TW497209B - Method for and structure of alkali earth metal oxide on gate insulators - Google Patents

Abstract

High quality epitaxial layers of stable oxides can be grown overlying compound semiconductor material substrates. The compound semiconductor substrate may be terminated with an atomic layer of gallium, for example (for a gallium arsenide substrate), forming a terminating layer. The oxide layer is a layer of monocrystalline oxide spaced apart from the compound semiconductor wafer by an oxide template layer overlying the compound semiconductor substrate via the terminating layer. The oxide template layer dissipates strain and permits the growth of a high quality monocrystalline oxide layer. Any lattice mismatch between the monocrystalline oxide layer and the underlying compound semiconductor substrate is decreased by the oxide template layer.

Description

497209 A7 B7 V. Description of the invention (1) This application was filed in the United States as a patent No. 09/621/77 1 on July 21, 2000. Scope of the invention The present invention generally relates to the manufacture and use of semiconductor structures, devices and their manufacture, especially compound semiconductor structures and devices, and semiconductor structures, devices and integrated circuits containing single crystal compound semiconductor materials. BACKGROUND OF THE INVENTION Most semiconductor discrete devices and integrated circuits are manufactured using silicon, at least in part because of the availability of inexpensive, high-quality single crystal silicon substrates. Other semiconductor materials, such as so-called compound semiconductor materials, have physical properties including wider energy gaps and / or higher mobility than silicon crystals, or direct energy gaps that make these materials advantageous for certain types of semiconductor devices. In the electronics and photonics industries, it is often desirable to grow stable oxides on such a compound semiconductor substrate. Unfortunately, natural oxides, such as sacred oxides or gallium oxides, are often unstable and the interface state density is too high to have the characteristics of a complementary metal oxide semiconductor (CMOS) type. Therefore, there is a need for a semiconductor structure and a manufacturing process to fabricate a structure of a high-quality single crystal compound semiconductor substrate having a stable oxide formed thereon. The drawings are briefly explained, the present invention is illustrated by way of example, and includes similar elements as referred to in the reference materials without being limited to the accompanying drawings, in which Figures 1-3 illustrate the device structure according to specific embodiments of the present invention in cross-section;- 4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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Line 497209 A7 B7 V. Description of the invention (2 Figure 4 illustrates the relationship between the main film and the growth layer in the main crystal and the layer of the mouth, the maximum film: and the degree and lattice mismatch; 5 illustrates that according to a specific embodiment of the present invention, the sentence iT, F a ^ ^ ^ ^ ^ ^ 3 device structure of the pole, source and drain k domain; Figure 6 is similar to Figure 5, further illustrating that only households according to the present cigarette "I also specifically implement you, including the device structure of the gate, source, and drain regions I formed on the iv single-crystal semiconductor substrate ρΕ1, .... s ^. Those skilled in the art will agree that Simple and slag, the elements in the picture are not drawn to scale. For example, compared to other elements, the dimensions of many elements in the figure are exaggerated to assist the agricultural reform A person understands the specific paste embodiments of the present invention. ^ FIG. 1 illustrates, in cross section, a part of a semiconductor structure 100 according to various embodiments of the present invention. The semiconductor structure 100 includes a single crystal compound semiconductor layer 101, a The oxide template layer 103 and a single crystal alkaline earth are all oxide layers 105. Herein, the term "single crystal system" should have the meaning generally used in the semiconductor industry. This term should mean that the semiconductor crystal semiconductor layer 100 is a single crystal compound semiconductor Crystalline compound semiconductor substrates, such as gallium arsenide substrates. Generally, any natural oxides (such as gallium oxide) are removed from the surface of single crystal compound semiconductors. This paper is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm).

Materials found in the bookbinding industry that are sufficiently monocrystalline or substantially monocrystalline, and should include those with relatively small amounts, are often found in substrates of shredded, germanium, or a mixture of silicon and germanium, and the epitaxial layers of these materials. Defective materials such as dislocations.

