TW475060B - Method and device for measuring ion density in liquid crystal panel - Google Patents
Method and device for measuring ion density in liquid crystal panel Download PDFInfo
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- TW475060B TW475060B TW089106204A TW89106204A TW475060B TW 475060 B TW475060 B TW 475060B TW 089106204 A TW089106204 A TW 089106204A TW 89106204 A TW89106204 A TW 89106204A TW 475060 B TW475060 B TW 475060B
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
- G01N21/5907—Densitometers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/59—Transmissivity
- G01N21/5907—Densitometers
- G01N2021/5957—Densitometers using an image detector type detector, e.g. CCD
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Abstract
Description
475060 五、發明說明(1) 發明所屬技術領域 本發明係有關於量測液晶顯示面板内之雜質離子之密 度(濃度)之方法及其裝置,尤其係有關於以非破壞量測液 晶之離子密度之方法及其裝置。 習知技術 因向列液晶顯示面板中之雜質離子直接影響面板之電 氣參數,成為液晶顯不面板顯不不良之原因或顯不品質降 低之原厨。因而,在工業上之生產作業時,要求和在檢查 製程之問題發生同時偵測產品之液晶顯示面板内之雜質離 子密度。 在習知之手法上有破壞面板後用電化學分析手法得知 所抽出液晶内之離子種類或濃度之方法,或破壞面板後將 所抽出之液晶重新注入評價用單元,量測其電氣響應而決 定離子濃度之方法等。可是,因這些手法都需要破壞面 板,不僅只能在發生問題後經過相當之時間時量測,而且 在試件製作操作之過程導致液晶再污染,難高精度的量 測。 又,因液晶顯示面板之顯示不良常由離子在液晶顯示 面板之面内分布之不均勻性引起,要求離子之面内分布之 資料,但是在上述破壞面板之手法無法量測液晶顯示面板 之面内分布。為了以非破壞得到關於液晶顯示面板内之離 子之資料,只要能各自獨立的量測形成液晶顯示通板之各 像素之電氣特性即可。因為關於離子之資料常由對於施加 電壓之響應電流波形推導。可是,液晶顯示器之電氣驅動475060 V. Description of the Invention (1) Technical Field of the Invention The present invention relates to a method and a device for measuring the density (concentration) of impurity ions in a liquid crystal display panel, and particularly relates to a non-destructive measurement of the ion density of a liquid crystal. Method and device. Conventional technology Because the impurity ions in the nematic liquid crystal display panel directly affect the electrical parameters of the panel, it has become the cause of the poor display of the liquid crystal display panel or the quality of the display is reduced. Therefore, in the industrial production operation, it is required to detect the impurity ion density in the liquid crystal display panel of the product at the same time as the problem of the inspection process occurs. In the conventional method, there is a method of knowing the type or concentration of ions in the extracted liquid crystal by electrochemical analysis after destroying the panel, or re-injecting the extracted liquid crystal into the evaluation unit after destroying the panel and measuring the electrical response to determine Methods of ion concentration, etc. However, because these methods need to damage the panel, not only can it be measured after a considerable time has passed since the problem occurred, but also the liquid crystal is recontaminated during the test piece manufacturing operation, which makes it difficult to measure with high accuracy. In addition, the poor display of a liquid crystal display panel is often caused by the uneven distribution of ions in the surface of the liquid crystal display panel. Information on the distribution of ions in the surface is required, but the method of destroying the panel cannot measure the surface of the liquid crystal display panel. Within distribution. In order to obtain the information about the ions in the liquid crystal display panel in a non-destructive manner, it is only necessary to independently measure the electrical characteristics of the pixels forming the liquid crystal display panel. Because information about ions is often derived from the response current waveform to the applied voltage. However, the electrical drive of liquid crystal displays
第4頁 4〇υϋϋ 五、發明說明(2) 方法在簡單陣 得到只有某種 子之資料,但 影響。又,至 動陣列型液晶 之電氣資料係 發明所欲解決 習知之雜 板後量測的, 此外,在 板製程管理上 本發明之 一目的在於使 度,其第二目 用以解決課題 為了達成 面板之離子密 流電壓後自其 度。 而且,最 形之面積求離 部分區域之透 又,為了 液晶面板之離 列型液晶顯 程度獨立之 是無法完全 於以薄膜電 顯示面板, 很困難。 之課題 質離子密度 不僅費時費 習知之量測 重要之資料 課題在於解 得能以非破 的在於使得 之手段 上述之目的 度測定方法 透射光強度 好自透射光 子密度。又 射光之強度 達成上述之 子密度測定 示面板藉著將驅動條件最佳化 像素之響應電流,可得到關於離 切斷由串訊所引起之相鄰電極令 晶體(T F Τ )驅動方式等驅動之主 在構成電路上獨立的得到各像素 之量測方法因係破壞液晶顯示面 力,而且在量測精度上有問題。 方法,無法得知係在液晶顯示面 之在面内之離子分布。 決上述習知技術之問題點,其第 壞量測液晶顯示面板之離子密 可掌握離子密度之面内分布。 ’若依據本發明,提供一種液晶 ’其特徵在於對液晶面板施加交 之閃爍波形偵測液晶内之離子密 強度之閃爍波形之振幅或閃爍波 ’最好個別量測來自液晶面板之 後’求各部分區域之離子,,密度。 目的’若依據本發明,提供一種 裝置’係具備驅動液晶面板之任 475060Page 4 4〇υϋϋ V. Description of the invention (2) The method obtains only some kind of data in a simple matrix, but it affects. In addition, the electrical data of the moving-array liquid crystal are measured after the conventional miscellaneous board is intended to be solved by the invention. In addition, in the process management of the board, one of the objects of the present invention is to make the degree. After the panel's ionic dense current voltage, its degree will be changed. In addition, it is difficult to obtain the most transparent area from a part of the area, and it is difficult to completely use a thin-film electrical display panel for the independence of the liquid crystal panel's LCD display. The subject Mass ion density is not only time-consuming and familiar measurement important information The subject is to solve the non-breaking means to make the above-mentioned purpose Degree measurement method Transmitted light intensity Good self-transmitted photon density. In addition, the intensity of the light reaches the above-mentioned son density measurement display panel. By optimizing the driving conditions of the pixel's response current, it is possible to obtain a driving method for driving off the adjacent electrode-induced crystal (TF T) caused by crosstalk. The method of measuring each pixel independently on the constituent circuit is because the surface force of the liquid crystal display is destroyed, and there is a problem in the measurement accuracy. Method, it is impossible to know the in-plane ion distribution on the liquid crystal display surface. In order to solve the problems of the above-mentioned conventional technology, the first measurement of the ion density of the liquid crystal display panel can grasp the in-plane distribution of the ion density. 'If a liquid crystal is provided according to the present invention', it is characterized in that an alternating flicker waveform is applied to the liquid crystal panel to detect the amplitude or flicker wave of the flicker waveform of the ion-dense intensity in the liquid crystal. Ions, density in some areas. Purpose ‘if provided according to the present invention, a device’ is provided with any device for driving a liquid crystal panel 475060
