經濟部智慧財產局員工消費合作社印製 316 7 A7 _ B7____ 五、發明說明（1) 本發明之傅先權 本案主張1999年3月4日提出之共同待決美國臨時申 請案第6 0 / 1 22,73 1號之優先權。 相關專利申請案 下列臨時申請案與本發明有關： 第60/122,73 3號臨時申請案 第60 / 1 2 1,9 0 1號臨時申請案 第6 0 / 1 2 1,925號臨時申請案 第60 / 1 2 2,822號臨時申請案。 本發明領域 本發明有關非依電性隨機存取記憶體〇更明確言之， 本發明有關一種用於非依電性隨機存取强磁記憶體之具有 單一集極之磁電阻體傳感器〇 本發明背景 電腦記憶體技藝在前二十年內已經歷深遠之進展。一 種第一代電腦記憶體牽涉磁心記憶體技藝〇爲形成各個磁 心，一小型環狀鐵酸鹽磁心予交織成精細電線矩陣〇藉施 加電流通過該等電線，該心將程式化成具有將尉應於邏輯 1或〇之北或南指向通量通路。磁心記憶體之優點爲非依 電性，或不需予更新以記憶所儲存之邏輯信號〇此外，心 記憶體亦爲'"輻射無感性〃，或不受像加瑀射線之離子化 用輻射之影響〇然而，該磁心陣列之組裝極爲勞力密集而 在發展出半導體法時迅即被放棄〇 目前，一種最普遍之記憶體技藝係使用M0S (金氧半 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚) ' ----- I I 1· I 1 ( I --------訂·----J I 1 {請先間讀背面之注項k 莴本頁) 46316 A7 B7 經濟部智慧財產局員工消貲合作社印製 五、發明說明（2) 導體）或CMOS (互補金氧半導體）法0然而一般詳知’由 於電容器之固有漏洩所致，此技藝需將每一記憶格恆定更 新以維持邏輯信號强度。此記憶格恆定更新在電壓來源不 受限制時不成問題，但在類如疊頂電腦及蜂巢式電話之多 種應用中則電源有限。爲處理此種問題，曾將可再充電電 池用於所有可攜帶式電氣裝置。 與使用具有電容性記憶體陣列之裝置相關之問題爲不 方便每小時維持各電池受到正確充電。因此，有需要一種 無需更新且廉價又快速製成之非依電性記憶體裝置〇 有關非依電性隨機存取記憶體之專利實例如下，其中 每一均因其等之支持性敎示而以指述方式納入本文： 頒給Dimyan等之美國專利4,360,899號敎示一種具有 在主要表面或基底上排成陣列之多數磁格之非依電性隨機 存取記憶體〇操作時，選取單一磁格，並在同時施加電脈 衝至一對在鄰近所選格子處相交之導體時以感應方式在相 反之殘餘（亦即永久）狀態間轉換。每一電脈衝均具有一 不足以將所選格子之殘餘狀態以感應方式轉換之振幅〇然 而，各電脈衝之組合振幅至少等於此一轉換所需之振幅。 頒給M a t h e w s之美國專利S , 〇 6 8 , 8 2 6號敎示一種以霍 耳效應爲操作基礎之非依電性靜態磁記憶體裝匱。該裝置 包括一以磁場形式儲存資料之磁性嵌補、一半導體霍耳棒 、以及一對用以放大及緩衝沿霍耳棒所生霍耳電壓之一體 成形雙極電晶體〇使用時，電流被迫向下流過霍耳棒之長 度，導致一霍耳電壓在橫過磁場及電流二者方向之方向上 本紙張尺度適用中國國家標準（CNS)A4規格（21D X 297公爱)~ 一 5 — ----------裝--------訂------1---線 (請先閲讀背面之注意事項良知本頁) 經濟部智慧財產局員工消費合作社印製 463167 A7 B7 五、發明說明（3) 產生〇該雙極電晶體之基座予歐姆耦合於該霍耳棒，以感 測該霍耳電壓一其極性代表所儲存之資訊〇最後，一攜帶 電流之導體系統予用以將資料寫於個別之磁性嵌補。 頒給Lienau之美國專利5,295,〇97號敎示一種具有捣 帶多數獨立之可磁式極化域之非依電性隨機存取記憶體。 各域均包圍以一全寫環路構件，並配置成以其殘餘磁場穿 透一個雙汲極場效電晶體（FET )之霍耳波道。各域以字列 及環節行編組而成，各自藉單一全寫電流經由該包圍環路 構件予以寫入，且各自藉一連接於該FET域予以讀取〇該 記憶體能以各種不同形式製作〇 頒給Lienau等人之美國專利4,791，6ϋ4號敎示一種片 狀隨機存取記憶體。該片狀隨機存取記憶體爲一種以其格 密度及較小之尺寸與功率要求爲特徵之非依電性且可運送 之記憶體，但具有磁心記憶體或磁碟或磁帶之非依電特性 及耐震之運送能力。該片狀隨機存取記憶體之進一步特徵 爲一種包含一個二維磁性基底及一個固定驅動裝置供寫與 讀入該基底之記憶體。此外，每一格位置均附接一固定傳 感元件供傳感資訊〇該記憶媒介不僅包括一匀質之二維基 底，亦包括以光感石版印刷技術形成於該基底內之鐵酸鹽 磁心，其中資訊係儲存於該磁心內，並藉該傳感元件自一 由該磁心所界定之間隙讀取0該發明之記憶格因而可配置 及編組以形成串聯及並聯二者形式之破壞性讀出隨機存取 記憶體，或非破壞性讀出隨機存取記憶體0 頒給McDowell等人之美國專利5,926,414號敎示一種 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------- - -裝-------訂*-----^---^線 (請先閱讀背面之注意事項4·為本頁) 經濟部智慧財產局員工消費合作社印製 A631 6 7 A7 _ B7 五、發明說明（4) 與一載波偏轉型磁場傳感器組合之磁積體電路結構α各種 磁結構均實現一狀況，其中磁場實質上正交於感測電流載 波之行進方向，從而獲致最大靈敏度。藉由將一磁式記憶 格設置於單一最小尺寸MOS元件上，可實現一與FLASH記 憶格之習用DRAM比較爲有利之小格子。由該磁結構所提供 在磁場上較大程度之控制能使一記憶體陣列內各格子間之 互耦減爲最小〇 頒給Lekven之美國專利敎示一種磁鐵記憶體元件，以 及一種用以生產多數此種元件以形成靜態磁記憶體或數位 資訊儲存系統之程序。個別之二元儲存構件藉由通量電路 予提供方向優選性磁特性，以建立優選之磁化軸〇用以驅 動該等個別二元儲存構件（供儲存及感測用）之導體係以 一經編組之型樣配匱，以達成選擇性。亦揭示一種批式生 產程序〇 本發明之目的及摘述 因此*本發明之一特色爲提供一種非依電性强磁隨機 存取記憶體裝置，能迅速讀取每一磁鐡內所儲存之資料並 有效利用最少數量之組件〇明確言之，爲有一種能讀取每 一磁環節（儲存元件）內所儲存資料之非依電性强磁隨機 存取記憶體〇 此外，本發明之一特色爲提供一種强磁記憶格，包含 —環節（6 )，以强磁材料製成，具有一殘餘極性0亦有一 位於該環節附近之寫入線（1 3 )，予耦合以接受一足以指定 該環節（6 )殘餘極性之電流。此外，有一磁傳感器（7 ) ’ 本紙張尺度適用中囤國家標準（CNS)A4規格（210 X 297公釐） -7- -----------------裝--------訂---------線 (請先間讀背面之注項I 烏本頁) A7 463167 _ B7_ 五、發明說明（5) 具有一置於環節（6)附近之磁電阻體（1)，後者具有一回 應該環節（6 )殘餘極性之電流方向。磁電阻體（1 )係耦合 於一輸入線（)用以提供電流至磁電阻體（1 )，且耦合於 一單一輸出線（3b )用以接受來自該磁電阻體之電流〇 —單 —集極（2 )沿磁電阻體（1 )之一側附接於該輸入與輸出線 間，且亦附接於輸出線（3b ) 〇使用時*集極（2 )接受來自 磁電阻體（1 )之電流，並將其導入輸出線（3 b ) 0集極（2 ) 可採取不同之位置或構形*視磁電阻體（1 )之形狀而定。 舉例言之，集極（2 )可在平行於通過磁電阻體（1 )之未偏 壓電流之方向上沿磁電阻體（1 )之一邊緣縱向延伸◦此外 ，該等輸入及輸出線可在不同之個別位置耦合於磁電阻體 (1)，譬如磁電阻體（1)之相反端〇 本發明之另一特色爲提供一記憶格，具有一耦合於磁 電阻體U)及寫入線（13)之控制電路（30) 〇該控制電路在 讀與寫二者功能期間被啓動，並由一讀/寫驅動電路（11) 及一讀/寫開關（9 )構成0當一選定之讀/寫開關被啓動 時，寫功能係藉讀/寫驅動電路（11 )及一寫驅動電路（31) 之同時啓動予以完成，而讀功能係藉寫驅動電路（η)及一 放大器U2)之同時啓動予以完成。 又，本發明之一額外特色爲提供一記憶格，具有一放 大器（1 2 )供放大及偵測自感測線（4 )所接受電流之存在及 量。感測線（4)接受來自輸出線（3b)之電流，並將其導至 放大器（1 2 ) 〇 迄此已相當廣義提列本發明之更重要特色，以使下列 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8- ---^-----I -----Μ,------11^.------>---線 (請先閱讀背面之注項11"本頁) 經濟部智慧財產局員工消貲合作社印数 經濟部智慧財產局員工消費合作社印製 46 316 7 A7 B7 五、發明說明（6) 之詳述可較爲明白，並使此一對業界之貢獻可較被認知0 本發明之另一特色將因以下併同所附圖式及申請專利範圍 之本發明詳述而變成更清楚，或者可藉由本發明之實施而 知嘵〇 簡要圖說 圖1爲本發明一磁電阻體之一示意圖，電流方向予向 右偏壓。 圖2爲本發明一磁電阻體之一市意圖，電流方向予向 左偏壓〇 圖3爲本發明非依電性强磁隨機存取記憶體之一示意 圖。 圖4爲圖3中所示記憶格兀件之側視圖’有一磁傳感 器置於一强磁環節下方〇 圖5爲圖3中所示記憶格元件之側視圖，有一磁傳感 器置於一强磁環節上方〇 應注意，本發明之圖式非按比例0各圖式僅爲示意圖 ，無意描繪本發明之特定參數0各圖式僅意在描述本發明 之選定具體形式，故而不應視爲對本發明之範疇設限0本 發明將經由附圖之使用作額外之明確及詳細說明0各圖間 相同之編號代表相同之元件0 臌佳具體形式詳述 申請人已發現，强磁環節內所儲存二元資料之讀取可 一與其緊密連通之磁傳感器輕易且有效完成〇此一元件無 需活動部件或將所儲存邏輯信號更新，且能於微米及次微 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公芨） •--------------!