TW494425B - Field emission display panel having dual layer cathode and the manufacturing method thereof - Google Patents
Field emission display panel having dual layer cathode and the manufacturing method thereof Download PDFInfo
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494425 五、發明說明α) 【發明之應用領域】 本發明係關於一種場發射顯示面板(F i e 1 d E m i s s i〇η D i s p 1 a y P a n e 1 ; F E D P a n e 1)結構設計及其製造方法,特 別是關於一種在同一基板上具有雙層陰電極以及一陽電極 的埸發射顯示面板及其製造方法。 【發明背景】 近年來,平面顯示器已逐漸被開發並運用在如個人電 腦等各種電子產品上。動態矩陣(a c t i v e in a t r i X)液晶 顯示器為一種常見的平面顯示器,其可提供相當高的解析 度。然而,由於液晶顯示器有許多先天上的限制,在有些 情況上並不適用。例如,液晶顯示器的製程較為複雜,生 產良率較低,且在製程上需要在一玻璃板上缓慢地沉積一 非晶石夕層,而降低生產率。再者,液晶顯示器需要有一營 光背光(b a c k 1 i g h t)模組,由‘於背光模組所產生的光大 部分未被利用而浪費掉所以使得液晶顯示器需要消耗較高 的功率。液晶顯示器所顯示的影像在高亮度的環境或較大 的視角下會不容易被看清楚,此缺點亦進一步限制了液晶 顯示器的運用空間。 為了取代液晶顯示器,近年來已有一些其它種類的平 面顯示面板被開發出來,其中一種即為場發射顯示器。場 φ 發射顯示器解決了液晶顯示面板的一些缺點,相較於傳統 的薄膜電晶體(TFT)液晶顯示面板,場發射顯示器更具 有高對比度、大視角、高最大亮度、低耗電,以及較寬的 操件溫度等優點。場發射顯示器與液晶顯示器的一個較大494425 V. Description of the invention α) [Application field of the invention] The present invention relates to a field emission display panel (Fie 1 d E missi〇η D isp 1 ay Pane 1; FEDP ane 1) structure design and manufacturing method thereof, In particular, it relates to a pseudo-emissive display panel having a double-layered cathode electrode and a positive electrode on the same substrate, and a manufacturing method thereof. BACKGROUND OF THE INVENTION In recent years, flat-panel displays have been gradually developed and applied to various electronic products such as personal computers. Dynamic matrix (ac t i v e in a t r i X) liquid crystal display is a common flat display, which can provide quite high resolution. However, due to many inherent limitations of liquid crystal displays, they are not applicable in some cases. For example, the manufacturing process of the liquid crystal display is relatively complicated, the production yield is low, and the manufacturing process needs to slowly deposit an amorphous stone layer on a glass plate, thereby reducing the productivity. In addition, the liquid crystal display needs a light backlight (b a c k 1 i g h t) module. Most of the light generated by the backlight module is not used and wasted, so the liquid crystal display needs to consume higher power. The image displayed by the liquid crystal display may not be easily seen in a high-brightness environment or a large viewing angle, and this shortcoming further limits the application space of the liquid crystal display. In order to replace the liquid crystal display, other kinds of flat display panels have been developed in recent years, and one of them is a field emission display. Field φ emission displays solve some of the shortcomings of liquid crystal display panels. Compared to traditional thin film transistor (TFT) liquid crystal display panels, field emission displays have higher contrast, larger viewing angles, higher maximum brightness, lower power consumption, and wider Operating temperature and other advantages. A larger field emission display and LCD display
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五、發明說明(2) 的差異在於,場發射顯示器藉由彩色螢光層自行發光,而V. Description of the invention (2) The difference is that the field emission display emits light by itself through the color fluorescent layer, and
不需要液晶顯示器較為複雜且耗能的背光(b a c k 1 i g h t J 以及濾光片模組。且場發射顯示面板所產生的光幾乎全部 可成為使用者可以看見的光。另外,埸發射顯示器亦不需 要龐大的薄膜電晶體陣列,因此可避免動怨矩陣(a十· 、α ^ 1 1 V 6 m a t r i X)液晶顧示器成本高以及良率低的問題。 場發射顯示器的發光原理,係藉由一陰電極發射出電 子撞擊塗佈於一透明蓋板背面的螢光劑而產生陰極螢光 (cathodoluminescent)。此種發光方式具有極高的發光 效率。相對於傳統的陰極射線管(CRT)裝置,場發射顯 示面板的每一個相素(pixel)或發射單元(emission un i t)都具有獨自的電子發射源,通常即為,發射微尖端 (microtips)陣列。利用一控制電極與該陰電極之間的 電位差而使電子被吸弓丨並加速而·撞擊該螢光劑塗層。由於 =子發射源的材料之功函數(work f unc t i 〇n)對於發射 ,流以及顯示亮度有很大的影響。因此為了使場發射顯示 =^到所需的效率,電子發射源材料之均勻度與潔淨度是 $重要的。大部分的場發射顯示器内部被抽直空,例如 秤f 10〜7 torr的低壓,如此可提供較長的電子&均自由路 path)以利於電子的行進,並且亦可防止 1 <次纟而的 >可染或劣化。It does not require the complicated and energy-consuming backlight of the LCD display (back 1 ight J and filter module. And almost all the light generated by the field emission display panel can be seen by the user. In addition, the tritium emission display does not A large thin-film transistor array is required, so the problems of high cost and low yield of liquid crystal monitors (a × ·, α ^ 1 1 V 6 matri X) can be avoided. The light-emitting principle of a field emission display is borrowed A cathode electrode emits electrons that impinge on the phosphor coated on the back of a transparent cover to produce cathode fluorescent light. This kind of light emitting method has extremely high luminous efficiency. Compared with the traditional cathode ray tube (CRT) Device, each pixel or emission unit of the field emission display panel has its own electron emission source, usually an emission microtips array. A control electrode and the cathode electrode are used. The potential difference between the two causes the electrons to be attracted and accelerates and impacts the phosphor coating. Because of the work function of the material of the sub-emission source (work f unc ti 〇n) It has a great influence on the emission, flow, and display brightness. Therefore, in order to make the field emission display = ^ to the required efficiency, the uniformity and cleanliness of the material of the electron emission source is important. Most field emission displays are internally Straight down, such as the low pressure of the scale f 10 ~ 7 torr, so it can provide a longer electron & free path) to facilitate the travel of the electron, and also prevent 1 < secondary > dyeable or Degradation.
