經濟部智慧財產局員工消費合作社印*1^ 466533 A7 _*__；__B7 五、發明說明（） 5-1發明領域： 本發明係與一種監控離子流的裝置與方法有關，特別 有關於一種用於監測半導體製程令離子植入機之離子流的 裝置與方法》 5-2發明背景： 離子佈植（Ion Implantation)是半導體積體電路製程 中一項重要的單元製程。透過離子植入機將摻質電漿化， 再透過質量分析器（Mass Analyzer)自電漿_萃取出所需 要的離子，之後再以電場對所萃取出的離子加速，以植入 晶圊的表面。由於離子植入機可以很有效的控制植入離子 的能量與劑量’因此離子植入製程已經廣泛而頻繁的運用 在各類的半導體製程之中。舉例而言，舉凡構成金氧半場 效電晶體（M0SFET)之源/汲極、N井或P井、以及通道阻絕 等，都在離子植入法的應用範圍之内。 由於半導體積體電路的積集度越來越高，其導線寬度 也進入了 0.25"m甚至0，18以111的水準，因此如何精準的 控制植入離子的劑量與能量’以在半導體基板中形成輪廊 精確的搀雜區域’成為了改良與控制離子植入製程的—項 重要議題。而要精確的控制植入離子的劑量與能量，則必 須要精確的監控離子植入機_射入晶圓表面的離子束流 本紙張尺度適用_囵國家標準（CNS)A4規格（210 * 297么、釐） ^--------訂.--------_、 (請先間讀背面之注音？事項再填寫本頁) 4 6 65 3 3 A7 B7 五、發明說明（ 量。為了監測離子植入製程中離子束流量（Beam Current)’傳统上已發展出幾種不同的監測方式’以下則 針對這些習知的方法做一些概略的介紹。 首 用以使 系統常 圖中所 所構成 轉盤8 會沿著 均勻的 方向之 此即確 先參閱第1圖’顯示了一種目前習用的掃描裝置6， 得線狀的離子束可以植入於整個晶圓的表面，此一 見於由美商EATON公司所銷售的離子植入機中。如 示’掃描裝置6主要由機械式的轉盤（SpU Disk)8 ’其上並放置了數片的晶圓1 〇。當進行離子佈植時， 會沿著轉轴旋轉（如標號1 2所示），此時離子束1 6 方向16射入晶圓10的表面，如此離子束16將可以 植入所有的晶圓10之中。除了標號12所示的旋轉 外’轉盤8亦會沿著γ方向I 4做掃描式的移動’如 保了離子束1 6可以均勻的植入晶圓1 〇的表面上。 經濟部智慧財產局員工消f合作社印製 為了監測離子束1 6的流量，傳統上會在轉盤8之上連 接導線，並透過與導線相連接的電流量測裝置（圖中未顯示： 而測得離子束1 6的流量。當轉盤8旋轉時，離子束1 6會 持續且間隔的射向晶圓1 〇或晶圓間的分隔巴成15。由於 轉盤8係由導電的材質所構成’當離子束1 6射向間隔區域 15時，其所帶的電荷可立即經由導線傳遞至電流量測裝置 上，而離子束16 &流量即可以透過所測得的電流量而獲 得 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） --------訂---------- - (請先Mlt背面之注意事項再填寫本頁) 466533 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（） 第2圖顯示了在此種傳統方式下，所測得之離子束流 量對應於時間的關係圖。請同時參閱第1圖，第2圖中成 離散狀的實線線段即代表所測得的離子流量，易言之，即 為當離子束1 6射入分隔區域1 5時所測得的流量。而實線 線段之間的不連續區域1 8，即是當離子束1 6射入晶圓1 0 時，轉盤8無法測得離子束1 6流量的時刻。因此從第2圖 可知’利用此傳統方式監測離子束I 6的流量，僅能獲得成 離散狀的離子束流量監測訊號。 接著參閱第3圖，顯示了另一種目前習用的掃描裝置 2 0 ’用以使得線狀的離子束可以植入於整個晶圓的表面， 此一系統常見於由台灣應用材料股份有公司（applied MATERIALS TAIWAN)所銷售的離子植入機中。如圖中所示， 掃描裝置20主要由輪盤23、旋轉馬達30、機械手臂28、 與螺桿2 6所構成，而晶圓2 5則置於輪盤之放射狀輪輻的 末端。當進行離子佈植時，機械手臂2 8會調整於螺桿2 6 之固定位置上，並且將輪盤30盪至離子束22的路徑上， 並同時旋轉輪盤2 3，使得離子束2 2可以均勻的植入每個 晶圓25中。 此外，在掃描裝置2 0的背面設置有離子束擋板（B e am Stop)27’當晶圓25未遮住離子束22的路徑時，離子束22 將會直接射入離子束擋板27的表面。為了量測離子束22 的流量，傳統上會在擋板2 7之上連接導線，並透過與導線 本紙張尺度適用中國國家標準（CNS)A-l規格（210 X 297公爱） (請先閱請背面之注意事項再填寫本頁} 裝--------訂---------線 A7Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs * 1 ^ 466533 A7 _ * __; __B7 V. Description of the invention () 5-1 Field of the invention: The present invention relates to a device and method for monitoring ion current, and particularly relates to a device Device and method for monitoring ion flow of an ion implanter in a semiconductor manufacturing process "5-2 Background of the Invention: Ion Implantation is an important unit process in semiconductor integrated circuit manufacturing. The dopant is plasmatized by an ion implanter, and the required ions are extracted from the plasma by a mass analyzer, and then the extracted ions are accelerated by an electric field to implant the surface of the crystallite . Since the ion implanter can effectively control the energy and dose of implanted ions', the ion implantation process has been widely and frequently used in various semiconductor processes. For example, the source / drain, N-well or P-well, and channel blocking that make up a metal-oxide-semiconductor half-effect transistor (MOSFET) are all within the scope of ion implantation. Due to the increasing integration of semiconductor integrated circuits, the wire width has also entered the level of 0.25 " m or even 0,18 to 111, so how to accurately control the dose and energy of implanted ions' in semiconductor substrates The formation of precise doped regions in the rim has become an important issue for improving and controlling the ion implantation process. In order to accurately control the dose and energy of implanted ions, it is necessary to accurately monitor the ion implanter. _ The ion beam injected into the wafer surface is applicable to this paper. _ 囵 National Standard (CNS) A4 (210 * 297) What, Li) ^ -------- Order .--------_, (Please read the phonetic on the back? Matters before filling out this page) 4 6 65 3 3 A7 B7 V. Invention Description (Quantity. In order to monitor the ion beam flow (Beam Current) in the ion implantation process, traditionally several different monitoring methods have been developed. ”The following is a brief introduction to these conventional methods. First used to make the system The turntable 8 formed in the regular figure will be along a uniform direction. So, first refer to FIG. 1 'shows a currently used scanning device 6. The linear ion beam can be implanted on the entire wafer surface. This is seen in the ion implanter sold by the American company EATON. As shown, 'the scanning device 6 is mainly composed of a mechanical rotary disk (SpU Disk) 8', and several wafers 10 are placed thereon. During the implantation, it will rotate along the axis of rotation (as shown by reference numeral 12). At this time, the ion beam 16 direction 16 is incident on the surface of the wafer 10, so that the ion beam 16 can be implanted in all the wafers 10. In addition to the rotation shown by the reference numeral 12, the turntable 8 will also be scanned along the γ direction I 4 The movement of the ion beam 16 can be uniformly implanted on the surface of the wafer 10. The employee of the Intellectual Property Bureau of the Ministry of Economic Affairs and the cooperative printed by the cooperative in order to monitor the flow of the ion beam 16 is traditionally