敦--------t------^-- A靖先閱磧背面之注意事項^.¾本頁) B7 五、發明說明（ 7) 米位準 感 測磁 式 儲存 資 料° 應 3月 注意 t 如本 文 中所 用， Li e η au格 // jV·- 思 指 連 接於 寫電路 及 讀電 路 之控 制 ® m ，係與 —* 所 具長 度 相 對 於 基底 爲成垂 直 方位 之 强磁 TSH. 節一 同工作 〇 —. 部份 之 寫 電 路 位於 該强磁 環 節附 近 ，並 指 定極 性或磁 通 之 方向 〇 該 讀 電 路可 包括一 磁 傳感 器 ，後 者 置於 該强磁 環 節 附近 並 讀 取 磁 通流 之極性 或 方向 〇 現 參 考圖 1 及2 • 責 所示 爲本發 明 具 有磁 電 阻 體 1 (稱 爲MR1 ) 之磁 傳 感器 7 ’具 有一集 極 2 沿磁 阻 體 1 之一 選定邊 置 放〇 此 外， 輸 入線 3b提供 電 流 至MR1 9 輸 出 線3b 接受來 白 MR1 之 電流 0 集極 2係耦 合 於 輸出 線 3b ， 以 便將 其接受 之 電流 導 入輸 出 線3 b 〇接受 白 輸 入線 3a 之 1¾ 流 於一 選定之 方 向（ 左 或右） 予以 偏壓， 如 流 動箭 頭 5 所 指 示。 MR1上 之 ® {JIL 出 現偏 壓 係因 MH1置 於 — 磁環 節 ( 未 示 出） 附近所 致 ，後 者 使其 通 場垂 直延伸 通 過 MR1 t 亦 即 白 傳感 器7下 方 延伸 並 向上 延 伸而 通過書 頁 0 在 圖 1之 情 況下 t 電流 因磁場 殘 ΑΔ. 餘 施加 於 MR1 —hi 而向 右偏壓 0 因此 ， MR1 之 電子 被擠向 右 方 ，導 致 其 大 部 份收 集於集 極 2近 處 〇由 於 集極 2係置 於 該 電子 收 集 處 附近， 故電流 易 於通 入 集極 2 內， 因此將 MR1 之串 聯 電 阻 有 效減 小或降低 〇圖 2 例示 相 反之 偏壓程 序 〇 在此 情 況 下 9 電子 被磁場 向 左偏 壓 ，如 箭 頭5 所指示 〇 然 Τ7Γ7 而， 由 於 集 極 2係 在MR1 之 右側 9 故電 流 被導 離集極 2 〇 因此 f 電 流 更 難以 流向集 極 2 ， 故 有效 增 加M R1之串 聯 電 阻。 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） —1〇一 A7 46 316 7 ____B7_____ 五、發明說明（8) 進入集極2之電流流入輸出線3b內。輸出線3b係耦合 於感測線4 ，如圖3所示〇當電流朝集極2偏壓而降低串 聯電阻時，一較大之電流到達輸出線3b及感測線4 〇然而 ，當電流被偏壓離開集極2而升高串聯電阻時，則有—遠 較小量之電流流入集極2 ，通過輸出線3 b，並進入感測線 4內。因此，該環節之磁殘餘可由感測線4內之電流量予 以測定〇 現參考圖3 ;所示爲本發明之一四X四隨機存取記憶 體陣列1 ϋ ϋ之部份示意圖。有多數個別之强磁環節6各包 圍以一線圈，亦稱爲寫入或驅動線1 3 〇將包含一MR1並在 其上安置集極2之磁電阻體傳感器7置於儲存環節6附近 〇輸入線3a及輸出線3b予附接其上。環節6所產生之對磁 傳感器7有影響之磁場係以破折線8代表〇請注意，環節 6實際上位於傳感器7之正下方或正上方，但最佳爲用破 折線8以示意方式例示之。控制電路30包含讀/寫驅動電 路11、讀/寫開關9 (爲FET之形式）、及輸入放大器1 〇 。控制電路3〇係耦合於寫入線I3及磁傳感器7 〇此種雙重 耦合容許控制電路30在設定（寫）及感測（讀）二者操作 期間使用。寫驅動電路3 1亦耦合於寫入線1 3，但在相反端 〇此外，放大器12如所示耦合於感測線4 〇 在單一記憶格之寫入操作期間內，控制電路30及寫驅 動電路31之適當節段予同時選出。因此，業界熟練人士將 輕易了解電流係導引於在任何旣定記憶格四周之所需方向 上，以將一邏輯"ϋ "或Η1 ”設定於該環節內。 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公釐） -11- -----.---l·· I I I a ---! — I I 訂·---IT!· (請先閱讀背面之注意事項寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 4 6 316 7 B7 _ 五、發明說明（9) 同樣，在單一記憶格之讀操作期間，控制電路3〇及感 測放大器1 2之適當部份係同時啓動〇因此，業界熟練人士 將輕易了解如何可讀取個別之記憶格0請注意，藉由同一 控制電路30與讀電路12及寫電路31之組合使用，所需以操 作該記憶格之電路量總體減小〇 現參考圖4及5;所示爲單一微米或次微米規模强磁 記憶格元件11 0之典型橫斷面。明確言之爲有一磁傳感器 7 〇 —强磁儲存元件（或”環節"）6係置於蓮底22上， 並以一寫入線13包圍。基底22可以任何詳知用於製作基底 之物質製成，譬如矽、玻璃、砷化鎵等，而寫入線1 ϋ可以 業界熟練人士已知之任何合宜導電材料製成，譬如鋁、銅 等〇 —絕綠層20係置於寫入線13與環節6之間。此外，絕 綠層1 9、2 1、及2 3均可用業界詳知之任何合宜絕緣材料製 成，譬如Si02SSi3N4等〇 磁傳感器7置於環節6附近並可緊抵之。磁傳感器7 包含一由高度活動半導體材料譬如銻化銦製成之磁電阻體 1 ，並有一集極3 (示於圖1及2中）沿其一邊緣之部份 置放。該集極可由業界普通技術人士已知之任何導電材料 製成，且耦合於輸出線3 b，示如一來自側邊之單一線〇進 一步顯示者爲一來自控制電路3 ϋ之輸入線3 a，附接於磁電 阻體1 ，在輸出線3 b之相反端〇 請注意，傳感器7與强磁環節6之間未予顯示絕綠層 ，因在此構形中無電位存在於其間◦此可爲一優點，因該 傳感器及環節較有絕緣層將其等分隔之情況更緊密關連， 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -12- .丨：---：--^----„-----裝--- (請先閱讀背面之注意事項^.,.為本頁) 訂· 丨線 經濟部智慧財產局員工消費合作社印製 A7 46316 7 B7_ 五、發明說明（10) 此使記憶格之電靈敏度較大。最後，基底22及記憶格11 0 可以相關業界熟練人士已知之任何方法製作，譬如電鍍、 噴濺、電子束沉積、化學蒸氣沉積、微觀機製、毫微技藝 及分子束磊晶成長。 操作槔式 操作時，並參考圖3，第一步驟爲將邏輯値寫入每一 環節6內。明確言之，讀/寫電路30及寫電路31分別就每 一記憶格予以啓動。視通過寫入線1 3之電流方向而定，將 一邏輯v零〃或、、壹〃單獨儲存於特定環節內。有利者， 不同於舊法設計*整個記憶陣列可在此時與電力斷連或關 閉，並保存該陣列內儲存之所有數位資料〇然則，先前之 記憶體設計必須定常更新以維持其內所儲存之数位資料。 因此，本發明將較舊法設計節省電力。 在本發明中爲讀取數位資料，係將同一讀/寫電路30 與適當之讀電路1 2—併啓動。明確言之，電流係予路徑選 擇至感測電路7 〇電流在其自線3a進入時，大部份將被導 向線集極2或離開之，視相鄰環節6之殘餘極性而定。放 大器1 2將感測所容許通入感測線4內之電流之存在及量， 後者將指示邏輯'零〃或v'壹〃被儲存於相關環節內〇 顯然，可依需要將一邏輯vv壹"或"零〃分派給存在 於感测線4內之較大電流量，或感測線4內之較小電流量 〇因此，在本發明之一具體形式中，感測線4內之指定爲 邏輯 '"壹〃之電流量大於指定爲邏輯零〃之量，而在另 一具體形式中，感測線4內之指定爲邏輯''' 零〃之電流量 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） " _ -13- --lit — :----------- (請先閲讀背面之注意事項^本頁) 訂. -線1 經濟部智tt?財產局員工消費合作社印製 46316 A7 B7 五、發明說明（11) 大於指定爲邏輯''' 壹"之量0 業界熟練人士可構思出許多修改形式及替代排列，而 不背離本發明之精神及範疇’且所附申請專利範圍意在涵 蓋此等修改形式及排列。因此，雖然本發明已如上併同目 前認爲係本發明最實用且較佳之具體形式作個別及詳細說 明，業界普通技術人士均明白可作成多種修改形式包括（ 但不限於）尺寸、材料、形狀、形式、功能、操作方式、 總成、及使用之變化，而不背離本文中所列示之原理及概 念0 舉例言之，在一些情況下可將絕綠層2 2省除。恆無必 要將部件如輸入線3a及輸出線3b準確對準於磁電阻體1上 ，故在鼓勵不同置放位置之下工作可能更佳0 _1111 Γ I I l· I I I I - I 1 ί清先閲璜背面之注意事項^.