TW475183B - Material for transient over-voltage protection device - Google Patents

Abstract

The present invention relates to a kind of material for transient over-voltage protection device, in which at least more than two kinds of powder materials are uniformly mixed to form the invented material. One of the powder materials has P-N junction, in which the junction is also known as the non-linear resistance junction. The other is the conductor powder. By spreading the conductor powder in between the powder material with P-N junction, the total number of P-N junctions between both electrodes is relatively decreased so as to relatively lower the breakdown voltage of device.

Description

475183 V. Description of the invention G) | Background of the invention < Description of the first 4 techniques > The materials of conventional oxidative rheostats B, Bi, Ba, Si, Sr, pb, _ pF, and their structures are based on oxidative terms And | or a mixture of materials, oxidized, such as Wn, osmium, or equivalent oxide-grain boundary layer, the structure of this material requires zinc oxide particles to form a theoretical density structure, generally in principle; 2 2 The material density is made into a commercial product, but this component is more than 90%. It is a varistor with a high capacitance *, not suitable; :: This kind of material is made of a varistor #_ Item major Disadvantages of the circuit, this is the material of this piece 'is a powder loosely stacked heart n-state overcharge! The protection element material composition and the same components, so if the same is used and has a low flow, it is also scattered and stacked, and in the antenna. Therefore, this circuit suitable for high frequency 丨 The breakdown voltage of the right rheological resistor is related to the oxygen between the two electrodes. The existence of zinc oxide grains exists. Hafnium oxide,-generally called the M-rich zone layer; :: two; "is oxide E-· Another-difficult ... represents the P_N structure of the zinc oxide semiconductor Λ electrode-end to I resistor ¥ body m surface No narrative zone, so change

-N-P-N-P-E j: Φ μ into mm, where E is a conductor electrode, each

Vbl ’assumes that there are a total number of electrodes: interface = at r w P interface, the breakdown voltage Vb is available Page 4 / J 丄 OJ) 5. Description of the invention (2) It is described as the sum of Vbl. The previous invention is still in the application. Cai Tian described as having a P-N interface.

Type semiconductor coated P-type semiconductor; ^ t t L product material structure, if N pm & β & μ powder constituting the p-N interface as an example, 1 p, surface powder can be abbreviated PN powder with a PN powder, p table * p 70 = PN structure between the two electrodes can be expressed as the frequency semiconductor with N, so ^ t N p N ...... -PNPSPNPe: S can be air or S3 edge ^ \ The interval between the powder and the powder is shown, or the breakdown voltage between Λ exists as a result of the contact of the crystal Λ grains-the breakdown voltage; In the absence of S, the breakdown voltage Vb of each P_N_ρ component can indicate that the dry electricity is composed of extremely solid grains, so the overvoltage accompanied by 1_ in the past; and the sum of Vs. 4,726,99 1 published_70 pieces of material posture protection material, once covered at the end of the porphyrin 1-I insulation layer, after feeding, the material structure is a conductor or semiconductor powder Un handsome. ms); the thickness is less than a few hundred atomic diameter points. First, the insulation layer: thick = only f structure is practically available-some unmanufactured processes are extremely difficult. X wood = within several hundred atomic diameters, this Thickness control causes a short circuit of the component. Volume: Secret = When the thickness of the covered insulation layer is too thin, it is easy to compress. This is the use of insulation; Disadvantages of coating on the surface of conductors or semiconductor powders are also coated TT〇 materials, the material structure of which is 5,294,374

R, J. Concubine V. Description of the invention (3), ^ ^ body mixture, its coating thickness is between 70 atomic diameter and 1 micron I insulation Ϊ = Γ to use semiconductors, basically, these materials are used, θ 枓 or abundant conductor materials block the passage of current, and the thickness of the t-coat layer to achieve high resistance will directly affect the breakdown voltage of the device, because the uniformity of | is very important.度 度 | Variable resistance material containing right = species bulk powder, semiconductor powder or non-conductor powder uniformly mixed with d: material, has been published in the United States | 4 '/, patent numbers are 3,685,026, 3 685 028 , 596 and si :;: = 8,634, 5,26. , 848, 5,294,374, 5,393, H of the resistance, the structure of these materials powder itself is not non-linear 丨 with the content described in the invention, the material of the present invention is novel and practical. The explanation material of the invention of the boat I is because the present invention aims to provide a kind of transient overvoltage protection element II: R material, but mixed; ::: When: Adhesive, make these powders loosely pile two jf, so the total amount of P_N interface between the electrodes constitutes thus reducing the breakdown of the device. The existence of the body and the reduction of the transient over-electric protection element made in the multi-m system, can be used commercially [-species-piece structure; please refer to the first figure, which is the present invention

The actual poles 22 and 24 of the element structure form a gap between the poles, and then there is a kind of element voltage guarantee material 30, which is a material, that is, an example, with a gap 28 on the substrate. . Please refer to the other main body of the structure. After sintering, another is formed under the material. Another transient overcurrent, description of the invention. (4) Transient overvoltage protection body 'First put the conductor level surface and electricity 2 6 into this The Qin San structure in the gap can obtain another feasible and feasible transient powder material of the present invention to form the electrode 34, the elementary insulating substrate 20 of the Meiji structure is mainly used, and the two conductor electrodes are the same as the powder of the present invention. The bulk material makes the powder material pile up as shown in the second figure, which is an embodiment of the present invention. It is still formed by forming a block and the electrode 32 on the material. The voltage protection element structure formed is as far as the detailed structure, application principle of the present invention, ... The description given in the accompanying drawings can be fully understood. Let's use <One of the specific embodiments> Exhaust diagram: Zinc = microstructure of the powder material of the invention, a type semiconductor, whose composition can contain B and Bi, which is a B_ 夂 conductor, and the coating layer 42 is p Mn, Sb Or Cr and other oxides or i% human 1 Sr, Pb, Pr,

