TW473944B - Method for forming conducting bump on contact pad - Google Patents
Method for forming conducting bump on contact pad Download PDFInfo
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- TW473944B TW473944B TW090107010A TW90107010A TW473944B TW 473944 B TW473944 B TW 473944B TW 090107010 A TW090107010 A TW 090107010A TW 90107010 A TW90107010 A TW 90107010A TW 473944 B TW473944 B TW 473944B
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- solder paste
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- pressure difference
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- mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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Abstract
Description
473944 五、發明說明(1) |473944 V. Description of the invention (1) |
I 發明領域: ' \ 本發明與一種積體電路封裝製程有關,特別是有關於 | 一種新的覆晶凸塊金屬(fl ip Chip bump)形成於接觸墊 i (bonding pad)的技術,可以增加凸塊金屬之高度並使凸 丨/ 塊形成製程穩定且成本更低。 | |I Field of invention: '\ The present invention relates to an integrated circuit packaging process, and particularly relates to | a new technology of forming a flip ip chip bump on a bonding pad i, which can increase The height of the bump metal makes the bump formation process stable and lower cost. | |
發明背景: I 導體^著極大型積體電路(ULSI)製程技術地世代更替,半 度,尺寸不但因元件縮小而提昇晶圓上元件之積集 i薄翅因此降低成本’創造利潤。除此之外,客戶對: 關鍵積體^挑剔也是積體電路快速發展的一驅動力’其中 如何提高尺寸大小的晶片封裝技術也成一關鍵指標。 片夠薄了都I片數目於一封裝體,或者如何使欲封裝的晶 傳統凸塊形成7封裝技術中,業者互相較勁的標的之一。 完成積體‘路,程係先準備一半導體晶圓,半導體晶圓已 鍍法、化學書氣& ’且已達露出焊墊的護層階段。再以濺 護層上之i二相沉積法或PECVD法形成凸塊下金屬(UBM)於I 機披覆-層$塾(b〇nd ing Pad)配上。隨後,以乾膜彼覆丨· 影技術,以^ ^ °乾膜厚約1 2 0# m ;接著,對乾膜施以顯 錫層於凸塊$ 凸塊的位置。隨後施以電鍍處理以形成焊 同厚度之凸塊金屬UBM上。去除乾膜後’即得約與乾膜相 '。再進行迴焊(ref low)以成長球狀導電凸 · ·Background of the Invention: I conductors have been replaced by generations of ultra-large integrated circuit (ULSI) process technology. Half the size, not only increases the component accumulation on the wafer due to the shrinking of the components. I Thin fins therefore reduce costs and create profits. In addition, customers are critical: critical picks are also a driving force for the rapid development of integrated circuits, and how to increase the size of the chip packaging technology has become a key indicator. The chip is thin enough, and the number of chips is one in a package, or how to make the crystal to be packaged. Traditional bump formation is one of the targets of the packaging technology. To complete the integration process, the system first prepares a semiconductor wafer. The semiconductor wafer has been plated, chemically modified, and has reached the stage of protecting the solder pads. Then, a two-phase deposition method or a PECVD method on the sputter layer is used to form a metal under bump (UBM), which is then coated on a laminating pad of the machine. Subsequently, a dry film coating technique was used to dry the film to a thickness of about 1200 ° m. Then, a tin layer was applied to the position of the bump $ on the dry film. A plating process is subsequently applied to form bump metal UBM of the same thickness. After removing the dry film ', it is approximately the same as the dry film'. Reflow (ref low) to grow spherical conductive bumps
第4頁 473944Page 4 473944
