公％刻P A7 ----- ----- B7 五、發明説明（（） 本發明是有關於一種之半導體製程裝置，且特別是有 關於一種蝕刻機台中，在進行傳送校正時，可進行通氣(vent) 之蝕刻反應室（chamberh 在半導體製程中，晶片（wafer)在傳送時之精確度對於 .製程的進行具有相當大的影響。當傳送位置發生偏移時， 對於需要高度精確度之半導體製程而言，其容易造成製程 均勻度(uniformity)的降低。尤其是在蝕刻製程中，傳送的 偏移直接影響鈾刻的效果。 當蝕刻機台在進行預防維護(PM)期間，進行傳送校正 時，傳送校正的的良好與否，直接關係著平時製程進行時 傳送的偏移度。因此，傳送校正的良窳會直接影響爾後在 蝕刻製程進行時的蝕刻結果。 第1圖是繪示習知一種蝕刻機台之部分配置示意圖。 使用此配置方式之蝕刻機台，比如是日本t.e.l公司第 S5DP型之蝕刻機台。 請參照第1圖，蝕刻機台100至少包括供氣系統11〇、 蝕刻反應室12〇、以及抽氣系統130。蝕刻機台1⑻除了 上述之裝置外，尙包括其他相關之裝置，不在此一一列舉。 蝕刻反應室120爲一個密閉空間，由上反應室與下反 應室以所共同組成，也就是說，上、下反應室122與124 爲彼此通連。供氣系統11〇經由管路lu供給氣體至上反 :在管路112上配置閥門114，藉：制氣體的 ί、應。抽颯系統Π0經由管路η2連接至下反應室124， 抽出反應室中的氣體。也就是說，在通氣（vent^J\氣體 本紙張从適用中國國家擦¥TcNS ) A杉見格 (請先閱讀背面之注意事項再填寫本頁) 訂_ 經濟部智慧財產局員工消費合作社印製 4842twf.doc/008 A7 B7 五、發明説明（π) 經由管路112進入反應室120，再經由管路132自反應室 120中抽離。 然而，在傳送校正時，爲了檢視傳送位置的正確度， 必須將反應室12〇打開（亦即將上反應室122掀開），如第 2圖所示。但如此一來即無法進行通氣，使得傳送校正必 須在大氣環境下進行，亦即無法與製程進行時的真空環境 相同。而且，如第3圖所示，在大氣下進行傳送校正時， 在反應室120內，晶片（wafer)150與支撐晶片150的靜電 盤（electrostatic chuck)160之間會產生靜電吸附力。當頂針 (push-pin)162頂起晶片150時，由於晶片150與靜電盤160 之間的吸附力，造成晶片150的搖晃，也因而造成傳送時 的偏移，而無法得到正確的傳送校正位置。 習知解決靜電吸附力的方法之一，是在晶片150與靜 電盤160之間放置小紙片，藉以隔離兩者之間的吸附力， 來降低晶片11 2〇升起時振動搖晃之現象，以改善傳送的偏 移度。然而，仍無法進行抽真空及通氣，模擬實際的生產 狀況，使得傳送校正之效果無法有效提昇。 所以，如何能在傳送校正時進行抽真空及通氣，模擬 實際生產狀況，排除晶片升起時振動搖晃之現象，使傳送 偏移度可以得到改善，以確保校正位置的良好。 因此本發明提供一種蝕刻反應室，可在真空下作傳送 校正’並進行通氣，與實際生產狀況相似，排除晶片升起 時振動搖晃之現象，確保校正位置良好，以得到最佳效果。 本發明提供一種鈾刻反應室，至少包括：一上反應室 (#先閱讀背面之注意事項再填寫本頁) 訂-Public A: P A7 ----- ----- B7 V. Description of the Invention (() The present invention relates to a type of semiconductor process device, and particularly to an etching machine. The etching reaction chamber that can be vented (chamberh) In the semiconductor process, the accuracy of the wafer during transfer has a considerable influence on the progress of the process. When the transfer position is shifted, it is necessary to be highly accurate As far as the semiconductor process is concerned, it is easy to reduce the uniformity of the process. Especially in the etching process, the offset of the transmission directly affects the effect of uranium etching. When the etching machine is performing preventive maintenance (PM), The quality of the transmission correction is directly related to the deviation of the transmission during the normal process. Therefore, the quality of the transmission correction will directly affect the etching result during the subsequent etching process. Figure 1 is Part of a conventional etching machine configuration diagram is shown. An etching machine using this configuration method is, for example, the S5DP type etching machine of the Japanese company tel. Please refer to In Fig. 1, the etching machine 100 includes at least a gas supply system 110, an etching reaction chamber 120, and an extraction system 130. The etching machine 1 includes other related devices in addition to the above-mentioned devices, and is not listed here. The etching reaction chamber 120 is a closed space composed of the upper reaction chamber and the lower reaction chamber, that is, the upper and lower reaction chambers 122 and 124 are connected to each other. The gas supply system 11 is supplied through the pipeline lu The top of the gas is reversed: a valve 114 is arranged on the pipeline 112, by which: the gas making system, the pumping system Π0 is connected to the lower reaction chamber 124 via the pipeline η2, and the gas in the reaction chamber is extracted. (Vent ^ J \ Gas This paper is wiped from the applicable Chinese country ¥ TcNS) A Sugiyama (Please read the precautions on the back before filling this page) Order _ Printed by the Intellectual Property Bureau Staff Consumer Cooperatives of the Ministry of Economy 4842twf.doc / 008 A7 B7 V. Description of the invention (π) Enter the reaction chamber 120 through the pipeline 112, and then detach it from the reaction chamber 120 through the pipeline 132. However, in order to check the accuracy of the transmission position during the transmission calibration, the reaction chamber must be removed. 