意波形產生裝置、脾也 ^ a , 肘先妝射液晶面板之光源、觀測透射該 4 _署盘$ & ^ 衫像感測器以及統轄該任意波形產 生装置興该面影德武、、即 像感測器之動作之具有記憶裝置之資料處 理裝置之液晶面姑+從7 ^ 板之離子岔度測定裝置,可個別的處理該 面影像感測器之久德I β & t ^ , 問燦。 < 谷像素之偵測資料,並可對該各像素偵測 一而十^ ^還具備可監視該面影像感測器之輸出波形 之示波二。亥貝料處理裝置經由該示波器收集該面影像感 測器之輸出資料。 作用 一在本f明’為了得到關於液晶顯示面板中之雜質離子 之資料’著眼於液晶中之離子引起之透射光強度之閃爍。 身又’對向列液晶顯示面板之各像素施加正負對稱之 交流電壓,在離子不存在之情況,在交流電壓施加之各施 加區域相等之電壓作用於液晶。在此情況,液晶分子按照 施加電壓之大小一直保持固定之傾斜角而不變,未出現透 射光強度之閃爍。 而,目岫雖不明白細節,但是因故在液晶單元内發生 内部電壓,在此情況,因該内部電壓和施加電壓重疊,在 各施加區域大小不同之電壓作用於液晶。例如,在使用電 介質異方性為正之向列液晶之TN模式為平常白模式之情 況,施加符號和内部電壓相同之電壓時作用於液晶之電壓 變高,液晶之傾斜角比理想之傾斜角大,透射光強度變 低。而,施加符號和内部電壓相反之電壓時作用於液晶之The intentional waveform generating device, the spleen also ^ a, the elbow first applies the light source of the LCD panel, observes and transmits the 4 _ Agency $ & ^ shirt image sensor and the arbitrary waveform generating device, which controls the arbitrary shape, that is, The liquid crystal surface of a data processing device with a memory device acting like a sensor + an ion bifurcation measuring device from a 7 ^ plate can individually process the long-term image of the surface image sensor I β & t ^, Ask Chan. < The detection data of the valley pixels, and each pixel can be detected. ^^^ It also has an oscilloscope II which can monitor the output waveform of the surface image sensor. The Haibei material processing device collects the output data of the area image sensor through the oscilloscope. Action-In order to obtain information on impurity ions in a liquid crystal display panel, the present invention focuses on the flicker of the transmitted light intensity caused by the ions in the liquid crystal. In addition, positive and negative symmetrical AC voltages are applied to the pixels of the nematic liquid crystal display panel. In the case where ions are not present, an equal voltage is applied to the liquid crystal in each application area of the AC voltage. In this case, the liquid crystal molecules maintain a constant inclination angle without changing according to the magnitude of the applied voltage, and there is no flicker of the transmitted light intensity. Although the details are unclear, internal voltages occur in the liquid crystal cell for some reason. In this case, because the internal voltage and the applied voltage overlap, a voltage having a different size in each applied region acts on the liquid crystal. For example, when the TN mode of a nematic liquid crystal with a positive dielectric anisotropy is the normal white mode, the voltage applied to the liquid crystal becomes higher when a voltage with the same sign and internal voltage is applied, and the tilt angle of the liquid crystal is larger than the ideal tilt angle. , The transmitted light intensity becomes low. However, when a voltage with a sign opposite to the internal voltage is applied to the liquid crystal,
475060 五、發明說明(4) — 變低,液晶之傾斜角比理想之傾斜角小,透射光強度 。這係在液晶顯示面板之閃燦之一例。該閃爍之週期 ϋ離子不相依之閃爍之週期)和施加電壓之週期相同。 之而,在液晶内存在可追蹤施加電壓之週期之可動離子 低月2,在各施加區域發生由離子之漂移引起之電場降 壓之=於液晶之電壓隨著時間衰減。例如,在施加正電 曰ίέ ,在細1加電壓之瞬間最高之電壓作用於液晶,液 ί極:i之而上升。同時因液晶内之離子開始往極性和各自 目反之電極方向漂移,作用於液晶之電壓隨著時間 ^之:t該電壓降低,液晶自某時間開始傾斜= 之透射率也至某時間為止降低,但是:後 ϋ域也:生平揭常白模式之情況)。接著,在施加負電壓之 £域也發生-樣之現象。因此 貝也 頻率之可動離子之情況之閃右=子在可追縱施加 率。 ]墚就八有她加頻率之2倍之頻 如上述所示,在閃爍有施加電 子無法追縱之高施加頻率閃爍消 =相依性,在離 區域德和。因此,若對於液晶顯示面充为追蹤之低頻 之充分低之頻率區域施加電屡,觀測:二:有離子可追縱 不破壞液晶顯示面板就可確認 τ炙生之閃爍,可 因該間爍之大小(閃爍振幅等)和:曰曰:離子之存在。而, 度相依,藉著觀測閃爍之大小能:面板内之離子密 而且,閃爍之大小和光之:射面:J得知離子密度。 密度相依。換言之,面板面内之各,各部之局部之離子 77之局部之閃爍之大 475060 五、發明說明(5) — 小和面板在該部分之離子密度相依。因此’在本發明, 著使用CCD照相機等面型影像感測器收集面板面内之各部9 之閃爍資料,據此求在面内各部之離子密度。因而,若依 據本發明,可認識在液晶面板面内之離子密度分布。 發明之實施例 一其次,參照圖面說明本發明之實施形態。圖丨〜圖3係 表示本發明之實施形態之流程圖。圖4係表示進行利用本 發明之離-子密度測定方法之量測裝置之概略之方塊圖。 自光源41射出之光通過偏光板42 在圖4 44後,再通過偏光板43,由光偵測器45偵測,經示波哭〇 暫時收集資料後,傳給個人電腦等資料處理裝置48,/ :在:料處理裝置48所附設之記憶裝置㈣。利用任意波J ^生器46對液晶單元44施加電壓,相對於時間之電壓值 貧料和透射光強度㈣儲存於示波器47後,傳給資料處理 裝置48。這些任意波形產生器46、光偵測器45以及示波哭 47之動作由資料處理裝置48統轄。又,資; 行之程式儲存於記憶裝置49内。 ’罝執 在光源41上,在照射於液晶單元44整個面之情況,可 使用_素燈、金屬鹵化物燈、冷陰極管,又,在局部照射 於液晶,元44之情況,可使用可見光雷射。在光偵測器'45 上,,ΐ測液晶面板之整個面之平均光強度之情況,可使 用可量測光強度之一般性光偵測器,但是在量測液,晶單元 44上之局部透射光強度之情況,使ffiCCD(Cha^e Caupled D e v i c e )固態攝像裝置等面影像感測器。在後者之情況,475060 V. Description of the invention (4) — becomes lower, the tilt angle of the liquid crystal is smaller than the ideal tilt angle, and the transmitted light intensity is low. This is an example of the glitter of LCD panels. The period of the flickering (the period of the flickering of the ions independently) is the same as the period of the applied voltage. In addition, there are mobile ions in the liquid crystal that can track the period of the applied voltage. On the second month, the electric field drop caused by the drift of ions occurs in each applied area = the voltage of the liquid crystal decays with time. For example, when a positive voltage is applied, the highest voltage is applied to the liquid crystal at the instant when the voltage is applied, and the liquid level rises. At the same time, as the ions in the liquid crystal begin to drift toward the polarity and the opposite electrode direction, the voltage applied to the liquid crystal over time ^: t This voltage decreases, and the liquid crystal begins to tilt from a certain time = the transmittance also decreases until a certain time, But: Hou Jiyu also: The situation of Changbai mode in his life). Then, the same phenomenon occurs in the £ domain where a negative voltage is applied. Therefore, the frequency of the mobile ion in the case of the right frequency = the rate at which the application rate can be traced. ] 墚 has eight times the frequency of her plus frequency. As shown above, the flicker has a high applied frequency that the electrons cannot track. Therefore, if electricity is applied to a sufficiently low frequency region where the liquid crystal display surface is filled with tracking low frequencies, observations are as follows: Two: Ions can be traced without damaging the liquid crystal display panel, and τ's flicker can be confirmed. The size (flicker amplitude, etc.) and: Said: the existence of ions. And, depending on the degree, by observing the size of the flicker, the ion density in the panel can be known. Also, the size of the flicker and the light: the emitting surface: J can know the ion density. Density is dependent. In other words, each part in the face of the panel, part of the ions of each part 77, the flicker of part of the part is large 475060 V. Description of the invention (5)-Small and dependent on the ion density of the part in the panel. Therefore, in the present invention, a surface-type image sensor such as a CCD camera is used to collect scintillation data of each part 9 in the panel surface, and the ion density of each part in the surface is obtained accordingly. Therefore, according to the present invention, it is possible to recognize the ion density distribution in the plane of the liquid crystal panel. Embodiment of the Invention Next, an embodiment of the present invention will be described with reference to the drawings. Figures 1 to 3 are flowcharts showing an embodiment of the present invention. Fig. 4 is a block diagram showing an outline of a measuring device for performing the ion-density measuring method of the present invention. The light emitted from the light source 41 passes through the polarizing plate 42 after passing through the polarizing plate 43 and then passes through the polarizing plate 43 and is detected by the light detector 45. After the oscilloscope is temporarily collected, it is transmitted to a data processing device 48 such as a personal computer. ,:: Memory device 所附 attached to the material processing device 48. The arbitrary-wave generator 46 is used to apply a voltage to the liquid crystal cell 44. The voltage value with respect to time and the light intensity and transmitted light intensity are stored in the oscilloscope 47 and transmitted to the data processing device 48. The operations of these arbitrary waveform generator 46, light detector 45 and oscilloscope 47 are under the control of data processing device 48. In addition, the program is stored in the memory device 49. When the light source 41 is attached to the entire surface of the liquid crystal cell 44, a _ prime lamp, a metal halide lamp, or a cold cathode tube can be used, and when the liquid crystal is partially irradiated to the liquid crystal unit 44, visible light can be used. Laser. On the photodetector '45, to measure the average light intensity of the entire surface of the LCD panel, a general photodetector that can measure the light intensity can be used, but on the measurement liquid, the crystal unit 44 In the case of local transmitted light intensity, a planar image sensor such as a CCD (Cha ^ e Caupled Development) solid-state imaging device is used. In the latter case,