做為ί ?的場發射顯示面板’是使用鉬金屬材質的微尖端 做為場發射陰極。直伯杏古 Μ貝J 化石夕厚,梦::兮:法疋先在1夕晶圓上形成-層厚氧 層然後在该虱化矽層上沉積一金屬閘層(gateAs a field emission display panel, the molybdenum metal tip is used as the field emission cathode. Zhibo Xinggu Mbe J Fossil Xihou, Dream :: Xi: First, a thick oxygen layer was formed on the wafer on the 1st of the night, and then a metal gate layer (gate
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494425 五、發明說明(3) 1 ayer)。接著將該金屬閘層圖案化,以開出適當的閘層 開口 ( ga t e 〇p e n i ng s)。然後#刻談氧化石夕層使得在該 閘層開口處形成一發射井(we 1 1)。接著沉積一犧牲材料 層,例如鎳金屬層,於該閘層上並避免使該鎳金屬層沉積 入該發射井内。再來將鉑金屬以正向入射方式進行沉積, 如此可在該發射井内沉積出一尖銳圓錐體直至該發射井上 之開口被封閉。將該鎳犧牲材料層除去後即可獲得圓錐狀 發射尖端。 另一種發射尖端的製造方法,是在一矽層上以熱氧化 法(thermal oxidation)形成一氧化層。將該氧化層圖 案化後,選擇性蝕刻該矽層而形成矽質的微尖端。接著再 次氧化以及蝕刻該矽質微尖端,則可使該微尖端更加尖 銳。 微尖端亦可製作於其它合適的基板上,例如玻璃基 板,玻璃基板是製做大型平面顯示面板的理想基板。而微 尖端的材質可以是金屬導體或摻雜過的(doped)半導體 材料。此種設計的場發射顯示器,在陰電極與發射尖端之 間形成一個具有特定電導係數的中間層是非常需要的。具 有適當的電阻率的中間層可以使場發射顯射器的運作更加 穩定。在製作上通常需沉積一非晶石夕層,該非晶石夕層的電 導係數可控制在介於本質非晶矽與高度摻雜的η型(η + ) 非晶矽的電導係數範圍之間。該非晶矽層的電導係數可藉 由調整其所含的磷原子的含量來加以控制。 一般而言,場發射元件需要被包容於一真空的空腔494425 V. Description of the invention (3) 1 ayer). The metal gate layer is then patterned to open appropriate gate openings (ga t e ope n i ng s). Then # 刻 谈 oxidized stone layer so that a silo (we 1 1) is formed at the gate opening. A layer of sacrificial material, such as a nickel metal layer, is then deposited on the gate layer to prevent the nickel metal layer from being deposited into the firing well. Then, the platinum metal is deposited in a forward incidence manner, so that a sharp cone can be deposited in the silo until the opening on the silo is closed. After removing the nickel sacrificial material layer, a conical emission tip can be obtained. Another manufacturing method of the emission tip is to form an oxide layer on a silicon layer by thermal oxidation. After patterning the oxide layer, the silicon layer is selectively etched to form silicon microtips. Then the silicon microtip is oxidized and etched again to make the microtip sharper. Microtips can also be fabricated on other suitable substrates, such as glass substrates, which are ideal substrates for making large flat display panels. The material of the microtip can be a metal conductor or a doped semiconductor material. For such a field emission display, it is very necessary to form an intermediate layer with a specific conductivity between the cathode electrode and the emission tip. An intermediate layer with proper resistivity can make the operation of the field emission display more stable. An amorphous stone layer is usually deposited during production, and the conductivity of the amorphous stone layer can be controlled between the range of the intrinsic coefficient of amorphous silicon and the conductivity of highly doped η-type (η +) amorphous silicon. . The conductivity of the amorphous silicon layer can be controlled by adjusting the content of phosphorus atoms contained in the amorphous silicon layer. Generally speaking, the field emission element needs to be contained in a vacuum cavity
494425 五、發明說明^ ' 〜---—--- 内,以避备义 空度通常中备射出的電子在行進時不被阻礙。該空腔的真 基:與i ΐ ί達到1。、? t〇rr的低壓。另外,為了使該坡璃 要利用間p盖板之間保持適當的間距而不致塌陷,通常需 間以做^=物(spacers)置於該玻璃基板與該上蓋板之 或長條形狀撐之用。該間隔物例如可為玻璃球體或十字型 豆面2「第1 A圖」為一種傳統的場發射元件,第丨C圖為 阻# 1 A =。一電阻層1 2沉積於一玻璃基板1 4上,該電 ϋί㊆為一非晶石夕層(_rph_ Slllc〇n)。由介 私/、\構成的一絕緣層16以及一金屬閘層(metallic 微尖端2 該電阻層12上,並形成有金屬之 電阻声]^ 極結構22則被該電阻層12所覆笔。該 包阻層1 2為呈右摘各兩β 皿 質如Sl〇二二二,,緣層16則為絕緣材 太大,-^制该非阳矽層12的電阻係數使其電阻不致 resWoVnr“夕層12具有限流電阻器(Umiting ( 的功用,以避免當該微尖端20與該金屬閘層 (^te layer) 18發生短路時的過電流。 閘層 該,士:種完整的場發射顯示器結構30如「第1B圖」所示, Λ、、、口構3 0之上部為一陽電極2 8 〇為了筒明4目 〆、 该陰電極層2 2表示前述之險带極:槿盥+ 圖中僅以 2〇用以H /丨、^ % π μ f包 電阻層。該微尖端 n 大鳊4¾射出電子26。該閘層18被供庫一 何,而該陽電極28則被供庫一 f古之下+ # ^494425 V. Description of the invention ^ '~ --- --- --- to avoid the meaning of vacancies Normally, the electrons emitted from the backup are not hindered during travel. The root of the cavity: reach 1 with i ΐ ί. ,? T〇rr low pressure. In addition, in order for the sloped glass to use an appropriate distance between the p-covers and not to collapse, it is usually necessary to make spacers placed on the glass substrate and the upper cover or a long-shaped support. Use. The spacer may be, for example, a glass sphere or a cross-shaped bean surface 2 (Figure 1A) is a conventional field emission element, and Figure 丨 C is a resistance # 1 A =. A resistance layer 12 is deposited on a glass substrate 14, and the electrode is an amorphous stone layer (_rph_Slllcon). An insulating layer 16 and a metal gate layer (metallic microtip 2 on the resistive layer 12 and a metal resistive sound are formed) ^ electrode structure 22 is covered by the resistive layer 12. The cladding layer 12 is a right-side pick-up of two beta substrates, such as S1022, and the edge layer 16 is too large. The resistivity of the non-anode silicon layer 12 makes the resistance not resWoVnr " The layer 12 has the function of a current limiting resistor (Umiting () to avoid overcurrent when the microtip 20 and the metal gate layer 18 are short-circuited. The gate layer should be a complete field emission The display structure 30 is as shown in "Fig. 1B". The upper part of Λ ,, and mouth structure 30 is an anode electrode 2 8. For the sake of clarity, the cathode electrode layer 22 represents the aforementioned danger zone electrode: hibiscus. + In the figure, only 20 is used to cover the resistive layer with H / 丨 and ^% π μ f. The microtip n is larger than 4¾ and emits electrons 26. The gate layer 18 is used for storage, and the anode electrode 28 is For library one ancient times + # ^