Line A7 I-- ~~ ___ B7 V. Description of the Invention (3) Objects) ^ ^ into the deified gallium substrate of natural oxides. After that, by using an atomic layer, the surface of the single crystal compound semiconductor layer 101 can be grown epitaxially on the single crystal compound semiconductor layer 101, such as a gallium arsenide substrate. Template layer 103 (and subsequent single crystal alkaline earth metal oxide layer 105). In this regard, for example, terminating the surface of the single crystal compound semiconductor layer with gallium, aluminum, or indium (depending on the material selected as the compound semiconductor layer 101) allows the termination layer 102 to be formed. The stop layer ι02 allows a stable, high dielectric constant or medium dielectric constant oxide to be grown on the single crystal compound semiconductor layer 101. In addition, the termination layer 102 helps the growth of the oxide template layer 103 on the initial single crystal compound semiconductor layer 101. In this way, the termination layer 102 helps alleviate the stress that may otherwise occur in the oxide template layer 1 due to the difference in the number of lattice reeds of the single crystal compound semiconductor and the oxide template layer. Reducing the stress of the oxide template i 〇 3 helps the growth of the single crystal alkaline earth metal oxide layer 105 with the same crystal quality. The termination layer 102 may form part of the oxide template layer 1, but for the purpose of description, it is still described as a separate layer. By way of illustration, if the single crystal compound semiconductor layer 10 is a gallium arsenide substrate, the single crystal compound semiconductor layer 101 can be terminated by forming a 102 layer containing gallium, and then the 102 layer is exposed to the gill and In oxygen, a single-layer oxide template layer with a thickness in the range of about 4-5 angstroms is formed. As such, for example, the termination layer 102 may be exposed to the gill (or barium) gallium oxide layer to help the oxide template layer 103 grow. The termination layer 102 is exposed to alkaline earth metal and oxygen, and will form an alkaline earth metal-gallium-oxygen form (such as strontium gallium strontium tetraoxide (SrGa2 04) or tetraoxide) on the single crystal compound semiconductor layer 101 -6-This paper size applies Chinese National Standard (CNS) A4 specification (210X297 public love) 497209 A7 ________ B7 V. Description of the invention (4) Barium digallium oxide (BaGa2 04)) oxide template 103. To further illustrate this example, the oxide template layer 103 may include the use of a single layer of gill oxide (such as oxidized gills (Sr * 0)), followed by a layer of titanium oxide (such as titanium dioxide (Ti02)). Of course, the oxide template layer 103 may be one or more single-layer thick, such as about 1 to 10 single-layers. In this way, for example, the oxide template layer 103 will provide a substantially stable oxide for the application of complementary metal oxide semiconductors (CMos). Once the oxide template layer 103 is formed, a single crystal soil test metal oxide layer 05 can be formed on the oxide template layer 103. Appropriate single crystal alkaline earth metal oxide layer 105 materials are chemically bonded to selected positions on the surface of the oxide template layer i 03 to provide subsequent monocrystalline alkaline earth metal oxide layer 105 epitaxial growth. Nucleation position. The single crystal alkaline earth metal oxide layer 105 is preferably a single crystal oxide or nitride material that is compatible with the crystals of the underlying layer. The resulting single crystal alkaline earth metal oxide layer 105 may have a thickness of about 2 to 100 nanometers, for example, about 5 to 10 nanometers. For example, the material may be an oxide or nitride that has a lattice structure that essentially matches the underlying layer and any subsequent materials applied to it. By way of illustration, the single crystal soil test metal oxide layer 105 may be in the form of gill-barium-titanium-oxygen (ShBakTiC ^, where X varies from 0 to 1), alkaline earth metal tin oxide (such as tin trioxide lock (BaSn03 )), And / or the like. Fig. 2 illustrates in cross section a portion of a semiconductor structure 200 according to a further embodiment of the present invention. The structure 200 is similar to the semiconductor structure 100 described above. In addition, the structure 200 also includes an impurity-doped layer located in the single crystal compound semiconductor layer 101 and an oxide doped layer under the oxide template layer 103. This paper is applicable to China Standard (CNS) A4 specification (210 X 297 mm) 497209 A7 _______B7 5. Description of the invention (5) (or impurity-doped region) 207. The impurity doped layer 207 is typically a compound semiconductor material (such as gallium arsenide), including type or p-type doping or impurities (such as silicon) commonly used in complementary metal oxide semiconductor (CMOS) manufacturing. According to a specific embodiment of the present invention, in the single crystal compound semiconductor layer 101, the j-plane between the single crystal compound semiconductor layer and the oxide template layer is opened; Into an impurity doped layer 207. Generally, the impurity impurity layer 2007 has a large thickness in the range of 5,500 nanometers, which is slightly different from that of a single layer. For example, the impurity doped layer 207 provides an active region for making a transistor. As illustrated in FIG. 5, a source region 217 and a drain region 219 may be formed in the impurity doped layer 207 through doping, diffusion, or ion implantation to form a structure 5 ′. Once the source 217 and drain 219 regions are formed in the impurity doped layer 207, and 103 and 105 layers are formed on the 207 layer, a conductive electrode 2 1 5 can be formed on the single crystal alkaline earth metal oxide layer 105. (Such as gate, patterned metal electrode, etc.), and in line with the source 217 and drain 219 regions, to provide an insulated gate structure of the insulated field effect transistor. FIG. 3 illustrates, in cross section, a portion of a semiconductor structure 300 according to another embodiment of the present invention. The structure 300 is similar to the structures 100 and 2000. In addition, the structure 300 includes an oxide template layer 309, a group IV single crystal semiconductor substrate 3 1 1 and a selective impurity doped layer 2 〇7. According to a specific embodiment of the present invention, the structure 300 also includes an amorphous intermediate layer 3 15 located between the group IV single crystal semiconductor substrate 31 and the oxide template layer 309. During the growth of the oxide template layer 309, the group IV single crystal system semiconductor substrate 3 丨 丨 is oxidized by the group IV single crystal system semiconductor substrate 3 1 1 between the group IV single crystal system semiconductor substrate 3 11 and Growth oxide template layer 309-8-Gu paper scale Shicai SS home materials (CNS) A4 specification (2l0x 297 mm)

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Line 497209 A7 B7 V. Description of the Invention (7) Compounds or nitrides. The oxide template layer 309 is preferably grown on the underlying substrate. Once the oxide template layer 309 is formed, the single crystal compound semiconductor layer 101 can be epitaxially grown on the oxide template layer 309. The oxide mold layer 309 may be one or more single-layer thick, for example, having a thickness of about 1010 single layers. The structure 300 also includes a termination layer 3 13 between the oxide template layer 309 and the single crystal compound semiconductor layer 101. By terminating (ie, stabilizing) the oxide template layer 309 with a single layer of gill (or barium) oxide (such as oxygenated 4S (SrO) or oxide pin (BaO)) or oxo oxide (such as dioxide ') A stop layer 313 is formed on the surface, and a single crystal compound semiconductor layer 101 can be epitaxially grown on the oxide template layer 309. In this aspect, the surface of the termination oxide template layer 309 allows a termination stop layer 313 to be formed. The stop layer 3 13 promotes the growth of the single crystal compound semiconductor layer 101 above the oxide template layer 309. The termination layer 3 1 3 may form part of the oxide template layer 309; however, for the purpose of description, it is convenient to describe the 313 layer as a separate layer. As discussed above with reference to Figs. 1 and 2, a continuous layer can be formed on the single crystal compound semiconductor layer 101. In addition, FIG. 6 illustrates a specific embodiment of the present invention. The structure 600 is similar to the structure 500 except that the structure 600 further includes a gate electrode 221, a source electrode 223, and a sum electrode 225 formed on the ... group single crystal semiconductor substrate 31. . In addition to the structural characteristics illustrated in Figures 1-3, Figure 4 graphically illustrates the relationship between the reachable thickness of a crystalline layer grown with high crystalline quality as a function of the lattice constant mismatch between the main crystal and the grown crystalline layer. Curve 40 1 illustrates the boundaries of high crystalline quality materials. The area to the right of the curve 401 indicates the layer with a large number of defects. Without lattice mismatch, in theory, an infinitely thick, high-quality insect may grow on the main crystal — -10- This paper size applies to China National Standard (CNS) A4 (210X297 male sauce) 497209

