TW442822B - Ion implantation device with at least two ion sources - Google Patents

Abstract

The invention disclosed an ion implantation device used in semiconductor ion implantation process, comprising at least the following basic elements: a rotary disk; at least two ion sources for producing an ion beam, the at least two ion sources are fixed on the rotary disk with equal distances between adjacent ion sources; and an extractor for extracting the ion from the ion beam. The above mentioned at least two ion sources at least comprise: an ionization chamber having a conductor wall; a filament passing through the interior of the ionization chamber and protruding the conductor wall of the ionization chamber, in which an insulation measure is created between the filament and the conductive wall; and a support fixed on the rotary disk for positioning the ionization chamber.

Description

Five 'invention description (1) 5-1 Field of the invention: The present invention relates to an ion implantation device for a semiconductor process f, and more particularly to the structure of an ion source system in an ion implanter. 5-2 Background of the Invention: The main components of an ion implanter are an ion source, a mass analyzer or extractor, an acceleration region (acce 1 eratingc ο 1 u in η), Dimensional scanning system and wafer chamber. An ion source, as shown in the first figure, usually includes some basic components, a dissociation chamber (chamber) 100, a filament (filament) 10, and a support (SUpP〇): t) 102, the support 102 is Mounted on an immvable disk 103 and used to fix the position of the dissociation chamber 100; In addition, two wires 104 are respectively connected to both ends of the filament 101 and connected to a filament power supply (filament) power supply), these two wires 104 have been insulated to prevent contact with other conductors. The purpose of this ion source is to generate and maintain high-density ions in the dissociation chamber, so that the ions can be implanted into the target after being processed by other components of the ion implanter. The doped ionic impurities ^ imPurltieS) is an unionized gas ’and then passes through an opening.

Page 4 ¢ ^ 12822 V. Description of the Invention (2) 105, which is the gas source inlet, is introduced into the dissociation chamber 100. Hot electrons are released from the incandescent filament at ° C. 'Accelerated by the potential difference between the filament 1 〇1 and the dissociation chamber 100 Å, that is, the electric voltage (arc voltage) and the so-called electric field (field) to accelerate and dissociate An electromagnetic field in the chamber 100 causes this hot electron to run in a spiral shape to hit gas molecules, dissociating the gas molecules into ions. Under a fixed air dust (approximately 10-4-10-3 Torr) 'ionizatiori rate and fi 1 ament temperature, arc voltage and magnetic field in dissociation chamber 100 The intensity is relative. Next, the ions will pass through a gap 1 6 by the electric field and run out of the dissociation chamber 100. Now the extractor of the ion implanter is shown in the second figure. In the conventional ion implanter, The ion source system 107 only includes an ion source 108, and its iifetime is about seven days, and it is usually caused by a broken filament, and the ion source 108 may need to be replaced due to other factors. The ion implantation process must be stopped when the ion source 108 is replaced. This will interrupt the process and reduce production efficiency and yield in high-efficiency current and future semiconductor manufacturing processes47. Based on the above factors, a new ion source system (i οn s〇urce sy st em) must be developed to increase its lifetime (1 ifetime) and reduce the chance of production interruption and maintenance time, which can improve production efficiency and production volume. It will be of great help to the semiconductor industry now and in the future.

V. Description of the invention (3) 5-3 The purpose and summary of the invention. In the above background of the invention, the shortcomings of the ion source system of the ion implantation machine, the source of the carving system increases the life of the ion source system. In the future, the purpose of improving the ion implantation is to increase the efficiency of semiconductor production. According to the above-mentioned object, the present invention provides an ion source system of a source ion implanter. In one embodiment, there are two ions, at least two ion sources (such as three ion sources), two ions—with = system = including a rotation one… = two a sub-sources, a motor, a motor controller and a sensor Tester (SenSOr) and so on. The above at least two ion sources are used to generate an ion beam, which are fixed on a rotating disk, and all adjacent two ion sources have an equal distance; the motor is used to rotate the rotating disk. Use: The motor controller controls the operation of the motor; the sensor is used to detect the position of the rotating disk, and will send a signal (signa 1) to the motor controller. Furthermore, each ion source includes at least-dissociation to 'it has a conductor wall (c0ncjuct〇r walls);-filament (filament) support)' which passes through the dissociation chamber and is insulated from the conductor wall; and a seat (It is installed on a rotating dish and used to fix the dissociation chamber.

