TW486830B - High resolution and brightness full-color LED display manufactured using CMP technique - Google Patents

Abstract

A full-color LED display consists of red, green, and blue LED elements. Red and green LED elements are formed on a first substrate and covered by a first passivation layer. A second substrate is bonded to the passivation layer and polished to a thin substrate layer. A blue LED element is formed on the thin substrate layer. Then, a second passivation layer covers all three LED elements to form a full-color LED device. By arranging multiple full-color LED devices in rows and columns, and addressing and controlling each LED device by suitable wires, electrode layer and peripheral circuit, it is able to form a full-color LED display with high resolution and brightness.

Description

486830 V. Description of the invention (1) Field of the invention The present invention relates to a display device (d i s p a y d e v i c e). In particular, it is related to a light emitting diode (LED) display having a local resolution (resolution) and high brightness (brightness) and a manufacturing method thereof. BACKGROUND OF THE INVENTION Recent developments in computers, personal communications equipment, and various information equipment have brought about a new industrial revolution in human history. These electronic devices have clearly changed human life. Almost all of these electronic devices require displays to display input and output messages. Many researchers and manufacturers are dedicated to research, new resolutions, colorfulness, wide view angle and redundancy, as well as new display devices with small size and light weight. Cathode ray tubes (CRTs) have been widely used in display devices of televisions or computers, and as a display device. Although CjT has many advantages, its large size and awkward weight make it inconvenient, or even impossible to become a clothing in delicate and portable electronic devices. In recent years, flat liquid crystal displays (f lat 1 iquid crystal l sp) device has been widely used in notebook or personal communication equipment, and his flat display devices, such as plasma display (pi aSma uspiay) and magnetic field excited display (fieu emissi⑽dispiay),

Page 4 486830 V. Description of Invention (2) They are also developing and searching for their market locations. LED represents another type of display device with potential. This display is used as a light weight and high quality display device. However, because full-color LED display technology still has many difficulties to be overcome, LED devices are generally only used for traffic signs and vehicle lights for lighting. Some advertisements—or bul let in boards—also use LEDs as display devices to display simple messages. In the field of semiconductor technology, LED devices are generally manufactured with an active layer between the upper and lower claddding layers on top of a semiconductor substrate. The composition of the semiconductor material used in these layers determines the color of the LED device. The LED layers of different materials for different colored shirts can only be grown on or implanted on a suitable substrate, because a semiconductor substrate is basically suitable for forming two kinds of LED excitation light with closer spectra ( emitting Ught), such as red and green LEDs or green and blue LEDs. In order to make a Wang Cai LED device, the second type of LED must be formed on a different substrate. As a result, although red and green LEDs can be made on the same substrate, it has always been difficult to make blue LEDs on the very same substrate. However, full-color LED displays are still being developed. If a full-color LED display could be successfully produced, it would have many

V. Description of the invention (3) = advantages' such as wide viewing angle, small size and light weight. Therefore, there is an urgent need to develop full-color, high-resolution and high-brightness LED displays. SUMMARY OF THE INVENTION The present invention meets the needs of full-color, high-resolution, and high-brightness LED displays. Its main purpose is to provide a new structure of a full-color LE] device. Another object is to provide a method for making such a full-color LED device. Another object of the present invention is to provide an LED display composed of a plurality of full-color 15:]) devices. A full-color LED display needs to manufacture red, green, and blue LED elements (semiconductors) in a semiconductor element structure. The present invention uses wafer bonding technology and chemical mechanical polishing (CMP) technology to provide on more than one substrate 'and to form red, green and blue colors on the same display. LED components. According to the present invention ', a first semiconductor substrate is first prepared to manufacture a first-color LED element. The first-color LED element is fabricated on a buffer layer, and the buffer layer covers the first semiconductor substrate. Generally speaking, the LED elements of the second color can also be manufactured on the same substrate and adjacent to the LED elements of the first color. A first isolation layer is then formed on the buffer layer and the two LED components. A second semiconductor substrate is bonded to the first isolation layer ′ and polished (po 1 i sh) into a thin substrate by chemical mechanical polishing technology. Next, a third color LED element is fabricated on the second substrate. here

