486746 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 B7 五、發明說明（/ ) 發明背景： 發明技術領域： 本發明係有_-種在-铸體裝置上形成金屬線路的 方法’尤指-種藉由化學氣相沈積（CVD)製程方法而 良銅之黏著特性之在-半導觀置上形成金屬線路的方法。 習知先前技藝之說明： 通常’在-半導體裝置上形成金屬線財，銅薄膜的炫 點高於銘薄膜的溶點。由於銅薄膜較耐電致遷移 (electro-migration, EM) ’所以半_裝置的可靠度可被辦 加。再者’由於銅薄膜的電阻率低至約17…咖，所以^ 遞速=可被增加。因此，對於高速率裝置及更高聚集度的裝 置而5，开>成銅薄膜的技術為—種重要的技術。 由於夂世代的半導體裝置趨向於更高的性能，所以基於 接觸尺寸的縮減以及縱橫比的增加，良好的階梯覆蓋及良好 的接，鎮埋為所需。目前的趨勢為使用一種在鈦薄膜被沈積 之後藉由物理氣相沈積（PVD)與化學氣相沈積（⑽）法 之沈積銘膜的方法’以及一種使用以物理氣相沈積法所沈積 氮化组作為抗銅擴散膜之藉由電鍍法沈積銅的方法。 2而’、在前者的狀況中’由於㉝細的電阻率高於銅薄膜的 7阻率’所以存在闕題為其細於更高性能的半導體裝置 寺I再者，在後者的狀況中，所存在的問題為基於接觸尺寸 遽縮減以及縱橫比的增加，在使用電鍍方法的銅沈積上 斤限制。因此’使用電鍍將鋁線路及銅線路施加於次世代 ---------------Μ-----------------Μ (請先閱讀背面之注意事項再填寫本頁)486746 Printed by A7 B7, Consumer Cooperative of Employees of Intellectual Property Bureau, Ministry of Economics 5. Description of the invention (/) Background of the invention: Field of the invention: The present invention has _-a method for forming a metal circuit on a cast body device, especially-a method A method for forming a metal circuit on a semi-conducting device by using a chemical vapor deposition (CVD) process method to improve the adhesion characteristics of good copper. Description of the prior art: Generally, the metal film is formed on a semiconductor device, and the dazzling point of the copper film is higher than the melting point of the film. Since the copper film is more resistant to electro-migration (EM), the reliability of the semi-device can be increased. Furthermore, since the resistivity of the copper thin film is as low as about 17 ... ca, the speed of ^ = can be increased. Therefore, for high-speed devices and devices with a higher degree of aggregation, the technology for forming copper films is an important technology. Since semiconductor devices of the next generation tend to have higher performance, based on the reduction in contact size and the increase in aspect ratio, good step coverage and good connection, buried is required. The current trend is to use a method of depositing a thin film by physical vapor deposition (PVD) and chemical vapor deposition (⑽) after the titanium thin film is deposited, and a method of depositing nitride by physical vapor deposition. A method for depositing copper by electroplating as an anti-copper diffusion film. 2 ”In the former situation,“ Since the thin resistivity is higher than the 7 resistivity of the copper thin film ”, there is a problem that it is finer than a higher-performance semiconductor device. Furthermore, in the latter situation, The problem is that based on the reduction in contact size and the increase in aspect ratio, there are limitations on copper deposition using electroplating methods. Therefore, 'plating is used to apply aluminum and copper circuits to the next generation --------------- M ----------------- M (Please (Read the notes on the back before filling out this page)
