TW442954B - Layout structure for promoting integration - Google Patents

Abstract

This invention is about a kind of layout structure for promoting integration. The layout structure includes an active region, gate pattern, source pattern and drain pattern. The active region includes plural gate regions, plural source regions and plural drain regions. Gate pattern is located on the gate region. Source pattern and drain pattern are located on the source region and the drain region, respectively, both the source pattern and the drain pattern are composed of plural conducting layers, which include the first conducting layer and at least one layer of the second conducting layer. The second conducting layer has a rectangular shape, in which part of its area covers the top of active region.

Description

" v 4429 5 A A7 ____ B7______ 5. Description of the invention () 5 -1 Inventive jaw area: (Please read the notes on the back and fill out this page) The present invention is related to a layout structure, especially to improve the integration degree The layout structure is related. 5-2 Background of the Invention: Gold halves half field effect transistors (MOSFETs), referred to as MOS transistors, are widely used in integrated circuits. This element has a gate, a source, and a drain. When a large current is required, usually several transistors are connected in parallel to form a multi-finger MOS device as shown in the first circle (a) = design rules for the layout of the integrated circuit (Design rule), the maximum current resistance of each metal layer (the degree of current resistance) is a factor that must be considered, if the current density flowing through this metal layer exceeds the maximum current resistance allowed by this design rule When this temperature is exceeded, the metal layer may be burned and the component may fail due to an open circuit. The maximum current resistance of each metal layer printed by the Shelley Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is related to the material characteristics of the metal, and is proportional to the width in the vertical current direction, that is, the greater the width, the degree of current can be received. The bigger. However, in order to achieve a layout structure with a minimum area, the investigation of the metal layer is usually designed only to the minimum line width allowed by the design rule. At the minimum line width, if the required current density exceeds the maximum current resistance of a single metal layer, multiple metal layers must be laminated 'and this paper is applicable in the national standard Drought < CNS) A4 Specification < 210 «297 mm) A7 442954 B7_ 5. Description of the invention () The laminated metal layers are electrically connected (parallel) by a contact window, so that they can jointly withstand the current flowing through them. However, in the conventional technology, when a plurality of metal layers are stacked to bear the current density flowing therethrough, the optimal layout structure cannot be achieved, because the shape of each stacked metal layer is the same and completely overlaps, so Its integration cannot be effectively improved. After referring to the first diagrams (a)-(c) and the following descriptions, you will learn more about its origin. The first figure (a) is a conventional layout structure of a multi-finger MOS device. The multi-finger MOS device is formed by connecting a plurality of MOS transistors in parallel to provide a large current /. The source and drain of several MOS transistors are connected to each other. As shown in the figure, the multi-finger MOS device has an active region 5 ′, several gate regions 10, several source regions 20, and several drain regions 30, because the multi-finger MOS 0S The device is composed of several MOS transistors connected in parallel, so these source regions 20 must be electrically connected. For example, the source region 20 is used to form an electrical quick junction by the source scheme 40; the same In principle, the plurality of drain regions 30 are also electrically connected by drain connection wires 60. Please refer to the first figure (b) > This figure illustrates the layout structure of the source pattern 40 in the first figure (a). The source circle 40 is composed of two metal layers, such as the first of the source pattern. The first layer 51 and the second layer 52 of the source pattern are formed by first forming the first layer 51 of the source pattern, and then forming the second layer 52 of the source pattern on the first layer 51 of the source pattern. And the source pattern of this paper is applicable to a standard (CNS) A4 specification (210 * 297 mm) --------- I! ^ * III — I — Order '(please read seven "- Please fill in this page for the business matters above) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4429 5 4 A7 _B7_ V. Description of the invention () (Please read " -Notes above before filling in this page) Level 1 An electrical connection is formed between 51 and the second layer 52 of the source pattern by a contact window or a plug 70. The first layer 51 and the second layer 52 of the source pattern are completely identical and overlap, so only the first layer 51 of the source pattern is shown in the figure, and the number 5 2 of the source pattern is indicated by the bracket number 5 2 Second floor 5 2. Wherein, the first layer 51 of the source pattern is a multi-finger structure, including a plurality of finger portions 5 1 a, and a connecting portion for connecting the plurality of finger portions 5 1 a. 5 I b; Similarly, the second layer 5 2 of the source case is also a multi-finger structure, including a plurality of finger parts 5 2 a, and a finger part 5 for connecting the plurality of finger parts 5 The connection part of 2 a 5 2 b Please refer to the first figure (c). The drain pattern 60 used to connect several drain regions 30 in the first 圊 (a) is also composed of two metal layers, for example The first layer 61 of the drain pattern and the second layer 62 of the drain pattern are also formed by first forming the first layer 61 of the drain pattern, and then forming the second layer 62 of the drain pattern. The first layer 61 of the pattern is electrically connected between the second layer 62 of the drain pattern and the first layer 61 of the drain pattern by a contact window or a plug 70. The first layer 61 of the drain pattern and the second layer 62 of the drain pattern are identical and overlap. The first layer 6 1 of the drain electrode pattern is a multi-finger structure, which includes a plurality of finger portions 6 1 a, and a connecting portion for connecting the plurality of finger portions 6 1 a. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6 1 b; Similarly, the second layer 62 of the Djiji case is also a multi-finger structure, which includes a plurality of finger portions 6 2 a, and one A connecting portion 62b connecting the plurality of finger portions 62a is provided. Please refer to the first picture (a). The above-mentioned Source® Case 40 is formed in the active area. 5 This paper size is applicable to the National Standard (CNS) A4 grid (210 X 297 mm). 4429 5 4 A7 __B7_F 2. The source electrode 20 of the invention description: Similarly, the drain pattern 60 is formed on the drain electrode 30 of the active region 5, and the gate electrode 10 is located on the adjacent source electrode 20 and the drain electrode 30. In order to form a device with a source 20, a drain 30 and a gate 10. Next, the layout area required by the conventional technology will be described. Please refer to the first figure (a). If the first layer of the source pattern and the first layer of the drain pattern are known, the maximum current resistance is A ( mA / ym), and the maximum current resistance of the second layer of the source pattern and the second layer of the electrode pattern is B (mA / # m), then the source pattern 40 or the drain® case 60 The minimum line width jealousy can be calculated according to the following formula (1) or (2):

