508646 Α7 Β7 五、發明說明（） 發明領域： 本發明係有關於一種除氣罩，特別是有關於一種位於 晶圓製程群組機台（cluster tools)之負載閉鎖室（load lock) 内之除氣罩。 發明背景： 淺溝槽隔離（shallow trench isolation; STI)係在 0·25μπι 以下世代用來產生場氧化層（field oxide)之半導體製程技 術。利用此製程技術所產生的溝槽之底部一般都具有直 角。然而，對於邏輯製程而言，則往往會如第1圖所示， 利用例如電漿蝕刻技術將基材1 〇蝕刻出溝槽2〇 ,且溝槽 20具有弧形3 0之外觀。此具有弧形3 0的外觀之溝槽20 並不能僅以一次蝕刻製程即可完成，而需以如第2A圖至第 2E圖所繪示之製程方能完成。首先，如第2a圖所示，以 微影製程在基材1 〇上形成具有孔洞50之光阻4〇 ^接著， 如第2B圖所示，以光阻4〇為罩幕，蝕刻部分之基材1 〇 以形成孔洞60。接著，在孔洞60的側壁形成如第2C圖所 示之保護層70且形成孔洞80，其中此保護層7〇之材質例 如可為石夕氧溴化物（SiOBr)。接著，如第2D圖所示，以保 護層70與光阻40為罩幕，蝕刻部分之基材1 〇以形成孔洞 9 0 α接著，在孔洞9 〇的側壁形成如第2 e圖所示之保護層 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） (請先閱讀背面之注意事項再填寫本頁) ---------訂--------- 經濟部智慧財產局員工消費合作社印製 508646508646 Α7 Β7 V. Description of the invention () Field of the invention: The present invention relates to a degassing hood, and in particular to a method for removing the load in a load lock chamber of a cluster tool of a wafer process. Hood. BACKGROUND OF THE INVENTION: Shallow trench isolation (STI) is a semiconductor process technology used to generate a field oxide for generations below 0.25 μm. The bottom of the trenches produced by this process technology generally has a right angle. However, for the logic process, as shown in FIG. 1, the substrate 10 is etched into the trench 20 by using, for example, plasma etching technology, and the trench 20 has the appearance of an arc of 30. The trench 20 with an arc-shaped appearance of 30 cannot be completed by only one etching process, but can be completed by the processes shown in FIGS. 2A to 2E. First, as shown in FIG. 2a, a photoresist 4 with a hole 50 is formed on the substrate 10 by a lithography process. Next, as shown in FIG. 2B, the photoresist 40 is used as a mask. The substrate 10 forms a hole 60. Next, a protective layer 70 and a hole 80 are formed on the sidewall of the hole 60 as shown in FIG. 2C. The material of the protective layer 70 may be SiOBr. Next, as shown in FIG. 2D, the protective layer 70 and the photoresist 40 are used as a mask, and the base material 10 is etched to form a hole 9 0 α. Next, the sidewall of the hole 90 is formed as shown in FIG. 2 e Protective layer 2 This paper size applies to Chinese National Standard (CNS) A4 specification (210 X 297 meals) (Please read the precautions on the back before filling this page) --------- Order ---- ----- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 508646
100且形成孔洞105’其中此保護層100之材質例如可為石) 氧漠化物。然後，反覆進行上述如第2D圖與第2E圖之步 驟，再將光阻40以及保護層70與保護層1〇〇等保護層= 除即可形成近似第i圖所料之具有弧形_外觀之 20 〇 9 上述在基材1 〇上形成保護層且旌刻出所需外觀之溝 之製程例如可以晶圓製程群組機台（cluster tools)來完成 所謂群組機台，係將數個晶圓製程單元結合成為一製程 台’以利高效率之先進半導體製程。群組機台一般意指 模組化之多反應室之整合製程系統。典型的群組機台通 包括一中央晶圓處理真空室以及數個週邊真空製程反 室。矽晶圓在不同的真空製程反應室中經歷一連串的製 步隸而不需暴露在大氣中。晶圓在進行不同製程時的傳 係由也隨時維持在真空之晶圓處理真空室來加以管理。 於群組機台則是提供低缺陷且高良率之晶圓製造。 (請先閱讀背面之注意事項再填寫本頁} 訂--------- 經濟部智慧財產局員工消費合作社印製 群組機台之製程平台通常包括至少兩個連接至中央晶 圓處理真空室的不同開口之負載閉鎖室（load lock)，用以裝 載與卸載晶圓，且可使中央晶圓處理真空室依然維持在真 空狀態。請參考第3圖所緣示之習知晶圓製程群組機台之 上視圖。第3圖繪示晶圓匣丨10正置於負載閉鎖室丨12内。 當負載閉鎖室1 1 2與緩衝室（即上述中央晶圓處理真空 本紙張尺度適用中國國家標準（CNS)A4規格（210乂 297公釐） 508646 A7 B7" 五、發明說明（ 室）132間的夾長閥（未繪示）打開時，置於晶圓匣110内的 晶圓116可以機械手臂13〇移進緩衝室132中。機械手臂 130亦可使晶圓116在圍繞緩衝室132之各製程反應室136 間移動。晶圓1 1 6可根據實際需要的半導體結構在一個或 數個製程反應室1 3 6中進行任意次數的製程或冷卻步驟。 凊參考第4圖所繪示之習知晶圓製程群組機台之負載 閉鎖室、緩衝室、與負載埠之側視示意圖。晶圓丨丨6在處 於大氣壓力之如潔淨室之外部環境與處於高度真空之製程 環境中移動時，負載閉鎖室丨丨2係用以定位晶圓丨丨6。可 上下垂直移動的晶圓匣承載座（incjexer)2i〇係用以承載晶 圓£ 11 0。負載閉鎖室門2 i 6係用以將晶圓匣i i 〇由負載 埠（load port)220上的晶盒230中裝載進入負載閉鎖室112 中’或是將晶圓匣1 1 〇由負載閉鎖室]i 2中卸載至負載埠 220上的晶盒230中。當負載閉鎖室1 12與緩衝室132間 的狹長閥218打開時，緩衝室132中的機械手臂130可伸 進負載閉鎖室11 2中以抓取或放下晶圓1 1 6。 (請先閱讀背面之注意事項再填寫本頁) 訂-------！