486746 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（> ) 的半導體裝置中係存在著諸多問題。 、再者，在以化學氣相沈積法將銅鑲埋於超細線路結構中 ^况下藉由化學氣相沈積法一直以來最大的問題為黏著 該薄膜。若黏著性極微弱，則其將在後續的製程中造成明顯 的門喊，而使彳于銅金屬線路不佳。因此，為將以化學氣相沈 積法所形成的__施加於—半導體裝置_，黏著性的^ ，必須被改良。通常，在_被軸前，諸她、氮化叙及 亂化鈦等材料被使用於形成—個阻障金屬層。此時，黏 的問題亦變為一個大問題。 、用於改良銅層黏著性問題的各種方法已被提出。這些方 下所示首先，第一個方法為在一個銅層以化學氣相沈 積开/成後在3〇〇〜45〇C的溫度進行一道熱製程。然而， 雖然該方法可降低界面雜質，惟其具有產能的問題。再者， 在使用低介電常數介電質的狀況中，其將有聚集度的問題。 因此，該第—個方法H縣最適化的解財法。其次，第 二個方法為在_以化學餘沈積法沈積前，附加1錄著 為新開發預製體的方法。然而，這些方法亦不能成 近來，所提出之解決方法為，藉由化學氣相 =積法沈積-個鋼層’以物理氣相沈積法形成—個銅種子 曰以及以化學氣相沈積法开i成-個銅層。 發明簡要說明： 因此’本發明之_目的在於提供— 形成金屬線路的方法，其可藉由僅以化學氣相 本紙張尺度適用中國國家標準（CNS)A4規格（21Q x 297公爱） -----*-----------------^--------- (請先閱讀背面之注意事項再填寫本頁) A7 五、發明說明（ 的—個2層而改良銅的黏著特性。 由入t成上述目的’根據本發明之—種在半導體裝置中形 人方法’其特徵在於所包含的步驟有：形成—個 Η^二=於—基層被形成於其上的基板上；形成一個鑲埋 介層絕緣膜上，以及接著進行—道清洗製程；沿著 ^ 3二，、圖案之該介層絕緣膜表面，形成一個阻障金屬 二雜：s迢電漿巧程’而將形成於該阻障金屬層表面上的 埋图牵镱Γ移除’藉由以化學氣相沈積法所職的銅將該鑲 ’而形成—個銅層；以及進行-道氫氣還原熱製 t該靖’並接_卜道辨機觀絲職銅金屬線 圖式之簡要說明： 列月述特性及其他特徵將配合附圖而被說明於τ 列祝明中，其中： -猶圖係為用於說明根據本發明之較佳實施例之 種在-半¥體裝置中形成金屬線路的方法。 l·---!||||1 — — —· · I I I I I I I 訂 — 11!! 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 圖號說明： 12-基層 14-鑲埋圖案 16-界面雜質層 i3_介層絕緣膜 15-阻障金屬層 17-銅層 4 五、發明說明（4) 較佳實施例之詳細說明·· 本發魏將細參相_較佳實施例喊詳細說明， /、將相似畔考數字被使用於代表__似的部分。 第ία至m圖係為用於說明根據本發明之較佳實施例之 -種在-半導體裝置中形成金屬線路的方法。 =參考第认圖，一基層12被形成於一基板（用於形 成半導體裝置的各種組件被形成於其中）上。在一介層絕 緣膜13被形成於包含該基層u的整個結構上以後，-^由 介層鋪孔及溝渠驗成的__ 14細鑲麵刻製程 2槪/成〃 a在進行_清洗製程後，沿著包含該镶埋圖 ” 14之該"層纟B緣膜13表面，形成—個阻障金屬層此 時’基於製程上及外在的因素，—個由諸如氧化物、氮化物 ^質所組成的界面雜質層16被形成於該轉金屬層化表 經濟部智慧財產局員工消費合作社印製 在上述中’基層12為具有一個多晶石夕結構、一個多晶石夕 化物結構及-個金屬結構（諸如嫣、紹、銅等）的導電性圖 案。該介層絕緣層13使用具有低介電常數的介電材料所形 成。在該鑲糊案14形成後所進行的清洗製程可使用射頻電 漿^在基層12為諸如鎮、銘等金屬時），並可使用活性清洗 製程（在基層12為鋼時）。該阻障金屬層15係以離子化物理 氣相沈積氮化鈦膜、化學氣相沈魏倾膜、金屬有機化學 氣相，積氮化鈦膜、離子化物理氣相沈積组、離子化氣化纽、 化學氣相沈雜、化學氣相沈魏她及化學氣相沈積氮化 鑛膜之任何-種所形成。已知地是，當該靖以化學氣相沈 本紙張尺度綱中國國家標準（CNS)A4g^ 297公釐） 五 經濟部智慧財產局員工消費合作社印製 A7 B7 發明說明（f) 積法形成時，該界面雜質 現在夂老莖m 將化銅層的黏著性。 賴時，二：圖’為在銅層以後序的化學氣相沈積法 ㈣移除 著特性，該界峰魏16係以電漿 ::述：’該電漿加工方法可使用遠程電漿加工法、腔 二以及—種同時進行遠程電漿加卫與腔室電聚 加工的方法。其條件如下： 首先’遠程電漿加工法，條件為進行1〇秒至1〇分鐘， 5^至·瓦範圍喻爾裤，使㈣氣體錢氣、氮氣、 =及氦氣中之至少一種且其流速被維持在50至500 seem 的fc圍中’該晶圓的溫度被轉在15〇至3耽的範圍中， 該晶圓與喷頭間的距離為20至5〇職，以及該腔室的壓力為 0.3至2托耳。 在使用混合氣體作為所使用之氣體的狀況中，該遠程電 聚加工方法包含使用5至95〇/〇氬氣及5至95%氫氣的麟方 法。 同時，該遠程電漿加工法可使用一單獨步驟及多重步 驟。在使用單獨步驟的狀況中，其可使用一翔氣體或一混 合氣體。在使用多重步驟的狀況中，其可重複該製程，藉此 一單獨氬氣或一混合氣體被使用，而氫氣接著被使用，工至 10次。 第二，腔室電漿加工法，條件為進行10秒至1〇分鐘， 50至700瓦範圍的腔室電漿功率，使用的氣體為氫氣、氮氣、 鼠氣及乱氣中之至少一種且其流速被維持在50至500 seen* 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） 486746 經濟部智慧財產局員工消費合作社印製 A7 -----— B7 _—___ 五、發明說明（(） 的範圍中，该晶圓的溫度被維持在15〇至35〇。〇的範 該晶圓與喷頭間的距離為20 S 5〇咖，以及該腔室 0.3至2托耳。 7冷 在使用混合氣體作為所使用之氣體雜況中，該腔室電 漿加工方法包含使用5至95%氬氣及5至95%氫氣的濺鑛二 法。 第二，同時進行遠程電漿加工與腔室電漿加工的方法首 先進行腔室電漿加工，並接著進行遠程電漿加工，其中一單 獨步驟及多重步驟皆可被使用。此時，該遠程電聚加工與腔 室電漿加工的個別條件同上述之各電漿加工。 現在參考第1C圖’在該界_簡10以賴製程移除 後，藉由以化學氣相沈積法所形成的銅將該鑲埋圖案14鑲 埋，而形成一個銅層17。 在上述中，銅鑲埋可使用直接液態注入（dli)、cem以 及使用諸如 _c)Cu(VTM0S)系列、（hfac)Cu(TMvs)系列、 系狀所有銅雜體_之所有的銳孔型與 喷灑型⑧發。所有的。銅係以金屬有機化學氣相沈積 (MOCVD)法沈積。 金屬有機化學氣相沈積法的條件如下：銅預製體被維持 ，Ο.? 5.0 _的流速，傳輸氣體係使用氫氣、氮氣、氬 氣及氦氣中之至少—種且其流速被轉在5Q至5〇〇 seem 的 範圍中、反應腔至的溫度被維持與汽化器相同，喷頭的溫度 被維持為疋值，沈積溫度被維持在15〇至·。c的範圍中， 該感受器與噴頭間的距離為％至s〇mm，以及該腔室的壓力 f紙張尺度適时關雜準（CNS)A4規格⑽χ撕公&--- 1* 2. Μ--------訂---------^ (請先閱讀背面之注意事項再填寫本頁) 486746 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（^ y 為〇·5至5托耳之間。 、y見在參考第1D圖，在銅層以氫氣還原熱製程加工後 =于=化學機械拋光及—道後清洗，因而形成銅略 170於鑲埋圖案14中。 ^展略 在上述中，該氫氣還原熱製程為改變銅 貌的盤弟？，甘丄丄 日日粒表面形 緣其係猎由在室溫至45(TC範圍於氫氣中進行i八 f!