(A + B) F (1) --------------) Install --- < Please it; read the note on #. And then fill out this page) W = II (A + B) (2) In addition, if the width of the active region 5 of the multi-finger MOS device is Γ and the length is i, the minimum layout of the multi-finger MOS device can be obtained according to formula (2). The area (d) is as follows (3):

A = {2W + T) L (3) Order --------- line, printed by a member of the Intellectual Property Bureau of the Ministry of Economic Affairs and printed by a consumer cooperative, that is,

+ T

L (4) This paper size is applicable to a national standard (CNS) A4 specification (210x297 male «) Η '4 429 5 4 Α7 __ S7__ V. Description of the invention () According to formula (4), the above-mentioned layout area d is mainly It is composed of the area of the active region 5, the area of the source pattern 40, and the area of the drain pattern 60. The source pattern 40 and the drain pattern 60 occupy a lot of layout area, so that the degree of integration cannot be effectively improved. Without changing the characteristics of the element, it is not possible to reduce the layout area by reducing the active area 5 in order to improve the accumulation degree, because the characteristics of the multi-finger MEMS device are the width Γ and the length B of the active area 5. In addition, without changing the process conditions, what can be changed at this time is to reduce the area of the source pattern 40 and the area of the drain pattern 60. 5-3 Purpose and Summary of the Invention: In view of the above background of the invention, when the conventional technology stacks multiple metal layers and connects them in parallel to bear the current density flowing through them, the metal layers occupy a lot of layout area. Together, it will make it impossible to effectively improve the degree of integration. Therefore, the present invention proposes a layout structure that can withstand the same maximum current with a smaller layout area; or, under the same component area, it can withstand larger Current (current density). In this way, the integration degree of the integrated circuit using the layout structure of the present invention can be significantly improved. The outline of the present invention is as follows: a layout structure for improving the accumulation degree | including an active region, a gate pattern, a source pattern, and a drain pattern '' The active region includes a plurality of gate regions, a plurality of source regions, and a plurality of drain books The paper size applies the Chinese national standard < CNS) A4 specification (210 * 297 mm >). (Page) Order --------- line 'Consumption cooperation by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs ^ A7 _B7_ V. Description of the invention () Gate area, where the gate pattern is located on the gate area. The source pattern is composed of a plurality of conductive layers, including a first layer of a source pattern and at least one first layer of the source pattern. The first layer of the source pattern is located on the conductive layers. The bottom layer is a multi-finger structure. The multi-finger structure includes a finger part and a connection part, and the finger part is formed on the source region. In addition, it is worth noting that the source pattern The second layer (formed on the first layer of the source pattern and further above the conductive layer (formed on On the second layer of the source pattern) is not a multi-finger structure, but a rectangle, and part of the rectangle covers the active area. Similarly, the drain pattern is also composed of a plurality of conductive layers. The structure includes a first layer of a drain pattern and at least one first layer of a drain pattern. The first layer of the drain pattern is located at the bottom of the conductive layers and has a multi-finger structure. The multiple finger structure includes a finger portion and a connecting portion, and the finger portion is formed on the drain region. In addition, it is worth noting that the second layer of the drain pattern (formed on the first layer of the drain pattern) Layer), and the upper conductive layer (formed on the second layer of the drain pattern) is not a multi-finger structure, but a rectangle, and part of this rectangle covers the active area. S -4 Schematic illustration: The preferred embodiment of the present invention will be described in more detail in the following explanatory texts with the following figures: This paper is suitable for the Chinese National Standard (CNS) A4 specification (210 X 297 mm) G) --------- 丨 丨 丨) installed · (Please read—Notes above before filling out this page) Order -------- Line Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