placed on the turntable 8 Connect the lead wire and pass the current measurement device connected to the lead wire (not shown in the figure: and measure the flow of the ion beam 16. When the turntable 8 rotates, the ion beam 16 will be continuously and spacedly directed to the wafer 10 or the separation bar between the wafers becomes 15. Since the turntable 8 is made of a conductive material, 'When the ion beam 16 hits the interval region 15, the charge carried by it can be immediately transferred to the current measuring device through the wire. Above, and the ion beam 16 & flow can be obtained by measuring the amount of current 3 paper size applicable to China National Standard (CNS) A4 specifications (210 X 297 public love) -------- order- ----------(Please fill in the notes on the back of Mlt before filling this page) 466533 A7 B7 Economy Printed by the Intellectual Property Bureau's Consumer Cooperatives 5. Description of Invention () Figure 2 shows the relationship between the measured ion beam flux and time in this traditional method. Please also refer to Figure 1 and Figure 2 The discrete solid line segment of the medium represents the measured ion flow rate, in other words, the flow rate measured when the ion beam 16 enters the separation area 15. The discontinuity between the solid line segments Region 18 is the time when the ion beam 16 is incident on the wafer 10 and the turntable 8 cannot measure the flow rate of the ion beam 16. Therefore, it can be seen from FIG. 2 that using this conventional method to monitor the flow of the ion beam I 6 can only obtain a discrete ion beam flow monitoring signal. Next, referring to FIG. 3, another conventional scanning device 20 ′ is shown to allow a linear ion beam to be implanted on the entire wafer surface. This system is commonly used by Taiwan Applied Materials Co., Ltd. (applied MATERIALS TAIWAN). As shown in the figure, the scanning device 20 is mainly composed of a disk 23, a rotary motor 30, a robot arm 28, and a screw 26, and the wafer 25 is placed at the end of the radial spokes of the disk. When ion implantation is performed, the robotic arm 28 will be adjusted to the fixed position of the screw 26, and swing the wheel 30 to the path of the ion beam 22, and rotate the wheel 2 3 at the same time, so that the ion beam 2 2 can Evenly implanted into each wafer 25. In addition, an ion beam stop (Beam Stop) 27 'is provided on the back of the scanning device 20. When the wafer 25 does not cover the path of the ion beam 22, the ion beam 22 will directly enter the ion beam stop 27. s surface. In order to measure the flow of the ion beam 22, a wire is traditionally connected on the baffle plate 27, and the paper size is in accordance with the Chinese National Standard (CNS) Al specification (210 X 297 public love). Note on the back then fill out this page} Loading -------- Order -------- Line A7
4 6 65 3 3 五_、發明說明（） 相連接的電流量測裝置（圖中未顯示）而測得離子束2 2的 流量。當輪盤2 3旋轉並遮住了離子束2 2的珞徑時，離子 束22將無法射入離子束播板27的表面，易十之，雷今量 測裝置即無法自離子束擋板2 7上測得離子束2 2之流量。 而當機械手臂28將輪盤23自離子束22的路徑上盘開之 後，電流量測裝置即可自離子束擋板2 7上測得電流量，並 以此推算得離子束2 2的流量。 第4圖顯示了在此種傳統方式下，所測得之離子束流 量對應於時間的關係圖。請同時參閱第3圖，第4圖中成 離散狀的實線線段即代表所測得的離子流量，易言之，即 為當離子束2 2射入離子束撞板2 7時所測得的流量。而實 線線段之間的不連續區域3 2，即是當離子束2 2的路徑被 晶® 2 5所遮斷時’使得電流量測裝置無法測得離子束2 2 流量的時刻。因此從第4圖可知’利用此傳統方式監測離 子束2 2的流量，僅能獲得成離散狀的離子束流量監測訊 號。 雖然傳統上已經提供了數種於離子佈植時監測離子束 流量的方法，然而由於其取樣結杲僅能獲得在離散的時刻 下離子束的流量，因此無法即時（Real-Time)的反應出離子 束在連續時刻下的真實行為。以統計學的原理而言，當取 樣頻率越高時，越能反應取樣物的真實行為。因此，提高 量測離子流的取樣頻率，當邛越真實的瞭解離子束在進行 5 本紙張尺度適用中國國家標準（CNSM4規格（210 X 297公釐了 ------------ 裝--------訂---------故 (靖先閱讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 46 653 3 。 A7 _________B7_______________ 五、發明說明（） 離子佈植時的流量變化。然而，傳統上的監測方法皆受制 於機械設計與功率提供的上限，而植入劑量的均勻度與楂 入總時間的考量也對機械手臂擺盪的次數有所侷限，如此 更高的取樣頻率顯得最令人關切。 综上所述，如何能在進行離子佈植時，即時量測離子 束的流量’或是增加監測離子束流量的取樣頻率，以更精 確的監控離子束在製程中的流量變化，則成為了改善半導 禮製程中離子佈植程序的一項重要的研究方向。 5-3發明目的及概述： 本發明之目的為在提供一種監測離子束流量的裝置與 方法’以利用感應線圈’透過量測感應線圈之感應電流的 方式，而推算出離子束之流量變化，並配合離子植入機所 提供之離子束初始流量，而提供即時的流量監測訊號。 本發明之目的為在提供一種監測離子束流量的裝置， 以利用轉動感應線圏的方式，並透過量測感應線圈之感應 電流的，而推算出離子束之流量變化，進而提供可監測離 子束的訊號》 (請先閱讀背面之注意事項再填寫本頁) 裝----- 訂 線 經濟郤智慧財產局員工消費合作社印製 時出 以所 用機 ， 入 置植 裝子 控離 監由 時’ 即中 之程 流製 子入 離植 種子 一離 了之 露程 揭製 明體 發導 本半 測 量 297公釐） 本紙張尺度適用令國國家標準（CNS)A4規烙（2α 經濟部智慧財產局員工消費合作社印製 4 6 65 3 3 。 A7 _B7_ 五'發明說明（) 之離子束的流量。該離子束流經離子植入機之離子束導 管，並投射於位於離子束導管出口處正對面的擋板上。當 晶圓未被放置於離子束導管與擋板之間時，此擋板可接收 並測得離子束的流量而獲得離子束的初始流量值。 此監控裝置包含感應線圈，以及電流量測裝置。其中， 感應線圈係位於離子束導管的外側，以使得離子束導管中 通過之離子束所產生的磁場，得以通過感應線圈所包園的 區域，並因應於由離子束流量的變化所產生之磁場的變 化，而產生相對應的感應電流。電流量測裝置則與感應線 圈耦合，用以即時量測感應電流，並透過感應電流推算得 到離子束在連續時間下的流量變化，再配合擋板所量測得 之初始流量值，而獲得即時之離子束的流量值。 另外，本發明之監控裝置還可以進一步包含與感應線 圏相耦合的致動器。此致動器可以旋轉感應線圈，使得該 感應線圈得以切割磁場之磁力線，而於該感應線圈的每個 旋轉遇期下，產生對應於該離子束流量的感應電流。如此 透過一定的物理學公式，將可以推算出離子束的流量大 小 〇 由於，本發明之監控裝置可以更精準的量測出離子束 在每個時刻下的流量，因此將可以使得離子佈植的劑量與 能量更容易掌握，並進而改善離子佈植的製程良率。 本紙張尺度適用中國國家標準（CNS>A4規格（2〗0 X 297公釐） ----------- ^^--------訂--------- (請先閱讀背面之注意事項再填寫本頁) 65 3 3 4 6 653 a A7 B7 五、發明說明（ 明 說 單 簡 式 圖 4 圖 第 圖 2 第 應置監 上裝之 統描統 傳 掃 傳 種的用 一 中利 為機為 入 植 子 離 之 程 製 體 導 半 於 用 量 流 束 子 離 之 得 測 所 置 裝 控 植 子 離 之 程 製 體 導 半 於 用 。 應 圖上 係統 關傳 的種 間一 時另 對為 圖 3 第 量 流 束 子 離 之 得 測 所 置 。 裝 置控。 裝監圖 描之係 掃統關 的傳的 t 用間 機利時 入為對 圖 4 第 ο 裝 圖控 意監 示時 成即 組流 統子 系離 的之 機例 入施 植實 子 一 離第 中中 明明 發發 本本 為為 圖圖 5 6 第第 得 測 量 所 置 裝 控 監 的 例 施 。 實 圊一 意第 示之 成明 組發 的本 置為 圖 7 第 裝 控 監 時 。 即 圖流 係子 αβ 离 的之 間例 時施 應實 對二 量第 流中 束明 子發 離本 之為 圖 8 第 得 測 量 所 置。 