TW491967B - Mask combination and method of use - Google Patents

Abstract

The present invention discloses a mask combination and method of use, the mask combination comprises a packed mask and its unpacked mask, wherein the packed mask at least comprises the required feature and the assist feature, the unpacked mask at least comprises the unpacked feature, the positions of unpacked feature are all corresponding to either one of the required pattern or assist feature on the packed mask. During the process of exposing step, the spatial frequency of the feature distribution is added by the assist feature disposed on the packed mask, and the uniformity of the exposure level of the whole mask is enhanced, so as to increase the depth of focus of the pattern required, and shield the assist pattern formed by the unpacked mask, and preserve the required pattern finally.

Description

491967 A7 B7 V. Description of the Invention () Field of the Invention: The present invention relates to a photomask combination and its application, and particularly to a combination of a packed mask and an unpacked mask, and The method of constructing a photomask and releasing the photomask is used for pattern printing. Background of the Invention: In the integrated circuit industry, the photo lithography technology is used to transfer the pattern of the circuit layout on the photomask to a semiconductor wafer, and it is the only and effective semiconductor pattern transfer technology currently known. Therefore, the lithography technology is an indispensable and important technology in the semiconductor manufacturing process. With the rapid development of electronic technology, the size of electronic components has gradually reduced, and the minimum line width (Critical Dimension; CD) of component sizes has also become smaller. Therefore, in the fabrication technology of electronic components, the development of nanometer exposure technology and imaging technology of the lithography process has a significant impact. At present, the resolution and depth of focus (DOF) of pattern transfer are the main indicators for evaluating lithography technology. The higher the resolution and the greater the depth of focus, the higher the quality of pattern transfer. With the increase in component accumulation and the reduction in line width, the requirements for the resolution of the lithography process have become higher and higher. In order to improve the paper size of the optical exposure system, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applicable (please read the precautions on the back before filling out this page), u «ϋ n ϋ ϋ n H-4 ϋ nn line! Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 491967 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () Analyze the edge force 'and take into account the depth of focus without changing the exposure light source and the original process conditions' Off-axis illumination (〇ff_Axis IUuniinati〇n; 〇AI) technology can be used to improve the resolution by changing the incident angle of the exposure light source. When using off-axis illumination for pattern exposure, the off-axis illumination has circular (Annular), quadruple, and two-hole (Dip〇i) configurations. Therefore, in the circle, Pei, four-hole, and two-hole Where it can only be improved for a specific spatial frequency of the target, and its improvement effect is dependent on the pattern direction. For example, when the ratio of line width to distance between lines is 1: 1, the image quality of the line pattern Can you get better? Wen Shan, * #, the line width and the distance between the lines is 1: 2 or the distance between the lines is larger, the improvement effect of the image quality of the line pattern is not significant #, especially the separate line pattern At present, in order to improve the image quality of pattern features with a large distance between lines, if space permits, add a sub-resolution line pattern between the pattern features to increase the tightness of the spatial frequency, such as The resolution of the high-line pattern and the depth of focus are deepened to achieve the purpose of improving the image quality of the image ^ acupoints, as disclosed in US Patent No. 5242770 and US Patent No. 5 82 1 014. Among them, the above-mentioned additions Secondary resolution line pattern 4 Because the width is smaller than the resolution of the optical exposure system, 'g will not be printed on the wafer'. However, the improvement of these sub-resolution line patterns is limited, and as the line width size becomes smaller, these Sub-resolution line pattern This paper's dimensions apply to Chinese National Standard (CNS) A4 (210 X 297 male double) c Please read the precautions on the back before filling this page) nnn HI ϋ ii. , Ϋ n n ϋ n n n I n <,________; ___ Γ 491967 Ministry of Economic Affairs, Intellectual Property, Property Bureau Λ7 V. Description of the invention () The difficulty in production also increased. In addition, if it is impossible to control the size accurately when making this analysis, these sub-analysis line patterns will still be printed. ', The purpose and summary of the invention: In view of the above-mentioned conventional printing pattern of the mask pattern, the image development quality and depth of focus of the pattern can not reach the current process requirements, and the effect of the secondary analysis pattern can be improved to increase the spatial frequency of the pattern Finite and sub-analytic graphs

When the case is planted, it is easy to make and difficult to control its size accurately, and it is difficult to increase the length. 3 I Therefore, one of the main objects of the present invention is to provide a photomask combination, which is composed of a photomask and a photomask release. From :, constructing the photomask includes at least the required features and the Assist Feature beside the required features, and the size of the auxiliary features is not to a degree, so the added auxiliary features cannot be exposed. It can increase the frequency of pattern distribution and the uniformity of the exposure level of the entire mask. Second, the depth of focus and resolution of the space plan. In addition, the dream 71 and the first mask are easy to make. Another object of the present invention is to provide a light. The hood assembly includes constructing a photomask and a release photomask, in which a photo ^ 2 photomask combination feature and auxiliary features are installed, and the photomask release includes at least the required eve including a plurality of release features (please read the note on the back first) Please fill in this page for matters) Order --------- line! Printed by the Consumer News Agency This paper is sized to the Chinese National Standard (CNS) A4 (210: 297 mm) n n ϋ n I · n n < Λ7