可由鍍有螢夯顆抑Μ的"更同之正兒何。該陽電極2 8 又有赏先顆拉32的一玻璃板36所構成。參考「篦1C 圖」所示,-IT〇( lnd_W"xi㈣透明導電層3二Can be plated with fluorescent particles to suppress M " more the same thing. The anode electrode 2 8 is further composed of a glass plate 36 which is a first pull 32. Refer to "篦 1C 图", -IT〇 (lnd_W " xi㈣Transparent conductive layer 32
五、發明說明(5) 用以更增進該螢 射顯示器僅約2 - 3 6之間抽真空, 38 (如「第1B圖 上述之微尖 很大的進步,位 形成許多不同的 薄膜沉積以及黃 發射顯示器的各 )暴製步驟,而 黃光蝕刻製程皆 為了降低生 子發射源材料的 來。其中一種二 示。該場發射顯 電極,並以微管 構的場發射顯示 4 4。該下玻璃板 該導電層4 6可為 一導電層46上, 500// m的一介電 氮化矽、氮氧化 材料層48圖案化 材料)印刷於該 光劑廣破該電子26轟擊時的亮度。該場發 4mm厚,該下破螭基板1 4與該上坡璃基板X 而週園則以側牆板(sidewall panels) 」中所示)密封。 ^ %毛射顯示為相較於液晶顯示器雖然有 其缺點在於製程仍過於複雜。例如,需要 膜層’尤其是要形成該微尖端需要運用到 光與#刻技術。為了定義與製造出此種場 部構造需要相當多的光罩(ph〇t〇masking 所須蓮用到的化學氣相沉積(CVD)以及 會大幅增加生產成本。 產成本’以微管(nano tube)材料做為電 二極或三極場發射顯示器因而被開發出 極結構的場發射.顯示器如「第2圖」所 示裔4 0在同一基板上形成有陰電極以及陽 笔子射體做為電子發射源。此種二極結 為40包括一下玻螭板42以及一上玻璃板 4 2上先以厚膜印刷技術形成一導電層4 6, 含有金屬顆粒的導電膠,如銀膠。在該第 以厚膜印刷技術形成厚度大約在5 〇 #爪至 材料層4 8。a亥;|電材料層可由二氧化石夕、 石夕或其它合適的介電材料組成。將該介電 後,將一導電銀膠50 (或其它合適的導電 介電材料層4 8上。該導電銀膠5 〇的厚度可 五、發明說明(6) I大约在5/Z nj至 可以厚膜印 1 m的範圍。然後在該導電銀膠5 0上同樣 層5 2。如此刷技術形成厚度約在5// m至m—微管發射 stacks) 6〇元成多數個電子發射堆(electr〇n em^tter 穿出直立於諸由圖中可見碳微管(carb〇n nan〇_tubes) 54 厚膜印刷技I祕貫舍射層5 2的表面。在該導電層4 6上亦以 的光,例如2形成=螢光粉被覆層5 6用以發射不同的色彩 )被充以負士監光、綠光。當陰極(即該導電銀膠5 0 該上玻璃板$何時,該微管發射層52即發射出電子58。在 62產生排斥力:,f可形成有一第二陰極62用以對該電子 行進,1中兮=”朝向陽電極層(即該螢光粉被覆層56) 有的電二陰極62的材料例如為ιτο。理想上,所 斥而朝該陽;;=該S極:6吸引而被該第二陰極62排 碳微管54所發射出來的電由::微官發射層52頂面的 射,反而是朝向相鄰心=去有些並非朝向該陽電極發 而使得該相鄰的相素在我們^ ^電極(未繪示)。因 成場發射顯示器在色彩产晰译主的情況下被點亮,而造 射顯示p在色奢及#象i又的不良影響。為了減少場發 ^ , 心及衫象清晰度上的損失,對於哕料总於 “ 5 2頂面的碳微管g 4所發ψ + g务射 須加以改進。 X射出來的電子58之散射問題則必 【發明之目的及概述】 發射ΐ此=發明的目的在於提供-種新的二極結構之π ;ρ :面板’以解決上述之電子散射問題。 用 根據上述目的,太恭ag k ^月的二極結構之場發射顯示面 五 板 電極 電材 成。 管發 的方 發明說明 陰電拯以万 —餡思及陽 &層陰哈丄 料層以及:电極 該雔岛 失於該 又層陰|故 射層所ϋ ϋ之 C,且 π朝向垓下 本發明的另一、 顯示面板的製:: 該方法將雙;: 璃板上,而兮Μ層陰 邊雙層降 I成弟一導電 A 發射層,然後對使其向下“覆蓋; ,而一第二導+ k v電膠 〇 根據本發明的 一基板上具有一 一陽電極。該場 一絕緣材料級成 緣板上’該複數個電 定之相等距離相間隔 向,該電子發射堆依 其頂面及側壁被覆有 成於該微管發射層頂 為 電極皆形成於下玻璃板上。其中該陰 (d u a 1 - 1 a y e r c a t: l·) 〇 d e ),由兩層導 兩導電材料層之間的微管發射層所構 一,下層導電材料層之週圍並被該微 牙出該微管發射層的碳微管皆以偏下 板。 的在於提供一種新的二極結構之場發 法。 笔極以及陽電極形成於相同之一下玻 電極的做法,首先在一介電材料層上 八、'、後在5亥弟一導電膠層上形成^一微管 官發射層施以一硬化(cure)步驟, 卓 電膠層之周圍並硬化(cure 層則被形成並覆蓋在該微管發射層頂 在同 以及 第 種場發 雙層陰 發射顯 ;複數 子發射 ,且每 序包括 射顯示面板的較佳實施例,係 笔極(dual-layer cathode) 示面板包括,一第一絕緣板由 個電子發射堆形成於該第一絕 堆彼此在一縱向上大致以一預 一該發射堆皆平行於一橫向方 一介電材料層,一第一導電層 微管發射層 以及一第二導電層形 面’其中該第一導電層及該第二導電V. Description of the invention (5) It is used to further increase the vacuum of the fluorescent display only between about 2-36, 38 (for example, "Fig. 1B, the microtip is greatly improved, and many different thin film deposits are formed. Each step of the yellow-emitting display is a step of ablation, and the yellow-light etching process is to reduce the source material of the biological emission source. One of them is shown in the second. The field emission display electrode and the field emission display of the microtubule structure show 4 4. The conductive layer 46 of the glass plate may be a conductive layer 46, a 500 // m layer of a dielectric silicon nitride, an oxynitride material layer 48 (patterned material), printed on the light agent, and the brightness when the electron 26 is bombarded. The field is 4mm thick, the lower broken substrate 14 and the uphill glass substrate X are sealed by Zhou Yuan with sidewall panels. ^% Hair emission display is compared with LCD, although it has the disadvantage that the manufacturing process is still too complicated. For example, the need for a film layer 'and, in particular, the formation of the microtip requires the use of light and engraving techniques. In order to define and manufacture such a field structure, a considerable number of photomasks (chemical vapor deposition (CVD) used in photomasking and sclerosis) and a significant increase in production costs are required. Production costs are based on microtubes (nano The tube material is used as an electric dipole or tripolar field emission display, so field emission of a polar structure has been developed. The display is shown in "Figure 2" and a female electrode and a male pen emitter are formed on the same substrate. As an electron emission source, this type of bipolar junction 40 includes a lower glass plate 42 and an upper glass plate 42. A conductive layer 46 is formed by a thick film printing technique. A conductive paste containing