4 63 22 6 6770twf.doc/008 五、發明說明（^ ) 本發日A是有關於一種微影(Photolithography)製程，且 特別是有關於一種動態調整輔助圖案（Assist Feature)尺寸 之微影製程。 隨著積體電路之積集度的提高，整個積體電路之元件 尺寸也必須隨之縮小。而在半導體製程中最舉足輕重的可 說是微影製程，凡是與金氧半導體（Metal-Oxide-Semiconductor ; MOS)元件結構相關的，例如：各層薄膜 的圖案（Pattern)，及摻有雜質（Dopants)的區域，都是由微 影這個步驟來決定的。爲了因應縮小元件之尺寸，一些提 高光罩解析度的方法被不斷地提出來，如光學鄰近校正法 (Optical Proximity Correction, OPC)以及相移式光罩（Phase Shift Mask, PSM)等等。 其中光學鄰近校正法的目的是用以消除因鄰近效應 (Proximity Effect)所造成的關鍵尺寸偏差現象。鄰近效應 是當光束透過光罩上的圖案投影在晶片上時，一方面由於 光束會產生散射現象而使得光束被擴大。另一方面，光束 會透過晶片表面的光阻層經由晶片的半導體基底再反射回 來，產生干涉的現象，因此會重複曝光，而改變在光阻層 上實際的曝光量。 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 於深次微米之微影製程中大多使用深紫外光（Deep Ultra-Violet)光阻層與由ArF雷射所發出來的i94nm的深 紫外光爲曝光光源，以提供更高之解析度。然而，這種深 紫外光之微影製程對於光罩上圖案密度不同區域，在曝光 後於光阻層上所形成的圖案將會由於鄰近效應而產生失真 3 本紙張尺度適用+國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 4 63 22 6 6770twf.doc/008 五、發明說明（V) 程度差異極大的現象。 第1圖所示，爲未使用輔助圖案之微影製程之光阻曝 光圖案關鍵尺寸與圖案間距-圖案寬度之關係圖。其中， 其橫軸爲元件圖案間之距離（Space)與元件圖案寬度（Line) 的比値’稱爲Duty Ratio，而縱軸是於光阻層上形成曝光 兀件圖案之關鍵尺寸（Critical Dimension，CD)。 請參照第1圖’係以深紫外光光阻與一深紫外光光源 進行微影製程’而當光罩上之圖案關鍵尺寸爲160nm時， 於光阻層上欲形成之圖案關鍵尺寸爲80nm。而當元件圖 案間距離與元件圖案寬度之比値越低時（也就是圖案密度 越高），其曝光後於光阻層形成之曝光圖案的關鍵尺寸越 大，而當元件圖案間距離與元件圖案寬度之比値越高時(也 就是圖案密度越低），其曝光後於光阻層形成之曝光圖案 的關鍵尺寸越小，因此不同圖案密度之鄰近效應所造成之 失真差異性極高，甚至高達約90nm。 習知使用光學鄰近校正法校正微影製程所產生之鄰近 效應，係將單一尺寸之輔助圖案放在元件圖案的周圍，利 用調整輔助圖案與元件圖案之距離以校正鄰近效應。然 而，在深次微米的半導體製程中，使用深紫外光光阻的微 影製程，由於固定輔助圖案之尺寸，以及輔助圖案與元件 圖案之間的距離必須大於等於曝光光源之波長的限制，當 元件圖案越來越小，元件圖案間之距離也越來越小，倘若 仍以單一尺寸之輔助圖案用以校正鄰近效應，對於元件圖 案間距離與元件圖案寬度之比値較高之元件圖案（低密度 4 --------!~'i^i----- 訂！！ •咸 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本纸張尺度適用+國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 4 63 22 u 6770twf.d〇c/008 五、發明說明（七） 之元件圖案）雖仍可有效校正其鄰近效應，然而，對於元 件圖案間距離與元件圖案寬度之比値較低之元件圖案（高 密度之元件圖案），將無法有效校正其鄰近效應。 第2圖所示係爲習知以單一尺寸之輔助圖案的光學鄰 近校正法校正微影製程之鄰近效應。其中，由於輔助圖案 之尺寸以及輔助圖案與元件圖案之間的距離限制，所以在 元件圖案間距離與元件圖案寬度之比値約爲1.2至1.3左 右時，難以將輔助圖案插入元件圖案之間，因此曝光後於 光阻上形成之圖案關鍵尺寸將形成較明顯的失真現象，因 此，習知使用單一尺寸之輔助圖案的光學鄰近校正法將無 法完全解決在深紫外光之微影製程中，因不同程度之圖案 密度所產生曝光圖案關鍵尺寸有較大差異的問題。 因此本發明提供一種動態調整輔助圖案之尺寸的微影 製程，避免習知之光學鄰近校正法因使用單一尺寸之輔助 圖案，在深紫外光之微影製程中’於光阻上之曝光圖案關 鍵尺寸具有較大差異的問題。 本發明提出一種動態調整輔助圖案之尺寸的微影製 程，此方法係提供一光罩，且光罩上有密集之元件圖案與 疏鬆之元件圖案，以一計算機行計算之後，在密集之元件 圖案與疏鬆之元件圖案之間分別加入第一輔助圖案與第二 輔助圖案，以校正其鄰近效應。之後’提供一晶圓且晶圓 上形成有一光層，接著，進行一微影製程，在光阻層上形 成密集曝光元件圖案與疏鬆曝光元件圖案。 本發明之輔助圖案之尺寸的選取，可利用計算機計算 — — — — — It I — 1--------— — — — —— —I — (請先閱讀背面之注f項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） ά tr 6770twfdoc/008 A7 B7 五、發明說明（4) 其元件圖案之疏密程度加以選取，以校正個別之元件圖案 之鄰近效應。 本發明依據元件圖案之疏密程度不同，其輔助圖案之 尺寸可隨元件圖案之疏密變化而動態調整。 本發明將輔助圖案尺寸隨元件圖案疏密而變化，可克 服深紫外光微影製程的光學鄰近校正在元件圖案間距離與 元件圖案寬度之比値在1.2-1.3之間的肓點，而縮小疏密 圖案於曝光之後尺寸。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖所示，爲未使用輔助圖案之微影製程之光阻曝 光圖案關鍵尺寸與圖案間距-圖案寬度之關係圖； 第2圖所示，爲習知一種以光學鄰近校正法應用於深 紫外光光阻微影製程之光阻曝光圖案關鍵尺寸與圖案間距 -圖案寬度之關係圖； 第3圖所示，爲根據本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程的操作流程圖； 第4圖所示，爲根據本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程之光罩上視簡圖； 第5圖所示，爲依據本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程之輔助圖案尺寸與元件圖案尺寸 關係圖；以及 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------j i裝--------訂---------故 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 B7 ^ 6322 6 6770twf.doc/008 五、發明說明（s) 第6圖，其繪示依照本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程之光阻層上視圖。 標記之簡單說明： 10 :光罩 12 :第一元件圖案 14 :第一輔助圖案 16 :第二元件圖案 18 :第二輔助圖案 20 :光阻層 22 :第一曝光元件圖案 26 :第二曝光元件圖案 30 :提供具有疏密不同元件圖案之光罩 32 =計算機計算 34 :加入輔助圖案 36 :微影製程 實施例 第3圖，其繪示依照本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程的操作流程圖。 請參照第3圖，首先提供之光罩上具有疏密不同之元 件圖案（步驟30)，接著經由計算機輔助計算32之後，隨 元件圖案疏密程度不同而在元件圖案之間加入不同尺寸之 輔助圖案34，之後，進行一微影製程36，將光罩上之元 件圖案轉移至光阻層上。 第4圖，其繪示依照本發明一較佳實施例之動態調整 7 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） ----------( •裝--------訂---------故 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作杜印製 4 63 22 6 A7 B7 6770twf.doc/008 五、發明說明（t) 輔助圖案尺寸之微影製程之光罩上視圖。 <請先閲讀背面之注意事項再填寫本頁) 請參照第4圖，在光罩10上有第一元件圖案12以及 第二元件圖案16,其中第一元件圖案12爲較密集之圖案， 而第二元件圖案16爲較疏鬆之圖案。以計算機輔助計算 之後，在第一元件圖案之間加入第一輔助圖案14，以校正 第一元件圖案12之鄰近效應，在第二元件圖案16之間加 入第二輔助圖案18,以校正第二元件圖案16之鄰近效應， 其中第一與第二輔助圖案14、18之尺寸例如爲40nm至 80nm之間，而其分別所使用之輔助圖案尺寸之選取，如 第5圖所示。 第5圖，其繪示依照本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程之輔助圖案尺寸與元件圖案尺寸 關係圖。 蟓 經濟部智慧財產局員工消費合作社印製 請參照第5圖，其橫軸是輔助圖案之寬度，縱軸是在 光阻上所形成之曝光圖案之關鍵尺寸，第5圖中不同的符 號個別代表不同密度之元件圖案，其中元件圖案間距離與 元件圖案寬度之比値越小表示元件圖案之密度越大。在第 4圖中當元件圖案密度越大時，經由計算機輔助計算以選 取較適當之輔助圖案尺寸，而必須選用越小尺寸之輔助圖 案，使光阻上所形成之曝光圖案關鍵尺寸越接近光罩上圖 案之尺寸，反之當元件圖案密度越低時，可經由計算機輔 助計算後選用較大尺寸之輔助圖案。因此，以不同輔助圖 案之尺寸配合疏密不同之元件圖案，可使光阻上所形成之 曝光元件圖案差異性較小。 8 本紙張尺度適用中圉國家標準（CNS)A4規格（210 X 297公釐> 經濟部智慧財產局員工消費合作社印製 463226 6770twf.doc/008 A7 _ __B7_— 五、發明說明（1 ) 第6圖，其繪示依照本發明一較佳實施例之動態調整 輔助圖案尺寸之微影製程之光阻層上視圖。經由一微影製 程，將第4圖之光罩1〇上之第一元件圖案12與第二元件 圖案16轉移至光阻層20，形成第一曝光元件圖案22與第 二曝光元件圖案26。而此微影製程所使用之曝光光源波長 大於等於第一元件圖案12與第一輔助圖案14之間的距離 以及第二元件圖案16與第二輔助圖案18之間的距離，較 佳之曝光光源波長爲等於第一元件圖案12與第一輔助圖 案14之間的距離以及第二元件圖案16與第二輔助圖案18 之間的距離。在本實施例中使用之曝光光源例如爲194nm 之深紫外光光源，而光阻層20之材質例如是深紫外光光 阻。 本發明之輔助圖案之尺寸的選取，可利用計算機計算 其元件圖案之疏密程度加以選取，以校正個別之元件圖案 之鄰近效應。 本發明依據元件圖案之疏密程度不同，其輔助圖案之 尺寸可隨元件圖案之疏密變化而動態調整。 本發明將輔助圖案尺寸隨元件圖案疏密而變化，可克 服深紫外光微影製程的光學鄰近校正元件圖案間距離與元 件圖案寬度之比値在1.2-1.3之間的盲點，而縮小疏密圖 案於曝光之後尺寸。 本實施例只以兩種密度之元件圖案說明之，本發明亦 可適用於兩種以上之元件圖案密度，利用計算機計算求得 各元件密度之個別最佳輔助圖案之尺寸’即動態調整其所 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） ^1 ^1 ^1 ^1 ^1 ^1 ^1 *^1 ϋ H^ n H ,ϋ [t n ϋ * I n n n t (請先閱讀背面之注意事項再填寫本頁) ^63226 6770twf.doc/008 A7 __B7___ 五、發明說明（1 ) 需之輔助圖案尺寸，以縮小曝光之圖案尺寸之差異性。 雖然本發明以一較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技術者，在不脫離本發明之精神 和範圍內，當可做些許之更動與潤飾，因此本發明之保護 範圍視後附之申請專利範圍所界定者爲準。 (請先閱讀背面之注意事項再填寫本頁) --裝--------訂--------故 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）4 63 22 6 6770twf.doc / 008 V. Description of the Invention (^) Today, A is about a photolithography process, and especially about a photolithography process that dynamically adjusts the size of the Assist Feature. . As the integration degree of integrated circuits increases, the component size of the entire integrated circuit must also be reduced accordingly. The most important one in the semiconductor process is the lithography process, which is related to the metal-Oxide-Semiconductor (MOS) device structure, such as: the pattern of each layer of thin film (Pattern), and impurities (Dopants) The area of) is determined by this step. In order to reduce the size of the components, some methods to improve the resolution of the mask are continuously proposed, such as Optical Proximity Correction (OPC) and Phase Shift Mask (PSM). The purpose of the optical proximity correction method is to eliminate the key dimension deviation caused by the proximity effect. Proximity effect is when the light beam is projected on the wafer through the pattern on the reticle. On the one hand, the light beam is enlarged due to the scattering phenomenon of the light beam. On the other hand, the light beam will pass through the photoresist layer on the surface of the wafer and then be reflected back through the semiconductor substrate of the wafer to cause interference. Therefore, the light will be repeatedly exposed to change the actual exposure on the photoresist layer. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). In the sub-micron lithography process, deep ultra-violet photoresist layers and ArF mines are mostly used. The deep ultraviolet light emitted by i94nm is used as an exposure light source to provide higher resolution. However, this lithography process for deep ultraviolet light will cause distortion of the pattern formed on the photoresist layer after exposure due to the proximity effect. CNS) A4 specification (210 X 297 mm) A7 B7 4 63 22 6 6770twf.doc / 008 V. Description of invention (V) The phenomenon of great degree difference. Figure 1 shows the relationship between the key size of the photoresist exposure pattern and the pattern pitch-pattern width in the photolithography process without the auxiliary pattern. Among them, the horizontal axis is the ratio of the distance between the element patterns (Space) and the element pattern width (Line), which is called Duty Ratio, and the vertical axis is the critical dimension for forming the exposure element pattern on the photoresist layer. , CD). Please refer to FIG. 1 'for a lithography process using a deep ultraviolet photoresist and a deep ultraviolet light source'. When the key size of the pattern on the photomask is 160 nm, the key size of the pattern to be formed on the photoresist layer is 80 nm. When the ratio between the distance between the element patterns and the width of the element pattern is lower (that is, the higher the pattern density), the greater the key size of the exposure pattern formed on the photoresist layer after exposure, and when the distance between the element patterns and the element is larger, The higher the ratio of the pattern width (that is, the lower the pattern density), the smaller the key size of the exposure pattern formed on the photoresist layer after exposure, so the distortion difference caused by the proximity effect of different pattern densities is extremely high. Even up to about 90nm. It is known to use the optical proximity correction method to correct the proximity effect generated by the lithography process. A single-size auxiliary pattern is placed around the component pattern, and the distance between the auxiliary pattern and the component pattern is adjusted to correct the proximity effect. However, in the deep sub-micron semiconductor process, the lithography process using deep ultraviolet photoresist, because the size of the fixed auxiliary pattern, and the distance between the auxiliary pattern and the element pattern must be greater than or equal to the limit of the wavelength of the exposure light source. The component patterns are getting smaller and smaller, and the distance between the component patterns is also getting smaller. If a single-size auxiliary pattern is still used to correct the proximity effect, the component pattern with a higher ratio of the distance between the component patterns and the component pattern width ( Low density 4 --------! ~ 'I ^ i ----- Order !!! • Salty (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size is applicable to + national national standard (CNS) A4 specification (210 X 297 mm) A7 B7 4 63 22 u 6770twf.d〇c / 008 V. Component description of the invention description (7) can still be corrected effectively Its proximity effect, however, will not be able to effectively correct the proximity effect of a component pattern (high-density component pattern) with a lower ratio of the distance between the component patterns and the component pattern width. Figure 2 shows a conventional optical proximity correction method using a single-size auxiliary pattern to correct the proximity effect of the lithography process. Among them, due to the limitation of the size of the auxiliary patterns and the distance between the auxiliary patterns and the element patterns, it is difficult to insert the auxiliary patterns between the element patterns when the ratio between the distance between the element patterns and the width of the element patterns is about 1.2 to 1.3. Therefore, the key dimensions of the pattern formed on the photoresist after exposure will form a more obvious distortion phenomenon. Therefore, the