The position of the “Release Special Feature” shall correspond to the characteristics of the light green & help line feature, the two-line feature or the Fengxiang choice of the photomask, and the required feature of the release feature. $ Gi A Dingli is slightly larger than its reference M or auxiliary line characteristics. Because using F # g light can get better silly. It is necessary to use a structure to mask first to exhaust the required pattern, so t ”mask can be selectively waited for t long yield can be improved. Another aspect of the present invention is to provide an application mask combination,隹 一 ㈤ & Printing method, Fuzhongbu, σ enter the pattern cover. Constructing the light "Λ includes constructing the mask and releasing the light at a preset distance == line feature 'and next to the desired line feature-feature Or auxiliary line = special :: location :: Choose one of the required lines for constructing the photomask, and the size of the release feature is slightly larger than the corresponding required line feature. Ge ^ Auxiliary line features. When applying this mask combination to order the pattern printing, first use the structured mask to perform the first exposure step, and use the auxiliary features on it to obtain better pattern printing quality, and then use the lifted mask to perform the second exposure step '# In order to eliminate the auxiliary pattern formed in the first exposure step, leaving the desired pattern. According to the above-mentioned object, the present invention further provides a photomask combination 'at least includes:-constructing a photomask, and the photofabricated leather includes at least a plurality of required features and a plurality of auxiliary features ... Next to the required feature, and the auxiliary feature has a preset distance from the adjacent required feature; and a release mask, and the release mask includes at least a plurality of paper standards that are applicable to China National Standard (CNS) A4 specifications ( 210 X 297 public meals) (Please read the notes on the back before filling out this page) _-------- ^ --------- ^ Μ 部 智 智 ¾Property Consumption Cooperative Print System 491967 A; B7 V. Description of the invention (Release feature 'where the positions of these release features all correspond to the required or auxiliary features of the above-mentioned structured photomask, choose one of them, 1 the size of these release features is slightly larger than The complex% t + Τ%, the size of the corresponding required features and auxiliary features. According to the above-mentioned purpose, the present invention further provides a method for pattern printing. In this method, a photomask combination is used, and This photomask pack Constructing a photomask and removing the photomask, 1 The method at least includes: providing a base material in the earth material, a first semiconductor layer has been formed; It includes at least a plurality of required features and a plurality of auxiliary features, so a plurality of required patterns and a plurality of auxiliary patterns are formed in the first semiconductor layer, and the substrate is exposed approximately; a second semiconductor layer is formed to cover the substrate , Plan, and auxiliary pattern h and fill in the required figure 层: ^ layer, two required patterns and auxiliary figures and auxiliary figure and the second semi-conductor defined by the lifting mask ^ > includes a plurality of lifting features to These lifting features are m ^ ^ ^ .u ^ ^ i 1 All correspond to the required features and auxiliary features of the photomask-the size of a divided feature is slightly larger than the corresponding required feature: You can selectively turn on the required patterns _ Features, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

_ (Please read the notes on the back before filling out this page) ___ • n ϋ n n n n n “· 0 * I n n all l n n n I l

This paper is suitable for National Standards (CNS) A4 specifications (21G x 297 public meals of the country of wealth) II n. / / Printed by the Intellectual Property Bureau of the Ministry of Economy Staff Consumer Cooperative Λ7 V. Description of the invention (a substrate, of which # 阻 层The first photoresist has been formed with a photoresist layer; the required features of the photomask for the photomask and a plurality of 'wherein the photomask is configured to include at least a plurality of second exposure steps, in which 1 features are assisted; The photoresist layer is characterized, and these release features include at least a plurality of release-required features on the release mask with > 5 M, and the positions of i all correspond to the U-signs and auxiliary features constituting the mask, The size of the second feature is larger than that corresponding to the corresponding feature. ~ The feature or auxiliary feature; and a development step diagram is briefly explained: The preferred embodiment of the present invention will be changed in the future graphics. Detailed explanation, in which: “r” is supplemented with the following FIG. 1 “showing a top view of the mask of the preferred embodiment of the present invention, in which the structured mask is mounted on the mask n” to set up the required Isolated Line-Located on both sides of the Isolated Line feature Features; Figure 2 shows the top view of the release mask of the first mask in Figure 1, and the auxiliary features of the release feature & of the release mask; the position of the feature is corresponding to the construction light list The top view ^ 3Γ is another example of the disengagement of the light army shown in Figure 1: Figure 'where the position of the release feature of the release mask corresponds to the feature of the isolated line of the installation mask; this paper scale Turn over ^ house standard (cns) w secret ^ 7 public meals

