TW508379B - Binart controller for crystal body - Google Patents

Abstract

A binary controller for a crystal body used for a single crystal pull-up production method represented by the Czochralski method for converging the crystal growth diameter and the seed lift speed to their desired values. The seed lift speed controlled variable (SLC) and the temperature controlled variable (TC) are generated independently of each other on the basis of the deviation signal (DEV) of the diameter control parameter. As a result, the seed lift speed acts on the convergence of the crystal growth diameter, and the temperature controlled variable suppresses the variation of the shortage of heat energy and converges the seed lift speed varied by the convergence action of the crystal growth diameter. Hence the binary control of both the crystal growth diameter and the seed lift speed are preferably achieved.

Description

U8379

The effective value of the two numerical control device is to represent and pull up to become and pull up. Various effective liquid heating heaters (hereinafter, single crystal I) condensed crystal diameter of the various types of heaters. Convergence will pull up the single knot to the important speed of the single crystal, and the result can be achieved. It is referred to as the temperature interface. It is called that the latent heat weight per unit solid corresponds to the temperature, and it is solidified at the desired speed. Achievement of control. [Know-how] The diameter of the single crystal manufactured in the czakowski method (cz) is used to determine the quality of the single crystal. Therefore, in the past, the development of the CZ method of the value of the diameter was in progress. Method of implementation. These developed features can achieve special representative features. The first technique is to control the growth diameter of the single crystal only by changing the melting. Because the difference between the pull-up single crystal and the amount of heat flowing into the interface can be controlled, the 'insufficient heat' is related to the determined amount (hereinafter, referred to as "cured weight_ If the insufficient heat is increased, the single weight is obtained. As a result, the single crystal The growth becomes larger. Therefore, if the increase is increased or decreased, the growth of the single crystal can be directly in the technology, because it can be set, especially, the value of the second control of the crystal to control the speed of the manufacturing method of the crystal Parameters: Both parties converge on the expectations that there are several types that have been unique, indicating the temperature of these heaters, and the reason for the change is the amount of heat released, and "insufficient heat"). The weight solidified by time is tight and tight, so the amount of underheating is reduced only to increase the weight by more than the expected value. Set at the expected value,

7054-2811-PFl.ptc Page 4 2001.12. 06. 005 Watch 379, Amendment No. 88U7857 V. Description of the invention (2) = object of manufacture: mouth, only one, and then slowly pull up the manufacture of the single crystal: In j, the structure is relatively easy to stabilize. In the following, the control of the insufficient heat focusing on the first technology is referred to as "the temperature control suppresses the adjustment of the pulling speed above the growth diameter of the second crystal to make its results, based on the deviation from the expected value. The deviation of the pull-up speed varies in degree. In this technology, because the chasing diameter technique changes immediately, so the characteristic is compared to the aforementioned control system of the -technical diameter as "speed control; pull = change, which is called detailed control" The second technology Ψ AB is made by the ground + ^, and the second technology Ψ AB is provided by Japanese Patent Gazette No. 52-481 1 1 and Japanese Patent Gazette No. 7-55878. A third technology is the growth of a single crystal The pulling speed above the diameter comes from the rational phase type that derives the heater temperature from the beginning to the end of the pull-up: 2 Based on the ideal type of the derivation, to control the insufficient amount; ϊ :: ί 术 :: Because the speed can be adjusted The control system and the temperature control system are independent to make it possible to adapt to the respective control system. [Problems to be solved by the invention] Variation:: Chi i ί: The system s uses the so-called heater temperature change ρ. Therefore, Xixi work system, With respect to the change in diameter, yttrium [and therefore, in this technology, the production of #a ^ produced on a single crystal, #fine, expensive, calcium, fluorine, etc.-not suitable For the production of Shi Xi, etc., which has a fast pull-up speed. In terms of the second technology is the current mainstream technology, if based on this technology 7054-281l-PFl.ptc Page 5 2001.12. 06. 006 508379

V. Description of the invention (3) Correction technique 'The growth diameter of a single crystal can be appropriately controlled by changing the pull-up speed. This is because the response to the change in diameter of the pull-up speed is smaller than the response to the change in temperature of the heater. The time constant of the invalid time and the primary delay is smaller, so the operation of the pull-up speed can be reflected in the diameter. Of convergence action. The speed control of this second technique is composed of "proportional term + integral term + differential term" in the case of optical type. In the case of the weight formula, it is composed of "", proportional term + differential term ". Here, any of the integral term of the optical type and the proportional term of the heavy summer type are elements of the history in response to the diameter change of the single crystal, and the speed control is performed when the thermal environment is constant so that The constant deviation of the value converges to a 0-shaped transfer function (the definition of the shape of the transfer function is described later). Therefore, the diameter of a single crystal that is equal to or equal to the target can converge to the target value without a steady deviation by the change of the pull-up speed. rfq The pulling speed is doubled to the target and the target value of the profile for single crystal is directly tied to the and value, but the value controls the curing of the heater. In other words, the area and the function diameter and the upper diameter are the goals. This series of temperature and weight is based on the pull-up speed, so the pull speed value is the crucible, although the two degrees of the crucible still depend on the degree of the pull-up speed. The target value determined by the speed position will have a solid component, but the actual value will change the deviation. That is, the diameter value deviates, and the degree of change is also determined to be insufficient. When the weight distribution does not make the solidification weight solidify the weight dimension, the result, although it is converged so that the quantity cannot be reached cannot affect the quantity, so the single crystal quantity converges to the desired pull-up speed.

508379 Amend η Case No. 88117RR7 £, Invention Note (4) becomes biased. In a general pull-up device, the crucible is raised at the same time as the pull-up. 2 The liquid level of the melt is controlled as a certain level. This is because the crucible is constantly changing due to the rise of the crucible, so it cannot be maintained. This means that the pull-up speed tracks the change of insufficient heat :: There is a deviation. Here, because the position of the hanging net determines the number of single crystals = =, it cannot be used as the diameter and pull-up speed of the single crystal: the control device. < Here is the degree 'In the above-mentioned conventional technique, the diameter of a single crystal is converged by adopting a cascade connection to Susaki Gold + A ^ m: Γ 糸', and α * yields The composition of the deviation of the pull-up speed. The cascade control system: the deviation of the speed of 1 is input to the temperature control system, and the pid operation is performed at this temperature in ', and the temperature of the heater is controlled. However, in the above cascade control system, no matter how to perform the rigging, there is still a so-called error problem in the "pull-up speed": explain it in detail, and pull on top of the level-fixed control. 11; ί ϊ 做 理 马 马 马 寻 w Ma 寻 find the temperature of the heating benefit of the machine m ^ The temperature pattern of the heating benefit becomes a function of more than one value (slope field ΓΓΓ: can be considered as the target. In the case of π /-# jt, the system has a constant * deviation 'in the one-shape control system and an unsteady deviation in the -shape control system. In Japanese Patent Gazette No. 5?, the weight deviation is input into the PID. Operation I ^ 5 has cascaded control. ^ The cascade of the Gan Yunyi amplifier and the plD operational amplifier, and the output is given as a heating. The cascade control system constitutes a jealousy: / phoenix = dumb work. Therefore , Forming control, so the weight deviation has a fixed

508379

Here, even if the weight deviation has a constant length deviation, if the weight deviation is constant, the diameter of the single crystal does not have a constant deviation. Therefore, it can be seen that in the above-mentioned conventional technology, the "proportional term + differential term" of the weight deviation is used as the operation amount of the pull-up speed, so the proportional element causes the constant deviation to occur at the pull-up speed, resulting in Numerical control is the cause of failure. On the other hand, in Japanese Patent Gazette No. 7-55878, which discloses another cascade control, the diameter deviation is input to the cascade control of the speed control system and the temperature control system composed of a two-stage piD operational amplifier, and This output is given as an operation amount as a heater temperature. Therefore, although it can be considered that the control system constitutes a dimorphic control system because of the deviation in diameter, the diameter system of the single crystal does not have a constant deviation, but the inventor can confirm that the control system has a pull-up speed based on experiments. The deviation. Because the transfer function of the temperature control system is the above-mentioned cascade control =, and the operation amount of the heater temperature is matched with the ideal heater temperature type jade state, such as a linear function, it can be understood that the pull-up speed is often accompanied by Steady deviation. This system can be considered as the deviation of the pull-up speed from the target value with a steady deviation. 3 Reason: In the proper configuration, it can be regarded as the integral factor system of the speed control system that causes the binary value control to fail. In order to solve the above problem, although it may be considered that the temperature control system is provided with 2 to 3 stages of integration elements (delay elements), so that the pull-up speed converges to the target, ^ However, in this way, the temperature control system is provided with multiple stages of delay elements. Gu Yi The problem of so-called beeping (unstable control). In this second technique, temperature control is dependent on speed.

Case No. 88117857 V. Description of the invention (6) The structure of the control system, that is, the temperature connection, so that the number systems that are most suitable for the temperature control system are different from each other, and therefore belong to the constraints of the temperature control system. On the one hand, there are shortcomings in the ideal form of existence. That is, there are many ideal types of single crystal devices. Therefore, even if it is in the state, it cannot use the control transfer function that is suitable for the difficult 0 degree control system. The third technology is to measure the temperature without freedom. Therefore, the thermal loop state will be changed from the other equipment and speed of the device. Control systems have difficulty cascading. In short, the reason is that the transfer function control system suitable for the speed control system is used as the compliance system of the speed control system by the composition of the speed control system. 'Because the control of insufficient heat is based on the so-called soil system that is weaker in adapting to environmental changes. The mother and one device are all different. Because the situation of the type deviation that is derived first is the ideal type that obtains a suitable result, the practicality is difficult. Moreover, the export of the ideal type is due to the need to report more. It is also difficult for each device to make the ideal type. For example, it is made but is affected by the setting of the parts in the furnace when it is pulled up, the time of heating the pot, the temperature of the water, and the temperature, etc. . Type deviation. Μ㊣ The pull-up speed of single crystals is not only different in the size of the direct pressing region of each single crystal, but also varies in the variety produced. The ideal form of the multiplication part of U ... necessary. In addition, the change in time is necessary to make small changes in the ideal form, and iteratively derives the above-mentioned desired form. The user deviates from the ideal pattern as described above, and the lack of heat becomes 1 text.