· 經濟部智慧財產局員工消費合作社印製 請再參考前述第2A圖至第2E圖。在基材10上形成保 護層70與保護層1〇〇等保護層之製程可在上述群組機台中 進行。保護層70與保護層1 〇〇等保護層之材質例如可為矽 氧溴化物《當第4圖中的晶圓匣1 1 〇中的全部晶圓丨丨6完 成製程時，負載閉鎖室門2 1 6必須打開，以利晶圓匣1 1 0 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公f ) 508646 經濟部智慧財產局員工消費合作社印製 A7 _ B7 _ 五、發明說明（） 由負載閉鎖室1 12中卸載至負載埠220上的晶盒230中。 此時負載閉鎖室Π 2内係與大氣相通，導致保護層之矽氧 溴化物與大氣中的水氣反應而產生溴化氫（HBr)氣體與二 氧化矽（Si〇2)固體。溴化氫氣體容易腐蝕負載閉鎖室1 12 與負載埠220的元件，使被腐蝕的元件成為微粒污染的來 源。'一乳化碎固體則直接以粉末的形式亦造成嚴重的微粒 問題。 發明目的及概述： 鑒於上述發明背景中，習知負載閉鎖室中的晶圓匣之 全部晶圓完成製程時’負載閉鎖室門必須打開以便晶圓£ 可由負載閉鎖室中卸載至負載埠上的晶盒中，因而使負載 閉鎖室内與大氣相通’導致保護層之矽氧溴化物與大氣中 的水氣反應而產生溴化氫氣體與二氧化矽固體，進一步造 成腐姓與微粒之缺點’因此本發明之一目的為提供一種除 氣罩’可用以將由晶圓表面所產生的溴化氫氣體與二氧化 矽完全排出至負載閉鎖室外。 本發明之另一目的為提供一種除氣罩，可用以減少落 至晶圓上的微粒。 本發明之又一目的為提供一種除氣罩，可用以避免負 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公餐） (請先閱讀背面之注意事項再填寫本頁)100 and forms a hole 105 ', wherein the material of the protective layer 100 may be, for example, a silicon oxide oxide. Then, repeatedly perform the steps as shown in FIG. 2D and FIG. 2E, and then divide the photoresist 40, the protective layer 70, and the protective layer 100 and other protective layers = to form an arc with a shape similar to that of the i-th figure. The appearance of 20 009 The above-mentioned process of forming a protective layer on the substrate 10 and sculpting the grooves of the desired appearance can be completed by a wafer process group tools (cluster tools) to complete the so-called group tools. Each wafer process unit is combined into a process table to facilitate high-efficiency advanced semiconductor processes. The group machine generally refers to a modularized multi-reaction chamber integrated process system. A typical group machine includes a central wafer processing vacuum chamber and several peripheral vacuum process chambers. Silicon wafers undergo a series of steps in different vacuum process reaction chambers without being exposed to the atmosphere. Wafer transfer in different processes is managed by a wafer processing vacuum chamber that is also maintained in a vacuum at any time. In the group machine, wafer manufacturing with low defects and high yield is provided. (Please read the precautions on the back before filling out this page} Order --------- The process platform of the printed group machine of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs usually includes at least two connected to the central wafer Load locks for different openings of the vacuum chamber are used to load and unload wafers, and the central wafer processing vacuum chamber can still be maintained in a vacuum state. Please refer to the conventional wafer process shown in Figure 3 The top view of the group machine. Figure 3 shows the wafer cassette 丨 10 is being placed in the load lock chamber 丨 12. When the load lock chamber 1 12 and the buffer chamber (that is, the above-mentioned central wafer processing vacuum is applicable for this paper size) Chinese National Standard (CNS) A4 specification (210 乂 297 mm) 508646 A7 B7 " V. Description of the invention (chamber) The clamp valve (not shown) between 132 is opened, the wafer placed in the wafer cassette 110 116 can move the robotic arm 130 into the buffer chamber 132. The robotic arm 130 can also move the wafer 116 between the process reaction chambers 136 surrounding the buffer chamber 132. The wafer 1 1 6 can be placed in a semiconductor structure according to the actual needs. Or several process reaction chambers 1 3 6 Any number of processes or cooling steps. 