491967 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Description of the invention () Figure 4 is a top view of a second structured photomask showing a preferred embodiment of the present invention, where the photomask is configured The upper line / gap (Une / Space; L / S) ratio is 1: 1; Figure 5 is a top view of a third configuration light sheet showing a preferred embodiment of the present invention, where this configuration The line / gap ratio on the reticle is 1: 3; FIG. 6 is a top view of a fourth photomask that is a preferred embodiment of the present invention, where the line / gap on the photomask is configured. The ratio is 4.1; the figure is a top view showing a fifth structured photomask according to a preferred embodiment of the present invention, wherein the line / gap ratio on the structured photomask is 1: 3.9; FIG. 8 A top view of a sixth structured photomask showing a preferred embodiment of the present invention, wherein the line / gap ratio on the structured photomask is 1: 3 · 9, but the auxiliary features used are narrow Figure 9 is a top view showing a seventh structured photomask of a preferred embodiment of the present invention, wherein the line / gap ratio on the structured photomask is Xia n, and Figure 10 is a drawing One preferred embodiment of the invention A top view of the eighth structure cover, wherein the line / gap ratio on the structured photomask is ^: U, and FIG. 11 is a top view of a ninth structure cover showing a preferred embodiment of the present invention. The line / gap ratio on the structured photomask is 丨: 2 5 ·, and FIG. 12 is a top view showing a tenth type of mask according to a preferred embodiment of the present invention. About one-dimensional features of the required special mounting light. Figure 13 is a top view of the photomask showing the eleventh preferred embodiment of the present invention, in which the required structures on the photomask are mounted. Jun Zheng; Fu Zheng is a two-dimensional special private paper standard applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 public love (please read the precautions on the back before filling this page) ------- ^- -------line-

-nnn I 491967 Λ; B7_V. Description of the invention () Figure 14 is a top view showing a twelfth structured photomask of a preferred embodiment of the present invention. The required features are two-dimensional features, and the required features are surrounded by two layers of auxiliary features; Figures 15 to 19 are flowcharts showing the pattern printing of the first preferred embodiment of the present invention; Figures 20 to 22 are flowcharts showing the pattern printing of the second preferred embodiment of the present invention; and Figures 23 to 25 are the intellectual property of the Ministry of Economics showing the third preferred embodiment of the present invention The flow chart of the pattern printing of the bureau employee consumer cooperative. Compare the drawing numbers, and explain * 100 [Mask 102] Features required 104 Auxiliary features 106 Width 108 Visibility 1 10 Distance 120 Cancel mask 122 Cancel feature 140 Cancel mask 142 Cancel feature 160 Construct mask 162 Required features 164 Assistive features 180 Constructing a mask 182 Required features 184 Auxiliary features 200 Constructing a mask 202 Required features 204 Auxiliary features 206 Auxiliary features 220 Constructing a mask 222 Required features 224 Auxiliary features 226 Auxiliary features 9 This paper Standards are applicable to China National Standard (CNS) A4 specifications (210 x 297 mm) (please read the precautions on the back before filling this page) Order ---- Line 丨 · 491967 Λ7 _B7 V. Description of the invention () 240 Structure Photomask 242 Desired feature 244 Assistive feature 260 Constructing reticle 262 Desired feature 264 Assistive feature 280 Constructing reticle 282 Desired feature 284 Assisting feature 300 Constructing reticle 302 Desired feature 304 Assisting feature 306 Assisting feature 320 Photomask 322 Desired Features 324 Desired Features 326 Auxiliary Features 328 Auxiliary Features 330 Auxiliary Features 332 Auxiliary Features 334 Auxiliary Features 336 Auxiliary Features 360 Substrate 362 First Semiconductor Layer 364 Auxiliary Pattern 366 Desired Pattern 368 Second Semiconductor Layer 380 Substrate 382, 1 > 7Ό resist layer 384 auxiliary feature latent image 386 required feature latent image 388 link area 390 required pattern 400 substrate 402 photoresist layer 404 auxiliary feature unexposed area 406 required feature unexposed area 408 required pattern (please Read the notes on the back before filling this page) Order --------- line! Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, the invention is described in detail: The present invention discloses a photomask combination and the application of this photomask combination to carry out Figure 10. This paper & degree applies to China National Standard (CNS) A4 (210 x 297 mm) ) 491967 Λ7 V. Description of the invention (The method of case printing, which is a photomask. It consists of constructing a photomask and releasing the photomask. And + the invention's pattern printing "The clever method is to use the method of construction and release 'sequentially Construct the photomask and unmask the mask and expose it twice to transfer the desired pattern to the semiconductor substrate. By constructing the high spatial frequency of the photomask and the uniform warmth of the light ^ light level 4, Under the condition that the numerical aperture and light source of the optical exposure system are not changed, the ancient time is captured. The quality of the printed pattern is obtained. In order to make the description of the present invention more detailed and more complete, we can borrow K cups and 70s. It also matches the diagrams in Figures 1 to 25. As the current snow road design-road t t is white, if the line gap ratio of the circuit characteristics is limited to a certain range ητ, the circuit will be greatly increased ^^ Design difficulties Therefore, it is not possible to specify the line gap ratio of lightning circuit materials, electric current, and charge characteristics at the design stage. After 70% of the design, the gap of the line gap ratio of the private road features ranges from 1 to infinitely small. That is, from the distribution of the same line width and the distance between the lines to the isolated line that was originally alone. Because the line gap ratio of the circuit features on the photomask is different from Heshixiang® & J, it will affect the uniformity of the pattern printing, and the line "The gap ratio is not proper", and a vertical line, the quality of the pattern after transfer is quite low. Therefore, the main feature of the present invention is to provide a method to reduce the line gap ratio of a known photomask, and then follow the figure. The quality of the print of the retreating yoke pattern. Please refer to Fig. 1 and Fig. 4 and 5 to ^. To the 14th figure, this is a description of the preferred embodiment of the present invention with several different lines ^ ^ ^ ^ Construct the reticle. Please refer to Figure 1. The reason is not the top view of the first constructing light, A ". The reticle 100 includes at least the required features, 02 and the required features 102 on both sides. The paper size of the supplementary private paper applies the Chinese National Standard (CNS) A4 specification (210 X 297 meals) (Please read the (Please fill in this page again)