12〇 open (The upper reaction chamber 122 will be opened soon), as shown in Figure 2. However, as a result, ventilation cannot be performed, so that the transmission calibration must be performed in the atmospheric environment, that is, it cannot be the same as the vacuum environment during the process. And, As shown in FIG. 3, when the transfer correction is performed in the atmosphere, an electrostatic adsorption force is generated between the wafer 150 and the electrostatic chuck 160 supporting the wafer 150 in the reaction chamber 120. When the push pin is pushed -pin) 162 When the wafer 150 is lifted up, the wafer 150 is shaken due to the attraction force between the wafer 150 and the electrostatic disk 160, and the shift during the transfer is caused, so that the correct transfer correction position cannot be obtained. One of the conventional methods to solve the electrostatic adsorption force is to place a small piece of paper between the wafer 150 and the electrostatic disk 160 to isolate the adsorption force between the two to reduce the phenomenon of vibration and shaking when the wafer 11 rises. Improved transmission skew. However, it is still impossible to perform evacuation and ventilation to simulate the actual production conditions, so that the effect of transmission correction cannot be effectively improved. Therefore, how to evacuate and ventilate during the transfer calibration to simulate the actual production conditions, eliminate the phenomenon of vibration and shaking when the wafer is raised, so that the transfer offset can be improved to ensure a good calibration position. Therefore, the present invention provides an etching reaction chamber, which can be calibrated for conveyance under vacuum and ventilated, which is similar to the actual production situation, eliminates the phenomenon of vibration and shaking when the wafer is raised, and ensures a good calibration position to obtain the best effect. The present invention provides a uranium-etched reaction chamber, which includes at least: an upper reaction chamber (#read the precautions on the back before filling this page) Order-
A 經濟部智慧財產局員工消費合作社印製 1 2 本紙張尺度適.用中國國家標準（CNS ) A4規格{ 210X297公釐） 45906 A7 4S42twf.doc/008 B7 五、發明説明（）） (讀先聞讀背面之注意事項再填寫本頁) 及一下反應室，合成一密閉空間；一第一管路，連接上反 應室至一供氣系統，此供氣系統提供一氣體經由第一管路 至上反應室；一第二管路，連接下反應室至供氣系統，供 氣系統提供氣體經由第二管路至下反應室，在第二管路中 .更包括配置一限流閥，用以控制通入下反應室之氣體流 量；一切換開關，如三向閥，配接於第一管路、第二管路 與供氣系統之間，切換供氣系統至第一管路與第二管路的 其中之一；一第三管路，連接於下反應室至一抽氣系統， 抽氣系統經由第三管路抽出下反應室中的氣體；以及一活 動式透明蓋板，於傳送校正時，蓋於下反應室上，使活動 式透明蓋板與下反應室形成一密閉空間。 經濟部智慧財產局員工消費合作社印製 本發明亦提供一種改進傳送校正的方法，適用於一蝕 刻反應室，蝕刻反應室至少包括一上反應室及一下反應 室，其中下反應室連接於一供氣系統及一抽氣系統之間， 此方法包括於下反應室蓋上一透明蓋板，如透明壓克力蓋 板，使下反應室與透明蓋板形成一密閉空間。接著進行一 通氣步驟，使供氣系統通入一氣體至下反應室，且抽氣系 統抽出下反應室內之氣體，藉以進行通氣及抽真空，使下 反應室內之壓力相同於製程進行時之壓力。然後進行一傳 送校正步驟。 以本發明提供之蝕刻反應室進行傳送校正，能在傳送 校正時進行抽真空及通氣，模擬實際生產狀況，排除晶片 升起時振動搖晃之現象，使傳送偏移度可以得到改善，以 確保校正位置的良好。 