metal particles, such as silver paste The thick film printing technique is used to form a thickness of about 50 ° between the claw and the material layer 48. The electrical material layer may be composed of stone dioxide, stone evening or other suitable dielectric materials. After electrification, a conductive silver paste 50 (or other suitable conductive dielectric material layer 48) is applied. The thickness of the conductive silver paste 50 may be 5. Description of the invention (6) I is about 5 / Z nj to a thick film Print a range of 1 m. Then the same layer 5 2 on the conductive silver glue 50. So The technology forms a thickness of about 5 // m to m—microtube emission stacks) 60 yuan into a number of electron emission stacks (electrón em ^ tter pierced out of the carbon microtubes visible in the figure (carbon nan) 〇_tubes) 54 Thick film printing technique I The surface of the irradiated layer 5 2. The light that is also used on the conductive layer 46, for example, 2 is formed = phosphor coating layer 5 6 to emit different colors) It is charged with negative light and green light. When the cathode (that is, the conductive silver glue 50 and the upper glass plate $), the microtube emission layer 52 emits electrons 58. Repulsive force is generated at 62 :, f can form A second cathode 62 is used to travel the electrons, and 1 == toward the anode electrode layer (that is, the phosphor coating layer 56). The material of the electric second cathode 62 is, for example, ιτο. Ideally, The yang;; = the S pole: 6 attracts and is emitted by the second cathode 62 row of carbon microtubes 54 by: the emission of the top surface of the micro-guan emission layer 52, but toward the adjacent center = to some It is not directed towards the anode electrode, so that the adjacent phase element is spotted at our electrode (not shown). The field emission display is spotted in the case of color rendering. The radiograph shows the negative effects of p in color luxury and # 象 i. In order to reduce the loss of field clarity, heart and shirt image clarity, the carbon microtubes g 4 which are always on the top surface of "5 2 The emission of ψ + g must be improved. The scattering problem of the electrons 58 emitted by X must be [the purpose and overview of the invention] emission = this = the purpose of the invention is to provide-a new type of diode structure π; ρ: The panel is used to solve the above-mentioned electron scattering problem. The field emission display surface of the five-plate electrode is made of a two-pole structure according to the above purpose. The invention of Guan Fa's invention explains that Yindian Zhengyi—filling with yang & layers of yin and yin, and materials: and the electrode, the island is lost to this layer of yin | so the C of the ϋ, and π direction The following is another method for producing a display panel of the present invention: This method doubles: a glass plate, and the negative layer of the M layer and the double-layered layer are reduced to a conductive A emitting layer, and then “covered” downward. And a second conductive + kv electric glue. There is a positive electrode on a substrate according to the present invention. The field is an insulating material-grade edge board. The plurality of electrically set equal distances are opposite to each other, the electron emission stack. The top surface and the side wall are covered with electrodes formed on the lower glass plate on the top of the microtube emission layer. The cathode (dua 1-1 ayercat: l ·) 〇) is made of two conductive materials. The micro-tube emission layer between the layers is constructed, and the carbon micro-tubes surrounding the lower conductive material layer and the micro-tube emission layer by the micro-tooth are all under the plate. The purpose is to provide a new field structure of a bipolar structure. The method of forming the pen electrode and the anode electrode on the same lower glass electrode, first A dielectric material layer is formed on the conductive adhesive layer, and then a microtubule emitting layer is applied to a curing step, and the adhesive layer is hardened around the curing layer (the cure layer is Form and cover the microtube emission layer on top of the same and the first field to send a double-layer cathode emission display; multiple sub-emissions, and each sequence includes a preferred embodiment of an emission display panel, a dual-layer cathode display The panel includes a first insulating plate formed by an electron emission stack on the first insulation stack, and each of the first insulation stacks is generally parallel to a lateral direction, a dielectric material layer, and a first conductive layer in a longitudinal direction. Microtube emission layer and a second conductive layer shaped surface, wherein the first conductive layer and the second conductive layer