508379

No. 88117857 V. Description of the invention (7) The reason for f is due to the lack of heat. When the chestnut says that the growth diameter of the dry day-day vendor brings the second day of the day, the long-day diameter will deviate from the target value, and the target value will be changed, and the pull-up speed will be changed. The diameter converges to the second dry value + 軚 value, but the Ren pull speed deviates from the target value, which is different from the previous one. It becomes impossible to achieve the two numerical control of diameter and speed. As follows. The point, it becomes a system, the value control of I, the single body is controlled by the diameter and the pull-up speed, and the curing weight is made a certain function: a function of more than two times. Because of the fact that the diameter and the pull-up speed do not have a proper function, the transfer function that acts on the pull-up speed needs to be more than two-shaped. The test must be sin but i, because the weight deviation signal is based on its own The body has the integral of the diameter = so about the diameter ㈣ 'for the weight deviation signal if :: i of f] can be considered f, for the diameter element to form a two-shaped control system. The former control system is for the diameter or the diameter element, and Constitutes two-shaped ϊ The function of the constant deviation of the diameter. 'No structure 2', the transfer function from the pull-up speed depends on the shape of the control system, and consider the control of the shape. Because of the% 'deviation in the pull-up speed, and i The so-called first problem common to conventional technology students is that the pulling speed has a steady deviation.

508379 Case No. 88117 Zhan 7 V. Description of the invention (8) And there is an integral element of the transfer function system of the speed control system, which is known as Mu3. There is a pull-up speed to control the second: :: iPID is a level Connected to the first fixed value control piD. ： 2, there will be a second question about the interference between D and ±. consider

In the previous β t ΐ π t device, it was based on the above-mentioned second fixed-value control p 1D pulling speed view transfer function, and constituted from above: it is a two-form control system. Of course, in the right product eight: to consider the transfer function to form a three-shape, and the delay due to ϊιίίί. Therefore, it can be considered that the control system is unstable, and there will be a buzzing sound. Qiao + Nuo's Single List: The Original :: The purpose is to achieve a stable two numerical control in order to provide effective numerical control of one of the early sun bodies. [Apparatus for solving the problem] It is based on the invention (10) described in item 1 of the scope of the patent application: "speed = amount generating device (M10)", which generates a single crystal operation amount and generates fi (M1 ^ The operating amount of the lifting speed (SL); and the temperature, strict h, p, set (M12), to produce the operation around the single crystal (10)

Since the day Li, the diameter (GD) and seed crystal ascent rate (sl) have converged to each (M14). The detection of the diameter, surname, and sign includes: diameter control parameter detection device, diameter control parameter, diameter growth parameter (GD), Control the parameters of contribution, that is, "less () ·" and the deviation signal generating device (Ml 6), before taking out

7054-2811-PFl.ptc Page 11 2001.12. 06.012

The deviation signal (DEf) is generated by the difference between the diameter control parameter (CP) detected by the direct control control parameter detection device (M 丨 4) and the target value of the & direct control control parameter (cp). The operation amount generating device is based on the deviation signal (DEV) generated by the deviation bluff generation device (M16), and generates the operation amount of the μ liter speed (SL) on the seed crystal, that is, the seed ascent speed operation amount (SLC), The temperature operation amount generating device (M12) generates the temperature operation amount (TC) based on the deviation signal (DEV) generated by the deviation signal generating device (M16).

Furthermore, the invention described in item 2 of the scope of patent application is the invention described in item 1 of the scope of patent application, characterized in that the aforementioned seed crystal raising speed operation amount generating device (M10) is responsive to the foregoing without containing The transfer function of the elements of the change history of the crystal growth diameter (GD) is expressed, and the signal based on the change of the aforementioned deviation signal (DEV) is output as the aforementioned seed crystal rising speed operation amount (SLC); the aforementioned temperature operation amount is generated The device (M12) is expressed by a transfer function containing integral elements, and outputs a signal based on the history of the aforementioned deviation signal (DEV) as a temperature operation amount (TC).

Furthermore, the invention described in item 3 of the patent scope of Shengu is described in item 2 of the scope of patent application. The invention is characterized in that the diameter control parameter (CP) is the weight grown by the single crystal (10). That is, the seed crystal growth weight (GW); the aforementioned seed crystal rising speed operation amount generating device (M1) is expressed by a transfer function of a differential element; the aforementioned temperature operation amount generating device (Ml 2) is based on a transfer function containing an integral element It is expressed in paragraph i. Moreover, the invention described in the fourth scope of the application for patent is the invention described in the second scope of the application, characterized in that:

7054-281l-PFl.ptc Page 12 2001.12. 06.013 ^ m379

2 (^ P) is the aforementioned crystal growth diameter (GD); in the aforementioned seed crystal rising speed operation, the green device (M10) is expressed by a transfer function containing a proportional element; 2 the temperature operation amount generating device (Ml2) is included Expressed in two stages of the transfer function of the integral element. Pass the sand mountain ice, and the invention described in item 5 of the scope of the patent application is the invention described in the patent application Capricorn, the item 1 is characterized in that: the seed crystal ascending speed operation amount generating device (Ml 0) The ratio of the transfer function to the transfer function of the aforementioned temperature-operating-amount generating device (Ml 2) constitutes a control system of two or more shapes. ^ The invention described in item 6 of the scope of patent application is a patent applicant, and the invention described in item 5 is characterized in that the aforementioned seed crystal raising speed operation amount generating device (MlO) is The diameter control parameter (cp) of the diameter component has a proportional element, a differential element, and a combination of these to select the composition ', and the solidified weight for the insufficient heat is distributed into the cross-sectional area of the single crystal (10) and the single crystal (10) 2 components of pull-up length. ^ The invention described in item 7 of the scope of patent application is the invention described in item 5 of the scope of patent application, characterized in that the aforementioned diameter control parameter (CP) is the weight grown by the single crystal (10), that is, Seed growth weight (/ w); The aforementioned seed crystal rising speed operation amount generating device (M10) is expressed by a transfer function including a differential element; the aforementioned temperature operation amount generating device (Ml 2) is a transfer including an integral element One paragraph of the function. ^ Moreover, the invention described in item 8 of the scope of the patent application is the invention described in item 5 of the patent application, which is characterized in that the aforementioned diameter control parameter (cp) is the aforementioned crystal growth diameter (GD); The aforementioned seed crystal ascending speed operation amount generating device (M10) is expressed by a transfer function containing a proportion element;

508379

Case No. 88117857 V. Description of the invention (11) The aforementioned temperature operation amount generating device (Ml 2) is represented by the second segment of the #function which contains integrals. The transfer of Ge Jing [Inventive embodiment] (Summary of the invention) The characteristics of the present invention are based on the deviation signal 0 £ ^, and the operating amount SLC and the temperature operating amount Tc are respectively increased at the rate of seed crystal growth. In other words, H, the crystal growth diameter gd & following the change in the seed crystal rising speed SL: convergence, and the lack of heat = suppression following the change in heater temperature are performed independently. Therefore, the growth rate of seed crystals depends on the convergence of the crystal growth diameter GD, and the temperature operation amount Tc suppresses the fluctuation of the non- :, so that the convergence effect of the crystal growth diameter GD is equal to the convergence rate of the two crystals. As a result, the numerical control of the crystal growth diameter GD and the seed rate = the rising speed SL was appropriately achieved (see the table of FIG. 3 (invention procedure). The inventor passed the procedure shown below, + the above-mentioned conventional problems The issue date is reached to achieve the solution ... First of all, as a factor that is affected by the change in the growth diameter of a single crystal (hereinafter referred to as "She Yuecheng? Ί ="), it can be considered as a single: :: Death pull Speed (hereinafter referred to as "seed crystal ascending speed SL"), and insufficient heat. "Here, the" seed crystal ascending speed SL "depends on the parameters of the moving mechanism that raises the seed crystal (hereinafter," ί Ϊ crystal "), It is a parameter that is relatively difficult to change. It is difficult to do this with a spoon. The lack of heat is based on the distance between the crucible and the heater, the setting state of the parts, and the cooling water that cools the parts in the hot area. ^ =

508379 a Correction ^ 1 ^ 88117857 V. Description of the invention (12) The change of chemistry is more than interpolation. Compared with the kind of rising speed SL, the main reason for the change in the variable foot heat K which changes ^^ length ^ diameter 系 is that it is assumed that the structure of insufficient heat is not used, and the change based on crystal growth is used to control The temperature change JJ: J f is based on the use of a so-called heater, and the control device is relatively new. Therefore, only when the structure is equal to =, "the change in the crystal growth theory i-speed change i: upper: Feng: the hole is used to make it: the rate of rise SL in accordance with the change in the crystal growth diameter ⑼. However, it is necessary to raise the seed crystal in the single-crystal two-value control and two-value Γ page. The speed sl converges to the predetermined value: the numerical control of the two crystals of the upper two crystals, to make the crystal growth diameter GD ”species / liter speed SL converge to the desired goal # value is important. The rapid production si value μ is retrograde In the above thinking procedure, as long as the seed crystal rises directly to Pgd :: the reason for the mesh value ', then the reason for the change in the seed crystal ascent speed SL to suppress the k-movement of crystal growth GD will be understood. Furthermore, = a retrograde The thinking process, we know the crystal growth diameter gd The change is caused by the change of insufficient heat. Therefore, if the change of insufficient heat is eliminated, the crystal growth diameter GD converges to the target value. As a result, it is expected that the seed crystal rise rate 乩 will also converge to the goal; ^ value. In other words, when the crystal growth diameter G 0 is consistent with the target value, the seed crystal rising speed SL also becomes consistent with the target value. That is, the second numerical control of the single crystal can be achieved., Page 15 2001.12. 06.016 508379 __ Case No. 8811781 Article __ V. Description of the invention (13) Therefore, according to the change in the crystal growth diameter GD, if the seed crystal rising speed SL and insufficient heat are changed independently, the crystal growth diameter GD and Both sides of the seed crystal rising speed SL converged to a desired value. Secondly, "the present inventor reviewed how to change the seed crystal rising speed" and obtained the following conclusion. That is, because the seed crystal rising speed SL is controlled by two values. Control items, it is best to apply the operation amount of the seed crystal ascending speed (hereinafter referred to as "seed crystal ascending speed operation amount 31 ^") to the elements of the divergence direction Operation should be contained in an amount of generation block. As elements that act in the direction of divergence, those who consider them are elements that respond to past changes in history, that is, "proportion elements of heavy I deviation" and integral elements. Therefore, the generation block of the 'seed rising speed operation amount SLC is suitably constituted by using as a differential element and a proportional element. The appropriate combination method of the differential element and the proportional element has some differences between the weight type and the optical type, and the specific structure will be made clear by the following description. ,, K, ', κ, the present inventors reviewed how to change the insufficient calories, and obtained the following conclusions. That is, the main cause of insufficient heat fluctuation is the rise of the crucible, because as soon as the crucible rises, it is away from the heater by only the rising portion, and as the supply of heat to the melt decreases, self-exhaustion and dazzling The body releases heat. Therefore, in order to suppress the fluctuation of insufficient heat, it is necessary to raise the temperature of the heater of only the rising portion of the crucible. The rationale of the aforementioned heater temperature = derived from: this point of view can control the lack of heat; = a ^ And, as before, because only in the ideal type, it is easy to be affected by the change of% environment , ~ With the dependence on not only the ideal type

508379

In order to find the structure that can replace the ideal type, H Ping carefully reviews the derivation method of the ideal type. The results are shown below. =, In the following description, the growth of single crystals is performed under a certain liquid level, and the temperature of the crucible in the formation of single crystals is a cross-sectional view showing the positional relationship in a general pull device. As shown in the figure, the crucible 14 containing the melt 12 is provided with a supply of heat 12 for four weeks. Therefore, in this system, the heat of 'is supplied from the heater 16 toward the melt 12 and the heat of QOUT is released from the single crystal 10, the solution 12, and the crucible 14. Taking the height of the hangover 14 as L 'and the height from the top of the heater 至 to the top of the hangover 14 as X, the thermal resistance between the heater 16 and the hangover 14 can be expressed as follows: ·· ( 0, where: KIN = supply-side proportionality constant. In addition, the thermal resistance between crucible 14 and the air around the crucible 14 can be expressed by the following formula: U,-(2), here: κ〇 ϋτ = discharge side proportional constant. Therefore, the thermal conductivity of the supply side and the discharge side are as follows.