475060 五、發明說明(6) _ 面影像感測器之各像素或分組之 ^ 資料處理裝置48收集、處理。 ”之偵測光之資料由 而且’視需要可配置用以聚 抑 側或光偵測器45側之某一方或雙C曰早兀44之光源41 透鏡系。 《系方次雙方或用以得到平行光線之 在一般之液晶顯示面板,偏光板和液晶單元之 接成一體。因此,在對於已固接二固 月兄不必在1測裝置内配置偏光板42、43。 I、^2發:按之,子密度之量測係按照圖1所示之階段 i,不:階段π、圖3所示之階段瓜依次進行。其 部分二in =係表示ί用以實施構成本發明之核心 :===得到之資料…,可省= Ϊ因ΐ ϊ ’即中間階電壓附近易受到離子之漂移影 4壓為Ϊ照 測離子資料時決定對液晶顯示面板施加之 夕邱二=~透射率圖形上之透射光強度特性曲線之陡峭 一 ^ I廷在量測效率上較佳。因此,在階段1 ,求電壓 壓值。、率曲線之陡峭之區域後,決定閃爍量測用之施加電 百先’在步驟S1 〇 1,指定開始量測之電壓,在步驟 S1 02自任意波形產生器46對液晶單元44施加在所指定之電475060 V. Description of the invention (6) _ The data processing device 48 of each pixel or group of the area image sensor collects and processes it. The data of the detection light is based on and 'can be configured to suppress one side of the side or the light detector 45 side or the double light source 41 lens system of the light detector 41 as needed. To obtain parallel light, the ordinary liquid crystal display panel, polarizing plate and liquid crystal unit are connected together. Therefore, it is not necessary to configure the polarizing plates 42, 43 in the 1-test device for the two solid-arranged brothers. I, ^ 2 hair : According to this, the measurement of the sub-density is performed in accordance with stage i shown in FIG. 1, but not: stage π and the stage shown in FIG. 3 are sequentially performed. The second part in = is used to implement the core of the present invention. : === Obtained data ..., can be saved = Ϊ 因 ΐ ϊ 'that is, the intermediate stage voltage is susceptible to the drift of ions. The pressure is determined when the ion data is measured. The steepness of the transmitted light intensity characteristic curve on the rate graph is better in measurement efficiency. Therefore, in stage 1, the voltage and voltage values are calculated. After the steep area of the rate curve, the application of the flicker measurement is decided Dianbaixian 'In step S1 〇1, specify the voltage to start measurement, in Step S1 02 from the arbitrary waveform generator 46 is applied to the liquid crystal cell 44 are electrically designated
第9頁 4/^060 五、發明說明(7) 壓之交流電 料和施加電壓 48。接著,在 測終了之電壓 個單位後,回 步驟S1 05,自 變化最陡崎之 處理(所求得v 此外,在 極微量之離子 使用之液晶單 作成未摻雜離 在階段I 是在階段π、 值。只要係中 但,在階 在階段Π 曲線製施加液 單元係自產品 離子而製作之 首先,在 片離子污染液 元之中之一片 得之電壓值之 ‘—利用光偵測器45偵測那時之透射率,該資 之被抓入示波器4 7後,傳給資料處理裝置 :,103,㉟查施加電壓是否達到預定之量 告未達到,在步驟令施加電壓上 :驟S1 02。若達到量測終了之電壓,移 =之V-T(電壓—透射率)特性曲線將复 二i决疋為在量測使用之施加電壓後,結束 寺性曲線之一例如圖J 0所示)。 使用之液晶單元將完全未含離子的或含 的作為參昭用、、存曰留- 有Page 9 4 / ^ 060 V. Description of the invention (7) AC voltage and applied voltage 48. Next, after measuring the voltage units, return to step S105, and change the processing of the steepest change (the obtained v). In addition, the liquid crystal used in a very small amount of ions is made of undoped ion in phase I is in phase. π, value. As long as it is in the stage, in the stage Π curve application liquid unit is made from product ions. First, the voltage value obtained from one of the ion contaminated liquid cells-using a light detector 45 to detect the transmittance at that time, after the data was caught in the oscilloscope 4 7 and passed to the data processing device: 103, check whether the applied voltage has reached a predetermined amount and reported that it has not been reached. S1 02. If the voltage at the end of the measurement is reached, the VT (voltage-transmittance) characteristic curve of shift = will be determined to be one of the characteristic curves after applying the applied voltage for measurement, such as shown in Figure J 0 Show). The liquid crystal cell used will be completely free of ions or containing as a reference,
元在ώ二,、、、 日日早70使用。又,在階段I :自產品用之單元之中選擇的也可 于之,加電壓決定之液晶單元也可。 ^ t疋之電壓值在階段η與階段瓜使用,但 未必要嚴格的實施在階段〗所決定之& 丁附近之電壓值就夠了之情況多。 S與階段瓜,需要使用相同之施加電壓。 曰置用ΐ有彼此不同之離子濃度之多片校正 =兀1作校正曲、線。在階段Π使用之液晶 校擇的也可,但是係令預先含有 曲線I施加液晶單元也可。 ,準備含有雜質離子濃度不同之多 。在步驟S2 02,選擇所準備之液 ^ v驟S 2 0 3施加例如1 η z之在階段I所求 矩形波,觀測施加電壓時之透射光強度,亦 475060 五、發明說明(8) 即閃爍。在此,在施加電壓之頻率上所選定之1 Hz係預定 離子將充分飽和而決定的。因此,若係適合此目的之頻 率,可適當的變更。接著,在步驟S204,檢查未出現閃爍 之區域,即是否出現透射光固定之區域,在透射光固定之 區域不存在之情況,移至步驟S2 0 5,降低頻率後,施加電 壓,進行閃爍量測,回到步驟S 2 0 4。在步驟S 2 0 4,在確認 了透射光固定之區域存在之情況,移至步驟S2 0 6,求閃爍 振幅或閃爍面積。在此,閃爍振幅係自透射光固定之區域 所看到之振幅(之絕對值)之最大值,閃爍面積係由表示透 射光固定之水平線和閃爍波形所包圍之面積。 其次,在步驟S2 0 7,施加低頻(例如〇 · 〇 1 Hz )之三角波 電壓,量測那時在液晶單元流動之電流。因此時在單元流 動之電流和該單元所含之離子密度相依,藉著量測該電流 可得知離子密度。因而,在步驟S 2 0 8,自在所得到之響應 電流波形出現之離子電流尖峰值計算離子密度。接著,在 步驟S2 0 9,檢查是否對於所準備之液晶單元全部量測完 了,若量測未完了,回到步驟S2 02,選擇下一液晶單元。 在對於所準備之液晶單元全部量測完了之情況,在步驟 S2 1 0,製作校正曲線。即,在相關圖上晝閃爍振幅或閃爍 面積和離子密度之組,求校正曲線(所求得校正曲線之 例如圖11所示)。 在階段I與階段Π,在準備階段〗用或階段n用之特 =之液晶單元之情況,製作具有單一像素之單元。在使用 單一像素之單元求用以量测主動陣列液晶顯示面板之施加The yuan is used in the second, 70, 70 every day. Also, in phase I: it can be selected from the units used in the product, and liquid crystal cells determined by the applied voltage can also be used. ^ The voltage value of t 疋 is used in phase η and phase, but it is not necessary to strictly implement the voltage value in the vicinity of & S and stage melon need to use the same applied voltage. Use a multi-plate correction with different ion concentrations. For the correction curve and line. The liquid crystal used in stage II may be selected, but it is also possible to apply a liquid crystal cell containing curve I in advance. Ready to contain as many different concentrations of impurity ions. In step S2 02, select the prepared liquid ^ v S2 0 3 Apply, for example, 1 η z the rectangular wave obtained in phase I, and observe the transmitted light intensity when the voltage is applied, also 475060 V. Description of the invention (8) flicker. Here, the selected 1 Hz at the frequency of the applied voltage is determined because the predetermined ions will be sufficiently saturated. Therefore, if the frequency is suitable for this purpose, it can be changed appropriately. Next, in step S204, it is checked whether there is an area where flicker does not occur, that is, whether there is an area where the transmitted light is fixed. If the area where the transmitted light is fixed does not exist, move to step S205. After reducing the frequency, apply a voltage to perform the amount of flicker. Measurement, return to step S204. In step S204, when it is