五、發明說明(2) 塊。 除了上述以乾膜圖案定義金屬凸塊位置, 程的技術以形成導電凸塊的方法之外,另有丄配合電鍍製 的方式,在凸塊下金屬上形成導電凸塊。方、、種網板印刷 將已完成凸塊下金屬(UBM)製程之晶圓栽入網去如下,首先 台。網板上的網目配合凸塊下金屬的位置。、”板印刷平 刀將錫膏刮過網板,當錫膏和凸塊下金屬接接著’再以刮 |住。待取下網板後每一凸塊下金屬就會有锡=後就會沾枯 i上。只要再進行迴焊就可以長成球狀導電 貧附著於其 j ^塊。 ! 另一種和上述刮刀式的網板印刷方式,^ i壓力式的網板印刷。這種網板印刷具有一係以一種具有 I可以控制上面壓力pi大而下面壓力P2小,再7印刷頭,它 |式使錫膏沾粘於凸塊下金屬。如此,將提以類似到刀方 板印刷方式更為穩定的網板印刷。 ,、比刮刀式的網 上述的習知技術,有一較為業界所關心 5的厚度受到網孔模板(stenci 1託3}〇1〇高户、缺點是 5 一,刮除模板高度以上之錫膏的示意圖。圖5 = c 模板同度以上之錫膏後的示意圖所示。此外, = 錫膏也合部。否貝1卜當孔洞有斜度時網板拉起 妫賞也s。卩分被拉起來而降低錫膏之 沾不到錫膏。舲冰 a 又仓主4分 此外’使用後尚必須清除罩幕孔洞邊殘 473944 五、發明說明(3) 錫膏,否則下次即不能再用。 有鑑於上述問題,本發明將提出解決的方案,高度不 會受限,且更均勻,並且錫膏罩幕孔洞邊殘留的錫膏問題 也可以一併獲得解決。 發明目的及概述: 本發明之目的係提供一種網印凸塊形成的方法。 本發明之另一目的係提供一種利用錫膏槽與晶圓相對 壓差,結合超音波振盪及晶圓向下的方式穩定成長網印凸 塊的方法。 本發明揭露一種凸塊製程的方法,在本發明方法中應 用網印的方法,利用錫膏槽和晶圓兩者正壓差的差異性自 網板罩幕擠下錫膏,結合超音波水平方向振盪以使錫膏和 凸塊下金屬接觸性更佳,及垂直方向振盪的超音波,使錫 膏自錫膏槽下的罩幕流下時更為順暢。此外,再配合晶圓 向下運動的方式以使錫膏凸塊成長至預定的高度,最後再 結合網板的超音波水平、垂直方向振盪及調整錫膏槽和晶 圓兩者為負壓差而切斷錫膏。因此,只要適當調配穩定值 之壓差值及晶圓向下移動速度,便可確保品質穩定。 發明詳細說明:5. Description of the invention (2) block. In addition to the above-mentioned method of defining the position of the metal bumps with the dry film pattern, Cheng's technology uses a method of forming conductive bumps, and in addition, the conductive bumps are formed on the metal under the bumps by means of electroplating. Square, seed screen printing The wafers that have completed the UBM process are inserted into the net as follows, first. The mesh on the screen matches the position of the metal under the bump. "" The plate printing flat knife scrapes the solder paste over the screen. When the solder paste and the metal under the bumps are connected, then "scrape | stop. After the screen is removed, the metal under each bump will have tin = later." It will stick to i. As long as re-soldering is performed, it can grow into a spherical conductive body and adhere to its ^ block.! Another and the above-mentioned doctor blade screen printing method, ^ i pressure screen printing. This kind of Screen printing has a system with I that can control the upper pressure pi is large and the lower pressure P2 is small, and then 7 printing heads, which makes the solder paste stick to the metal under the bump. So, it will be similar to the knife side The screen printing method is more stable for screen printing. Compared with the blade-type screen, the above-mentioned conventional technology has a thickness that is more concerned by the industry. 5 The thickness of the screen template (stenci 1 to 3) is high. The disadvantage is that 5 First, the schematic diagram of scraping the solder paste above the template height. Figure 5 = c The schematic diagram of the solder paste above the same degree of the template. In addition, = the solder paste is also the joint. No When the hole has a slope The screen is pulled up and the reward is also s. The points are pulled up and the solder paste is lowered and the solder paste is not in contact with the solder paste. 舲 冰 a Another warehouse owner 4 In addition, it is necessary to remove the remaining edges of the mask holes after use. 473944 5. Description of the invention (3) Solder paste, otherwise it cannot be used again. In view of the above problems, the present invention will propose a solution that will not limit the height. And it is more uniform, and the problem of the remaining solder paste on the side of the hole of the solder paste mask can also be solved together. OBJECTS AND SUMMARY OF THE INVENTION The object of the present invention is to provide a method for forming screen printing bumps. Another object of the present invention is to Provided is a method for stably growing screen-printed bumps by using a relative pressure difference between a solder paste tank and a wafer, and combining ultrasonic oscillation and wafer downward. The present invention discloses a method for bump process, and applies the net in the method of the present invention. The method of printing uses the difference in positive pressure difference between the solder paste tank and the wafer to squeeze