凊 Refer to the side view of the load lock chamber, buffer chamber, and load port of the conventional wafer process group machine shown in Figure 4. The wafers are at atmospheric pressure. For example, when the external environment of the clean room is moved in a high-vacuum process environment, the load lock chamber 丨 2 is used to position the wafer 丨 丨 6. The vertical and horizontal vertical cassette holder (incjexer) 2i〇 is used To carry the wafers £ 11 0. The load lock chamber door 2 i 6 is used to load the cassette ii 〇 from the crystal box 230 on the load port 220 into the load lock chamber 112 'or to load the wafer. The cassette 1 1 〇 is unloaded from the load lock chamber] i 2 into the crystal box 230 on the load port 220. When the narrow valve 218 between the load lock chamber 112 and the buffer chamber 132 is opened, the robot arm in the buffer chamber 132 is opened 130 can be inserted into the load lock chamber 11 2 to grab or lower the wafer 1 1 6. (Please read the precautions on the back before filling out this page) Order -------! · Intellectual Property Bureau staff, Ministry of Economic Affairs For printing by consumer cooperatives, please refer to the aforementioned figures 2A to 2E. Formed on the substrate 10 The protective layer 70, the protective layer 100, and other protective layer processes can be performed in the above group of machines. The protective layer 70 and the protective layer 100 and other protective layers can be made of, for example, silicon oxybromide. All the wafers in the cassette 1 1 〇 丨 6 When the process is completed, the load lock chamber door 2 1 6 must be opened to facilitate the cassette 1 1 0 4 This paper size applies to China National Standard (CNS) A4 specifications (210 x 297 male f) 508646 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _ B7 _ V. Description of the invention () Unloaded from the load lock chamber 1 12 to the crystal box 230 on the load port 220. At this time, the load lock chamber Π 2 is in communication with the atmosphere, which causes the silicon oxybromide of the protective layer to react with the water vapor in the atmosphere to generate hydrogen bromide (HBr) gas and silicon dioxide (SiO2) solids. The hydrogen bromide gas easily corrodes the components of the load lock chamber 1 12 and the load port 220, so that the corroded components become a source of particulate pollution. 'Emulsified crushed solids also cause serious particulate problems directly in powder form. Object and Summary of the Invention: In view of the above background of the invention, when all wafers in a conventional cassette in a load lock chamber are completed, the load lock chamber door must be opened so that wafers can be unloaded from the load lock chamber to the load port. In the crystal box, the load lock chamber is communicated with the atmosphere, which results in the reaction of the silicon oxybromide in the protective layer with the water vapor in the atmosphere to produce hydrogen bromide gas and silicon dioxide solids, further causing the shortcomings of the name and particles. One object of the present invention is to provide a degassing hood, which can completely discharge hydrogen bromide gas and silicon dioxide generated from the wafer surface to the load lockout room. Another object of the present invention is to provide a degassing hood that can be used to reduce particles falling on a wafer. Another object of the present invention is to provide a degassing hood, which can avoid negative 5 paper sizes applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 meals) (Please read the precautions on the back before filling this page)