confirmed that the area where the transmitted light is fixed exists, the process moves to step S206, and the flicker amplitude or flicker area is obtained. Here, the flicker amplitude is the maximum value of the amplitude (absolute value) seen from the area where the transmitted light is fixed, and the flicker area is the area surrounded by the horizontal line and the flicker waveform indicating that the transmitted light is fixed. Next, in step S207, a triangular wave voltage of a low frequency (for example, 0.1 Hz) is applied to measure the current flowing in the liquid crystal cell at that time. Therefore, the current flowing in the unit depends on the ion density contained in the unit. The ion density can be obtained by measuring the current. Therefore, at step S208, the ion density is calculated from the peak value of the ion current at which the obtained response current waveform appears. Next, in step S209, it is checked whether all the prepared liquid crystal cells have been measured. If the measurement is not completed, return to step S202 and select the next liquid crystal cell. When all the prepared liquid crystal cells have been measured, a calibration curve is created in step S2 10. That is, on the correlation diagram, a correction curve is obtained by the combination of the amplitude of the daytime scintillation or the scintillation area and the ion density (for example, the obtained correction curve is shown in Fig. 11). In stages I and II, in the case of a liquid crystal cell used in the preparation stage or in the stage n, a cell having a single pixel is produced. The application of single-pixel units to measure the application of active array liquid crystal display panels
475060 五、發明說明(9) 電壓之情況,藉著令單一傻音之罝分、# α 作,求施加雷愚:二 早進仃虛擬主動陣列動 5(a)所示電路進/义,曲線。虛擬主動陣列動作利用圖 抗變換哭^ ί 在圖5(a) , 51係波形產生器,52係阻 重複古、^係液晶單元。在此,阻抗變換器52進行交互 σκτΓ之動作 Λ阻抗狀態之動作,虛擬薄膜電晶體 如圖5(b)、圖5(Ί:,52之輸入、輸出侧之信號圖形 將液:面ί:段η,在使用實際產品之液晶面板之情況, 主動“、夜::面驅動成同一顯示狀態。*此情況,對於 動。】液日日顯不面板,在步驟S1 02等進行主動陣列驅 階段冚係成為本發明之量測方法之核心 —、疋否,在可動性離子。此時之施加電壓係在階段I決 ::之加頻率例如使用ι〇Ηζ,但是按照單元之間隙’或 勺之離子之移動度適當的變更該頻率,只要係 GCi加電壓之頻率管係飽和頻率或是;飽 可。在偵測微量離子之影響之情況,$了使離子 ^移之影響發揮至t大限度,係、離子之漂移距離變長之 :和:率較佳。可是’ θ離子之影響因離子移動而發生, 係不飽和頻率也可偵測離子,在此情況量測時間縮短。^ 發生基於雜質離子之閃爍之情況,如圖6所示,相對於下土 ϊϋι輸人電壓’如圖之上部所示,觀測到頻率為施加 電£之2乜之閃爍。在步驟S3 02,判斷是否發生閃爍,若475060 V. Description of the invention (9) The voltage situation, by making a single silly note, # α, to find the application of Lei Yu: two early advance into the virtual active array move the circuit shown in 5 (a), meaning, curve. Figure 5 (a), Figure 51 (a), 51 series waveform generator, 52 series anti-retro, ^ series liquid crystal cell. Here, the impedance transformer 52 performs the action of σκτΓ to interact with the Λ impedance state. The virtual thin film transistor is shown in FIG. 5 (b) and FIG. Segment η, in the case of using the LCD panel of the actual product, active ", night :: surface drive to the same display state. * In this case, for dynamic.] Liquid day display is not displayed on the panel, and active array drive is performed in step S102. Phase 冚 becomes the core of the measurement method of the present invention—whether or not, in movable ions. The applied voltage at this time is determined in phase I :: The frequency is added, for example, using ι〇Ηζ, but according to the gap of the unit 'or The mobility of the ion of the spoon changes the frequency appropriately, as long as it is the frequency of GCi plus voltage or the saturation frequency of the tube; it is acceptable. In the case of detecting the effect of trace ions, the effect of ion shift is brought to t To a large extent, the drift distance between the system and the ions becomes longer: and the ratio is better. However, the influence of θ ions occurs due to the movement of the ions, and the ions can also be detected at the unsaturated frequency. In this case, the measurement time is shortened. ^ Impurity-based ionization In the case of flickering of the child, as shown in FIG. 6, the flickering frequency is shown in the upper part of the input voltage as shown in the upper part of the figure, and a flicker having a frequency of 2% of the applied power is observed. In step S302, it is determined whether flickering occurs. If
第12頁 475060 五 發明說明(10) 未觀測到閃、谏,+ + 為彳自、目I 1 在此日守刻液晶單元44之量測終了。 在偵测到閃纟串之愔 移在施加區域内;巧良在步驟S3〇3,為了在離子之漂 後可確認透射率;變之=了:施加區域内出現閃爍波形 觀測閃燦。此休.σσ 將施加頻率降低至例如1 Hz 況,如圖中广綠j在已知生由雜質離子引起之閃爍之情 S303開始。、、斤不不鈹由步驟S301、S302,而由步驟 存在接Ϊ無域=透射光強度固定之區域是否 加電壓之頻率,拄=:二从月况,移至步驟S30 5,降低施 為止,在確ί 了;;,區域出現 步驟S306。圖7係表示在此情 £域存在之情況,移至 加電壓之圖1,在施 二之透射率之變化和施 態區域71。“,將透射率變=變化之飽和狀 矣- π墟+ Γ 2之差疋義為閃燦振幅73詈、、目,丨七水 表不閃燦之飽和狀態區域71之 川。或者,將 面積定f為閃爍面積74量測。十線和閃爍波形所包圍之 其次,在步驟S307,自預先灸p ^ 爍振幅(或閃爍面積)之關係求離子::表示離子密度和閃 實施例 ⑷度。 其次,邊參照圖面邊詳細說明 實施例1 本毛明之實施例。 在本貫施例說明自對向列液 ’ 形波時之閃燦振幅求離子密度之;J均邊定向單元施加矩 475060 五、發明說明(11) 在本實施例使用之液晶單元如圖8(a)、(b)所示製 作。 如圖8所示,在由C〇rning70 5 9構成之3cmx 4cm之玻 璃基板81上形成氧化銦錫(IT〇)膜,在中央部形成卜口 ^πι之像 >素電極82,而且形成了拉出電極83。形成電極後 1其上旋轉塗抹,以9(rc3〇分鐘暫時烘烤3〇分鐘後,以 〇 C供^烤1小時,形成聚醯亞胺定向膜84。此外,為了組 =一巧早兀乂需要2片該附有定向膜之基板。在聚醯胺酸 用二(4、4 —經基聯苯撐均笨四曱醯胺酸。又,用反射 入振光橢圓计所1測聚醯亞胺定向膜之膜厚係7 8 〇人〜8 2 〇 研磨使用Rayon之滾筒以轉速8〇〇轉/min、壓入 η rw工作台速度20mm/s之條件進行1次。研磨後,將2 你R 土板8_丨重疊成各自之研磨方向相反後,用混合了直 之間隔粒子之環氧系黏接劑8 5固定。在該單元均質 反平ί ί之向列液晶8 6後’用紫外線硬化樹脂封孔,作為 外,^ : ^ (相-向之2面之定向方向相差180度之單元)。此 膜。° 未示’在像素電極除外之玻璃基板上形成遮光 作η^樣所形成之液晶單元配置於圖4所示量測裝置, 所^。偏光板42、43和定向膜84在研磨方向關係如圖9 窬榦Μ I 一中’分別以箭號91、92表示偏光板42、43,用 偏^ 不聚醯亞胺定向膜84之研磨方向。如圖9所示, 1甸九板42、42夕抱止士人 之偏光方向正交,而且其偏光方向各自和研Page 12 475060 5 Description of the invention (10) No flash or thorium is observed, ++ is self-throwing, head I 1 At this day, the measurement of the liquid crystal cell 44 is finished. After detecting the flash of the scorpion string moving in the application area; Qiaoliang in step S303, in order to confirm the transmittance after the ion drift; changed =: flicker waveform appears in the application area, observe the flashing. This time, .σσ reduces the application frequency to, for example, 1 Hz. As shown in the figure, the broad green j starts from the flicker caused by impurity ions S303. Steps S301 and S302, and step by step, there is no field = frequency of the voltage applied to the area where the transmitted light intensity is fixed, 拄 =: 2 From the month, move to step S30 5 and reduce the application In the confirmation; step S306 appears in the area. Fig. 7 shows the situation in which the £ field exists. Moving to Fig. 1 where the voltage is applied, the change in transmittance and the state region 71 in the second embodiment. "The difference between the transmittance change = the saturated state of change-ππ + Γ 2 is defined as the flashing amplitude of 73 詈, 目, 七, and the seven water meter is not flashing in the saturated state region 71 of the river. Or, the area Let f be the measurement of the scintillation area 74. Next, surrounded by the ten lines and the scintillation waveform, in step S307, the ion is obtained from the relationship between the pre-moxibustion p ^ flicker amplitude (or flicker area): indicates the ion density and the flicker degree. Next, the detailed description of Example 1 will be described with reference to the drawings. In