conventional optical proximity correction method using a single-size auxiliary pattern will not completely solve the problem in the lithography process of deep ultraviolet light. There is a large difference in the key dimensions of the exposure pattern caused by different degrees of pattern density. Therefore, the present invention provides a lithography process that dynamically adjusts the size of the auxiliary pattern, avoiding the conventional optical proximity correction method because a single-size auxiliary pattern is used, and the key dimension of the exposure pattern on the photoresist is used in the lithography process of deep ultraviolet light. Problems with large differences. The invention proposes a lithography process for dynamically adjusting the size of an auxiliary pattern. This method provides a photomask, and the photomask has dense element patterns and loose element patterns. After calculating by a computer line, the dense element patterns are A first auxiliary pattern and a second auxiliary pattern are respectively added to the loose element pattern to correct its proximity effect. After that, a wafer is provided and a light layer is formed on the wafer. Then, a lithography process is performed to form a dense exposure element pattern and a loose exposure element pattern on the photoresist layer. The size of the auxiliary pattern of the present invention can be selected by computer — — — — — It I — 1 --------— — — — — I — (Please read the note f on the back before reading (Fill in this page) Printed on the paper by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives. The paper size is applicable to the Chinese National Standard (CNS) A4 (210x 297 mm). Ά tr 6770twfdoc / 008 A7 B7 V. Description of the Invention The degree of density is selected to correct the proximity effect of individual component patterns. According to the present invention, the size of the auxiliary pattern can be dynamically adjusted according to the density of the element pattern. In the invention, the size of the auxiliary pattern is changed with the density of the element pattern, and the optical proximity correction of the deep ultraviolet lithography process can overcome the point that the ratio between the distance between the element patterns and the width of the element pattern (between 1.2 and 1.3) is reduced. The dense pattern is sized after exposure. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: FIG. 1 The figure shows the relationship between the key size of the photoresist exposure pattern and the pattern pitch-pattern width of the lithography process without the auxiliary pattern. Figure 2 shows a conventional method of applying optical proximity correction to deep ultraviolet light. The relationship between the key size of the photoresist exposure pattern and the pattern pitch-pattern width in the lithography process; Figure 3 is a flowchart of the lithography process for dynamically adjusting the auxiliary pattern size according to a preferred embodiment of the present invention ; Figure 4 is a schematic top view of a photolithography process for dynamically adjusting the size of an auxiliary pattern according to a preferred embodiment of the present invention; Figure 5 is a diagram according to a preferred embodiment of the present invention Relation diagram of auxiliary pattern size and component pattern size for lithography process that dynamically adjusts auxiliary pattern size; and 6 paper sizes are applicable to China National Standard (CNS) A4 specification (210 X 297 mm) --------- -ji -------- Order --------- So (please read the precautions on the back before filling out this page) Printed by A7 B7 ^ 