經濟部智慧財產局員工消費合作社印製 508646 A7 B7_ 五、發明說明（） 載埠與負載閉鎖室產生腐蝕現象。 依據本發明之上述目的，因此本發明提供一種除氣 罩，適用於將晶圓製程群組機台之負載閉鎖室中由晶圓匣 之晶圓的表面所產生之物質排出至負載閉鎖室外，其中此 除氣罩至少包括：主體，具有向下之開口，且此除氣罩在 使用前負載閉鎖室之晶圓匣承載座必須上升並與此開口的 邊緣之0環密合；排氣管，穿過負載閉鎖室並連接至主體； 進氣管，穿過負載閉鎖室並連接至主體；空氣，自進氣管 流進除氣罩中；以及複數個加熱器，安裝於除氣罩的主體 之外壁。 圖式簡單說明： .本發明的較佳實施例將於往後之說明文字中辅以下列 圖示做更詳細的闡述，其中： 第1圖係繪示習知用於邏輯製程之淺溝槽隔離之具弧 形外觀之溝槽； 第2A圖至第2E圖係繪示習知用於邏輯製程之淺溝槽 隔離製程； 第3圖係繪示習知晶圓製程群組機台之上視圖； 第4圖係繪示習知晶圓製程群組機台之負載閉鎖室、 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508646 A7 B7_ V. Description of the invention () The port and the load lock chamber are corroded. According to the above purpose of the present invention, the present invention provides a degassing hood, which is suitable for discharging the substances generated from the surface of the wafer of the wafer cassette in the load lock chamber of the wafer processing group machine to the load lock chamber, The degassing hood at least includes: the main body, which has a downward opening, and the wafer cassette carrier of the load lock chamber before use must be raised and fit tightly with the 0 ring of the edge of the opening; the exhaust pipe Through the load lock chamber and connected to the main body; air intake pipe through the load lock chamber and connected to the main body; air flows from the intake pipe into the deaerator hood; and a plurality of heaters installed on the deaerator hood The outer wall of the main body. Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following diagrams, where: Figure 1 shows a shallow trench that is conventionally used in logic processes. Isolated trench with curved appearance; Figures 2A to 2E show the conventional shallow trench isolation process for logic processes; Figure 3 shows the top view of the conventional wafer process group machine; Figure 4 shows the load lock chamber of a conventional wafer process group machine. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)
T ϋ el n J ，· aw I aw·· I mm I I 經濟部智慧財產局員工消費合作社印製 508646 A7 B7 五、發明說明（） 緩衝室、與負載埠之側視示意圖； 第5圖係繪示本發明之一較佳實施例之除氣罩之剖面 圖；以及 第6圖係繪示習知負載閉鎖室與本發明之一較佳實施 例之除氣罩之剖面示意圖。 圖號對照說明： 10 基 材 20 溝 槽 30 弧 形 40 光 阻 50 孔 洞 60 孔 洞 70 保 護層 80 孔 洞 90 孔 洞 100 保 護 層 105 孔 洞 110 晶 圓 匣 112 負 載 閉 鎖 室 116 晶 圓 130 機 械 手 臂 132 緩 衝 室 136 製 程 反 應 室 210 晶 圓 匣承載座 216 負 載 閉 鎖 室門 218 狹 長 閥 220 負 載 埠 230 晶 盒 300 除 氣 罩 310 主 體 315 開 σ 320 排 氣 管 330 進 氣 管 340 加 执 器 350 0 環 360 箭 號 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------- 丨訂-----------r (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 508646 A7 B7_ 五、發明說明（） 370箭號 發明詳細說明： 本發明係有關於一種置於晶圓製程群組機台之負載閉 鎖室内之除氣罩，適用於將晶圓製程群組機台之負載閉鎖 室中由晶圓匣之晶圓的表面所產生之物質排出至負載閉鎖 室外，其中此物質例如可為溴化氫氣體或二氧化矽粉末。 請參考第5圖所繪示之本發明之一較佳實施例之除氣罩之 剖面圖。第5圖中之除氣罩300包括主體310、排氣管320、 進氣管330、加熱器3 40、以及Ο環350等元件。主體310 之形狀例如可為中空且下表面具有開口 3 1 5之長方體，然 不限定於此。只要能達成本發明所具有的功能之任何形 狀，皆在本發明之範圍内，例如主體3 1 0之形狀亦可為中 空且下表面具有開口 315之圓柱體。排氣管320與進氣管 330分別連接至主體310的適當位置而與主體310的内部 空間相通，係用以分別將由晶圓（未繪示）的表面所產生之 物質如箭號3 60所示排出至負載閉鎖室（未繪示）外與將潔 淨之空氣如箭號370所示引進主體310的内部空間，其中 此空氣的溼度例如可為約50%至約80%。加熱器340安裝 於主體310之外表面，用來提高主體310的内部空間之溫 度，以確保晶圓的表面所產生的溴化氫氣體不致凝結成液 體並降低二氧化矽粉末對負載閉鎖室與負載埠（未繪示）之 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） <請先閱讀背面之注意事項再填寫本頁) Γ ' · -11 n n flu ϋ9 fl·— n J : 1 I n n βϋ el·— n n 1 言 508646 Α7 Β7 五、發明說明（） 附著性。0環35〇位於主體310的開口 315之邊緣，用以 當晶圓昆承載座（未繪示）與除氣罩3〇〇接合時可達成氣密 之功能。以下以第6圖說明本發明之除氣罩之實際運作情 形。 經濟部智慧財產局員工消費合作社印！^ 咕參考第6圖所緣示之習知負載閉鎖室與本發明之一 較佳實施例之除氣罩之剖面示意圖。本發明之除氣罩係置 於負載閉鎖室H2中較負載閉鎖室門216更高之位置，並 以排氣官3 20與進氣管3 3 0穿越負載閉鎖室i丨2頂面之外 牆而與外界相通且可以適當方法使整個除氣罩固定不動。 