this example, the ion density of the flashing amplitude in the self-opposing nematic liquid shape wave will be described; 475060 V. Description of the invention (11) The liquid crystal cell used in this embodiment is made as shown in Figs. 8 (a) and (b). As shown in Fig. 8, a 3cmx4cm glass substrate made of Corning 70 5 9 is used. A film of indium tin oxide (IT0) was formed on 81, an image of a pinhole > element electrode 82 was formed in the central portion, and a pull-out electrode 83 was formed. After the electrode was formed, it was spin-coated on top of the electrode to form 9 (rc3〇). After 30 minutes of temporary baking, bake at 0 ° C for 1 hour to form a polyimide orientation film 84. In addition, in order to set up a coincidence, two substrates with an orientation film are needed. Use poly (4,4—biphenylene tetramer) in polyamic acid. Also, The thickness of the polyfluorene-imide oriented film was measured with a reflection-in-vibration ellipsometer 1 from 800 to 800. Grinding using a Rayon roller was performed at a rotation speed of 8000 rpm and a pressure of η rw. The condition is performed once per second. After grinding, the 2R R soil plates 8_ 丨 are overlapped so that their respective grinding directions are opposite, and fixed with an epoxy-based adhesive 8 5 mixed with straight spacer particles. It is homogenized in the unit. Anti-flat ί After the nematic liquid crystal 8 6 ', the hole is sealed with ultraviolet curing resin, as the outer, ^: ^ (phase-the direction of the direction of the 2 planes differs by 180 degrees). This film. ° Not shown' in A liquid crystal cell formed by forming a light-shielding pattern on a glass substrate other than the pixel electrode is arranged in the measuring device shown in Fig. 4. Therefore, the relationship between the polarizing plates 42, 43 and the alignment film 84 in the polishing direction is shown in Fig. 9 (a). “I in China” indicates the polarizing plates 42 and 43 with arrows 91 and 92, respectively, and the polishing direction of the polarized polyimide alignment film 84 is shown in FIG. 9 Xi 1 Austin nine plates 42, 42 hold stop perpendicular to the polarization direction of scholars, and its polarization direction and each RESEARCH
475060 五、發明說明(12) 磨方向形成4 5度 如上述所示製作多片液晶單元 響應電流求離子密度,將無法確認:離;電屢之 透射率圖形上之透射光強度特性曲線量測用之夫為電屢〜 早二ΓΓί自了離子電流的作為量測用液“Ϊ用液晶 匕外,為了自後述之透射率之振幅求離 正曲線之製作用,製作了進行強迫污染之液曰:、度&之校 條件和上述-# ’但是在基板相黏之前浸泡。製作 為校正曲線製作用液晶單元。 』之液日日早兀,作 首先,量測了參照用液晶單元之電壓一 【4之量測裝置,藉著使用任意波形產生二二上二475060 V. Description of the invention (12) Formation of 45 degrees in the grinding direction. As shown above, make multiple pieces of liquid crystal cells in response to the current to determine the ion density. It will not be possible to confirm: off; measurement of the transmitted light intensity characteristic curve on the transmittance graph of electricity. I use it as an electric power ~ As early as the second, I used a liquid for measuring the ion current as a measurement liquid, and used it to make a positive curve from the amplitude of the transmittance described below. Said :, degree & school conditions and the above- # 'but soaked before the substrates are stuck. It is made as a liquid crystal cell for calibration curve production.' The liquid is getting older every day. First, the reference liquid crystal cell was measured. Voltage one [4 measurement device, by using arbitrary waveform to generate two two on two
▲、止〇. 1V間隔施加,對液晶單元表面之—個 射透射光強度和各自之電壓值對庳 σθ刀或JE•们面A 料處理狀W /1 Q^ 徂対應之先而量測。然後,資 時之透記憶裝置49内之程式,以施加0v 度為_、施加土lov時之透射光強度為〇% 率ίΐί 變換為透射率。將結果所得到之電壓-透射 電之透射光強度特性曲線製作成如圖1〇所示。在該 變成曰4·射率特性曲線將相對於電壓之變化之透射率變化 利:U點之電壓設為閃爍量測電壓。•圖1〇之情況, J用貝^處理裝置48令分析之結果,決定為27V。,, -人,製作用以自閃爍振幅求離子密度之校正曲線。 對校正曲線製作用液晶單元施加± 27v、lHz之矩形▲ 、 Only 0.1V interval application, the intensity of the transmitted light and the respective voltage value on the surface of the liquid crystal cell shall be equal to 庳 σθ knife or JE · A surface treated material W / 1 Q ^ Measurement. Then, the program in the time-transmissive memory device 49 is converted to transmittance by applying 0v degrees as _, and transmitting light intensity when applying lov as 0%. The transmitted light intensity characteristic curve of the voltage-transmitted power obtained as a result is shown in FIG. 10. At this time, the emissivity characteristic curve changes the transmittance with respect to the change in voltage. The voltage at the U point is set as the flicker measurement voltage. • In the case of FIG. 10, the analysis result of J using the shell processing device 48 was determined to be 27V. ,, — 人, make a calibration curve to find the ion density from the flicker amplitude. Apply a rectangular shape of ± 27v, lHz to the liquid crystal cell for calibration curve production
IH8, 第15頁 475060 五、發明說明(13) 波電壓,求閃爍振幅(階段Π,步驟S2〇3〜206 ) 5接著自施 加振幅1 0 V、0 · 〇 1 Η z之三角波電壓時之響應電流求離子密 度(階段Π,步驟S207、208 )。由量測多片液晶單元之結 ^得到之校正曲線如圖1 1所示。離子密度在假設離子為一 價且正負離子都等量下以每丨cm3之個數表示。所得到校正 曲線之式子如下。 離子密度=2 . 6 在本實施例所 個,利用本發明量 定為2. 7V。按照階 2· 7V、10Hz之矩形 所示。如圖1 2所示 可確認可動性離子 1Η z,求閃爍振幅( 示。可使用校正曲 〔評價〕 比較了照這樣 時之響應電流求得 微之差異,兩者之 度量測有效。 X 1〇12 X閃爍振幅 製作被檢測對象之量測用液晶單元為7 測這些之離子密度。閃爍量測電壓已決 段瓜(圖3)之流程圖,首先,施加土彳、 波,那時出現之閃爍波形之一例如圖12 ,因閃爍具有施加頻率之2倍之頻率, 之存在。其次,將施加電壓之頻率 :時所得到閃燦波形之—例如圖為 線由各自之閃爍振巾昌求離切度3。13所 所求得之離子密度和自施加 之離子密度之結果如表丨一角波電壓 結果相當一致,得知本丁雖有稍 %明對於離子密IH8, Page 15 475060 V. Description of the invention (13) Wave voltage, find the flicker amplitude (stage Π, steps S203 ~ 206) 5 Then when the triangle wave voltage with amplitude of 10 V, 0 · 〇1 Η z is applied Find the ion density in response to the current (stage Π, steps S207, 208). The calibration curve obtained by measuring the knots of multiple liquid crystal cells is shown in FIG. 11. The ion density is expressed in numbers per cm3 under the assumption that the ions are monovalent and the positive and negative ions are equal. The equation of the obtained calibration curve is as follows. 7V。 Ion density = 2.6 In this example, using the present invention was determined to be 2.7V. It is shown as a rectangle of order 2 · 7V, 10Hz. As shown in Fig. 12, the movable ion 1Ηz can be confirmed, and the flicker amplitude can be obtained (shown. The correction curve [evaluation] can be used to compare the response current at this time to obtain a slight difference. The measurement of the two is valid. X 1012 X flicker amplitude. The liquid crystal cell for measuring the object to be measured is 7. Measure the ion density of these. The flow chart for flicker measurement voltage has been determined (Figure 3). First, apply soil and waves. At that time, One of the flickering waveforms that appears is shown in Figure 12, because flickering has a frequency twice the applied frequency, and there is a second. The frequency of the applied voltage: when the flickering waveform is obtained-for example, the picture shows the flicker of the respective flickering towels. Chang asked for a cut-off degree of 3.13. The results of the ion density obtained from the applied ion density and the self-applied ion density are shown in Table 丨. The results of the angular wave voltage are quite consistent.
