TW442317B - High flow metal membrane gas filter - Google Patents
High flow metal membrane gas filter Download PDFInfo
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- TW442317B TW442317B TW088117140A TW88117140A TW442317B TW 442317 B TW442317 B TW 442317B TW 088117140 A TW088117140 A TW 088117140A TW 88117140 A TW88117140 A TW 88117140A TW 442317 B TW442317 B TW 442317B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 title claims abstract description 31
- 239000012528 membrane Substances 0.000 title claims description 4
- 238000001914 filtration Methods 0.000 claims abstract description 47
- 238000000034 method Methods 0.000 claims abstract description 11
- 239000002245 particle Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 239000012530 fluid Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 239000000047 product Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000000788 chromium alloy Substances 0.000 claims description 3
- 239000000835 fiber Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 241000219823 Medicago Species 0.000 claims 1
- 235000017587 Medicago sativa ssp. sativa Nutrition 0.000 claims 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims 1
- 238000010951 particle size reduction Methods 0.000 claims 1
- 239000012466 permeate Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 16
- 238000005245 sintering Methods 0.000 description 12
- 238000013461 design Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- 102100021407 ATP-dependent RNA helicase DDX18 Human genes 0.000 description 1
- 101001041703 Homo sapiens ATP-dependent RNA helicase DDX18 Proteins 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 Inco 255 powder) Chemical compound 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 238000005374 membrane filtration Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/0002—Casings; Housings; Frame constructions
- B01D46/0012—In-line filters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/10—Particle separators, e.g. dust precipitators, using filter plates, sheets or pads having plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/54—Particle separators, e.g. dust precipitators, using ultra-fine filter sheets or diaphragms
- B01D46/543—Particle separators, e.g. dust precipitators, using ultra-fine filter sheets or diaphragms using membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D46/00—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours
- B01D46/56—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with multiple filtering elements, characterised by their mutual disposition
- B01D46/58—Filters or filtering processes specially modified for separating dispersed particles from gases or vapours with multiple filtering elements, characterised by their mutual disposition connected in parallel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D67/00—Processes specially adapted for manufacturing semi-permeable membranes for separation processes or apparatus
- B01D67/0039—Inorganic membrane manufacture
- B01D67/0041—Inorganic membrane manufacture by agglomeration of particles in the dry state
- B01D67/00411—Inorganic membrane manufacture by agglomeration of particles in the dry state by sintering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0221—Group 4 or 5 metals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0223—Group 8, 9 or 10 metals
- B01D71/02231—Palladium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D71/00—Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
- B01D71/02—Inorganic material
- B01D71/022—Metals
- B01D71/0223—Group 8, 9 or 10 metals
- B01D71/02232—Nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2325/00—Details relating to properties of membranes
- B01D2325/24—Mechanical properties, e.g. strength