¾本頁) 訂· 經濟部智慧財羞局員工消費合作社印製 本紙張又度適用中國國家標準（CNS)A4規格（210 X 297公爱） -14-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 316 7 A7 _ B7____ V. Description of the Invention (1) Fu Xianquan of the Invention This case claims a co-pending U.S. provisional application filed on March 4, 1999 No. 6 0/1 22, 73 No. 1 priority. Related Patent Applications The following provisional applications are related to the present invention: Provisional Application No. 60 / 122,73 3 Provisional Application No. 60/1 2 1,9 0 1 Provisional Application No. 6 0/1 2 1,925 Provisional Application No. 60/1 2 Provisional Application No. 2,822. FIELD OF THE INVENTION The present invention relates to non-electric random access memory. More specifically, the present invention relates to a magnetoresistive sensor with a single collector for non-electric random access ferromagnetic memory. BACKGROUND OF THE INVENTION Computer memory technology has undergone far-reaching advancements in the first two decades. A first-generation computer memory involves magnetic core memory technology. To form each core, a small ring-shaped ferrite core is interwoven into a matrix of fine wires. By applying an electric current through these wires, the core is programmed into Point to the flux path north or south at logic 1 or 0. The advantage of magnetic memory is that it is non-electrical, or does not need to be updated to memorize the stored logic signals. In addition, the magnetic memory is also '" radiation non-inductive radon, or free from ionizing radiation such as radon rays 〇 However, the assembly of the magnetic core array is extremely labor-intensive and was abandoned immediately when the semiconductor method was developed. Currently, one of the most common memory technologies uses M0S (Metal Oxide Paper Standard Applies to Chinese National Standards (CNS) A4 Specifications (210 X 297 Gong Chu) '----- II 1 · I 1 (I -------- Order · ---- JI 1 {Please read the note on the back first k Lettuce Page) 46316 A7 B7 Printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by the cooperative V. Invention Description (2) Conductor) or CMOS (Complementary Metal Oxide Semiconductor) Method 0 However, it is generally known 'due to the inherent leakage of capacitors, this technique Each memory cell needs to be constantly updated to maintain the logic signal strength. This memory cell constant update is not a problem when the voltage source is not limited, but in many applications such as stacked computers and cellular phones, the power supply is limited. To address this problem, rechargeable batteries have been used in all portable electrical devices. A problem associated with using devices with capacitive memory arrays is the inconvenience of maintaining each battery properly charged every hour. Therefore, there is a need for a non-dependent memory device that is inexpensive and fast to make without updating. Examples of patents related to non-dependent random access memory are as follows, each of which is supported by its supportive indication Incorporated herein by reference: U.S. Patent No. 4,360,899 issued to Dimyan et al. Shows a non-electrical random access memory having a plurality of magnetic cells arranged in an array on a major surface or substrate. A single magnetic field is selected during operation. And simultaneously apply an electrical pulse to a pair of conductors that intersect adjacent to the selected grid and inductively switch between the opposite residual (ie, permanent) states. Each electrical pulse has an amplitude that is not sufficient to inductively convert the residual state of the selected grid. However, the combined amplitude of each electrical pulse is at least equal to the amplitude required for this conversion. U.S. Patent No. 08,826, issued to Matehews, shows a non-electrostatic static magnetic memory device based on the Hall effect operation. The device includes a magnetic patch for storing data in the form of a magnetic field, a semiconductor Hall bar, and a pair of body-shaped bipolar transistors used to amplify and buffer the Hall voltage generated along the Hall bar. When used, the current is Forced to flow down the length of the Hall stick, resulting in a Hall voltage across the direction of both the magnetic field and the current. This paper size applies the Chinese National Standard (CNS) A4 specification (21D X 297 public