Page 6 442822 V. Description of the invention (4) The first diagram is a structural diagram of an ion source; the second diagram is a structural diagram of an ion source system and an extractor of a conventional ion implanter, and the third diagram is a A structure diagram of a three ion source and a rotating disk according to an embodiment of the invention; a fourth diagram is a top view showing a structure of a three ion source and a rotating disk according to an embodiment of the invention; and the fifth diagram is an embodiment of the present invention. Structure diagram of ion source system and extractor. Main symbols: 10 rotating disk 11 first ion source 12 second ion source 13 second ion source 14 dissociation chamber 15 filament 16 support 17 lead 18 open D (air source inlet) 19 gap 20 adjacent two ion sources Angle formed by the filament extension line 21 Specific ion source 22 Extractor

Explanation of the invention on page 7 (5) 23 Sensor 24 Motor 25 Coding ^ 26 Rotary shaft 100 Dissociation chamber 101 Filament 102 Stand 103 Rotating dish 104 Lead 105 Opening (air source inlet) 106 Gap 107 Ion source of traditional ion implanter System 108 Ion source 5-5 Detailed description of the invention: In one embodiment of the present invention, an ion implanter has at least two ion sources in its ion source system (three examples are taken as an example), which can generate one ion. The beam enters an extractor or mass analyzer. The components of this ion source system are described below. Referring to the third figure, the three ion sources are the first ion source 11, the second ion source 12 and the third ion source 13, which are fixed on a rotating disk.

442822 V. Description of Invention (6)) 1 Q. Each "sub-source is the same as before" Arc dissociation chamber 1 4. A filament 15 5. The chamber 14 has a conductor wall, and a gas to be dissociated (Gas) on the top thereof enters the gap 1 9 to allow ions to run The output gas is non-ionized gas, its pg; the filament (fi 1 ament) 1 5 passes through electricity and has insulation measures between the conductor wall and the end of the filament and is connected to the filament power supply, isolated from the same sector; the support 16 is used to Electricity 16 is fixed on the rotating disk 10. With reference to the fourth figure, this figure shows the top view of 10. 'This tri-ion source is used, and it can be seen from the figure that the ion source is in the same plane. In the embodiment where the center point intersects and the mother and the two are adjacent, the included angle is 120 degrees. As described in the "Background of the Invention", it includes an electric support 16 and two wires 17. Arc dissociation—The opening 18 is the gas source inlet, which is used to make the arc dissociation chamber 14 side of the arc dissociation chamber 14. The above-mentioned / off condition is controlled by the gas controller arc dissociation chamber 1 4 The conductor wall and the interior; the two wires 17 are the same as the filament 15 respectively, and they also have insulation measures and the outer arc dissociation chamber 14 is positioned, and the two ion sources of this support 1 1, 1 2, 1 3 and The rotating disk is generated-the distance of the ion beam (equal to the ion beam) is fixed to the extension line of the filament of the rotating disk 10, which is equal to the angle formed by the rotating disk 10, which is true. —Sensor Refer to the fifth figure 'When the rotating disk 10 is turned to a specific position, the fixed ion source 21 will be aligned with the entrance sub-source 21 of the extractor 22 as the provider of the ion beam' and the emitted 5 In the extractor 22, and then through other subsequent machine units (factory scanning system, wafer chamber, etc.) to implant = rod = medium 'one of the special' this specific ion beam will enter the acceleration zone,