486830 V. Description of the invention (4) A second isolation layer is implanted on the semiconductor device structure to form a third-color LED element. Here, a full-color LED device is manufactured. In the present invention, the order in which the red, green, and blue LED elements are formed is not critical. Depending on the selected semiconductor substrate, the second LED / LED element can be formed on the first or second substrate. In general, two-color LED elements can be formed on the same substrate, * LED elements can also be turned on? # 太 円 ^ L t Tba Fr. _ .. θ ν is formed on the same substrate. However, red and blue LED το components are not easily formed on the same substrate. : Several full-color LED devices are arranged in rows and columns With appropriate metal wires and electrode layers (electróde i === Xi Ya ⑽Ult) to address and control, you can make a full-color LED display. The UD frame is accompanied by the following drawings, detailed description of the embodiments, and patent application: The above and other objects and advantages of the present invention are described in detail below. A brief description of the month & pattern is to form a red LED element 为 1, which is a semi-conductor substrate of the base plate according to the above-mentioned schematic diagram of the cross-section structure. It is a cross-section of a conductor substrate according to the present invention. Bell ^ 6830

5. Description of the invention (5) A buffer layer is formed above the substrate, and red and green LED elements are formed thereon, and then an isolation layer is covered. Fig. 3 shows a new substrate according to the present invention bonded above an isolation layer. -Figure 4 illustrates the new substrate shown in Figure 3, which has been polished to a thin substrate layer by chemical mechanical polishing techniques. FIG. 5 illustrates the formation of a blue LED element above the new substrate shown in FIG. 3 '. The new substrate layer above the red and green LED elements is removed. Fig. 6 shows an isolation layer according to the present invention to cover the entire semiconductor structure 'including red, green and blue LED elements. ΰ: 7 i Erming A brief top view of a full-color LED display. This full-color / display arranges several full-color LED devices in a matrix form. Brother Ming Another embodiment of the present invention First, the blue, green element is formed on the first substrate, and then a new substrate is combined to form the red and green LED elements.

486830 V. Description of the invention (6) 101 semiconductor substrate 102 buffer layer 103 P-type cover layer 104 active layer 105 N-type cover layer 201 green LED element 202 first partition 301 second semiconductor substrate layer 401 thin substrate layer 501 blue Detailed description of the invention of the second isolation layer of the LED element 601 The present invention overcomes the difficulty of forming LEDs of different colors on the same substrate, and covers a LED element of one color with a new substrate to form LED elements of different colors. Referring to FIG. 1, a schematic cross-sectional structure of a red LED element formed on a first substrate is shown. The example of FIG. 1 illustrates that a red LED element is formed on a semiconductor substrate 101 such as gallium arsenide (GaAs), gallium phosphide (GaP), or indium phosphide (inp). First, a buffer layer 0 0 2 is formed over the first substrate. Then, an LED structure is fabricated on the buffer layer. This LED structure can be based on a heterostructure. This dual structure has a main

486830

V. Description of the invention (7) The movable layer 104 is located between a P-type cover layer and an N-type cover layer 105, as shown in FIG. For the formation of LED elements, indium phosphide can be used as the material of the buffer layer. In this example, since the first semiconductor substrate can also be used to manufacture green LED elements, FIG. 2 illustrates that after the red LED element is manufactured, the green LED element 201 is manufactured next to the red LED element. After that, a first isolation layer 202 is covered over the two LED elements located above the first substrate. The first isolation layer is made of a material such as silicon nitride (SiN). As described in the background of the present invention, blue LED elements cannot be fabricated on the same substrate containing gallium arsenide, gallium arsenide, or indium. Blue L £ d components need to be grown on a different semiconductor substrate. Referring to FIG. 3, a second semiconductor substrate layer 301 is bonded on the first isolation layer. A preferred technology for incorporating this second semiconductor substrate is wafer bonding technology. The second substrate may include sapphire or silicon carbide (Sic) suitable for generating blue LED elements. As shown in Fig. 4, the second substrate is polished by chemical mechanical polishing technology to form a thin substrate layer 401. The thin substrate layer preferably has a thickness of less than 1 a m. Then, a thin film layer (f i lm layer) is implanted on the new substrate to form a blue LED element 50 1, as shown in FIG. 5. It is worth noting that the first substrate layer above the red and green LED elements is removed. Only the blue LED structure is left above the second substrate layer. Finally, a second isolation layer covering the entire semiconductor structure is used, including the first substrate layer and the buffer layer.