5 本紙張尺度適用中國國家榇準（CMS ) A4規格（210X297公釐） 4S42twf.doc/008 Λ 59 〇6 贫 A7 B7 五、發明説明（e ) (請先閱讀背面之注意事項再填寫本頁) 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1圖是繪示習知一種蝕刻機台之配置示意圖； 第2圖是繪示在第1圖之結構中，進行傳送校正時之 配置示意圖； 第3圖是繪示在第1圖之結構中，進行傳送校正時， 頂針將頂起晶片時之剖面示意圖； 第4圖是繪示依照本發明一較佳實施例之蝕刻機台的 配置示意圖；以及 第5圖是繪示依照本發明一較佳實施例之蝕刻機台， 在進行傳送校正時之配置示意圖。 圖式之標記說明： 經濟部智慧財產局員工消費合作社印製 100 :蝕刻機台 π 〇 :供氣系統 112 :管路 114 :閥門 120 :蝕刻反應室 122 :上反應室 124 :下反應室 130 :抽氣系統 132 :管路 150 :晶片 本紙張尺度適.用中國國家標準（CNS ) A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 45906^ A7 4842twf.doc/008 B7 五、發明説明（Γ ) 160 :靜電盤 162 :頂針 200 :蝕刻機台 210 :供氣系統 212 :管路 214 :閥門 230 :抽氣系統 300 :蝕刻反應室 3〇1 :切換開關 302 :管路 304 :管路 306 :氣動閥 308 :限流閥 310 :透明蓋板 322 :上反應室 324 :下反應室 332 :管路 較佳實施例 依照本發明提供之蝕刻機台，至少包括供氣系統、鈾 刻反應室、以及抽氣系統，除了上述之裝置外，尙包括其 他相關之裝置，可參考日本T.E.L公司第85DP型之蝕刻 機台，藉以更加了解本發明，而不在此——列舉。然而， 此僅以作爲參考，並非用以限定本發明，只要是符合本發 明之精神，皆適用於本發明之範圍。 7 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁)A Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 2 This paper is of a suitable size. It uses the Chinese National Standard (CNS) A4 specification {210X297 mm) 45906 A7 4S42twf.doc / 008 B7 V. Description of the invention () Read the notes on the back of the page and fill in this page) and the reaction chamber to form a closed space; a first pipeline connected to the reaction chamber to a gas supply system, which provides a gas through the first pipeline to the top Reaction chamber; a second pipeline, which connects the lower reaction chamber to the gas supply system, and the gas supply system provides gas through the second pipeline to the lower reaction chamber, in the second pipeline. It further includes a restriction valve for Control the gas flow into the lower reaction chamber; a switch, such as a three-way valve, is connected between the first pipeline, the second pipeline and the gas supply system, and switches the gas supply system to the first pipeline and the second One of the pipelines; a third pipeline connected to the lower reaction chamber to an extraction system, the extraction system extracts the gas in the lower reaction chamber through the third pipeline; and a movable transparent cover plate for conveying During calibration, cover the lower reaction chamber to make it move A transparent cover plate is formed with a reaction chamber sealed space. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics The present invention also provides a method for improving transmission calibration, which is applicable to an etching reaction chamber. The etching reaction chamber includes at least an upper reaction chamber and a lower reaction chamber, wherein the lower reaction chamber is connected to a supply chamber. Between the gas system and an extraction system, the method includes covering a lower reaction chamber with a transparent cover, such as a transparent acrylic cover, so that the lower reaction chamber and the transparent cover form a closed space. Next, a ventilation step is performed, so that the gas supply system passes a gas to the lower reaction chamber, and the gas extraction system extracts the gas from the lower reaction chamber, so as to ventilate and evacuate, so that the pressure in the lower reaction chamber is the same as the pressure during the process. . Then perform a transfer calibration step. Using the etching reaction chamber provided by the present invention to carry out the transfer correction, vacuuming and aeration can be performed during the transfer calibration to simulate the actual production condition, eliminating the phenomenon of vibration and shaking when the wafer is raised, so that the transfer offset