V. Description of the invention () The first picture (a) is a conventional layout structure of a multi-finger MOS device. This multi-finger M 0 S device is formed by connecting a plurality of M OS transistors in parallel. ) Is the source pattern of the conventional layout structure of the first figure (a), and the source pattern is formed by stacking several layers of identical conductive patterns. The first frame (c) is a non-polar pattern of the conventional layout structure of the first frame (a), and the drain frame is formed by stacking several layers of identical conductive patterns. The second figure (a) is an active area in the embodiment of the present invention, and the active area has a plurality of gates. The second (b) is the first layer of the source pattern of the present invention, which is a multi-finger structure. The second figure (c) is the layout structure where the first layer of the drain circle is formed on the active area. The second figure (d) is the first layer of the drain pattern of the present invention, which is a multi-finger structure. Please read the back first. Fill in the above meanings and then fill out this page. The Ministry of Economic Affairs, the Ministry of Wisdom 3¾ Printed by the Consumer Cooperative of the Production Bureau. The second picture (e) is the first layer of the drain case and the second layer of the drain case. The layout structure formed on the active area "The third figure (a) is the second layer of the drain pattern and the second paper size of the drain pattern is applicable to the Chinese national standard (CNS > A4 now standard (210 * 297 mm) ), 4A29 5 4 a7 B7 V. Description of the layout structure of the () layer. The third figure (b) is the layout structure of the present invention. The fourth circle (a) is the source pattern in the second embodiment of the present invention. The circle of the first layer and the first layer of the source pattern has a sawtooth edge. The fourth circle (b) is the layout structure of the second embodiment of the present invention. Comparison of circle numbers: (Please read the Note: Please fill in this page again.) U. Printed by the Consumer Cooperative of the Intellectual Property Office of the Ministry of Economic Affairs 5 Active area 20 Source area 3 0 Drain area 50 Active area 70 Second contact window 2 00 Source area 3 00 Drain area First layer of 510 source pattern 5 1 0 b Source connection part 6 0 0 Drain pattern 6 10a Drain finger part 620 Drain pattern second layer 720 Source pattern second layer 1 0 Gate region 25 First contact window 40 Source pattern 60 Drain pattern 1 0 0 Gate region 250 First Contact window 500 source case 5 1 0a source finger portion 5 20 second layer of source pattern 610 first layer of drain pattern 6 1 0 b drain connection portion 700 second contact window 820 drain The second layer of the design of the paper is used in the paper size of the Chinese National Standard (CNS) A4 (2 丨 0297mm) 4429 5 4 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs -5 Detailed description of the invention: In the layout structure of the present invention, the source pattern and the drain pattern are composed of a plurality of conductive layers, and the first conductive layer and the second conductive layer are sequentially numbered upward from the active area. …, Part of the area of the second conductive layer and above is overlapped on the active area (the conventional technology does not have such a design), so the area can be much larger than the conventional technology under the same current Reduction; or, in the same component area, The degree can be greatly increased compared with the conventional technology. As for the more detailed embodiment, it is explained as follows. First practical package example The first embodiment of the layout structure of the present invention is shown in the second figure (e) with multiple fingers ( Multi-finger) MOS device is illustrated. As shown in the figure, the multi-finger MOS device has an active region 50, a plurality of gate regions 100, a plurality of source regions 200, and a plurality of drain regions 300, each of which The gate regions 100 are all located between a source-pole region 200 and one; and a pole region 300. Because the multi-finger MOS device is formed by connecting a plurality of MOS transistors in parallel in the circuit structure, the plurality of source regions 2000 must be connected by wires, for example, the source can be connected to the wire 510. They are connected to each other to form a source pattern 500, and the source pattern 500 is formed by stacking a plurality of conductive layers, such as layer 4 formed by two conductive layers. (Please read the notes on the back before filling this page) This paper size is applicable to China's national standard (CNS > A4 size (210X297 cm) A7 B7 V. Description of the invention () Similarly, this plurality of drain regions 3 00 must also be connected to each other by the pole connecting wire 6 1 0 to form a drain pattern 600, and the electrode pattern 600 is formed by stacking a plurality of conductive layers, for example, two layers The conductive layer is stacked. Still referring to the second circle (e), the source pattern 500 is formed by stacking a plurality of conductive layers, for example, "the first layer of the source case" 5 丨 〇, " The second layer of the source pattern "5 2 0 ... the 0th layer of the source pattern" and so on. Similarly, the drain circle 600 is also formed by stacking a plurality of conductive layers. For example, "the first layer of the drain pattern" 6 丨 〇, "the second layer of the drain threshold" 