the solder paste from the screen mask, and combines ultrasonic horizontal oscillation to make the solder paste and the metal under the bumps have better contact. The ultrasonic wave oscillating in the vertical direction makes the solder paste flow more smoothly when it flows down from the mask under the solder paste tank. In addition, it is matched with the downward movement of the wafer to make the solder bumps grow to a predetermined height, and finally Combine the stencil's ultrasonic horizontal and vertical oscillations and adjust the solder paste tank and wafer to a negative pressure difference to cut the solder paste. Therefore, as long as the pressure difference value of the stable value and the downward movement speed of the wafer are appropriately adjusted, It can ensure the stable quality. Detailed description of the invention:
第6頁 473944 五、發明說明(4) 有鑑於如發明背景所述,傳統網印之凸塊形成製程, 。 不但形成於凸塊下金屬上之錫膏高度受限,且使用後必須Page 6 473944 V. Description of the invention (4) In view of the bump forming process of traditional screen printing as described in the background of the invention,. Not only is the height of the solder paste formed on the metal under the bump limited, but it must be used after use.
I 清除罩幕孔洞邊殘留的錫膏。本發明利用網印過程中,以 I 一面擠出錫膏一面垂直向下移動晶圓之方法,長出預計高 度之凸塊。此外,配合超音波的使用,以使得錫膏自罩幕 j. 孔流出更順暢,且由於切斷錫膏時係應用負壓差,並配合 「 超音波振動,使得清洗罩幕的情況,得以避免。 請參考圖二的示意圖,首先載入一晶圓10 0於一錫膏 1 網印平台上。一錫膏槽110在上,錫膏槽110配合錫膏罩幕 12 0用以網印錫膏(當然也可以是其他具導電性之漿液,例 : 如具導電性的高分子)。其中晶圓100已完成積體電路製 程、護層,並且已完成接觸墊之製作(接觸墊上已形成凸 ; 塊下金屬105(UBM)或不形成凸塊下金屬皆可),以待進行 j 凸塊製程。圖上所示為晶圓其中之一 UBM10 5待形成凸塊的 示意圖。此外,錫膏槽11 0内裝載的是混合以助溶劑 (f 1 ux)的顆粒狀錫錯合金球,每一顆粒大小約為十幾至二 十幾// m。I Remove the remaining solder paste from the edge of the mask hole. The present invention utilizes a method in which the solder paste is extruded on the I side and the wafer is moved vertically downwards during the screen printing process to grow bumps of an expected height. In addition, with the use of ultrasonic waves, the solder paste flows out of the mask j. Holes more smoothly, and because the negative pressure difference is applied when cutting the solder paste, and the "supersonic vibration, the cleaning of the mask can be achieved. Avoid. Please refer to the schematic diagram of Figure 2. First load a wafer 100 on a solder paste 1 screen printing platform. A solder paste tank 110 is on top, and the solder paste tank 110 is matched with the solder mask 120 for screen printing. Solder paste (Of course, it can also be other conductive paste, such as conductive polymer). The wafer 100 has completed the integrated circuit process, protective layer, and the production of contact pads (the contact pads have Form bumps; metal under bump 105 (UBM) or metal under bumps is not required), j bump process to be carried out. The figure shows a schematic diagram of one of UBM 10 5 wafers to be bumped. In addition, The solder paste tank 110 is filled with granular tin alloy balls mixed with a co-solvent (f 1 ux), and each particle has a size of about ten to twenty // m.
I 接著,調整錫膏網印機台之錫膏槽1 1 0罩幕1 2 0孔與凸 塊下金屬1 0 5之間隙及調整錫膏罩幕由上而下之壓力p 1與 晶圓平台由下而上之壓力P2,使呈P1大於P2的狀態,以使 錫膏1 2 5僅小部分露出,以更精確校準每一錫膏罩幕1 2 0孔 私I Next, adjust the gap between the solder paste tank 1 1 0 mask 12 on the solder paste screen printer and the metal 105 under the bump and adjust the pressure p 1 from the top to the bottom of the solder mask and the wafer. The pressure P2 from the bottom to the top of the platform is in a state where P1 is greater than P2, so that only a small part of the solder paste 1 2 5 is exposed, in order to more accurately calibrate each solder paste curtain 120 holes.