如刖面習知所述，當晶圓匣丨丨〇中的全部晶圓丨丨6完成製 程時，負載閉鎖室門216必須打開，以利晶圓匣11〇由負 載閉鎖室112中卸載至負載埠（未繪示）上的晶盒（未繪示） 中。此時負載閉鎖室112内係與大氣相通，導致晶圓n 6 上的石夕氧溴化物與大氣中的水氣反應而產生溴化氫氣體與 二氧化矽粉末。溴化氫氣體容易腐蝕負載閉鎖室i i 2與負 載埠的元件，使被腐姓的元件成為微粒污染的來源。二氧 化矽固體則直接以粉末的形式亦造成嚴重的微粒問題。因 此，置於晶圓匣承載座21 0上的晶圓1 1 6與晶圓匣承載座 210 —起上升至晶圓匣承載座210的上端之邊緣與除氣罩 之0環350緊密接合。如此一來，即可啟動抽氣功能，將 除氣罩之主體310内的漠化氫氣體與二氧化石夕粉末如箭號 3 60所示透過排氣管32〇排出至負載閉鎖室112外。在排 <請先閱讀背面之注意事項再填寫本頁) 訂---------· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 508646 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（） 氣管320進行排氣功能的同時，空氣亦時時如箭號370所 示透過進氣管330提供至除氣罩内，以使除氣罩内維持適 當之壓力。 上·述除氣罩内之抽氣功能除可將二氧化矽粉末抽離負 載閉鎖室1 1 2外，更可將溴化氫氣體完全排至負載閉鎖室 1 1 2外。根據實際測試，進行抽氣例如約5分鐘左右，即 可將除氣罩内原來濃度例如約為9ppm之溴化氩氣體完全 抽至負载閉鎮室Π 2外。如此便可杜絕溴化氩氣體腐蝕機 台元件之問題。值得一提的是，晶圓1 1 6上的矽氧溴化物 並非會全部與環境中的水氣反應而產生溴化氫氣體與二氧 化石夕粉末。實際上，僅有晶圓丨丨6之矽氧溴化物的表層會 與水氣反應。一旦會與水氣反應之矽氧溴化物所產生的溴 化氫與二氧化矽被完全抽離，則即使晶圓丨丨6上尚有矽氧 溴化物’也不會再與環境中的水氣產生反應。 此外，加熱器340係用來提高除氣罩内的溫度。此舉 具有兩個用途。第一個用途為可確保除氣罩内的溫度高於 漠化^的彿點，使溴化氫氣體不致凝結成漠化氫液體而造 成更嚴重的腐姓。第二個用途為可降低二氧化石夕粉末對機 台元件或晶園m的附著性，藉以減少可能發生的微粒。 綜合上述，本發明之一優點為提供一種除氣罩，可用 10 本紙張尺度適用中國國家標準（CNS)A4規格(210x 297^7 (請先閱讀背面之注意事項再填寫本頁) SK.------- 丨訂---------^5^^丨 508646 A7 B7_ 五、發明說明（） 以將由晶圓表面所產生的溴化氫氣體與二氧化矽完全排出 至負載閉鎖室外。 本發明之另一優點為提供一種除氣罩，可用以減少落 至晶圓上的微粒。 本發明之又一優點為提供一種除氣罩，可用以避免負 載埠與負載閉鎖室產生腐蝕現象。 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐）T ϋ el n J, · aw I aw ·· I mm II Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508646 A7 B7 V. Description of the invention () Side view of the buffer chamber and the load port; Figure 5 is a drawing A sectional view of a deaerator hood according to a preferred embodiment of the present invention is shown; and FIG. 6 is a schematic sectional view of a conventional load lock chamber and a deaerator hood according to a preferred embodiment of the present invention. Comparative description of drawing number: 10 substrate 20 groove 30 arc 40 photoresistor 50 hole 60 hole 70 protective layer 80 hole 90 hole 100 protective layer 105 hole 110 wafer box 112 load lock chamber 116 wafer 130 robot arm 132 buffer chamber 136 Process reaction chamber 210 Wafer carrier 216 Load lock chamber door 218 Slim valve 220 Load port 230 Crystal box 300 Degassing hood 310 Main body 315 Open σ 320 Exhaust pipe 330 Intake pipe 340 Controller 350 0 Ring 360 Arrow The paper size of this paper applies to China National Standard (CNS) A4 (210 X 297 mm) ---------- 丨 Order ----------- r (Please read the Please fill out this page again) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 508646 A7 B7_ V. Description of the invention () Arrow 370 Detailed description of the invention: The present invention relates to a load placed on a wafer processing group machine The degassing hood in the lock chamber is suitable for the substances generated from the surface of the wafer of the wafer cassette in the load lock chamber of the wafer processing group machine. It is discharged to the outside of the load lock, where the substance can be, for example, hydrogen bromide gas or silicon dioxide powder. Please refer to FIG. 5 for a cross-sectional view of a degassing hood according to a preferred embodiment of the present invention. The degassing hood 300 in FIG. 5 includes elements such as a main body 310, an exhaust pipe 320, an intake pipe 330, a heater 340, and an O-ring 350. The shape of the main body 310 may be, for example, a rectangular parallelepiped which is hollow and has an opening 3 1 5 on the lower surface, but is not limited thereto. Any shape that can achieve the functions of the invention