can be improved to ensure the calibration. The location is good. 5 This paper size applies to China National Standard (CMS) A4 specification (210X297 mm) 4S42twf.doc / 008 Λ 59 〇6 Poor A7 B7 V. Description of invention (e) (Please read the precautions on the back before filling this page ) In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings for detailed description as follows: Brief description of the drawings: Section 1 The figure is a schematic diagram showing the configuration of a conventional etching machine; the second diagram is the schematic diagram of the configuration shown in the first diagram when the transmission is corrected; the third diagram is the structure shown in the first diagram. Figure 4 is a schematic cross-sectional view showing the configuration of an etching machine according to a preferred embodiment of the present invention; and Figure 5 is a diagram showing a preferred embodiment according to the present invention. The layout of the etching machine of the embodiment when carrying out transmission calibration. Description of the symbols in the drawing: Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 100: Etching machine π 〇: Gas supply system 112: Pipeline 114: Valve 120: Etching reaction chamber 122: Upper reaction chamber 124: Lower reaction chamber 130 : Extraction system 132: Pipe 150: The size of the paper is suitable for the wafer. It is printed with Chinese National Standard (CNS) A4 (210 X 297 mm) 45906 ^ A7 4842twf.doc / 008 B7 V. Description of the invention (Γ) 160: Electrostatic disk 162: Thimble 200: Etching machine 210: Gas supply system 212: Pipe 214: Valve 230: Extraction system 300: Etching reaction chamber 301: Switching switch 302: Pipeline 304: Pipeline 306: Pneumatic valve 308: Restriction valve 310: Transparent cover plate 322: Upper reaction chamber 324: Lower reaction chamber 332: Pipeline preferred embodiment An etching machine provided according to the present invention includes at least The gas system, uranium engraving reaction chamber, and pumping system, in addition to the above-mentioned devices, include other related devices. You can refer to the 85DP type etching machine of the Japanese TEL company to better understand the present invention, and not here-- List. However, this is only for reference and is not intended to limit the present invention, as long as it conforms to the spirit of the present invention, it is applicable to the scope of the present invention. 7 This paper size applies Chinese National Standard (CMS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)
#S9〇e^ A7 4842tWf.dQ〇/008_gy_ 五、發明説明（6 ) (請先閱讀背面之注意事項再填寫本頁) 請參照第4圖，蝕刻機台200至少包括供氣系統210、 蝕刻反應室300、以及抽氣系統230。其中蝕刻反應室300 連接於供氣系統210與抽氣系統230之間。接著說明其構 件及連接關係。 蝕刻反應室300包括上反應室322與下反應室324， . 以及管路302、304與332。上反應室322與下反應室324 共同組成一個密閉空間，也就是說，下反應室324相當於 下蓋，而上反應室322相當於上蓋，兩者可彼此通連。而 管路302、304與332分別連接於上反應室322與下反應 室 324。 上反應室322經由管路302連接至切換開關301，且 下反應室324經由管路304連接至切換開關301，而切換 開關301再經由管路212連接至供氣系統210。切換開關 301，一般比如是三向閥，用以切換管路212是連接至管 路302或是連接至管路304，即切換至管路3G2與304的 其中之一。 經濟部智慧財產局員工消費合作社印製 供氣系統210係用以提供氣體，經由管路212，經過 切換開關301的切換，通過管路302再輸入至上反應室 322，或是通過管路304再輸入至下反應室324。在供氣系 統210中通常設置有流量控制器(MFC)，藉以控制供氣系 統210提供之氣體的流量。在管路212中亦可設置閥門 214，控制供氣系統210中氣體的輸出。 在管路304中設置限流閥308，限流閥308之管徑約 爲0.1-0.5英吋（inch)左右，且約爲0.31英吋左右較佳，氣 8 本紙張尺度適中國Ϊ家標準（CNS > A4規格（210X297公釐] A7 B7 4842twf,doc/008 五、發明説明（1) (請先閱讀背面之注$項再填窝本頁) 體流經限流閥308時，限流閥308限制流通氣體之流量’ 即通過限流閥308之氣體流量爲定値。也就是說’使通入 下反應室324中之氣體流量爲定値。