7054-2811-PFl.ptc Page 17 2001.12. 06.018 508379 Case No. 88117857 Rev. V. Description of Invention (15) Under:

Gm = L — X… (3) G〇ut: X… ⑷ ^ ουτ. Therefore, taking the temperature of the heater 16 as TH and the temperature of the crucible 14 as Tc, the heat QIN supplied from the heater 16 to the crucible 14 and the heat Qqut emitted from the crucible 14 are as follows:

2 Grab = GW. CTff-D •• (5) —X) · (7g ~ = ΈZ

Qout ~ ^ out 'X ·

K

As described in OUT. Therefore, insufficient heat is defined by the following formula: Q = Qour -QW… ⑺. Next, consider the change in heat when the crucible 14 rises. That is, X is only

7054-2811-PFl.ptc Page 18 2001.12. 06.019 508379 _ Case No. 88117857 V. Description of the invention (16) Annual correction △ QIN and Q〇UT change amount when X changes △ QIN and △ Q〇UT can be downloaded Formula: △ 2solen =… (8) LQqut:: Τ〇 · Δχ jr OUT ……. (9). Here, as long as QIN and Qqut are changed only by ΔQIN and ΔQqut, the shortage of heat changes. Therefore, in order to suppress this fluctuation at the temperature of the heater 16 to satisfy the following equation: It is necessary. Then, Equation 7 is removed from Equation 10, and the above equations are expanded to form the following equation: And in the morning, when it is substituted into formula 3, formula 8, and formula 9 ’, it becomes τα, ΤΗ

J .Δχ: The form of L-χ (12), and then expand this further, we get the following formula:

7054-281l-PFl.ptc Page 19 2001.12. 06. 020 508379 Case No. 88117857 Month_Amendment V. Description of the invention (17) • (13) Δχ ΑΤη

Tc

1 OUT J

TH form. So 'integrate this formula' to get the following formula: > + log (x-i) + logC = 0-(14) OUT /, where: C = integral constant. Furthermore, expand this formula to get the following formula K,

The form of OUT. Therefore, if x is 0 and TH is taken as TQ, and C in the above formula is solved, it becomes as follows: C: \ T〇 ^ Tc

Production OUT

L ⑽ form. Therefore, substituting this formula into Formula 15 gives the following formula that can represent the ideal type of heater temperature: ^

7054-281l-PFl.ptc Page 20 2001.12. 06.021 Correction

Invention Description (18)

L

^ OUT -out J \ J〇 + Tc

K

OUT K〇UT One K shot (17)

The form of OUT. Figure 2 shows the door fixing diagram. Therefore, the ideal form of the heater temperature represented by Equation 17 is: :: = 'The ideal form of the heater temperature has a curve that rises as a function of the rising temperature.彳 πCr Here, the general range of the range from -0.2 · L to 0.4L is shown in the figure. Therefore, the range around the pull-up of two collars H 0.4L is the maximum; the range is based on the ideal type of the device temperature and the following formula: It can be understood that the set of linear functions of heating TH = cxx + b is here. Hair type is available reverse. The following shows its first. If the input system of the former crystal growth diameter GD becomes the following, it is called "the deviation is as above, os) can be approximated, that is, the clearer can be considered considering the above-mentioned ,,,, and shape distinction. The feed control system: to generate the temperature process of L: shape difference approximation. The mold cable can achieve this structure. In the present invention, the variation is used to control the shortage. The horse system adopts the crystal growth and temperature control according to the knot. Signal DEV "). The signal of I momentum (in terms of the crystal growth diameter GD _, the main cause of the change is insufficient heat 508379 _ Zhong 88117857 month, day, day 5 correction, the change of invention description (19) ', and the main cause of the change of insufficient heat is the rise of the crucible Therefore, each time the phase exhaustion rises, the above-mentioned deviation signal DEV will have a positive value. Here, the inventor has considered and if the positive value of the deviation signal DEV is added as a change history, it can be generated. The aforementioned temperature model, through many simulations and experiments, becomes effective by functionalizing the integral value of the deviation signal DEV as the aforementioned temperature model. Therefore, the temperature model generated by the deviation signal DEV is absorbed. Pull the changes in the environment 'and integrate itself into various ideal models in a multi-change environment. It has nothing to do with the difference between the diameter control parameters (generally, the diameter and weight of a single crystal), as long as a unified concept The control concept of the present invention will be described below. The first system is constituted by a control system in which the transfer function according to the diameter is dimorphic. The second system is based on the control function of the pull-up speed as a two-shaped control system, and the optimal weight of the degree control system is straight, the temperature control and even the third control function of the first control point. It is a function suitable for the control of the length of the system. The minimum number of segments that are entered in the fourth series of the system is as follows. The degree control system of the present invention and the first configuration described above are based on the above-mentioned observation system, and the appropriate state is changed. The product allocated to the single crystal diameter component is used to control the diameter control system. The invention of Ancheng, the purpose of the weight-matching temperature control system is to say, the area of the pull-up speed body and the pull-up sub-elements. In order to realize the deviation of the parameters, the 'integral elements are set to a fixed state.

508379 Amendment Λ_η Case No. 88117857 V. Description of the invention (20) The technology of the development of the numerical control of early crystals. (First type) This type of sad example does not have the structure of parallel input of the deviation signal DEV. = 3 is a map showing the first type of the second type of numerical control shock of the present invention and the first type of Xiong Cheng's thought map. Hereinafter, the single J-body 10 of the present invention will be described based on the same figure, which is the object produced by the present invention, and various single crystals produced by pull-up. In the present invention, the crystal growth rate SL of the early solar body 10 will be converged to a desired value when the crystal growth rate of the early solar body 10 and the early crystal 10 grow. When the solution grows, the solution 12 will be crystallized at I k 12 when the single crystal 〇〇, Fen ^ early, and 纟 口 日 日 硅 are used. / Ding Cong, combined to produce the melt. Hanging pot 1 4 is a container that holds the melt. 2-Generally, the amount of solidification of single crystals is increased by using the stacking of quartz hanging pots. The position is u, so it can be controlled according to the outline of the control from the outside by controlling the supply of the melt 12 with the peripheral control signals of the heater 16 and the exhaustion 14. Like. + /, To explain simply, the distance between the heater 16 and the hanging pot 14 is ‘two or two’. By hanging on the hanging pot 14 the amount of heat should be reduced, and the amount of insufficient heat will be increased. 1 ^ Acupoint is used to solidify the melt 12, while the crystal growth diameter GD is changed; A ;: Crystal 10 becomes easy to understand the change, so that 7054-2811-PFl.ptc 23rd stomach 2001 · 12.06.024 Said correction_ # 号 88117857 V. Description of the invention (21) The temperature of the sub heater 16 rises, and the insufficient heat converges to a predetermined value. The seed crystal 18 is a crystal of a single crystal seed. When the single crystal is formed, first, the seed crystal 18 is immersed on the surface of the melt 2 and the Guhai surface is quietly rotated and pulled upwards. Perform the "negative indexing of the root neck". Thereafter, the seed crystal 18 is pulled up on the two seed crystals at a predetermined rate! The speed seed is pulled up, and a single "θ1" is formed below the seed crystal 18. 〇Growth. The early crystal 10 is when the seed crystal 18 touches the melt 12, and the melt == seed crystal 18 and loses heat. As a result, the liquid is refined below the seed crystal 18. At this time, the early crystal 10 is based on the seed. The crystal orientation of crystal 18 grows. The seed crystal 18 is raised by the winding action of the cable barrel 24 through the seed crystal chuck 20. U is at the line, see 22, and # 测 装置 M14 系For the aforementioned crystal growth diameter ⑼ ΐΐΐ wide parameter, that is, the diameter control parameter CP is detected, and the test cp system can use the heart ==. As the diameter control parameter growth weight II and = = Eclipse Tiandandan tablets, Japan 丨Day-to-day growth diameter ⑶. These parameters can be measured using the weight sensor 26 and the diameter sensor 28, respectively. # ^ „1〇ad re-tester, on the one hand," 直 #_ 里 J 的 载 机电The length measuring device of the formula. 1 Wen Feng S knows the example, and the deviation signal generating device M16 takes the diameter control clip = the diameter control parameter cp and the diameter control Detecting the parameter cp ^ 4 are means generates a difference error signal DEV, and output means for generating a surface temperature in the 7054-2811-PFl.ptc mounted on ~ 24 2001-12.06.025 seed rising speed of the operation amount value

The diameter control parameter “CP target value” is the deviation M12. Specifically, the signal DEV. Here, in the case of measuring GW, it is the aforementioned direct parameter CP and the desired target value of the body 10 is "memory of crystal growth. Therefore, the corresponding crystal formation number corresponds.

When it is used as the diameter, it is in the diameter control parameter, so that the diameter is to correspond to the length GL ", and enter in the long length GL

For the production parameter CP, the target value of the weight CP when a single crystal 10 is grown in a desired shape using a crystal growth weight. On the other hand, in the case where the diameter-controlled crystal growth diameter GD is used, it is a target value of the aforementioned diameter control parameter CP of a single crystal. The set value of the length of the single crystal 10 (hereinafter, referred to as) is used as a program parameter, and the value of the deviation signal generating device M16 is tested in advance, and the value of the test is determined according to the aforementioned program parameters. The seed crystal ascending speed operation amount generating device M10 generates an operation amount of the seed crystal ascending speed SL based on the deviation signal DEV generated by the aforementioned deviation signal generating device M16 (hereinafter, referred to as "seed crystal ascending speed operation amount SLC"). ).