:Floor. As the lattice constant mismatch increases, the high-quality lattice layer rapidly decreases :: as a reference point, for example, if the lattice between the main crystal and the growth layer: number mismatch exceeds about 2% 'then it exceeds about 2 The single crystal epitaxial layer of 〇 nanometer may contain defects. According to a specific embodiment of the present invention, it is only a single-crystal compound semiconductor layer 101 (100) crystal orientation of a single crystal system arsenic mirror T chemical grazing day, and the oxide template layer 103 is a layer Barium titanate gills. The substantial matching of the lattice constants between these two materials is achieved by rotating the titanate (such as gill titanate, barium titanate, etc.) material to the crystal orientation of the Kunhua substrate wafer by 45 degrees. . Each crystal structure of a single crystal substrate is characterized by crystal constants and lattice orientation. Similarly, the oxide template layer 103 is also a single crystal system material, and the crystal lattice of this single crystal system material is characterized by a lattice constant and a lattice orientation. The lattice constant of the oxide template layer 103 and the single crystal substrate must be substantially matched, or the substantial matching of the lattice constant must be achieved by rotating one crystal orientation to another lattice orientation. In this article, the term "substantially equal" and "substantially matched" means that there is sufficient similarity between the lattice constants, and that the growth of the crystalline layer of the final quality is allowed on the 7 layers. In order to achieve high crystal quality in the epitaxially grown single crystal alkaline earth metal oxide layer 105, the oxide template layer 103 must be of high crystal quality. In addition, 'in order to achieve high and high crystal quality in the single-crystal soil test metal oxide layer 105', a main crystal (such as a single-crystal compound semiconductor layer) and a growth crystal (such as a single-crystal alkaline earth metal) are required. The oxide layer 105) substantially matches the lattice constants of the crystals. Due to the rotation of the crystal orientation of the growing crystal to the orientation of the main crystal, the substantial matching of this lattice constant can be achieved by proper selection of the material '. If -11- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

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Line 497209 A7 B7 V. Description of the invention (9) The main crystal is gallium gallium, aluminum gallium arsenide, zinc arsenide, or zinc sulfide, and the oxide template layer 103 is a single crystal SrxBa ^ TiC ^, and a crystal is grown. By rotating the crystal orientation of the layer 45 degrees from the orientation of the oxide template layer 103, a substantial matching of the lattice constants of the two materials can be achieved. Similarly, if the material of the oxide template layer 103 is gill or barium hammer acid, total or barium gallate, or barium oxide, and the single crystal soil test metal oxide layer 105 is indium phosphide or indium gallium arsenide Or indium aluminum arsenide, the crystal orientation of the growing crystal layer (ie, the single crystal alkaline earth metal oxide layer 105) is rotated 45 degrees to the main crystal layer to achieve a substantial matching of the lattice constants of the two materials. In some examples, a crystalline semiconductor buffer (or oxide) layer between the main crystal and the growing compound semiconductor layer can be used to reduce the growth of the single crystal alkaline earth metal oxide layer 105, which may be caused by the difference in lattice constants. Caused by stress. Therefore, in the grown single crystal alkaline earth metal oxide layer 105, better crystal quality can be achieved. Referring to Figs. 1-6, the single crystal compound semiconductor layer 101 is a single crystal substrate, such as a single crystal gallium arsenide substrate. For the needs of special semiconductor structures, any IIIA and VA group (III-V semiconductor compound), mixed III-V compound, II (A or B) and VIA group (II-VI semiconductor compound), Among the group II-VI compounds, a compound semiconductor material of the single crystal compound semiconductor layer 101 is selected. For example, the single crystal compound semiconductor layer 101 contains materials from groups III and V in the periodic table. Examples of Group III materials include aluminum, gallium, indium, and the like. Examples of group V include phosphorus, arsenic, tin, and the like. Further examples of suitable compound semiconductor materials include indium gallium arsenide (GalnAs), aluminum gallium arsenide (GaAlAs), indium gallium phosphide-12-This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm) 497209 A7 B7 V. Description of the invention (10) (GalnP), indium aluminum arsenide (AlInAs), indium phosphide (InP), cadmium sulfide (CdS), cadmium mercury telluride (CdHgTe), zinc selenide (ZnSe), Zinc selenide (ZnSSe) and so on. Although not illustrated, according to the present invention, the single crystal compound semiconductor layer 101 may include one or more layers such as Gain As and / or AlInAs in one layer (InP) Above. The single crystal compound semiconductor layer 101 (such as when forming the upper layer 313) may be composed of molecular beam epitaxy, crystal (MBE), chemical vapor deposition (CVD), organic metal chemical vapor deposition (MOCVD), migration enhanced epitaxy ( MEE), atomic layer epitaxy (ALE), physical vapor deposition (PVD), chemical solution deposition (CSD), pulsed laser deposition (PLD), and the like. The stop layer 102 is usually a thin film of gallium, aluminum, or other materials used in the single crystal compound semiconductor layer 101. For example, the termination layer 102 may be a gallium single layer in the gallium arsenide single crystal compound semiconductor layer 101 (or an aluminum single layer in the aluminum gallium arsenide single crystal compound semiconductor layer 101), and is epitaxialized with a molecular beam. (MBE), organometallic chemical vapor deposition (MOCVD), atomic layer epitaxy (ALE), or migration enhanced shivering (MEE). The oxide template layer 103 is preferably a single-crystal oxide or nitride material that is compatible with the crystals of the lower and upper layers. For example, the material of the oxide pattern layer 103 may be an oxide or nitride nitride having a lattice structure that substantially matches that of the substrate and the semiconductor material to be subsequently applied. Materials suitable for use as the oxide template layer 103 include, for example, soil test metal's acid salt, soil test metal sulphate, soil test metal salt, soil test metal salt, soil test metal ruthenate, soil test Metal oxides, metal oxides of soil test metal salts, such as soil test metal tin-based # 5'ore # 5 chin oxide, lanthanum acid salt, oxide sharp-13- This paper size applies to Chinese national standards (CNS) A4 size (210X297 mm)

