TW468218B - Manufacture of semiconductor device and semiconductor manufacturing apparatus comprising the formation engineering of Aluminum alloy wiring film - Google Patents

Abstract

This invention provides a method to prevent the deposition of copper or silicon generated in a step of forming a film containing aluminum as a main component and containing at least copper or silicon, or in a thermal step of heating and quenching the film during pattern processing after the film formation. The film is heated to the temperature above the solid solution temperature of copper added aluminum or silicon added aluminum, which is a temperature greater than 280 DEG C to be specific. The patterned film is quenched to the temperature which can inhibit the deposition of copper or silicon at the grain boundary of aluminum or called triple point, which is below 150 DEG C at a cooling rate of about 20 DEG C/sec or more.

Description

46 82 1 B A7 ____B7_ V. Description of the invention (1) [Background of the invention] (Please read the precautions on the back before filling out this page) The present invention relates to the manufacturing method of semiconductor devices and semiconductor manufacturing devices, especially to the use of aluminum Film forming method, patterning method, film forming device, and resist ashing device for wiring film of alloy as main component, suitable for wiring made of alloy with aluminum as main component Formation. In the semiconductor manufacturing process, the wiring made of an alloy containing aluminum as a main component is usually formed by the following process. + First, an insulating film and an aluminum wiring film containing aluminum as a main component are sequentially formed on a semiconductor substrate. At this time, generally, a superitering device is used for the film formation of the aluminum wiring film. In addition, in the above-mentioned wiring film, Γ reduces electromigration (electro migration), stress migration (stress migration), etc. contain copper, silicon, and the like. These copper, silicon and the like generally contain an amount exceeding the solid solution limit at room temperature. According to the conditions for forming the aluminum wiring film, although the contents of copper and silicon are in an unbalanced state, they are solid-solved in aluminum to obtain a film of uniform quality. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. However, when the aluminum wiring film is to be processed into a desired pattern, a resist is usually coated on the aluminum wiring film, and the required mask pattern is developed by exposure to display ( mask pattern). At this time, when a micronized pattern is recently formed, a desired pattern may not always be obtained, and the focal length may be misaligned during exposure, or an undesirable phenomenon such as misalignment with a texture pattern may occur. In this case, the resist pattern is temporarily removed, and then the resist is applied, exposed, developed, and reformed into a desired pattern. At this time, the stripping of the resist that generally forms a bad pattern uses dry ashing. The paper size is applicable to China National Standard (CNS) A4 (210X297 mm) -A-

d6 82 1 B A7 _____B7 5. Description of the Invention (2) Device.干 In dry ashing equipment, use oxygen radical to ash the resist. At this time, in order to promote the reaction, it is usually necessary to raise the temperature of the processing substrate to a high temperature, and generally, ashing is performed in a range of 200 ° C to 300 ° C. After the ashing of the resist, there is no need to specifically control the temperature of the processing substrate, and the processing substrate will be naturally cooled. During its cooling process, copper or silicon, which is solid-dissolved in aluminum, is deposited. This mechanism is considered as follows. That is, when an aluminum alloy film containing copper at a ratio of 0.5% is formed by a sputtering method, copper is dissolved in aluminum although it is non-equilibrium immediately after film formation. However, when the resist is dry-ashed in order to reform the pattern, the temperature of the processing substrate rises to about 300 ° C, and copper is solid-dissolved in aluminum in an equilibrium state. After the ashing process, normally, the processing substrate will be naturally cooled, and it will be cooled to room temperature while still maintaining an equilibrium state. For example, when a molybdenum alloy contains copper in a proportion of 0.5%, it will be solid-dissolved in an equilibrium state above 230 ° C, but cannot be solid-dissolved in copper below 230 ° C. Copper will be deposited at the grain boundaries or triple points of the aluminum. By stripping the bad pattern caused by dry ashing as described above at a low temperature, the deposition of copper or silicon that is solid-dissolved in aluminum can be prevented to a certain extent. However, in the case of a chemically amplified resist used for a recent fine pattern, it is necessary to form an antireflection film made of an organic substance under the resist, and the organic antireflection film cannot be completely removed under the condition of low temperature peeling. As a result, peeling at an elevated temperature is indispensable, causing the deposition of copper or silicon to become a significant wiring project as described above. There are several processes that may cause the deposition of copper or silicon in aluminum. > For example, the article ... sometimes sometimes ... also __ This paper size applies to China National Standard (CNS) A4 (210X297 mm) (谙 Please read the precautions on the back before filling this page) Order Consumption Cooperation of Employees of Intellectual Property Bureau, Ministry of Economic Affairs

46821B A7 _B7 V. Explanation of the invention (3) · In the case of film formation (copper has been deposited. When copper or silicon is deposited on the aluminum grain boundary or three's point, it becomes a miniature photomask during aluminum etching processing (Micro mask (please read the precautions on the back before filling in this page)), which will cause the requested etching residues. Especially copper is a compound that does not generate high vapor pressure when the etching gas usually used in etching aluminum is processed. In order to remove the etching residue, a method with a strong spraying method is used. However, when forming a fine pattern like the current one, in order to ensure the focus margin due to the thin film thickness of the resist, it is necessary to maintain a high resist selection ratio Removal of etching residues during etching of aluminum will become very difficult. As in the conventional method described above, aluminum is used as the main component when forming a film containing at least copper or silicon, or during pattern processing after film formation. The problem of etching residues caused by the deposition of copper or silicon during thermal engineering during the stripping of bad resist patterns [Brief of the invention] Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The object of the present invention is to provide a heat treatment when aluminum is used as a main component to form a film containing at least copper or silicon, or to prevent peeling of a poor resist pattern when the pattern is formed after the film is added to the film. The deposition of copper or silicon during the process can be used to manufacture semiconductor devices and semiconductor manufacturing devices with good patterns without residues. According to the first aspect of the present invention (item 1 of the scope of patent application), it is provided A method of preparing a semiconductor substrate, forming an alloy film containing aluminum as a main component and containing at least either copper or silicon through an insulating film on the above substrate, and heating the alloy film to a paper size above a predetermined temperature Applicable to China National Standard (CNS) A4 specification (21 × 297 mm) -6-