The seed crystal ascent speed SL is the same as the target value of the aforementioned diameter control parameter. 'The desired target value is associated with the crystal growth length GL and stored in advance. Therefore, the target value of the seed crystal ascent speed 上升 is stored. The seed crystal ascent speed operation amount SLC is subtracted. The seed crystal ascent speed SL is determined. The cable barrel 24 is wound around the cable 22 based on the determined seed crystal ascent speed SL. As a result, the seed crystal 18 and the single crystal 10 is raised at the seed crystal rising speed SL. Here, because the seed crystal rising speed SL is a two-valued control pair

t Therefore, it is necessary to make convergence to the target value as soon as possible. Therefore, it is important that the seed crystal ascending speed operation device M10 not contain the elements of the change history in response to the crystal growth diameter GD. That is, the reason is that the element that responds to the change history of the crystal growth diameter GD is that even if the crystal growth diameter GD changes only once, thereafter, because the constant value is continuously output, the seed crystal rising speed 乩 becomes the temperature operation amount generating device M12. The deviation signal DEV generated by the deviation signal generating device M16 generates an amount for operating the temperature around the single crystal 10 (hereinafter, referred to as "temperature operation amount Tc"). The generation of the operation amount π at this temperature is based on the integration element as explained in the aforementioned invention program. The reason is that: 'The temperature of the heater 16 which absorbs changes in the environment is preferably generated as a temperature operation amount TC. Therefore, the ideal type of the heater temperature is derived in advance without memorizing the corresponding crystal growth length GL in advance. The above-mentioned temperature operation amount Tc is an ideal type of the heater temperature that is integrated with itself. In addition, the present invention is not an ideal type except for the auxiliary use of a previously derived heater temperature. That is, in the present invention, the temperature of the heater 16 can also be determined by adding the heater temperature previously calculated in advance to the temperature operation amount TC. By doing so, the change in the crystal growth diameter ⑼ becomes a critical part. For example, suitable control systems such as initial shoulder search and shoulder drop can be expected. Here, as long as the connection type of the seed crystal raising speed operation amount generating device M10 and the temperature operation amount generating device 2 shown in FIG. 3 is focused, these are connected in parallel to the deviation signal generating device M16. Based on this, I will examine whether the parallel connection structure rises with the crystal growth diameter G D and the seed crystal.

2001.12. 06. 027 / y __88117SR7 One day five 'invention description (24) Speed S, L two numerical control is effective. The number is used as the (fr T type: the transfer function (s) of the above-mentioned high-speed interpolating amount generating device 1410, and V is the transfer function of the I two-degree operation quantity generating device 1112. The transfer function is regarded as the U-shift function G (s) and Gt (s) / Gv (s): by definition. The difference is the f difference signal DEV as E (s), diameter control parameter ^ The text is R (s), then the deviation transfer function is given by the formula 1 (19) ... (20) 1 + G (s) described below. Therefore, the fixed-length deviation is given by the following formula ^ l + G (s ) To show. The type of the == two invention procedures to explain, considering the reason of the heater temperature, if the type becomes hot, it can be considered to be based entirely on the type. Therefore, the change in diameter (S) can be It is approximated by a linear function. Let R (s) be expressed by a linear function. Since it becomes W, the formula is 7054-2811-PFl.ptc Page 27 2001 · 12 · 06 · 〇28 508379 Case No. 88117857 V. Description of the invention ( 25) 2 0 series can use the following formula lim --- lim ------- h〇1 + G (s) lim --- s ^ s- G (s) lim · 1 ^ sG (s) (21) Therefore, the G (s) where the constant deviation ε converges to 0 must satisfy the following formula σ (0 = + + C〆 + β〆 ... ^ ^ + B2s + C2s2 + D2sl-2) • (22), D1, D2 = Laplacian taken out by Laplacian's intentional variables here does not contain Ai, A2, Bi, , C !, C2 Any variable of the true symbol S; χ = a multiplier that can be obtained from the above-mentioned arbitrary operation symbol S. In the present invention, the multiplier X corresponding to the Laplacian operation symbol s will be controlled The form of the system is defined as X. For example, a control system with χ = 2 is a two-form control system, and a control system with χ = 3 is a three-shape control system. Therefore, if a control system with more than one shape is formed, the steady deviation converges to 0, which can be achieved by the numerical control of the crystal growth diameter GD and the seed crystal rising speed 讥. In other words, °

508379 Case number 88117857 V. Description of the invention (26) The numerical control system related to the second aspect of the present invention can be said to be a parallel two-form control system. Therefore, with regard to the seed crystal rising speed operation amount generating device M10 and the temperature operation amount generating device 2, the “material deviation signal generating device is connected in parallel, and“ 1¾ ”is controlled with the ratio of these transfer functions to be more than two. System to determine the respective transfer function. According to the first form of the present invention described above, since the seed crystal is raised, the degree of operation amount SLC and the temperature operation amount TC are just produced based on the deviation signal, and the seed crystal ascent rate is regarded as the crystal growth diameter GD. Convergence device 敛 Convergence 2? The temperature of the heater can be used as the seed crystal rising speed SL and the knife can be used independently. As a result, 彳 彳 integrates it to achieve… the value of the growth diameter GD and the seed crystal ascent rate 乩 is held down. Then, t =: If the deviation signal DEV is input in parallel to the speed control system and the pulse control system, the fitness function can be used independently #, so IA & 6 6 points SI system Transfer and use, so it can be a stable two numerical control. I brother one type) t invention of the invention: type system, exemplify the applicable possibility of weight type pull-up. 4 = 4 is a block diagram showing the second numerical control device of the second type of the present invention. The structure of the present invention will be described below based on the same figure (a). It should be noted that the above-mentioned standards are given the same-symbols and explanations are omitted, and the following description is different from the first type in the following description. The diameter parameter detection device M14 uses the crystal growth weight Gw as the 4 control parameter CP to detect it, and outputs the detected value to the deviation signal 508379 _ζι Case No. 88117857 Amendment V. Invention description (27) No. generating device M16. The deviation signal generating device M16 generates a diameter control parameter to detect the difference between the crystal growth weight detected by the M14 and the value of the crystal growth weight (referred to as "weight deviation GWDj"), and generates the difference; The volume deviation GWD is output to the seed crystal ascending speed operation mass production operation amount generating device Ml 2. The straight μ degree seed crystal ascending speed operation amount generating device M10 is set to include the differential term Πΐίϊί 'and will change according to the thinner weight The signal is output as the rising speed operation amount SLC. The seed crystal rising speed is operated ^: The reason why the generating device M10 is constituted by a differential element is as described in the aforementioned invention for the seed crystal rising speed SL as a crystal growth The diameter GD convergence device is used. That is, as long as the crystal growth diameter GD-changes, the growth rate of crystal growth weight follows the change ', and the variation of the weight is tracked It means that the crystal growth is directly affected by k, and if the seed crystal 2 speed SL ′ is changed according to the change of the weight deviation GWD, the crystal growth can be converged to = partial to the grasping weight. The deviation of GWD changes, and the output is based on the change of the knife U ', so it is suitable as a seed crystal rising speed operating device. Here,' it needs to be noted that the seed crystal rising speed SL is controlled by a two-value control. The change in the seed crystal ascending speed SL must be based on the change rate of the weight deviation GWD as 0 and immediately return the ascending speed SL to the target value. Therefore, as long as the target is returned 7054-2811-PFl.ptc page 30 2001.12. 06. 031 508379 Amendment ΛΜ 88117 ^ 7 V. Description of the invention (28) The value is 5: If the time is longer, it will affect the quality of the single crystal 10. Kishi Yusha said that the seed crystal ascending speed operation amount generating device 0 is not ideal because it contains elements with a change history of plastic == diameter GD. Because V: is in the direction that diverts the seed crystal's rising speed sl. Yu Zhongzhuo; A: I is the integral element of the shai element, and Proportional factors. 'The integral value calculation of the weight deviation GWD is performed using the θ knife element system in one day, and the proportional factor system works as follows. Overall: Period 2: Difference G w D system and crystal growth weight G w are Single crystal 10 by crucible 14 The signal generated when the values are compared. The increase in the amount of insufficient heat caused by solidification is increased per unit hour. That is, the weight deviation GWD is increased. The speed operation amount generation device M i 〇 is small. The operation of raising the lit degree of the lion raises the weightless bias Λ 掸 Γ. This gradient is between 0 (the seed crystal rises ΐ i in the result ') and the value of the weight deviation is accumulated. Ϋ I main SGWD is increased between the long pull-up times, such as a step-like change between = (see Figure 6 (a)). In the figure, the length of the long straight drain and the seed crystal rising speed gauge are numerically controlled. The weight deviation GWD thus increased is taken as 0, so that the crystal example is harder and the seed crystal rising speed converges to the target value. important. The ratio makes the weight deviation GWD converge to the direction of 0, which can cause unnecessary changes in the daily rising speed SL. As long as the matter is described from another point of view, even if the weight deviation is not 7054-2811-PFl.ptc page 31 2001.12. 06.032 emperor 88117 Zhan 7 to show. On the one hand 5. Invention description (29) _ is 0, but if the weight deviation GWD gradient system converges to the target value. Therefore, if it is not 0 ', the history of the crystal growth diameter GD is compensated. At this issue date = Medium weight deviation GWD traces back to the past GWD's history is the pull-up procedure later 'is formed to report at this weight deviation. The reason for determining the operating quantity of temperature is that the temperature operating quantity generating device 2 expresses it, and the reason for generating the quantity based on the weight deviation function is to include the integral element for 12 reasons as described in the aforementioned invention, Tian Yi 40 A said that the clerk explained about the mad cat, about the / Ware degree # 作 1Generation device M i 2 is a micro-defective treasure, the product of the door knife and the scale elements of the product door do not become different . As shown in the figure, it can be used as a piD. The system checks whether the structure of the second type constitutes a production control transformation of two or more forms. 'Τ is described in the following description: κν = speed conversion constant, κτ = temperature two = hang number, TDV = speed Control system differential time, Tdt = Temperature control system differential time, τ = ν = Speed control system integration time, Tit = Temperature control system integration time αν = Speed control system differential coefficient, and “Strict temperature control system differential coefficient. First consider And the complete differentiation of the transfer function core (s) of the seed crystal ascending speed operation amount generating device, then Gv (S) can be expressed by the following formula < u ... (23) because GT (s) is p I]), so Become as follows