裝圖 控係 監關 的的 例間 施時 。 實應 圖二對 意第量 示之流 成明束 組發子 的本離 置為之 圖 9 第 (請先閱讀背面之注意事項再填寫本頁) 人 裝--------訂--------- 經濟部智慧財產局員工消費合作社印製 圖 圖 ο 1 1 11 第 第 之 出 提 所 例 施 實 第。 之法 述方 上的 據量 依流 中束 明子 發離 本控 為監 之 出 提 所 例 施 實 二 第。 之法 述方 上的 據量 依流 中束 明子 發離 本控 為監 本紙張尺度適用t國國家標準（CNS)A4規格（2〗〇χ 297公釐） 經濟部智慧財產局員工消費合作社印製 ^ β 65 3 3 Α7 _ί£ 五、發明說明（） 5 - 5圖號對照說明： 6 掃 描 裝 置 8 轉 盤 10 晶 圓 12 旋 轉 方 向 14 Y轴4 帚描方向 15 分 隔 區 域 16 離 子 束 18 不 連 續 區 域 20 掃 描 裝 置 22 離 子 束 23 轉 輪 25 晶 圓 26 螺 桿 27 離 子 束 擋 板 28 機 械 手 臂 30 旋 轉 馬 達 32 不 連 續 區 34 源 質 腔 室 36 管 路 38 離 子 源 40 :Ά 輪 幫 浦 42 質 量 分 析 器 43 通 道 44 質 量 解 析 礼 隙 48 加 速 器 50 導 管 52 聚 焦 電 極板 56 監 控 裝 置 58 晶 圓 60 離 子 束 擋 板 62 離 子 束 64 感 應 線 圈 66 電 阻 器 68 電 源 量 測 裝 置 70 計 算 裝 置 72 磁 場 78 監 控 裝 置 80 感 應 線 圈 82 電 阻 器 83 電 樞 84 電 流 量 測裝置 86 計 算 裝 置 I I U ^1 - I n I n I f - n H 一0*" m —J n I n I (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用_國國家標準（CNS)A4規格（210 X 297公芨） 經濟部智慧財產局員工消費合作社印製 4 6 65 3 3 A? __ 五、發明說明（） 8 8磁場 5 - 6發明詳細說明： 本發明利用電磁感應的原理，以一組設置於離子束週 邊的感應線圈，來達成即時監控離子束之流量變化的效 果》由電磁學的原理可知，由於離子束相當於帶正電的電 流，因此在其周圍會產生環繞的感應磁場。感應線圏則被 放置於感應磁場的範圍令，並使得感應磁場的磁力線通過 由感應顯線圈所包圍的區域。當離子束的流向發生變化， 即代表電流量發生變化，如此將造成其感應磁場的強度連 帶的改變。當感應磁場的強度改變時，即代表感應線圈的 磁通量發生變化，亦即通過感應線圏所包圍之面積的磁力 線密度發生變化。此時，反應線圈將會因應其磁通量的變 化而產生感應電流。由於感應電流與離子束的流量變化之 間，具有一定的物理關係式，因此透過量測感應電流將可 反推回離子束的流量變化。而由於感應電流是即時隨著離 子束流量變化而改變，因此將可以獲得即時監控離子束流 量的效果。以下，則以具體的較佳實施例，來說明本發明 之精神。 參閱第5圖，顯示了本發明中離子植入機的系統組成 示意圖*而其中最主要的部份包含離子源（Ion Source)38、質量分析器（Mass Analysis)42、以及加速器 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ---- 訂------- 4 6 65 3 3 A7 B7 五、發明說明（ (A c c e 1 e r a t 〇 r) 4 8，並分別介紹如下15離子源3 8係位 腔室（Source Chamber)34之中，而源質腔室34則與 幫浦4 0相連接，以保持其中所需的真空度。基本上， 源3 8係由蒸發器、弧光反應室、以及磁鐵等裝置所叙 結構，捧質氣體與載氣透過官路36輪入離子源38中， 於其中的弧光反應室内*使得摻質氣體被電漿化而成為含 有多種離子團的電漿之後*再由離子源38中萃取而出。 % 咴的 教 經濟部智慧財產局員工消費合作社印製 由離子源38中所萃取出的電漿會接著進入質量分杆器 42之中，而從電漿中篩選出進行離子佈植所需的離子種 類。質量分析器42的原理主要是利用電漿中的粒子，具有 各不相同的質量與電何量。當這些粒子行經磁場時，因為 電磁力的效應，將會沿著不同曲率的圓弧路徑運動=由於 其中質量較大或是所帶電荷量較少的粒子，其運動路徑的 曲率也相對較大。因此，利用磁場對帶電粒子的偏析作用’ 可以控制磁場大小的方式來對被加速後的電渡做過濾’並 分離出此電漿所行轨跡與設計符合的曲率半徑通道4 3 ’可 將所需要的離子種類自電漿内的粒子團中分離出來’再經 由質量解析孔隙（Mass Resolving SIit)44濾除不需要的 粒子。舉例而言，假設輸入離子源3 8的摻質氣體為氟化蝴 (BF3)，其電漿中將會包含B、與bf，3等離子。而由 於B〆、、與BF，2等離子行經磁場時的曲率半徑各不相 同，因此可以透過設計後的通道43與質量解析孔隙44 ’ 將硼離子（B +)篩選出來以利後續之離子佈植。 11 I^- — ---111 訂 — I — II I — _^- 「碎先閱if背面之;i.t事項再填寫本I) 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公t ) 經濟部智慧財產局員工消費合作杜印製 4 6 65 3 3 Λ7 _B7_ 五、發明說明（） 而自質量解析孔隙4 4所篩選出的離子，會再受到聚焦 電極板5 2的調整，再行經導管5 0而射入晶圓5 8的表面而 進行離子佈植的程序。而位於導管外側周圍的監控裝置 5 6，將可以提供即時監控離子流的效果。晶圓5 8係透過機 械手臂帶動輪盤，以一定的頻率介入離子束的路徑上，而 完成離子佈植的程序（見第3圖）。在晶圓5 8的後方則具有 離子束擋板60，當晶圊58未介入離子束的路徑上時，離 子束將會直接射向離子束樓板60。此時，由離子束#板60 上所測得的離子束流量，將可以配合監控裝置5 6而提供即 時的離子束流量監測訊號。附帶一提的是，如第5圖所介 紹的離子植入機，可由台灣應用材料股份有限公司所銷售 之高電流離子植入機獲得。 參見第6圖，顯示了本發明之監控裝置56的第一實施 例。如圖中所示，離子束6 2流經導管5 0而射向離子束擋 板6 0，而感應線圈6 4則位於聚焦電極板5 2與質量解析孔 隙44之間。離子束62將會在其流經路徑的周圍形成環繞 的磁場7 2。而感應線圈則被置於磁場7 2中，並使得磁場 7 2的磁力線，得以通過感應線圈6 4所包圍的區域。由於 離子束6 2的流量變化將會造成磁場7 2的強度變化，而磁 場7 2的強度變化將造成感應線圈6 4磁通量的變化，並進 而於感應線圈6 4之上形成感應電流。附帶一提的是，感應 線圈6 4的位置只要能允許磁力線通過其包圍的區域即 本紙張尺度適用中國國家標準（CNS)A4規格mo X 297公复） -----------^'-------訂---------'# (請先閱讀背面之注音W事項再填寫本頁)4 6 65 3 3 V. Description of the invention () The current flow of the ion beam 2 2 was measured by a connected current measuring device (not shown). When the roulette 23 is rotated and covers the diameter of the ion beam 22, the ion beam 22 will not be able to enter the surface of the ion beam seeding plate 27, which is easy. The Lei Jin measurement device cannot be removed from the ion beam baffle. The flux of the ion beam 22 was measured on 2 7. After the robot arm 28 opens the disk 23 from the path of the ion beam 22, the current measuring device can measure the current from the ion beam baffle 27, and calculate the flow of the ion beam 22 using this. . Figure 4 shows the measured ion beam flow versus time in this conventional method. Please refer to FIG. 3 at the same time. The discrete solid line segments in FIG. 4 represent the measured ion flux, in other words, the measured when the ion beam 2 2 enters the ion beam hitting the plate 27. Of traffic. The discontinuous area 3 2 between the solid line segments is the moment when the path of the ion beam 2 2 is interrupted by the crystal 2 5 ′, so that the current measurement device cannot measure the flow of the ion beam 2 2. Therefore, it can be seen from Fig. 4 that by using this conventional method to monitor the flow rate of the ion beam 22, only a discrete ion beam flow rate monitoring signal can be obtained. Although traditionally several methods have been provided to monitor the ion beam flow during ion implantation, its sampling results can only obtain the ion beam flow at discrete moments, so it cannot be reflected in real-time. The true behavior of the ion beam at successive moments. Statistically speaking, the higher the sampling frequency, the more it can reflect the true behavior of the sample. Therefore, increase the sampling frequency for measuring the ion current. When Yue Yue truly understands that the ion beam is being carried out, the paper size applies to the Chinese national standard (CNSM4 specification (210 X 297 mm) ----------- -Install -------- Order --------- So (Jing first read the notes on the back before filling out this page> Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 653 3. A7 _________B7_______________ V. Description of the Invention () Flow change during ion implantation. However, traditional monitoring methods are subject to the upper limit of mechanical design and power supply, and the consideration of the uniformity of implantation dose and the total time of hawthorn also affects the mechanical The number of swings of the arm is limited, and such a higher sampling frequency is of most concern. In summary, how can I measure the ion beam flow in real time during ion implantation? Sampling frequency, in order to more accurately monitor the flux change of the ion beam during the process, has become an important research direction to improve the ion implantation process in the semi-conductor process. 