is within the scope of the invention. For example, the shape of the main body 3 10 may be a cylinder with a hollow surface and an opening 315 on the lower surface. The exhaust pipe 320 and the intake pipe 330 are respectively connected to appropriate positions of the main body 310 and communicate with the internal space of the main body 310. They are used to separate substances generated from the surface of the wafer (not shown), such as arrow 3 60. The air is discharged to the outside of the load lock chamber (not shown) and clean air is introduced into the inner space of the main body 310 as shown by arrow 370. The humidity of the air may be about 50% to about 80%, for example. The heater 340 is installed on the outer surface of the main body 310 to increase the temperature of the inner space of the main body 310 to ensure that the hydrogen bromide gas generated on the surface of the wafer does not condense into a liquid and reduce the load of the silicon dioxide powder on the load lock chamber and The paper size of the load port (not shown) applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) < Please read the precautions on the back before filling this page) Γ '· -11 nn flu ϋ9 fl · —N J: 1 I nn βϋ el · — nn 1 508 646 Α7 Β7 5. Description of the invention () Adhesion. The 0 ring 35 is located at the edge of the opening 315 of the main body 310, and is used to achieve the airtight function when the wafer holder (not shown) and the degassing cover 300 are joined. The actual operation of the degassing hood of the present invention will be described below with reference to FIG. 6. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs! ^ Refer to the cross-sectional schematic diagram of the conventional load lock chamber shown in Figure 6 and the degassing hood of a preferred embodiment of the present invention. The degassing hood of the present invention is placed at a higher position in the load lock chamber H2 than the load lock chamber door 216, and passes through the top surface of the load lock chamber i 丨 2 with the exhaust officer 3 20 and the intake pipe 3 3 0. The wall communicates with the outside world and the entire degassing hood can be fixed in an appropriate way. As mentioned in the previous description, when all wafers in the wafer cassettes are completed, the load lock chamber door 216 must be opened to facilitate the unloading of the wafer cassette 11 from the load lock chamber 112 to In the crystal box (not shown) on the load port (not shown). At this time, the load lock chamber 112 is in communication with the atmosphere, which causes the stone oxybromide on the wafer n 6 to react with the water vapor in the atmosphere to generate hydrogen bromide gas and silicon dioxide powder. Hydrogen bromide gas is liable to corrode the components of the load lock chamber i i 2 and the load port, so that the components of the rotting family become a source of particulate pollution. Silica solids also cause serious particulate problems directly in the form of powder. Therefore, the wafer 1 16 placed on the cassette holder 21 0 and the cassette holder 210 are raised up to the edge of the upper end of the cassette holder 210 and tightly joined to the ring 350 of the degassing cover. In this way, the suction function can be activated, and the hydrogenated desert gas and the powder of the dioxide of dioxide in the main body 310 of the degassing hood are discharged to the load lock chamber 112 through the exhaust pipe 32 as shown by the arrow 3 