TW448683B - Multiple storage node active pixel sensors - Google Patents

Abstract

An active pixel sensor disposed on a semiconductor substrate includes a photosensor, a reset transistor, a plurality of storage nodes and outputting means. The photosensor has a first terminal and a second terminal, wherein the first terminal is coupled to a first reference potential. The reset transistor has a first terminal coupled to the second terminal of said photosensor, a second terminal coupled to a reset potential, and a third terminal coupled to a reset line. The plurality of storage nodes are coupled to said second terminal of said photosensor, and the means for outputting a value from any of said plurality of storage nodes is coupled to the storage nodes.

Description

448683 V. Description of the invention (1) Background of the invention 1. Scope of the invention The present invention relates to an active pixel sensor and an active pixel sensor array. More specifically, the present invention relates to active pixel sensors and applications with a large number of storage nodes, such as still cameras, which utilize an active pixel sensor array with a large number of storage nodes. 2. Technical background In a still camera with a randomly addressable CMOS active pixel sensor, the question of how to achieve a short exposure interval based on a long readout interval exists. —A typical active pixel area array image sensor in Hurwitz et al. “A 00 for Consumer Still Cameras] (Pixel Color & CM Sense and J Device— 'SPIE No. 3 01 9 Volume, page 1 1 5 -4 24 is proposed, and it contains multiple pixel sensors with rows and columns. Most of them are used for this type of sensor array exposure: the general method is to scroll through the columns to each The combination duration of the columns is the same, but may be shorter than the overall readout interval. This method of exposure control is called electronic shutter.-There are two problems with this type of electronic shutter. First, because each column scans Different time intervals ', so there will be motion artifacts (the shape of the animal body will be distorted). 2)' This solution requires-very high rotation tool = j analogue digital converter (ADC) tool For example, if the array is ^ ΐ — million pixels and the readout duration is 1/100 second (approximately hand pick = camera's maximum acceptable level), the required conversion rate is ⑽ shape shirt. Because it has 4 techniques for commercial ADCs that require precision (10 bits) 2G is one million samples / second, so it is necessary to use a total of five to catch the

Page 5 44β 683_ V. Description of the invention (2) Device to allow 1/100 second exposure. Because of the need to overcome some of the problems associated with electronic shutters, different solutions have been proposed in prior art. One of the solutions is found in the serial number 0 8/9 6 9, 3 83, entitled η Internal pixel frame storage elements, arrays and electronic shutters suitable for electronic camera applications ", 1997 1 November 1 3 Proposed and clearly incorporated herein by reference. Regardless of the electronic shutter improvements described in the above plan, it will take a lot of time to read an image. As a result of these continuous problems, the rapid continuous acquisition of most images from the imager is Difficult * because the time period is too short. When comparing the output of a digital camera with the image quality produced by a full-month camera, another problem that is easily recognized by those skilled in this art is that dynamic permutation compression must be improved. At present, the limitation of the dynamic arrangement ability causes the bright part to be burned, and the critical exposure value in a digital imager is inferior to the quality of the negative. We all know that to improve the quality of the image in the phase >!, A compression scheme should Increase the effective dynamic arrangement in the imager by at least ten times. This is absolutely true for the bright parts of the image. Because it is now used in technology A dynamic permutation compression scheme using non-linear charging pixel voltage conversion, a satisfactory dynamic permutation compression has not yet been completed. A camera with the ability to capture most images quickly and continuously will help ensure multiple benefits, is Not provided by previous techniques. First, most images with different focal length settings can be used to reconstruct a sharp image. Second, most images with different exposure settings or sensitivity can be used to reconstruct a wide dynamic arrangement. Third, most images can be acquired at known time intervals between them, the purpose of which is to measure

448683 V. Description of the invention (3) The speed of the captured object is used for the captured image since the temporary bracket Before and immediately after the light exposure image and most images can be taken. One of the inventions is an image-based initiative. Another of the inventions is to extract multiple inventions. According to the storage node, the camera is cleverly captured at the sending node. This may be possible. This node, the main description of the image, explains the present invention, the active image application is used to quickly operate the first one of the objects in the image to store the second plurality of connections in the application. Fourth, connect at a block speed, and the images contained in the M shutter bucket η ": can be pressed by the J switch " button 柢 π +. Fifth, the image can be taken from the station recently, in order to trace the exposure of two m electronic flashes in natural light; push the image of “You Line”. Flash is captured by a separate color filter. The sixth color image is captured to provide a sensor with multiple memory pixels. The storage node is used for capturing multiple targets to provide one and the right pixel sensor array; there are multiple storage nodes for digging the storage pixel sensor array in the storage pixel sensor array. This F train Can be used to capture multiple images continuously at static speed. This captured image can be used to construct a new image or used for other purposes, such as measuring the speed of an object. In an embodiment, the active pixel sensor includes a plurality of column selection lines for storing and selecting a plurality of storage nodes, and a plurality of output lines for reading out images from the plurality of storage nodes. In one embodiment, the image is stored in multiple storage nodes. In the embodiment, the active pixel sensor includes multiple column selection lines that store multiple storage nodes, and according to this, storage 448683 can be stored. V. Description of the Invention (4) Storage The order of image reading in multiple storage nodes— ~ The column decoding circuit can be connected to the column selection line ^ Row output line ° — Frost / Stored image. Connect columns and select lines to select the storage node output in the third and fourth alternative embodiments of the present invention, one of which is provided by an active pixel sensor—current selection of multiple storage nodes. Image selection No. 2 and: : Node, multiple single-column selection lines for selecting images. The image selection G row is used on the line out. The third embodiment is used to exclude multiple column selections. Combine the column selection in the fifth embodiment of the present invention. Output: The sensor contains a plurality of nodes that are stored in the sixth embodiment of the present invention. The node is connected to the receiver. The sensor includes two differential amplifiers that are stored in rotation. The circuit / system is provided to provide differential The current is between the images on the two storage nodes: it is used to sense the two storages for different purposes. '&Quot;. The differential readout circuit can be briefly explained using the drawings. Figure 1 is suitable for the device according to the present invention. Block diagram ^ Image diagram of the embodiment of moving pixel sensing Is. 概要 A summary of an N-channel MOS application with a single storage node. Figure 3 疋 A timing diagram illustrating the operation of the active pixel sensor described in Figure 2. Figure 4 is A diagram of a light sensor suitable for the present invention. Figures 5, 6, 7 '8, 9, and 10 are active pixel sensors with multiple storage nodes according to the first to sixth embodiments of the present invention. Overview diagram.