5-3 Objects and Summary of the Invention: Objects of the present invention For mention A device and method for monitoring ion beam flow rate 'using an induction coil' to measure the induction current of the induction coil, to estimate the change in the flow rate of the ion beam, and to match the initial flow rate of the ion beam provided by the ion implanter, and Provide real-time flow monitoring signal. The purpose of the present invention is to provide a device for monitoring the flow of an ion beam, by using a method of rotating an induction wire to measure the induction current of the induction coil, and to estimate the change in the flow of the ion beam. , And then provide a signal that can monitor the ion beam "(Please read the precautions on the back before filling out this page) Installation ----- Ordering economy but the intellectual property bureau employee consumer cooperatives print out the machine used for printing Pretend to control leaving the prison by the time, that is, Cheng Chengliuzi into the planting seeds as soon as the seeds are separated, the exposed process is exposed, and the semi-conductor is 297 millimeters.) This paper size applies the national standard (CNS) A4. Regulation (2α Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 65 3 3. A7 _B7_ Five 'Invention Description () Ion beam flow. The ion beam flow The ion beam guide of the ion implanter is projected on a baffle located directly opposite the exit of the ion beam guide. When the wafer is not placed between the ion beam guide and the baffle, the baffle can receive and measure The flow rate of the ion beam is used to obtain the initial flow value of the ion beam. The monitoring device includes an induction coil and a current measurement device. The induction coil is located outside the ion beam guide, so that the ion beam generated by the ion beam guide passes through the ion coil. The magnetic field can pass through the area enclosed by the induction coil, and the corresponding induced current is generated in response to the change in the magnetic field generated by the change in the ion beam flow rate. The current measurement device is coupled with the induction coil for instant The induced current is measured, and the flux change of the ion beam under continuous time is obtained through the induced current estimation. The instantaneous ion beam flow value is obtained by matching the initial flow value measured by the baffle. In addition, the monitoring device of the present invention may further include an actuator coupled to the induction line. The actuator can rotate the induction coil, so that the induction coil can cut the magnetic field lines, and at each rotation period of the induction coil, an induction current corresponding to the ion beam flow is generated. In this way, through a certain physical formula, the flow rate of the ion beam can be calculated. Because the monitoring device of the present invention can more accurately measure the flow rate of the ion beam at each moment, it can make the ion implantation Dose and energy are easier to grasp, and thus improve the process yield of ion implantation. This paper size applies to Chinese national standard (CNS > A4 specification (2) 0 X 297 mm) ----------- ^^ -------- Order ------- -(Please read the notes on the back before filling out this page) 65 3 3 4 6 653 a A7 B7 V. Description of the invention (Simplified illustration of the form Figure 4 Figure 2 Figure 2 Scanning seeding uses a medium-benefit machine to guide the implantation process. The control system is used to measure the amount of flow. The control system is used to control the implantation process. The application should be shown on the system. The inter-temporal pair is temporarily installed for the measurement of the current flow in Figure 3. The device control. The installation of the monitoring and drawing system is a system that is used to scan the pass. The time is used to install the pair in Figure 4. When the monitoring of control intentions is completed, the opportunity to form a group of subordinates is introduced. Shi Zhishi Zizhong Zhongfa clearly issued the book as an example of the control monitor installed in the Figure 5 6th Diode Survey. 