------- ^ --------- I Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 491967 V. Description of the invention () Second levy 1 ° 4 , 'Its T's special feature 102 is an independent isolated line, and the auxiliary ^ / 104 is a large-size auxiliary feature (Full Size Assist Feature; =). The auxiliary feature is approximately between Q.5 and 2 times the width 106 of the adjacent required 1Q2, and the shape of the auxiliary feature is similar to the shape of the adjacent required feature 102, and The distance 110 between the feature 104 and its adjacent desired feature 102 is approximately between 0.5 and 3 times the width of the desired feature 102, and the appreciation of the auxiliary feature 104 π 8 & & & ^ is preferably approximately equal to the width of the desired feature 1 2 2_Zhutunyu 1 04 and its adjacent desired feature} 〇 The distance between 2 " 〇 is preferably about Between 1x and 5x the width of the desired feature 102. However, the size of the width of the auxiliary feature 104 above 108 and the distance 110 between the auxiliary feature 104 and its adjacent desired feature 102 may be different according to the imaging tools and processes, and according to the required imaging effect: For example, the depth of focus, the exposure latitude ('Latitude') cannot expose the focus, etc., and the adjustment I i is not limited to the above range. A feature of the present invention is that the auxiliary feature 104 can be exposed. In addition, the distance U0 only needs to prevent the auxiliary feature 104 from forming a pattern with the adjacent desired feature 102 after the exposure. Although the above description describes the structured photomask 100 in the i-th figure, the setting rules of the line width of the auxiliary feature, the distance between the auxiliary feature and the required feature are also applicable to the present invention. Either construct a photomask. In addition, if I specifically explain, the following lines are used to illustrate the auxiliary features of the photomask 12 The paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 public meals-(Please read the note on the back first) Please fill in this page again for matters) 0 —Order --------- Online! 丄 / 丄 / Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, Agricultural Λ7 V. Description of Invention () The width of the desired feature: The distance between the signs is about the same: refer to Figure 4, the line gap ratio of the system margin is shown. Top view. 167 twists include the two required clearance ratios, 6-1 'according to the above-mentioned special feature of the planting cloth ... See Zhaodi, the figure is divided into at least two required clearance ratios i: 3 on the outside of the required ridge [ First, there is a price ± η 1R9, which is 1 82. Therefore, a space frequency is set for the auxiliary beer mask between the two required '1s and outside. Then, the ::: 4 is used to increase the construction gap. The ratio is to construct the f light: male, Figure 6, which is a top view of the line m and the first +. There are two less line gap ratios on the photomask 200 ... … The required feature 202, in order to increase the spatial frequency of the structure ^ 〇 Therefore, auxiliary features 204 are set on both sides of the required feature 202. Since the two auxiliary features 位于 between the required feature 202 are quite close Therefore, these two auxiliary features 204 can be merged into a wider auxiliary feature 206, and finally the layout shown in Fig. 6 is formed. Please refer to Fig. 7 'and-and refer to Fig. 8 to construct The photomask 22 has been formed with at least two required features m with a line gap ratio of 1: 3.9, and the photomask 240 has been formed with at least two required features with a line gap ratio i: 3 9 242 » In order to increase the opening density of the photomask, the photomask is installed separately. Where -------------- (Please read the precautions on the back before filling this page) 线 丨 # 13 491967 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention () Λ; Β7