448683 V. Description of the invention (5) Figures Π A and 1 1 B are alternative timing diagrams for the operation of the active pixel sensor according to the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Those skilled in the art understand that the following description of the present invention applies only to the description and is not limited in any way. Other embodiments of the present invention will easily facilitate this skilled person on my own. FIG. 1 is a block diagram of an active pixel imager suitable for the present invention. The active pixel sensors in the imager 10 are arranged in a pixel sensor array 12 in rows and columns. To analyze the analog pixel information from the pixel sensor array 2 for processing using an analog-to-digital converter (ADC) 14, a column of decoder circuits 16, a row of sampling circuits 18, and a counter 20 are used. The column decoder 14 corresponds to a column of enable signals 2 2 and the self-pixel sensor array 12 selects a column and selects a signal from the counter 20. The line sampling circuit 18 is also driven by the counter 20 and includes a multiplexer that connects the described sampling line to an ADC corresponding to the signal from the counter 20. In a typical application, the higher-order bits from the counter 20 are used to drive the column decoder circuit 4 and the lower-order bits are used to drive the row sampling circuit 20 to select the column decoding circuit 4 One row previously allows all pixel information from the rows in the pixel sensor array 12 to be taken out. Column decoders, line sampling circuits and counters suitable for imagers 10 are well known to those skilled in the art 'and will not be described in detail here to avoid overcompensating the invention and therefore mixing the invention. Referring now to FIG. 2, there is shown a known active pixel sensor with a single embedded storage element. The active pixel sensor 3 is an N-channel MOS transistor.

448683

Those who are proficient in this art will understand that the active pixel sensor 3 can be implemented as a p-channel MOS transistor or a combination of a P-channel and an N-channel MOS transistor. In the active pixel sensor 30, the photodiode 32 has a grounded positive electrode and a f to N channel m0s reset transistor 34 source negative electrode ^ n channel M0s reset battery Ba 34 The gate is connected to Vref and the gate of the reset transistor 34 is connected to the common RESET line indicated by the numeral 24 in FIG. 1. The reset line is preferably driven at least one voltage above a critical point above Vre f to set the anode of the photodiode 32 to vref. V. Description of the invention (6) The negative electrode of the photodiode 32 is also connected to the first source / _drain of the N-channel MOS conversion transistor 36. The second source / drain connection of the N-channel Mos switching transistor 36 is connected to the first terminal of the storage element 38 and is also connected to the M-terminal of the N-channel MOS readout transistor 40. The second terminal connection of the storage element 38 shows a ground reference potential. The gate connection of the channel MOS conversion transistor 36 is the common XFR + line marked with the number 26 in the figure》 N channel MOS conversion transistor 36 the second source, the drain to the storage = the first terminal of the component 38 and the N channel M0s. The readout transistor 40 gate connection is formed-storage node 42 channel M0S read transistor 40 drain terminal is connected to Vcc, and the source of NMOS readout transistor 40 is connected to the N channel M0s column to select the transistor. crystal

Two 44 = > and extreme. One of the gates of the n-channel m0s column selection transistor 44 is Kο SELECT β '. One of them is represented by the number 28 in FIG. i, and the source of the n-channel m0s column selection transistor 44 is connected to one row. Output line. We should understand that the storage node 42 is related to the 1 ^ channel Mos conversion transistor 36 using the anode of the photodiode 32. When an integration period as described below Collect, N channel M〇S # 出 电 晶 4 〇 Sensing the charge accumulated in the storage node, and stored

448683 V. Description of the invention (7) The element 38 stores electric charge. Furthermore, as in the same period of application number 0 9/0 9 9,1 1 6, the 'Memorandum of Attorney No. F0v' filed by Richard B. Merrill and Richard F. Lyon on June 17, 1998 _〇1 No. 3 and assigned to the same designator of the present invention is described in "ACTIVE PIXEL SENSOR WITH BOOTSTRAP AMPLIFICATION" ", and is described in detail herein and Reference 'storage element 38 can be omitted and the charge stored on the gate of the n-channel μs readout transistor 40 or other devices capable of charge storage can be used. -To better understand the operation of the active pixel sensor 30, Figure 3 illustrates the timing diagrams of the RESET, XFR and ROW SELECT signals described in Figure 2. The active pixel sensor 30 is reset by simultaneously turning on the N-channel M0s to reset the transistor 34 and the sub-channel M0S switching transistor 36 as shown. The RESET and XFR signals are at 50 and 52 at the high level. Then it closes at the falling edge 54 of the RESET 50 to the square; the accumulation of the photocurrent at the end of the photo-polar body 32 starts. The photocurrent integration period is indicated by reference numeral 56. When the N-channel MOS conversion transistor 36 is turned on, the capacitance of the storage unit 38 is increased to the capacitance of the photodiode 32 during the accumulation period, so the range of the charge capacity 1 and the active pixel sensor 30 is increased. Since the gate oxide capacitor forming the storage element 38 is easier to control than the junction capacitance of the photodiode 32, this also reduces the variation due to the capacitance variation in the pixel output. When the accumulation is completed (controlled by external exposure), the N-channel mS switching transistor 36 is closed at the XFR falling edge 58 to isolate the voltage level of the corresponding storage element # < ^ 卜 g 锖 弁 charge. Soon thereafter, the photodiode

448683 V. Description of the invention (8) Turn on the N-channel MOS reset transistor 34 again to reset to the reference voltage, as indicated by RESET rising edge 60. This action will prevent the photodiode 32 from continuing to accumulate during readout and may overflow excessive charge into the substrate, which may affect the integrity of the signal on the storage element 38. After the N-channel MOS switching transistor 36 is turned off, the readout process is started. When an r 0w SELEC T signal pulse is applied to an active pixel sensor '30 tN channel m 0S column selection transistor 44 gate as shown in FIG. 3, each active pixel sensor in a column Was read. In the operation of the active pixel sensor 3 0, a voltage related to the voltage found on the storage node 42 is sensed by the n-channel M0s. The readout transistor 40 senses and when the N-channel MOS column selection transistor 44 is turned on Is added to the line output line. The X F R signal stays low until all columns have been read or another cycle is initiated. A photodiode suitable for the present invention was invented in the same period of the United States Application June 09 / 065,939, Richard B. Merrill filed on April 24, 1998, has an agent memo number and is assigned to this The title of the same designator of the invention is " COLOR SEPARATION IN AN ACTIVE pixel CELL IMAGING ARRAY USING A TRIPLE-WELL STRUCTURE ", and is clearly incorporated herein by reference. The light-polar body invented here has a triple-well structure that provides three overlapping (0 v e r 1 a p p i n g) light detectors in the photodiode. In the embodiment of the active pixel sensor of the present invention described below, each of these overlapping photodetectors can be connected to one of more than ten storage nodes of the active pixel sensor. Another optical sensor 70 suitable for use in the present invention is illustrated in FIG. Light-sensitive