4 6 82 1 B A7 B7 V. Description of the invention (4 (please read the precautions on the back before filling this page), and then cool down to a fixed temperature within a given time, thereby suppressing and stopping the above alloys Method for manufacturing a semiconductor device composed of the above process of depositing copper or silicon in a film · 'According to the second aspect of the present invention (item 7 of the scope of patent application), a process for preparing a semiconductor substrate is provided. A process of forming an alloy film containing aluminum as a main component and containing at least either copper or silicon through an insulating film on a substrate; a process of forming a resist pattern for etching on the alloy film; and a process of forming the resist pattern The process of dry ashing and peeling, and heating the alloy film above a predetermined temperature, and rapidly cooling it below the predetermined temperature within a predetermined time, thereby preventing the process of depositing the above-mentioned copper or silicon in the above-mentioned alloy film, and the above-mentioned Manufacturing method of semiconductor device constituted by the process of forming a resist pattern for etching on the alloy film again. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. According to the third aspect of the present invention (item 15 of the scope of patent application), a film forming device having an alloy film formed on a semiconductor substrate and containing aluminum as a main component and containing at least either copper or silicon is provided. And a semiconductor device that receives the alloy film formed by the film forming device, a heating device that heats the semiconductor substrate to a predetermined temperature or higher, and a semiconductor device that receives the semiconductor substrate heated by the heating device, The semiconductor substrate is a semiconductor manufacturing device for a cooling device that rapidly cools below a predetermined temperature within a predetermined time. According to the fourth aspect of the present invention (the 17th item in the scope of the patent application, 0 'is to provide a kind of; has accepted aluminum as the main The composition forms a semiconductor substrate containing an alloy film of at least either copper or silicon, a heating device for heating this semiconductor substrate to a temperature higher than a predetermined temperature, and a Chinese standard (CNS) A4 specification (210X297) accepted for the above-mentioned heating device private paper scale Mm > 468218 A7 _B7__ V. Description of the Invention (5) (Please read the notes on the back before filling (Write this page) The heated semiconductor substrate (the aforementioned semiconductor substrate, the rapid cooling device that rapidly cools the heated semiconductor substrate below a predetermined temperature within a predetermined time, and the semiconductor substrate that is rapidly cooled by the rapid cooling device, A semiconductor manufacturing apparatus for a resist pattern forming apparatus for forming a resist pattern on the above alloy film. According to a fifth aspect of the present invention (item 19 of the scope of application for a patent), there is provided a device having: The main component is to form an alloy film containing at least either copper or silicon, and a semiconductor substrate having a resist pattern formed on the alloy film, and the resist pattern on the semiconductor substrate is peeled off by the resist stripped by the ashing method. And the semiconductor substrate that has received the resist pattern peeled off in the uranium resist stripping device, a heating device that heats the semiconductor substrate to a predetermined temperature or more, and the semiconductor substrate that is heated by the heating device is heated The above-mentioned semiconductor substrate is rapidly cooled below a predetermined temperature within a predetermined time. But means of semiconductor manufacturing. [Detailed description of the invention] Printed by the Consumer Consumption Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The detailed description of the embodiment of the present invention is as follows with reference to the drawings. Press, the same parts will be marked with the same symbols to avoid duplication. First, the gist of the present invention will be described. The inventors of the present invention used aluminum as a main component, and deposited copper containing at least a copper film as the film formation condition 1. After the film was formed, the thermal history of the film was changed to form an evaluation sample for investigation. According to the degree of copper deposition in the film, the aluminum film is etched by the reactive ion etching method (RIE). The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -8- d6 821 3 A 7 _B7___ Fifth, the invention description (ό) is judged by the frequency of its residual _. (Please read the precautions on the back before filling in this page) First, as a method of forming aluminum, use a magnetron sputtering device, and use an aluminum alloy containing copper at, for example, 5% as a target. An evaluation sample having a cross-sectional structure as shown in FIG. 1 was formed. In Fig. 1, 1 series of silicon crystals, round, 2 series of film thicknesses are TE 0 S (Tetraethyl orthosil.icate) oxide film, for example, 400 nm, and 3 series of film thicknesses are, for example, 250 nm T film. The film thickness of the 4 series is, for example, a T i N film of 250 nm, and the T i film 3 and the T i N film are formed as a barrier metal. 0 5 is a film thickness formed by a magnetron sputtering method. For example, it is an A1 Cu alloy film with a thickness of 400 nm, a Ti film with a thickness of 6 series is, for example, a Ti film with a thickness of 5 nm, a TiN film with a thickness of 7 series is, for example, a 60 nm film, and the Ti film 6 and the TiN film 7 are barrier metals. For example, an organic film with a thickness of 4 5 nm is formed for the purpose of preventing reflection when an 8-series chemically amplified resist is printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Pattern, resist pattern 9 is, for example, 4 50 nm, line width is 0 20; am space width is 0.20 gm, which can be determined by the yield of the option / short between lines. The pattern of the agent will be changed as described above to change the film forming temperature of the aluminum-copper alloy film. For each sample, the aluminum-copper alloy film 5 will be etched with the resist pattern 9 as a photomask. The film formation temperature was used as a parameter to investigate the extent of the etching residue (equivalent to the deposition of copper). According to the etching of the aluminum-copper alloy film 5, the ICP (Inductive) paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) -9- 4 6 821 8 A7 B7 V. Description of the invention (7) A plasma) type RIE device performs RIE. According to the etching conditions of the aluminum-copper alloy film 5 of RIE, the induction power of the wire is 500W, the bias power is 150W, the pressure is 12mTo rr (1.36 P a), and the wafer temperature is 40 t :, The etching gas is Cl 2 / BC 13, and the flow rate of this etching gas is 75 sc cm (C 12 gas), 70 ((;; 111 (8 (: 13 gas). Use an etching gas containing ^: 12 gas like this By etching the aluminum-copper alloy film 5, A 1 reacts with Ci to become the reaction product A 1 C 1 3. This A 1 C 1 3 system emits light when it is generated, and twice the time until the light disappears when aluminum is processed. Time to etch. Press, at this time, in order to efficiently charge the positively charged C 1 2 ions to collide with the aluminum-copper alloy film 5 belonging to the target, apply to other wiring layers electrically connected to the aluminum-copper alloy film 5. Negative DC bias voltage Vdc, this DC bias voltage Vdc is about -7 0 V. The aluminum-copper alloy film 5 shown in the evaluation sample shown in FIG. 1 is formed by using the above-mentioned mixed gas of CI 2 / BCI 3 The sputtering film formation temperature and the evaluation sample were subjected to the above-mentioned etching conditions by the copper deposition site after the aluminum copper alloy film 5 was etched by RIE. Relationship between frequency and short yield (short yield) occurs due to the 'represents the residue of the following Table 1.