Features 222 are required on both sides of the feature. They are called “Ding Wei” and “II”, and the line gap ratio is 1: 3.9. Therefore, they are located at the required feature 222. “Auxiliary features 224 will overlap to form a wider one. Auxiliary feature 226. In addition, for the structured photomask 240 with a line gap ratio of 1: 3.9, it is also possible to produce ^ JJ knives. Auxiliary features 244 are set between the required features 242 and outside. The line-to-space ratio of the features is 1: 3.9, so the distance between the auxiliary features of the required features 242 and the required features 242 is large. When the distance between the required features is between 1 times the width of the required features and When it is twice, the space between the required features is not enough to set an auxiliary feature with the same width as the required feature, so the auxiliary feature can only be set outside the required feature. Please refer to Figure 9, The line gap ratio of the desired feature 262 on the photomask 26〇 is i: 1 <5, so the auxiliary feature 264 is provided outside the desired feature 262. Similarly, the photomask 28 on the photomask of FIG. 10 The required gap 282 has a line gap ratio of 1: 1.2, and there is not enough space between the required features 282 for setting assistance. Therefore, the auxiliary feature 284 is also provided outside the desired feature 282. 'On the other hand, when the distance between the required features 302 is between 2 and 3 times the width of the desired feature 302, such as As shown in the nth figure, a narrow auxiliary feature 3 〇6 can be set between the two required features 3 02, and an auxiliary feature with the same width as the desired feature 302 can be set outside the desired feature 302 and The distance between the auxiliary feature 306 and the required feature 302 is approximately equal. 14 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 meals (please read the precautions on the back before filling this page). · Order --------- Line-V. Description of the invention () The distance between the auxiliary feature 304 and the required feature 30. In addition, the same setting principle can also be applied to Xingyou Erhui On the photomask, please refer to Figure 12 to Figure 14. The structure is formed with = dimensional, such as a typical polycrystalline stone closed pole: the feature includes at least the required feature 322 and the required feature 324: help feature 326, and Linear auxiliary features 3 According to the above-mentioned setting rules, they are respectively planted between the required features = features 324 and outside , As shown in Figure 12. If the construction of the light room permits, a ^ flat sign can be added above the desired feature 322, and this level of auxiliary features and auxiliary features 326 and auxiliary ears connected to form auxiliary features 332, such as As shown in Figure 13. At this time, there is still enough space on the cover 320, and an additional feature 334 and 336 'can be added to the auxiliary features and auxiliary features 330, respectively, as shown in Figure 14, to enhance its effect. From the above description, it can be known that when setting auxiliary features, the auxiliary shape, size, and location are based on adjacent required features to obtain better imaging performance. After the construction of the photomask is completed, the corresponding photomask is released according to the photomask construction. Please refer to FIG. 2 for a top view of the lift-off mask with the mask configured. Remove the mask 12〇! Feature structure [above ^, this two-dimensional and two-dimensional auxiliary sign 330 series and the required 'single 3 2 0 air-assisted special feature' feature 3 2 8 If the light sign 332 is configured to assist the feature The characteristics are determined by the form of the feature. The first picture includes at least 49196 / Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () A plurality of release features 122, the t release features ⑴ Structure of FIG. 1 The position of the auxiliary special heart ridge of the mask 对应 corresponds to the size of Zheng 1 2 2 and is slightly larger than the size of the auxiliary feature 104. And refer to Figure 3, which is shown in Figure 1 as the structured photomask except the top view ®. The release mask m at least includes a release feature i42, where the position of the release feature 系 corresponds to the required special position of the photomask ⑽ shown in FIG.}, And the size of the release feature 142 is slightly larger than the size of the required feature 102. Here, only the release mask 12o and release mask 14 of the photomask 100 configured in FIG. I are illustrated, and any photomask used in the present invention has a corresponding photomask for release. , And the positions of the release features on these release masks all correspond to one of the required features and auxiliary features on the construction mask, and the size of the release features is slightly larger than the corresponding required features. And the size of auxiliary features. The present invention further applies a combination of a photomask and a photomask to perform pattern printing, which is a method of packaging and unpacking (PAU). First, the photomask is used to form a desired pattern and an auxiliary pattern. According to the difference of the manufacturing process, an appropriate releasing mask is selected from the releasing mask constituting the mask to selectively form a desired pattern. The following is an example of the method of constructing and dismantling the invention, which is only an example. The present invention is not limited to this. Any method that uses the concept of constructing and dismantling to improve the quality of pattern printing should be included in this document. Within the scope of the invention. (Please read the precautions on the back before filling out this page) • Line 丨 · -n III n H-n I n-16 This paper size is applicable to China National Standard (CNS) A4 (21〇X 297 mm) Λ7Five 、 Explanation of the invention () Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Please refer to Figures 15 to 19, which show the flow chart of the pattern printing of the first to best examples of the present invention, of which &amp; Before using the structured photomask of the present invention and its pattern printing, the substrate of the semiconductor 3 60 is covered with a photomask. Firstly, the first semiconductor layer and the second semiconductor layer are defined by a structured photomask. The semiconductor layer 362 may be a photoresist layer or an insulating layer. When the photoresist layer is used as a photoresist layer, the semiconductor layer 362 can be directly defined on the photoresist layer. When the body layer 362 is an ordinary insulating layer, a second photoresistance is needed to define the insulating layer. Complete the first — /, reproduce a layer of light 丄 守 Shou 362 thick 362 of the shame 形成 形成 in the first semiconductor layer 362 to form moxibustion, S ΰ ° 66 and auxiliary map 辅助: and: the substrate 36 is exposed. 