\3小時的錄程’射域氣可使輯錢或諸如氫^ （0至95%)、氫氣加氮氣（0至95%)等氫氣混合氣 本發明之上述實施例係《於-種當鋼被鑲埋於超細線 構（銅難崎由物魏減積或電銳被馳於其中> 中時’在銅以化學氣相沈積法沈積前，將阻障金屬層表面上 的界面雜質層移除的電漿製程，以便改良在—單獨彳:學氣相 沈積腔室中之銅層的黏著特性。 -由上述说明可瞭解，本發明在銅被鑲埋於超細線路結構 (銅難以藉由物理氣相沈積或電鍍法被鑲埋於其中）中時， 改良銅層的黏著特性。因此，其可省略以慣用之物理氣相沈 積法形成-個銅種子層製程，並可藉由僅以化學氣相沈積法 形成銅金屬線路而將製程簡化。 本發明已參考配合特定應用的一特定實施例做說明。具 有本技藝中之一般技術並獲得本發明之教導的人士將瞭解落 於其範疇中的其他改良與應用。 因此，所附申請專利範圍希冀涵蓋落於本發明之範疇中 的所有該應用、改良及實施例。 本紙張尺度顧巾國國家標準（CNS)A4規格（210 X 297公髮- 11 » 裝--------訂---------線 (請先閱讀背面之注咅P事項再填寫本頁)486746 Printed by the Consumer Property Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 5. There are many problems in the semiconductor device of the invention description (>). Moreover, in the case of embedding copper in an ultra-fine circuit structure by a chemical vapor deposition method, the biggest problem by the chemical vapor deposition method has always been adhesion to the film. If the adhesion is very weak, it will cause obvious door shouts in the subsequent processes, and make the copper metal line poor. Therefore, in order to apply __ formed to a semiconductor device by a chemical vapor deposition method, the adhesion ^ must be improved. Usually, in front of the shaft, materials such as titanium, nitride and titanium are used to form a barrier metal layer. At this time, the problem of stickiness also became a big problem. Various methods have been proposed for improving the adhesion of copper layers. These are shown below. First, the first method is to perform a thermal process at a temperature of 300 ~ 45 ° C after a copper layer is deposited / formed by chemical vapor deposition. However, although this method can reduce interfacial impurities, it has the problem of productivity. Furthermore, in the case of using a low-dielectric constant dielectric substance, there is a problem of the degree of aggregation. Therefore, the first method H county's optimal financial solution method. Secondly, the second method is a method for newly developing a preform before deposition by chemical co-deposition. However, these methods can not be achieved recently. The proposed solution is to deposit by chemical vapor deposition—a steel layer 'by physical vapor deposition—a copper seed and by chemical vapor deposition. i into a copper layer. Brief description of the invention: "The purpose of the present invention is to provide-a method for forming a metal circuit, which can apply the Chinese National Standard (CNS) A4 specification (21Q x 297 public love) only in the chemical vapor phase of this paper scale-- -* ----------------- ^ --------- (Please read the notes on the back before filling this page) A7 V. Description of the invention ( -A two-layer to improve the adhesion characteristics of copper. From the above, the above purpose is achieved according to the present invention "a method for forming a person in a semiconductor device", which is characterized in that the steps involved are: forming-one ^^ ==- The base layer is formed on the substrate thereon; a buried interlayer insulating film is formed, and then a cleaning process is performed; along the surface of the insulating film of the pattern, a barrier metal II is formed Miscellaneous: Plasma is used to remove the buried