508379 Case No. 88117857 Rev. V. Description of Invention (30) GT (s ^ = Κτ KT (l -f T ^ p · s + Tjp · TDT · s s. T Han •-(24) The formula. Therefore, the synthetic transfer function G (s) is as follows: 邠) = 耷 i ^ r (l + · g + T ^ · TDr · s2) s. Κγ. T * jyy. Tjr (1 + B ^ s +? (Λ) (25) Generally, because s2 is present in the denominator, it should be understood that the system should be in the form of a second form. Second, as long as one considers and considers the incomplete transfer function Gv (S) of the seed crystal rising speed operation amount generating device M10, Differential fractal, then the Gv (S) system can be

DV 1 + '^ DV' to express, GT (s) is PI D, so it becomes as follows 7054-2811-PFl.ptc Page 33 2001.12. 07. 034 / y

^ r (s) = if. a 1— · + — ΤΰΓ · s, V TirS \ + aTTDT.Sj il + Ί = _ (+ ^ (Var Tdt ^ Tdt. r ^) J + 5 · αΓ.-7dt) .. (27) formula. Therefore, the synthetic transfer function G (s) is as follows: G (0 = soil

V Α0 + ～ Κ). {1 + ^ Ά + 7 ^ I ___ i + g2 (Wj ^ ~ 7 ^ f · TDY + TDT) (28) 4 (1 + 印 2 + £ ^ ~ 3) Second, because S2 The system exists in the denominator ', so we can understand that the system should be composed of 0 ^ — · ^ Here, we can understand that the block diagram shown in the same figure (a) can be transformed into the block diagram shown in the same figure (b). The structure of the block shown in the same figure (b) is the same as the structure of the block shown in the figure (a). It is a two-dimensional control system about the control of the crystal growth diameter GD, and it is also about the seed crystal ascent rate. The second form of the control order u: The second solution is because the "minimum product" shown in Figure 4 (a) is the key to achieve the purpose, so it can be a stable control system.

508379 __Case No. 88117857_ Year Cr $ _ 5. Description of the Invention (32) Above, it can be confirmed that the differential element is a complete differential and an incomplete differential, and becomes a two-form control system. Therefore, in the future, when confirming whether it is a two-form control system, we will only examine the incomplete differential which is generally used in the control system. Secondly, consider the case where points are connected in multiple stages. First, considering the case where the PID blocks of the temperature operation amount generating device μ 12 in FIG. 4 are connected in cascade to integrate integral elements, the synthetic transfer function fG (s) that should be constituted also becomes a three-shaped control system, even if ideally heated The device temperature is a function of more than people, and the seed crystal rising speed SL also converges with an unsteady deviation. Therefore, it is effective to constitute the temperature operation amount generating device M12 with two or more integral elements. However, when the field $ of the number of points of the integral element is increased, it is easy to cause a beep. Therefore, when a stable = system is to be constructed ', it is best to make the integral element the minimum number of stages. Fig. 5 is a block diagram showing a modification of the second aspect of the present invention. Same as picture $. The seed crystal rising speed operation amount generating device M10 can be constituted by the sum of the primary, two elements D1, and the secondary differential. In the following, it is checked whether the constitution of β is the same as the control system of two or more forms. Inscription: ρ Ip First, considering the incomplete fractal of the transfer function Gv (s) of the seed crystal rising speed operation amount generating device M10, the Gy (s) can be expressed as follows: ^ DV + 1 + OT1!; · .. 5 " • · · (29)

508379 Amended β 88117 ^ 7 V. Description of invention (33). Because GT (s) is the same as Equation 27

The (s) system becomes the following transfer function G 〇 (s) = £ r (30) == 0 2 ^ 1 ^ 3) ~ Al + ^ + C252) ~~ " Generally because the S2 system exists in the denominator Therefore, the second gate is related to the crystal growth solution diameter = π dagger: the control of rsL two forms = the purpose, so the system is reached with the least integral elements. The timing of the mode that explains the effect of the second form of the present invention is the action of * base ====, which is similar to the _ series, and the temperature operation: production ^ species = :: degree of operation. The effect of the second form. In the following description, based on this FIG. 6, the following explanation will be given: If the crucible 14 is raised, the amount of supplied heat and emitted heat S will increase. As a result, the 'single crystal 10' becomes easy to cure: (Dual = The operating amount generating device M10 is operated at the rising speed of the material crystal, and the weight deviation GWD is given to the two micro-blades to generate a weight deviation corresponding to the weight shown in FIG. The change of GWD 'is the seed crystal ascent speed operation amount SLC. As a result, the crystal growth diameter is exposed. Page 36 2001.12.07.037 508379 _ Case No. 88117857 V. Description of the invention (34) GD starts to converge to the target value. At the same time, the temperature operation amount The temperature operation amount TC is increased. When it is increased, the temperature increase value of the heater 16 is 0. The device M12 is an integral weight deviation GWD. As a result, according to the increase of the temperature operation amount TC, the insufficient heat tends to change before the change.

Ik is close to a predetermined value, and the single crystal 10 is easily cured and returns to its original state, and the increase in weight deviation GWD becomes moderate. As a result, the seed crystal ascent speed operation amount SLC decreases, and the crystal growth diameter (^ becomes 0 when it converges to the target value. That is, the crystal growth diameter 0 and the seed crystal ascent speed 讥 converge to the target value. This state continues continuously, then The weight deviation GWD stabilizes at a fixed value and becomes the output of the horizontal part of the same figure (a). Therefore, once the crucible 14 rises again, the insufficient heat becomes large, and the effect of the above is repeated, so that the crystal growth diameter GD and The SL on the seed crystal converges to the target value. Τ | & A timing diagram based on the same behavior pattern obtained by repeating the above action will be described. First, the weight deviation GWD is based on the company ’s long diameter GD. This action will increase the stability and stability repeatedly, and become a stepped output that y Nisei (a) does. On the one hand, the seed crystal ascent rate · SLC increases the gradient of the weight deviation GWD, which is the direction of the GWD repeatedly. It stabilizes in the direction and converges to 0, and becomes an output like SLC. On the other hand, the temperature operation amount TC is increased according to the slope of the difference = GWD, and the output is as shown in Figure (b). Type. In other words, the temperature pattern is a pattern that is output as the temperature integral operation value of the weight deviation GWD, and becomes the absorption structure.

508379 88Π7857

V. Description of the invention (35) Ideal type of environmental change Also, the timing diagram shown in the same figure shows the simplified model of actual growth. The actual action is more complicated than that shown in the same figure. According to the second form of the present invention described above, the seed crystal rising speed operation amount 3! ^ Is generated because of the variation of the amount deviation GWD ′, and the temperature operation amount TC itself forms an ideal type of the heater temperature. Therefore, ρ can be expected to converge with the crystal growth diameter GD by composing the fluctuation of the seed crystal rising speed SL with the minimum pressure. As a result, a suitable two-value numerical control can be achieved. As a supplementary explanation, the unfavorable effect of the proportional element of the seed crystal rising speed SL will be described again. There is a certain weight deviation value, and when the son-in-law is holding (a certain value), the operating amount of temperature is settled with a certain gradient. Here, the proportional element that makes the weight deviation converge to 0 is an increase in a certain gradient of the operation amount at which the printing is stopped and the temperature is reduced, so that its slope is reduced. Therefore, the speed control that takes into account and contains the proportional element is in the direction of falling temperature when the temperature must rise, and the temperature is four degrees. Therefore, the control system is unstable and causes the phenomenon of humming. Today (Third Form)

The third aspect of the present invention exemplifies the applicable possibility to an optical pull-up device. U I is a block diagram showing the configuration of the numerical control device of the second type of the third aspect of the present invention. Therefore, based on the same figure, the structure of the present invention will be described. There is also 'about the structure based on the aforementioned first type:', the same symbol is given and the description is omitted. In the following description, mainly

7054-281l-PFl.ptc Page 38 2001.12. 07.039 508379 Fix

MM 88117RB7 V. Description of Invention (36) Explains the part that is different from the first type. The diameter control parameter detection device M14 detects the crystal growth diameter gd and the diameter control parameter CP, and generates the detection device M16 of the ... And ® in the deviation signal deviation signal generating device M16 generates a difference between the diameter of the crystal growth diameter 知 and the crystal growth diameter 所 detected by the diameter control parameter detection (hereinafter, referred to as " diameter deviation GDD "), and Generated: = The difference GDD is output to the seed crystal rising speed operation mass production operation amount generation device Ml 2. / Phoenix degree The seed crystal ascending speed operation amount generating device M10 is expressed by including the proportional term ^ ί ΐ Ϊ, and the signal according to the diameter deviation GDD is output as the seed crystal dream tn operation amount. The reason why the seed crystal ascent speed operation is mass-produced 2 The reason that the dagger is composed of proportional elements is that the diameter deviation ⑽ becomes 0 when the diameter deviation ⑽ becomes 0, which becomes the target value. Control + ^ This item ‘I ^ To pay attention to the control object of seed crystal ascending speed SL == numerical control, then the ascending speed SL of the diameter deviation GDD needs to be returned to the target value immediately. As before, as long as the time before returning to this value, the quality of the single crystal 10 will be affected. Yu Ren, it is unsatisfactory that the seed crystal raising speed operation amount generating device M10 contains the element of the change history of response = i D. Because it should be, the prime system is used to make the seed crystals rise in speed and diverge. In the optical formula, the sum, = the integral element that calculates the value of the diameter deviation GDD by integrating the element.

