473836 案號 8910705(1 曰 修正 五、發明說明（1) 化合物半導體元件在通訊及顯示器方面有廣泛的用途，近 年來由於對藍光光源的需求，氮化鎵系丨丨丨—V族化合物半 導體（GaN based III - V compound semiconductor device)更是成為研發的重點。氮化鎵系丨丨丨—v族化合物半 導體一般主要組成成份為氮化銦鎵、氮化鋁鎵及氮化鋁銦 鎵。目前成長氮化鎵系I Π - V族化合物半導體所使用最有 效率的基板為三氧化二鋁單晶基板，但是由於此種基板並 不導電’因此製作元件，例如發光二極體，其正極 (P-contact)及負極（n-contact)均寧至同一面上，且經由 歐姆接觸層（ohmic contact layer)連接至發光二極體之p 層（p-type layer)及η 層（n -type layer)。由於電極一般 係以金屬材料製成，其厚度極薄以避免遮光，因此歐姆接 觸層之電性對於此化合物半導體製成之發光二極體效率影 響極大。尤其是此類半4導體元件之氮化鎵p層的電洞動性 (hole mobility)低，造成p層的阻抗高，因此電洞流的擴 散成為元件製造上的重點。 美國專利No· 5, 5 63, 422由日本Nichia公司所提出的專利揭 不一種氮化鎵系I I I -V族化合物半導體製造方法，其中係》 將金屬薄膜鍵在P層上，並加以退火（annealing)處理以遠 加電動流之擴散’由於與受體（acceptor)鍵結之氫原子在 退火過程中會被驅離出受體，因此受體雜質可以被活化， 以改善歐姆接觸層之電性。但是一般鎳、鉻、鋁及金等金 屬在P層的氮化鎵上，其歐姆接點的效率及阻抗並無明顯 改善。因此本發明之目的即在提供一種氮化鎵系化合物半 導體元件電極製造方法，以改善其歐姆接觸層之電性。473836 Case No. 8910705 (1) Amendment V. Description of the Invention (1) Compound semiconductor devices have a wide range of uses in communications and displays. In recent years, due to the demand for blue light sources, gallium nitride-based 丨 丨 丨 -V compound semiconductors ( GaN based III-V compound semiconductor device) has become the focus of research and development. GaN-based 丨 丨 丨 —The general composition of v-type compound semiconductors is indium gallium nitride, aluminum gallium nitride, and aluminum indium gallium nitride. At present The most efficient substrate used for growing gallium nitride-based I Π-V compound semiconductors is an alumina tri-crystalline single crystal substrate, but because this type of substrate is not conductive, so components are made, such as light-emitting diodes, whose positive electrode ( P-contact) and negative electrode (n-contact) are both on the same surface, and connected to the p-type layer and η-layer (n-type) of the light emitting diode through an ohmic contact layer layer). Since the electrode is generally made of a metal material, its thickness is extremely thin to avoid shading, so the electrical properties of the ohmic contact layer have a great influence on the efficiency of the light emitting diode made of this compound semiconductor. In particular, the gallium nitride p-layer of such semi-conductor elements has low hole mobility, resulting in high p-layer impedance, so the diffusion of hole current has become the focus of device manufacturing. US Patent No. 5 , 5, 63, 422 A patent proposed by the Japanese company Nichia discloses a method for manufacturing a gallium nitride-based III-V group compound semiconductor, in which the metal thin film is bonded to the P layer and annealed to further increase The diffusion of electromotive current 'is because the hydrogen atoms bonded to the acceptor will be driven out of the acceptor during the annealing process, so the acceptor impurities can be activated to improve the electrical properties of the ohmic contact layer. Generally nickel, Chromium, aluminum, gold and other metals have no significant improvement in the efficiency and impedance of their ohmic contacts on the gallium nitride of the P layer. Therefore, the object of the present invention is to provide a method for manufacturing a gallium nitride-based compound semiconductor element electrode in order to Improve the electrical properties of its ohmic contact layer.