pattern formed on the surface of the barrier metal layer. Γ is removed and formed by copper that is used by chemical vapor deposition. Layer; and the hydrogen-reduction thermal process of the channel, the Jing 'parallel connection _ ________________________________________________ The characteristics and other characteristics will be described in the τ column Zhuming with the accompanying drawings, in which:-the figure is for explaining a method for forming a metal circuit in a -half body device according to a preferred embodiment of the present invention. L · ---! |||| 1 — — — · · IIIIIII Order — 11 !! (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs: 12 -Base layer 14-Embedded pattern 16-Interfacial impurity layer i3_ Interlayer insulating film 15-Barrier metal layer 17-Copper layer 4 5. Description of the invention (4) Detailed description of the preferred embodiment Refer to the detailed description of the preferred embodiment, and / or use similar figures to represent similar parts. Figures α to m are for explaining the preferred embodiment according to the present invention. -A method of forming a metal circuit in a semiconductor device. = With reference to the drawings, a base layer 12 is formed on a substrate (in which various components for forming a semiconductor device are formed). A dielectric insulating film 13 is formed including After the entire structure of the base layer u,-^ After the __ 14 fine veneer engraving process 2 槪 / 成 验 a After the _ cleaning process, along the surface of the "" layer 纟 B edge film 13 containing the embedded pattern" 14, a resistance is formed At this time, the barrier metal layer is based on process and external factors. An interfacial impurity layer 16 composed of materials such as oxides and nitrides is formed in the metallization layer. The above-mentioned 'base layer 12 is a conductive pattern having a polycrystalline structure, a polycrystalline structure, and a metal structure (such as Yan, Shao, copper, etc.). The interlayer insulating layer 13 is used Formed from a dielectric material having a low dielectric constant. The cleaning process performed after the formation of the paste 14 can use RF plasma ^ when the base layer 12 is a metal such as a town, a Ming, etc., and an active cleaning process can be used (when the base layer 12 is steel). The barrier metal layer 15 is an ionized physical vapor deposition titanium nitride film, a chemical vapor deposition film, a metal organic chemical vapor phase, a deposited titanium nitride film, an ionized physical vapor deposition group, and an ionized gas. Formed by any of the following: chemical bonds, chemical vapor deposition, chemical vapor deposition, and chemical vapor deposition of nitride ore films. It is known that when the Jing used the chemical vapor deposition paper standard Chinese National Standard (CNS) A4g ^ 297 mm), the A5 B7 printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (f) the product method formed At this time, the impurities at this interface will now reduce the adhesion of the copper layer to the old stem m. Lai Shi, II: The picture