Ik ΪΡ plug! Only 1 (Please read the precautions on the back before filling out this page> Line o- Here, the number of residues refers to the etched g of the aluminum-copper alloy film 5 and the exposed oxide film on the texture In part, the number of bright spots per 1 field of view when observing with a dark field image (magnification X 5 0 0) of an optical microscope. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -10 -468218 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (8) Table 1 Film formation temperature q Brightness due to residue short-circuit yield room temperature (no heating) 4 3 8 7% 1 5 0 ° c 1 2 8 7 2% 2 5 0 ° C 2 2 4 6 1% 3 5 0 ° C 10 2 7 8% From the measurement results shown in Table 1, we can clearly understand the film formation of brocade copper alloy film 5. The conditions are related to the occurrence of residues. Figure 2 shows that in Table 1, when the film formation temperature at which the residues occur most frequently is at 250 ° C, the residues are subjected to Energy D ispersive X- Spectral results analyzed by ray Spectrophotometer (EDX). The analysis results shown in Figure 2 can be seen clearly in the aluminum-copper alloy film 5 The residue contains copper, and the deposition of copper is considered to be the cause of the residue ° As described above, the evaluation is made by changing the film forming temperature of the aluminum-copper alloy film 5. The substrate of the sample is placed in the heat after the aluminum-copper alloy film 5 is formed. On a hot plate, a heat treatment is applied at 250 ° C for 180 seconds, and then the aluminum-copper alloy film 5 is etched to pattern the wiring. In this way, the heat history is applied after film formation. After processing the wiring film of ^ copper alloy film 5 on the semiconductor substrate, the portion after the aluminum-copper alloy film 5 is etched and the oxide film of texture is exposed, the dark field image (magnification X 5 0 0) is measured with an optical microscope. The results of the number of fields of view are shown in Table 2 ° The size of this paper is applicable to the national standard (CNS) A4 specification (210 X 297 mm) (谙 Please read the precautions on the back before writing this page}

-11-46 8218 A7 __B7 V. Description of the invention (9) Table 2 Film formation temperature Bright point after film formation 2 50 0 ° C / 1 80 seconds Bright point after heat treatment Room temperature (without heating) 3 3 7 2 3 1 5 0 t 8 9 7 4 6 2 5 0 ° C 18 7 6 8 7 3 5 0. . 7 5 7 9 8 4 5 0 ° C 8 7 6 9 8 (Please read the precautions on the back before filling in this page) The employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs can print the measurement results shown in Table 2. However, due to the film formation temperature of the aluminum-copper alloy film 5, the degree of residue is different. The evaluation sample is applied to a hot plate at 250 ° C for 180 seconds, regardless of the temperature. The frequency (degree) of the aluminum-copper alloy film residue is the same. In addition, in the evaluation sample of the aluminum-copper alloy film formed under the same conditions, when the evaluation sample as described above was heat-treated on a hot plate, the frequency of many residues was observed in comparison with the case where it was not processed. According to the heat treatment at 250 ° C of the hot plate, usually, when the resist used for forming the mask pattern is re-patterned, the defective mask pattern (resist film) is equivalent to dry ash. Ashing temperature during aging. Although the ashing temperature is slightly different depending on the device and process, the ashing is performed to such an extent. From these facts, it remains as a residue after the patterning process of the aluminum-copper alloy film, but the amount is largely dependent on the film-forming temperature of the aluminum-copper alloy film. It is also known that when the pattern is re-formed, For dry ashing, this paper uses the Chinese National Standard (CNS) A4 (210X297 mm) -12, 46 82 1 8 a? B7 V. Description of the invention (10) High engineering and warm process (2 5 0 ° C) and will increase. The above-mentioned phenomenon is presumed to be caused by approximately as described below. (谙 Please read the precautions on the back of the board before filling in this page.) Due to the collision of the atoms ejected from the target during the sputtering process to form the aluminum-copper alloy film, they are adsorbed and deposited on the substrate (wafer). If the temperature of the substrate is low, the energy possessed by the atoms will be lost at once. 'It cannot become a stable equilibrium phase at the temperature of the substrate, but exists in a frozen state (unbalanced state). At this time, even if it contains copper exceeding the solid solution limit, it will not be deposited. However, when the substrate temperature is high, the deposited film is given thermal energy, and becomes the most stable phase at that temperature. For example, "when film-forming at room temperature" is considered to have less residue due to the deposition of copper. This is considered to be caused by a low substrate temperature, although it is unbalanced and solid-solved in a supersaturated state. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. At the time of film formation at 250 ° C, the film deposited on the substrate gives the atom sufficient energy to diffuse, and it is believed that a stable phase is formed at its temperature. Originally, although 250 ° C was the temperature near the beginning of copper deposition, it can be clearly seen due to the copper residue. After the aluminum-copper alloy film was formed by the film forming device, the wafer could not be cooled sufficiently. , Thought to be slowly cooled. In addition, when the aluminum-copper alloy film is formed at a higher temperature, the residue due to the deposition of copper is reduced, and the temperature is relatively high compared to the temperature at which the film is deposited. The film formation is completely stable and solid solution. Even if Xu Leng is in the temperature range where copper deposition occurs (around 250 ° C ~ 230 ° C) for a short period of time, it is considered to be caused by insufficient deposition. In order to improve this, the ig copper alloy film is carried out at various temperatures as described above. The paper size is applicable to the national standard (CNS) A4 specification (210 X 297 mm) -13- d6 82 1 8 A7 V. Description of the invention (11) (Please read the precautions on the back before filling this page) The film formation 'is then heat-treated for 180 seconds as the above-mentioned increase in the processing temperature (250 C) caused by the deposition of copper, and then, Heating and pressing at 350 ° (: hold for 5 minutes, after which copper or silicon (厶 1.01, S i film)) is frozen in the state of solid solution in aluminum, for example, cooling at 40 ° c / second The temperature is cooled to room temperature, and then the aluminum-copper alloy film is subjected to etching processing. The results of observing the residue of copper deposition are shown in Table 3. Table 3 Film formation temperature Film formation temperature immediately after the film is heated at 250 ° C / 180 seconds for heat treatment The next bright spot is from 3 5 0 ° C. The temperature of the shell after quenching is room temperature (no heating). 33 7 2 3 0 1 5 0 ° C 8 9 7 4 6 0 2 5 0 ° C 18 7 6 8 7 0 3 5 0 ° C 7 5 7 9 8 0 4 5 0 ° C 8 7 6 9 8 0 From the measurement results shown in Table 3, even if the aluminum-copper alloy film that actively occurs on copper deposits is heated to 3 5 0 ° C Guarantee In the case of rapid cooling, the deposition of copper can be prevented, and the residues that can completely prevent or cause the deposition can be obtained. Press, if the aluminum-copper alloy film is heated and pressed above 40 ° C, it will prevent the deposition. The point is good. However, the growth of aluminum particles in the alloy film and the undulations on the surface of the alloy film may cause obstacles to the lithographic imaging sequence. Therefore, the method according to the first embodiment of the present invention is as follows The third paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -14- 46 821 8 A7 B7 V. Description of the invention (12) As shown in the figure, TE 0 S is formed on the sand wafer After the oxide film 2 is formed thereon, a barrier metal formed by the T i film 3 and the T i N film 4 is formed, and an aluminum copper alloy film 5 is deposited thereon by, for example, a magnetron sputtering method. Next, in A barrier metal formed by the T i film 6 and the T i N film 7 is formed thereon, and after the organic antireflection film 8 is formed thereon, it is heated, for example, at a temperature of 280 ° C or higher for 5 minutes, and then Cooling rate above 20 ° C / second (for example, above 28 ° C to below 150 ° C within 6.5 seconds) Quick cooling. Here, when the substrate shown in Figure 3 is subjected to heat treatment and cooling, various heating is changed, the temperature and cooling rate are maintained, and the results of measuring the number of bright spots occurring at that time are shown in Table 4. (Please first Note on the back of the Geshuo Master, please fill out this page again) li. Order M. 