实 圊 一 意The original set by Cheng Ming is shown in Figure 7 when the controller is installed. That is, when the picture flow system αβ is separated. Shi Yingshi's departure from the second volume is set by the first measurement in Figure 8. The installation of the control system is the time of the application. The actual flow of the second volume of the second volume is shown in Figure 2. This part of the hair is placed as shown in Figure 9 (Please read the precautions on the back before filling out this page) Consumption cooperative prints the map ο 1 1 11 The first implementation of the first implementation of the law. According to the law, the amount of data on the side according to the current Shu Mingzi sent away from the control of the implementation of the second implementation of the law. According to the law, the data according to the law Shu Mingzi leaves the control to monitor the paper size Applicable to the national standard (CNS) A4 specification (2〗 〇χ297 mm) Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Manufacturing ^ β 65 3 3 Α7 _ί 5. V. Description of the invention () 5-5 Drawing number comparison description: 6 Scanning device 8 Turntable 10 Wafer 12 Rotation direction 14 Y axis 4 Broom drawing direction 15 Separation area 16 Ion beam 18 Discontinuity Area 20 scanning device 22 ion beam 23 revolutions 25 wafer 26 screw 27 ion beam baffle 28 robot arm 30 rotating motor 32 discontinuity region 34 source chamber 36 pipeline 38 ion source 40: 轮 wheel pump 42 mass analyzer 43 channel 44 mass analysis gift gap 48 accelerator 50 Conduit 52 Focusing electrode plate 56 Monitoring device 58 Wafer 60 Ion beam baffle 62 Ion beam 64 Induction coil 66 Resistor 68 Power measuring device 70 Computing device 72 Magnetic field 78 Monitoring device 80 Induction coil 82 Resistor 83 Armature 84 Current Measuring device 86 Computing device IIU ^ 1-I n I n I f-n H-0 * " m —J n I n I (Please read the precautions on the back before filling in this page) This paper size applies _ National Standard (CNS) A4 Specification (210 X 297 Gong) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 6 65 3 3 A? __ V. Description of the invention () 8 8 Magnetic field 5-6 Detailed description of the invention: This The invention uses the principle of electromagnetic induction to use a set of Coil, to achieve real-time monitoring of changes in the flow rate of the ion beam effect "known principles of electromagnetism, the ion beam current corresponds to positively charged, it will produce an induced magnetic field surrounding therearound. The induction line 圏 is placed in the range of the induction magnetic field, so that the magnetic field lines of the induction magnetic field pass through the area surrounded by the induction display coil. When the ion beam flow direction changes, it means that the amount of current changes, which will cause the intensity of its induced magnetic field to change. When the intensity of the induced magnetic field changes, it means that the magnetic flux of the induction coil changes, that is, the density of the magnetic field lines passing through the area surrounded by the induction line 圏. At this time, the response coil will generate an induced current in response to a change in its magnetic flux. Because there is a certain physical relationship between the induced current and the flux change of the ion beam, measuring the induced current will push back the change in the flux of the ion beam. And because the induced current changes instantaneously with changes in the ion beam flow, you can get the effect of monitoring the ion beam flow in real time. In the following, specific preferred embodiments are used to illustrate the spirit of the present invention. Referring to FIG. 5, a schematic diagram of the system composition of the ion implanter according to the present invention is shown. * The most important part includes an ion source (Ion Source) 38, a mass analyzer (Mass Analysis) 42, and an accelerator. China National Standard (CNS) A4 Specification (2) 0 X 297 mm (Please read the precautions on the back before filling this page) ---- Order -------- 4 6 65 3 3 A7 B7 5 、 Explanation of the invention ((A cce 1 erat 〇r) 4 8, and introduce the following 15 ion source 38 chamber (Source Chamber) 34, and the source mass chamber 34 is connected to the pump 40 In order to maintain the required degree of vacuum therein, basically, the source 38 is a structure described by an evaporator, an arc reaction chamber, and a magnet. The mass gas and the carrier gas pass through the official circuit 36 and enter the ion source 38. Inside the arc reaction chamber *, the dopant gas is plasmatized to become a plasma containing various ion groups * and then extracted from the ion source 38.% Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Education and Economy The plasma extracted from the ion source 38 will then enter the mass splitter 42 The ion species required for ion implantation are selected from the plasma. The principle of the mass analyzer 42 is mainly to use the particles in the plasma, which have different masses and amounts of electricity. When these particles pass through a magnetic field At the same time, because of the effect of electromagnetic force, it will move along a circular path with different curvatures = because the particles with larger mass or less charged amount have a relatively large curvature in the motion path. Therefore, the magnetic field is used The segregation of charged particles' can control the size of the magnetic field to filter the accelerated electricity crossing 'and separate the radius of curvature of the trajectory of the plasma in accordance with the design. The channel 4 3' can convert the required ions The species are separated from the particle clusters in the plasma, and then unwanted particles are filtered out through Mass Resolving SIit 44. For example, suppose that the dopant gas input to the ion source 38 is fluorinated butterfly (BF3 ), The plasma will contain B, and bf, 3 plasmons. And because B〆,, and BF, 2 plasmons have different curvature radii when they pass through the magnetic field, they can pass through the designed channel 43 and Quantitative analysis of pores 44 'Screen out boron ions (B +) to facilitate subsequent ion implantation. 