第7頁 473944 五、發明說明(5) 與凸塊下金屬10 5之位置。一般而言兩者之間正壓差約為 5 - 50psi。為達到壓力的調整,可以有各種方式,晶圓平 台載入室和錫槽分別在不同的室(chamber )内例如調整錫 膏槽110内錫膏高度以調整pi,導入氣體於晶圓平台載入 室以調整環境壓力等。為使錫膏槽110之錫膏更易流出, i 此時可選擇性的利用超音波作垂直方向振盪1 2 8。除此之 外,調整罩幕1 2 0孔大小也可以增加其流動性,而錫膏槽 内溫度。適當控制可降低熱膨脹的問題,以一較佳的實施Page 7 473944 V. Description of the invention (5) and the position of the metal under the bump 105. Generally speaking, the positive pressure difference between the two is about 5-50psi. In order to achieve pressure adjustment, there can be various methods. The wafer platform loading chamber and the solder tank are respectively in different chambers. For example, the height of the solder paste in the solder tank 110 is adjusted to adjust pi, and the gas is introduced into the wafer platform. Enter the room to adjust the ambient pressure, etc. In order to make the solder paste in the solder paste tank 110 flow out more easily, i can selectively use ultrasonic waves to oscillate vertically 1 2 8 at this time. In addition, adjusting the 120 hole size of the mask can also increase its fluidity, and the temperature in the solder paste tank. Proper control can reduce the problem of thermal expansion with a better implementation
I :例而言,罩幕1 2 0孔大小約為1 2 0 // m,這種大小約可以讓 6 - 7個顆粒錫膏同時流出。而錫膏槽内錫膏溫度約為1 〇 - 4 0 °C。 請參考圖三所示的示意圖。升高晶圓平台以使錫膏與 丨 凸塊下金屬10 5接觸露出之錫膏125,以沾粘錫膏。此時可 ; |選擇性的利用超音波作水平橫向振盪129,以使具粘稠性 的錫膏和凸塊下金屬10 5沾粘條件更佳,並可避免後繼晶 | 圓平台下移,錫膏成長時斷開。水平橫向振盪12 9距離只 丨 要達到1 -5// m即可。 丨 接著,請參考圖四所示的示意圖,將晶圓平台緩慢向 i 下移動,同時,仍然控制P1大於P2,壓差約為5-50psi, 以使沾粘之錫膏1 2 5高度相對向上成長至預定厚度。晶圓 平台緩慢向下移動的速度約為1-1 0/z m/s以避免斷開;同 樣地,可選擇性的利用超音波作垂直方向振盪1 2 8,以使I: For example, the size of the 120 holes in the mask is about 12 0 // m. This size allows about 6-7 particles of solder paste to flow out at the same time. The temperature of the solder paste in the solder paste tank is about 10-40 ° C. Please refer to the diagram shown in Figure 3. Raise the wafer platform so that the solder paste and the under bump metal 105 contact the exposed solder paste 125 to stick the solder paste. At this time; | Selectively use ultrasonic waves for horizontal and horizontal oscillations 129 to make the sticky solder paste and the metal under the bump 10 5 better adhesion conditions, and to avoid subsequent crystal | round platform down, Disconnect when the solder paste grows. The horizontal and horizontal oscillation is 12 9 distances only need to reach 1-5 // m.丨 Next, please refer to the schematic diagram shown in Figure 4, and slowly move the wafer platform down to i, while still controlling P1 to be greater than P2, and the pressure difference is about 5-50psi, so that the sticky solder paste 1 2 5 is relatively high Grow upward to a predetermined thickness. The speed of the wafer platform moving slowly downward is about 1-1 0 / z m / s to avoid disconnection; similarly, ultrasonic waves can be selectively used to oscillate vertically 1 2 8 so that
第8頁 473944 五、發明說明(6) |Page 8 473944 V. Description of Invention (6) |