猓. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 Cooling rate Heating • Holding temperature 2 0 0 ° C 2 3 0 t: 3 0 0 ° C 3 5 0 ° C 1 0 ° c / second 6 3 3 5 8 4 5 7 7 4 8 0 2 0 ° C / second 6 7 4 7 3 4 2 3 6 3 0 ° C / second 5 9 8 4 3 4 5 4 0 t / s 6 0 3 3 5 0 0 According to the results shown in Table 4, although the greater the cooling rate is, the better it is. However, if the temperature is above about 2 0 0 ° C, it is maintained at about 2 or / s. The effect range was found in the above range of the cooling rate. From the above results, when f forms the aluminum-copper alloy film 5, even if the paper size of this alloy is in accordance with the Chinese National Standard (CNS) A4 specification (2ί〇 × 297 mm) -15- 4 · 6 82 18 Λ7 'Α7 ___ Β7_ 5. Description of the invention (13) {Please read the precautions on the reverse side before filling out this page) Temporary deposition of copper in the film, and then heating to maintain the solid solution temperature above the temperature, so that it's solid solution again, in order to prevent copper precipitation Accumulation was quenched, although there was a -sum state, showing that it could prevent the deposition of copper. Therefore, the copper-aluminum-copper alloy film is prevented from being deposited if it is deposited after film formation. The method of the second embodiment of the present invention will be described below. First, as shown in FIG. 4A, after a TEOS oxide film 2 is formed on a silicon wafer 1, a barrier metal made of a T i film 3 and a T i N film 4 is formed thereon, and then, for example, a magnetic film is formed thereon. The aluminum-copper alloy film 5 ′ is deposited by a controlled sputtering method. Secondly, a barrier metal made of the T i film 6 and the T i N film 7 is formed thereon, and after the organic antireflection film 8 is formed thereon, and The same applies to the first embodiment described above, and it is rapidly cooled at a cooling rate of 280 ° C or higher. Thereafter, as in the case of FIG. 1, a resist pattern 9 is formed. At this time, it is assumed that the focus of the resist pattern 9 is out of focus at the time of exposure, or the alignment with the texture pattern is bad. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs in this case, using a dry ashing device as shown in FIG. 4B, the resist pattern 9 and the organic antireflection film 8 thereunder are peeled off due to ashing. As described above, the dry ashing device uses an oxygen radical to ash the resist. Therefore, in order to promote the reaction, it is necessary to raise the substrate temperature to a high temperature. Generally, it is performed in a range from 200 ° C to 300 ° C. Ashing. Therefore, after the ashing, copper is deposited on the aluminum-copper alloy film 5 as in the case of film formation. Therefore, in this embodiment, after the poor resist pattern 9 is peeled off, as in the first embodiment described above, the substrate is heated at a temperature of 280 ° C or higher, for example, for 5 minutes, held, and then 'at about 20 ° The cooling rate is faster than C / sec. This way, when the ash of the anti-uranium agent pattern 9 is ashed, the paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) ~ 16- Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 468218 A7 B7 V. Invention Explanation (14) The copper deposition occurs again in aluminum, alloy film & because it is heated at the solid solution temperature and above, it is kept solid solution, and it is quenched in order to prevent copper deposition, although it is in a supersaturated state, However, copper deposition in the aluminum-copper alloy film 5 can be prevented. After heating and quenching, as shown in Fig. 4C, the organic antireflection film 8 is deposited again, and a resist pattern 9 is formed thereon again. Thereafter, etching is performed by RIE using this resist pattern 9. In this way, according to this embodiment, although the required resist on the aluminum-copper alloy film 5 is patterned once, the desired pattern is not obtained. In order to perform the pattern formation again, the bare pattern is dry-debarred. The thermal history at the time of (dry strip) prevents copper from being deposited from the aluminum-copper alloy film 5. The method for explaining the third embodiment of the present invention is as follows. In the previous first and second embodiments, the process from forming the resist pattern 9 is the same. Thereafter, the resist pattern 9 is used for etching to form the aluminum-copper alloy film 5 and the barrier metal pattern above and below. After this pattern is formed, the unnecessary resist pattern 9 and the organic antireflection film 8 underneath are peeled off using a dry ashing device. Even in this case, ashing is usually performed in a range from 200 ° C to 300 ° C. After the ashing, an organic alkaline solution washing process and a water washing process are performed. I 1 Therefore, after the ashing process that does not require a resist pattern, copper is deposited on the aluminum-copper alloy film 5 as in the case of film formation. If copper is deposited, the water washing process after the washing process of the organic alkaline solution, the effect of the deposited copper and aluminum battery is as shown in the oblique view of FIG. 6A and the plan view of FIG. 6B. When the aluminum deposited around the copper dissolves at the time, perforation will occur in the wiring. The size of the paper is applicable to the Chinese national standard (CNS > A4 specification (210X297 mm). (Please read the note on the back of the first page before filling in this page) }

-17 " 46 8218 A7 ____B7 V. Description of invention (15). ^ 1 (Please read the precautions on the back before filling this page) '' In today's semiconductor integrated circuit, the width of the wiring has been shrinking. If this kind of through-hole phenomenon occurs, the wiring resistance will increase significantly, and it is easy to test. Disconnected. Therefore, the third embodiment is the same as the first and second embodiments. As shown in FIG. 5A, after the TEOS oxide film 2 is formed on the silicon wafer 1, a TOS oxide film 2 is formed thereon. The barrier metal formed by the i film 3 and the T i N film 4 is deposited thereon, such as a magnetron sputtering method, to deposit an aluminum-copper alloy film 5, and then a Ti film 6 and a TiN film 7 are formed thereon. After forming the barrier metal and forming the organic anti-reflection film 8 thereon, as in the case of the first and second embodiments described above, the wafer is heated at a temperature of 280 ° C or higher for 5 minutes, and then, It is rapidly cooled at a cooling rate of about 20 ° C / second or more. Thereafter, as in FIG. 1 and the like, as shown in FIG. 5B, a resist pattern 9 is formed. Next, etching is performed by R I E, and as shown in FIG. 5C *, a pattern of the aluminum-copper alloy film 5 and the barrier metal above and below it is formed. Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Next, as shown in FIG. 5D, the unnecessary resist pattern 9 and the organic antireflection film 8 on the lower part thereof are peeled off using a dry ashing device. At this time, ashing is usually performed at 300 ° C. Therefore, after ashing, it is the same as the wiring deposition formed by the aluminum-copper alloy film 5 after the ashing is performed, as in the case of film formation or after the peeling of the resist pattern is not required. Accumulated copper. Therefore, in the method of this embodiment, before the washing process of the organic alkaline solution and the subsequent washing process | the paper size of the wafer above 280 ° C applies the Chinese national standard (CNS> A4) Specifications (210X: 297 mm) -18- 468218 A? B7 V. Description of the invention (16) The temperature, such as | heating, hold for 5 minutes, and then quickly cooled at a rate of about 20 ° C / second or more. Therefore, when the resist pattern 9 is ashed, even if copper is deposited in the wiring formed by the aluminum-copper alloy film 5, it is heated above the solid solution temperature, maintained, and solidified again, in order to prevent copper deposition. The product is rapidly cooled, so even in the supersaturated state1, copper can be prevented from being deposited in the wiring. As a result, after the organic cleaning process and the real water washing process, as shown in the previous oblique diagram of FIG. 6A As shown in the plan view of