第16頁 475060Page 16 475060
五、發明說明(14) 表1 本發明 1.2 5.4 2.4 I.S 3.1 2.9 2.2 三角波 1.4 5.2 2· 1 1.9 2.9 2.8 2.1 (單位:X 1013 個 / cm3) 實施例2 在本實施例具體記述自利用以下所示閃爍之產生而f 生之圖形上之閃爍面積求離子密度之方法。即,在本實施 例’先在階段π求閃爍面積之校正曲線後,在階段m使用 該校正曲線計算離子密度。 在本實施例使用之液晶單元係如以下所示製作之扭轉 向列(TN)液晶單元,藉著在定向方向相差9〇度之基板間夾 ^具有正之電介質異方性之液晶,液晶分子之定向方向連 續的扭轉90度。 液晶單元係用2片玻璃基板夾住chiral向列液晶之三 明治構造。玻璃基板使用了 3cm X 4cm ic〇rning7〇59。和 圖8所示實施例1之情況一樣,形成氧化銦錫膜,在玻璃基 板之中央部形成1 cmx 1⑶之像素電極,而且形成了拉出電 極。形成電極後在其上旋轉塗抹,以9 〇它3 〇分鐘暫時烘烤 3 0刀鐘後,以2 3 0 C烘烤1小時,形成聚醯亞胺定向膜。在 聚醯胺酸使用聚(4、4羥基聯苯撐均苯四曱醯胺酸。 第17頁 475060 五、發明說明(15) 又,用反射偏振光橢圓計所量測定向膜之膜厚係52〇λ 〜5 5 0 Α。 研磨使用Rayon之滾筒以轉速6〇〇轉/min、壓入 。片5:璃二作Λ速A2°mm/S之條件進行1次。研磨後,將2 片?璃基板重豐成在研磨方向正交後,用混合了直( 之間隔粒子之環氧系黏接劑固定。在該單元均質注^ ΪΓΓ广液晶材料後1紫外線硬化樹脂封孔,製;t I Γ Ϊ ^列液晶單元。製作這種液晶單元多片,自施加-響應電流求離子密度,將無法確認離 : 2為透射光強度特性曲線量測用之的 確認了離子電流的作為量測用液晶單元。Β日早7°而將 =,為了自閃爍所產生之面積求離子密度時之校 ,之製㈣’製作了進行強迫污染之液晶單m:: 上述大致一# ’但是在基板相黏之前浸泡於曱醇,改件 浸泡時間製作定向膜表面之污染程度不同之=改變 為权正曲線製作用液晶單元。 ,作 先,以下所示’和實施例1之情況-樣的進行。首 測參照用液晶單元之透射光強[製作了透丁 I -1性曲線。# ’將液晶單元設置於量測強 :〇v〜±lov為止0.1¥間隔施加1〇Ηζ之矩形波,對 面之一部分或整個*照射透射光強度*各自 U凡 :,光而量測。然後,利用儲存於記憶裝置仙内:對 ==加ον時之透射光強度為1〇〇%、施加± 工, 強度為0%把透射光強度變換為透射率。用結光 、透 475060 五、發明說明(16) 一 ^ ^光強度特性曲線將以電壓為橫軸、彡射率為縱軸之 度特性曲線製作成如圖14所示。在該透射光強度特性 曲線將相對於電壓之變化之透射率變化變成最大之點之 壓設為閃爍量測電壓。在圖丨4之情況,推導為3 ·丨v。 其-人,製作用以自閃爍所產生之面積求離子密度之校 正曲線。使用4父正曲線製作用液晶單元,利用圖4之裝置 構造,進打圖2之階段n之處理。即,自施加了振幅丨〇 v、 0 1 Hz之三角波電壓時之響應電流求離子密度後,施加振 幅± 3· 1 V、1 Hz之矩形波電壓,求閃爍面積。由量測多片 液晶單元之結果得到之校正曲線如圖丨5所示。離子密度在 假設離子為一價且正負離子都等量下以每丨cm3之個數表 示。所得到校正曲線之式子如下。 離子密度=2 · 3 X 1 (F X閃爍面積 其次’按照圖3所示階段羾之流程圖,施加± 3.丨v、 1 0Hz之矩形波’和實施例1之情況一樣的確認了離子之存 在。其次’將施加電壓之頻率改為丨Hz,量測閃爍波形, 求閃爍面積。所發生閃爍波形之一例如圖丨6所示。在圖 1 6 ’用1 6 1表示閃爍面積。使用該閃爍面積丨6 1之2個的 和,參照剛才求得之校正曲線,可計算離子密度。 〔評價〕 比較了照這樣所求得之離子密度和自施加三角波電壓 時之響應電流求得之離子密度之結果如表2所示。雖有稍 微之差異,兩者之結果相當一致,得知本發明對於離子密 度量測有效。 mV. Description of the invention (14) Table 1 The present invention 1.2 5.4 2.4 IS 3.1 2.9 2.2 Triangular wave 1.4 5.2 2 · 1 1.9 2.9 2.8 2.1 (Unit: X 1013 pcs / cm3) Embodiment 2 This embodiment is specifically described by using the following The method of calculating the ion density by showing the flicker area on the graph of the occurrence of flicker. That is, in this embodiment ', firstly, the correction curve of the flicker area is obtained in the phase π, and then the correction curve is used in the phase m to calculate the ion density. The liquid crystal cell used in this embodiment is a twisted nematic (TN) liquid crystal cell made as shown below. By interposing substrates that differ by 90 degrees in the orientation direction, liquid crystals with positive dielectric anisotropy, The orientation direction is continuously twisted by 90 degrees. The liquid crystal cell is a Meiji structure in which a chiral nematic liquid crystal is sandwiched between two glass substrates. The glass substrate used 3cm X 4cm icorning705. As in the case of Example 1 shown in Fig. 8, an indium tin oxide film was formed, a pixel electrode of 1 cm x 1 CU was formed in the central portion of the glass substrate, and a pull-out electrode was formed. After the electrode is formed, it is spin-coated and temporarily baked for 30 minutes at 90 minutes and 30 minutes at 230 ° C for 1 hour to form a polyimide alignment film. Poly (4,4-hydroxybiphenylene pyromellitic acid) is used as the polyfluorinated acid. Page 17 475060 V. Description of the Invention (15) In addition, the film thickness of the film is measured with a reflective polarized light ellipsimeter. System 52〇λ ~ 5 50 Α. Grinding using Rayon's rollers at a rotation speed of 600 rpm / min, pressing in. Sheet 5: Glass II is performed once under the condition of Λ speed A2 ° mm / S. After grinding, 2 pieces? The glass substrate was re-integrated in the direction of grinding, and fixed with epoxy adhesives mixed with straight particles. The unit was homogeneously injected. ^ ΓΓwide wide liquid crystal material. 1 UV-curing resin to seal the holes. T I Γ Ϊ ^ column of liquid crystal cells. To make multiple pieces of this type of liquid crystal cell, the ion density can not be confirmed from the applied-response current: 2 is used to measure the transmitted light intensity characteristic curve and confirm the ion current. As a liquid crystal cell for measurement. B is 7 ° as early as the day of the day. In order to check the ion density from the area generated by the flicker, the system is' made a liquid crystal sheet for forced pollution. But soak it in methanol before the substrate sticks, change the soaking time to make the surface of the orientation film dirty Different dyeing levels = change to a liquid crystal cell for making a right curve. First, the following is the same as in the case of Example 1. The first measurement refers to the transmitted light intensity of the liquid crystal cell for reference [made through I -1 sex curve. # 'Set the liquid crystal cell at the measurement intensity: 0.1v up to ± lov. Apply a rectangular wave of 10Ηζ at an interval of 0.1 ¥, one or all of the opposite * irradiation transmitted light intensity * respective U ,: light And measure. Then, use the stored in the memory device: the transmitted light intensity is 100% when the == plus ον is applied, and the intensity is 0% to convert the transmitted light intensity into the transmittance. Use knotting light 5. Transparent description of the invention (16) ^ ^ The light intensity characteristic curve is prepared as shown in Fig. 14 with the voltage as the horizontal axis and the radiographic rate as the vertical axis. The transmitted light intensity characteristic curve is The voltage at which the change in transmittance with respect to the change in voltage becomes the maximum is set as the flicker measurement voltage. In the case of Figure 丨 4, it is deduced as 3 · 丨 v. It is made by people to determine the area generated by flicker Calibration curve of ion density. Use 4 parent positive curve to make LCD The unit uses the device structure of FIG. 4 to perform the processing of stage n of FIG. 2. That is, after the ion density is calculated from the response current when a triangular wave voltage of amplitude 丨 0v and 0 1 Hz is applied, the amplitude ± 3 · 1 is applied. V, 1 Hz rectangular wave voltage, find the flicker area. The calibration curve obtained from the measurement of multiple liquid crystal cells is shown in Figure 丨 5. The ion density is assumed to be one valence and the positive and negative ions are equal. The number of cm3 is expressed. The formula of the obtained calibration curve is as follows. Ion density = 2 · 3 X 1 (FX flicker area. Secondly, according to the flow chart of stage 图 shown in Figure 3, apply ± 3. 丨 v, 10Hz The rectangular wave 'confirmed the existence of ions as in the case of Example 1. Secondly, change the frequency of the applied voltage to 丨 Hz, measure the flicker waveform, and find the flicker area. One example of the flicker waveform that occurs is shown in FIG. 6. The flicker area is represented by 16 1 in FIG. 16 '. The ion density can be calculated by using the sum of the two of the flicker area 丨 6 1 and referring to the calibration curve just obtained. [Evaluation] Table 2 shows the results of comparing the ion density obtained in this way with the ion density obtained from the response current when a triangle wave voltage was applied. Although there is a slight difference, the results of the two are quite consistent, and it is known that the present invention is effective for ion density measurement. m
第19頁 ^^060Page 19 ^^ 060