I 錫膏槽110之錫膏流出更順暢。當然,也可以增加水平方 向的超音波振動128,以利於錫膏流出更為順暢。沾粘於 , 凸塊下金屬105之錫膏高度約為1 0 0 - 1 5 0/z m即可。 ! 最後,請參考圖五所示的示意圖,在達到預定之錫膏 高度時,即改變P1及 P2的壓力狀態,使壓力P2大於PI, ! I · 1 以擠回錫膏,兩者之間負壓差約為10-80 psi。為避免仍 有小部分錫膏殘留,配合超音波垂直振動方向或/及水平 振動,即可完全避免錫膏的殘留,在凸塊下金屬10 5上錫 I膏的頂端,便會縮小而形成頸部130,最後,在晶片同時 下降時,順勢斷開,圖五所示即為該頸部即將斷開時的示 意圖0 广 本發明以較佳實施例說明如上,而熟悉此領域技藝 r 者,在不脫離本發明之精神範圍内,當可作些許更動潤 飾,其專利保護範圍更當視後附之申請專利範圍及其等同 領域而定。I The solder paste flowing out of the solder paste tank 110 is smoother. Of course, you can also increase the ultrasonic vibration 128 in the horizontal direction to facilitate the smoother flow of solder paste. The height of the solder paste of the metal 105 under the bump is about 100-150 / z m. Finally, please refer to the schematic diagram shown in Figure 5. When the predetermined solder paste height is reached, the pressure states of P1 and P2 are changed so that the pressure P2 is greater than PI.! I · 1 to squeeze back the solder paste, between The negative pressure differential is approximately 10-80 psi. In order to avoid that there is still a small part of the solder paste residue, in conjunction with the ultrasonic vertical vibration direction or / and horizontal vibration, the solder paste residue can be completely avoided. The top of the solder paste on the metal 105 under the bump will shrink and form. Neck 130. Finally, when the wafer is lowered at the same time, it will be disconnected. Figure 5 is a schematic diagram of the neck when it is about to be disconnected. The present invention has been described above with a preferred embodiment, and those skilled in the art are familiar with this field Without deviating from the spirit of the present invention, when some modifications can be made, the scope of patent protection should depend on the scope of the attached patent application and its equivalent fields.
第9頁 473944 圖式簡單說明 圖式簡單說明: 本發明的較佳實施例將於下列之說明文字中輔以下列 圖形做更詳細的闡述: 圖一 A及B分別為依據傳統方法刮除模板高度以上之錫 膏前後的示意圖。 圖二顯示依據本發明之方法,載入晶圓,以準備形成 導電凸塊於UBM的示意圖。 圖三顯示依據本發明之方法,導電凸塊沾粘於UBM的 示意圖示意圖。 圖四顯示依據本發明之方法,沾粘於UBM的導電凸塊 隨著平台下降而成長的示意圖。 圖五顯示依據本發明之方法,壓力調整為負壓差以使 導電凸塊斷開的示意圖。 圖號對照表: 晶圓 100 錫膏槽 110 錫膏罩幕 120 凸塊下金屬 105CUBM) 頸部 130 露出之錫膏 125 超音波垂直方向振盪 128 超音波水平橫向振盪 129Page 473944 Brief description of the drawings Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text supplemented by the following figures: Figures A and B are respectively scraping templates according to traditional methods Schematic diagram of solder paste above and below. FIG. 2 shows a schematic diagram of loading a wafer to prepare a conductive bump for UBM according to the method of the present invention. FIG. 3 is a schematic diagram showing that the conductive bump adheres to the UBM according to the method of the present invention. FIG. 4 is a schematic diagram showing that the conductive bump adhered to the UBM grows as the platform descends according to the method of the present invention. Fig. 5 shows a schematic diagram of the method according to the present invention, in which the pressure is adjusted to a negative pressure difference to disconnect the conductive bumps. Drawing number comparison table: Wafer 100 Solder paste tank 110 Solder paste mask 120 Metal under bump 105CUBM) Neck 130 Solder paste exposed 125 Ultrasonic horizontal oscillation 128 Ultrasonic horizontal oscillation 129
第10頁Page 10
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TW090107010A TW473944B (en) | 2001-03-23 | 2001-03-23 | Method for forming conducting bump on contact pad |
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TW090107010A TW473944B (en) | 2001-03-23 | 2001-03-23 | Method for forming conducting bump on contact pad |
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