494425 五、發明說明(8) 層係為長條形狀;複數個導電帶形成於該複數個電子發射 堆之間隙而被該介電材料層彼此分隔開’該導電帶大體上 為透明之材料’該複數個導電帶上並被覆有複數個營光被 覆帶,該螢光被覆帶當被該微管發射層所發出之電子激發 時可發出紅光、綠光或藍光;一第二絕緣板置於該第一絕 緣板之上並與該第一絕緣板相隔一間距;以及複數個側牆 板與該第一絕緣板以及該第二絕緣板之週圍相接合使該第 一絕緣板以及該第二絕緣板之間形成一密閉空間。 在上述之場射顯示面板中,在該導電帶與該第一絕緣 板之間更可包括一反射層,該反射層可為金屬材質。該第 一絕緣板以及該第二絕緣板可由大體上為透明之材料所構 成。該第一導電層為該場發射顯示面板之陰電極,而該第 一導電層以及該第二導電層可由含有金屬顆粒之導電膠所 構成。該導電帶為該場發射顯示.面板之陽電極,該導電帶 可由銦錫氧(indiim-tin - oxide; ITO)所組成。該微管 發射層可由微米尺度之空心管與一黏結劑所組成。該微米 尺度之空心管可由碳(carbon)纖維、鑽石(diamoird) 纖維或類鑽碳(d i a m ο n d - 1 i k e c a r b ο η)纖維混合而成, 而該黏結劑可由高分子材質組成。每一該螢光被覆帶被該 電子發射堆所發射出的電子激發後可發出紅光、綠光或藍 光,而相鄰的該螢光被覆帶係發出不同顏色的光。該介電 材料層的厚度則在約5 // m至約5 0 0 // m之間。 根據本發明的一種在同一基板上具有一雙層陰電極 (dual-layer cathode)以及一陽電極的場發射顯示面板494425 V. Description of the invention (8) The layer system has a long shape; a plurality of conductive strips are formed in the gaps of the plurality of electron emission stacks and are separated from each other by the dielectric material layer. The conductive strip is substantially transparent material 'The plurality of conductive tapes are covered with a plurality of camping light coating tapes, and the fluorescent coating tapes can emit red, green, or blue light when excited by the electrons emitted from the microtube emission layer; a second insulating plate Placed on the first insulation plate and spaced apart from the first insulation plate; and a plurality of side wall plates are joined to the periphery of the first insulation plate and the second insulation plate so that the first insulation plate and the A closed space is formed between the second insulating plates. In the field emission display panel described above, a reflective layer may be further included between the conductive tape and the first insulating plate, and the reflective layer may be made of metal. The first insulating plate and the second insulating plate may be composed of a substantially transparent material. The first conductive layer is a cathode electrode of the field emission display panel, and the first conductive layer and the second conductive layer may be formed of a conductive paste containing metal particles. The conductive strip is the field emission display. The anode electrode of the panel, the conductive strip may be composed of indiim-tin-oxide (ITO). The microtube emitting layer may be composed of a micrometer-sized hollow tube and an adhesive. The micron-sized hollow tube may be made of carbon fiber, diamond (diamoird) fiber or diamond-like carbon (d i a m ο n d-1 i k e c a r b ο η) fiber, and the adhesive may be composed of a polymer material. Each of the fluorescent covering tapes can emit red, green, or blue light after being excited by the electrons emitted from the electron emission stack, and the adjacent fluorescent covering tapes emit light of different colors. The thickness of the dielectric material layer is between about 5 // m and about 5 0 0 // m. A field emission display panel having a dual-layer cathode and a positive electrode on the same substrate according to the present invention
494425 五、發明說明(9) 之製造方法,包括下列步驟,提供一第一絕緣板;在該第 一絕緣板上形成複數個導電帶,該導電帶大體為透明;利 用厚膜印刷技術在該第一絕緣板上形成一介電層,該介電 層為平行該第一絕緣板一橫向方向的複數個長條;在該介 電層上形成長條狀之一第一導電層;在長條狀之該第一導 電層上形成一微管發射層;使該微管發射層向下流而覆蓋 長條狀之該第一導電層之侧壁並硬化(cure);在該微管 發射層頂面形成一第二導電層;形成複數個螢光被覆帶被 覆於該複數個導電帶上,每一該螢光被覆帶當被該微管發 射層所發出之電子激發時可發出紅光、綠光或藍光;將一 第二絕緣板置於該第一絕緣板之上並與該第一絕緣板相隔 一間距;以及利用複數個側牆板與該第一絕緣板以及該第 二絕緣板之週圍相接合使該第一絕緣板以及該第二絕緣板 之間形成一密閉空間。 上述方法中,該第一絕緣板以及該第二絕緣板層可為 大體上透明之絕緣材料板。該弟一導電層以及該弟二導電 層可由含有金屬顆粒之導電膠所構成。而形成該微管發射 層的步驟,可為將微米尺度之空心管與一黏結劑之混合物 以印刷方式形成於該第一導電層上,其中該微米尺度之空 心管可選自於由碳纖維、鑽石纖維或類鑽碳纖維所組成之 族群中的任何一種。上述方法可更包括連接一負電荷至該 第一導電層以及該第二導電層的步驟,以及連接一正電荷 至該導電帶的步驟。在形成該複數個導電帶的步驟中’該 導電帶的材質可為ITO。上述方法中,更可包括在該第二494425 5. The manufacturing method of invention description (9), including the following steps, providing a first insulating plate; forming a plurality of conductive tapes on the first insulating plate, the conductive tapes are generally transparent; A dielectric layer is formed on the first insulating plate, and the dielectric layer is a plurality of strips parallel to a lateral direction of the first insulating plate; a strip-shaped first conductive layer is formed on the dielectric layer; A microtube emission layer is formed on the strip-shaped first conductive layer; the microtube emission layer is caused to flow downward to cover the side wall of the long strip-shaped first conductive layer and is cured; and the microtube emission layer is cured. A second conductive layer is formed on the top surface; a plurality of fluorescent coating tapes are formed on the plurality of conductive tapes, and each of the fluorescent coating tapes can emit red light when excited by the electrons emitted from the microtube emission layer, Green light or blue light; placing a second insulating plate on the first insulating plate and being spaced apart from the first insulating plate; and using a plurality of side wall plates with the first insulating plate and the second insulating plate The first insulation plate and