620 · · "? And the first layer of the drain pattern", and so on. See also The second circle (a) 'is an active area 50 having a length and a width of approximately i and Γ', respectively, and the active area 50 has a first long edge 5 a and a second long edge 50b. Several gate conductive patterns serving as gate electrodes span across the active area 50. * Printed by the Ministry of Economic Affairs, the Intellectual Property Bureau of Chu Chu, see the second work Circle (b), the first layer 51 of a source pattern is a multi-finger structure, which includes a plurality of source finger portions 5a and a source connection portion 5 1 Ob. Among them, the appearance of each of the source finger portions 5 1 〇a has a long stripe shape, because the source finger portions 510a span the active area (not shown) as the source electrode in the layout structure. Electrode, so its longitudinal length is at least greater than the width Γ of the active region. In addition, one end of each source finger portion 5 1 0a forms a whole limb pattern by the connection of the source connection portion 5 [Ob] ° The appearance of this source extremely fast knot part 5 1 0 b is also a long strip-this paper size uses China National Timo < CNS} A4 wash grid (210X 297 mm) 442954 A7 B7 employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative V. Description of the invention () Its length and width are about I and jealousy respectively, and this source is connected The portion 5 1 〇b has a "longest outer edge", which refers to the longer outer edge which is not connected to the source finger portion 5 I 0 a. Please refer to the second figure (c). A first layer 51 of the source connection pattern is formed on the active region 50, and a 'source finger portion 5ioa is formed on the source region 200 of the active region 50, and at least one first contact window is formed. 250 is electrically connected to the source region 200 as a source electrode. Please refer to the second figure (d). The first layer 61 of a drain pattern is a multi-finger structure including a plurality of drain electrodes. The finger part 6 丨 〇a and a drain connection part 610b »Among them, the appearance of each drain finger part 61〇a has a long stripe shape. The structure spans the active area (not shown) as the anode electrode, so its longitudinal length is at least greater than the width Γ of the active area (as shown in the second figure (a)). In addition, one end of each of the drain finger portions 6 丨 0a forms an overall pattern by the connection of the drain connection portion 610b. The appearance of this drain connection portion 6i0b also has a long shape. The length and the width are respectively about and. The drain connection portion 6 1 Ob has a “longest outer edge”, and the longest outer edge refers to a longer outer edge that is not connected to the drain finger portion 610a. Please refer to the second ffl (e). The first layer 610 of the drain pattern is formed on the active region 50. The drain finger portion 6 丨 0a is formed on the drain region 300 of the active region 50. The at least one first contact window 250 is used to form an electrical connection with the drain region 300 to serve as a drain electrode. And the winter paper scale uses the National Cocoon Standard (CNS) A4 gauge (210X2.97 public envy) { Please read the precautions on the back before filling out this page). Order YY · * II ff 4429 5 4 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7__ -------- * V. Description of Invention () The gate conductive pattern 100 is located between the adjacent source finger portion 5 10a and the pole finger portion 6 1 0 a to constitute MOS device with source, gate, and drain < * In addition, the finger portion 6 1 0a is electrically connected to the active region with at least one first contact window 2 50. Parallel, source The end of the finger part 5 1 0a and the drain connection part 6 1 0b maintain a distance S without contacting it. This distance S is equal to or greater than the design rule, "formed by the same mask" in the same plane. The minimum distance between adjacent conductive layers. Similarly: the end of the drain finger portion 6 1 0a also maintains the same distance S without contact with the source connection portion 5 1 0b. Please refer to the third figure (a), The figure shows the second layer 520 of the source pattern and the second layer 620 of the drain pattern at the same time. It is worth noting that the second layer 520 of the source pattern is not multi-finger like conventional techniques, and Is-rectangular, and has a first long edge 520a and a second long edge 520b > both are on opposite sides of the rectangle; similarly, the second layer 620 of the drain pattern is also a rectangle and has a first A long edge 620a and a second long edge 620b, both of which are located on opposite sides of the rectangle, and The two long edges 6 20b are adjacent to the second long edge 520b. The second long edge 520b of the second layer 520 of the source case and the second long edge 620b of the second layer 620 of the drain pattern maintain a distance S Without contact, the distance S is equal to or greater than the minimum distance between two adjacent conductive layers in the same plane (formed by the same light beam) in the design rule. Please refer to the third circle (b), the source of at least one layer The second layer 5 20 of the polar pattern is formed in the active area 50 as shown in the second circle (e) and the source map paper. The scale is in use_ 面 家 榇 准 (CNS) ΜΛΙ 格 (HOX297 mm) (Please read the notes on the back before filling out this page) .-4 Order y ·