love) ~ 5 — ---------- Equipment -------- Order ------ 1 --- line (Please read the precautions on the back page of this conscience page first) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 463167 A7 B7 V. Description of the invention (3) Production: The base of the bipolar transistor is ohmically coupled to the Hall rod to sense the Hall voltage and its polarity represents the stored information. Finally, A current carrying conductor system is used to write data to individual magnetic patches. U.S. Patent No. 5,295,097 issued to Lienau shows a non-electrical random access memory having a plurality of independent magnetic polarization domains. Each domain is surrounded by a full-write loop component and is configured to penetrate the Hall channel of a double-drain field-effect transistor (FET) with its residual magnetic field. The domains are grouped by words and links, and each is written by a single full write current through the enclosing loop member, and each is read by a connection to the FET domain. The memory can be made in various forms. U.S. Patent No. 4,791,6 to 4 issued to Lienau et al. Shows a chip-like random access memory. The chip random access memory is a non-electrical and transportable memory characterized by its cell density and small size and power requirements, but a non-electrical memory with core memory or magnetic disk or tape Characteristics and shock resistance. The chip random access memory is further characterized by a memory including a two-dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate. In addition, a fixed sensing element is attached to each grid position for sensing information. The memory medium includes not only a homogeneous two-dimensional substrate, but also a ferrite core formed in the substrate by photolithography technology. The information is stored in the magnetic core, and the sensing element is used to read 0 from a gap defined by the magnetic core. The memory cell of the invention can be configured and grouped to form serial and parallel destructive reading. Out random access memory, or non-destructive read random access memory 0 US Patent No. 5,926,414 issued to McDowell et al. Indicates that a paper size applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ) -----------Install ------- Order * ----- ^ --- ^ line (please read the precautions on the back 4) This page is the wisdom of the Ministry of Economic Affairs Printed by the Consumer Cooperative of the Property Bureau A631 6 7 A7 _ B7 V. Description of the invention (4) Magnetic circuit structure of the magnetic product body combined with a carrier-deflecting magnetic field sensor α Various magnetic structures achieve a state where the magnetic field is substantially orthogonal to Sensing the direction of travel of the current carrier for maximum sensitivity. By arranging a magnetic memory cell on a single minimum size MOS device, a small cell that is more advantageous than the conventional DRAM of a FLASH memory cell can be realized. The greater degree of control over the magnetic field provided by the magnetic structure can minimize the mutual coupling between the cells in a memory array. The U.S. patent issued to Lekven shows a magnetic memory element and a method for producing Most of these components are programs that form static magnetic memory or digital information storage systems. The individual binary storage components are provided with direction-selective magnetic properties by a flux circuit to establish an optimal magnetization axis. The guiding system for driving the individual binary storage components (for storage and sensing) is grouped in a warp. There is a lack of style to achieve selectivity. A batch production program is also disclosed. The purpose and summary of the present invention is therefore one of the features of the present invention is to provide a non-electrically strong magnetic random access memory device that can quickly read the stored data in each magnetic volume. Data and effective use of a minimum number of components. To be clear, there is a non-electrically strong ferromagnetic random access memory