461016 6676twf.doc/006 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（/ ) 本發明係有關於一種半導體製程之機台，特別是有關 於一種晶圓固定機台的結構。 在半導體製造的過程中，晶圓固定機台是利用靜電吸 附的方式將晶圓（wafer)固定在該機台的靜電卡盤 (electrostatic chuck, ESC)上。而在半導體元件的製造過程 中，由於使用許多腐蝕性的氣體，再加上電漿的撞擊，對 於靜電卡盤的損壞非常的嚴重，因此許多機台皆已改用陶 瓷式的靜電卡盤(ceramic-ESC)。 請同時參考第1圖與第2圖，第1圖是習知一種晶圓 固定機台，而第2圖爲繪示第1圖之晶圓固定機台的剖面 圖。習知的晶圓固定機台8的設計是將陶瓷式靜電卡盤1〇 以螺絲11鎖在無線電波波頻平板13(radio frequency plate, RF plate)上，而機台8上一共有八支螺絲11平均分佈於靜 電卡盤10周圍，當這兩個部分鎖緊時，其接觸面還是會 有一道細縫15(micro gap)。當RF電漿(RF plasma)點起， 以處理固定在靜電卡盤10上的晶圓12時，電漿粒子會沿 著上述的微細溝縫15滲入機台8之中，再加上螺絲11未 加以陽極處理，更會造成在陶瓷式靜電卡盤10與無線電 波波頻平板13兩層之間的螺絲11固定處，產生嚴重的電 弧 16(arcing)。 而當電弧發生時’將會產生高溫，而這高溫將藉由螺 絲Π快速傳導至陶瓷式靜電卡盤1〇的周圍，使得製程中 陶瓷式靜電卡盤10周圍的溫度高於陶瓷式靜電卡盤1〇中 央的溫度。因此，吸附在陶瓷式靜電卡盤10上的晶圓12 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ----------------- 訂-----I·線-.} (請先閱讀背面之注意事項再填寫本頁) 461016 6676twf.doc/006 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（乙） 其周圍區域Π的溫度將高於晶圓中央區域18的溫度，如 第3圖所示，而因溫度不同的影響，將可能造成晶圓12 周圍高溫區域Π與中央低溫區域18蝕刻速率(etching rate) 不同，造成晶圓12的均句度（uniformity)不良與良率（yield) 的下降。 再者，因電弧所產生的高溫將會損害晶圓固定機台的 結構，因而減短陶瓷式靜電卡盤及無線電波波頻平板的壽 命，增加製程的成本。 因此，本發明的主要目的，在提供一種晶圓固定機台， 以防止在電漿製程中機台內有電弧的產生。 本發明的另一主要目的，在提供一種晶圓固定機台， 以避免因電弧所產生的高溫，造成晶圓溫度不均，使得晶 圓蝕刻速率不同而影響良率。 本發明的再一主要目的，在提供一種晶圓固定機台， 以避免因電弧所產生的高溫，減短陶瓷式靜電卡盤及無線 電波波頻平板的壽命。 根據上述之目的，本發明提供了一種晶圓固定機台， 至少包括由0型環、絕緣底座、無線電波波頻平板以及陶 瓷式靜電卡盤所構成。其中絕緣底座上有一環形凹溝，用 以使0型環定著在絕緣底座上，無線電波波頻平板，位於 言亥糸色緣底座上，且無線電波波頻平板位於環形凹溝範圍內 @ °以及陶瓷式靜電卡盤位於絕緣底座與無線電波波頻平 板上’且陶瓷式靜電卡盤將無線電波波頻平板包覆住。再 者’此外，本發明所提供的一種晶圓固定機台，更包括有 '張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） ------------Μ ----I丨·—丨—訂------ (請先閱讀背面之注意事項再填寫本頁) 線· A7 B7 461016 6676twf. doc/006 五、發明說明（3) 複數支螺絲，用以固定陶瓷式靜電卡盤與絕緣底座。 由於本發明將陶瓷式靜電卡盤覆蓋住無線電波波頻平 板，而使無線電波波頻平板不會外露，加上〇型環阻絕作 用，所以電漿粒子不會進入晶圓固定機台內而發生電弧， 因此不會產生高溫而造成晶圓溫度不均，使得晶圓蝕刻速 率不同而影響良率。 爲讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文特舉一較佳實施例，並配合所附圖示，作詳細說明如 下： 圖式簡單說明： 第1圖爲繪示習知一種晶圓固定機台的立體圖； 第2圖爲繪示根據第1圖之晶圓固定機台的剖面圖； 第3圖爲繪示當電弧發生時，晶圓上溫度高低不同的 區域， 第4圖爲繪示本發明之一較佳實施例之晶圓固定機台 的立體分解圖；以及 第5圖爲繪示根據本發明之一較佳實施例之晶圓固定 機台的剖面圖。 圖式標記說明： 8、19 :晶圓固定機台 10、 20 :陶瓷式靜電卡盤 11、 21 :固定用螺絲 12 :晶圓 13、23 :無線電波波頻平板 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------------Γ·裝 i-„ (請先閲讀背面之注意事項再填寫本頁) tr---------線 經濟部智慧財產局員工消費合作杜印製 6676twf. doc/00 6 _B7__ 五、發明說明（+) 14、 24 :絕緣底座 15、 25 :細縫 16 :電弧 17:晶圓周圍高溫區域 18 :晶圓中央低溫區域 22、29 :螺絲鎖孔 26 : 0型環 27 :內凹空間 28 :凹溝 實施例 請參閱第4圖與第5圖，其爲分別繪示本發明之一較 佳實施例之晶圓固定機台之立體分解圖與剖面圖。 請參閱第4圖，本發明之晶圓固定機台19包括有一 0型環26，一絕緣底座24，一無線電波波頻平板23，一 陶瓷式靜電卡盤20，以及複數支用以固定絕緣底座24與 陶瓷式靜電卡盤20的螺絲21。 經濟部智慧財產局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 其中◦型環26的材質爲具有彈性的物質，例如是橡 膠。螺絲21的數目例如是八支，皆已經過陽極處理，避 免因接觸電漿粒子而累積電荷。絕緣底座24上至少有八· 個螺絲鎖孔29等距分佈於周圍，而沿著這些螺絲鎖孔29 的外側，形成有一環型凹溝28，這個凹溝28可以使〇型 環26定著在絕緣底座24上。無線電波波頻平板23位於 絕緣底座24的上方中央，其範圍則小於絕緣底座24上那 些螺絲鎖孔29所圍繞的範圍，當以螺絲21鎖緊時，無線 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） A7 B7 4 6 1 0 1 6 6676twf.doc/006 五、發明說明（γ) 電波波頻平板23將不會與這些螺絲21接觸。陶瓷式靜電 卡盤20則位於絕緣底座24與無線電波波頻平板23的上 方，卡盤20下方具有一內凹空間27，其周圍亦平均分佈 有八個螺絲鎖孔22,這些螺絲鎖孔22的位置與絕緣底座 24上的螺絲鎖孔29相對應，當螺絲21經由螺絲鎖孔22 及29將陶瓷式靜電卡盤20與絕緣底座24鎖緊時，該卡 盤20下方的內凹空間27剛好可以將無線電波波頻平板23 包覆住。 請參閱第5圖，當本發明之晶圓固定機台2完成組裝 時，無線電波波頻平板23將被陶瓷式靜電卡盤20與絕緣 底座24包藏住，雖然螺絲21鎖緊時，陶瓷式靜電卡盤20 與絕緣底座24外部的接觸面仍有一道細縫25存在，但是 在陶瓷式靜電卡盤20與絕緣底座24之間及螺絲21的外 側存在有一具有彈性之0型環26，可以將◦型環26以內 的空間完全密封起來，因此在進行電漿製程時，可以隔絕 電漿粒子由接觸面的細縫25進入機台2，防止電弧發生以 及因電弧所產生的高溫。 如此一來，本發明將可避免高溫藉由螺絲快速傳導致 已陶瓷式靜電卡盤周圍而產生晶圓周圍區域的溫度高於中 央區域溫度的現象，進而杜絕因晶圓上溫度佈均勻而造成 晶圓周圍區域與中央區域之蝕刻速率不同的問題，使得晶 圓具有較佳之均勻度，提升產品的良率。同時，因爲本發 明可以防止電弧的發生以及因電弧所產生的高溫，因此晶 圓固定機台的壽命將可以被延長。 