Page 10 486830

5. Description of the invention, the first isolation layer, the second substrate and the blue LED element. A cross-sectional view of this full-color led pen " 'device is shown in FIG. 6. The red, green and blue LED structures overlap each other ^ *. In practice, the second substrate layer above the red and green LED elements can be removed or not removed. In order to form a full-color LED display, several full-color LED devices are arranged in a matrix form, and each LED device is addressed and controlled with appropriate metal wires-and electrode layers and peripheral circuits. . The peripheral circuits of the present invention can be fabricated using techniques similar to those used to make active or passive LED displays. Since each full-color LED device has its own red money, green, and blue LED elements, the brightness of each LED element can be measured by the pixel system of the full-color display. Consisting of full-color LED devices, 'full-color displays can display full-color images. A brief top view of this full-color LED display. ° pieces, as shown in Figure 2. Bran Housha immersed in bismuth without duo… dumb, a new substrate to make a blue LED-Ruzhi gem and ΐ1: to form on the same-substrate

The color LED and monitor color LED components, Tie Deren, m soil y Ά;…, combined with a new arsenic fluttering i k, red LED elements. Iridium iridium substrate M is possible in the order of the elements-blue is formed on the substrate

Generally speaking, red, green and blue LEDs are even better. For example, as shown in Fig. 8, it can be preceded on page 11 486830 5. Invention Description (9) The color LED element is combined with a new substrate to form a red LED. Alternatively, a red substrate may be formed on the first substrate, and the scholar 70 may form a new substrate to form green and blue LED components. In practice, the combination of red and green LED elements can be formed on the same substrate. ^ The dead-light LED elements can also be formed on the same substrate. However, red LE = is not easily formed on the same substrate. Based on the above-the LED element can also be formed on three combined substrates 2 respectively, and this method will add more steps :, y 7% steps, and lose its economic value. The above-mentioned XT L are merely preferred embodiments of the present invention, and they do not limit the average f ^ of every 4 ^ ^ range of the present invention, that is, within the scope of the application for the present invention. . 4. Crossing and modification should still be covered by the patent of the present invention

486830 Schematic Description Page 13

Claims (1)