'Form the structure as shown in the figure'. The second waste + conductor layer 3 68 is covered on the substrate 36G, the first half: the layer, the desired pattern 366, and the auxiliary pattern: the required pattern 366 and the auxiliary pattern 364, Zhenman ’s lifted photomask defines the second semiconductor layer, as shown in the figure. Then, the layer is used, where the lifted photomask includes at least a plurality of lifted features, and: the positions of the signs all correspond to the required features for constructing the photomask. And auxiliary features, and the size of the release feature is slightly larger than the corresponding required feature or auxiliary feature. When the second semiconductor is a photoresist layer, it can be defined directly on this photoresist layer. When the second semiconductor layer 368 is insulated, it is necessary to cover it with a photoresist to define this insulating layer. In addition, 'the second semiconductor layer 368 itself is a positive photoresistor or uses a positive photoresistor 17 --- -------------- Γ4 Read the urgent matters on the back before filling in this page> 0 Line · Γ, Ben's Zhang &amp; Degree_ 中 关 家 ^ 准 （CNS) A4 Specifications (210] 297 mm) V. Description of the invention () Defined by # h Unlocking special reticle for removing photo reticle The desired feature, and the position of the back of the mask is lifted: corresponding to the feature on the structure when the feature is transparent, 'can choose ::: two, and the mask is lifted into the structure shown in the figure'; when the solution- The shape of the pattern 366 'corresponds to the auxiliary feature of the photomask, and the release of the :::: sign position is set at 364. When ^, it can selectively cover the auxiliary figure 64 and open the S f 366 subsidy. Picture structure. The result of A is as shown in Figure 丨 8: The description is only an example, the present invention is not limited to this, the position of the ", release feature 'release feature in the interpretation is the corresponding-the position of the required feature or auxiliary feature /, w;, "of t 1 and the types of pre-resistance, select the appropriate combination according to the need. The following M. In the preferred embodiment of the second preferred embodiment of the present invention described below, the selection of the lifting mask is also applicable to this viewpoint. 0 References, Figures 20 to 22, which are shown This is a flowchart of pattern printing of the second preferred embodiment of the present invention. This embodiment also uses the combination of the structured photomask and the photomask release of the present invention. First, a photoresist layer 382 is formed and covered on a semiconductor substrate 3 80. The photoresist layer 3 82 is a dual-polarity photoresistor. Under normal exposure conditions, the bipolar photoresistant behaves like positive light. The resistance is general, and under the condition of high light energy or exposure dose, its characteristics are like negative photoresist. Then, in the normal exposure of 18 paper wattages, the Chinese National Standard (CNS) A4 specification (210 X 297 mm) is applied. -------------- 0 ί Qi First read the note on the back 亊Please fill in this page again) Order --------- Line 丨 · Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed and invented the description (, under the conditions of light {丨 where hibiscus X, decoration * cover to photoresistance 3 82 performs the first exposure step, the feature, and the cover includes at least a plurality of required features and a plurality of auxiliary to form a plurality of auxiliary feature latent images 384 ::: required in the photoresist layer 3 82 The characteristic latent image 3 86 'is shown in FIG. 20. Then, the light exposure = or different from the scalar used in the first exposure step, and the solution is used to, 1. The second exposure step is performed on the photoresist layer 382. Where the release mask = includes a plurality of release features. When the position of the release feature corresponds to the required feature of the structure: the release mask has a transparent background and the release feature = opaque; and when the position of the release feature corresponds to the structure When the auxiliary feature of the photomask is installed, the 'release mask' has an opaque background, and the release feature is transparent. In addition, the solution The size of the feature is slightly larger than the corresponding required feature or auxiliary feature. Therefore, the exposure light in the second exposure step will project the auxiliary feature latent image j84 'and form a link region 3 8 8 on the surface of the auxiliary feature latent image 3 84. As shown in Figure 21. Then, the developing step is performed. Since the linking region 3 8 8 can prevent the developer from invading, the desired characteristic latent image 3 86 can be selectively removed, and in the photoresist layer 3 82 Form the required pattern 390, as shown in Fig. 22. Please refer to Fig. 23 to Fig. 25, which illustrate the flow chart of pattern printing of the thirty-third preferred embodiment of the present invention. The combination of the structured photomask and the photomask removal method of the present invention is used. First, a photoresist layer 402 is formed to cover the semiconductor substrate 400, in which the photoresist layer is a negative photoresist. The photoresist layer 40 is subjected to the first exposure step, which requires the structured mask to include at least a plurality of required features and a plurality of subsidies. 19 This paper is applicable to the Chinese national standard CCNS. (Read the notes on the back before filling out this page)