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4972UV 11 V. Description of the invention (La and dysprosium dioxide. In addition, various nitrides, such as gallium nitride, nitride and nitrogen = can be used as the oxide template layer 103. For example, although the nail acid identification guide group 'Most of these materials are ^ ^ $ 介 你 $ 八 Ｍ " 疋 ,, 巴, 豕 豕. Some materials are suitable for metal 2 :: belongs to nitrides, more specifically these metal oxides or nitrides I: to ^ two different metal elements, and have a perovskite structure. In some specific applications, metal oxides or nitrides may contain two or more different metal elements. For example, How can the oxide template layer 10 contain elements from the single crystal compound semiconductor layer HH and oxygen. As a further explanation, the oxide template layer 103 may be A-gallium-oxygen (A-Ga_〇) on the gallium substrate. And / or the form of A · chain · oxygen (α · αι · 〇), or the A_indium-oxygen (Α 七 -〇) form of the indium phosphide substrate, where A is an alkaline earth f. This is- In point of view, the oxide template layer 103 may be a thin layer (such as a single layer) of A-Ga-o. The oxide template layer 103 is one step further. Examples include gill gallium oxide (such as gallium tetroxide gill, SrGaWd, barium gallium oxide (such as barium gallium tetroxide, BaGa204)), a thin layer of gallium, and a thin layer of gill oxygen (sb 0). Layer, a thin layer of gallium and a thin layer of barium-oxygen (Ba-〇), a thin layer of indium-tin-oxygen, a thin layer of tin-indium-oxygen (such as indium tin tetraoxide, SnIrl204), and / Or a thin layer of indium and a thin layer of tin-oxygen (Sn_0) (where "thin layer" means about a single layer). The oxide template layer 103 may grow epitaxially on the lower layer. For example, using Any of the methods discussed above to form the 101 layer. Metal oxides suitable for use as a material for the single crystal soil test metal oxide layer 105, including alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metals Metal oxides of acid salts, alkaline earth metal osmates, alkaline earth metal ruthenates, alkaline earth metal niobates, and earth test metal vanadates, such as alkaline earth metal tin-based titanium 14-497209 A7 B7 V. Description of the invention (12 ) Ore, perovskite oxide, lanthanum aluminate, lanthanum oxide and hafnium oxide. In addition, various nitrides, such as gallium nitride, aluminum nitride and Boron can also be used as a monocrystalline soil test metal oxide layer 105. For example, although iron nail acid is a conductor, most of these materials are insulators. Usually these materials are metal oxides or metal nitrides, and more In particular, these metal oxides or nitrides usually contain at least two different metal elements. In some specific applications, metal oxides or nitrides may contain three or more different metal elements. In many other processes, The single crystal alkaline earth metal oxide layer 105 may use molecular beam epitaxy (MBE), organic metal chemical vapor deposition (MOCVD), atomic layer epitaxy (ALE) or migration enhanced epitaxy (MEE). Worm crystals grow on the layer 103. The Group I V single crystal system semiconductor substrate 3 11 according to a specific embodiment of the present invention is a single crystal system semiconductor wafer, which is preferably a large diameter. Such a wafer may be a material from Group I V of the periodic table, and a material from Group IVA is preferred. Examples of the IV semiconductor material include silicon, germanium, mixed silicon and germanium, mixed silicon and carbon, mixed silicon, germanium and carbon, and the like. The preferred Group I V single crystal semiconductor substrate 3 11 is a wafer containing silicon or germanium, and a high-quality single crystal silicon wafer used in the semiconductor industry is the best. Metal oxides suitable for use as materials for the oxide template layer 309, including, for example, soil test metal's acid salt, soil test metal hydrate, soil test metal salt, soil test metal Is salt, soil test metal nail Acid salts, soil test metals, and metal oxides of soil test metals, such as metal oxides of the soil test metal tin-based matechin mine, lanthanum aluminates, lanthanum hafnium oxide, and hafnium oxide. In addition, various nitrides, such as gallium nitride, aluminum nitride, and boron nitride can also be used as the oxide template layer _-15- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 497209