FIG. 6B, the occurrence of the perforation of the wiring can be prevented. For example, after forming a wiring with a width of 20 and a conventional method and the method of the above embodiment, observe 10 wiring by S EM At the time, 4 3 holes were observed in the conventional method, and In comparison, the hole in the method of the above embodiment mode becomes zero. Various embodiments of the semiconductor manufacturing apparatus of the present invention are described below. Fig. 7 shows a fourth embodiment of the metal film forming apparatus of the present invention. A schematic plan view of the structure. In the figure, 11 is a wafer storage chamber before processing, and 12 is a wafer storage chamber after processing. The wafer storage chamber before processing 1 contains a set of silicon wafers before processing. (Set) of multiple cassettes. In the processed wafer storage chamber 12, a plurality of cassettes of each processed silicon wafer set are housed. The cassettes are set in the wafer storage chamber stored before the processing. The silicon wafer (silicon semiconductor substrate) before processing of the cassettes in 1 is sent to the first film forming device 14 for forming the T i film and the T i N film by the conveying mechanism 13. The paper scale is applicable to China National Standard (CNS) 8-4 (210X297 mm) (Please read the precautions on the back before filling this page)

, 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -19- 468218 A7 _B7 _ V. Description of the invention (17) Film formation of T it film and T i N film. Press to form a TEOS oxide film on the silicon wafer in advance. The wafer on which the Ti film and the Ti film are formed is sent to the film forming apparatus 15 for film formation by the transport mechanism 13. Here, an aluminum-copper alloy film is formed on the wafer. As a second film forming device Γ 5 a magnetron sputtering device is used, for example, an aluminum film containing copper at a ratio of 0.5% is used as a target, and a film is formed with copper at a ratio of 0.5% Aluminum copper alloy film. The wafer on which the aluminum-copper alloy film is formed is sent to the first film forming apparatus 14 again by the transport mechanism 13, and the T i film and T i N film are sequentially formed here. The second film forming of the Ti film and the Ti film is sent from the transport mechanism 13 to the heating device 16. In this heating device, the 16-series crystal circle is heated at a temperature of 280 ° C or higher for 5 minutes, for example. The wafer heated by the heating device 16 is immediately sent to the cooling device "&7; 7" by the transport mechanism 1.3. In this cooling device 17, the wafer is quickly cooled at a cooling rate of about 20 ° C / sec or more (for example, from 250 ° C or more to 150 ° C or less within 6.5 seconds). . The cooled wafers are sent by the transport mechanism 13 to the processed wafer storage chamber 12 and set as a processed wafer in a cassette to be stored. An evaluation sample having the structure shown in Fig. 1 was produced using the metal film forming apparatus shown in Fig. 7 described above. Press, as the film formation temperature of the aluminum-copper alloy film 5 is set to room temperature (without heating), 4 conditions of 150 ° C, 25 CTC, and 3 50 ° c. In the heating device 16 of the display device, the wafer is heated to 350 ° C for 3 minutes, and thereafter, it is rapidly cooled in the cooling device 17 at a cooling rate of about 40 ° C / sec. After that, the resist pattern 9 was used as a mask for each evaluation sample. The aluminum-copper paper size was applied to the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Employee Consumer Cooperatives, 20 46 82 1 8 A7 B7 V. Description of the invention (18) Etching of alloy film 5, using the film forming temperature of aluminum-copper alloy film 5 as a parameter Residue (equivalent to copper nodule). (Read the precautions on the back before you fill out this page.) Press. The above etching process is performed using the R CP device of the I CP type with R I E. At this time, the conditions for the etching process of the organic antireflection film 8 are plasma induction power of 500W, bias power of 250W, pressure of 1.36Pa, wafer temperature of 40 ° C, and The type and flow rate are C I2 / BC 13 / 〇2 and 3.0 sccm / 4〇sc cm / 1 10 sccm, and the etching time is 20 seconds. Thereafter, the conditions 1 for the uranium engraving process of the aluminum-copper alloy film 5 are set to be plasma induction power of 500W, bias power of 150W, pressure of 1.36Pa, wafer temperature of 40 t :, the type and flow rate of the etching gas CI 2 / BC 1 3 / 〇2 and 7 5 sc cm / 7 0 sc cm are etched twice as long as the light emission disappears at the time of processing error. Press, the DC bias voltage Vdc at this time is about -70V. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the etching process under the above conditions. The exposed part of the oxide film of the texture of the aluminum-copper alloy film 5 is observed with an optical microscope to observe the dark field image (magnification X 5 0 0). Table 5 shows the number of bright spots (residues caused by copper lakes) in one field of view, and the results of the short-circuit yield measurement of the electrical measurement of the wiring pattern of the aluminum-copper alloy film 5 are shown in Table 5. The paper size is in accordance with China National Standard (CNS) A4 (2ί〇χ297mm) -21-468218 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (19) m_5 Film formation temperature due to the residue Bright point short circuit yield room temperature (without heating) 3 9 9% 1 5 0 ° C 3 10 0% 2 5 0 ° C 2 10 0% 3 5 0 ° C 2 9 9% The results shown in Table 5 are given by The oblique direction of the residue observed at the film formation temperature has disappeared, and the occurrence of the residue cannot be seen under almost any conditions. In addition, the short-circuit yield also became approximately 100%. The metal film forming apparatus of this embodiment is provided with a heating device 16 that heats a film formed of an aluminum-copper alloy film at a temperature of 280 ° C or higher for 5 minutes, and a heating device 16 The heated wafer is a cooling device 17 which rapidly cools at a cooling rate of more than 20 ° C / sec, so that copper can be prevented from being deposited from the aluminum-copper alloy film such as copper after film formation. According to the device in this embodiment, only the first film forming device 14 for forming the Ti film and the T i N film and the film forming device 15 for forming the aluminum copper alloy film are provided. The explanation was given at the time, but in order to increase the production capacity, two or more can be installed separately. Fig. 8 is a plan view showing a schematic configuration of a lithographic apparatus according to a fifth embodiment of the present invention. In the figure, 21 is a wafer storage chamber before processing, and 22 is a processed wafer storage chamber. The pre-processing wafer storage room 21 is a copy paper set to contain silicon wafers before processing to form the above-mentioned aluminum-copper alloy film. The paper size is applicable to 1f7 national standards (CNS) A4 specifications (210X297 mm) (please (Read the notes on the back before filling out this page)

-22- d6 82 l 8 A7 ___B7 V. Description of the invention (20) Number of cassettes. In the processed wafer storage chamber 22, a plurality of cassettes set by a photo-etched silicon wafer are set. (Please read the precautions on the back before filling out this page} The pre-processed sand wafer (Semiconductor substrate) stored in the cassette stored in the pre-processed wafer storage chamber 21 is a transport mechanism not shown Send to heating device 2 3. In this heating device 2 3, the wafer is heated at a temperature above 280 ° C, for example, and held for 5 minutes. The wafer heated by the heating device 2 3 is immediately sent to cooling Device 1 4. In this cooling device 24, the wafer is cooled at a cooling rate of about 20 ° C / sec or more (for example, from 280 ° C or more to 2.5 ° C or less within 6.5 seconds). The ground is cooled. The cooled wafer is sent to the resist coating device 2.5, where the resist is applied. The wafer after the resist is applied is sent to the exposure device 2.5. The resist is exposed to a predetermined pattern. The exposed wafer is sent to a resist developing device 27, where the resist is developed. The developed wafer is sequentially sent to several post-processing devices. 2 8 ~ 30, as the processed wafer system is set in the cassette and stored. Press, as the above-mentioned post-processing device 2 8 ~ 30 system, for example, water Device, drying device, etc. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the photoetching device in this embodiment. After forming an aluminum-copper alloy film, the wafer that has not been heated / quickly cooled as described above is used as a pre-processing wafer When using a circle, heating, holding, and cooling speeds are performed before the formation of the resist pattern, so that copper can be prevented from being deposited from the aluminum-copper alloy film that deposits copper after film formation, that is, the device in this embodiment. In the past, the case where only one resist coating device 25 and the resist development device 27 were provided was explained, but in order to increase the production capacity, two or more 9 can be set separately. (CNS) A4 specification (.210X297 mm) -23- 4 6 82 1 8 A7 B7 V. Description of the invention (21) The figure shows the schematic structure of the dry ashing equipment according to the sixth embodiment of the present invention. The plan view is shown in Fig. '3 1 before processing wafer storage chamber, 3 2 is processed wafer storage chamber 3 2. Before processing, the wafer storage chamber 31 contains a bad anti-agent which is set to be peeled off by ashing. The pattern is formed on the aluminum-copper alloy film The multiple cassettes of the silicon wafers before processing. Also, the multiple cassettes containing the ashed silicon wafers are stored in the processed wafer storage chamber 3 2 and are housed in the pre-processing wafer storage chamber 31. The silicon wafer (silicon semiconductor substrate) before the processing of the cassette is sent to either the first or second ashing device 3 4, 35 by the conveying mechanism 33 to ash the poor resist pattern. Ash The converted wafer is sent from the transport mechanism 33 to the heating device 36. Here, the heating device 36 is used for heating the wafer at a temperature above 280 ° C for 5 minutes. The heating device 36 heats the wafer. The subsequent wafers are immediately sent to the cooling device 37. In this cooling device 37, the wafer is rapidly cooled at a cooling rate of more than 20 ° C / second (for example, from 280 ° C or more to 150 ° C or less within 6.5 seconds). The cooled wafer is sent from the transport mechanism 33 to the processed wafer storage chamber 32, and the wafer is placed in a cassette and stored as a processed wafer. Normally * when the resist pattern is to be formed, if the misalignment of the focal length during exposure or the misalignment with the texture pattern occurs, the dry ashing device will temporarily peel off the resist 'to perform pattern formation again. At this time, dry ashing is usually carried out by the active species of oxygen in an oxygen plasma atmosphere or in a downstream manner, but in order to increase the ashing speed, the temperature is in the range of 25.0 to 300 ° C. Including the thermal history of such high-temperature peeling processes, as mentioned above, this paper applies the Chinese National Standard (C »S) A4 specification (2 丨 0X297) in the aluminum grain boundary (please read the precautions on the back first) (Fill in this page) Order printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -24- 6 82 1 8 A7 __B7 Five 'Invention Note (22) or Mie Brother copper or silicon (aluminum, copper, silicon film) deposition , The reason for becoming residual 'slag, the reason for reducing yield. (Please read the precautions on the back before filling in this page} Therefore, the dry ashing device according to this embodiment is formed on the aluminum-copper alloy film for the time being, and the resist pattern is not used to obtain the required mask pattern. ' 'The poor resist pattern and the organic antireflection film are peeled off. This peeling is performed by an oxygen ash at 300 ° C in a downstream ashing device. The resist and the organic antireflection film are peeled off as described above. After the ashing and peeling, pattern formation and conventional samples are performed again as before. After the resist and the organic antireflection film are peeled off from the ashing as described above, the heating device 36 is heated to 350 ° C and held for 3 minutes. Then, after the cooling device 37 is rapidly cooled at a cooling rate of about 30 degrees / second, the patterned example sample is formed again, and an etching process of an aluminum-copper alloy film is applied using an ICR type RIE apparatus. Conditions for this etching process For the organic anti-reflection film 8, the plasma induction power is set to 500W, the bias power is 250W, printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 1. 3 6 P a, and the wafer temperature is 40 ° C, The type and flow rate of the etching gas are C I2 / BC I3 / O2 and 30 s c cm / 40 sc cm / 1 0 sccm, and the etching time is 20 seconds. After that, the aluminum-copper alloy film 5 continues to be plasma induction Power 5 0 0 W., bias power 2 50 W, pressure 1.3 6 P a, wafer temperature 40 ° C, type and flow of etching gas are C 12 / BC 13 and 75 S c cm / 70 sc cm, etching time is twice the time until the luminescence disappears when aluminum is processed. The results are shown in Table 6. This paper size applies Chinese National Standard (CNS) A4 specification (210X297 cm) -25- d6 8218 A7 B7 V. Description of the invention (23) Table 6 The film formation temperature is known after the ashing. After the processing of this embodiment, the bright spot yield is short 53 F * Redundant short circuit yield room temperature (without heating) 3 2 5 .3 5% 2 9 9% 1 5 0 t 3 3 4 3 8% 4 9 8% 2 5 0 ° C 3 8 8 3 4% 3 1 0 0% 3 5 0 ° C 2 9 8 3 1% 2 9 9% (Poetry (Please read the precautions on the back before filling in this page.) According to the results in Table 6, in order to perform the pattern formation again, when performing an ashing process, it has nothing to do with the film forming temperature of the sample, which is caused by the copper deposition. The frequency of slag increases a lot, and the short-circuit yield is also greatly reduced. Compared with this, even if the ashing is performed by using the device of this embodiment, the occurrence of residue can be suppressed, and the short-circuit yield is at least Also got about 100%. This is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. After the defective resist pattern is ashed by the dry ashing device of this embodiment, the wafer is heated, maintained, and cooled down, which prevents film formation. That is, the phenomenon that copper is later deposited from an aluminum-copper alloy film. Fig. 10 is a detailed configuration showing an example of a heating device and a cooling device used in the devices of the fourth to sixth embodiments. In Fig. 1 Q, 41 1 series pre-processing wafer storage room, 4 2 series processed wafer storage room, 4 3 series heating device, 4 4 series cooling device 4 4, and pre-processing wafer storage room 41 correspond to The above-mentioned pre-processed wafer storage chambers 1 1, 2 1, 31, and the processed wafer storage chambers 42 correspond to the above-mentioned paper standards and apply the Chinese National Standard (CNS) A4 specification (210X297 mm) -26 4682 1 8 Α7 Β7 V. Description of the invention (24) Handle round storage room 1 2, 2 2 and 3 2, heating device 4 3 corresponds to the above heating device 16 '23' 36, cooling device 44 pair (please read the first Note: Please fill in this page again). The processing HU wafer storage chamber 4 1 stores a plurality of cassettes 4 6 for storing pre-processed wafers 4 5. 4 7 is mounted from the pre-processing wafer storage chamber 4 1 for pre-processing wafers 4 5 The cassette 46 is transported to one of the above-mentioned transport mechanisms of the heating device 43, and the series 8 is an isolation valve (gate valve). In the heating device 4 3 '49 is a cable for supplying power to the heater' 5 0 is a lamp heater used to heat the pre-processed wafer 4 5 from above, and 5 1 is equipped with a wafer 5 2 in the heating process. The Tibetan type heating table, 5 3 is a table that holds the above heating table 51, 5 4 is a thermocouple that monitors the temperature of the above heating table 51, and 5 5 is a surface oxidation prevention mechanism for the wiring metal during heating of the wafer 5 2 It is necessary to supply a nitrogen gas introduction line in the heating device 43. If it is not necessary to supply a nitrogen valve in the heating device 43, the gas introduction line 55 may be omitted. The cooling device 4 4, 5 6 is equipped with a cooling stage for cooling (quenching) wafers 5 7 and 5 8 is the same as the cooling stage 56. The 5 9 series is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Supply of cooling water to the cooling station 56 The cooling water supply line 59, 60 used in the cooling station 56 is a gas introduction line for supplying nitrogen in the cooling device 44. The processed wafer storage chamber 4 2 stores the processed wafers 6 1 and the multiple cassettes 6 1 ^ The heating / cooling processing of the wafers in the apparatus shown in