508379

-___ sickle 88117857 V. Description of the invention (37) The temperature operation amount generating device M 1 2 is expressed by a transfer function including an integral term, and a signal corresponding to the history of the diameter deviation GDD is used as the temperature surface amount TC. Output. The reason why the temperature operation amount generating device M12 includes an integral element is as explained in the aforementioned invention procedure. In this regard, the degree-of-operation-quantity generating device M1 2 is a differential element and a proportional element so as not to be a disadvantage ', as shown in the figure, and can be used as PI D. ^, Ruler Check whether the composition of the third plastic sadness constitutes more than two forms of control. First, the transfer function Gv (s) of the opening speed operation amount generating device M10 on the seed crystal is given by the following formula. Formula. Therefore, the combined (31) S) system becomes the following [1 +-¥ ατ · ¥ TDT Ί. (32) + s2 (W Shen + formation transfer function G (S) system can be expressed as the following formula 0γ, because S2 '· (33) The system exists in the denominator, so we can understand that the constituent system is

Page 40 2001.12. 07. 041 508379 _ Case No. 88117S57 month g__ V. Description of the invention (38) Two forms. Furthermore, it is understood that it is a two-form control system related to the control of the crystal growth diameter GD, and is also a two-form control system related to the control of the seed crystal rising speed SL. Furthermore, I learned that each component should achieve a stable control system because it achieves its goal with the fewest points. In the case where the PID element of the temperature operation amount generating device M12 is connected in cascade with three or more stages, the integral element is the same as the second type described above, because it has a two-shape, so even the ideal heater temperature type As a function of one-person or more, the seed crystal rising speed SL also converges to two t 疋 with an unsteady deviation. When the number of integral elements increases, it is easy to cause buzzing, so you need to pay attention. FIG. 8 is a block diagram showing a modification of the third aspect of the present invention. As shown in the figure, the seed crystal ascending speed operation amount generating device M10 can be constructed by combining the ratio of “t” and t. The following shows whether the structure shown in the figure constitutes a control system with more than two shapes. F First, the transfer function of the seed crystal rising speed operation amount generating device M10 is set as Gv (s), which can be expressed by the following formula GA) = 1 + —. S — ... (34)

So the synthetic transfer function G = (Tpy + aY · ^ Σ > γ) + l) 1 + (χγ · Tj- ^ γ * 5 is expressed. Because GT (s) is the same as Equation 32

View 379 King No. 88117857 V. The description of the invention (39) (s) can be as follows: G (s) = σ7 is positive rr (l + S, + C / 2 + D /) ~? (L + 5 / + C 〆) ~ '• * (35) J' Because the S2 system exists in the denominator ', you can understand the two. Moreover, it is understood that the system has a relationship with the crystal growth diameter 讣: it is the second control 糸, and it is about the seed crystal rise speed 上升Work-a form. Furthermore, I learned that because each component should be the most important; the second: m as the purpose, so it becomes a stable control system. Figure 9 shows the function of the third form of the present invention. The same figure u) shows the behavior of the diameter deviation GDD, and Tongbei does not explain the third type based on the operation amount SLC and the temperature operation amount Tc of the diameter deviation GDD. In the role of the state ... the following, Gu ^ disintegrate one hundred S feet: Shi Shang ★ 'is a balanced society that supplies heat and releases heat. As a result, the single crystal 10 becomes easy to solidify. As shown in ⑷, the diameter deviation ^ = long straight 增加 —increases, and the proportional elements of the operation amount generating device M10 at the speed of the furnace 1 丄 2 丄 will be straight, resulting in Corresponds to the straight ST mark II as shown in Figure (C) 7054-281l-PFl.ptc Page 42 2001.12. 07. 043 508379 Amendment No. 88117857 V. Description of the invention (40) Simultaneous' temperature operation amount generated The device M12 is an integral diameter deviation GDD, and a change history of the crystal growth diameter GD is generated as an integral calculation value. Therefore, the integrated operation value is integrated to increase the temperature operation amount. The junction I 'increases according to the temperature operation, and the temperature of the heater 16 rises, and the insufficient heat tends to the value before the change. When the insufficient heat approaches the predetermined value, the easy-to-solidify system of the single crystal 10 will return to its original state, and the increase in the positional deviation GDD will become moderate. As a result, the seed crystal ascent rate decreases by 1 SLC, and the crystal growth diameter GD becomes 0 when it converges to the target value. That is, the crystal growth rate 働 and the seed crystal rise rate 讥 converge to the target i. This state continues until the diameter deviation GDD stabilizes at 0 'and becomes the output of the horizontal part of the same figure (a). Therefore, once the crucible 14 rises again, and the insufficient heat becomes large, the effect as described above is covered, so that the crystal growth diameter GD and the species SL converge to the target value. < & In order to show the repetitive behavior of # according to the above-mentioned action in the mi sequence: to explain, first of all, the 'diameter deviation_ is the behavior of upright GD according to crystal growth, it will increase and stabilize iteratively, and The output is the same as that shown in Figure (a). Therefore, the seed crystal upper-level manipulated variable SLC in response to the diameter deviation GD]) is output as shown in (c) iSLc. On the one hand, the integral value of the diameter deviation GDD means that the diameter deviation changes each time: u: calculation, and it becomes a phase-like loss as shown in Figure 以; phase temperature is the integral of the diameter deviation GDD. The value is increased according to the slope shown in the figure (b), and the temperature pattern of K as shown in figure (c) is output. In other words, the temperature pattern is used as the gate 2);

508379 V. Description of the invention (41) The ideal form of the change of %% which is called ^ 成. In addition, on the date shown in the same figure, it is easier for the facilitator to f, and the action of f is more complicated than that of the same figure. According to the above description of the present invention, the seed crystal with a deviation of GDD from the size of "a" to "2" 6 is generated according to the diameter tc and integrated heating is performed; the amount of SLC: because of the temperature operation of the crystal ascending speed SL changes; 7 :; make the ideal type 'so it will be planted :; supplementing the fruit, you can achieve the appropriate two

The field with integral elements "is derived from the point that the seed crystal's ascending speed SL is not beneficial. Straight ;; the product of the ascending speed SL used to have a diameter bias of 居 居 居 居 'deviation. Therefore, considering the addition of ^ and t, the integral element holds the operation amount. The stable state of the value .: The past method :: Get the integral value that converges to the target. If the positive direction of the diameter deviation is controllable by two numerical values = pin ##, then it can be considered as: this: the minimum-order function to increase it, so you can test even; The third technology described in the above is the ideal pattern of each batch of warrior S ..., the temperature of the device, but because the ideal pattern is different from the negative direction, the positive direction integral is considered and implemented. [Implementation For example, the values are consistent, but it is difficult to do offsetting.

508379

The weight deviation GWD is input in parallel to the d-type speed operational amplifier 72 and the HD-type temperature operational amplifier 74, and the seed crystal rising speed operation amount SLC and temperature operation amount TC are independently generated. The seed crystal raising speed operation amount 讥 ^ changes the seed crystal raising speed SL to converge the crystal growth diameter ，, and the temperature operation amount TC changes the heater temperature so that the insufficient heat converges to a predetermined value (refer to FIG. 13). (Best Embodiment) Fig. 10 shows a configuration of a numerical control device for a single crystal according to a preferred embodiment of the present invention. Therefore, the structure of the binary control device will be described based on the same figure. In this embodiment, "the weight type and the optical type are described simultaneously", and it is clearly understood that the present invention can be implemented in any one of the following aspects: 丄 Furthermore, regarding the constituent elements described in the aforementioned implementation mode of the invention, The same symbols are assigned and detailed descriptions are omitted. In addition, in the following descriptions, <&gt; appended to the signal name indicates a unit. The main control section 30 drives the seed crystal control section 32, the Lai control section 48, and the heater heater and the manufacturing section 34, and performs numerical control of the crystal growth diameter ⑼ and the seed crystal rising speed. Because the main control unit 30 achieves the two-value control Π 2 to determine the seed crystal ascent speed SL, the crucible ascent speed, and the plus, the, and the benefit angle, and output the determined values to the seed crystal control, respectively.部 32 、 器 控制 部 34。 32, device control section 34. Furthermore, because the main control = 7 is constant, as the single crystal &quot; grows in size, the order is made so that the liquid level at which the accident 14 rises at a predetermined ratio is constant. Also, because the level-definite control system is a well-known technology, so

2001.12. 07. 046 7054-2811-PFl.ptc Page 45 amended t number 88117857 V. Description of the invention (43), detailed description 'and the following description is that the rising height of the seed 18 is the sum of the f growth length GL is equivalent. The seed crystal control unit 3 2 is a weight sensor 2 6 (see figure 丨 丨) having a control mechanism for measuring the lifting and rotation of the seed crystal 18 and the crystal growth weight Gw (see figure 丨 丨), and the seed determined by the main control unit 30 The crystal rising speed SL is used to make the seed crystal 8 rise. # Nail1 control unit 48 is provided with a control mechanism (refer to FIG. 11) for raising and lowering the crucible 14 and the crucible i 4 is raised at a speed determined by the main control unit 30. &gt; The heater control unit 34 generates an HCNT &lt; W / h &gt; signal based on the output HPWR &lt; volt &gt; of the main control unit 30, and outputs the generated signal to the heater 16. As a result, the heater 16 generates heat in accordance with HCNT &lt; w / h &gt;, and supplies heat to the crucible 14. The diameter sensor 28 is arranged above the solution 12 and optically detects the crystal growth diameter GD. Therefore, the detected value is output to the main control unit 30 as GD &lt; v 〇 11 &gt; 4. The diameter sensor 28 is used in an optical type. The heat preservation tube 40 is arranged on the periphery of the heater 丨 6, and keeps the heat released from the heater j 6 on the inside, so that the heating efficiency of the crucible 丨 4 is improved. 々The temperature sensor 4 2 is arranged inside the thermal insulation tube 40 and detects the temperature around the thermal insulation ^ 40. Therefore, the detected temperature is output to the main control unit 30 as a & TMp &lt; v〇LT &gt; signal. In addition, instead of the temperature sensor 42, a radiation thermometer is arranged around the heat-retaining tube 40, and the temperature of the covering material constituting the inside of the heat-receiving tube 40 can also be measured. ,

7054-2811-PFl.ptc Page 46 2001.12. 07. 047

Yufa? It is used to contain crucibles 14 and heaters 16 in the air. An argon system is supplied in the chamber 38. Cauldron protection: The f-axis 46 is fixed below the crucible support table 44, and the crucible will be: disaster = force and: drop and rotate, the support table 44 is also placed to track the crucible shaft 46 up and down and rotate Xi. As a result, the hanging system 1 and 4 can be lifted and rotated. FIG. 11 is a block diagram showing the configuration of the seed crystal control section 32 and the crucible control section 48 shown in FIG. 10. Hereinafter, the configurations of the seed crystal control unit 32 and the pot control unit 48 will be described based on the same figure.

▲ The first motor amplifier 54-1 receives the output SL &lt; v〇it &gt; signal of the main control unit 30 as a setting signal, and generates SCNT &lt; volt & gt while referring to the rotation speed of the first gear M- 丨. ;signal. Therefore, the generated signal is output to the first motor 50-1. —The first motor 50-1 rotates the first gear 5 2-1 according to the output SCNT of the first motor amplifier 54 —. As a result, the cable tube 24 is rotated, the cable 2 2 is wound, and the seed crystal 18 is raised. When the seed crystal 8 is lowered, the first motor 50-1 is rotated in the reverse direction.