60. . (Please read the notes on the back before filling in this page) Order --------- · This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 508646 Wisdom of the Ministry of Economic Affairs A7 printed by the Consumer Cooperative of the Property Bureau V. Description of the invention () While the air pipe 320 performs the exhaust function, the air is also provided into the deaeration hood through the intake pipe 330 as shown by arrow 370, so that the deaerator hood Maintain proper pressure within. In addition to the suction function in the air hood, the silicon dioxide powder can be removed from the load lock chamber 1 1 2 and the hydrogen bromide gas can be completely discharged to the load lock chamber 1 1 2. According to the actual test, evacuation is performed for about 5 minutes, for example, the original concentration of the argon bromide gas in the degassing hood, for example, about 9 ppm, can be completely pumped out of the load closed chamber Π 2. In this way, the problem of argon bromide gas corrosion on machine components can be eliminated. It is worth mentioning that not all of the silicon oxybromide on the wafer 1 16 will react with the water vapor in the environment to produce hydrogen bromide gas and dioxide powder. In fact, only the surface layer of silicon oxybromide on the wafer 6 will react with water vapor. Once the hydrogen bromide and silicon dioxide produced by the silicon oxybromide that will react with water vapor are completely separated, even if there is still silicon oxybromide on the wafer, it will no longer be in contact with the water in the environment. The gas produces a reaction. In addition, the heater 340 is used to increase the temperature inside the degassing hood. This has two purposes. The first purpose is to ensure that the temperature inside the degassing hood is higher than the Buddha's point of desertification ^, so that the hydrogen bromide gas will not condense into a desertified hydrogen liquid and cause a more severe rot name. The second purpose is to reduce the adhesion of stone dioxide powder to machine components or crystal garden m, thereby reducing possible particles. To sum up, one of the advantages of the present invention is to provide a degassing hood, which can be used in 10 paper sizes to comply with Chinese National Standard (CNS) A4 specifications (210x 297 ^ 7 (please read the precautions on the back before filling this page) SK.- ------ 丨 Order --------- ^ 5 ^^ 丨 508646 A7 B7_ V. Description of the invention () To completely exhaust the hydrogen bromide gas and silicon dioxide generated from the wafer surface to The load is locked outdoors. Another advantage of the present invention is to provide a degassing hood that can be used to reduce particles falling on the wafer. Another advantage of the present invention is to provide a degassing hood that can avoid the load port and the load lock chamber Corrosion phenomenon occurs. As will be understood by those familiar with this technology, the above description is only a preferred embodiment of the present invention and is not intended to limit the scope of the patent application for the present invention; all others without departing from the spirit disclosed by the present invention Equivalent changes or modifications completed should be included in the scope of patent application below. (Please read the notes on the back before filling out this page.) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Mark Standard (CNS) A4 (210 x 297 mm)