: one is spin coating method, and the other is chemical vapor deposition method. When the chemical vapor deposition method is used, since most of the precursors of the porous hole film are in a liquid state, a carrier gas needs to be used to load the precursors into the chemical vapor deposition reaction chamber. However, when the porous hole film is deposited by chemical vapor deposition, the porous hole structure is often damaged to a considerable extent, or even collapsed. The reason is that the use of a carrier gas increases the ion concentration. The traditional method of printing by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is that the carrier gas used is inert gas. However, during chemical vapor deposition, this inert carrier gas is impacted by high-energy electrons, which will ionize and become ions . Especially monoatomic inert gases, such as helium and argon, are more easily ionized than diatomic molecules. If the carrier gas is a diatomic molecule such as nitrogen, it may dissociate into a single atom. The ions of this carrier gas will greatly increase the ion concentration in the chemical vapor deposition reaction chamber. 7 This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm). Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives. 511230 A7 B7_ V. Description of the invention The degree of the porous hole film deposited on the substrate is greatly increased by the ion bombardment, and the degree of cross-link of the material of the porous hole film is greatly improved. This in turn causes disintegration of the pore structure. In addition, the single atom dissociated from the carrier gas will react with the precursor or the product after the reaction to form a source of pollution, which will cause the quality of the film to decrease. Therefore, the main object of the present invention is not to use an additional such carrier gas, or to reduce the amount thereof, so as to reduce the ion concentration in the chemical vapor deposition reaction chamber. To achieve such a purpose, a specific embodiment of the present invention for forming a porous hole film having a low dielectric constant is stated as follows. As shown in the first figure, a substrate 120 is placed on a platform 110 in a chemical vapor deposition reaction chamber 100 to deposit a porous hole film having a low dielectric constant thereon. A gas is supplied by a gas source supplier 130, and this gas has a dual function here. One is to act as a reactant, that is, to react with the guide in front of the porous film to form a porous film on the substrate; the other is to serve as a carrier. Gas, because most of the conductive material before the porous hole film is liquid, the previous conductive material is loaded into the chemical vapor deposition reaction chamber 100 through this carrier gas. This gas flow rate is controlled by the mass flow controller 140, and its flow rate is preferably between about 500 and 1500 seem. This gas flows through the injection valve 170 and carries the precursor before vaporization into the chemical vapor deposition reaction chamber 100. A precursor is formed from the precursor supply 150 to form the porous hole film having a low dielectric constant. The flow rate of the previous guide is controlled by the liquid flow controller 160, and its flow rate is preferably between about 400 and 80 Sccm. The previous guide is vaporized through the injection valve 170 and then carried into the chemical vapor deposition reaction chamber 100 by a carrier gas. 8 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ----- I ----- installation -------- order --------- (Please read the notes on the back before filling this page) 511230 A7 B7 V. Description of the invention () (Please read the notes on the back before filling this page) Finally, turn on the RF power supply 180 in the chemical vapor deposition reaction chamber 100 A plasma is formed, and a porous hole film layer having a low dielectric constant is formed on the substrate 120. The power of the RF power source 180 is preferably between about 300 and 800W. The above-mentioned dual-function gas may be an oxidant, such as oxygen, or nitrogen oxide, or a mixed gas of the foregoing gases. However, nitric oxide is preferred because oxygen can easily react thermally with the precursor to produce by-products. In addition, this gas can also be a silicide that is gaseous at normal temperature and pressure, and this gaseous silicide is also one of the precursors of the porous cavity membrane. Furthermore, this gaseous silicide can be mixed with oxidants (such as oxygen and nitrogen oxide) to form this dual-function gas. In addition, the above dual-function gas may be mixed with a small amount of inert gas, such as a mixed gas composed of helium, argon, nitrogen, or any combination thereof. At this time, as the reactant and carrier gas, such as oxygen and nitrogen oxide, the flow rate is preferably between 200 and 600 seem; the flow rate of the inert gas is preferably between 200 and 400 seem. The dielectric constant of the porous hole film layer formed according to the present invention can be reduced from 2.80 to 2.65 or less. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs According to the above-mentioned object, the present invention provides another method for forming a porous hole film having a low dielectric constant. As shown in the second figure, a substrate 220 is placed on the platform 210 in a chemical vapor deposition reaction chamber 200 to deposit a porous cavity having a low dielectric constant thereon. A gas is supplied from a gas source supplier 230, and this gas has a dual function. 9 The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 511230 A7 ___B7_ 5. Description of the invention (1) Energy, one is to act as an oxidant, that is, to react with the precursors in front of the porous hole film to form a porous hole film on the substrate; the other is as a carrier gas. This gas can be oxygen, dioxide A mixed gas composed of nitrogen or any combination thereof. Nitrous oxide is preferred because oxygen can easily react with the precursor thermally to produce by-products. The gas flow rate is controlled by the mass flow controller 240 The flow rate is preferably between about 500 and 1500 seem. This gas flows through the injection valve 270 and the injection valve 300 to carry the vaporized first and second precursors into the chemical vapor deposition reaction chamber 200 In addition, the above dual-function gas can also be mixed with a small amount of inert gas, such as helium, argon, or nitrogen. At this time, the dual-function gas should preferably have a flow velocity of 200 to 600 seem; and the flow rate of the inert gas is preferably between about 200 to 400 seem. A first precursor supply source 250 is input to a first precursor that forms the porous cavity film with a low dielectric constant. In the chemical vapor deposition reaction chamber 200. The first precursor may be, for example, a linear silicide. The flow rate is controlled by the liquid flow controller 260, and the flow rate is preferably between about 400 and SOOseem. After the precursor is vaporized through the injection valve 270, it is carried into the chemical vapor deposition reaction chamber 100 by a carrier gas. A second precursor supply source 280 is inputted to form a porous hole film having a low dielectric constant. The second precursor is in the chemical vapor deposition reaction chamber 200. The second precursor may be, for example, a ring-shaped silicide. Its flow rate is controlled by the liquid flow controller 280, and the flow rate is preferably between about 400 to 800 sccm. . This second leading 10-sheet scale applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
511230 A7 五、發明說明（） 物經由注射閥290而汽化後，藉由載氣被載運至化學氣相沉 積反應室200內。 最後，啓動RF電源310,在化學氣相沉積反應室200內形成 一電漿，並沉積多孔洞膜層於底材220之上’而此多孔洞膜具有 低介電常數。 依據上述之本發明方法，可達成下列功效： 1. 減少或不使用鈍性氣體作爲載氣，以減少在化學氣相反應 器中之離子濃度，使得離子轟擊多孔洞膜之轟擊數量亦隨之減 少，進而維持多孔洞膜的多孔洞結構。 2. 因使用鈍性氣體的成本非常高，特別是氦氣與氬氣之原料 價格高昂，所以當不使用鈍性氣體作爲載氣或減少用量時’可大 幅減少原料成本。 3. 因不使用鈍性氣體作爲載氣，或是將鈍性氣體與反應氣體 合在一氣源使用，所以相較傳統技術，可減少氣體供應設備的提 供及使用，因此可減少設備成本。 .如熟悉此技術之人員所瞭解的，以上所述僅爲本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍內。 (請先閱讀背面之注意事項再填寫本頁) ΛΈ tr--------- 經濟部智慧財產局員工消費合作社印製 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）511230 A7 V. Description of the invention After the object is vaporized through the injection valve 290, it is carried into the chemical vapor deposition reaction chamber 200 by the carrier gas. Finally, the RF power source 310 is activated, a plasma is formed in the chemical vapor deposition reaction chamber 200, and a porous hole film layer is deposited on the substrate 220 ', and the porous hole film has a low dielectric constant. According to the method of the present invention described above, the following effects can be achieved: 1. Reduction or non-use of inert gas as a carrier gas to reduce the ion concentration in the chemical vapor phase reactor, so that the number of ions that bombard the porous cavity membrane will follow The porous structure of the porous film is reduced, thereby maintaining the porous film. 2. Because the cost of using inert gas is very high, especially the raw materials of helium and argon are expensive, so when the inert gas is not used as the carrier gas or the amount is reduced, the material cost can be greatly reduced. 3. Because the inert gas is not used as the carrier gas, or the inert gas and the reaction gas are used in the same gas source, compared with the traditional technology, the supply and use of gas supply equipment can be reduced, and the equipment cost can be reduced. As understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention Equivalent changes or modifications should be included in the scope of patent application described below. (Please read the precautions on the back before filling this page) ΛΈ tr --------- Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 11 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)