The material is referred to as bismuth oxide-containing powder, and this coating is ::: constitutes the interface of this coating layer, which is the second one with high resistance ^, a P ~ N is formed between zinc compounds, showing a high resistance condition. ; When the wave working electricity reaches the PN interface and the thunderbolt B master-slave appears, the voltage increases rapidly, and the resistance of the material is only between several Ω _ ″, allowing the instantaneous collapse. At this time, the material allows a large current to pass, and The surge energy 475183 _ Case No. 90101338 V. Description of the invention (6) Date

(Pt), gold (Au), nickel (Ni), copper (cu), tungsten (W),) 丄 £), iron (Fe), zinc (Zn), titanium (Ti), niobium (Nb), Alloy powder of molybdenum (Mo), ^ 7 ^ u), such as (Pb), erbium (Ir) powder. Please refer to the fourth figure, which is a schematic flow chart of the method for manufacturing a transient overvoltage protection material according to the present invention. The description of each step is as follows: $ 1,2: uniformly mixing the oxide powder and the bismuth oxide-containing powder, of which, The oxidation term is relatively N-type powder, and its applicable average particle size is between &gt;, 0 · 0 1 -1 0 0 // m, especially with an average particle size between 0 · b j 〇〇vm, The size of the particles will affect the amount of powder between the electrodes, so it directly affects the breakdown voltage of the component. The weight percentage is preferably between 50-97%. The powder containing bismuth oxide is relatively P-type powder. The weight percentage is preferably from 3 to 50%. Step 3: The process of calcining the mixed powder of steps 1,2 at a temperature of 8000 to 6,000 t, the powder containing bismuth oxide will form a liquid phase at a high temperature, and it will be covered with zinc oxide powder. On the surface of the body, a bulk interface between the coating layer and zinc oxide is formed. This interface is a PN interface or a non-linear resistance interface, and it can also be called a Schottky Barrier. Step 4: The material obtained in step 3 is ground to form a powder, and the powder still retains the characteristics of the PN interface. Step 5 ·· The powder material obtained in step 4 is added with a conventional binding agent or solvent and conductive powder, a conventional binding agent such as a polymer such as ethyl cellulose, and a solvent such as an organic alcohol or an organic ester. After uniform mixing, a paste-like material state is obtained. &lt; Specific implementation example 2 &gt;

Page 9 2001 · 12 · 03 · 009 V. Description of the invention (7) Discharge electric current The reaction curve of electrostatic discharge of this invention, curve 1 is shown in the electrostatic chart, = 70 pieces of reaction curve, the source of static electricity is 8kV. "A lot of electricity": It is obvious that the condition of the material after the collapse. At this time, the lightning H shown in line 2 passes the element, and the maximum passing current is greater than 30A. For example, if the voltage is below 300 volts, the peak voltage (Peak voltage) is only in the component, that is, when an 8kV static electricity occurs, the voltage of the component passing through the present invention is reduced to 300. Below V, it is possible to achieve protection of electrons. The overvoltage protection material of the present invention is provided with overvoltage of the overvoltage protection material ;;: The structure of this overvoltage protection material is changed, and It has the advantages of stable manufacture and low leakage current: small, and indeed meets the requirements of patents. Therefore, Chen Mingzhe's above is the preferred and specific embodiment of the present invention. The changes made according to the concept of this creation, and the resulting functional effects are still beyond the spirit covered by the description and illustrations. Within the scope of the present invention, Chen Ming is here. Comparison of component names and symbols in the drawings 20 22 24 26 28: Φ Insulating substrate Conductor electrode Conductor electrode Overvoltage protection material Electrode spacing

Page 10 475183 V. Description of the invention (8) 30 Overvoltage protection material 32 Conductor electrode 34 Conductor electrode 40 Zinc oxide 42 Coating mixture of bismuth oxide A Zinc oxide powder B Zinc oxide powder C Zinc oxide powder D Space E Conductor powder #

475183 Brief description of the drawings. Figure 1 is an embodiment of a structure of a feasible transient overvoltage protection element of the present invention. Figure 2 is another embodiment of a structure of a feasible transient overvoltage protection element of the present invention. Figure 3 is a powder of the present invention. The microstructure of the bulk material. Figure 4 is a schematic flow chart of the manufacturing method of the transient overvoltage protection material of the present invention. Figure 5 is a reaction curve of the electrostatic discharge of the present invention.

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Claims (1)

475183 6. Scope of patent application The non-metal powder is graphite powder. 9. As the material of the transient overvoltage protection element described in item 3 of the scope of the patent application, the non-metal powder may be a carbide of tungsten carbide (WC), titanium carbide (TiC), or niobium carbide (NbC), etc.物 粉体。 Powder. Page 14