3 09. For example, although strontium ruthenate is a conductor, most of these materials are. Usually these materials are metal oxides or metal nitrides, and even more peculiarly, these avian oxides or nitrides usually contain at least two different metal elements. In some specific applications, metal oxides or nitrides may contain three or more non-@@ metal elements. An appropriate oxide template material is chemically bonded to a selected position on the surface of the oxide template layer 309 to provide a nucleation site for subsequent epitaxial growth of the single crystal compound semiconductor layer 101. Examples of the oxide template layer 309 include gill titanium oxide (titanium oxide t'SrTi03), barium titanium oxide (barium titanium oxide, BaTi03), and the like. Suitable materials as the termination layer 313 of the gallium arsenide substrate include strontium-oxygen (&amp; _〇), ―oxygen (Ti-ο), gallium-iron, (Ga-Sr_〇) hi oxygen (As_s``〇), Number · Atomic layers of arsenic-oxygen (Tb-As-〇), titanium-gallium-oxygen (Ti-Ga_〇), etc. Another example = includes termination of a single crystal compound semiconductor layer 101 with indium, and By depositing a single layer of indium, the indium layer of the single crystal compound semiconductor layer is exposed to tin and milk gas to form an indium_tin_oxygen (1-core Sn-O with one or more single layers). ) Oxides. Suitable materials for the 3 n of the indium phosphide substrate stop layer include barium -'- oxygen (Ba-T), indium -'- oxygen (In-Sn-〇), and indium- (Inu). Atomic layers, etc. The following example illustrates a process for manufacturing a semiconductor structure with the structure as described in Figs. 1, 2 and 5 according to a specific embodiment of the present invention. For example, this process starts with providing a A single crystal compound semiconductor substrate containing gallium arsenide or indium phosphide. According to a specific embodiment of the present invention, the compound semiconductor substrate is a gallium gallium wafer having a (100) crystal orientation. This substrate is based on Off-axis to or at most about 2-6 degrees is better. As described below, although other parts can be----- ______- 1 6 _ this paper rule Qi Cai_ ^: 料 (CNS) A4 ^ (2i〇7i ^^) 497209 A7 B7 V. Description of the invention (14) It can contain other structures, at least a part of the compound semiconductor substrate has a bare surface. In this article, the term "bare blank" means that the surface of a part of the substrate has been cleaned to remove any oxidation. Materials, contaminants, or other unrelated materials. It is well-known to us that bare-spaced gallium KunFan is highly reactive and rapidly forms a natural oxide. The term "bare empty" tends to include this natural oxide. In order to epitaxially grow a single crystal oxide layer on a single crystal compound semiconductor substrate, this natural oxide layer must first be substantially removed to expose the crystal structure of the underlying substrate. Although other epitaxial processes can also be used in accordance with the present invention, the following processes are preferably implemented with molecular beam epitaxy (MBE). Natural oxides can be removed by thermal desorption, in which the substrate is heated to about 600-650 degrees Celsius in a continuous stream of arsenic to obtain a substantially arsenic stable surface. At this time, the arsenic flow is usually closed, thus creating a gallium-stabilized surface (such as a termination layer). The resulting surface is a gallium, oxygen-free surface. High-energy electron deflection (RHEED) can be used to monitor the change from the Kun stable surface to the gallium stable surface. In this example, the resulting surface presents an ordered 4 × 2 gallium stabilization structure with a gallium termination layer (such as an atomic layer). A stoichiometric surface is required to maintain the stability of this plane. At this time, in molecular beam epitaxy (MBE) devices, the termination layer may be exposed to thallium, barium, a combination of gills and barium, or other alkaline earth metals or combinations of alkaline earth metals. In the case of strontium, the substrate is then heated to a temperature of about 400-650 degrees Celsius. The surface exhibiting an ordered 4x2 structure contains strontium, oxygen, and gallium. Due to the orderly growth of the upper layer of the single crystal oxide, this orderly 4x 2 junction is deaf to form an oxygen 4 dagger, and it is not reversed (such as a single layer). The oxide is only -17- This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 497209 A7 B7 V. Description of invention (15) The chemical and physical properties required for nucleation of upper crystal growth. According to another embodiment of the present invention, an alkaline earth metal oxide such as gill oxide, gill barium oxide, or barium oxide is deposited on the substrate surface by molecular beam epitaxy (MBE) at a low temperature, and then this structure is heated to a temperature At about 400-6 ° C, natural oxides can be removed, and the surface of a substrate used to grow a single crystal oxide layer can be prepared. At this temperature, a solid state reaction occurs between the oxidized gills and the natural oxides, causing a reduction in the natural oxides, and leaving an ordered 4x2 structure remaining on the surface of the substrate containing strontium, oxygen, and gallium. Once again, a template is formed for the subsequent growth of the ordered single crystal oxide layer. According to a specific embodiment of the present invention, immediately after removing the natural oxide (such as gallium oxide) from the substrate surface and the termination of the substrate surface (such as using gallium), the substrate is cooled to a range of about 300-650 degrees Celsius. The temperature and the molecular beam worm crystal (MBE) on the template layer to grow a layer of acid. The Molecular Beam Worm Crystal (MBE) process begins with opening the shutter shutter in the molecular beam epitaxial device to exposure to total, tritium, and oxygen sources. The ratio of 4th thought to "is about 1: 1. The oxygen partial pressure is initially set to a minimum value, and the stoichiometric titanate gills are grown at a growth rate of about 0.3-0.5 nanometers per minute. After the initial growth of strontium titanate, the oxygen partial pressure increases above the initial minimum. Qin acid sharply grows into an ordered single crystal, and has a crystal orientation that rotates 45 degrees to the ordered 4 × 2 crystal structure of the underlying substrate. As described above, if the lattice constant mismatch between the main crystal and the growing crystal exceeds about 2%, the single crystal system epitaxial layer exceeding about 20 nm may be defective. Alternatively, according to a specific embodiment of the present invention, an impurity doped layer may be formed to provide an active region immediately after the gallium oxide is removed on the surface of the substrate. This paper size is applicable to China National Standard (CNS) A4 specifications ( 210 X 297 mm) 5. Description of the invention (16 or more specifically, this active region allows the subsequent development / source formation of the source region and the polar region. Or, for example, by doping a part of the substrate, These regions are formed before the gallium oxide is removed. For each change in the subtractive semiconductor material and the single crystal oxide layer, an appropriate template is used to initiate the growth of the subsequent layers. For example, if the compound semiconducting m material Is indium gallium, indium or hafnium indium, the termination layer and: or the template oxide may each contain a thin layer of gallium, indium or indium; each of the precursors of the metal oxide is tested. Each of these Deposition helps to form a template for the deposition of a single-crystal alkaline earth metal oxide layer. ',, According to another embodiment of the present invention, the process of manufacturing a conductor structure of structure 4 as described in Figs. 3 and 6 is described. This process begins with mention -Composed of Shi Xi or germanium (single crystal system semiconductor substrate. According to a preferred embodiment of the present invention, a 'semiconductor substrate is a silicon wafer having a (100) crystal orientation. This substrate is axial or at most about 0.5-6 degree off-axis is better. As described below, although other parts may include other structures, at least a part of the semiconductor substrate has a bare surface. In this case, the term "bare blank" means that a part of the substrate has been cleaned. Table = to remove any oxides, contaminants, or other irrelevant materials. The hard crystalline S of bare 2 is highly reactive and will form rapidly. Natural oxides are already well known to us. The word tends to include this natural oxide. It is also possible to intentionally grow a thin silicon oxide on a semiconductor substrate, although this grown oxide is not necessary for the process according to the invention. To grow epitaxially on a single crystal substrate For single crystal oxide layer, this natural oxide layer must be removed first to expose the crystal structure of the underlying substrate. Although other epitaxial processes can be used according to the present invention, 497209 A7 B7 5 Description of the invention (17) The following process is preferably implemented with molecular beam worm crystal (MBE). In a molecular beam epitaxial device, natural oxides can first be deposited by thermal deposition of a thin layer of gills, pins, total and barium mixtures, Or other soil test metal oxides, or a mixture of soil test metal oxides. In the case of gills, the substrate is heated to a temperature of about 750 degrees Celsius to make strontium react to the natural silicon oxide layer. The iron system is used to reduce broken oxides to leave an oxide-free surface. The resulting surface shows an ordered 2 X 1 structure and contains gills, oxygen, and silicon. Because of the ordered upper layer of the single crystal oxide, Grow, this ordered 2 X 1 structure forms a template. This template provides the chemical and physical properties required for the growth of the nucleated upper crystal. According to another embodiment of the present invention, molecular beam epitaxy is performed at low temperature. Detecting metal oxides such as total oxides, total barium oxides, or oxide pins on the surface of the substrate, and then heating this structure to a temperature of about 750 degrees Celsius, so that natural broken oxides can be converted, and single oxides can also be prepared. Oxide-based layer grown on the surface of the substrate. At this temperature, strontium oxide reacts with the natural silicon oxide in a solid state, reducing natural crushed oxides, and leaving an orderly 2 X 1 structure of iron, oxygen, and crushing remaining on the surface of the substrate. Once again, a template is formed for the subsequent growth of the ordered single crystal oxide layer. According to a specific embodiment of the present invention, immediately after the silicon oxide is removed from the substrate surface, the substrate is cooled to a temperature in the range of about 200-800 degrees Celsius, and a molecular beam epitaxial layer is grown on the template layer. Titanate gills. The molecular beam epitaxy (MBE) process starts with opening the shutter shutter in the molecular beam epitaxy device with exposure to the oxygen source. The ratio of Rui to "is about 1: 1. The oxygen partial pressure is initially set to a minimum value of about -20 to 0.3-0.5 nanometers per minute. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) A7 V. Description of the invention (18 ^ Titanium rhenium measured by MM. Initialized osmium acid grows in total! Beauty: = Increased above the initial minimum 値. Overpressure oxygen is below ...: The interface between the total amount of acid &quot; causes the amorphous tender i to go down : The growth of siliceous material layer is the result of oxygen expanding from the growing barium titanate layer to the interface between oxygen and silicon on the slab surface. Titanate gills are 'ordered <single print' and have Ordered 2χ 1 crystal structure makes a 45-degree rotated crystal orientation. In the amorphous interlayer of Shixue oxide, it has been alleviated or it may exist in titanium due to a slight mismatch between the broken substrate and the lattice constant of the growing crystal The stress of the acid gill layer. When the acid layer grows to the required thickness, the single crystal system ’s acid crystal is covered by a template layer that helps: the subsequent growth of the desired epitaxial layer of the compound semiconductor material. For the subsequent layer of arsenization The growth of gallium, by using a single layer Layer Qin-oxygen or 1-2 layers of single gill-oxygen to stop growth, molecular beam epitaxy (MBE) overlying ^ titanate gill single crystal system layer grows. After this termination (or cover) layer is formed, doping Arsenic is formed to form a titanium (t)-(Ti-As) bond, a titanium-oxygen-arsenic (Ti-0-As) bond, or a gill-oxygen (_Sr_〇_As) bond. Any of these may be used. Form a suitable template for the deposition and formation of the gallium arsenide single crystal system layer. After the template is formed, gallium is subsequently introduced to react with the kunqi to form gallium arsenide. Alternatively, gallium can be deposited on the cover layer to form gills_ oxygen_ The gallium (Sr_〇_Ga) is bonded, and then arsenic is introduced to form gallium arsenide with gallium. Once the gallium arsenide layer is formed, the subsequent layers described in Figs. 1, 2 and 5 can be formed according to the above process. The following operations Restrictions and exemplifying examples illustrate various combinations of materials that are beneficial to the structures 100, 200, and 300 according to various alternative embodiments of the present invention. These examples are merely illustrative, and the present invention should not be exemplified by these ________- 21- This paper size applies to China National Standard (CNS) A4 specifications (21〇i 297 public reply) _ 497209