6322 6 6770twf.doc 5. Description of the Invention (s) FIG. 6 is a top view of a photoresist layer in a lithography process for dynamically adjusting an auxiliary pattern size according to a preferred embodiment of the present invention. Brief description of marks: 10: photomask 12: first element pattern 14: first auxiliary pattern 16: second element pattern 18: second auxiliary pattern 20: photoresist layer 22: first exposure element pattern 26: second exposure Element pattern 30: providing a mask with dense and different element patterns 32 = computer calculation 34: adding auxiliary patterns 36: lithography process embodiment 3, which shows a dynamic adjustment auxiliary pattern according to a preferred embodiment of the present invention Flow chart of the lithographic process of size. Please refer to Figure 3. The mask provided first has different element patterns with different densities (step 30), and then after computer-aided calculation 32, different sizes of element patterns are added between the element patterns with different degrees of element patterns. After pattern 34, a lithography process 36 is performed to transfer the element pattern on the photomask to the photoresist layer. FIG. 4 shows the dynamic adjustment according to a preferred embodiment of the present invention. 7 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210x297 mm). ------- Order --------- So (please read the notes on the back before filling out this page) Duty printing of employee cooperation of Intellectual Property Bureau of the Ministry of Economic Affairs 4 63 22 6 A7 B7 6770twf. doc / 008 V. Description of the invention (t) Top view of the lithography process of the auxiliary pattern size. < Please read the precautions on the back before filling this page) Please refer to Figure 4, there is the first on the mask 10. An element pattern 12 and a second element pattern 16, wherein the first element pattern 12 is a denser pattern, and the second element pattern 16 is a looser pattern. After computer-aided calculation, a first auxiliary pattern 14 is added between the first element patterns to correct the proximity effect of the first element pattern 12, and a second auxiliary pattern 18 is added between the second element patterns 16 to correct the second The proximity effect of the element pattern 16, wherein the sizes of the first and second auxiliary patterns 14, 18 are, for example, between 40 nm and 80 nm, and the size of the auxiliary pattern used by them is selected as shown in FIG. 5. FIG. 5 is a diagram showing the relationship between the auxiliary pattern size and the element pattern size of the lithography process for dynamically adjusting the auxiliary pattern size according to a preferred embodiment of the present invention.印 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, please refer to Figure 5, whose horizontal axis is the width of the auxiliary pattern, and the vertical axis is the key dimension of the exposure pattern formed on the photoresist. The different symbols in Figure 5 are individual Represents element patterns with different densities, where the smaller the ratio 距离 between the distance between the element patterns and the width of the element patterns, the greater the density of the element patterns. In Figure 4, when the element pattern density is greater, computer-assisted calculation is used to select a more appropriate auxiliary pattern size. A smaller auxiliary pattern must be selected so that the key size of the exposure pattern formed on the photoresist is closer to the light. The size of the pattern on the hood. Conversely, when the element pattern density is lower, a larger size auxiliary pattern can be selected after computer-aided calculation. Therefore, with the size of different auxiliary patterns combined with different element patterns, the difference of the pattern of the exposed elements formed on the photoresist can be made smaller. 