Page 12 448683 V. Description of the invention (9) Test 1 § 70 includes the first and first photodiodes 72 and 74. The first and second photodiodes 72 and 74 are arranged in a circular manner. The first photodiode Η provides a low-sensitivity area compared to the larger high-sensitivity area of the second photodiode 74. Because the first and second photodiodes 72 and 74 have the same geometric center, when the finger # is linear, they will sample the average incident photon flux of the image. One of the advantages of dynamic range compression provided by the photo sensor 70 is that the first and second photodiodes 72 and 74 will sample the photocurrent at the same time interval. Those skilled in the art will easily understand that this feature is very useful, for example, in flash exposures. In the photo sensor 70, each of the first and second photodiodes 72 and 74 will generate a photocurrent to equalize its area. With recent advances in processing technology, the active area ^ openings and photodiodes can be made small enough to provide—very large photomotor ratios', such as for a pixel of 6 microns x 6 microns approximately 50: 1 jl /- ', _ ° At present we notice that each of the photodiodes 72 and 74 can be connected to a plurality of independent storage nodes of Wen Jiang Erming. ^ In the present invention, an active pixel sensor such as the imager illustrated in FIG. 1 can be sentenced, y i Q i ^ contains multiple storage nodes, so each has multiple storage nodes

The node .V seven text plus M ', the rigid array can be used to capture more than a single image. Several embodiments of the storage pixel sensor with multiple storage ribs __np p points are described below.

Jin Nong explained that the embodiment of the storage pixel sensor is implemented as an N-channel MOS battery. Those who are proficient in this art will understand that the storage pixel sense below will be able to be implemented by D, other P-channel MOS transistors or the combination of N-channel and P-channel MOS transistors. See reference to Fig. 5-1, which shows a plurality of storage sections according to the present invention.

Page 13 4 48683 V. Summary of the six embodiments of the active pixel sensor of the invention description point. In the embodiment of each of the pixel sensors 100-1-1 to 0-0 described in FIG. 5_10, the storage pixel sensor 100 includes a grounded positive electrode and a connected N-channel reset transistor 104. The source and the cathode of the photodiode 102. The n-channel MOS reset transistor 104 is connected to a RESET signal and a Vref respectively. Furthermore, each of FIG. 5-9 contains a plurality of storage nodes 1 〇6 ~ 1 to 106_η. The first storage node 106-1 is connected to the first terminal of the storage element ios— !, the first source / drain of the N-channel MOS conversion transistor 1 1-0, and the n-channel. M〇s reads the gate of transistor 1 1 2- 1. The nth storage node 丨 〇6 _n is connected to the first terminal of storage element 108-n ′ N channel M0s conversion transistor 丨 丨 —n The first source // and the gate of the N-channel MOS readout transistor ιΐ2-η. The negative pole of the photodiode 102 is also connected to the N-channel MOS conversion transistor 1 1 〇-1 and 11 on the first Two source / non-polar. The gates of N-channel MOS switching transistors 丨 lo-i and 丨 丨 〇-η are connected to XFR1 and XFRn signals respectively. The storage elements 108-1 and 108-η each have a connection to as shown Ground Fixed potential second terminal. In the active pixel sensor described in FIG. 9 in the embodiment, additional storage nodes 1 0 6-n / i and 1 0 6-(η-j) are described. Demonstrate that multiple storage nodes can form a matrix between ROW SELECT1 to Row SELECT i and row output lines 丨 to ”·. The storage node 106_n /: i is connected to the first terminal of the storage element 108_n / i ', the first source / drain of the N-channel M0S conversion transistor 11〇_η / ι and the N pass-through MOS s sells electricity Gate of crystal 1 1 2-n / i. Storage node 丨 〇6_ (n _)-) 2 is connected to the first terminal of the storage element 108- (nj), the N-channel M0s conversion transistor 1 i0- (nj) is the first source / drain and The N-channel rib 3 reads out the gate of the transistor U2- (nj). The negative pole of the photodiode 102 is also connected to the n channel M0s.

Page 14 448683 V. Description of the invention (11) 1 ~ The second source / drain of the transistor 110-Wi. The gates of the N-channel MOS switching transistors 110-n / i and u〇_ (n —].) Are connected to XFRn / i and XFR (n-j) signals, respectively. The storage elements 108-n / i & 108- (n_ "·) each have a second terminal connected to a fixed potential to ground as shown. In FIG. 10, because a differential readout circuit is provided in the active pixel element 100-6, only two storage nodes 丨 〇 6 _ 1 and 丨 〇 6 _ 2 are described. The first storage node 106-1 is connected to the first terminal of the storage element jos-i, the first source / drain of 1 ^ channel M0S conversion transistor 1 1 〇-1 and the n-channel readout transistor 112-1 Gate ^ storage node 10-6_2 is connected to the first terminal of storage element 108-8_2, the N-channel M0S conversion transistor 丨 the first source / drain of 10-2 and the gate of N-channel M0S readout transistor 112-2 pole. The negative pole of the photodiode 102 is also connected to the second source / drain of the N-channel MOS conversion transistor 1 ι__ι and ι1〇_2. The gates of the N-channel M0S conversion transistors iio-i and ιι_2 are connected to XFR1 and XFRn signals, respectively. The storage elements log-1 and 10-8_2 each have a second terminal connected to a fixed potential to ground as shown. During the operation of the active pixel sensor 110-1 to 1 10-6, the active pixel sensor is reset and the charges are accumulated in a manner similar to that described above in FIG. 2. However, we should understand that the implementation of this operation can be different from that shown in Figure 2 above. During the integration of the images stored on each storage node, XFR1 to XFRn signals can be added to the N-channel M0S conversion transistor 110- The gates of 1 and 110-n are different, different durations and different times. For this application, the XFR1 to XFRn common conversion line will be used instead of the single common XFR line described in FIG. In FIGS. 11A and iiB, the descriptions of the RESET 'XFR1 and XFRn signals used for the active pixel sensor according to the present invention are described.