11 I ^-— --- 111 Order — I — II I — _ ^-"Break first read if on the back; it Please fill in this item again I) 11 This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 * 297 g t) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs on employee consumption cooperation 4 6 65 3 3 Λ7 _B7_ V. Description of the invention () The ions screened from the mass-analysis pore 44 are adjusted by the focusing electrode plate 52, and then are injected into the surface of the wafer 58 through the catheter 50 to perform the ion implantation process. The monitoring device 5 6 located around the outside of the catheter will provide the effect of monitoring the ion current in real time. Wafers 5 and 8 are driven by a mechanical arm to rotate the roulette wheel and intervene in the path of the ion beam at a certain frequency to complete the ion implantation process (see Figure 3). There is an ion beam baffle 60 behind the wafer 58. When the crystal beam 58 does not intervene in the path of the ion beam, the ion beam will be directed toward the ion beam floor 60. At this time, the ion beam flow rate measured on the ion beam #plate 60 can be used with the monitoring device 56 to provide an instant ion beam flow rate monitoring signal. Incidentally, the ion implanter described in Figure 5 can be obtained from the high-current ion implanter sold by Taiwan Applied Materials Co., Ltd. Referring to Fig. 6, a first embodiment of the monitoring device 56 of the present invention is shown. As shown in the figure, the ion beam 62 flows through the duct 50 and is directed toward the ion beam blocking plate 60, and the induction coil 64 is located between the focusing electrode plate 52 and the mass analysis aperture 44. The ion beam 62 will form a surrounding magnetic field 72 around its flow path. The induction coil is placed in the magnetic field 72, so that the magnetic field lines of the magnetic field 72 can pass through the area surrounded by the induction coil 64. A change in the flux of the ion beam 62 will cause a change in the intensity of the magnetic field 72, and a change in the intensity of the magnetic field 72 will cause a change in the magnetic flux of the induction coil 64, and an induction current will be formed on the induction coil 64. Incidentally, as long as the position of the induction coil 64 can allow the magnetic field lines to pass through the area enclosed by it, that is, this paper size applies the Chinese National Standard (CNS) A4 specification mo X 297 public copy) ---------- -^ '------- Order ---------' # (Please read the note W on the back before filling this page)
經濟部智慧財產局員工消費合作社印^π 五、發明說明（） 可，然而在較佳的實施例中，建議將感應線圈64所包圍的 面積’故置在與磁％ 7 2之磁力線的垂直方向上，如此感應 線圈64將可在較靈敏的情況下，因應離子流62的變化而 產生相對應的感應電流。 電流量測裝置68透過電阻器6 6與感應線圈64相耦 合’以即時量測肇因於離子束6 2流量變化，感應線圈6 4 所產生的感應電流。如前文所述，由於離子束62的流量變 化與感應線圈64的感應電流之間，存在著一定的物理關係 式，因此可以透過電流量測裝置68所測得的感應電流而反 推出離子束62的電流量變化。而由於離子束擋板5〇可以 測得在特定時刻下離子束62的流量大小，所以再加上電流 量測裝置6 8所推算出的離子束6 2流量變化值，將可以得 到在連續的時間轴下，電子束的流量變化值。 此外，監控裝置5 6可以增加一組與離子束擋板6 〇，以 及電流量測裝置68相耦合的計算裝置70 (所謂的計算裝置 係指具有數位邏輯運算能力的電路或裝置），直接由電流量 測裝置6 8所測得之感應電流，推算出相對應之離子束6 2 之流量變化量’並配合由離子束播板6 0處所獲得之離子束 流直作為相始值’而提供即時反應離子束6 2之流量的輸出 訊號。 第7圖顯示了本發明之第一實施例中，監控裝置所量 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公t ) ^---------訂---------结 (請先閱請背面之沒意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 46 65 3 3 A7 _B7 五、發明說明（） 測之離子束流量對應於時間的關係圖。如圖中所示，粗線 段7 4表示由離子束擋板所測得之離子束流量，而粗線段之 間的折線部份7 6，則為由感應電流推算出的離子束流量變 化值，加上粗線段7 4所代表之初始流量值的結果。由於， 感應線圈可以提供即時的感應電流輸出，因此本發明之監 測裝置所輸出之離子束流量對應於時間的關係，將呈一條 連續的曲線。 參見第8圖，顯示了本發明之監控裝置78的第二實施 例。如圖中所示，離子束6 2射向離子束擋板6 0，而感應 線圈80則位於聚焦電極板52與質量解析孔隙44之間。離 子束6 2將會在其路徑周圍形成環繞的磁場8 8。而感應線 圈則被其中，並使得磁場8 8的磁力線，得以通過感應線圈 8 0所包圍的區域。 監控裝置78包含了一組與感應線圈80相耦合致動器 (圖中未顯示），以旋轉感應線圈8 0使其得以切割磁場8 8 之磁力線。由於旋轉過程將會造成感應線圈8 0之磁通量的 變化，進而於每個旋轉週期下，產生對應於離子束6 2流量 的感應電流。而電流量測裝置8 4透過電阻器8 2、電框8 3 與感應線圈8 0相耦合，可以量測肇因於感應線圈8 0之旋 轉所產生的感應電流。此外，監控裝置78可以增加一組與 電流量測裝置84相耦合的計算裝置86，以直接由電流量 測裝置8 4所測得之感應電流，推算出相對應之離子束6 2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂---------韓 (請先閱讀背面之注意事項再填寫本1} 4 6 6 5 3 3 Λ7 _____ Β7 五、發明說明（） 之流量，輸出代表離子束62之流量的輸出訊號。 當感應線圈8 0旋轉至平行磁場8 8之磁力線方向時， 由於 >又有任何的磁力線通過其中，因此將不會產生任何的 感應電流。而當感應線圈8〇旋轉至垂直磁場88之磁力線 方向時’由於有最多的磁力線通過其中，因此將會產生強 大感應電流》透過量測每一個循環週期下，感應線圏80所 產生的感應電流’將可以透過一定的物理學公式計算出磁 % 88的強度。而獲得磁場88的強度之後，即可反算出離 子束6 2的流量。由於，在此實施例中，係以每一次（或每 半次）的旋轉作為取樣點’進而求得離子束6 2的流量，因 此所獲得之離子束流量對應時間的關係，並非為連續時間 軸下的圖形。然而’感應線圈8 0的轉速可以獨立於掃描裝 置的旋轉速度’因此，可以透過增加感應線圈8〇轉速的方 式而提高取樣頻率’進而獲得近似真實的離子束流量對應 時間的關係圖》 第9圖顯示了本發明之第二實施例中，監控裝置所量 測之離子束流量對應於時間的關係圓^如圖中所示，線段 9 0表示感應線圈旋轉的取樣週期下所測得之離子束流量。 雖然，本發明之監測裝置所輸出之離子束流量對應於時間 的關係’將1現不連續的曲線，然而透過增加感應線图的 轉速，將可以大幅增加取樣的頻率而獲得近乎即時監控離 子束流量的效果。 