另外’可選擇地在切 換開關301與限流閥308之間設置氣動閥306 ’氣動閥306 比如爲NC(normal closed)氣動閥’ NC氣動閥正吊爲關閉’ 當供給一定壓力之氣體時，氣動閥306才打開，使供氣系 統210提供之氣體通過氣動閥306至下反應室324 ’藉以 增加製程的安全性。 下反應室324經由管路332連接至抽氣系統230 °亦 即蝕刻反應室300(上反應室322與下反應室324)中的氣 體，經過管路332而被抽出至抽氣系統23〇中。也就是說’ 在進行通氣(vent)時，氣體經由管路212’以及經由管路3〇2 進入上反應室322，或經由管路304進入下反應室324 ’ 再經由管路332從蝕刻反應室3〇〇中抽離。# S9〇e ^ A7 4842tWf.dQ〇 / 008_gy_ 5. Description of the invention (6) (Please read the precautions on the back before filling this page) Please refer to Figure 4. The etching machine 200 includes at least the gas supply system 210 and the etching The reaction chamber 300 and an extraction system 230. The etching reaction chamber 300 is connected between the gas supply system 210 and the air extraction system 230. Next, its components and connection relationships will be described. The etching reaction chamber 300 includes an upper reaction chamber 322 and a lower reaction chamber 324, and pipes 302, 304, and 332. The upper reaction chamber 322 and the lower reaction chamber 324 together form a closed space, that is, the lower reaction chamber 324 corresponds to a lower cover, and the upper reaction chamber 322 corresponds to an upper cover, and the two can communicate with each other. The pipes 302, 304, and 332 are connected to the upper reaction chamber 322 and the lower reaction chamber 324, respectively. The upper reaction chamber 322 is connected to the switch 301 via a pipe 302, and the lower reaction chamber 324 is connected to the switch 301 via a pipe 304, and the switch 301 is connected to the gas supply system 210 via a pipe 212. The switch 301 is generally a three-way valve, for example, to switch the pipeline 212 to the pipeline 302 or the pipeline 304, that is, to switch to one of the pipelines 3G2 and 304. The printed gas supply system 210 of the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is used to provide gas, which is then input to the upper reaction chamber 322 via line 302 and to the upper reaction chamber 322 via line 302, or via line 304. Input to the lower reaction chamber 324. The gas supply system 210 is generally provided with a flow controller (MFC) to control the flow rate of the gas provided by the gas supply system 210. A valve 214 may also be provided in the pipeline 212 to control the gas output in the gas supply system 210. A restriction valve 308 is provided in the pipeline 304. The diameter of the restriction valve 308 is about 0.1-0.5 inches (inch), and about 0.31 inches is preferred. The size of this paper is in line with Chinese standards. (CNS > A4 specifications (210X297 mm) A7 B7 4842twf, doc / 008 V. Description of the invention (1) (Please read the note on the back before filling in this page) When the body flow passes the flow restriction valve 308, the limit The flow valve 308 restricts the flow of gas through flow ', that is, the flow rate of the gas passing through the flow control valve 308 is constant. That is,' make the flow rate of the gas flowing into the lower reaction chamber 324 constant. In addition, 'optionally, the switch 301 and the limit A pneumatic valve 306 is installed between the flow valves 308. The pneumatic valve 306 is an NC (normal closed) pneumatic valve. The NC pneumatic valve is suspended when it is closed. The pneumatic valve 306 opens only when a certain pressure of gas is supplied, so that the air supply system 210 The supplied gas passes the pneumatic valve 306 to the lower reaction chamber 324 'to increase the safety of the process. The lower reaction chamber 324 is connected to the extraction system 230 through the pipe 332, which is the etching reaction chamber 300 (the upper reaction chamber 322 and the lower reaction chamber). The gas in 324) is extracted to the exhaust system 23 through the line 332 That is, 'when venting, the gas enters the upper reaction chamber 322 through the pipeline 212' and the pipeline 302, or enters the lower reaction chamber 324 through the pipeline 304 'and then from the pipeline 332 The etching reaction chamber was evacuated.