the first insulation plate A closed space is formed between the two insulation plates. In the above method, the first insulating plate and the second insulating plate layer may be substantially transparent insulating material plates. The first conductive layer and the second conductive layer may be composed of a conductive paste containing metal particles. The step of forming the microtube emission layer may be forming a mixture of a micron-sized hollow tube and an adhesive on the first conductive layer by printing, wherein the micron-sized hollow tube may be selected from carbon fiber, Any of a group of diamond fibers or diamond-like carbon fibers. The above method may further include a step of connecting a negative charge to the first conductive layer and the second conductive layer, and a step of connecting a positive charge to the conductive tape. In the step of forming the plurality of conductive tapes, the material of the conductive tape may be ITO. The above method may further be included in the second
第12頁 494425 五、發明說明(ίο) 絕緣板面向該第一絕緣板的那一面上被覆上一透明電極 層,並將一負電荷與該透明電極層相連接的步驟。上述方 法中該螢光被覆帶可由厚膜印刷技術形成。 為使對上述本發明的特徵,以及本發明的其它特徵與 優點有更清楚的暸解,接下來將配合圖示加以詳細說明。 但必須先說明的是,本發明除了下述之實施例外,仍然可 以有其它的實施例,且以下之圖示並不一定完全依實際比 例繪製。 【實施例詳細說明】 根據本發明所揭露的一種二極結構場發射顯示面板具 有一雙層陰電極以及一陽電極形成於一玻璃底板上。該場 發射面板,具有複數個電子發射堆。每一該電子發射堆係 由一介電材料層,一第一導電層,一微管發射層以及一第 二導電層依序堆疊而成。其中該微管發射層並被覆於該第 一導電層之側壁,而該第二導電層則形成於該微管發射層 頂面。該第一導電層及該第二導電層可由如導電膠等之導 電材料所組成’較佳來說該第一導電層及該第二導電層被 成形為長條形狀。該微管發射層的形成方式是先在該第一 導電層頂面形成一微管發射層材料,然後施以一硬化 (cure)步驟,使該微管發射層材料向下流而同時在該第 一導電層側壁形成微管被覆層。該第二導電層則將留存在 該第一導電層頂部的該微管發射層材料覆蓋住,如此而使 在該第一導電層頂面的微管發射層無法發射出電子。 在該微管發射層的硬化步驟之後,被覆於該第一導電Page 12 494425 V. Description of the invention (ίο) The side of the insulating plate facing the first insulating plate is covered with a transparent electrode layer and a negative charge is connected to the transparent electrode layer. In the method described above, the fluorescent coating tape can be formed by a thick film printing technique. In order to have a clearer understanding of the features of the present invention described above, as well as other features and advantages of the present invention, it will be described in detail with reference to the drawings. But it must be explained first that the present invention may have other embodiments except for the following implementation exceptions, and the following illustrations are not necessarily drawn according to actual proportions. [Detailed description of the embodiment] A field emission display panel with a bipolar structure disclosed in the present invention has a double-layered cathode electrode and a positive electrode formed on a glass substrate. The field emission panel has a plurality of electron emission stacks. Each of the electron emission stacks is formed by sequentially stacking a dielectric material layer, a first conductive layer, a microtube emission layer, and a second conductive layer. The micro-tube emission layer is covered on the side wall of the first conductive layer, and the second conductive layer is formed on the top surface of the micro-tube emission layer. The first conductive layer and the second conductive layer may be composed of a conductive material such as a conductive adhesive. Preferably, the first conductive layer and the second conductive layer are formed into a long shape. The micro-tube emission layer is formed by first forming a micro-tube emission layer material on the top surface of the first conductive layer, and then applying a cure step to make the micro-tube emission layer material flow down while at the same time in the first A micro-tube coating layer is formed on a conductive layer sidewall. The second conductive layer covers the microtube emission layer material remaining on top of the first conductive layer, so that the microtube emission layer on the top surface of the first conductive layer cannot emit electrons. After the hardening step of the microtube emission layer, the first conductive layer is covered
第13頁 494425 ----- 五、發明說明 層側壁表 陽電極。 朝向該陽 在本 厚膜印刷 膠電極層 側面面積 射層,再 I膠電極 膠電極層 電銀膠電 電銀膠電 本發 陰電極頂 管密度, 場發射顯 第 該結 及—上破 電材料層 Paste) 黏結劑混 條之介電 數個螢光 的雙層陰電極8 2的Page 13 494425 ----- V. Description of the invention The side wall surface anode electrode. Towards the anode, the layer is shot on the side area of the thick-film printed glue electrode layer, and then the glue electrode glue electrode layer is made of electric silver glue, electric silver glue, and cathode electrode tube density. Layer Paste) Adhesive mixed strip dielectric several fluorescent double-layer cathode electrode 8 2