that can read data stored in each magnetic link (storage element). In addition, one of the inventions The feature is to provide a strong magnetic memory cell, including-link (6), made of strong magnetic material, with a residual polarity of 0 and a write line (1 3) near the link, pre-coupled to accept a sufficient designation (6) The residual polarity current. In addition, there is a magnetic sensor (7) 'This paper size applies to the national standard (CNS) A4 specification (210 X 297 mm) -7- ----------------- -------- Order --------- line (please read the note I on the back page first). A7 463167 _ B7_ V. Description of the invention (5) There is a placement link ( 6) A nearby magnetoresistive body (1), which has a current direction corresponding to the residual polarity of the link (6). The magnetoresistive body (1) is coupled to an input line () for supplying current to the magnetoresistive body (1), and is coupled to a single output line (3b) for receiving a current from the magnetoresistive body. The collector (2) is attached between the input and output lines along one side of the magnetoresistive body (1), and is also attached to the output line (3b). When in use * the collector (2) accepts from the magnetoresistive body ( 1) current and lead it into the output line (3b) 0 collector (2) can take different positions or configurations * depending on the shape of the magnetoresistive body (1). For example, the collector (2) may extend longitudinally along one edge of the magnetoresistive body (1) in a direction parallel to the unbiased current passing through the magnetoresistive body (1). In addition, the input and output lines may be Coupling to the magnetoresistive body (1) at different individual positions, such as the opposite end of the magnetoresistive body (1). Another feature of the present invention is to provide a memory cell with a coupling to the magnetoresistive body (U) and a write line. (13) Control circuit (30) 〇 The control circuit is activated during both reading and writing functions, and is composed of a read / write drive circuit (11) and a read / write switch (9). When a selected read When the / write switch is activated, the write function is completed by simultaneously starting the read / write drive circuit (11) and a write drive circuit (31), and the read function is performed by the write drive circuit (η) and an amplifier U2). Start at the same time to complete. In addition, an additional feature of the present invention is to provide a memory cell with an amplifier (1 2) for amplifying and detecting the existence and amount of current received by the self-sensing line (4). The sensing line (4) accepts the current from the output line (3b) and leads it to the amplifier (1 2). So far, the more important features of the present invention have been fairly broadly listed so that the following paper standards are applicable to Chinese national standards (CNS) A4 specification (210 X 297 mm) -8- --- ^ ----- I ----- M, ------ 11 ^ .------ >- --Line (please read note 11 on the back of this page first) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs print out the cooperatives printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives 46 316 7 A7 B7 5. The detailed description can be more clear, and make this pair of industry contributions more recognized. Another feature of the present invention will become clearer by the following detailed description of the present invention with the accompanying drawings and patent application scope, or It can be known through the implementation of the present invention. Brief description: FIG. 1 is a schematic diagram of a magnetoresistive body of the present invention, and the current direction is biased to the right. Fig. 2 is a market view of a magnetoresistive body of the present invention, and the current direction is biased to the left. Fig. 3 is a schematic diagram of a non-electrically strong ferromagnetic random access memory of the present invention. Fig. 4 is a side view of the memory cell shown in Fig. 3 'with a magnetic sensor placed under a strong magnetic link. Fig. 5 