A 經濟部智慧財產局員工消費合作社印製 仍參照第4圖，當製程進行時’供氣系統210提供氣 體，如反應進行之蝕刻氣體，經過管路212 ’此時切換開 關301連通管路212與管路302 ’氣體再經過管路302進 入上反應室322，亦即進入鈾刻反應室300 °然後鈾刻反 應室300中的氣體，經由管路332抽出至抽氣系統200中。 請參照第5圖，當進行傳送校正時，首先打開蝕刻反 應室300,即掀開上反應室322。接著以活動式透明蓋板310 蓋於下反應室324上，使透明蓋板310與下反應室324形 成一密閉空間，因此可進行抽真空並進行通氣。活動式透 明蓋板310比如爲透明壓克力蓋板’其可配置於触刻反應 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） A7 B7 4成2§vH?8 嗲 五、發明説明（3 ) 室300上，或是爲個別獨立之構件，當進行傳送校正時再 蓋於下反應室324上。另外，可在透明蓋板310與下反應 室324之間設置墊圈（未顯示），藉以增加兩者之間的密合。 接著進行一通氣步驟，供氣系統210提供一氣體，比 如是氮氣，經過管路212，通過閥門214，此時切換開關301 連通管路212與管路304，使氣體通入管路3〇4中。若管 路中設有氣動閥306，則開啓氣動閥306，使氣體通過氣 動閥306，再經過限流閥308，進入下反應室324中。由 於限流閥3〇8限制通過氣體流量，因此進入下反應室324 中之氣體流量爲定値。然後’下反應室324內之氣體’經 由管路332抽離至抽氣系統230。 由於有活動式透明蓋板310蓋於下反應室324上’使 得下反應室324形成一密閉空間’並且限流閥308限制流 入下反應室324中之氣體流量，因此當抽氣速率大於進氣 速率時，下反應室324即進行抽真空，可以使得下反應室 324之壓力調整至製程進行時之壓力’而且供氣系統210 同時進行通氣，所以可以模擬製程進行之情況。 然後進行傳統之傳送校正步驟。使用機械手臂將晶片 傳送至蝕刻反應室3〇〇之下反應室324中’透過活動式透 明蓋板310觀看傳送的位置是否正確’並且進行校正。此 時由於下反應室324已經進行抽真空並且通氣’而與實際 生產狀況相似，可模擬製程進行時的情況。 因爲在真空下作傳送校正不會有習知發生靜電吸附而 導致晶片振動搖晃之情形發生’使得傳送偏移度得到改 10 本紙張尺度適用中國國家榇準（CNS ) A4说格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) 訂 - 經濟部智慧財產局員工消費合作社印製 45906^ 4842twf.doc/008 A7 B7 五、發明説明（γ ) 善，並且進行通氣，模擬製程進行時情況，因此可得到良 好的校正位置，而且可以得到最佳傳送效果。 由上述本發明較佳實施例可知，本發明可在傳送校正 時進行抽真空及通氣，模擬實際生產狀況，故可排除晶片 .升起時振動搖晃之現象，使傳送偏移度可以得到改善，以 -確保校正位置良好，可得到最佳傳送效果。 雖然本發明已以一較佳實施例揭露如上，然其並非用 ' 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (諳先閱讀背面之注意事項异填寫本頁)A Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs still refers to Figure 4. When the process is progressing, 'the gas supply system 210 provides gas, such as the etching gas during the reaction, through the pipeline 212' At this time, the switch 301 communicates with the pipeline 212 With the pipeline 302 ', the gas passes through the pipeline 302 and enters the upper reaction chamber 322, that is, enters the uranium-etched reaction chamber 300 °, and then the gas in the uranium-etched reaction chamber 300 is extracted into the extraction system 200 through the pipeline 332. Referring to FIG. 5, when performing the transfer correction, the etching reaction chamber 300 is first opened, that is, the upper reaction chamber 322 is opened. Then, a movable transparent cover plate 310 is covered on the lower reaction chamber 324, so that the transparent cover plate 310 and the lower reaction chamber 324 form a closed space, so that the vacuum can be evacuated and ventilated. The movable transparent cover plate 310 is, for example, a transparent acrylic cover plate, which can be configured for touch-response. The paper size is applicable to China National Standard (CNS) A4 specifications (210X 297 mm) A7 B7 40% 2§vH? 8 嗲5. Description of the invention (3) The chamber 300, or an individual independent component, is covered on the lower reaction chamber 324 when transmission calibration is performed. In addition, a gasket (not shown) may be provided between the transparent cover plate 310 and the lower reaction chamber 324 to increase the adhesion between the