^ In —II Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, 4 2 9 5 4 A? __ B7_ V. Description of Invention () on the first layer 510 of the case. Wherein, the first long edge 5 2 0 a of the second layer 520 of the source pattern is aligned with the “longest outer edge” of the source connecting wire 5 丨 0 b. The longest outer edge refers to the source connecting wire 5丨 0 b is the longer outer edge that is not connected to the finger portion 510a, and the second long edge 520b of the second layer 520 of the source pattern is located at about one and a half width of the active area 50 (as shown in the figure) T / 2). In other words, about half of the area (top half) of the active area 50 is covered by the second layer 520 of the source pattern, and this area is about 1772. Still referring to the third figure (1>), similarly, the first long edge 620a of the second layer 620 of the pole pattern is aligned with the 'longest outer edge' of the second layer 610 of the drain pattern described above. And, the second long edge 620b of the second layer 620 of the drain pattern is located at about one and a half width of the active region 50 (as shown at T / 2 in the figure). In other words, 'about half of the area (lower half) of this active area 50 is covered by the second layer 620 of the drain pattern, and this area is about Z772. Still referring to the third (b), it is worth noting that the second long edge 520b of the second layer 520 of the source pattern is kept at a distance from the second long edge 620b of the second layer 620 of the drain pattern. Contact * This distance S is equal to or greater than the minimum distance between two adjacent conductive layers in the same plane (formed by the same mask) in the design rule. In this embodiment, the width Γ of the active area 50 is about 80 am, and the minimum metal spacing is about 0.8 #m, which is about 100 to 1. Therefore, this minimum golden eyebrow spacing is compared to the active area 50. The width Γ is very small 'negligible'. In addition, with at least one second contact window {Please read the precautions on the back before filling this page) This paper size is based on the Chinese sample rate (CNS > from the specification (2 丨 OX297) 297 4429 5 4 A7 B7 V. Description of the invention 700), the second layer 520 of the source case and the first layer 5 of the source pattern 5 can form an electrical connection 11. Similarly, at least one second contact window 7〇〇 The first layer 620 of the polar pattern and the first layer 610 of the polar pattern can form an electrical connection. The following description will explain the layout area that can be saved by the layout structure of the present invention, please refer to the third (b ), And take the source pattern as an example. If the first layer 510 of the source pattern and the second layer 52 of the source pattern are known, the maximum current resistance is A (mA / ym) and B (mA / ym). ), The width of the second layer 520 of the source pattern is approximately i (jealousy + 7V2), and the width of the first layer 510 of the source pattern is approximately jealous from the second (b) diagram. When there is a large current I Flowing over it, the minimum line width 诛 of the case 500 can be calculated according to the following formulas (5) and (6): I = AW + B (fT, + r / 2) (5)!: ^ 丨i (please Wen read back & · the precautions to fill out this page) - Order W '