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Filtering Materials (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
- Filtering Of Dispersed Particles In Gases (AREA)
Abstract
Description
4423 1 7 —__ 五、發明說明（1) 本發明係關於以金屬薄膜為基礎、用於高流量應用之氣 體過濾裝置。詳言之’本發明係關於以金屬薄膜為基礎、 用於高流量應用、且體積極小之氣體過濾裝置。 發明背景 半導體之製造係受制於純度之限制。在製造半導體時所 使用之多種構件之化學氣相沉積過程中，一關鍵點即在於 不可有任何微粒雜質存在。一細小微粒即可破壞一整片石夕 晶圓，因而造成其最終產品之獲利損失。為此已發展出一 完整之產業，該產業係關於在半導體產品之形成過程中， 過濾有可能與半導體產品接觸之氣體。 整個輸送系統均經妥慎設計，以便將氣體供應所造成之 污染降至最低。該等氣體包括矽烧、三氫化砷、鹽酸、及 膦。系統所用構件之設計均致力於減少微粒脫落、除氣、 及其他由構件本身所造成之污染。 微粒過濾裝置即為該系統之一重要構件β此一過濾裝置 可確保微粒無法到達工件。通常，此種過濾裝置一直要到 氣體成份即將輸送至工件前才會加以設置，因而稱為「使 用點」C po i n t 0 f υ se )過濾裝置。此種過濾裝置必須效率 高而體積小，基本上係由有機薄膜、陶瓷薄臈、或燒結之 金屬纖維（或微粒）製成《可參見美國專利第5，1 1 4，4 4 7 號、及美國專利第5, 487 ,771號。 此種使用點」過滤裝置幾乎可去除所有微粒污染物， 評等時係以其對數減少值（LRV)為依據。對數減少值至少 應為6，方屬可接受之範圍，最好至少為9(效率為gg. g9994423 1 7 —__ 5. Description of the invention (1) The present invention relates to a gas filter device based on a metal thin film for high flow applications. More specifically, the present invention relates to a gas filter device based on a metal thin film, which is used for high flow applications and has a small volume. BACKGROUND OF THE INVENTION Semiconductor manufacturing is limited by purity. A key point in the chemical vapor deposition of various components used in the manufacture of semiconductors is that no particulate impurities should be present. A tiny particle can destroy an entire Shi Xi wafer, thus causing a loss of profit on its final product. To this end, a complete industry has been developed. This industry is concerned with filtering gases that may come into contact with semiconductor products during the formation of semiconductor products. The entire delivery system is carefully designed to minimize contamination from the gas supply. These gases include silicon fired, arsenic, hydrochloric acid, and phosphine. The components used in the system are designed to reduce particle shedding, outgassing, and other pollution caused by the components themselves. Particle filter is an important component of the system. Β This filter device can ensure that particles cannot reach the workpiece. Generally, such a filtering device is not installed until the gas component is delivered to the workpiece, so it is called a "point of use" C po i n t 0 f υ se) filtering device. Such a filtering device must be highly efficient and small in size. It is basically made of organic thin films, thin ceramic thin layers, or sintered metal fibers (or fine particles). And U.S. Patent No. 5,487,771. This “point-of-use” filter device can remove almost all particulate pollutants, and the rating is based on its log reduction value (LRV). The log reduction value should be at least 6, which is an acceptable range, preferably at least 9 (efficiency is gg. G999
第5頁 4423 1 7 五、發明說明（2) 至99.9999999)。該種過濾裝置在最小流量時可達上列數 值’而所謂最小流量基本上約為一標準公升/分（SLPM)呈 75 SLPM 。 亦有在「使用點」前所使用之過濾裝置。基本上，此種 過濾裝置係用於分送系統中之高流量應用。此處之流量範 圍為150至25, 000 SLPM。由於流量較大，因此，此種過濾 裝置基本上極不同於「使用點」過濾裝置。一般而言，此 種過濾裝置係以燒結金屬微粒製成之極長管。舉例而言， 有一此種過遽裂置其長度為36英对（91.44公分），外徑約 為2至4英吋（5至10.1公分）^此種過濾裝置之薄膜基本上 較為堅固’其孔隙度基本上較低。此種過濾裝置亦可改由 —系列（基本上為3支）相互疊套之管所構成，以便能以較 短之長度〔9至12英吋’亦即22. 86至30.48公分）提供相同 之過濾、面積。該種薄膜由於須承受高流量，因此必須具有 上述之堅固性及長度。 如美國專利第5，1 1 4, 4 4 7號所說明之圓盤設計之一例即 類似於「使用點」過濾裝置。根據該項專利，此一設計所 適用之流量可達1，400 SLPM。該單元之長度約為2英呎（60 公分），直徑4至5英吋（1 0至1 2. 5公分）。該項專利中雖未 說明根據該設計可用於較高流量之過濾裝置，但根據該項 專利之說明可作以下之推論：用於較高流量之過濾裝置其 體積可能較大，其所使用之過濾材料量亦明顯較大’如此 方能獲致低壓力值、及所需之過濾效率。