Page 15 44β 683 V 'Explanation of the invention (12)' 2 Figures But alas, a single public X F R line can still be used. This is a special k-point. For example, when used in an active pixel sensor, the light diode is a ring light diode 70 as described in FIG. 4. In FIG. 11A, when the XFR1 signal is HIGH, the RESE1Mf number makes a transition at the falling edge 1 > 50 to start the accumulation of charge on the storage node 106a. When χρκιk is converted at the falling edge 1 52, the accumulation of charges on the storage node 丨 〇 6 _ i stops. The RESET signal then performs a transition on the rising edge 154 to reset the voltage of the negative pole of the photodiode 102. The XFR1 signal then undergoes a transition on the rising edge 156. When the RESET signal makes a transition at the falling edge ι58, the accumulation of charge on the storage node 106-n starts. #XFRn signal 16 at the falling edge—at the transition, the storage of charge on storage node 1 〇6—η stops β. Figure 11B 'When XFR1 and XFRn signals-HIGH, the RESET signal makes a transition at the falling edge 170 to start The accumulation of charges on storage nodes 10-6-1 and 10-6-2. When the XFR1 signal makes a transition at the falling edge 72, the accumulation of charge on storage node 1 0 6 -1 stops, and the accumulation of charge on storage node 1 06_n continues until the XF R η signal makes a 1 on the falling edge 1 7 4 Conversion. In the embodiment of the active pixel sensor 100 illustrated in FIG. 5, the voltages appearing at the storage nodes 10 6-1 to 106-η are each read out on the separate row output lines using the same column selection signal. Therefore, the terminals of the N-channel MOS readout transistors 112-1 to 112-11 are connected to Vcc, and the sources of each N-channel MOS readout transistor 1 12-1 to Π 2-n are connected to the N-channel MOS column respectively. The drains of the transistors 114_1 to 114-n are selected. The gates of the N-channel MOS column selection transistors 114-1 to 1 14-n are connected to the same SELECT signal, and the sources of the N-channel MOS column selection transistors 11 4-1 to 1 1 4-η are connected to the rows, respectively. Output line

Page 16 448683 V. Description of the invention (13) ------ 116-1 to li6 ~ n. In the active pixel sensor 1 0 0-1 operation, when the image is read out on the first and second lines, the 11 6_1 to 1 1 6-n line circuits are connected respectively. No image is stored on storage nodes 106-1 to 106-η. Furthermore, the 'line circuit' can be used to perform some functions on the surviving wide image at the same time, such as performing a linear combination of the two images. In the embodiment of the active pixel sensor 100_2 described in FIG. 6, the voltages appearing at the healthy nodes 1 0 6- 1 to 1 0 6 -η are read on the same row output line using the sub-ROW SELECT1 to ROW SELECTn signals, respectively. Out. Therefore, the drains of each N-channel M0S readout transistor 112-1 to 112-η are connected to vcc, and the source of each | ^ channel M0S read-out transistor 1 1 2-1 to 1 1 2-n is connected respectively The n-channel Mos column selects the drains of the transistors 1 2 0-1 to 1 2 0-n. The gates of each N-channel m0s column selection transistor 120-1 to 120-11 are connected to 1 and 3 respectively;] 1 £ (: 1 to 1? SELECTn signal 'and N-channel M0S column selection transistor The sources of the crystals 120-1 to 120-n are connected to a single row output line 118. In the operation of the active pixel sensor 1 0 0-2, the image stored on the storage node 丨 〇6 _ J will correspond to HIGH ROW SELECT1 The signal is read out, and the image stored on the storage node 106-η will be read out corresponding to the HIGH ROW SELECTn signal. We know that the imager described in Figure 丨 will also include additional decoding circuits for providing ROtf SELECT1 to ROW SELECTn signal. Active pixel sensor described in FIG. 7 In the embodiment, the voltage at the storage nodes 106-1 to 106-η appears in a single row output line corresponding to the [maGE SELECT1 to IMAGE SELECTn signal. 122 are read out and added to the N channel M 0 S image selection transistors 1 2 4-1 to 1 2 4-η and 1

Page 17 448683 V. Description of the invention (14) ----- ROW SELECT signal. Therefore, on the n gospel vmc, the n-channel M0S readout transistors 112-1 to 112-ri are connected to Vcc, and the N-channel M0s readout transistor 2 ^ to 1 The 12-n source is connected to the N-channel Mos image selection transistor 241 to 124-n, respectively. The gates of the N channel M0s image selection transistors up! To 1301 are connected to the IMAGE SELECn to IMAGE S £ LECTn signals, respectively. N-channel M0S image selection transistor ^ Bu! The source to 13〇_11 is connected to the drain of the {^ channel M0S column selection transistor 126. The N-channel M0s column selection transistor 126 is connected to the R0W SELECT signal, and the N-channel M0S column " transistor 1 2.6 source is connected to a row of output lines 1 2 2. During the operation of the active pixel sensor 100--3, the scene stored on the storage node 丨 〇_ _ i will be read out corresponding to the HIGH ROW SELECT signal and the HIGH IMAGE SELECT1 ^ fs number, and stored in — The image on storage node 1 0 6-n will be read out corresponding to HIGH ROW SELECT signal and HIGH IMAGE SELECTn signal. We should understand that the imager described in Figure 1 will still contain the public IMAGE SELECT1 to IMAGE SELECTn lines. The use of the common IMAGE SELECT1 to IMAGE SELECTn signals in combination with the ROW SELECT signal can omit the need for additional column decoding required by the second embodiment. In the embodiment of the active pixel sensor 100- 4 described in FIG. 8, the voltages appearing at the storage nodes 106-1 to 106-n correspond to a single row of the IMAGE SELECT1 to IMAGE SELECTn signals and an ROff SELECT signal, respectively. The output lines 128 are read out in a current mode. Therefore, the drains of the N-channel M0S readout transistors 112-1 to U2-n are connected together and connected to the source of the N-channel M0S column selection transistor 1-30. N-channel M0S readout transistor 1 1 The sources of 2-1 to 112-η are connected to IMAGE SELECT1 to IMAGE SELECTn, respectively