五、發明說明（2) :達’本發明揭示一種氮化鎵化合物半導體製 加雷二動：擴散法將擴散鈹擴散至氮化鎵P層内，即可详 加電洞動性，在後續製裎中 I j曰 阻抗歐姆接觸層之電極。σ ’ ρ可％成具有低 ，使士發明之步驟，功效及特點更為人 並配合附圖，說明本發明之較佳實施方式。解⑼舉實例 實施例詳細說明： 參見第-圖，為說明本發明『氮化鍊化合物半導體製造方 :釙：件ί構圖。本發明之氮化鎵化合物半導體製造 Γ- 1 氣化嫁化合料導體元件（例*氮化鎵為發 先-極體）之Ρ型電極製造方法加以改良。參見此圖， 化鎵系發光二極體主要係包含位在基板100上的一Ν型氮化 =0及疊於其上的一ρ型氮化鎵層12〇，，中基板1〇〇可 為監寳石基板以具有較佳效率，但是由於此種基板並不導 電，因此發光二極體之電極要做在元件之正面。如此圖所 :’在形成Ν型氮化鎵層110及疊於其上的ρ型氮化鎵層120 4 ，係用反應離子蝕刻法（reactive ion etch ;RIE)將队 型氮化鎵層110及疊於其上的P型氮化鎵層12〇形成一平 狀，.其中，由於p型氮化鎵層12〇的電洞移動率（h〇le mobi 11 ty)低，因此亦造成p型氮化鎵層12〇的阻抗高。接 續在整個P型氮化鎵層12〇上再形成一 p型電極122，再於p 型電極122之上形成一p型電極焊墊124。相同於上述動 作，於露出的N型氮化鎵層110之上形成一N型電極112。缺 後，再於N型電極112上及p型電極焊墊124上打上接線，即 473836V. Description of the invention (2): The present invention discloses a gallium nitride compound semiconductor made of mine two action: the diffusion method diffuses beryllium beryllium into the gallium nitride P layer, and the electrical hole mobility can be added in detail. In the system, Ij is the electrode of the impedance ohmic contact layer. σ ′ ρ can be low, so that the steps, effects and features of the invention are more human. With reference to the drawings, the preferred embodiments of the present invention will be described. Exemplary examples Detailed description of the embodiments: Refer to FIG.- FIG., For illustrating the present invention, "Nitride chain compound semiconductor manufacturer: 钋: Pieces 构 pattern. The method of manufacturing a P-type electrode for manufacturing a Γ-1 vaporized compound conductor element (for example, * gallium nitride is a precursor-polar body) for manufacturing a gallium nitride compound semiconductor of the present invention is improved. Referring to this figure, the gallium-based light-emitting diode mainly includes an N-type nitride = 0 on the substrate 100 and a p-type gallium nitride layer 120 stacked on the substrate 100, and the substrate 100 may To monitor the gem substrate, it has better efficiency, but because this substrate is not conductive, the electrode of the light emitting diode should be on the front side of the element. As shown in the figure: 'In forming the N-type gallium nitride layer 110 and the p-type gallium nitride layer 120 4 stacked thereon, the reactive gallium nitride layer 110 is formed by a reactive ion etch (RIE) method. And the P-type gallium nitride layer 12 stacked thereon forms a flat shape. Among them, the p-type gallium nitride layer 12 has a low hole mobility (hole mobi 11 ty), so it also causes a p-type The gallium nitride layer 12 has a high impedance. A p-type electrode 122 is formed on the entire P-type GaN layer 120, and a p-type electrode pad 124 is formed on the p-type electrode 122. The same operation as above is performed to form an N-type electrode 112 on the exposed N-type GaN layer 110. After missing, wire on N-type electrode 112 and p-type electrode pad 124, that is, 473836
B ϋ 8_7㈣ 五、發明說明（3) 可構成通路。 :於ρ插型哲氮化鎵層的電洞移動率低，本發明之要旨即在提 阻抗歐姆接觸心；：電洞移動率’即可形成具有低 率。來目笛s電極，增加虱化鎵化合物半導體元件之效 造方法i:f，為依據本發明『氣化鎵化合物半導體製 列步驟』：&佳具體實例之淹•程，本發明之方法包含下 1·在P型氮化鎵層（P層）上鍍上—异鈹金屬戋其人全 如為鈹金合金； 盾級金屬或其合金’例 2化下放置3-15分鐘::·將鈹擴散到該p型氮 化稣層，然後再將表面清除乾淨，· 3·蒸鍍3 0-50A之舞及70_HnA夕二 下進扞3 h八2 鈹合金；再於氮氣環境之 溫處理’即可製成透明導電膜。 範圍内較i。中，擴散及高溫處理在溫度4 0 0- 6 0 0 t ί二ί Γ圖蚀為依據本發明所製成電極之電阻量測結果。 製程時’電極之電阻為6.25歐姆，在加 m發明之皱擴散製程後’電極之電阻為125歐姆* 僅^原來之五分之一，因此可以看出本發 ^ 幅降鮮型氮化鎵層之歐姆接觸層電阻，有效改進大 極體之效率。 綜上所述，#由本發明之『氮化鎵化合物半導體製造方 法』，可以大幅降低P型氮化鎵層之歐姆接觸層電阻，乃 不可夕彳于之發明，爰依法提出申請之，請詳查並准予本B ϋ 8_7㈣ 5. Description of the invention (3) Can constitute a channel. : The hole mobility of the p-type gallium nitride layer is low, and the gist of the present invention is to increase the impedance ohmic contact; the hole mobility can be formed to have a low rate. Come to the eyepiece s electrode to increase the efficiency of the gallium compound semiconductor device manufacturing method i: f, in accordance with the present invention "steps of preparing gallium vaporized compound semiconductor": & the process of the specific embodiment, the method of the present