is a side view of the memory cell element shown in Fig. 3 with a magnetic sensor placed under a strong magnetic field. At the top of the link, it should be noted that the drawings of the present invention are not to scale. Each drawing is only a schematic diagram, and it is not intended to depict specific parameters of the present invention. Each drawing is only intended to describe the selected specific form of the present invention, so it should not be considered as an illustration of the present invention. The scope of the invention is limited. The invention will be used for additional clarification and detailed description through the use of the drawings. 0 The same numbers between the drawings represent the same components. 0 The specific form is described in detail. The applicant has found that it is stored in the strong magnetic link. The reading of binary data can be completed easily and efficiently by a magnetic sensor that is closely connected to it. This component does not require moving parts or update stored logic signals. A4 specifications (210 X 297 males) • ------------! Dun -------- t ------ ^-A Jingxian read the back Precautions ^. ¾ This page) B7 V. Description of the invention (7) Meter level sensing magnetic Store data ° Note in March. As used in this article, Li e η au // jV ·-refers to the control connected to the write circuit and read circuit ® m, which is perpendicular to the length of * with respect to the substrate The orientation of the strong magnetic TSH. Sections work together 〇—. Part of the write circuit is located near the strong magnetic link, and specifies the polarity or magnetic flux direction. The read circuit may include a magnetic sensor, which is placed near the strong magnetic link And read the polarity or direction of the magnetic flux current. Now refer to Figures 1 and 2. • The magnetic sensor 7 with magnetoresistive element 1 (referred to as MR1) according to the invention 7 'has a collector 2 along the magnetoresistive element 1. Place it on a selected side. In addition, the input line 3b provides current to the MR1. 9 The output line 3b receives the current from the white MR1. The collector 2 is coupled to the output line 3b so that the current it accepts is directed to the output line 3b. The white line is accepted. 1¾ of input line 3a is biased in a selected direction (left or right), such as Movable indicator arrow 5. The MR1 on the MR1 {JIL is biased due to the MH1 being placed near the magnetic link (not shown), the latter extending its field vertically through the MR1 t, which is below the white sensor 7 and upwards through the pages of the book 0 In the case of Figure 1, the t current is biased to the right due to the residual magnetic field ΔΔ. Yu is applied to MR1 —hi. Therefore, the electrons of MR1 are squeezed to the right, causing most of them to be collected near collector 2. Because the collector 2 is located near the electron collecting place, the current is easy to pass into the collector 2. Therefore, the series resistance of MR1 is effectively reduced or reduced. Figure 2 illustrates the opposite bias procedure. In this case, 9 electrons It is biased to the left by the magnetic field, as indicated by the arrow 5. Of course, T7Γ7, and since collector 2 is on the right side 9 of MR1, the current is conducted away from collector 2. Therefore, it is more difficult for f current to flow to collector 2. Therefore, M is effectively increased. Series resistance of R1. This paper scale applies the Chinese National Standard (CNS) A4 specification (210 χ 297 mm) —101—A7 46 316 7 ____B7_____ V. Description of the invention (8) The current flowing into the collector 2 flows into the output line 3b. The output line 3b is coupled to the sensing line 4, as shown in Fig. 3. When the current is biased toward the collector 2 and the series resistance is reduced, a larger current reaches the output line 3b and the sensing line 4. However, when the current is biased, When the pressure is removed from the collector 2 and the series resistance is increased, a much smaller amount of current flows into the collector 