第〗4頁 (11) 面的微管皆以偏下的方向指向該玻璃底板上的該 藉由此種新結構可由該微管發射層所發出的電子 電極,而避免朝相鄰的相素散射。 發明的裝置與方法中,電子發射源結構可以利用 技術來形成。例如,先形成厚度較厚的一第一銀 (厚度約1 0/Z m至5 0// m之間),使其具有較大的 。然後在該第一銀膠電極層頂面印刷上一微管發 H:硬化步驟使該微管發射層向下流至該第- 二I二ί'成硬化。然後將厚度較小的一第二銀 形成亥试管發射層頂冑,覆蓋住留存在第一導 極層頂面的該微管發射 住邊存在弟* 極層頂面的該微管發射吏在以弟ν 明之新結構具有許多出電子: 面朝上發射的電子,(匕括·( 1)消除了 ⑺將電子限制在朝胃電心:=側表面之微 示面板的色彩清晰度與對比声。向發射,(4 )改善 3圖」繪示本發明的一種場發" 構為一種二極結構之設計,星#纟、員不面板結構 璃板7 4。在該下玻璃板7 2之二有—下玻璃板7 2以 76。該導電材料層76可由導二^表面形成有一導 ,例如銀膠所組成。該娘膜口兒膠(conductive 合而成。’然後在該導電粉與—高分子 材料層7 8,並在該介兩 9 6上形成複數個長 被覆帶(陽電極)8 n。 9〖8長條之間形成複 υ υ 本發明的絲ρ 五、發明說明(12) --- ----- 做法疋=在4介電材料層7 8上以厚膜印刷技術形成厚度較 厚的'一第一 ^ 、酋^兒$電膠層8 4,然後將一微管發射層8 6印刷 在°亥第 ^包導電膠層84頂面,再將一第二導電膠層88印 刷於該微營私θ ^吕心射層8 6頂面。該上玻璃板74面向該下玻璃板 72的一面表面上,可有選擇性地形成ITO材質的一透明電 極層9 0做為第二個陰電極,當然亦可以不要有該透明電極 層9 0 〇 根據本發明,接下來的步驟則是利用介於約4 0 0°C至 約5 0 0°C之間的溫度以及大約丨5分鐘至6 〇分鐘的時間(較 4土日守間為3 0分鐘)施以一硬化製程(c u r i n g p r 〇 c e s s)。. 該第一導電膠層84的寬度可介於約5〇/z m至i50// m之間, 而鬲度可介於約1 〇 V m至5 Ο # m之間。該微管發射層8 6的厚 度可介於約5// m至1 〇" m之間,而寬度可介於約i 〇 〇// m至 、力3 0 0/z m之間。而該第二導電膠層8 8的高度可為約5〜1 〇 v m,明顯地小於該第一導電膠層84的高度。為了使該下玻 离板7 2以及该上玻璃板7 4之間容易於抽真空,該下玻璃板 7 2以及違上玻璃板7 4之間的距離約為1 · 1 m m。在該硬化製 程後,由於該微管發射層8 6中所含的高分子黏結劑 Y binder)本身的特性使然,該微管發射層86向下流動而 形成如「第4圖」中之結構。該微管1 〇 〇曝露並覆蓋於該長 φ f狀第一導電膠層84之侧壁表面。因為該微管丨在硬化 製程中皆被朝向一向下的方向,所以該微管1 〇 〇所發射出 的電子98皆朝向該陽電極80。當該上玻璃板74之該IT〇透 明電極層9 0被充以一負電荷時,亦會對該電子9 8產生排斥The microtubes on page (11) on page 4 are directed downward on the glass bottom plate. The electronic electrodes that can be emitted by the microtube emission layer through this new structure, and avoid facing the neighboring elements. scattering. In the device and method of the invention, the electron emission source structure can be formed using technology. For example, a first silver (thickness between about 10 / Z m and 50 // m) having a thicker thickness is formed first so that it has a larger thickness. Then, a microtubule hair is printed on the top surface of the first silver gel electrode layer. H: The hardening step causes the microtubule emission layer to flow down to the second-second-stage hardening. Then, a second silver with a smaller thickness is formed into the top of the test tube emission layer, and the micro tube that covers the top surface of the first conductive layer is emitted. Yi Di ν Ming Zhi's new structure has many electrons: The electrons that are emitted face up, (1) Eliminates the limitation of electrons to the stomach electrocardiogram: = the color clarity and contrast of the micro display panel on the side surface Acoustic. Directional emission, (4) Improving 3 pictures "shows a field emission of the present invention " designed as a two-pole structure, star # 纟, 不 not panel structure glass plate 7 4. Under the glass plate 7 2 bis is-the lower glass plate 72 is 76. The conductive material layer 76 may be formed by a conductive surface, such as silver glue. The film is formed by conductive adhesive. Powder and polymer material layer 7 8 and a plurality of long covering tapes (positive electrodes) 8 n are formed on the substrate 9 9. 9 〖8 complexes are formed between 8 long strips υ silk of the invention ρ 5. Invention Explanation (12) --- ----- Practice 疋 = thicker film forming technology on 4 dielectric material layers 7 8 '一 第一 ^ , 酋 ^ $ 电 胶层 8 4, and then a microtube emitting layer 86 was printed on the top surface of the conductive adhesive layer 84, and then a second conductive adhesive layer 88 was printed on The top surface of the micro-injection layer θ is at the top of the surface. The upper glass plate 74 faces a surface of the lower glass plate 72, and a transparent electrode layer 90 made of ITO can be selectively formed as the second surface. A negative electrode, of course, the transparent electrode layer 90 is not required. According to the present invention, the next step is to use a temperature between about 400 ° C to about 500 ° C and about 5 A period of 30 minutes to 30 minutes (compared with 30 minutes from 4 days) is subjected to a curing process. The width of the first conductive adhesive layer 84 may be between about 50 / zm to i50 / and m can be between about 10 volt m and 50 μm. The thickness of the micro-tube emission layer 86 can be between about 5 m / m and 10 m. The width may be between about 100 / m to about 300 / zm. The height of the second conductive adhesive layer 88 may be about 5 to 10 vm, which is significantly smaller than that of the first conductive layer. The height of the adhesive layer 84. To The lower glass separation plate 72 and the upper glass plate 74 are easily evacuated, and the distance between the lower glass plate 72 and the violated glass plate 74 is about 1.1 mm. After the hardening process, Due to the characteristics of the polymer binder (Y binder) contained in the microtube emission layer 86, the microtube emission layer 86 flows downward to form a structure as shown in "Figure 4." The microtube 1 〇〇 Exposed and covered the sidewall surface of the long φ f-shaped first conductive adhesive layer 84. Because the microtubes are all directed in a downward direction during the hardening process, the electrons 98 emitted by the microtubes 1000 are all directed toward the anode electrode 80. When the IT0 transparent electrode layer 90 of the upper glass plate 74 is charged with a negative charge, the electron 98 will also be repelled.