FIG. 10 is described below. This paper size applies to the Chinese National Opera Peak 4 specifications (gifted by 21〇χ) Shan 46 8218 A7 B7 V. Description of the invention (25) (Because of the precautions on the back of the first cabinet, please fill in this page) Processing, the front wafer 4 5 series It is set in the cassette 4 6 and is transported by the transport mechanism 4 7 to the heating table 51 of the heating device 4 3 through the isolation valve (gate valve) 4 8. In the heating device 4 3, the heating stage 51 is heated because the built-in heater stage itself is heated 'to heat the wafer 5 2 by heat conduction to the wafer 5 2 mounted on the cassette 4 6. The wafer 52 is heated from above by a lamp heater 50. At this time, 'the nitrogen is introduced from the gas introduction line 55' to prevent the surface of the wiring metal from being oxidized during the heating of the wafer 52. According to the above-mentioned heating device 4 3, although the wafer 5 2 is not fixed to the heating table 5 1, in order to improve the heat conduction between the wafer 5 2 and the heating table 5 1, the wafer 5 2 is fixed to the heating table 5 by a jig. 1. It is preferable to fix the wafer 5 2 to the heating table 51 using an electrostatic clamp. As described above, the wafer subjected to the heat treatment by the heating device 4 3 is transported by the transport mechanism to the cooling table 56 in the cooling device 4 4 to be quenched. The cooling stations 5 and 6 are cooled by cooling water. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs on the cooling device 4 4. Although the wafer 5 7 is not fixed to the cooling table 5 6, in order to improve the heat conduction between the wafer 57 and the cooling table 5 6, a fixture is used. It is preferable to fix the wafer 5 7 to the cooling stage 56 or to fix the wafer 5 7 to the wafer 57 with an electrostatic clamp. When the wafer 57 is cooled, nitrogen is introduced from the nitrogen supply line 60. At this time, by changing the nitrogen pressure in the cooling device 44, the cooling speed of the wafer 57 can also be slightly changed. Then, the wafer 61 that has been heated and cooled as described above is returned to the cassette 62 by the transport mechanism. This paper size applies to China National Sample (CNS) A4 specification (2! 0 × 297 mm) -28- d6 821 β A7 B7 V. Description of the invention (26) If the manufacturing method and manufacturing equipment of the semiconductor manufacturing device are based on the above (谙 Please read the precautions on the back before filling this page). For aluminum-copper film, heat-treat to a temperature above the solid solution temperature of copper for rapid cooling, even if copper is added to aluminum at room temperature exceeding the solid solution limit. It can also prevent the diffusion and deposition of copper atoms or fine particles during the film formation, and it is especially effective for wiring processing of semiconductor devices. _ By heating and quenching at a temperature above the solid solution temperature of copper as described above, rapid cooling treatment can suppress the residue due to copper deposition after the pattern forming process of R I Ε. In addition, after the above-mentioned copper solid solution temperature is heated and quenched, the aluminum-copper film formed by the film-forming device is applied, and the film formed under any film-forming conditions can also prevent the deposition of copper. As described above, the heating mechanism for heating at a temperature higher than the solid solution temperature of copper and the quenching mechanism for quenching may be installed in the film forming apparatus. --- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. According to the invention as described above, the film formation using aluminum as the main component, at least containing copper or silicon, can be prevented during pattern processing after film formation. The deposition of copper or silicon that occurs during the thermal process at the time of peeling of the poor resist pattern can provide a semiconductor device manufacturing method and a semiconductor manufacturing device that can process a good pattern without residue. Brief Description of the Drawings Fig. 1 is a cross-sectional view showing the structure of an evaluation sample manufactured by the method for manufacturing a semiconductor device of the present invention, and Fig. 2 is a view showing the film formation temperature of the aluminum-copper film in the evaluation sample of Fig. 1 The scale of the residual paper due to copper deposition after the wiring processing of the evaluation sample at 2 0 ° C is applicable to the national standard (CNS) A4 specification (210X297 mm) -29- 468218 A7 B7 V. Description of the invention (27) Spectral chart of the analysis result by ED (X. Figure 3 is a cross-sectional view showing a process by one of the methods of the first embodiment of the present invention, Figure 4A ~ Figure 4C are sequentially shown by the second implementation of the present invention A sectional view of each process of the method of the form, FIGS. 5A to 5. FIG. D is a sectional view of each process of the method of the third embodiment of the present invention in sequence, and FIGS. 6A and 6B are An oblique view and a plan view showing a washing process of an organic alkali-based solution and a wiring state after a water washing process after forming a pattern, and FIG. 7 is a plan view showing a schematic configuration of a metal film forming apparatus according to a fourth embodiment of the present invention. FIG. 8 shows the structure of the invention A plan view of a schematic configuration of a lithographic imaging apparatus according to a fifth embodiment, FIG. 9 is a plan view illustrating a schematic configuration of a dry ashing apparatus according to a sixth embodiment of the present invention, and FIG. 10 is a plan view illustrating the fourth to fourth sections. Figure 6 shows the detailed structure of an example of the heating device and cooling device used in the devices of each embodiment. Table 1 Comparison of main components 1 Silicon wafer 2 TEOS film. 3, 6 T i film 4, 7 T i N film This paper size applies to China National Standard (CNS) Α4 size (2 丨 0X297 mm) (Please read the precautions on the back before filling out this page) Nail Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives -30 Printed by the Consumer Cooperative of the Property Bureau 468218 A7 B7 V. Description of the invention (28) 5 Aluminum-copper 1 alloy film '8 Organic anti-reflection film 9 Anti-contact agent pattern 3 1, 11, 11 2 Processing / wafer storage room 3 2, 12 2 2 Processing wafer storage room 4 9, 13, 13 3 Transport mechanism 1 4 Film forming device 1 6, 4 3 Heating device 1Ί, 4 4 Cooling device 2 5 Exposure device 4 6 Cassette 5 2 Wafer 5 1 Heating table 6 0 Gas introduction line (read the first notice and read the back page before filling out this page) The paper size of the book is applicable to China National Standard (CNS) A4 (210X297 mm) -31 ~

Claims (1)

468218 C8 D8 VI. Application for Patent Scope 1. A method for manufacturing a semiconductor device; the process of preparing a semiconductor substrate, and forming an aluminum film as the main component through the insulating film on the above substrate, containing at least copper and silicon The production process of any one of the alloy films is composed of a process of suppressing the deposition of the copper or silicon in the alloy film by rapidly cooling the alloy film to a predetermined temperature below the predetermined temperature after heating and pressing the predetermined temperature. 2. The method according to item 1 of the scope of patent application, wherein the temperature of heating the alloy film is above the temperature at which the above-mentioned aluminum and copper and silicon are solid-dissolved, and the temperature of cooling the alloy film is at The grain boundary or triple point of the aluminum suppresses the temperature at which either of the copper and silicon is deposited. 3. The method according to item 1 of the scope of patent application, wherein after the above alloy film is heated above 280 ° C, it is rapidly cooled to below 150 t: below 20 ° C / sec. 4. The method according to item 1 of the scope of patent application, further comprising: after heating and rapid cooling of the alloy film, a process 1 of forming a resist pattern for etching on the alloy film and using the resist Dry etching of patterns: a process of forming the alloy film into a predetermined shape pattern, a process of peeling the resist pattern by dry ashing and peeling the resist pattern, and washing the resist pattern before washing with the organic alkaline solution After the above-mentioned alloy film is heated above a predetermined temperature, it is rapidly cooled below the predetermined temperature within a predetermined time, thereby suppressing the deposition of the copper or silicon in the patterned alloy film. This paper uses China National Standards (CNS) A4 size (210 X 297 mm) (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives-32- A8 B8 C8 D8 468218 6. Application for patent scope 5. The method according to item 4 of the scope of patent application, wherein the temperature of heating the above-mentioned alloy film formed with a pattern is a solid solution added to either of the above-mentioned copper and silicon. Above the temperature, the temperature at which the above-mentioned alloy film forming the pattern is cooled is a temperature at which the deposition of either of the above-mentioned copper and silicon is suppressed in the above-mentioned aluminum or triple point. . 