2, passes through the output line 3b, and enters the sensing line 4. Therefore, the magnetic residual at this stage can be determined by the current amount in the sensing line 4. Now refer to FIG. 3; a schematic diagram of a part of a four-by-four random access memory array 1 ϋ 发明 according to the present invention is shown. There are many individual strong magnetic links 6 each surrounded by a coil, also known as a write or drive line 1 3. A magnetoresistive sensor 7 containing an MR1 and a collector 2 disposed thereon is placed near the storage link 6. An input line 3a and an output line 3b are attached thereto. The magnetic field generated by link 6 which has an effect on magnetic sensor 7 is represented by dashed line 8. Please note that link 6 is actually directly below or directly above sensor 7, but it is best to use dashed line 8 to illustrate it in a schematic way. . The control circuit 30 includes a read / write drive circuit 11, a read / write switch 9 (in the form of a FET), and an input amplifier 10. The control circuit 30 is coupled to the write line I3 and the magnetic sensor 70. This dual coupling allows the control circuit 30 to be used during both setting (writing) and sensing (reading) operations. The write drive circuit 31 is also coupled to the write line 13 but at the opposite end. Furthermore, the amplifier 12 is coupled to the sense line 4 as shown. During the write operation of a single memory cell, the control circuit 30 and the write drive circuit The appropriate sections of 31 are selected at the same time. Therefore, the skilled person in the industry will easily understand that the current is guided in the required direction around any given memory cell, so as to set a logic " ϋ " or Η1 " in this link. This paper standard applies to China Standard (CNS) A4 specification (21〇χ 297 mm) -11- -----.--- l III III ---! — II order --- IT! (Please read the back first Note on this page) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 4 6 316 7 B7 _ V. Description of the invention (9) Similarly, during the read operation of a single memory cell, the control circuit 30 and the sense amplifier The appropriate part of 2 is activated at the same time. Therefore, the skilled person in the industry will easily understand how to read individual memory cells. 0 Please note that with the combination of the same control circuit 30, read circuit 12 and write circuit 31, the required The overall amount of circuit required to operate the memory cell is reduced. Reference is now made to FIGS. 4 and 5; a typical cross-section of a single micron or sub-micron-scale ferromagnetic memory cell element 110 is shown. Specifically, there is a magnetic sensor 7. —The ferromagnetic storage element (or “link”) 6 is placed on the lotus bottom 22, It is surrounded by a write line 13. The substrate 22 can be made of any material known for making substrates, such as silicon, glass, gallium arsenide, etc., and the write line 1 can be made of any suitable conductive material known to those skilled in the industry, such as aluminum, copper, etc. -The green layer 20 is placed between the writing line 13 and the link 6. In addition, the insulating layer 19, 21, and 23 can be made of any suitable insulating material known in the industry, such as Si02SSi3N4, etc. The magnetic sensor 7 is placed near the link 6 and can be closely abutted. The magnetic sensor 7 includes a magnetoresistive body 1 made of a highly mobile semiconductor material such as indium antimonide, and has a collector 3 (shown in FIGS. 1 and 2) placed along an edge portion thereof. The collector can be made of any conductive material known to those skilled in the art and is coupled to the output line 3 b, shown as a single line from the side. Further shown is an input line 3 a from the control circuit 3 ，, attached Connected to the magnetoresistive body 1 at the opposite end of the output line 3 b. Please note that there is no green insulation layer between the sensor 7 and the ferromagnetic link 6, because no potential exists in the configuration in this configuration. This can be One advantage, because the sensor and link are more closely related to the situation where they are separated by an insulating layer, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -12-. 