TB Y

A + B ⑹ Therefore, compared to the conventional technology, the width of the invention can be reduced as shown in the following formula (7) or (8): Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs» W-W '

A + B

f J_TB \ ~ Ύ A + B (7) 15

-II Medium gull used in this paper scale_Home beam ratio (CNS) Α4 specification < 2 丨 〇χ297 公 漦} 4429 5 4 A7 _B7_ V. Description of the invention () That is,

TB w (8)

A + B In addition, if it is known that the active region 50 of the multi-finger M OS element has a width Γ and a length L, then according to formula (7) or (8), the present invention can be compared with The layout area reduced by the conventional technique is calculated as shown in the following formula (9): (TR \ A-A '= L — =-] (9) where J is the layout area used by the conventional technique (as before (Described above), and is the layout area of the present invention. Therefore, using the layout structure of the present invention can indeed effectively reduce the required layout area, that is, the use of the present invention can effectively improve the integration degree of integrated circuits. The layout structure is not limited to two conductive layers, and is also suitable for using two or more conductive layers. In the second embodiment where the conductive layer is an η layer (η is two or more layers), the first layer of the source pattern As mentioned above, for the first (please read the notes on the back before filling out this page), the Ministry of Economic Affairs, Intellectual Property Bureau, Employees' Cooperative Cooperative Printed Sections of the Ministry of Economic Affairs, etc. The figure refers to the number of knots, the number of duplicates, and the connection. The electrode pattern is the source pattern. The source region of the polar domain layer is in contact with the window.-The moment of the shape of J1 is from the case where the source is layered and the η refers to the uniform pole. This case is the first. The case is completely complete with the same picture, and the paper size is 6 layers. _ National Standard (CNS) A4 specification (210 * 297 public *) •. 4429 b 4 A? B7 Ministry of Economic Affairs Printed by the Intellectual Property Bureau's Consumer Cooperatives. 5. Description of the Invention () The layout pattern of the second layer is the same as the first embodiment, so it will not be described again. Similarly, the first layer of the drain pattern is as described above. The multi-finger structure includes a plurality of finger portions and a connecting portion for connecting the plurality of finger portions. The card finger portion forms electrical properties with the active region through at least one contact window The second layer of the drain pattern, the third layer of the drain pattern ... the nth layer of the drain pattern are all rectangular and exactly the same. Because the layout pattern of the second layer of the drain pattern and The first embodiment is the same, so it will not be described in detail. Although the second layer of the source pattern and the second layer of the drain pattern partially overlap the active region in the present invention, using the layout structure of the present invention does not need to add additional process steps to isolate this. The second conductive layer and the active region, because after the active region is formed, an insulating layer t must be formed over the active region, and then a conductive layer is formed thereon. Therefore, this insulating layer can make the source pattern The second layer and the second layer of the drain pattern are isolated from the active area, without the need to add additional process steps. Second Embodiment However * The layout of the first embodiment of the Layout® design can save a lot of area, but if If the process is offset, the current collapse point at T / 2 is prone to burn the source pattern or the drain pattern. In more detail, yes (please read the precautions on the back before filling this page) This paper is commonly used in the paper "National Sample Rate (CNS > A4 Specification (2 丨 0X297 mm)) Poverty Alleviation for Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 4 429 5 4 A7 B7 V. Description of the invention () For the first embodiment shown in the third figure (b), the first layer 5 1 0 of the source pattern and the first layer of the drain pattern The t-segment portion of a layer of 6 10 can only bear half the current of each MOS transistor *, so it is easy to burn at T / 2 due to the critical current. For this reason, in the second embodiment of the present invention, The second layer 5 2 0 " of the source pattern shown in the first embodiment and the second layer 62 ΟM of the drain pattern are modified, and the modification will be "the second layer of the source pattern 5 2 0 " The second layer 620 of the drain pattern is changed from the original rectangle to: the second layer 720 of the source pattern as shown in the fourth figure (a) and the second layer of the drain pattern 820, in particular, the second layer 720 of the source pattern and the second layer 820 of the drain pattern have a jagged edge 720b and 820b, respectively, and the jagged shape The tip of the edge must cover at least half the length of the finger (T / 2). Taking the second layer 720 of the source pattern as an example, the tip of the jagged edge 7 2 0 b is located at the source. The polar finger 5 1 0 a " is greater than T / 2 "so as to cover half the length (172) of the source finger 5 1 Oa. Among them, the jagged edges 720b, 8 20b are Refers to the edge adjacent to the second layer 720 of the source pattern and the second layer 820 of the drain pattern. Except for the modification described above, the rest of the first embodiment is exactly the same as the rest of the second embodiment, and In one embodiment, the same drawing numbers as in the second embodiment also indicate the same elements. Therefore, when the source and electrode currents flow through the original collapse point, the collapse point is caused by the jagged edge 7 2 0 b. The tip part is covered, so the first layer 5 1 0 of the source pattern and the second layer 720 of the source pattern can be shared by current (please read the precautions on the back before filling this page) China's national rate (CNS) A4 grid (210X297): VP9 5 4 at __B7_ V. Description of the invention () Avoid burnout of the collapse point. Similarly, when the drain current flows through the original collapse point, the collapse point is covered by the tip portion of the jagged edge 8 2 0 b. One layer 610 and the second layer 8 2 0 of the drain pattern can avoid burnout of the collapse point by current sharing. It is worth noting that in the present invention, if the second layer of the source electrode and the drain electrode When the second layer of the ® case is more than one layer, the parallel arrangement of the jagged edges is not limited to the layer used in it, that is, the conductive layer with the jagged edges can be determined as needed. The above are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all other equivalent changes or modifications made without departing from the spirit disclosed by the present invention shall be included in the following Within the scope of patent application. (Please read the notes on the back before filling out this page) -s Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy

Claims (1)

4Α29 5 4 Α8 Β8 C8 D8 6. Application for Patent Scope Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1. A layout structure to improve the integration degree, including at least: the active area, the active area contains multiple gate areas, multiple A source region and a plurality of drain regions; a gate pattern located on the gate region; a source pattern * the source pattern further includes: a first layer of the source pattern, which is a multi-finger structure; A source finger portion and a source connection portion, one end of each of the shape portions is formed by the connection of the source connection portion, wherein the source finger portion is located at the source electrode On the region, the pole connecting part has a longest outer edge; at least one second layer of the source circle is formed on the first layer of the source and the second layer of the source pattern on the active region; and The first long edge and the second long edge are respectively located on opposite sides of the rectangle, wherein the first long edge of the source pattern layer is aligned with the longest outer edge of the source connecting wire. The second layer of the Source® case The second long edge is located approximately at the width of the active region. * The drain pattern further includes the first layer of the drain 00 case, which is a multi-finger structure including a plurality of drain fingers. And a drain connection part, one end of each of the drain finger parts forms an overall pattern by the connection of the drain connection part, wherein the drain finger part is located on the drain region, And the drain connection part has a longest outer edge: at least one second layer of the drain pattern formed on the drain pattern including a complex source finger as a whole and the source pattern is a moment and the second and This—half, please read it first- Note-S-Folding and ordering 20 paper sizes in use »Family sample rate (CNS> A4 * L grid (210X297mm) A8 B8 C8 D8 4420 5 4 AA99S A 々. On the first layer of the patent application range and the active area, the second layer of the drain pattern is rectangular and has a first long edge and a second long edge. The two long edges are located on opposite sides of the rectangle, respectively, where the The first long edge of the second layer of the pole pattern is aligned with the longest outer edge of the drain connection wire, and the second long edge of the second layer of the sum electrode is located at about one and a half width of the active area. . For the structure of the first scope of the patent application, the upper half of the active area is covered by the second layer of the source case. 3. For the structure of the first scope of the patent application, the above active area The lower half of the area is covered by the second layer of the aforementioned drain case. (Please read the M-Reading *-Note before filling out this page) Borrow as little as. Concluding p. Fepc-likeness refers to the fact that the electrode is in the source form, the upper part of the field, and the source structure of the structure is the same as the item window. 1 Touch the contact area. The knot-like phalanx pole electricity draws into the poles in the upper region of the shape, and the sum window RM * 1 0 on the wave structure of the knot. Please apply less to the first line from the first line -ί Economy The Intellectual Property Bureau of the Ministry of Intellectual Property Bureau printed the special issue to the end of the cooperation, please apply for borrowing * 0 layer electricity 6 into a layer of the first layer of the first range-the rare case of the second figure, the source of the pole The source touches the contact between the upper structure and the window. This paper uses the Chinese house dart rate (CNS) grid A4A (210X297 mm) 442954 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 CS D8. Patent scope 7. The structure according to item 1 of the patent scope, wherein the first layer of the drain pattern is electrically connected to the second layer of the drain pattern through at least one second contact window. 8-For the structure of item 1 of the scope of patent application, in which the longest outer edge of the source connection part refers to the longer outer edge of the source connection part that is not connected to the source finger part. The structure of item 1 of the patent scope, wherein the longest outer edge of the drain-connected portion refers to the longer outer edge of the source-connected portion that is not connected to the finger-shaped portion of the source. I 0. If the structure of item 1 of the patent scope, where the above-mentioned source finger portion is a long strip II. If the structure of item 1 of the patent scope, where the drain finger portion is a long strip shape. 1 2. The structure according to item 1 of the scope of patent application, wherein the longitudinal length of the source finger portion is greater than the width of the active region. 1 3 · If the structure of item 1 of the scope of patent application is adopted, the longitudinal length of the drain-finger portion is greater than the width of the active area. 1 4. The layout structure of item 1 in the scope of patent application, where the above source (please read the precautions on the back before filling out this page) 22 This paper is in use _ «Home Lemon Rate (0 Yang) 8 4 Xiege (2 丨 0 father 297 mm) 442954 A8 C8 D8 Printed by the Anti-Poverty Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The second long edge of the second layer of the patent application pattern and the second layer of the drain electrode pattern The second long edge is adjacent and maintains a distance without contact. The distance is equal to or greater than the minimum distance between two adjacent conductive layers on the same plane t in the design rule. 15. The layout structure according to item 14 of the scope of patent application, wherein the two adjacent conductive layers in the above-mentioned plane refer to the conductive layers formed by the same photomask. 