目前所需實為一 高流量金屬薄膜氣體過濾裝置’其體積小，在1 5 0至Page 5 4423 1 7 V. Description of the invention (2) to 99.9999999). This kind of filtering device can reach the above-mentioned value at the minimum flow rate. The so-called minimum flow rate is basically about 75 SLPM at a standard liter / minute (SLPM). There are also filtering devices used before the "point of use". Basically, such filters are used in high-flow applications in distribution systems. The flow range here is 150 to 25,000 SLPM. Due to the large flow rate, this type of filtering device is basically very different from a “point of use” filtering device. Generally, such a filtering device is an extremely long tube made of sintered metal particles. For example, there is such a crack that has a length of 36 inches (91.44 cm) and an outer diameter of about 2 to 4 inches (5 to 10.1 cm). The membrane of this filter device is basically strong. Porosity is basically low. This filtering device can also be replaced by a series of (basically 3) tubes that overlap each other so as to provide the same length in a shorter length (9 to 12 inches', that is, 22.86 to 30.48 cm). Filter, area. This type of film must have the above-mentioned robustness and length because it must withstand high flow rates. An example of a disc design as described in U.S. Patent No. 5,11,4,4,7 is similar to a "point of use" filter device. According to the patent, the flow rate applicable to this design can reach 1,400 SLPM. The unit is approximately 2 feet (60 cm) long and 4 to 5 inches (10 to 12.5 cm) in diameter. Although the patent does not indicate that the filter device can be used for higher flow rates according to the design, the following inference can be made according to the description of the patent: The filter device used for higher flow rates may have a larger volume and the The amount of filter material is also significantly larger, so as to achieve low pressure values and the required filtration efficiency. What is currently needed is a high-flow metal film gas filter device ’, which has a small volume, ranging from 150 to
442317 五、發明說明（3) 2 5，0 0 0 SLPM之氣體流量下所提供之微粒對數減少值至少 為6，最好為9。此即本發明所提供之裝置。 發明總結 本發明包括一高孔隙度之高流量過濾裝置。其金屬薄膜 之孔隙度至少為百分之35，最好為百分之55至百分之80。 該過濾裝置製成後之體積小，類似於若干「使用點」過濾 裝置；其對數減少值至少為6 ;且可在高達2 5, 0 0 0 SLPM之 氣體流量下運作。 圖示之簡單說明 圖1為本發明第一具體實例之剖面圖。 圖2為本發明第二具體實例之剖面圖。 圖3為圖2所示具體實例其歧管之頂視剖面圖。 圖4為圖2所示具體實例其歧管之第二設計之頂視剖面 圖。 圖5為本發明第三具體實例之剖面圖。 本發明之詳細說明 本發明提供一高效率、體積小、高孔隙度之金屬薄膜過 濾裝置，可於高氣體流量下使用。該過濾裝置係一極適用 於氣體應用之高流量過濾裝置，例如可應用於半導體、光 纖、及其他「空間」十分寶貴之相關產業。 圖1為本發明之一具體實例。該過濾單元包括一外殼1， 其具有一入口2、一出口3、及位於入口 2與出口3之間之一 殼4。如圖1所示，入口 2係安裝於一末端5，出口 3則係安 裝於與末端5相反之一末端6。此係典型「直列式」裝置之442317 V. Description of the invention (3) The logarithm reduction value of the particles provided under the gas flow rate of 25.0 0 0 SLPM is at least 6, preferably 9. This is the device provided by the present invention. SUMMARY OF THE INVENTION The present invention includes a high porosity, high flow filtration device. The metal film has a porosity of at least 35 percent, preferably 55 to 80 percent. The volume of the filter device is small, similar to several "use-point" filter devices; its logarithmic reduction is at least 6; and it can operate at a gas flow rate of up to 25,000 SLPM. Brief Description of the Drawings Fig. 1 is a sectional view of a first specific example of the present invention. Fig. 2 is a sectional view of a second specific example of the present invention. FIG. 3 is a top sectional view of a manifold of the specific example shown in FIG. 2. Fig. 4 is a top cross-sectional view of a second design of the manifold of the embodiment shown in Fig. 2; Fig. 5 is a sectional view of a third embodiment of the present invention. Detailed description of the present invention The present invention provides a high-efficiency, small-sized, high-porosity metal thin-film filter device that can be used at high gas flow rates. The filter device is a high-flow filter device that is extremely suitable for gas applications, such as semiconductors, fiber optics, and other related industries where space is very valuable. FIG. 1 is a specific example of the present invention. The filter unit includes a casing 1 having an inlet 2, an outlet 3, and a casing 4 located between the inlet 2 and the outlet 3. As shown in Fig. 1, the inlet 2 is installed at one end 5 and the outlet 3 is installed at one end 6 opposite to the end 5. This is one of the typical "in-line" devices