Page 18 448683 V. Description of the invention (15)

signal. The gate of the N-channel MOS column selection transistor 130 is connected to the RW SELECT signal, and the drain of the N-channel MOS column selection transistor 130 is connected to a row of output lines 128. In the operation of the active pixel sensor 1 0-4, the row output line 丨 2 8 is connected to the n channel M0S column selection transistor 1 3 0 drain. In order to generate the current of the stored image on the line output line 128, the image stored in the storage node — 1 will be selected by the LOW WAGE SELECT1 signal, and the image stored in the storage node 1061 will be selected by the LOW IMAGE SELECTn signal. Line output line 丨 28 current mode output is controlled by IMAGE SELECT1 to IMAGE SELECTn signal ° Line output line 1 2 8 output must be maintained biased to a sufficiently high voltage, its non-selection N channel M0S read transistor 112-1 to 112-η does not begin to conduct backwards. Furthermore, we should understand that the voltage drivers IMAGE-SELECT1 to IMAGE SELECTn k must be able to receive all the currents from the rows of the selected column. In the embodiment of the active pixel sensor described in FIG. 9-5, the voltages appearing at the storage nodes 106-1 to 106-n / i are utilized on the row output lines 132-1 to 132-j, respectively. The R0W SELECT1 signal is read out, and the voltages appearing at the storage nodes 106- (nj) to 106-π are read out respectively on the row output lines using the ROW SELECT i signal. Therefore, the drain of each n-channel M0S readout transistor 1 1 2-1 to 1 1 2-n is connected to Vcc, and the source of the N-channel M0S readout transistor 1 1 2-1 to 1 12 ~ n is respectively The “connection” channel M0S column selects the drains of transistors 134-1 to 134-η. The n-channel M 0S column selects the transistors 134-1 to 134-n / i and the gates of each channel are connected to the RW SELECT1 signal, and the N channel M0S The gates of the column selection transistors 134- (n-j) to 134-η are connected to each other.

Page 19 448 683 V. Description of Invention (16) ------ No. The source of the N-channel MOS column selection transistor 134-1 to i34-rn kn-j) is connected to the first row of output lines 132-1, and the N-channel MOS column selection transistor 134 — n /. To 1 3 4-j The source is connected to the row output lines 1 3 2-j. η 1 In the operation of the active pixel sensor 100-5, the charge stored in any storage node 10 6-1 to 106-n is correspondingly added to the storage node 106_ι to ι〇6_η coupled N channel The R⑽SELECT1 to ROW SELECTi signals of the MOS column selection transistors 134-1 to ι34_η are read out, and the measured output nodes 1 0 6-1 to 1 0 6-η are coupled to the row output lines 丨 3 2 ~ 1 to "132-j. For example, to select a storage image provided on the storage node 1G6-i, the ROW SELECT1 signal will be maintained, and the aCOLUMN⑽ ^^ 丨 line 138-1 will be selected. When most storage nodes are used, a matrix of storage nodes between multiple RW SELECT lines and multiple row output lines 〇 061-1 to 〇 6 reduces the number of additional columns and rows and lines required. We should also understand that instead of the single common XFR line described in FIG. 1, it will have XFR1 to “heart common conversion line.” The active pixel sensor 1 0 0 _ 6 described in FIG. 10 appears in storage node 1 The voltages on 0 6-1 and 1 6 0-2 are read out using the same column selection signals as differential signals on row output lines 140-1 and 140-2. Therefore,! ^ Channel M0S column selection transistor The 136 and N-channel M0S readout transistors 112-1 to 112-2 are combined into a differential amplifier, so the sources of the N-channel M0s readout transistors 1 12-1 to 1 12-2 are each connected to the N-channel M0s column selection transistor 丨 36 Drain 'N channel M0S readout transistor 1 1 2_i to 1 1 2-2 The drains are connected to the first and second row output lines 140-1 to 140-2 The source of the N-channel M0S column selection transistor 1 3 6 is connected to a row of bias lines 1 3 8 and the N-channel M 0 S column is selected

Page 20 ^ 48 683 V. Description of the Invention (π) The sensor of the transistor 1 36 is connected to a SELECT signal. In the operation of the active pixel sensor 1 00-6, the N-channel M0S read transistor 112 ^ 1 to 1 12-2 and the N-channel M0S column select transistor 13Θ form a differential amplifier, so when the ROW SELECT signal becomes HIGH At this time, the N-channel Mos column selection transistor 136 is turned on, and the differential No. 1 on the storage nodes 106- and 16-2 is read out on the row outputs yo-1 and 14〇-2. Differential readout of storage nodes 1061 and 0-2 can be used in different ways. For example, differential reading can be used to read a different relationship between a dark frame and L. In this method, the mutual noise can be removed, leaving only the pixel noise i—Bufei's interrelated pixel noise, “differential readout, can also be used as a spare for processing and writing of debt measurement image changes. This kind of change detection is particularly useful in security cameras such as dragging and correcting ^ ^ ”# machines, and is used for #automatic object tracking in“ Blue-Screen ”, we should understand the setting in Based on the production of the active pixel sensor in this embodiment, the differential readout circuit can also be set in a single circuit. Placing the differential readout telecommunication frame in a circuit before and after the change of the measurement will allow the embodiment and application of the present invention to be detailed 4 ° ^ is lightly displayed and explained, for those skilled in this art than The concept of the invention of the more advanced film mentioned above should be obvious. It is possible that the present invention will not be violated, and the invention will not be restricted. In addition, please ...