The first square-turn encoder 5 6 — 1 converts the rotation speed of the first gear 5 2-1 into a pulse wave signal and outputs it to the first pulse wave counter 5 8 — 丨. The first pulse wave counter 58-1 counts the pulse wave signals received from the first rotary decoder π — 丨, and outputs the counted result as a SLH signal (seed rising height) to the main control unit 30 . When the seed crystal 18 is lowered, the count value of the first pulse wave counter 5 8 -1 is decreased. In addition to the structure shown in the figure, the seed crystal control unit 32 is provided with

Page 47 2001.12.07.048 508379

The seed crystal 18 can be rotated. This structure is for a structure that raises the seed crystal 8 described above, and the description is omitted here. The second motor amplifier 54-2 receives the output CL &lt; v〇1t &gt; signal of the main control unit 30 as a setting signal, and generates motor driving power CCNT &lt; v〇u> while referring to the rotation speed of the second gear 52_2. . Therefore, the generated signal is output to the second motor-2. The second motor 50-2 rotates the second gear 52-2 based on the output of the second motor amplifier 54-2. When the crucible 14 is lowered, the first motor 50_2 is rotated in the reverse direction. A crucible control unit 48 is provided with a structure capable of rotating two crucibles 14 in addition to the structure shown in the figure. This structure is for a structure which raises the crucible 14 mentioned above, and description is omitted here. FIG. 12 shows the structure of the heater control section 34 shown in FIG. 10. As shown in the figure, the heater control unit 34 is constituted by a feedback control system using a sensor. Because of A and power, detailed explanation is omitted. FIG. 13 is a block diagram showing the structure of the weight block of the main control unit 30 shown in FIG. The following is the constitution of the first-square of the quantitative formula. In addition, the parameters that are included in the transfer function are unified as follows-"㈣" is a combination of the velocity conversion constant V, τ = temperature conversion constant-speed control system differential system differential time, TDT = temperature control system Differential time ^ Several degrees of control time, Tit = temperature control time integration time Zimen Ti factory speed control system integration number and degree control system differential coefficient, pv = speed control system proportional increase

7054-281l-PFl.ptc Page 48 2001.12. 07. 049 508379 Case No. 88117857 V. Description of the invention (46) Benefit, Pτ = proportional gain of temperature control system. The first amplifier 6 6-1 converts the digital input to g [η Han replaced with SLH &lt; mm &gt;, and the SLH &lt; _ &gt; is crystallized; the degree is <as>, and the resulting value is output in The first calculation execution unit 68-1, the target diameter determination unit 78, and the target speed determination unit 80 shown in FIG. The rear section of the first amplifier 66-1 and the second amplifier 66-3 is constructed by software. A target diameter determination unit 78 memorizes the target diameter corresponding to the crystal growth length GL as a pattern in advance, and puts GL &lt; mm &gt; into the pattern to determine the appropriate target diameter. Therefore, the determined value is output as GD (GL) &lt; nun &gt; to the first operation execution unit 68- 丨 and the second operation execution unit 68-2 shown in Fig. 14. Section ^^ Nose Execution Department 6 8-1 Series GPW =

Dcrystal 4 ~ \ ^ {GD (GL)} 2d

L is here: the specific gravity of Dcrystal single crystal 10; ^ Pi; GL = crystal growth length; GD (GL) = target diameter;, the above calculation can be performed, and the target weight corresponding to the aforementioned target diameter can be predicted. Therefore, the predicted weight GPW &lt; g &gt; is converted from the analog input signal GW &lt; g &gt; to the GW &lt; g &gt; by the second subtractor third amplifier 66-3 series, and outputs the Gw &lt; g &gt; In the second subtractor 70-2 and the crucible diameter determining unit 82. The rear stage of the third amplifier 66-3 is configured by software. The second subtracter 70-2 takes the difference between GPW &lt; g &gt; and (^ &lt; 2 &gt;), and produces

2001.12. 07. 050 508379

GWD &lt; g &gt; 'and outputs the resulting values to the ^ -type speed operational amplifier 72 and the PI D-type temperature operational amplifier 74. D-type speed operation amplifier 7 2 series 100 • (37) GWD &lt; g &gt; is processed by the above transfer function to generate seed crystal raising speed operation amount SLC &lt; mm / min &gt;. Therefore, the resulting value is output to the fifth subtractor 70-5 shown in Fig. 14. 4, PI D type temperature operation amplifier 7 4 series .- (38) (1 + ι + Γχ · ^ + ώ) '? The GWD &lt; g &gt; is processed by the above transfer function, and a temperature operation amount TC &lt; is generated. C &gt;. Therefore, the generated value is output to the third subtractor 7 0-3 〇 shown in FIG. 5, and FIG. 14 is the second block showing the weight formula of the main control section 3 〇 shown in FIG. 10. Block diagram of the composition. In the following, the structure of the second block of the weight formula will be described using the same figure. The target speed determination unit 80 memorizes the target speed corresponding to the crystal growth length GL as a program type in advance, and puts "" ^ into the program type to determine the appropriate target speed. Therefore, the determined value is output as SL (GL) &lt; mm &gt; to the fifth subtractor 70-15. The fifth subtractor 70-5 takes 81 (〇1〇 &lt; _ / 11 ^ 11 &gt; and 31 ^ &lt; 111111/11 ^ 11 &gt;

Case No. 508379 88117857 said that the difference between the first and fifth invention description (48) resulted in the seed crystal rising speed SL &lt; mm / min &gt;. Therefore, the generated value is output to the fourth amplifier 66-4 and the second operation execution unit 68-2. The fourth amplifier 6 6-4 converts the output of the fifth subtractor 7 0-5 into an analog signal SL &lt; volt &gt; and outputs it to the first motor amplifier 5 4-1 shown in FIG. The rear stage of the fourth amplifier 6 6-4 is configured by hardware. The crucible diameter determining portion 8 2 is a crucible in which the depth of the crucible 14 is associated with the diameter of the accident 14 in the depth, and is determined in advance based on the memory content. diameter. Specifically, the output GW &lt; g &gt; of the third amplifier 66-3 is made to correspond to the depth of the crucible depth 14 memorized above, and the diameter of the crucible 14 corresponding thereto is divided. Therefore, the determined diameter CI (GL) &lt; mm &gt; is output to the second operation execution unit 68-2. Second operation execution unit 68-2

Dcrystal · (gD (GL) Y GL · '.. (39)

SL

Dmelt- {GI (GL) y Here: Dcrystal = specific gravity of single crystal 10; GD (GL) = target diameter; Dmel t two melts 12 specific gravity; CI (GL) = melt 12 contacting the liquid surface The diameter of the crucible part 14 is SL; SL = seed crystal ascending speed; The above ratio calculation is performed, and the necessary crucible ascending speed CL &lt; mm / min &gt; can be calculated because the liquid level is fixed. Therefore, the calculated value is output to the fifth amplifier 66-5. The fifth amplifier 66-5 converts CL &lt; mm / min &gt; into an analog signal CL &lt; volt &gt; and outputs it to the second motor amplifier 54-1 shown in FIG. The

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Page 51 2001.12. 07. 052 508379 --MM 88117857 __ year month day correction __ V. Description of the invention (49) The section after the fifth amplifier 66-5 is made of hardware. FIG. 15 is a block diagram showing the configuration of a third-party block of the main control section 30 shown in FIG. 10. Hereinafter, the structure of the third-party block will be described using the same figure. This block is common to both the weight type and the optical type. The third subtractor 70-3 takes the difference between the set temperature T set &lt; ° C &gt; and tc &lt; ° c &gt; of the heater 16 to generate the heater temperature HT &lt;. 〇. Therefore, the resulting value is output to the sixth amplifier 66-6. The sixth amplifier 66-6 converts HT &lt; ° C &gt; to HT &lt; volt &gt;, and is output in the fourth subtractors 70-4. The sixth and subsequent amplifiers 6 6-6 are constructed by hardware. The fourth subtractor 70-4 takes the difference between the HT &lt; volt> signal and the output TMP &lt; volt &gt; of the temperature sensor 42 to generate a temperature deviation HTD &lt; v〇lt &gt;. Therefore, the generated signal is output to the PID temperature control amplifier 84. PID type temperature control amplifier 8 4 series 1 + Ding · s + 1 100 1 + € ίτ · Ύητ · s Tjp sj (40) Process HTD &lt; volt &gt; with the above transfer function and generate electric power as HPWR &lt; V〇lt &gt;. Therefore, the generated value is output to the adder control section 34 shown in Fig. 10 &amp; FIG. 16 is a block diagram showing the configuration of the first block of the optical type of the main control section 30 shown in FIG. 10. In the case where the numerical control device according to the second part of the present invention is configured optically, the block shown in the figure is used instead of the first block of the weight type shown in FIG. 13. ": Use this figure 16

7054-281l-PFl.ptc Page 52 2001.12. 07. 053 508379 __case No. 88117857_ year month day_ amendment ___ 5. Description of the invention (50) to explain the structure of the first block of the optical type. It should be noted that the same components as the first block of the weight formula are given the same reference numerals and descriptions are omitted. In the following description, the description will be mainly given of the parts different from the first block of the weight formula. The seventh amplifier 66-7 converts the analog output GD &lt; volt &gt; of the diameter sensor 28 shown in Fig. 10 to GD &lt; mm &gt; and outputs the GD &lt; mm &gt; to the second subtractor 70- 2. And the third operation execution unit 68-3 shown in FIG. The rear section of the seventh amplifier 66-7 is composed of hardware. The second subtracter 70-2 takes the difference between GD (GL) &lt; mm &gt; and GD &lt; mm &gt; generated by the target diameter determining section 78, and generates a diameter deviation GDD &lt; mm &gt;. Therefore, the resulting value is output to a PD-type speed operational amplifier 86 and an I-type temperature operational amplifier 88. PD Type Speed Operational Amplifier 86 Series = TDV.s) 100 ^ 1 + € ίγ Τΰγ S J Ργ

Ky also processes GDD <bandit> with the transfer function described above, and generates the seed crystal rising speed operation amount SLC &lt; mm / min &gt;. Therefore, the resulting value is output to the fifth subtractor 70-5 shown in FIG. Type 1 temperature operation amplifier 8 8 series 〇η (β) = 1 100 d • .. (42), and output the result to PI D type and process GDD &lt; mm &gt; with the above transfer function

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Page 53 2001.12. 07. 054 508379

Stuffedness 刼 work amplifier 74. The p i 0 type temperature operation amplifier 74 uses the same type as the aforementioned weight formula, and each constant is adjusted by another method. In addition, the connection order of the I-type temperature operation amplifier 88 and the P D-type temperature operation amplifier 74 can be reversed from that shown in the figure. FIG. 17 is a block diagram showing the configuration of the second block of the optical type of the main control section 30 shown in FIG. 10. When the numerical control device related to the second aspect of the present invention is configured optically, the second block related to the weight type shown in Figure 4 is used instead of the second block shown in the figure. Hereinafter, the configuration of the second block of the optical type will be described using FIG. I 7. In addition, regarding the same constituent elements as the second block of the weight formula, the same symbol ^ is given, and the description is omitted. In the following description, the main description is related to the weight formula: The second block is a different part. The hanging diameter determination unit 82 is to make the depth of the crucible 14 correspond to the diameter of the accident 14 in the depth, and to memorize it in advance, and based on the content of the memorandum, determine the part to be connected to the melt 12 Crucible diameter. Specifically, the crystal growth weight gw was calculated using GL &lt; mm &gt; and GD &lt; mm &gt;, and the calculated value corresponded to the straight length of the crucible 14 memorized previously, and the proper diameter was divided. μ 田 Third operation execution unit 6 8-3 series GL =