shows the chemical vapor deposition method following the copper layer. The characteristics are removed by the plasma of the Weifeng 16 series. The plasma processing method can use remote plasma processing. Method, cavity two, and a method for simultaneously performing remote plasma guarding and cavity electropolymerization processing. The conditions are as follows: First, the "remote plasma processing method" is performed for 10 seconds to 10 minutes, and the range is from 5 to watts, and at least one of gas, nitrogen, and helium is used, and The flow rate is maintained within the fc range of 50 to 500 seem. The temperature of the wafer is turned in the range of 15 to 3 delays. The distance between the wafer and the showerhead is 20 to 50 jobs, and the cavity The pressure in the chamber is 0.3 to 2 Torr. In the case where a mixed gas is used as the gas to be used, the remote electropolymerization processing method includes a lin method using 5 to 95/100 argon and 5 to 95% hydrogen. At the same time, the remote plasma processing method can use a single step and multiple steps. In the case of using a single step, it may use a flying gas or a mixed gas. In the case where multiple steps are used, the process can be repeated, whereby a single argon gas or a mixed gas is used, and hydrogen is then used up to 10 times. Second, the chamber plasma processing method is performed under the condition that the chamber plasma power is in the range of 10 seconds to 10 minutes and 50 to 700 watts, and the gas used is at least one of hydrogen, nitrogen, rat gas and turbulent gas, and Its flow rate is maintained at 50 to 500 seen * This paper size is in accordance with Chinese National Standard (CNS) A4 specifications (210 X 297 public love) 486746 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 -----— B7 _— ___ 5. In the scope of the invention description ((), the temperature of the wafer is maintained at 150-350 °. The distance between the wafer and the shower head is 20 S 50 °, and the chamber is 0.3. To 2 Torr. 7 In the use of mixed gas as the gas miscellaneous condition, the plasma processing method of the chamber includes two methods of ore splashing using 5 to 95% argon and 5 to 95% hydrogen. Second, The method of performing remote plasma processing and chamber plasma processing at the same time first performs cavity plasma processing, and then performs remote plasma processing, in which a single step and multiple steps can be used. At this time, the remote plasma processing The individual conditions for the plasma processing of the chamber are the same as those of the above-mentioned plasma processing. After referring to FIG. 1C 'removing the process in the world_Jane 10, the embedded pattern 14 is embedded by copper formed by chemical vapor deposition to form a copper layer 17. In the above, Copper embedding can use direct liquid injection (dli), cem, and use all types of sharp holes and sprays such as _c) Cu (VTM0S) series, (hfac) Cu (TMvs) series, all copper complexes Sprinkle the hair. all. Copper is deposited by metal organic chemical vapor deposition (MOCVD). The conditions