Claims (1)

448 683 VI. Application for patent scope 1. An active pixel sensor arranged on a _ Ψ w 丄 ^ + conductor substrate, including: a light sensor, the first terminal; a first terminal and a second terminal Connected to the first reference potential: one with the first—the second child connection—the fan department connected the light sensor, the second terminal, and the second terminal body; and the third terminal is connected to a reset line with a reset cable A plurality of crystals are connected to the xuan # π, 2 Rushen 2 ΐ ί Ϊ sensor storage node of the second terminal. Includes devices that are connected to the multiple active pixel sensors and still contain value. The point is used to output from any of the majority of storage nodes. 3. For example, in the scope of patent application No. 1 — silk, containing multiple conversion lines, complex — an active pixel sensor, still includes independent majority conversion electrical tc Most storage nodes use each: the power supply sun and the sun have a first terminal connected to the light sensor and a first terminal of the female, and a third terminal of the majority of the conversion lines that are independent of each other. '第一 柒 子 和 连接 各自 独 independently 4' such as the scope of the patent application-each hunting w μ 笔 # π + active pixel sensors, where most of the storage nodes are connected for 钤 Ψ Φ ν ν use each independent The majority of the readout transistor should be installed in the majority of storage node values. [The readout has a first terminal connected to the respective independent majority storage node, a second terminal connected to the potential, and a connection for output. The third terminal of the majority Jian Lang point device. 5. An active pixel sensor as described in item i of the patent, 448683 6. Scope of patent application Contains multiple storage elements, each of which is independent of the storage element having a first terminal connected to the independent storage node and a second terminal connected to a second reference potential. 6. An active pixel sensor according to item 2 of the patent application scope, wherein the device for outputting a value includes: a plurality of row output lines; a column selection line: and a plurality of column selection transistors, each of which is independent of each other. The column selection transistor has a first terminal connected to one of the plurality of storage nodes, a second terminal connected to one of the plurality of row output lines, and a third terminal connected to the column selection line. 7. If one of the 6th category of the patent application-an active pixel sensor, still includes a plurality of conversion lines, each of which is independent of the majority node is connected to the first of the light sensor using the independent conversion transistor. Two terminals. The conversion transistor has a first terminal connected to the light sensor and the second terminal, a second terminal connected to the independent majority storage node, and a third terminal connected to the independent majority conversion line. 8. For example, an active pixel sensor according to item 6 of the application, wherein each of the storage nodes separated by a separate majority of readout transistors is connected to the separated columns of the majority to select the transistor and the first terminal, The readout transistor has a first terminal connected to the storage node separately, a second terminal connected to a second potential, and a third terminal connected to the first terminal of the plurality of column selection transistors. 9. If an active pixel sensor of item 6 of the scope of patent application, Page 23 448683 6. Scope of patent application Contains multiple storage elements, each of which is independent of the storage element having a first terminal connected to a respective independent storage node and a second terminal connected to a second reference potential. 10. The active pixel sensor according to item 2 of the scope of the patent application, wherein the device for outputting comprises: a plurality of column selection lines; a row of output lines; and a plurality of column selection transistors, each of which selects the column. The transistor has a first terminal connected to one of the plurality of storage nodes, a second terminal connected to the row of output lines, and a third terminal connected to one of the plurality of column selection lines. 1 1. An active pixel sensor according to item 10 of the patent application scope, further comprising a plurality of conversion lines, each of which is a separate storage node using a plurality of independent conversion transistors. The two terminals are connected to the second terminal of the light sensor, the conversion transistor has a first terminal connected to the second terminal of the light sensor, a second terminal connected to each of the plurality of storage nodes, and A third terminal connected to a plurality of independent conversion lines. 1 2. An active pixel sensor according to item 10 of the scope of patent application, wherein each of the storage nodes separated by a separate majority of readout transistors is connected to the separated columns of the majority to select the transistor the first A terminal, the readout transistor has a first terminal connected to the storage node separately, a second terminal connected to a second potential, and a third terminal connected to the first terminal of the plurality of column selection transistors. 1 3. An active pixel sensor according to item 10 of the patent application scope. Page 24 448683 6. Scope of patent application " -------- __ Contains multiple storage elements, each of which is independent = the first terminal of the storage node which is independent of each other is = the wrongly stored piece has a second connection Terminal. 1 connected to the second reference potential 4. The device for outputting a value as described in item 2 of the scope of patent application includes: a pixel sensor, in which one column of selection lines; one row of output lines; multiple image selection lines; one column The selection transistor has a plurality of image selection transistors, which are remotely connected to the second terminal, the second terminal connected to the output line of the row, and the first end of the second line. The one terminal and the three terminals have a second terminal connected to the third terminal thereof and a third terminal connected to the CLP Solar Corporation. Zhongzhi-the plurality of image selection lines 15. As one of the items in the scope of application for patent No. 14, each of the independent majority storages uses the independent night-time conversion transistors to connect the light sensor and the second terminal, 忒The conversion transistor has a son connected to the light sensor and the second terminal, a second terminal connected to the independent majority storage node, and a third terminal connected to the independent majority conversion line. 16 As in item 14 of the scope of the patent application-an active image, the storage node uses a majority of reads that are separated from each other to select the transistor. The -terminal has a first connection to the storage node that is separated from each other. 448683 VI. Patent application: One terminal, the second terminal connected to the second potential, and the third terminal connected to the first terminal of the majority selected image transistor. 1 7. An active pixel sensor according to item 16 of the patent application scope, further comprising a plurality of storage elements, each of which is independent of the storage element having a first terminal connected to the independent storage node and a second reference. The second terminal of the potential. 1 8. An active pixel sensor according to item 4 of the scope of patent application, wherein the device for outputting a value includes: a row of selection lines; a row of output lines; multiple image selection lines, each of which is an independent image selection line The third terminal connected to the independent readout transistor; and a column of selection transistors having a first terminal connected to the column selection line, a second terminal connected to the row output line, and each of the plurality of readouts The third terminal of the second terminal of the transistor. 19. An active pixel sensor according to item 18 of the scope of patent application, which still includes a plurality of conversion lines > wherein each of the independent majority storage nodes uses the independent majority of conversion transistors to connect the light sensor to A second terminal, the conversion transistor has a first terminal connected to the light sensor and the second terminal, a second terminal connected to the independent majority storage node, and a third terminal connected to the independent majority conversion line. 20. An active pixel sensor according to item 8 of the patent application scope, which further includes a plurality of storage elements, each of which is independent of the storage element having a first terminal connected to the storage node and a second reference connected to the storage node. Of potential P.26 # 48683 6. Scope of patent application Second terminal. 