Dcrystal · GD2 ~ Dmelt {CI (GL) Y • · · (43) Here: Dcrys ta 1 = specific gravity of single crystal 1 0; GD = detection diameter; Dme 丄 t melt 12 specific gravity; ci (GL) = Hanging of the part contacted by the liquid surface of the melt 12

View 379

The diameter of the exhaust 14; SL = seed crystal rising speed; if it is constant, it must be calculated. The calculated value is output to perform the above-mentioned ratio calculation because the liquid level is required as the exhaust rising rising speed CL &lt; mm / min &gt;. Therefore, the fifth amplifier 66-5. [Effects of the invention] As explained above, according to the present invention, it is possible to provide two values of effective single crystals in achieving control. Also, according to the first form of the present invention, because the seed crystal is on degree # The amount of operation SLC and temperature operation Tc are generated based on the deviation signal _. Therefore, the seed crystal rising speed SL can be independently used as a convergence device for crystallization + diameter GD, and the temperature of the heater can be regarded as The seed crystal ^ raising speed SL convergence device is used. As a result, the numerical control of the crystal growth diameter GD and the seed crystal ascent rate can be achieved in an integrated manner. Furthermore, if the deviation signal DEV is input to the speed control system and the temperature control system in parallel, the transfer function suitable for individual control can be used independently, so the stable two-value control becomes variable. As possible. Moreover, according to the second form of the present invention, the seed crystal rising speed operation amount slc is generated according to the variation of the weight deviation f GWD, and the temperature operation amount TC forms an ideal form of the heater temperature in an integrated manner, so The structure in which the fluctuation of the seed crystal rising speed SL is minimized, and the crystal growth can be expected to converge only by GD. As a result, it is possible to achieve appropriate two-value control. Furthermore, according to the third aspect of the present invention, since the seed crystal rising speed operation amount is generated according to the diameter deviation = GDD, and the temperature operation 畺 TC forms the ideal type of the heater temperature by itself, so To

508379 Case number 88117857 V. Description of the invention (53) The variation of the seed crystal ascending speed SL is kept to a minimum, and the convergence of the growth diameter GD can be expected. As a result, an appropriate second value can be achieved. [Simplified description of the figure] '^ Figure 1 is a cross-sectional view showing the relationship between the heater and the crucible in a general pull-up device. Fig. 2 is a diagram showing an ideal form of the heater temperature expressed by Equation 17 and Fig. 3 is a diagram showing the completion of the numerical control of the first form of the present invention. Structure of the Second State Numerical Control FIG. 4 is a block diagram showing the implementation of the present invention. Fig. 5 is a block diagram showing a modification of the second aspect of the present invention. Fig. 6 is a timing chart illustrating the mode of action of the second form of the present invention. Fig. 7 is a block diagram showing the configuration of the second numerical control of the third form of the present invention. FIG. 8 is a block diagram showing a modification of the third aspect of the present invention. Fig. 9 is a timing chart illustrating a mode of operation of the third type of the present invention. Fig. 10 is a partial cross-sectional view showing the configuration of a single crystal two numerical control device according to a preferred embodiment of the present invention. FIG. 11 is a block diagram showing the structures of the seed crystal control section 32 and the crucible control section 48 shown in FIG. FIG. 12 is a block diagram showing the configuration of the heater control section 34 shown in FIG.

7054-281l-PFl.ptc 2001.12.07.057 Page 56 508379 _Case No. 88117857_ Year Month Day_ί ± ^ _ 5. Description of the invention (54) Figure. FIG. 13 is a block diagram showing the structure of the first block of the weight formula of the main control section 30 shown in FIG. 10. FIG. 14 is a block diagram showing the structure of the second block of the weight formula of the main control section 30 shown in FIG. 10. FIG. 15 is a block diagram showing the structure of the third block of the weight formula of the main control section 30 shown in FIG. 10. FIG. 16 is a block diagram showing the configuration of the first block of the optical type of the main control section 30 shown in FIG. 10. Fig. 17 is a block diagram showing the configuration of the second optical block of the main control section 30 shown in Fig. 10. Explanation of symbols] 10 single crystal 12 solution 14 crucible 16 heater 18 seed crystal 20 chuck 22 wire winding 24 wire barrel 26 weight sensor 28 diameter sensor 30 main control unit 32 seed crystal control unit

7054-2811-PFl.ptc Page 57 2001.12.07.058 508379 Case No. 88117857_Year_Month_Revision V. Description of the invention (55) 34 heater control unit 38 room 40 insulation tube 42 temperature sensor 44 crucible support table 46 Crucible shaft 48 Crucible control unit 50- 1 First motor 50- 2 Second motor 52- 1 First _ 1 * Gear 52- 2 Second gear 54- 1 First—— Motor amplifier 54-2 Second motor amplifier 56-1 The first rotary decoder 58-1 The first pulse wave counter 60 The sluice fluid controller 62 The AC-DC converter 64 The power sensor 66-1 The first _ _ first amplifier 66-3 The second amplifier 66- 4 The fourth amplifier 6 6 -5 Fifth amplifier 66- 6 Sixth amplifier 66- 7 Seventh amplifier

7054-2811-PFl.ptc Page 58 2001.12. 07.059 508379 _Case No. 88117857_ Year Month and Day_ V. Description of the invention (56) 68-1 First operation execution unit 68-2 Second operation execution unit 68-3 No. Three operation execution unit 7 0-2 Second subtractor 7 0-3 Third subtractor 70-4 Fourth subtractor 7 0-5 Fifth subtractor 72 D-type speed operation amplifier 7 4 PID temperature operation amplifier 78 Target Diameter determination section 78 80 Target speed determination section 82 Crucible diameter determination section 84 PID temperature control amplifier 86 PID speed operation amplifier 88 I temperature operation amplifier

Ml 0 seed crystal rising speed operation amount generating device

Ml 2 temperature operation quantity generating device

Ml 4 Diameter control parameter parameter detection device

Ml 6 Deviation signal generator CP Diameter control parameter DEV Deviation signal GD Crystal growth diameter GDD Diameter deviation GL Crystal growth length

7054-2811-PFl.ptc Page 59 2001.12. 07.060 508379 Case No. 88117857 A_ Revision V. Description of the Invention (57) GW Crystal Growth Weight GWD Weight Deviation SL Seed Rise Speed SLC Seed Rise Speed Operation Amount TC Temperature Operation Amount

7054-281l-PFl.ptc p.60 200112.07.061

Claims (1)

508379 I I 88117857 repair ’ 1 · A single crystal two numerical control device, including: · seed crystal rising speed operation amount generating device (M10), (10) pull-up speed, that is, the operation of seed crystal rising speed (SL). The quantity generating device (M12) generates a quantity for operating the temperature around the single μ crystal, that is, the temperature operation quantity (TC), 〇), and the growth diameter of the single crystal (10), that is, the growth rate of the seed crystal and the seed crystal. (SL) Converges to their respective goals ^ ^, diameter (GD) It is characterized by: &gt; Diameter control parameter detection device (M14), which detects parameters that contribute to the control of the GD, namely the diameter control parameter (cp ) · Invasion deviation signal generating device (M16), taking out the difference between the private value of the aforementioned diameter control number CCP) to generate a deviation signal (DEV);-^ The aforementioned seed crystal ascending speed operation amount generating device (M10) is beautifully low The deviation signal generated by the signal generating device (Ml 6) (DE and &quot;, i), the speed (SL) operating amount, that is, the seed crystal rising speed operation = the aforementioned temperature operating amount generating device (M12) It is based on the deviation signal (DEV) generated by = 6). The aforementioned ^^ 2 2 As the scope of patent application! Device, where response = ::: r;: :) :: two contains two / y Amend the case number 881178R7 6. Application for patent scope 1-performance, and output according to the above-mentioned deviation signal (dev) change signal as the seed crystal rising speed operation amount (slc) and output; two temperature operation The quantity generating device (g 1 2) is expressed by a 2-shift function containing integral elements, and outputs a signal based on the history of the aforementioned deviation (J) £ (γ) as a temperature operation quantity (TC). ^ 3. The numerical control device for a single crystal as described in item 2 of the scope of the patent application, wherein the diameter control parameter (CP) of the denier is formed by the single crystal (10), that is, the seed crystal growth weight (G w) ;, F The rising speed operation amount generating device (M10) is expressed by a transfer function containing a micro-knife element; 3 There is an installation from the monthly temperature surface amount (M! Of the transfer function!) To express the device ( Μ12) It is based on the 4th device including the integral element, such as the second item in the scope of patent application, in which the value of the early date of the hemisphere controls the aforementioned diameter control parameter (Cp), and +, # 日 ^ are the crystal growth Diameter (GD) · The seed crystal ascending speed operation amount = Straight D), as an example of the transfer function of the elements; the production device (M10) is based on the 2nd stage of the installation transfer function with the temperature operation amount of 1J. To perform. 2) The device including the integral element of the 5th, such as the first item of the scope of the patent application, in which the above mentioned early value of the body is used to numerically control the aforementioned seed crystal raising speed operation amount and the aforementioned temperature operation amount generating device (production device jM10) 's transfer function 1 2) The ratio of the transfer function constitutes 7054-2811-PFl.ptc Page 62 2001.12. 07.062 508379 Amendment No. 88I〗 78PΓ7 6. The control system with a patent scope of more than two forms 6 The fifth device of the scope of the patent application, wherein, the two crystals mentioned above control the seed crystal ascent speed operation parameter diameter control parameter (CP), and the straight eighth device (Mi〇) is a combination of the former Let's choose the composition, and divide the proportional element, the differential element, and the cross-section of the single crystal (10), and the two components for the curing weight that is less than heat. Compensate for the pull-up length of the single crystal (10) 7. As the mouth device of item 5 in the scope of the patent application, wherein the numerical control of the aforementioned early crystal two controls the diameter control parameter (CP) as the seed crystal growth weight ( GW), the weight that the body (10) grows, and the seed crystal ascending speed operation amount generating device (M10) is expressed by using the transfer function containing the material as the element; each has a slight Han shift, ΐtemperature, degree The operation amount generated vibration set (M12) is expressed by one stage of the transfer function containing integral elements. 8. The single crystal two numerical control device according to item 5 of the scope of the patent application, wherein the diameter control parameter (CP) is the aforementioned crystal growth diameter (GD); the seed crystal ascending speed operation amount generating device (μ 10) is expressed by a transfer function containing a proportional element; the temperature operation amount generating device (M 1 2) just described is expressed by two stages of a transfer function containing an integral element. "" The 63rd tribute 2001.12. 07.064