of the metal organic chemical vapor deposition method are as follows: the copper preform is maintained, the flow rate of 5.0 is 5.0, and the transport gas system uses at least one of hydrogen, nitrogen, argon and helium and its flow rate is turned to 5Q In the range from 500 mm, the temperature of the reaction chamber is maintained the same as that of the vaporizer, the temperature of the shower head is maintained at a threshold value, and the deposition temperature is maintained at 150 °. In the range of c, the distance between the susceptor and the printhead is from% to s0mm, and the pressure of the chamber f paper size timely closing miscellaneous precision (CNS) A4 size ⑽χTear male & --- 1 * 2. Μ -------- Order --------- ^ (Please read the notes on the back before filling in this page) 486746 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 V. Invention Description ( ^ y is between 0.5 and 5 Torr., y See the reference figure 1D, after the copper layer is processed by the hydrogen reduction thermal process = = = chemical mechanical polishing and-after cleaning, thus forming copper slightly 170 inlay. Buried in pattern 14. ^ In the above, the hydrogen reduction thermal process is to change the appearance of the copper ?, the surface edge of the Gansu Rihi grain is hunted at room temperature to 45 (TC range in hydrogen) Performing an eight-hour recording of 3 hours' shooting range gas can make money or a hydrogen gas mixture such as hydrogen ^ (0 to 95%), hydrogen plus nitrogen (0 to 95%), and the like. "Yu-type when steel is embedded in ultra-fine wire structure (copper Nakazaki by Wu Wei deductive or electric sharp is chucked in it > '' before the copper is deposited by chemical vapor deposition, the barrier metal layer surface Plasma process for removing the interface impurity layer in order to improve the adhesion characteristics of the copper layer in a separate layer: learn the vapor deposition chamber.-As can be understood from the above description, the present invention embeds copper in ultra-fine lines When copper is difficult to be embedded in the structure by physical vapor deposition or electroplating, the adhesion characteristics of the copper layer are improved. Therefore, it can omit the formation of a copper seed layer by the conventional physical vapor deposition method, The process can be simplified by forming a copper metal circuit only by a chemical vapor deposition method. The present invention has been described with reference to a specific embodiment that matches a specific application. Those who have the general technology in the art and who have obtained the teachings of the present invention Other improvements and applications falling within its scope will be understood. Therefore, the scope of the attached patent application is intended to cover all such applications, improvements, and embodiments falling within the scope of the present invention. This paper is scaled to the National Standard (CNS) A4 specifications (210 X 297 public-11 »installed -------- order --------- line (please read the note on the back 咅 P before filling this page)