本紙張尺度適用中@國家標準（CNS)A4規格（210 X 297公笼） (請先閱璜背面之注音？事項再填寫本頁) 裝 訂---------镍 經濟邨智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 46 653 3 A7 _ B7 五、發明說明（） 由於，本發明之览控裝置可以更精準的量測出離子束 在每個時刻下的流量’因此將可以使得離子佈植的劑量與 能量更容易掌握’姐進而改善離子佈植的製程良率。 最後第1 〇圖與第11圓分別顯示了 ，對應第一實施例 與第二實施例中’應用本發明之精神以監控離子.束流量的 方法。首先參閲第10圖’先將感應線圈設置於離子束的週 邊，使得該感應線圈足以受到該離子束所產生之磁場的影 響’如步驟9 2所示。接著’量測感應線圈因應於離子束流 量變化所產生的感應電流’如步驟94所示。再透過感應電 流計算離子束的流量變化值’如步驟9 6所示。最後1以流 量變化值修正離子植入機所提供之初始離子流量值’以獲 得離子束的即時流量值’如步驟9 6所示。 接著參閲第1丨圖’首先將感應線圈於離子東的週邊’ 使得感應線圈足以受到離子束所產生之磁場的影響’如步 驟1 0 0所示。再旋轉感應線圈（如步驟1 0 2)’並量測感應 線圈在每一個旋轉週期下，肇因於感應線圈切割磁場之磁 力線所產生的感應電流，如步驟104所示。最後’透過感 應電流計算離子束的流量值’以獲得離子束的即時流量 值，如步驟106所示。 本發明以較佳實施例說明如上’僅用於藉以幫助了解 16 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） M.--------訂---------# (請先閱讀背面之注意事項再填寫本頁) Λ7 4 6 653 3 _B7_ 五、發明說明（） 本發明之實施，非用以限定本發明之精神，而熟悉此領域 技藝者於領悟本發明t精神後，在不脫離本發明之精神範 保 利 專 C 其定 , 而 換域 替領 化同 變等 之其 同及 等圍 及範 飾請 润申 動利 更專 許之 些附 做後 可視 當當 1 圍 内範 圍護 {請先閲It背面之注意事項再填寫本頁) 裝--------訂---------^ 經濟部智慧財產局員工消費合作杜印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ π 5. Description of the invention (Yes) However, in a preferred embodiment, it is recommended that the area surrounded by the induction coil 64 be placed perpendicular to the magnetic field line of magnetic% 7 2 In the direction, such an induction coil 64 can generate a corresponding induced current in response to the change in the ion current 62 in a more sensitive situation. The current measuring device 68 is coupled to the induction coil 64 through the resistor 66 to measure the induced current generated by the induction coil 6 4 due to the change in the flow rate of the ion beam 62 in real time. As described above, since there is a certain physical relationship between the change in the flow of the ion beam 62 and the induction current of the induction coil 64, the ion beam 62 can be deduced through the induction current measured by the current measurement device 68. The amount of current changes. And because the ion beam baffle 50 can measure the flow rate of the ion beam 62 at a specific time, plus the ion beam 62 flow rate change value calculated by the current measurement device 68, it can be obtained in a continuous The value of the flux change of the electron beam under the time axis. In addition, the monitoring device 56 can add a set of computing devices 70 coupled with the ion beam baffle 60 and the current measuring device 68 (the so-called computing device refers to a circuit or device with digital logic operation capability), The induced current measured by the current measuring device 6 8 is used to calculate the flow rate change of the corresponding ion beam 6 2 ', and provided with the ion beam current obtained from the ion beam seeding plate 60 as the phase starting value'. Output signal for instant response to the flow of ion beam 62. Fig. 7 shows that in the first embodiment of the present invention, 13 paper sizes measured by the monitoring device are applicable to the Chinese National Standard (CNS) A4 specification (210 * 297 g t) ^ --------- order- -------- Conclusion (Please read the unintentional matter on the back before filling out this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 46 65 3 3 A7 _B7 V. Description of the invention () Ion beam measurement A graph of flow versus time. As shown in the figure, the thick line segment 7 4 represents the ion beam flow rate measured by the ion beam baffle, and the broken line portion 76 between the thick line segments is the change value of the ion beam flow rate calculated from the induced current. Add the result of the initial flow value represented by the thick line segment 74. Since the induction coil can provide an instantaneous induced current output, the relationship between the ion beam flow rate output by the monitoring device of the present invention and the time corresponds to a continuous curve. Referring to Fig. 8, there is shown a second embodiment of the monitoring device 78 of the present invention. As shown in the figure, the ion beam 62 is directed toward the ion beam baffle 60, and the induction coil 80 is located between the focusing electrode plate 52 and the mass analysis aperture 44. The ion beam 6 2 will form a surrounding magnetic field 8 8 around its path. The induction coil is contained therein, and the magnetic field lines of the magnetic field 88 can pass through the area surrounded by the induction coil 80. The monitoring device 78 includes a set of actuators (not shown) coupled to the induction coil 80 to rotate the induction coil 80 so that it can cut the magnetic field lines of the magnetic field 8 8. Because the rotation process will cause the magnetic flux of the induction coil 80 to change, and then in each rotation cycle, an induction current corresponding to the flux of the ion beam 62 is generated. The current measuring device 8 4 is coupled to the induction coil 80 through the resistor 8 2 and the electrical frame 8 3 to measure the induced current caused by the rotation of the induction coil 80. In addition, the monitoring device 78 may add a set of computing devices 86 coupled with the current measurement device 84 to directly calculate the corresponding ion beam 6 2 based on the induced current measured by the current measurement device 8 4 Applicable to China National