表2 本發明 2.8 1.4 0.7 1.7 3~ 三角波 2.4 1.7 0.5 1.9~ 3.2 (單位:X 1 013 個 / cm3 ) 實施例3 動之iim 膜電晶體(tft)控制驅 t黑白顯不之主動陣列型液晶顯示面板之離子密度。在 只施例,量測電壓使用中間階電壓,不進行階段工之量 1’階段π之量測使用和實施例2—樣的製作之液晶單元 使用在單元之兩面黏貼偏光板的),只在階段皿使用 主動陣列型液晶顯示面板。 、,輿里測裝置之構造如圖1 7所示,自圖4所示裝置只變更 ,學系,光學系以外之裝置構造和圖4 一樣。被量測之液 晶顯示面板170使用在液晶單元171安裝偏光板172、173 的:在光源1 7 7使用鹵素燈,利用入射側之透鏡1 7 4變換為 平行光’照射於液晶顯示面板1 7 〇表面之一部分或整個 面。在射出側之透鏡175再聚光後,用CCD偵測器176偵 測。 校正曲線製作用液晶單元之離子污染濃度藉著變更放 置於處理環境之時間而令變化。自施加了振幅1 0V、, )· 0 1 Hz之三角波電壓時之響應電流求這些液晶單元之離子 禮、度。此外’閃爍量測用圖5 (a)所示電路進行,在製作校Table 2 The present invention 2.8 1.4 0.7 1.7 3 ~ triangle wave 2.4 1.7 0.5 1.9 ~ 3.2 (Unit: X 1 013 pcs / cm3) Example 3 Active iim film transistor (tft) control driving t black and white active matrix liquid crystal The ion density of the display panel. In the example only, the intermediate voltage is used for the measurement voltage, and the measurement of the phase 1 'is not performed. The measurement of the phase π is the same as that used in Example 2—the liquid crystal cell is fabricated by using polarizing plates on both sides of the cell.) An active matrix type liquid crystal display panel is used in the stage dish. The structure of the telemetry device is shown in Fig. 17 and only the device shown in Fig. 4 is changed. The structure of the devices other than the faculty of science and optics is the same as that of Fig. 4. The liquid crystal display panel 170 to be measured is one in which the polarizing plates 172 and 173 are mounted on the liquid crystal cell 171: a halogen lamp is used for the light source 1 7 7 and a lens 1 7 4 on the incident side is used to convert the light into parallel light to illuminate the liquid crystal display panel 1 7 〇Part of the surface or the entire surface. After the light from the lens 175 on the exit side is refocused, it is detected by the CCD detector 176. The concentration of ionic contamination of the liquid crystal cell used for the calibration curve is changed by changing the time when it is placed in the processing environment. The ion currents and degrees of these liquid crystal cells are obtained from the response current when a triangular wave voltage with an amplitude of 10 V,), and 0 1 Hz is applied. In addition, the flicker measurement is performed using the circuit shown in FIG. 5 (a).
第20頁 五、發明說明(18) 正曲線時也設為和量 校正曲線如圖18 Μ 面板時一樣之條件。所得到之 離子穷;不。权正曲線之式子如下所示。 χ1〇11χ閃襟振幅 此係數和貫施似彳、9 由於施加矩形波時按照液晶▲况相比:::1位數。這是 荷,但是在主動陣列液晶::::::二化供給電極電 荷’離子之漂移w起之Μ降更y夺期間中不供給電極電 在量測用之液晶顯示面板;h'備 的和在將薄膜電晶體A反上羊備利用一叙之製程生產 Λ Ah m JtK 土反和相向基板相黏之前比一船更具 久的放置於處理環境的2種。 叙更長Page 20 V. Description of the invention (18) The same conditions as for the calibration curve are also set when the positive curve is as shown in the 18M panel. The resulting ions are poor; no. The equation of the weighted curve is shown below. χ1〇11χflashing amplitude This coefficient is compared with the constant application like 彳, 9 due to the liquid crystal when a rectangular wave is applied. ▲: 1 digit. This is a charge, but in the active-array liquid crystal :::::: 2, the electrode charge is not supplied during the drift of the ions, and the voltage is not supplied during the measurement period. Before the thin film transistor A was reversed to Yang Bei using a one-step process to produce Λ Ah m JtK soil, it was placed in the processing environment for a longer time than a ship before the substrate was stuck to the opposite substrate. Syria longer
設薄膜電晶體供认夂你主A 施加中間階電壓,素電荷之充電時間為1。。心, 晶面板在此驅動侔;:°fi499:V圖19係對於前者之液 =線求得在該區域之離子密度為約5χ1二二/ 圖2 0係對於後者之含式杜,退+成 敫侗&夕曰、日丨e w ^件曝路於處理J哀境之試件)之在面板 整個面之里測結果。在圖20,黑區 板 ι〇12個/-,白區域係、離子密度 域。酬中,白圈所包圍之區域之離子密 = /cm3 ’用目視也可觀察對比。 1(3個 得知本發明對於產品階層之液晶顯示面板即主 型液晶顯不面板在面内之離子密度分布評價有效。 實施例4 利用本發明之離子密度測定方法檢查主 顯示面板之顯示燒痕之不良。量測用黑白主動Assume that the thin film transistor is applied. Your master A applies an intermediate voltage and the charging time of the prime charge is 1. . The crystal panel is driven here: ° fi499: V Figure 19: For the former liquid = line, the ion density in this region is about 5 × 1 22 / Figure 2 0 For the latter, the formula is + Cheng Xi & Xi Yue, Sun 丨 ^ pieces were exposed to the test piece that handled J Ailing), and the results were measured across the entire face of the panel. In Fig. 20, the black area plate is 1012 /-, the white area system, and the ion density area. In the calculation, the ion density of the area surrounded by the white circle = / cm3 ′ can also be observed and compared visually. 1 (3) It is known that the present invention is effective for evaluating the in-plane ion density distribution of the product-level liquid crystal display panel, that is, the main type liquid crystal display panel. Example 4 Use the ion density measurement method of the present invention to check the display burnout of the main display panel. Bad marks. Black and white active for measurement
第21頁 475060 五、發明說明(19) ' 顯示面板之製作和實施例3 —樣,而且在將基板相黏之前 比實施例3之情況長久的放置於製程内。而且,對^圖2工 所示黑和白之圖案顯示,在黑顯示部分以充電時間i 〇〇 # s、保持期間49· 9ms施加± 10V之脈波電壓,在白顯示部分 不施加電壓。持續顯示48小時後,對於液晶顯示面板整: 面進行中間階電壓之灰顯示時,如圖22所示,發生了累顯 示部分比白顯示部分濃之圖案殘留。 ........ 量測該圖案殘留所伴隨之離子密度之變化。進行圖案 顯示之前之面板面内之離子密度分布如圖23所示。圖 中,黑區域係離子密度不滿5x 1〇12個/cm3,白 ^ 密度個/cm3以上之區域。得知或許因處理 時間長而離子密度比實施例3的高、均勻的分布。剛進 48小時之圖案顯示後之離子密度分布如圖24所示。 愛 顯示部分之離子密度比白顯示部分的低。該離子穷产: 少可能是由於在定向膜表面吸附了離子。而且^向膜 表面吸附離子令液晶中之可動離子密度減少,令係主、 列型液晶顯示面板之重要之電氣參數之電壓保持率上τ 於是,由於局部性電壓保持率上升,在透 異,確認了燒痕。 ^生差 於是,若依據本發明,闵可 .^ i0 ^个知3因可调查液晶面板之舉止和離Page 21 475060 V. Description of the invention (19) 'The display panel is manufactured in the same manner as in Example 3, and it is placed in the manufacturing process for a longer time than in the case of Example 3 before the substrates are adhered. Furthermore, for the black and white pattern display shown in Fig. 2, the pulse voltage of ± 10V is applied to the black display portion for a charging time i 〇〇 # s and the holding period of 49 · 9ms, and no voltage is applied to the white display portion. After the display continued for 48 hours, when the middle-level voltage gray display was performed on the entire LCD display panel, as shown in FIG. 22, a pattern remaining in the accumulated display portion was thicker than the white display portion. ........ Measure the change in the ion density accompanying the pattern residue. Figure 23 shows the ion density distribution in the panel surface before pattern display. In the figure, the black area is an area where the ion density is less than 5 × 10 12 atoms / cm3, and the white density is higher than the density / cm3. It was found that the ion density may be higher and more uniform than that of Example 3 due to the long processing time. The ion density distribution after 48 hours of pattern display is shown in Figure 24. The ion density of the love display is lower than that of the white display. This ion is poorly produced: it may be due to the adsorption of ions on the surface of the alignment film. In addition, the adsorption of ions on the surface of the film reduces the movable ion density in the liquid crystal, which makes the voltage retention rate of important electrical parameters of the main and column-type liquid crystal display panels rise to τ. As a result, the local voltage retention rate increases, and the transmission is different. Burn marks were confirmed. ^ Poor difference Therefore, if according to the present invention, Min Ke. ^ I0 ^ Thinking 3 can investigate the behavior and separation of the LCD panel
子之相關’可區分顯示不I 離子以外所引起的,可;係由f子引起的或是由 查有效之裝£。 對於液晶面板之動4乍分析或檢 此外’本發明不僅可應用於液晶顯示面板,而且也可The correlation of the ions can be distinguished from those caused by non-I ions, but can be caused by the ions or by effective devices. In addition, the present invention can be applied to not only liquid crystal display panels but also liquid crystal display panels.