invention Including the following: 1. P-type gallium nitride layer (P layer) plating-isoberyllium metal, which is as good as a beryllium gold alloy; Shield grade metal or its alloy 'Example 2 and left for 3-15 minutes: Diffusion of beryllium into the p-type nitrided layer, and then clean the surface, 3. Evaporate the dance of 3 0-50A and 70_HnA, and then defend 3 h and 8 2 beryllium alloy; then in the nitrogen environment 'Warm treatment' can be made into a transparent conductive film. The range is more than i. In the process of diffusion and high temperature treatment at a temperature of 4 0-6 0 0 t Γ Γ is the result of resistance measurement of an electrode made according to the present invention. During the manufacturing process, the resistance of the electrode was 6.25 ohms, and the resistance of the electrode was 125 ohms after adding the wrinkle diffusion process invented by the invention. * Only one-fifth of the original, so it can be seen that the present invention has a reduced freshness type gallium nitride The ohmic contact resistance of the layer effectively improves the efficiency of the large body. To sum up, # "The manufacturing method of gallium nitride compound semiconductor" of the present invention can greatly reduce the resistance of the ohmic contact layer of the P-type gallium nitride layer. This is an invention that cannot be left behind. You can apply for it according to the law. Please refer to it for details. Investigate and grant this
473836 —--^一年月曰 鉻不 五、發明說明（4) ' ·—" -- 案專利，以保障該發明者之權益，若鈞局貴審查委員有 任何稽疑，請不吝來函指示。 一 按，以上所述，僅為本發明之一具體實施例，惟本發明之 材料、流程並不侷限於此，因此任何熟悉此項技藝者在本 發明之領域内，所實施之變化或修飾皆被涵蓋本$之專利 範圍内。 圖示說明： 第一圖為說明依據本發明『氮化鎵仳合物半導體製造方 法』可應用元件之結構圖； 第二圖為依據本發明『氮化鎵化合物半導體製造方法』之 一較佳具體實例之流程； 第二圖為依據本發明所制 - W 1成電極之電阻量測結果。 圖號說明： I 0 0基板 II 〇 N型氮化鎵層 11 2 N型電極 〜 1 2 Ο P型氮化鎵層 1 22 P型電極 、 124 P型電極焊墊473836 --- ^ One month and month, chromium is not five, the description of the invention (4) '·-"-case patent to protect the rights of the inventor, if you have any suspicions, please contact us. Instructions. One press, the above is only one specific embodiment of the present invention, but the materials and processes of the present invention are not limited to this. Therefore, any person skilled in the art can implement changes or modifications in the field of the present invention. All are covered by the patent scope of this $. Explanation of the diagram: The first diagram is a structural diagram illustrating an applicable element according to the "manufacturing method of a gallium nitride compound semiconductor" according to the present invention; the second diagram is one of the "manufacturing methods of a gallium nitride compound semiconductor" according to the present invention. The flow of a specific example; The second figure is the resistance measurement result of the -W 1-component electrode made according to the present invention. Description of drawing number: I 0 0 substrate II 〇 N-type GaN layer 11 2 N-type electrode ~ 1 2 〇 P-type GaN layer 1 22 P-type electrode, 124 P-type electrode pad
473836 _案號89107050_年月日__ 圖式簡單說明 圖不說明· 第一一圖為說明依據本發明『氮化鎵化合物半導體製造方 法』可應用元件之結構圖； 第二圖為依據本發明『氮化鎵化合物半導體製造方法』之 一較佳具體實例之流程； 第三圖為依據本發明所製成電極之電阻量測結果。 圖號說明： I 0 0基板 — II 0 N型氮化鎵層 、 1 12 N型電極 1 2 0 P型氮化鎵層 1 2 2 P型電極 124 P型電極焊墊 '473836 _Case No. 89107050_Year Month and Day__ Brief description of the diagrams are not illustrated. The first diagram is a structural diagram illustrating an applicable element according to the "manufacturing method of a gallium nitride compound semiconductor" according to the present invention; The process of inventing a preferred embodiment of the "manufacturing method of gallium nitride compound semiconductor"; the third figure is the resistance measurement result of an electrode made according to the present invention. Drawing number description: I 0 0 substrate — II 0 N-type GaN layer, 1 12 N-type electrode 1 2 0 P-type GaN layer 1 2 2 P-type electrode 124 P-type electrode pad ''