Case restrictions. Example 1 According to a specific embodiment of the present invention, a single crystal compound semiconductor layer

Install a GaN (100) orientation GaAs substrate. Such a gallium arsenide substrate, for example, may be a substrate generally used for manufacturing complementary metal oxide semiconductor (CMOS) integrated circuits and other compound semiconductor devices. According to this embodiment of the present invention, the termination layer 102 is a gallium atom layer, which is exposed to the gills and oxygen to form an oxide template layer 103. In this regard, the oxide template layer 103 is a single crystal layer of gallium-strontium-oxygen (such as gallium tetraoxide gill, SrGa204). Or, if the termination layer 10 is exposed to gills (or barium), titanium, and oxygen, the resulting oxide template layer 10 is SrzBaizTi〇 "where z changes from 0 to 1. Choose 2 of 値 to obtain One or more lattice constants that closely match the corresponding lattice constants of the single crystal compound semiconductor layer 101. Order

According to a specific embodiment of the present invention, a single crystal compound semiconductor layer 101 (as shown in FIG. 3) is a layer of gallium arsenide (GaAs) having a thickness of about 1 nm to about 1 μm (# m). ) Or gallium aluminum arsenide (AiGaAs), and a thickness of about 0.5 μm to 10 μm is preferred. This thickness usually depends on the application of the layer to be prepared. In order to promote the epitaxial growth of the single crystal oxide on gallium arsenide or aluminum gallium arsenide, the oxide template layer 103 is formed by covering (ie, terminating or stabilizing) the single crystal compound semiconductor layer 101. In this exemplary embodiment of the present invention, the oxide template layer 103 is preferably a single layer of gill gallium oxide (such as gallium tetraoxide, SrGa204). According to this specific embodiment of the present invention, once the oxide template layer 10 is formed, a single-crystal alkaline earth metal oxide-22 can be formed on the oxide template layer 103- This paper is applicable to the Chinese National Standard (CNS) A4 Specifications (210 X 297 mm) 497209 A7 _____B7 _ 5. Description of the invention (20) Layer 1 05. In this exemplary embodiment, the single-crystal alkaline-earth metal oxide layer 105 is fin ... titanium · oxygen (titanium oxide gill). Example 2 According to a further embodiment of the present invention of Example 1, the impurity doped layer 207 is formed in or on the single crystal compound semiconductor layer 100 and any event under the oxide template layer 309. According to this exemplary embodiment, the impurity doped layer 207 is a layer of gallium arsenide, and its doping is to provide a source and a drain for the transistor. Example 3 According to a specific embodiment of the present invention, the single crystal compound semiconductor layer 101 is an (100) orientation indium phosphide substrate. Such an indium phosphide substrate, for example, may be a substrate generally used for manufacturing a complementary metal oxide semiconductor (CMOS) integrated circuit. According to this specific embodiment of the present invention, the termination layer 102 is an indium atomic layer, using molecular beam epitaxy (mbe), organometallic chemical vapor deposition (MOCVD), atomic layer epitaxy (ALE) or migration enhanced epitaxy. Crystals (MEE) are formed and exposed to tin and oxygen to form an oxide template layer 103. In this regard, the oxide template layer 103 is a single crystal system layer of indium-tin-oxygen (such as In-Sn-O). Alternatively, if the termination layer 102 is exposed to gills (or barium), titanium, and oxygen, the resulting oxide template layer 103 is SrzBa1-zTi03, where z changes from 0 to 1. The value of z is selected to obtain one or more lattice constants that closely match the corresponding lattice constants of the single crystal compound semiconductor layer 101. According to this specific embodiment of the present invention and as illustrated in FIG. 3, the single crystal compound semiconductor layer 100 is a layer having a thickness of about 1 nanometer to about 100 micrometers (qm) _______- 23- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) 4y / zuy