7 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）461016 6676twf.doc / 006 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs B7 V. Description of the Invention (/) The present invention relates to a semiconductor manufacturing machine, and in particular to the structure of a wafer fixing machine. In the semiconductor manufacturing process, the wafer fixing machine uses wafers to fix wafers to the electrostatic chuck (ESC) of the machine using electrostatic adsorption. In the manufacturing process of semiconductor components, due to the use of many corrosive gases, coupled with the impact of plasma, the electrostatic chuck is very severely damaged, so many machines have switched to ceramic-type electrostatic chucks ( ceramic-ESC). Please refer to FIG. 1 and FIG. 2 at the same time. FIG. 1 is a conventional wafer fixing machine, and FIG. 2 is a cross-sectional view showing the wafer fixing machine of FIG. The conventional wafer fixing machine 8 is designed to lock the ceramic electrostatic chuck 10 with a screw 11 on a radio frequency plate 13 (radio frequency plate, RF plate), and the machine 8 has a total of eight The screws 11 are evenly distributed around the electrostatic chuck 10. When the two parts are locked, there will still be a micro gap 15 on the contact surface. When the RF plasma is started to process the wafer 12 fixed on the electrostatic chuck 10, the plasma particles will infiltrate into the machine 8 along the above-mentioned micro-gap 15 and the screw 11 Without anodizing, a serious electric arc 16 (arcing) will be generated at the fixing place of the screws 11 between the ceramic electrostatic chuck 10 and the two layers of the radio wave frequency plate 13. When an arc occurs, a high temperature will be generated, and this high temperature will be quickly conducted to the ceramic electrostatic chuck 10 by the screw Π, so that the temperature around the ceramic electrostatic chuck 10 is higher than the ceramic electrostatic chuck during the process. The temperature in the center of the tray 10. Therefore, the wafer 12 adsorbed on the ceramic electrostatic chuck 10 3 This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------------- -Order ----- I · line-.} (Please read the notes on the back before filling this page) 461016 6676twf.doc / 006 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economics B7 V. Description of Invention (B ) The temperature of the surrounding area Π will be higher than the temperature of the central area 18 of the wafer, as shown in Figure 3. Due to the influence of different temperatures, the etching rate of the high temperature area Π and the central low temperature area 18 around the wafer 12 may be caused (etching rate) is different, which results in poor uniformity of wafer 12 and decrease in yield. In addition, the high temperature generated by the arc will damage the structure of the wafer fixing machine, thus shortening the life of ceramic electrostatic chucks and radio wave flat plates and increasing the cost of the process. Therefore, the main object of the present invention is to provide a wafer fixing machine to prevent arcing from occurring in the machine during the plasma process. Another main object of the present invention is to provide a wafer fixing machine to avoid the uneven temperature of the wafer caused by the high temperature caused by the arc, which will affect the yield due to the different wafer etch rates. Yet another main object of the present invention is to provide a wafer fixing machine to avoid the high temperature generated by the arc and shorten the life of the ceramic electrostatic chuck and the radio frequency wave plate. According to the above object, the present invention provides a wafer fixing machine, which at least comprises a 0-ring, an insulating base, a radio wave flat plate, and a ceramic electrostatic chuck. There is a circular