The signal should be transferred to a signal (the signal reported by the motor 2 4 is precisely extended and the rotation system computer should be enabled and the arc transmission motor should be used for its feedback disc 1 0 can rotate the shaft 2 6 directly control the signal to determine when the body The controller 25 will be used to mention the fifth, the invention description (7) (sens 0r) 2 3 is used to detect the gap between the specific position of 1J, signa 1) to the gap known to the motor controller, and then should be given through a series of Rotate the disc 10 to a specific position. This motor 2 4 is connected to the center of the rotating disc 10 and the rotation of the disc 10 is performed. Furthermore, this (system computer), the specific ion source 21, that is, the basis for controlling the "on" of the power of the dissociation chamber, the direction of rotation and the speed of 24, and so on. The actual position of the rotating disc 10 and then, the sensor 2 3 will send out 'This motor controller will control according to the encoder (enc ode) 2 5 — the amount, in order to make this rotation include a rotating shaft 26, this Therefore, the motor 24 can send out the motor 24 so that the computer of this system can determine its filament power and gas "off" status; the coding information is given to the specific release of the three controllers in the following three figures. And the electric signal to the position of the motor source 10; the position of the signal is the first ion source 21 computer arc dissociation controller; the turntable 10 motor control position sub-source is the original ion but Because the filament is broken or the first ion chamber power is turned off; then, during the period when the second off-motor controller will start the f motion, the f sensor is sensed to make the difference L of the motor control. The process is carried out with the filament of other factors of the supplier. The system electron source replaces the motor 24, and the device 23 will not break the encoder 25. It is assumed that the power supply and gas must be stopped in the first, that is, the fifth picture. The Brain Control sends a message Originally, the first ion was used to turn the rotating disk to cut off the actual detected disk 10 and the motor 24 was operated.

^ 42822 V. Description of the invention (8) Transfer the funds sfl to this controller so as to make precise feedback control on the motor 24. When the rotating disc 10 is accurately turned to position, the motor controller stops the motor 24 And tell the system computer. At this time, the second ion has been turned into position and becomes the specific ion source 2 in the fifth figure, and has been aligned with the entrance of the extractor 22 as the ion beam provider. Then, the system computer will turn on the second ion The source's filament power supply, gas controller, and arc dissociation chamber power supply enable the normal operation of the ion implantation process. The present invention does reduce the replacement of the actuating system very quickly, and the life time of the actual ion source system is an ion implanter, which can shorten the duration of the ion source and increase the production efficiency. There are three ion sources in the motor embodiment. It can be known that its single ion source is about three times. For its maintenance or repair time, the process u described above is only the preferred embodiment of the present invention and e = the patent application for the invention. Scope 4 Other equivalent changes or modifications that do not depart from this: God should be included in the scope of patents. Application of Γ

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Claims (1)

"2 822__ VI. Patent application scope 1. An ion implanter including at least: a rotating disk; at least two ion sources for generating an ion beam, the at least two ion sources are fixed on the rotating disk, and All the adjacent two ion sources are spaced equally; and-an extractor for extracting ions of the ion beam. 2. The ion implanter according to item 1 of the patent application scope, wherein the at least two ion sources above include at least : A dissociation chamber, which has a conductor wall;-a filament, which passes through the interior of the dissociation chamber and out of the conductor wall of the dissociation chamber, with insulation measures between the filament and the conductor wall; and-a support It is fixed on the rotating dish and is used to locate the dissociation chamber. 3. For the ion implanter of the second item of the patent application, the dissociation chamber includes at least an arc dissociation chamber. Page 12 ^ 42822 6. The scope of patent application is fixed on the rotating disk, and all adjacent two ion sources are equally spaced; a rotating device for rotating the rotating disk; a controller for controlling the rotating disk A rotating device; and a sensor for detecting a gap between a real position of the rotating disk and a specific position, and sending a signal to the controller. 6. The ion source system according to item 5 of the patent application, wherein each of the above ion sources includes at least: a dissociation chamber having a conductor wall; a filament passing through the interior of the dissociation chamber and out of the dissociation chamber. Outside the conductor wall of the chamber, there are insulation measures between the filament and the conductor wall; and a seat fixed on the rotating dish is used to locate the dissociation chamber. 7. The ion source system according to item 6 of the patent application, wherein the above-mentioned dissociation chamber includes at least an arc dissociation chamber. Page 13 442822 VI. Patent application scope 10. If the ion source system of item 9 of the patent application scope, the above-mentioned motor includes at least a rotating shaft which extends and is connected to the center of the rotating disk. 1 1. If the ion source system of item 5 of the patent application scope further includes an encoder, the encoder can transmit the status information of the rotary device to the controller to facilitate the feedback control of the controller. Page 14