8 This paper size applies the China National Standard (CNS) A4 specification (210 X 297 mm) printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 463226 6770twf.doc / 008 A7 _ __B7_— V. Description of the invention (1) FIG. 6 is a top view of a photoresist layer of a lithography process for dynamically adjusting the auxiliary pattern size according to a preferred embodiment of the present invention. Through a lithography process, the first photomask on FIG. 4 is the first The element pattern 12 and the second element pattern 16 are transferred to the photoresist layer 20 to form a first exposure element pattern 22 and a second exposure element pattern 26. The exposure light source wavelength used in this lithography process is greater than or equal to the first element pattern 12 and The distance between the first auxiliary pattern 14 and the distance between the second element pattern 16 and the second auxiliary pattern 18 is preferably an exposure light source wavelength equal to the distance between the first element pattern 12 and the first auxiliary pattern 14 and the first The distance between the two element patterns 16 and the second auxiliary pattern 18. The exposure light source used in this embodiment is, for example, a deep ultraviolet light source of 194 nm, and the material of the photoresist layer 20 is, for example, a deep ultraviolet photoresist. Of The size of the auxiliary pattern can be selected by using a computer to calculate the density of its component patterns to correct the proximity effect of individual component patterns. According to the present invention, the size of the auxiliary pattern can vary with the component according to the density of the component patterns. The density of the pattern is dynamically adjusted. The present invention changes the size of the auxiliary pattern with the density of the element pattern, which can overcome the optical proximity correction of the deep ultraviolet lithography process, and the ratio of the distance between the pattern of the element and the width of the element pattern is between 1.2 and 1.3. Blind spot between the two, and reduce the size of the dense and dense pattern after exposure. This embodiment is only described with two-density element patterns. The present invention can also be applied to two or more element pattern densities, and each element can be obtained by computer calculation. The size of the individual best auxiliary pattern of density 'is dynamically adjusted. 9 This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 cm) ^ 1 ^ 1 ^ 1 ^ 1 ^ 1 ^ 1 * 1 * ^ 1 ϋ H ^ n H, ϋ [tn ϋ * I nnnt (Please read the notes on the back before filling in this page) ^ 63226 6770twf.doc / 008 A7 __B7___ 5. Description of the invention (1) Required Auxiliary pattern size to reduce the difference in the size of the exposed pattern. Although the present invention is disclosed above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art will not depart from the spirit and scope of the present invention. In addition, when some modifications and retouching can be done, the scope of protection of the present invention is determined by the scope of the attached patent application. (Please read the precautions on the back before filling out this page) --Installation ---- ---- Order -------- The paper printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs applies the Chinese National Standard (CNS) A4 (210 X 297 mm).