groove on the insulating base, which is used to fix the 0-ring on the insulating base. The radio wave plate is located on the base of the Yanhai color edge, and the radio wave plate is within the range of the annular groove. ° and the ceramic electrostatic chuck is located on the insulating base and the radio wave frequency plate ', and the ceramic electrostatic chuck covers the radio wave frequency plate. Furthermore, in addition, a wafer fixing machine provided by the present invention further includes a 'sheet size applicable to Chinese National Standard (CNS) A4 specification (210 X 297 public love) ----------- -Μ ---- I 丨 · — 丨 —Order ------ (Please read the notes on the back before filling this page) Line · A7 B7 461016 6676twf. Doc / 006 V. Description of the invention (3) Plural A support screw is used to fix the ceramic electrostatic chuck and the insulating base. Since the invention covers the radio wave plate with the ceramic electrostatic chuck, so that the radio wave plate will not be exposed, and the O-ring blocking effect is added, the plasma particles will not enter the wafer fixing machine and An arc occurs, so the high temperature does not cause the wafer temperature unevenness, which makes the wafer etching rate different and affects the yield. In order to make the above-mentioned objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings, and described in detail as follows: Brief description of the drawings: Figure 1 is a drawing A perspective view of a wafer fixing machine is known; FIG. 2 is a cross-sectional view showing the wafer fixing machine according to FIG. 1; FIG. 3 is a diagram showing regions with different temperature levels on the wafer when an arc occurs FIG. 4 is an exploded perspective view showing a wafer fixing machine according to a preferred embodiment of the present invention; and FIG. 5 is a sectional view showing a wafer fixing machine according to a preferred embodiment of the present invention Illustration. Description of graphical symbols: 8, 19: wafer fixing machine 10, 20: ceramic electrostatic chucks 11, 21: fixing screws 12: wafers 13, 23: radio wave flat panel 5 This paper size is applicable to China Standard (CNS) A4 specification (210 X 297 mm) ------------ Γ · Install i- „(Please read the precautions on the back before filling this page) tr ----- ---- Consumer cooperation with employees of the Intellectual Property Bureau of the Ministry of Economics, printed by 6676twf. Doc / 00 6 _B7__ V. Description of the invention (+) 14, 24: Insulating base 15, 25: Slit 16: Arc 17: Around wafer High temperature area 18: Wafer central low temperature area 22, 29: Screw lock hole 26: 0-ring 27: Recessed space 28: Recessed groove For an example, please refer to FIG. 4 and FIG. 5, which respectively illustrate the present invention. A perspective exploded view and a sectional view of a wafer fixing machine according to a preferred embodiment. Referring to FIG. 4, the wafer fixing machine 19 of the present invention includes a 0-ring 26, an insulating base 24, and a radio wave. Frequency plate 23, a ceramic electrostatic chuck 20, and a plurality of screws 21 for fixing the insulating base 24 and the ceramic electrostatic chuck 20. Ministry of Economic Affairs Intellectual Property Printed by the employee's consumer cooperative (please read the precautions on the back before filling out this page) where ◦ The material of the ring 26 is elastic, such as rubber. The number of screws 21 is eight, for example, all of which have been anodized. Avoid accumulating charges due to contact with plasma particles. At least eight screw lock holes 29 on the insulating base 24 