Which? Degrees of indium phosphide, and a thickness of about 0.5 microns to 10 microns is preferred. This thickness will generally depend on the application of the layer to be prepared. In order to promote the epitaxial growth of the single crystal oxygen indium oxide substrate, the oxide template layer ⑺3 is formed by coating | (that is, winter stop or footing) the single crystal compound semiconductor layer 1 0 1 . In this exemplary embodiment of the present invention, the oxide template layer 103 is preferably a single layer of 1 · 10 (such as a single layer of υ) tin indium oxide. According to this specific embodiment of the present invention, once the oxide template layer 103 'is formed, it can be molecular beam epitaxy (μβε), organometallic chemical vapor deposition (MOCVD), sublayer crystal (ALE), or migration enhanced system. Mee method, a single crystal soil test metal oxide layer 105 is formed on the emulsion template layer 103. In a specific example that can be emulated here, the single crystal soil test metal oxide layer 105 has About 8] i nanometer thickness of alkaline earth metal tin oxide. Example 4 According to a further embodiment of the present invention of Example 3, the impurity doped layer 207 is formed in or on the single crystal compound semiconductor layer 101 and in any event under the oxide template layer 309. According to this exemplary embodiment, the impurity doped layer 207 is a layer of gallium (or gallium indium aluminum) on the indium phosphide substrate, and its doping is to provide a source and a drain for the transistor. In addition, on the single crystal alkaline earth metal oxide layer 105, a patterned metal electrode may be formed. In the foregoing detailed description, the invention has been described with reference to specific embodiments. However, those skilled in the art will generally find that various modifications or changes can be made without departing from the scope of the invention proposed in the scope of the patent application below. -24-_ This paper size applies the Chinese Standard (CNS) A4 specification (210X29 ^ mm) -------- 497209 A7 B7 V. Description of the invention (22). As mentioned before, the patent specification and drawings should be exemplified, but not intended to be limiting, and all such modifications are intended to be included in the scope of the present invention. Regarding the benefits, other advantages, and problems of particular embodiments The solution has been described above. However, these benefits, advantages, solutions to problems, and any benefits, advantages, or solutions that may occur or become more significant. Any component that is significant is not analyzed to explain any of the scope of the patent application or All critical, required, or necessary features or components. As used herein, the terms "including", "including", or any other variation thereof, tend to cover non-exclusive inclusions. In this way, processes, methods, documents, or devices include an ingredient, not just those components Part, and may include processes, methods, documentation, or other components of the device that are not explicitly listed or original. ___- 25- This paper size applies to China National Standard (CNS) A4 (210X 297mm)

Claims (1)