2 1. An active pixel sensor according to item 2 of the patent application scope, wherein the device for outputting a value comprises: multiple row output lines; multiple column selection lines; and multiple column selection transistors, each Each of the independent column selection transistors has a first terminal connected to the plurality of storage nodes, a second terminal connected to the plurality of row output lines, and a third terminal connected to the plurality of column selection lines. 2 2. An active pixel sensor according to item 21 of the patent application scope, further comprising a plurality of conversion lines, wherein each of the independent majority storage nodes uses the independent majority of conversion transistors to connect the light sensor to the first Two terminals, the conversion transistor has a first terminal connected to the light sensor and the second terminal, a second terminal connected to the independent majority storage node, and a third terminal connected to the independent majority conversion line. 2 3. An active pixel sensor according to item 21 of the scope of patent application, wherein each of the storage nodes separated by a plurality of readout transistors separately connected to one of the majority selects the transistor the first Terminal, the readout transistor has a first terminal connected to one of the plurality of storage nodes, a second terminal connected to a second potential, and a third terminal connected to the first terminal of the plurality of column selection transistors. 2 4. An active pixel sensor according to item 2 of the patent application scope, which further includes a plurality of storage elements, each of which is independent of the storage element having a first terminal connected to the storage node and a second reference connected to the storage node. Of potential Page 27 448683 VI. Patent application scope Second terminal 25. If the scope of patent application is for an active pixel sensor for outputting a value item, one column of selection lines includes: one row of bias lines; the first and The second row turns out of the line, and the sub-column selects the transistor. That is, the bias line connected to the row has a first end connected to the column selection line, among which the plurality of storage private terminals and the third terminal; Point 'The first storage node = 1 includes the first storage node and the second storage node. The second terminal is connected to the jth terminal, and the first terminal is connected to the first storage transistor. The third terminal = the line is rotated out. Line and the third terminal is connected to the device with the selected value, and the second ^ is read out. The transistor is connected to the wheel for storage — the storage node, and the second terminal is connected to the node to have the first terminal connected to the second column. Select the third terminal of the transistor, the first terminal of the transistor, and the third terminal connected to a device that outputs a value. The second readout transistor is connected to 26. For example, the scope of application for patent No. 25 includes a plurality of conversion lines, one of which is an active pixel sensor. The independent majority of the conversion transistors are independent. The node uses the conversion transistor to have a connection to the ^, to the light sensor and the second terminal, and to the respective independent multi-counter. The second terminal of the second terminal is independent of the majority of Han Zhen # The #_ 27 of the node is the third terminal of the application line. Younger sister-in-law and connection. For example, the storage element of claim 25 has a connection Page 28 includes three storage elements, each of which is an active pixel sensor, still 448683. 6. Scope of patent application The first terminal of the storage node and the second terminal connected to the second reference potential are independent of each other. 2 8. An active pixel sensor arranged on a semiconductor substrate, comprising: a light sensor having a first terminal and a plurality of second terminals, the first terminal being connected to a first reference potential; One terminal is connected to the light sensor, the plurality of at least one second terminal, the second terminal is connected to a reset potential, and the third terminal is connected to a reset transistor of a reproduction line; and a plurality of storage nodes, each of the plurality of storage nodes Each of the light sensors is connected to the second terminal independently. 29. The active pixel sensor according to item 28 of the patent application park, which further comprises a device for connecting the plurality of storage nodes for outputting a value from any of the plurality of storage nodes. 30. An active pixel sensor according to item 28 of the patent application scope, further comprising a plurality of conversion lines, wherein each of the independent majority storage nodes is connected to the light sensor with a separate majority conversion transistor. One of a plurality of second terminals, the conversion transistor has a first terminal connected to the one of the plurality of second terminals, a second terminal connected to each of the plurality of independent storage nodes, and each connected independently The third terminal of most conversion lines. 3 1. An active pixel sensor according to item 29 of the scope of patent application, wherein each of the plurality of independent storage nodes is connected to each of the plurality of storage nodes by a plurality of independent readout transistors, respectively. Worth the load Page 29 448 683 6. The scope of the patent application is set: the = output transistor does not have a first terminal connected to the respective independent storage nodes, a second terminal connected to a second potential, and a connection from the plurality of storage The third terminal of the device is rotated by any one of the nodes. 3 2. An active pixel sensor as claimed in item 28 of Shenqing Patent, which still contains multiple storage 7L pieces. Each of the storage elements has its own first-terminal and connection-side connected to the storage nodes. Second terminal of two reference potentials. 3 3. An active pixel sensor according to item 29 of the scope of patent application, wherein the plurality of row output lines for outputting a value are: one column selection line; and a plurality of column selection transistors, each of which is connected to the multiple A second terminal of one of the storage nodes in one of the output lines. An independent pixel selection transistor has a first terminal, a plurality of connection terminals, and a third end 34 connected to the selection line of the column. For example, an active pixel sensor according to item 33 of the patent includes a plurality of conversion lines. Each of them is independent of each other, and a plurality of independent conversion transistors are connected to the light sensor: point :; dip :: the conversion transistor has a first terminal which is connected to the light sensor, and its d pin. The thirty-fifth point of the third terminal of the independent majority of the second storage terminal and the independent majority of the conversion lines is as described in item 33 of the scope of patent application. Crystal connection-the majority of the columns separated from each other are selected; crystal; number = electricity Page 30 448683 VI. Scope of patent application The readout transistor has a first terminal connected to the storage node which is separated from each other, a second terminal connected to the second potential and a plurality of selected transistors which are connected to the separated columns. Third terminal of one terminal. 36. An active pixel sensor according to item 33 of the patent application scope, further comprising a plurality of storage elements, each of which is independent of the storage element having a first terminal connected to the independent storage node and a second reference potential第二 terminal。 The second terminal. 3 7. An active pixel sensor according to item 29 of the patent application scope, wherein the device for outputting comprises: a plurality of column selection lines; a row of output lines; and a plurality of column selection transistors, each of which selects The transistor has a first terminal connected to one of the plurality of storage nodes, a second terminal connected to the row of output lines, and a third terminal connected to one of the plurality of column selection lines. 3 8. An active pixel sensor according to item 37 of the patent application scope, further comprising a plurality of conversion lines, wherein each of the independent majority storage nodes is connected to the light sensor by an independent majority conversion transistor. A second terminal, the conversion transistor having a first terminal connected to the one of the second terminals of the light sensor, a second terminal connected to the respective independent majority storage nodes, and a second terminal connected to the respective independent conversion lines Third terminal. 