第22頁 五、發明說____ f用於—般之液晶面板。 發明之效果 如上述所示,因本發 ,係偵测在液晶面板之透 液晶面板之離子密度測定方 =费度的,能以非破壞得知2出現之閃爍之大小後量測離 據本發明,因可得知離子=板内之離子密度。又,若依 區域之離子密度,可提供二在面板面内之分布或在局部 分析有效之裴置。x,:六:液晶面板之動作分析/不良 得、為日 j 1 入右依據本發明,因自問題發生至取 價值=1之離子密度資料為止之時間短’在工業上之利用 圖式簡單說明 (之一圖)1係用以說明本發明之實施形態及實施例之流程圖 (之一圖)2係用以說明本發明之實施形態及實施例之流程圖 圖3係用以說明本發明之實施形態及實施例之流程圖 β係用以說明本發明之實施形態及實施例之量 置之概略構造圖。 里捌衣 三係用以說明本發明之實施形態及實施例之電路圄 和電壓波形圖。 电峪圖 0 m 示用以說明本發明之實施形態之波形圖(之,一)。 圖7 田 1示用以說明本發明之實施形態之波形圖(之二、 圖8孫田、 、 一J ° ’、 以說明本發明之實施例1之圖案圖和剖面圖Page 22 V. Invention ____ f is used for-ordinary LCD panel. The effect of the invention is as described above, because the present invention is to detect the ion density of the liquid crystal panel through the liquid crystal panel. The measuring method is equal to the cost. It can be measured non-destructively after the flicker of 2 appears. The invention, because we can know the ion = ion density in the plate. In addition, depending on the ion density of the region, it is possible to provide two distributions in the panel surface or effective local analysis. x, six: analysis of liquid crystal panel operation / defective results, the day j 1 into the right According to the present invention, because the time from the occurrence of the problem to the value of the ion density data = 1 is short, the industrial use pattern is simple Explanation (one figure) 1 is a flowchart for explaining the embodiments and examples of the present invention (one figure) 2 is a flowchart for explaining the embodiments and examples of the present invention FIG. 3 is used to explain the present inventions The flow chart β of the embodiment of the invention and the embodiment is a schematic structural diagram for explaining the embodiment and the quantity of the embodiment of the invention. The three lines are used to explain the circuit and voltage waveforms of the embodiment and the embodiment of the present invention. The electric diagram 0 m shows a waveform diagram (the first) for explaining the embodiment of the present invention. FIG. 7 is a waveform diagram for explaining the embodiment of the present invention (No. 2, FIG. 8 Sun Tian,, J J ′, to illustrate the pattern diagram and cross-sectional view of Embodiment 1 of the present invention
第23頁 475060 五、發明說明(21) 圖9係用以說明本發明之實施例1之偏光板配置圖。 圖1 0係用以說明本發明之實施例1之特性圖(之一)。 圖11係用以說明本發明之實施例1之特性圖(之二)。 圖1 2係用以說明本發明之實施例1之波形圖(之一)。 圖1 3係用以說明本發明之實施例1之波形圖(之二)。 圖1 4係用以說明本發明之實施例2之特性圖(之一)。 圖1 5係用以說明本發明之實施例2之特性圖(之二)。 圖1 6係用以說明本發明之實施例2之波形圖。 圖1 7係用以說明本發明之實施例3之量測裝置之構造 圖。 圖1 8係用以說明本發明之實施例3之特性圖。 圖1 9係用以說明本發明之實施例3之波形圖。 圖2 0係用以說明本發明之實施例3之離子密度分布 圖。 圖2 1係用以說明本發明之實施例4之圖案圖。 圖2 2係用以說明本發明之實施例4之圖案圖 圖2 3係用以說明本發明之實施例4之離子密度分布 圖。 圖2 4係用以說明本發明之實施例4之離子密度分布 圖。 符號說明 41〜光源; 4 2、4 3〜偏光板; ’ 44〜液晶單元; 45〜光偵測器; 46〜任意波形產生器;47〜示波器;Page 23 475060 V. Description of the invention (21) FIG. 9 is a diagram illustrating the configuration of a polarizing plate according to the first embodiment of the present invention. FIG. 10 is a characteristic diagram (1) for explaining Embodiment 1 of the present invention. FIG. 11 is a characteristic diagram (No. 2) for explaining Embodiment 1 of the present invention. FIG. 12 is a waveform chart (1) for explaining Embodiment 1 of the present invention. FIG. 13 is a waveform diagram (No. 2) for explaining Embodiment 1 of the present invention. FIG. 14 is a characteristic diagram (1) for explaining Embodiment 2 of the present invention. FIG. 15 is a characteristic diagram (No. 2) for explaining Embodiment 2 of the present invention. FIG. 16 is a waveform diagram for explaining Embodiment 2 of the present invention. Fig. 17 is a diagram for explaining the structure of a measuring device according to a third embodiment of the present invention. FIG. 18 is a characteristic diagram for explaining Embodiment 3 of the present invention. FIG. 19 is a waveform diagram for explaining Embodiment 3 of the present invention. Fig. 20 is an ion density distribution diagram for explaining Example 3 of the present invention. FIG. 21 is a pattern diagram for explaining Embodiment 4 of the present invention. Fig. 22 is a pattern diagram for explaining Embodiment 4 of the present invention. Fig. 22 is an ion density distribution diagram for explaining Embodiment 4 of the present invention. Fig. 24 is an ion density distribution diagram for explaining Example 4 of the present invention. Explanation of symbols 41 ~ light source; 4 2, 4 3 ~ polarizing plate; ′ 44 ~ liquid crystal unit; 45 ~ light detector; 46 ~ arbitrary waveform generator; 47 ~ oscilloscope;
第24頁 475060 五、發明說明(22) 48〜資料處理裝置; 7 1〜透射率變化之飽和 7 2〜最小透射率; 74〜閃爍面積; 82〜像素電極; 84〜聚醯亞胺; 8 6〜向列液晶; 9 3〜摩擦方向; 1 7 0〜液晶顯示面板; 1 7 2、1 7 3〜偏光板; 17 6〜(^0偵測器; 49〜記憶裝置; 狀態區域; 73〜閃爍振幅; 8 1〜玻璃基板; 8 3〜拉出電極; 85〜環氧系黏接劑; 9 1、9 2〜偏光板之偏光方向; 1 6 1〜閃燦面積; 1 71〜液晶單元; 174、175〜透鏡; 1 7 7〜光源。Page 24 475060 V. Description of the invention (22) 48 ~ data processing device; 7 1 ~ saturated saturation of transmittance 7 2 ~ minimum transmittance; 74 ~ flicker area; 82 ~ pixel electrode; 84 ~ polyimide; 8 6 ~ nematic liquid crystal; 9 3 ~ rubbing direction; 1 70 ~ liquid crystal display panel; 1 7 2, 1 7 3 ~ polarizing plate; 17 6 ~ (^ 0 detector; 49 ~ memory device; status area; 73 ~ Flicker amplitude; 8 1 ~ glass substrate; 8 3 ~ pull-out electrode; 85 ~ epoxy-based adhesive; 9 1, 9 2 ~ polarizing direction of polarizing plate; 1 6 1 ~ flash area; 1 71 ~ liquid crystal Unit; 174, 175 ~ lens; 1 7 7 ~ light source.
第25頁Page 25
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