丨: --- ：-^ ---- „----- install --- (Please read the precautions on the back ^.,. For this page) Order · 丨 Printed by A7 46316, Consumer Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs 7 B7_ V. Description of the invention (10) This makes the memory cell have greater electrical sensitivity. Finally, the substrate 22 and the memory cell 11 0 can be made by any method known to those skilled in the industry, such as electroplating, sputtering, electron beam deposition, chemistry Vapor deposition, micromechanics, nanotechnology, and molecular beam epitaxial growth When operating in a mode operation, and referring to FIG. 3, the first step is to write a logical volume into each link 6. Specifically, the read / write circuit 30 and the write circuit 31 are activated for each memory cell separately. Depending on the current direction of the write line 1 3, a logic v, zero, or, and one are stored separately in a specific link. Advantageously, unlike the old method design, the entire memory array can be disconnected from the power at this time or Close and save all the digital data stored in the array. However, the previous memory design must be updated regularly to maintain the digital data stored in it. Therefore, the present invention will save power by using the older design. In the present invention, To read digital data, the same read / write circuit 30 and the appropriate read circuit 12 are activated together. To be clear, the current is selected from the path to the sensing circuit 7. When the current enters from line 3a, most of it The portion will be directed to the line collector 2 or left, depending on the residual polarity of the adjacent link 6. The amplifier 12 will sense the existence and amount of the current allowed into the sense line 4, which will indicate a logic 'zero' 〃 or v '一 〃 is stored in Obviously, a logic vv one or "zero" can be assigned to a larger amount of current existing in the sensing line 4 or a smaller amount of current existing in the sensing line 4 as required. Therefore, in In a specific form of the present invention, the amount of current designated in the sense line 4 as' logic 'is greater than the amount designated as logic zero, and in another specific form, the designation as logic in the sense line 4 is' '' Zero current current This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) " _ -13- --lit —: ----------- (Please Read the precautions on the back ^ This page) Order. -Line 1 Printed by the Ministry of Economic Affairs, Intellectual Property Bureau, Employee Consumption Cooperative, 46316 A7 B7 V. Description of the invention (11) Greater than the designated as logical '' 'one " the amount 0 Those skilled in the art can conceive many modifications and alternative arrangements without departing from the spirit and scope of the invention 'and the scope of the appended patents is intended to cover such modifications and arrangements. Therefore, although the present invention has been described above and individually and in detail with the specific form which is currently considered to be the most practical and preferred form of the present invention, those skilled in the art will understand that various modifications can be made including, but not limited to, size, material, and shape. , Form, function, operation method, assembly, and use without departing from the principles and concepts listed in this article. For example, in some cases, the green layer 22 can be eliminated. It is not necessary to align components such as input line 3a and output line 3b accurately on magnetoresistive body 1, so it may be better to work under the encouragement of different placement positions. 0 _1111 Γ II l · IIII-I 1注意 Notes on the back ^. ¾ This page) Order · This paper printed by the Consumer Cooperatives of the Ministry of Economic Affairs and the Smart Finance Bureau is in compliance with China National Standard (CNS) A4 (210 X 297 public love) -14-