6. The method according to item 5 of the scope of patent application, wherein the patterned alloy film is heated to a temperature above 280 ° C, and then rapidly to a temperature below 15 OeC at a speed above 20 ° C / sec. cool down. 7 · A method for manufacturing a semiconductor device, comprising: a process for preparing a semiconductor substrate, and a process for forming an alloy film containing aluminum as a main component containing at least one of copper and silicon via an insulating film on the substrate; > And a process of forming a resist pattern for etching on the alloy film, a process of adding the resist pattern from dry ashing, and a process of peeling, and heating the alloy film to a predetermined temperature or higher, and then moving to the predetermined temperature In the following, rapid cooling is performed within a predetermined time, thereby suppressing the deposition of copper or silicon in the alloy film, and forming a resist pattern for etching on the alloy film again. ', 8 The method according to item 7 of the scope of the patent application, wherein the temperature of heating the alloy film is higher than the temperature of either solid copper or silicon added to the above aluminum, and the temperature of cooling the alloy film is The grain boundary or triple point of the aluminum suppresses the deposition temperature of either of the copper and silicon. 9. The method according to item 7 of the scope of patent application, in which the above-mentioned paper-making paper scale (CNS) 44 secret (2 丨 0X297 mm) is formed ~~ -33- (Please read the note on the back first Please fill in this item again), 1T printed A8 B8 C8 D8 d6 821 3 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. After applying for a patent to dry the gold film, before forming the above-mentioned resist pattern, it is necessary to have the above alloy, After the film is heated above the predetermined temperature, it is rapidly cooled below the predetermined temperature within a predetermined time, thereby suppressing the deposition of the above-mentioned copper or silicon in the above-mentioned alloy film = 1 〇. The method as described in item 9 of the scope of patent application The temperature at which the alloy film is heated is the temperature at which any one of the copper and silicon added to the aluminum is above the solid solution, and the temperature at which the alloy film is cooled is to suppress the copper and Temperature of deposition of any one of the silicon "1 1. The method as described in item 10 of the patent application range, wherein the above alloy film is heated to 2 8 Ot: after the above, it is lowered to 150 ° C to 20 ° C Speed above 1 second Perform rapid cooling. 12. The method according to item 7 of the scope of patent application, wherein the above process of forming the alloy film into a predetermined shape pattern is performed by a dry etching method using the above-mentioned resist pattern to be formed again, and the above-mentioned will be formed again The process of removing the resist pattern by dry ashing, and before the substrate is washed with an organic alkali-based solution, the patterned alloy film is heated to a predetermined temperature or higher, and then rapidly lowered to a predetermined temperature within a predetermined time. Cooling, thereby _, has the process of suppressing the deposition of the above-mentioned copper or silicon in the patterned above-mentioned alloy film = 1 3. The method according to item 12 of the patent application scope, wherein the patterned above-mentioned alloy is heated The temperature of the film is higher than the temperature at which either the copper or silicon added to the above-mentioned aluminum is a solid solution. The temperature of the alloy film to be patterned is to cool the copper or silicon at the aluminum grain boundary or the three points. This paper size is applicable to the national standard (CNS) A4 (210X297 mm) — iβ, —— (Please read the precautions on the back before filling this page) Order the Ministry of Economic Affairs Printed by the Consumer Property Cooperative of the Intellectual Property Bureau -34- ^ 68218 AS B8 CS D8 VI. Deposition temperature of any party applying for patent scope 11), 1 4 · If the method of applying for patent scope item No. 13 'is the above ( Please read the precautions on the back before filling in this page.) After the patterned alloy film is heated to more than 280 ° C, it will be rapidly cooled below 150 ° C at a rate of 20 ° C / s or more. 15 types of semiconductor manufacturing devices, comprising: a film forming device that uses aluminum as a main component and forms an alloy film containing at least one of copper and silicon on a semiconductor substrate; and the film forming device receives and forms the alloy Film semiconductor substrate 'A heating device that heats this semiconductor substrate to a predetermined temperature or higher, and receives the semiconductor substrate heated by the heating device, and rapidly heats the heated semiconductor substrate to a temperature lower than a predetermined temperature within a predetermined time. Cooling device. 4 ^^ 1 6. As described in # 15 of the scope of the patent application, the above-mentioned force port ζ > ψ thermal device is used to heat the semiconductor substrate to 280 ° C, and the rapid cooling device is The semiconductor substrate heated to a temperature of 280 ° C or more is rapidly cooled to a temperature of 150 ° C or less at a speed of 20 ° C / sec or more. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 17. A semiconductor manufacturing device having: Accepted a semiconductor substrate formed with aluminum as a main component and an alloy film containing at least one of copper and silicon; A heating device that heats the substrate to a predetermined temperature or higher, and a rapid cooling device that rapidly cools the heated semiconductor substrate below a predetermined temperature within a predetermined time while receiving the semiconductor substrate heated by the heating device, which is suitable for this paper. China National Standard (CNS) A4 specification (21 × X 297) -35- 46 82 18 as 丨 B8 C3 D8 I. ^ _____ VI. The scope of patent application is in the above rapid cooling device to accept the above semiconductor base that is rapidly cooled. Plate, forming a resist pattern on the above-mentioned alloy film (please read the precautions on the back before filling out this page) a 08. For the device in the 17th scope of the patent application, the above The heating device is used for heating the semiconductor substrate to a temperature above 280 ° C. The rapid cooling device is used for heating. The above-mentioned semiconductor substrate having a heat of 2 0 0 ° C or more is rapidly cooled to a temperature of 15 0 ° C or less at a rate of 20 t / s or more. 19. A semiconductor device comprising: receiving an alloy film having aluminum as a main component and containing at least any one of copper and silicon; and a semiconductor substrate having an anti-rhenium pattern formed on the alloy film A resist peeling device for peeling the resist pattern on the semiconductor substrate by an ashing method, and the semiconductor substrate receiving the peeling of the resist pattern by the resist peeling device, and heating the semiconductor substrate to a predetermined value The heating device above the temperature, and the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints and accepts the semiconductor substrate heated by the heating device, and the heated semiconductor substrate is rapidly cooled below a predetermined temperature within a predetermined time. Rapid cooling device. 2 0. The device according to item 19 of the scope of patent application, wherein the heating device is to heat the semiconductor substrate to above 280, and the rapid cooling device is to be heated to the semiconductor substrate above 280 ° C. It is cooled rapidly below 150 ° C and at a speed above 20 ° C / sec. This paper size applies to China National Standard (CNS) Α4 specification (2 丨 0X297 public director) -36-