are equally spaced around, and along the outside of these screw lock holes 29, a ring-shaped groove 28 is formed. The groove 28 can fix the O-ring 26 on the insulating base 24. The radio wave plate 23 is located at the upper center of the insulating base 24, and its range is smaller than the area surrounded by the screw lock holes 29 on the insulating base 24. When the screw 21 is fastened, the paper size of the wireless paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) A7 B7 4 6 1 0 1 6 6676twf.doc / 006 V. Description of the invention (γ) Radio frequency plate 23 will not be in contact with these screws 21. The ceramic electrostatic chuck 20 is located above the insulating base 24 and the radio wave plate 23, and there is a recessed space 27 below the chuck 20, and eight are evenly distributed around it screw Lock holes 22, the positions of these screw lock holes 22 correspond to the screw lock holes 29 on the insulating base 24. When the screws 21 lock the ceramic electrostatic chuck 20 and the insulating base 24 through the screw lock holes 22 and 29, the The recessed space 27 below the chuck 20 can just cover the radio wave plate 23. Please refer to FIG. 5. When the wafer fixing machine 2 of the present invention is assembled, the radio wave plate 23 will be The ceramic electrostatic chuck 20 and the insulating base 24 are hidden. Although the screw 21 is tightened, there is still a thin gap 25 on the contact surface between the ceramic electrostatic chuck 20 and the insulating base 24. However, in the ceramic electrostatic chuck 20 Between the insulating base 24 and the outside of the screw 21, there is a 0-ring 26 with elasticity, which can completely seal the space within the ring 26, so that the plasma particles can be isolated from the contact surface during the plasma process. The fine slits 25 enter the machine table 2 to prevent arcing and high temperature caused by the arc. In this way, the present invention can avoid the phenomenon that the temperature of the area around the wafer is higher than the temperature in the center area of the ceramic electrostatic chuck caused by the rapid transmission of high temperature by the screw, thereby preventing the temperature distribution on the wafer from being uniform. The problem of different etching rates in the surrounding area and the central area of the wafer makes the wafer have better uniformity and improves the yield of the product. At the same time, since the present invention can prevent the occurrence of an arc and the high temperature generated by the arc, the life of the wafer fixed table can be extended. 7 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
II訂---------線 > ...V (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 461016 A7 6676twf.doc/006 _B7_ 五、發明說明（G) 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先閲讀背面之注意事項再填寫本頁) -I- I I Ί 訂----- 經濟部智慧財產局員工消費合作社印製 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Order II --------- line > ... V (Please read the notes on the back before filling out this page) Printed by the Employee Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 461016 A7 6676twf.doc / 006 _B7_ Five Explanation of the invention (G) Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications without departing from the spirit and scope of the present invention. Changes and retouching, so the protection scope of the present invention shall be determined by the scope of the appended patent application. (Please read the notes on the back before filling out this page) -I- II Ί Order ----- Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 8 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)