1. A full-color light-emitting diode device comprising: a first semiconductor substrate; a buffer layer covering the first semiconductor substrate; and a color material light-emitting diode and a first isolation layer formed on the buffer layer, The first isolation layer covers the light emitting diode elements of the first and second colors and the buffer layer; the second = semiconductor substrate is formed on the first isolation layer; A light emitting diode element of a third color formed on the second semiconductor substrate; and a first isolation layer covering the first semiconductor substrate, the buffer layer, the first isolation layer, and the second semiconductor substrate And the third color light-emitting polar element. 2. The full-color light-emitting diode device as described in item 1 of the Shen-Jin patent scope, wherein 'the first semiconductor substrate and the first and second light-emitting diode elements do not overlap. 3. The full-color light-emitting diode device according to item 1 of the scope of the patent application, wherein 'the thickness of the second semiconductor substrate is less than lem. 4 'The full-color light-emitting diode device as described in item 1 of the Shenjing patent scope, wherein' the first semiconductor substrate includes gallium halide, disk gallium or phosphide steel 'and the first and second The color of the light-emitting diode element is red and Page 14 486830 Green light emitting diode element. 5. The full-color light-emitting diode device described in item 1 of the patent claim, wherein the first semiconductor substrate includes sapphire or silicon carbide, and the light-emitting diode elements of the first and second colors are blue. And green light emitting diode element. Appreciation 6. Kinds of full-color light-emitting diode displays, comprising a plurality of full-color light-emitting diode devices as described in item 1 of the scope of the patent application, and the plurality of full-color light-emitting diodes The devices are arranged in a determinant matrix. A full-color light-emitting diode device includes: a first semiconductor substrate; a buffer layer covering the first semiconductor substrate; a first-color light-emitting diode element formed on the buffer layer; a first An isolation layer covering the light emitting diode element of the first color and the buffer layer; a second semiconductor substrate formed on the first isolation layer; a second and a second semiconductor substrate formed on the second semiconductor substrate A three-color light-emitting diode element; and a second isolation layer covering the first semiconductor substrate, the buffer layer, the first isolation layer, the second semiconductor substrate, and the second and third-color light-emitting diodes Above the polar body element. Page 15 Scope of patent application • The full-color light-emitting diode device described in item 7 of the scope of patent application, wherein ‘the first semiconductor substrate and the first and second light-emitting diode elements do not overlap. 9. The full-color light-emitting diode device according to item 7 of the scope of the patent application, wherein 'the thickness of the second semiconductor substrate is less than lem. 10. The full-color light-emitting diode device as described in item 7 of the scope of the patent application ^ wherein 'the first semiconductor substrate contains deified gallium, gallium-filled gallium or scaled marriage', and the first-color light-emitting diode The element is a red light emitting diode element. 11 · The full-color light-emitting diode device described in item 7 of the scope of patent application / wherein 'the first semiconductor substrate includes sapphire or silicon carbide, and the light-emitting diode element of the first color is a blue light-emitting diode Polar body element. This kind of king colorization light emitting diode display is characterized in that it includes a plurality of = full colorization light emitting diode devices as described in item 7 of the declared patent range. The plurality of full colorization light emitting diode devices are arranged in an array. 13. Moment 13. A method for manufacturing a full-color light-emitting diode device, including the following steps Sixteenth, the scope of patent application: preparing a first semiconductor substrate; forming a buffer layer covering the first semiconductor substrate; manufacturing a light emitting diode element of a first color on the buffer layer; Making a second color light emitting diode element on the buffer layer; opening> forming a first isolation layer to cover the first and second color light emitting diode elements and the buffer layer; combining a first Two semiconductor substrates above the first isolation layer; polishing the second semiconductor substrate into a thin / thin second substrate layer; Manufacture a third color light emitting diode element over the thin second substrate layer; and · cover the first semiconductor substrate, the buffer layer, the first isolation layer, the thin layer with a second isolation layer On the second substrate layer and the light emitting diode element of the third color. 14. The method for manufacturing a full-color light-emitting diode device according to item 13 of the scope of the patent application, wherein the / semiconductor substrate and the first and second light-emitting diode elements do not overlap. 15. The method for manufacturing a full-color light-emitting diode device according to item 13 of the scope of the patent application, wherein the thickness of the substrate layer is less than lem. 16. Manufacture Wang Caihua light emitting monopole as described in item 13 of the scope of patent application 486830 6. Scope of patent application Gallium phosphide or indium phosphide, and the light emitting diode elements of the first and second colors are red and green light emitting diode elements. 17. The method for manufacturing a full-color light-emitting diode device according to item 13 of the scope of the patent application, wherein the first semiconductor substrate includes sapphire or silicon carbide, and the first- and second-color light-emitting diode elements It is a blue and green light emitting diode element. 18. · A method for manufacturing a full-color light-emitting diode device, comprising the following steps: preparing-forming-manufacturing-forming a first semiconductor substrate; on a semiconductor substrate; a component on the buffer layer; The second substrate layer on the diode-isolation layer; the component on the thin second substrate; the component on the thin second substrate semiconductor substrate; the buffer layer substrate layer; and the second and third buffer layers, covering A first isolation layer of the light emitting diode of the first first color to cover the element and the buffer layer; a polishing and manufacturing a second semiconductor substrate to the second semiconductor substrate to form a thin second color light emission Over the diode layer; manufacturing a third-color light-emitting diode layer; and covering the first, the first isolation layer, and the thin second-color light-emitting diode element with a second isolation layer Above. Page 18 486830 VI. Application for Patent Scope 19. The method for making this Wang Caihua light emitting diode device as described in Item 18 of the scope of patent application, wherein the first, the semiconductor substrate and the first and second light emitting diodes Body elements do not overlap. 20. The method for manufacturing a Wang Caihua light-emitting diode device as described in item I of the patent application scope, wherein the thickness of the second substrate layer is less than 1 / zm. 21. The method for manufacturing a Wang Caihua light-emitting diode device as described in the first patent application, wherein the first semiconductor substrate includes gallium arsenide, gallium phosphide, or indium phosphide, and the light-emitting diode of the first color The polar element is a red light emitting diode element. 22. The method for manufacturing a full-color light-emitting diode device as described in item 18 of the scope of patent application, wherein the first semiconductor substrate includes sapphire or silicon carbide, and the light-emitting diode element of the first color is blue Light-emitting diode element. Page 19