Standard (CNS) A4 (210 X 297 mm) -------- Order -------- Korean (Please read the notes on the back before filling in this 1) 4 6 6 5 3 3 Λ7 _____ Β7 5. The flow rate of the invention (), output signal representing the flow rate of the ion beam 62. When the induction coil 80 rotates to the direction of the magnetic field line parallel to the magnetic field 88, because > The magnetic field lines pass through it, so no induction current will be generated. When the induction coil 80 rotates to the direction of the magnetic field lines of the vertical magnetic field 88, 'there are the most magnetic field lines passing through it, so a strong induction current will be generated.' In one cycle, the induced current generated by the induction wire 圏 80 'can be calculated by a certain physical formula. The intensity of the magnetic% 88 can be calculated. After the intensity of the magnetic field 88 is obtained, the flow rate of the ion beam 62 can be calculated. due to, In this embodiment, each (or every half) rotation is used as the sampling point to obtain the flow rate of the ion beam 62. Therefore, the relationship between the obtained ion beam flow rate and time is not a continuous time axis. However, 'the rotation speed of the induction coil 80 can be independent of the rotation speed of the scanning device'. Therefore, the sampling frequency can be increased by increasing the rotation speed of the induction coil 80 'to obtain an approximate true ion beam flow corresponding to time. 》 FIG. 9 shows the relationship between the ion beam flow rate and the time measured by the monitoring device in the second embodiment of the present invention. As shown in the figure, the line segment 90 represents the measurement under the sampling period of the induction coil rotation. Although the ion beam flow rate output by the monitoring device of the present invention corresponds to time, the curve will be discontinuous, but by increasing the speed of the induction line graph, the sampling frequency can be greatly increased. Obtain the effect of monitoring the ion beam flow in near real time. This paper size is applicable to the @National Standard (CNS) A4 specification (210 X 297 male cage) (please first (Notes on the back? Matters need to be filled out on this page) Binding ------------ Printed by the Nico Economic Village Intellectual Property Bureau employee consumer cooperative printed by the Ministry of Economic Affairs Intellectual Property Bureau employee consumer cooperative printed by 46 653 3 A7 _ B7 V. Explanation of the invention () Because the viewing control device of the present invention can more accurately measure the flow rate of the ion beam at each moment, so it will make it easier to grasp the dose and energy of the ion implantation, and improve the ion implantation. The yield rate of the process is shown in Figures 10 and 11 respectively, which correspond to the method of applying the spirit of the present invention to monitor the flow of ions and beams in the first and second embodiments. First, refer to Figure 10 'First place the induction coil around the ion beam so that the induction coil is sufficiently affected by the magnetic field generated by the ion beam' as shown in step 92. Next, "measure the induction current generated by the induction coil in response to the change in the ion beam flow" as shown in step 94. The value of the flux change of the ion beam is calculated from the induced current as shown in step 96. Finally, the initial ion flux value provided by the ion implanter is corrected by the flux change value to obtain the instant flux value of the ion beam, as shown in step 96. Then refer to FIG. 1 丨 Figure "First place the induction coil around the ion east" so that the induction coil is sufficiently affected by the magnetic field generated by the ion beam "as shown in step 1 0 0. Then rotate the induction coil (such as step 102) and measure the induction current generated by the induction coil cutting the magnetic field lines in each rotation cycle, as shown in step 104. Finally, 'the flux value of the ion beam is calculated through the induced current' to obtain the instant flux value of the ion beam, as shown in step 106. The present invention is explained in the preferred embodiment as above. 'It is only used to help understand the 16 paper sizes applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love). M .-------- Order --- ------ # (Please read the notes on the back before filling out this page) Λ7 4 6 653 3 _B7_ V. Description of the invention () The implementation of the invention is not intended to limit the spirit of the invention, but is familiar with this field After realizing the spirit of the present invention, the artist does not depart from the spirit of the present invention. Paul Poly is determined, and the change of domain replacement and other changes, etc., and the scope and style are subject to permission. Some of the attached items can be viewed within a range of 1 (Please read the precautions on the back of It before filling out this page). -------- Order --------- ^ Intellectual Property of the Ministry of Economic Affairs Bureau's consumer cooperation Du printed paper size applicable to China National Standard (CNS) A4 (210 X 297 mm)