. # -------- Order --------- line L Printed by the Ministry of Economy, Intellectual Property, Employees, Consumer Cooperatives -n ϋ-297 (堃) 491967 Λ7 V. Description of Invention () Features Therefore, in the photoresist layer 4, there are 忐, 、, 幵, 幵, 稷, 幵, 辅助, 4, 辅助, 辅助, 科, 而, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 辅助, 0, 复, 辅助, a few auxiliary features, unexposed areas 4, 0, and a plurality of Soretko * 7, while the special area is not exposed, 406, as shown in Figure 23 As shown. Then, a second exposure step is performed on the photoresist layer 402 by using the release mask, wherein the release mask includes at least a plurality of release features. When the position of the release feature corresponds to 4% of the weight of the mask, the release mask has a transparent background, and the release feature is ^; poem aa. Is a full moon, although the position of the release feature corresponds to the mask In the auxiliary feature, the release mask has an opaque background, and the release feature is transparent. Because the size of the release feature is slightly larger than its corresponding required feature or auxiliary feature, the exposure light in the second exposure step will project the auxiliary feature unexposed area 404, and expose the auxiliary feature unexposed area 404. As shown. Next, a developing step is performed to selectively remove the high-feature unexposed areas 406, and a desired pattern 408 is formed in the photoresist layer 402, as shown in FIG. One of the advantages of this month is to provide a photomask combination, and this photomask combination includes constructing a photomask and its releasing photomask. Because the reticle has auxiliary features that are additionally recognized next to the required features, the development quality of pattern printing can be greatly improved, and the process yield can be improved. Another advantage of printing the invention by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is that because the size of the auxiliary features for constructing the photomask does not need to be so small that it cannot be exposed, not only the improvement effect of pattern printing is significant, but also Easy to make. In addition, because the required pattern can be selectively retained by lifting the photomask, the process considerations need not be limited to auxiliary 20 491967 Λ7 B7_ V. EXPLANATION OF THE FEATURE EXPLANATION PROBLEM · Increases the process space. Another advantage of the present invention is to provide a method for pattern printing using a combination of photomasks, using a photomask having a high spatial frequency, and using a photomask releasing photomask to selectively form a developing image. High quality required patterns. Therefore, it is not necessary to change the numerical aperture of the optical exposure system and the exposure light source when performing pattern printing to improve the focus depth and resolution of pattern printing. As will be understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below. (Please read the notes on the back before filling this page)