1 6 · —A layout structure for increasing the integration degree, including at least: an active region, the active region including a plurality of gate regions, a plurality of source regions, and a plurality of drain regions; a gate pattern located on the gate region ; Source® case, the source pattern further includes: the first layer of the source pattern is a multi-finger structure, including a plurality of source finger portions and a source connection portion, each of the source One end of the polar finger portion forms a whole pattern by the connection of the source connection portion, wherein the source finger portion is located on the source region, and the source connection portion has a longest outer edge. ; At least one second layer of the source pattern is formed on the first layer of the source pattern and the active area, the second layer of the source pattern has a long edge and a jagged edge, the long edge and The jagged edges are respectively located on opposite sides, wherein the long edge of the second layer of the source pattern is aligned with the longest outer edge of the source connecting wire, and the jagged edge of the second layer of the source pattern covers the Longitudinal of source finger The _half of the length: 23 This paper size is used in the attention of β family lemon rate (CNS > A4 size (210 X 297 mm) (please read the precautions before filling in this search) Order ♦ " ~ (/ * m 4 429 5 4 A8 B8 C8 D8 1 patent application scope of the drain electrode, the drain pattern further includes: the first layer of the drain pattern is a multi-finger structure, including a plurality of drain fingers And a drain connection portion, one end of each of the drain finger portions forms a whole picture by the connection of the drain connection portion, and the drain finger portion is located at the On the drain region, and the drain connection portion has a longest outer edge; at least one second layer of the drain pattern is formed on the first layer of the drain pattern and on the active region, the first of the drain pattern The second layer has a long edge and a jagged edge, and the long edge and the jagged edge are respectively located on opposite sides of the rectangle, wherein the longest outer edge of the second layer of the drain pattern that is long and the drain connecting wire is aligned And the jagged edge of the drain pattern covers the drain finger Half of the longitudinal length; ^ and, FIG jagged edges and drain of the second layer of the source pattern of the serrated edge of the second layer adjacent lines. (Please read the precautions for the back of the island before you fill out this page.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 17. If you apply for the structure of item 16 of the patent scope, the upper area of the above active area is covered by the above. Covered by the second floor of the Yuanyuan case. 1 8. Structure according to item 16 of the scope of patent application, in which the area of the lower half of the above active area is covered by the second layer of the aforementioned drain case. I 9. Structure according to item 16 of the scope of patent application Wherein, the source finger portion is electrically connected to the source region through at least one first contact window. 0 24 ^ Paper size: tB · Family sample rate (CNS > A4 rule "Grid (210X297 mm) ） Line 4429 5 4 A7 B7 printed by the Anti-Poverty Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention () 2 0, such as the structure of the 16th scope of the patent application. The at least one first contact window is electrically connected to the drain region. 2 1. The structure according to item 16 of the patent application scope, wherein the first layer of the source pattern is connected to the above through at least one second contact window. The second layer of the source pattern forms an electrical connection. 2 2 · The structure of item 16 in the scope of the patent application, wherein the first layer of the drain pattern is connected to the first layer of the drain pattern through at least one second contact window. The two layers form an electrical connection. 2 3. The structure of item 丨 6, wherein the longest outer edge of the source connection part refers to the longer outer edge of the source connection part that is not connected to the finger part of the source. The structure, in which the longest outer edge of the non-polar connection part refers to the longer outer edge of the source connection part that is not connected to the finger part of the source. 2 5. The structure, in which the above-mentioned source finger portion is a long strip. 2 6. According to the structure of the patent application scope item 16, the above-mentioned drain electrode portion is a long strip. (Please read the back first. Note: Please fill in this page again.) 25 The standard of this paper is Chinese national standard (CNS > A4 size (210X297mm) 442954 A7 B7. 5. Description of invention () 2) The structure, wherein the longitudinal length of the source finger portion is greater than the width of the active region. 2 8. The structure of item 16 in the patent application scope, wherein the longitudinal length of the drain finger portion is greater than that of the active region. Width 2 9. Layout structure as in item 16 of the scope of patent application , Where the jagged edge of the second layer of the source pattern and the jagged edge of the second layer of the drain pattern maintain a gap without contact, the gap is equal to or greater than the design rule, two adjacent conductive in the same plane The minimum distance between the layers. 30. For the layout structure of item 29 in the scope of patent application, the two adjacent conductive layers in the same plane mentioned above refer to the conductive layer formed by the same mask. (Please read the precautions on the back first (Fill in this page) Order the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs, and print 26 copies of this paper standard. The country's rubbing rate (CNS) A4 * ttt · (210X297 public shame)