two. Next, a ventilation step is performed, and the gas supply system 210 provides a gas, such as nitrogen, through the pipeline 212 and the valve 214. At this time, the switch 301 connects the pipeline 212 and the pipeline 304 to allow the gas to flow into the pipeline 304. . If a pneumatic valve 306 is provided in the pipeline, the pneumatic valve 306 is opened to allow the gas to pass through the pneumatic valve 306 and then pass through the restriction valve 308 to enter the lower reaction chamber 324. Since the restricting valve 3 0 restricts the passing gas flow rate, the gas flow rate entering the lower reaction chamber 324 is constant. Then, the 'gas in the lower reaction chamber 324' is evacuated to the evacuation system 230 via the pipe 332. Because a movable transparent cover plate 310 covers the lower reaction chamber 324 'makes the lower reaction chamber 324 form a closed space' and the restrictor valve 308 restricts the gas flow into the lower reaction chamber 324, so when the extraction rate is greater than the intake air At the rate, the lower reaction chamber 324 is evacuated, so that the pressure of the lower reaction chamber 324 can be adjusted to the pressure during the process, and the gas supply system 210 is simultaneously vented, so the process of the process can be simulated. Then perform the conventional transmission correction steps. A robotic arm is used to transfer the wafer to the reaction chamber 324 below the etching reaction chamber 300, and 'correct whether the position of the transmission is viewed through the movable transparent cover plate 310' is adjusted. At this time, since the lower reaction chamber 324 has been evacuated and aerated, it is similar to the actual production situation, and it can simulate the situation during the process. Because the transfer correction under vacuum does not have the conventional phenomenon of electrostatic adsorption that causes the wafer to shake and shake, 'the transfer offset is changed. 10 This paper size is applicable to China National Standard (CNS) A4 grid (210X297 mm) ) (Please read the precautions on the back before filling out this page) Order-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 45906 ^ 4842twf.doc / 008 A7 B7 V. Invention Description (γ) Good, and ventilation, simulation process As the situation progresses, a good correction position can be obtained, and the best transfer effect can be obtained. It can be known from the above-mentioned preferred embodiments of the present invention that the present invention can perform evacuation and ventilation during transfer calibration to simulate actual production conditions, so that the phenomenon of wafer shaking and vibration during lifting can be eliminated, so that the transfer deviation can be improved. In order to ensure that the calibration position is good, the best transmission results can be obtained. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Anyone skilled in the art can make various modifications and decorations without departing from the spirit and scope of the present invention. The protection scope of the present invention shall be determined by the scope of the attached patent application. (Please read the notes on the back first and fill in this page)
iTiT
A 經濟部智慧財產局員工消費合作社印製 本紙張尺度適.用中國國家標準（CNS ) A4规格（210X297公釐）A Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is suitable in size. It uses the Chinese National Standard (CNS) A4 specification (210X297 mm)