3 9. An active pixel sensor according to item 37 of the scope of patent application, wherein each of the storage nodes separated by a separate majority of readout transistors is connected to a separate column of the majority selection transistor and the first A terminal, the readout transistor has a first end connected to the storage nodes which are respectively separated Page 31 448683 VI. Patent application scope 'The second terminal connected to the second potential and the third terminal connected to the separate column selected transistor the third terminal of the first terminal 3 4 0 An active pixel sensor according to item 7, further comprising a plurality of storage elements, each of which has a first terminal connected to the storage node and a second terminal connected to the second reference potential. 4 1. An active pixel sensor according to item 29 of the scope of patent application, wherein the device for outputting a value comprises: a row of selection lines; a row of output lines; a plurality of image selection lines; a τ column selection transistor, It has a first terminal connected to the column selection line, a second terminal and a third terminal connected to the row output line, and a plurality of image selection transistors, each of which has one of more than one The first terminal of the storage node is connected to the column to select electricity a ^ the second terminal of the third terminal and to connect one of the plurality of shadowy two sa _, _ t selection line 4 2 'as in the scope of patent application No. 41 An active pixel sensor includes a plurality of conversion lines, each of which is stored in an independent majority. D ′ is the point a. The independent majority of the conversion transistors are connected to the light sensor, and one or two terminals are connected. The conversion transistor has a first terminal connected to the photo sensor and a younger terminal thereof, a first terminal connected to each of the independent majority storage nodes, and a third terminal connected to each of the independent majority conversion lines.4 3 · If an active image + 像, a of the scope of patent application, item 41, Page 32 448 683 VI. Application for patent scope '--- _Each storage node that is separated from each other is connected by a separate polycrystal-the majority of the images are selected separately. The first terminal of the terminal is connected to the separated The third terminal of the first terminal of the storage node and the third terminal of the first terminal of the transistor are connected to the respective separated images. 〇Λ 44. According to item 43 of the scope of the patent application-an active element package J, a plurality of storage elements, each of which is independent of the storage element and has a naming second: a terminal of the storage node and a connection 45_ of the two reference potentials. The device for output-value as described in item 31 of the scope of the patent application includes: its 7-column selection line; _-row output line; π f image selection lines, each independently Image selection @ ii — the third terminal of the magic and Jing out transistor; and: == it has the first terminal connected to the column selection line, the second terminal of the -x = = line and each connected to the multiple Readout 46. Rushen; straight Λ third terminal ° 'contains multiple turns: an active pixel sensor around item 45, still independent of each other: each of the independent majority of storage nodes in Ϊ with-2 Terminal, the transistor is connected to one of the light sensors-the second terminal of the crystal has a second terminal connected to the light sensor, one of the second terminals, and connected to the respective first and second storage nodes. The third terminal of each independent majority of conversion lines Page 33 4 48 68 3 VI. Scope of patent application — 4 7. Rushen: An active pixel sensor of item 45 of the monthly patent scope still includes multiple storage elements, each of which is independent of each other The first terminal of the remaining node and the second terminal connected to the second reference circuit. 48. The active pixel sensor according to item 29 of the scope of patent application, wherein the device for outputting a value includes: multiple row output lines; multiple column selection lines; multiple column selection transistors, each column The selection transistor has a first terminal connected to the plurality of: storage nodes, a second terminal connected to one of the plurality of row output lines, and a third terminal connected to each of the plurality of column selection lines. — 49. For example, after the main description of item 48 of the scope of the patent application, the main β includes multiple conversion lines, each of which is independent: a plurality of independent conversion transistors with multiple image numbers are connected to the light sensor, and one of them is two. The terminal, the conversion transistor has the first-terminal connected to the n two terminals of the μ device, the second terminal connected to the respective terminals, and the third terminal connected to the independent majority of the conversion lines. . Such as the scope of an application for patent 48, a kind of active fool. Each of the storage nodes that are separated from each other uses-each, "testers" whose transistors are connected to one of the majority to select a transistor: a number of f must be out of the bottle. First, the current read transistor has a connection to the One of the plurality of storage nodes is connected to the second worm of the second potential with a sub- ', and the third terminal of the first terminal of the plurality of selection transistors is connected to one of the plurality of columns. Page 34 448683 VI. Patent application scope: An active pixel sensor that contains multiple storage Y-Liganwei items 48, from independent two elements, each of the independent storage elements has a connection第二 terminal。 The second terminal. The first terminal of the sub-point and the t ^ ^ ^ ^ ^ ^ ^ ^ A line of selection lines; 含 l contains: one line of bias lines; the first and second lines are rounded out; the sub-points are one line Select the transistor, which is connected to the line of the bias line of the row, the first end of the selected line, and the second terminal and the third terminal; and the storage node includes the first storage rib g_ The first storage node is connected to the storage point of the 3rd storage node and the second terminal of the second storage node. The second terminal is connected to the first storage transistor and the i terminal is 3; the wire is selected and the third terminal is connected to the selected value. Device ... The first readout transistor is connected to this wheel-out node, and the first node is connected to the second column with the first terminal to select the transistor. The first output line of the first terminal and the third terminal Connection wheel-out device—the second readout transistor is connected to the active pixel sensor for package 5: Λ ', the 52nd item in the patent scope, which has its own independent line, and each of them is independent. Most of the storage nodes are connected to the light sensor with a -_ independent independent majority of conversion transistors. mp; the first end of the child, connected to the independent majority of storage nodes Page 35 Two = sub, the conversion transistor has two of them connected to the light sensor 448 b c ο 6. Patent application scope Two terminals and a third terminal connected to the independent majority of the conversion line. 54. An active pixel sensor according to item 52 of the scope of patent application, which still includes multiple storage elements, each of which is independent of the storage element having a first terminal connected to the independent storage node and a second reference The second terminal of the potential. 5 5. —A method of operating an active pixel sensor, the active pixel sensor has a light sensor, a reset transistor, a plurality of storage nodes connected to the light sensor, and a plurality of storage nodes A device for outputting a value from any one of the plurality of storage nodes. The method includes the following steps: turning on a reset transistor to configure a reset potential on the photo sensor; Time-shifted charging to the first storage node of the plurality; and-. Switching from the light sensor to the second storage node of the plurality of storage nodes for a second duration. 5 6. A method of operating an active pixel sensor according to item 55 of the scope of patent application, wherein the first duration begins to coincide with the second duration ° 5 7. An operation of item 55 of the scope of patent application The active pixel sensor method, wherein the second duration begins after the first duration has ended. Page 36