· # -------- Order --------- line J Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is printed in accordance with China National Standard (CNS) A4 (210 X 297 public f) )

Claims (1)

491967 A8 B8 C8 D8 VI. Application for patent scope 1. A combination of light singles, at least: 构 A structured reticle, and the structured light lift includes at least a plurality of required features and a plurality of auxiliary features, wherein the 隹 auxiliary The feature is located next to the required features, and the auxiliary features have a preset distance from adjacent required features; and a release mask, and the release light sheet includes at least a plurality of release features, where The positions of the release features correspond to the sizes of the masks that are slightly larger than the features required for the release features, and the dimensions of the release features correspond to the dimensions of the required features (please read the back Please fill in this page again for attention} Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 2 · As for the photomask combination described in the first item of the scope of patent application, the shapes of these auxiliary features are similar to those of adjacent ones The shape of the feature 3. The mask combination as described in item 1 of the scope of the patent application, wherein the width of the auxiliary features depends on the size, shape, and position of the adjacent desired features. 4. The mask combination described in the first range of the patent application scope, wherein the width of the auxiliary features is between about 0.5 times and 2 times the width of the required features. This paper size applies China National Standard (CNS) A4 Specification (210 X 297 I -------- Order · ------- 丨 ▲ 22 2. The patent application scope of the Intellectual Property Bureau of the Ministry of Economic Affairs and the Consumer Cooperatives printed the mask relief as described in the 1μ item of the subsidy feature of the patent scope, where the size, shape, and size of these features are required. The distance of features depends on the required features and locations. Supplementary: The mask described in the special item, wherein the distance between the required features of the 05 and 22 of the width of these features is approximately between 3 and 3 times the required features. 7. A photomask combination, s — constructing a boat, a photomask, and a sign and a plurality of auxiliary features. The photomask includes at least a number of required special features next to it, and these auxiliary features are among them. The auxiliary features are located at the preset distances; and, the required features with adjacent features have a release mask, a sign, wherein the release features include at least a plurality of release features. The positions of the auxiliary features' ,, and ^ correspond to the features of the structured photomask, and the sizes of the release features are slightly larger than the sizes of the auxiliary features corresponding to the features. 8. The photomask combination described in item 7 of the scope of patent application, wherein the shapes of the auxiliary features are similar to the shapes of the adjacent desired features. 9. The photomask combination as described in item 7 of the scope of the patent application, wherein the width of the auxiliary features depends on the size and shape of the adjacent required features. 23 This paper applies the Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) (Please read the precautions on the back before filling this page) tr --------- line "1 nn I nn I Shape, position, and scope of patent application 10 · If the scope of patent application ... The width of the auxiliary feature is about the width of the mask combination, which is between these times. The width of these required features is 0.5 times to 2 lh. For example, the scope of patent application 帛 7 institutes, f auxiliary features and the adjacent mask + +, the size and shape of these features, and The distance between the special features depends on the required features. As the scope of the patent application ... the auxiliary features are combined with the masks described in the adjacent items, where the width of these features is 0 to 5 and The distance between features is approximately between these required features. n. A photomask combination, including at least: a photomask, the photomask, and a plurality of auxiliary features, including: beside a plurality of required special features, and the auxiliary features, the auxiliary features are located in the The preset distance H, the characteristics required by the adjacent and adjacent ones have-a release mask, and the release mask includes at least a plurality of release features, and the positions of the 4 release features all correspond to the structured light The auxiliary features of the mask and the required features: Choose one, and the size of the release features is slightly larger than the auxiliary features corresponding to the release features. 24 The paper size applies to Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) (Please read the notes on the back before filling out this page) --- Order · -------- Line. The Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, prints the intellectual property of the Ministry of Economic Affairs The bureau's consumer cooperative printed 491967 A8 B8 C3 D8 t, the size of the patent application scope and the size of these required features. 14. The photomask combination described in item 13 of the scope of the patent application, wherein the shapes of the auxiliary features are similar to the shapes of the adjacent desired features. 15. The photomask combination described in item 13 of the scope of patent application, wherein the width of the auxiliary features is approximately equal to the width of the desired features. 1 6. The photomask combination described in item 13 of the scope of the patent application, wherein the distance between the auxiliary features and the adjacent required features is between about 1 to 1 of the width of the required features, 5 times between. 17. A method for pattern printing using a photomask combination, wherein the photomask combination includes a structured photomask and a release photomask, and the method at least includes: providing a substrate, wherein a substrate is formed on the substrate; There is a first semiconductor layer; the first semiconductor layer is defined by the structured mask, wherein the structured mask includes at least one required feature and at least one auxiliary feature, and the at least one auxiliary feature is located on the at least one required feature There is a preset distance between the feature and the at least one desired feature, so that at least one desired pattern and at least one auxiliary pattern are formed in the first semiconductor layer, and the substrate is approximately exposed; 25 paper dimensions Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page) # Order --------- Line 'Employees ’Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 5i 491967 A8 B8 C3 D8 t, the scope of the patent application forms a second semiconductor layer covering the substrate, the first semiconductor layer, the at least one desired pattern, and the at least one auxiliary pattern And filled up at least one auxiliary pattern, and the pattern of the at least one desired; and a mask to define the release of the second semiconductor layer, wherein the lift comprises at least one at least on the mask releasing characteristic. 18. The method according to item 17 of the scope of patent application, wherein the first semiconductor layer is a photoresist layer. 19. The method according to item 17 of the scope of patent application, wherein the first semiconductor layer is an insulating layer. 20. The method according to item 17 of the patent application, wherein the second semiconductor layer is a photoresist layer. 2 1. The method according to item 17 of the scope of patent application, wherein the second semiconductor layer is an insulating layer. 22. The method of claim 17 in which the shape of the at least one auxiliary feature is similar to the shape of the at least one desired feature. 2 3. The method according to item 17 of the scope of patent application, wherein the width of the at least one auxiliary feature is approximately 0.55 of the width of the at least one required feature. 26 This paper size is applicable to Chinese National Standard (CNS) A4. Specifications (210 X 297 mm) (Please read the notes on the back before filling out this page) # -------- Order --------- Line # -------- Γ..Γ ------ D8 D8 Wherein the range from the patent application range to about 2 times. The distance is about: The method described in item 17 of the second patent, its "preset interval .... X", a width of 0.5 times to about 3 times the width of a desired feature-solution of the method described in item 17, … At least the location of the feature, and the size of the release feature for the at least-required special release feature of the reticle should be slightly larger than the size of the at least one required feature of the at least one percent. The position of the first release feature in the range of item 17 corresponds to the position of the second sign, and the pair of the at least one auxiliary special release feature is covered first; ^ The size of the release feature is slightly larger than the at least one should Dimensions of at least one auxiliary feature. 27. A method for applying one to one person &gt; mask group person 3 h &quot; 仃 pattern printing, wherein the mask, and σ includes a structured mask and includes: Except for the first mask, and the method provides at least a substrate, wherein the substrate is formed with a photoresist layer, and a photoresist layer is formed on the photomask, and the photomask is subjected to the first exposure step. , Where a structured mask includes at least one , And 詨 $ / 1, ^ Fusan and at least one auxiliary feature and even V — auxiliary features are located next to the required features of the one less one and are in accordance with the 27 paper standards Gu + guan_ ^ NS) A4 size (21G X 297 public S) (Please note on the back of Mff M before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (ί &lt; ϋ I ί (* ϋ I n I— nninm in nnnn ϋ nnnnnnn Ministry of Economic Affairs) Printed by the Intellectual Property Bureau employee consumer cooperative 491967 A8 B8 CS D8 t, the patent application has a preset distance between the at least one required feature; and a second exposure step is performed on the photoresist layer with the release mask, The release mask includes at least one release feature; and a developing step is performed. 28. The method according to item 27 of the patent application scope, wherein the photoresist layer is a dual-polarity photoresist. 2 9. The method according to item 28 of the patent application scope, wherein the light energy intensity of the first exposure step is smaller than the light energy intensity of the second exposure step. 3 0.0. The method according to item 28 of the patent application scope , Which advances The first exposure step further includes forming at least one desired feature latent image and at least one auxiliary feature latent image in the photoresist layer. 3 1. The method according to item 27 of the scope of patent application, wherein the photoresist layer The photoresist is a negative photoresist. 3 2. The method according to item 31 of the scope of patent application, wherein performing the first exposure step further comprises forming at least one desired feature unexposed area and at least one auxiliary in the photoresist layer. Features unexposed area. This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling out this page) Daddy • Mouth-m an —ϋ emmt in in I s Hi flu nv n an m 11 nn · Printed by A8, B8, C8, D8, Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, patent application scope JJ • The method described in item 27 of the patent application scope, wherein the shape of the at least one auxiliary feature A shape similar to the least-required feature. 3 4 · The method as described in item 27 of the scope of patent application, wherein the width of the at least auxiliary feature is between about 0.5 times and about 2 times the width of the at least-desired feature. 35. The method according to item 27 of the scope of patent application, wherein the preset distance is between about 0.5 times and about 3 times the width of the at least one desired feature. 36. The method according to item 27 of the scope of patent application, wherein the position of the at least release feature corresponds to the position of the at least one desired feature of the photomask, and the size of the at least one release feature is slightly larger than the at least The size of the at least one desired feature corresponding to a release feature. 37. The method according to item 27 of the scope of patent application, wherein the position of the at least one release feature corresponds to the position of the at least one auxiliary feature of the photomask, and the size of the at least one release feature is slightly larger than the at least The size of the at least one auxiliary feature corresponding to a release feature. The method according to item 27 of the scope of patent application, wherein performing the developing step further comprises forming at least one desired pattern in the photoresist layer. (Please read the notes on the back before filling this page) Order ------------------ 29