第15頁 494425 五、發明說明(13) 力而使該電子9 8向下朝向該陽電極8 0行進。而該第二導電 膠層8 8覆蓋住該第一導電膠層8 4頂面所留存的微管發射 層,而阻止該微管朝上發射電子。 本發明之場發射顯示面板的新結構,增加了陰極側壁 表面的微管密度,消除向上發射的電子,並使被發射出的 電子被限制在朝向該陽電極的方向,因而可改善場發射顯 示面板的清晰度與對比度。 以上所述者,僅為本發明其中的較佳實施例而已,並 非用來限定本發明的實施範圍,熟習該項技術者在不脫離 本發明之精神下當可做適當之修改與潤飾;故凡依本發明 申請專利範圍所作的均等變化與修飾,皆為本發明專利範 圍所涵蓋。Page 15 494425 V. Description of the invention (13) Force the electron 98 to travel down toward the anode electrode 80. The second conductive adhesive layer 88 covers the microtube emission layer remaining on the top surface of the first conductive adhesive layer 84, and prevents the microtube from emitting electrons upward. The new structure of the field emission display panel of the present invention increases the density of the microtubes on the surface of the cathode sidewall, eliminates upwardly emitted electrons, and limits the emitted electrons to the direction of the anode electrode, thereby improving the field emission display The clarity and contrast of the panel. The above are only the preferred embodiments of the present invention and are not intended to limit the scope of implementation of the present invention. Those skilled in the art can make appropriate modifications and retouching without departing from the spirit of the present invention; All equal changes and modifications made according to the scope of patent application of the present invention are covered by the scope of patent of the present invention.
第16頁 494425 圖式簡單說明 第1 A圖,一種傳統的場發射顯示元件的放大剖面圖,使用 微尖端做為電子發射源。 第1 B圖,為「第1 A圖」所示之場發射顯示元件加上一陽電 極以及側牆板形成一封閉空間。 第1 C圖,為「第1 B圖」之部分放大剖面圖,顯示單一之微 尖端結構。 第2圖,一種傳統的場發射顯示器的放大剖面圖,使用微 管發射層做為電子發射源。 第3圖,為本發明之二極結構場發射顯示器之放大剖面 圖,在同一玻璃底板上形成有一雙層陰電極以及 一陽電極。 第4圖,為「第3圖」所示之本發明的場發射顯示器結構在 該微管發射層經過硬化過程後之結構。 【圖式符號說明】 10 場發射元件 12 電阻層 14 下玻璃基板 16 絕緣層 18 金屬閘層 20 微尖端 22 陰電極 26 電子 28 陽電極 30 場發射顯示器結構Page 16 494425 Brief Description of Drawings Figure 1A, an enlarged sectional view of a conventional field emission display element, using a microtip as an electron emission source. Fig. 1B shows the field emission display element shown in "Fig. 1A" plus a positive electrode and a side wall plate to form a closed space. Figure 1C is a partially enlarged sectional view of "Figure 1B", showing a single microtip structure. Fig. 2 is an enlarged cross-sectional view of a conventional field emission display using a micro tube emission layer as an electron emission source. Fig. 3 is an enlarged cross-sectional view of a bipolar structure field emission display of the present invention. A double-layered cathode electrode and an anode electrode are formed on the same glass substrate. Fig. 4 shows the structure of the field emission display structure of the present invention shown in "Fig. 3" after the microtube emission layer has undergone a hardening process. [Illustration of Symbols] 10 Field emission element 12 Resistive layer 14 Lower glass substrate 16 Insulation layer 18 Metal gate layer 20 Microtip 22 Female electrode 26 Electron 28 Male electrode 30 Field emission display structure
第17頁 494425 圖式簡單說明 32 螢 光 顆 粒 34 透 明 導 電 層 36 上 玻 璃 板 38 側 牆 板 40 場 發 射 顯 示 器 42 下 玻 璃 板 44 上 玻 璃 板 46 導 電 層 48 介 電 材 料 層 50 導 電 銀 膠 52 微 管 發 射 層 54 碳 微 管 56 螢 光 粉 被 覆 層 58 電 子 60 電 子 發 射 堆 62 第 二 陰 極 70 場 發 射 顯 示 面板結構 72 下 玻 璃 板 74 上 玻 璃 板 76 導 電 材 料 層 78 介 電 材 料 層 80 螢 光 被 覆 帶 82 雙 層 陰 電 極 84 第 一 導 電 膠 層Page 17 494425 Brief description of the diagram 32 Fluorescent particles 34 Transparent conductive layer 36 Upper glass plate 38 Side wall plate 40 Field emission display 42 Lower glass plate 44 Upper glass plate 46 Conductive layer 48 Dielectric material layer 50 Conductive silver glue 52 Micro Tube emission layer 54 Carbon micro tube 56 Phosphor coating layer 58 Electron 60 Electron emission stack 62 Second cathode 70 Field emission display panel structure 72 Lower glass plate 74 Upper glass plate 76 Conductive material layer 78 Dielectric material layer 80 Fluorescent coating With 82 double-layer negative electrode 84 first conductive adhesive layer
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