497209 888 8 ABC0 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. Application scope of patents 1. A single crystal oxide structure including: a single crystal compound semiconductor layer; on &gt; formed in a single crystal compound semiconductor layer The above oxide template layer contains oxygen and an element from a single crystal compound semiconductor layer; and a single crystal alkaline earth metal oxide formed on the template layer. 2. The single crystal oxide structure according to item 1 of the patent application scope, further comprising an impurity doped layer in the single crystal compound semiconductor layer formed under the oxide template layer. 〇 If the single crystal oxide structure of item 2 of the patent application scope, wherein the single crystal soil test metal oxide forms the gate dielectric of the insulating gate field effect transistor. 4. The single crystal oxide structure according to item 丨 of the patent application scope, further comprising: a group IV single crystal semiconductor substrate; and a second epitaxially grown on the substrate and below the single crystal compound semiconductor layer. A single crystal oxide has a single crystal compound semiconductor layer epitaxially grown thereon. 5. The single crystal oxide structure according to item 1 of Shenqiao's patent scope, wherein the single crystal compound semiconductor layer includes a member selected from the group consisting of indium gallium arsenide (GaInAs) and indium aluminum arsenide (AlInAs). The single crystal compound semiconductor layer contains an indium phosphide (lnp) single crystal layer under the single crystal compound semiconductor layer. 6. The single crystal oxide structure according to item 5 of the patent application scope, wherein the oxygen- 26- This paper size applies to China National Standard (CNS) A4 (210 X 297 public love) J ------------ clothing -------- order ------ --- line (Please read the notes on the back before filling this page) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 497209 A8 B8 C8 D8 VI. Patent Application Scope The template layer contains a layer selected from A-Ga_〇, A_As-〇, and A-Αΐ-〇 (A contains alkaline earth metals). The single crystal oxide structure described in item 1 of the patent application range, wherein the single crystal compound semiconductor layer includes a material selected from the group consisting of gallium arsenide (GaAs), aluminum gallium arsenide (AlGaAs), and indium gallium phosphide (Galnp) ) And so on. 8. The single crystal oxide structure according to item 7 of the application, wherein the template includes a layer selected from the group consisting of A-Ga-O, A-As-O ), And A- | g-oxygen (A-A1-0) (A contains alkaline earth metal). 9. The single crystal oxide structure according to item 8 of the patent application, wherein the alkaline earth metal oxide includes an oxide selected from the group consisting of alkaline earth metal titanates, osmates, zirconates, niobates, and ruthenates. And so on. 10. The single crystal oxide structure according to item 7 of the patent application, wherein the template contains gallium tetraoxide gill (SrGa204). 11. The single crystal oxide structure according to item 7 of the application, wherein the template contains barium gallium tetraoxide (BaGa204). 12. The single crystal oxide structure according to item 7 of the patent application scope, wherein the template contains a thin layer of gallium 'and a member selected from the group consisting of iron-oxygen (Sr-〇) and barium-oxygen (such as -〇) The thin layer of the family. 13. The single crystal oxide structure according to item 12 of the application, wherein the alkaline earth metal oxide contains SrxGa ^ xTiO; and X varies from 0 to 1. 14. The single crystal system oxide structure according to item 1 of the application, wherein the single crystal semiconductor layer contains indium phosphide (InP). 15. The single crystal oxide structure according to item 14 of the application, wherein the template layer includes a thin layer containing indium-tin-oxygen (In-Sn-O). -27- This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ^ -------------------- Order ------ --- line (Please read the precautions on the back before filling this page) Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 497209 A8 B8 C8 ^ _______, apply for patent scope 16. If you apply for patent scope item 丨 5 The single crystal oxide structure, wherein the template layer includes a thin layer of indium tin oxide (SnIn2O4). 17. The single crystal oxide structure according to item 14 of the application, wherein the template layer includes: a thin layer of indium; and a thin layer of tin-oxygen (Sn-O). 18. The single crystal oxide structure according to item 17 of the application, wherein the alkaline earth metal oxide includes an alkaline earth metal tin oxide. 19. The single crystal oxide structure according to item 8 of the patent application, wherein the alkaline earth metal oxide includes barium tin oxide (BaSn03). 20 · —A process for manufacturing a single crystal system oxide structure, including the steps of: providing a silicon-containing single crystal substrate; forming an oxide layer on the substrate; epitaxially growing a single layer on the oxide layer A crystalline compound semiconductor layer; forming an impurity doped region in the single crystalline compound semiconductor layer; forming a template layer on the compound semiconductor layer, the template layer containing an element and oxygen from the compound semiconductor layer; on the template layer A single crystal alkaline earth metal oxide is epitaxially grown; and a conductive electrode is formed on the single crystal oxide. 2 1 · The process of claim 20 in the patent application scope, wherein the step of forming the impurity-doped region includes a step of forming a source and a drain region. 22 · If you apply for the process of item 21 in the scope of patent application, among which -28- C forming the conductive electrode, please read the precautions on the back before filling this page) r .-------- Order ---- ---- 丨 A paper size is applicable to the Chinese National Standard (CNS) A4 specification (21,297 mm) 497209 A8 B8 C8 D8 6. The scope of patent application steps includes forming a gate that is aligned with the source and drain regions Extreme steps. 23. —A process for manufacturing a single crystal oxide structure, comprising the steps of: providing a single crystal compound semiconductor layer containing a material selected from the group consisting of gallium (GaAs), indium gallium arsenide (GaInAs), and A family consisting of AlGaAs, indium aluminum arsenide (AiInAs), indium gallium phosphide (GaInP), etc .; a single crystal system layer is terminated with a termination layer containing a group selected from the group consisting of gallium and aluminum The surface; exposing the termination layer to an alkaline earth metal oxide and oxygen to form a template containing alkaline earth metal gallium-oxygen or alkaline earth metal-aluminum-oxygen on the single crystal compound semiconductor layer; and epitaxially on the template A layer of single crystal oxide is grown, and the single crystal oxide contains an oxide selected from the group consisting of metal titanate, osmate, hammered salt, niobate, and ruthenate. 24. If the process of the scope of application for item 23 is applied, the termination step includes the step of depositing a single layer of gallium by a process selected from molecular beam epitaxy (MBE), organic metal chemical vapor deposition (MOCVD) , Atomic layer epitaxy (ALE) or migration enhanced system crystal (MEE). 25. If the process of claim 23 is applied, the termination step includes the step of depositing an aluminum monolayer by a process selected from the group consisting of molecular beam epitaxy (MBE), organic metal chemical vapor deposition (MOCVD) , Atomic layer epitaxy (ALE) or migration enhanced epitaxy (MEE). 26. If the process of applying for the scope of the patent No. 23, the steps of the deposition include -29- This paper size is applicable to China National Standard (CNS) A4 specifications (21Q x 297) (Please read the precautions on the back first (Fill in this page again) Order --------- Line · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs &quot; Γ7 / 厶 A8 B8 C8 D8 The scope of the patent application is the step of forming a template layer having a thickness of about Mo. A. According to the process of applying for patent 23 items, the epitaxially grown step includes a process of growing a layer of a single crystal oxide having a thickness of about 5-10 nanometers. The process is selected from the molecular beam county Crystal (mbe), organometallic chemical vapor deposition (CVD), atomic layer county crystal (AM) or migration enhanced epitaxial (MEE), etc. It is considered that the process of applying for the scope of the patent No. 23, further includes The step of forming an impurity-doped region in the single crystal compound semiconductor layer. 29. The process of claim 28 in the patent application scope further includes the step of forming a patterned metal electrode on the single crystal oxide layer. 30. If the process of claim 23 is applied, the step of providing a single crystal compound semiconductor layer includes the steps of: providing a single crystal layer of indium phosphide (InP); forming a layer on the indium phosphide (InP) layer Single crystal system layer, the single crystal system layer is selected from the group consisting of indium gallium (GalnAs) and indium aluminum (AlInAs). J 1. A process for manufacturing a single crystal oxide structure, including steps : Provide a scale containing (InP) single crystal compound semiconductor layer; using a layer of indium to terminate the surface of the single crystal compound semiconductor layer; exposing the layer of indium to tin and oxygen to form an indium-tin-oxygen template; and 'in the template' An alkaline earth metal tin oxide is epitaxially grown. 32. As in the process of claim 3, the termination step includes a step of depositing an indium monolayer by a process selected from molecular beam epitaxy (MBE), Organometallic Chemical Vapor Deposition (MOCVD), Atomic Layer. 30- Private paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page ) Order ---------- Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 497209 A8 B8 C8-D8 Patent application scope Shame crystal 3 3 Rucheng formation 34 Rucheng peritectic system Organic migration 3 5 · Ru Shen 36. Ru Shen 4 dagger (ALE) or migratory enhanced epitaxy (MEE), etc. Please apply for the process of item 31 of the patent scope, in which the step of deposition A step including a template layer having a thickness of about 1-2 single layers. Please refer to the process of item 31 in the patent scope, wherein the step of epitaxial growth includes the step of growing a single oxide core layer having a thickness of about 8-11 nanometers by a process selected from the molecular beam epitaxy (MBE) , Metal chemical vapor deposition (M0C VD), atomic layer epitaxy (ALE) or enhanced epitaxy (MEE), etc. The family of the scope of the patent claim 31, further including the formation of a single crystal semiconductor layer An impurity-doped region step. The process of item 35 of the patent scope; the step further includes the step of forming a patterned metal electrode on the single crystal layer. Oxygen 1 · ------------------- Order --------- line (Please read the precautions on the back before filling this page) Intellectual Property of the Ministry of Economic Affairs Printed by Bureau Staff Consumer Cooperatives -31-