442 3 1 7 五、發明說明（4) 作法。亦可將入口與出口改設於外殼之同一端。此係用於 模組式設計、及非直列式或直角形之構造（未圖示）。 殼4内裝有一由孔隙燒結金屬所形成之過濾裝置7。在此 具體實例中，過濾裝置7係由一系列相互熔接之燒結孔隙 金屬圓盤所構成。最靠近入口 2之圓盤8A具有一完整之連 續表面。其他圓盤8B則具有一中央孔9，可供過濾後之流 體穿過，直達出口 3。 過濾裝置7在該外殼内之固定方式可在其與外殼1或入口 2或出口 3之間形成一流體密封。至於以何種方式密封則非 本發明之關鍵。在此具體實例中，此一密封係形成於外殼 1之相反末端6，其作法係將該系列圓盤中之最後一片圓盤 8B熔接於外殼1其内表面上之一耳10。此外，在此具體實 例中，一彈簧力金屬環1 1係安裝於鄰近該過濾裝置其靠近 入口 2之一端。環1 1係用於將該系列圓盤安裝並定位於該 外殼内，以利流體在過濾裝置7與外殼1之間流動，如此方 能確保所有圓盤均參與該流體之過濾工作。 另一作法為：該出口可包括一桿1 2 (未圖示），其可經由 熔接、螺紋、或其他類似之已知方式，固定於過濾裝置 7。在另一具體實例中，最下方圓盤之尺寸可對應於該外 殼之内部尺寸，並藉由熔接、彈簧固定器、金屬黏著 劑.* •等方式將該圓盤密封於該外殼。圖2顯示本發明 之第二具體實例。在此具體實例中，過濾裝置2 0係由一系 列安裝於一歧管22之管21所構成。該歧管可安裝於外殼23 之内表面，以便在外殼2 3與歧管2 2之間形成一流體密封442 3 1 7 V. Description of Invention (4) Practice. It is also possible to change the inlet and outlet at the same end of the housing. This is for modular design and non-in-line or rectangular structures (not shown). The casing 4 contains a filtering device 7 formed of sintered metal with pores. In this specific example, the filtering device 7 is composed of a series of sintered porous metal discs welded to each other. The disc 8A closest to the entrance 2 has a complete continuous surface. The other discs 8B have a central hole 9 through which the filtered fluid can pass and reach the outlet 3 directly. The manner in which the filter device 7 is fixed in the housing can form a fluid-tight seal between it and the housing 1 or the inlet 2 or outlet 3. The manner in which it is sealed is not critical to the invention. In this specific example, this seal is formed at the opposite end 6 of the casing 1, and the method is to weld the last disc 8B in the series of discs to an ear 10 on the inner surface of the casing 1. In addition, in this specific example, a spring-force metal ring 11 is installed near one end of the filter device near the inlet 2. The ring 1 1 is used to install and position the series of discs in the casing to facilitate the flow of fluid between the filtering device 7 and the casing 1 so as to ensure that all discs participate in the filtration of the fluid. Alternatively, the outlet may include a rod 12 (not shown), which may be fixed to the filtering device 7 by welding, screwing, or other similarly known methods. In another specific example, the size of the lowermost disc may correspond to the internal dimensions of the shell, and the disc may be sealed to the shell by means of welding, spring retainer, metal adhesive, etc. *. Fig. 2 shows a second specific example of the present invention. In this specific example, the filtering device 20 is constituted by a series of pipes 21 mounted on a manifold 22. The manifold can be mounted on the inner surface of the casing 23 to form a fluid seal between the casing 23 and the manifold 22
442317 五、發明說明（5) (如此具體實例所示）；抑或安裝於一附著於出口 2 5之桿 2 4 (未圖示），以便使其中一端、桿2 4與歧管2 2間之連接能 與另一端之出口 25形成過濾裝置元件2 1與出口 2 5間之流體 密封=兩種構造無論採用任何一種，氣體均係由入口 26進 入外殼23，穿過過遽裝置20，再由出口 25排出。圖令亦可 見該等管係由應.柱形撓結料所構成，並具有—末端26(遠 離該歧管之一端）’且由端帽2 7加以密封，該端帽可以^ 種方式固定’例如經由熔接、或成為燒結過程之一部 份...等。另一作法為（此亦此項技術中所熟知之作 法）：由孔隙燒結金屬所構成之端帽可在燒結過程令來 管之一部份。此一具體實例在圖中具有—系列共5支管， 以同心之^方式環繞該歧管排列。可視需要使用多於5 少於5支管，以達所需之流況及過濾 ^ ^ 之唯-限制為任一尺寸之歧管其所能安裝：於所二？ 作交錯之排列，以便裝nd 環繞該歧管 ^ ^ ^ rs iu m 更裝更多& 。舉例而言，圖3為圖2中 歧官之頂視圖。圖4 piI χ λ,, sl . ,. r 夕其M栌妯π 顯排列方式之頂視圖，其中 B 3丨。視情況需要，可將一系列之管熔接忐 體，以形成更長之答且αβ矿力ι官落接成一 管。管長應能搭配管數及：二改：：一一支長度較長之 過渡特性。基本1官；vv以達所需之流況及 分），最好約為3英吋Γ7 ”八\、川·54至25.4公 、τ(7·62公分）至7央p寸，若約 吋⑴.6至15. 24公分）目，丨争灼為4至6夹 仆，美太上可π 刀）貝1更佳。官之直徑可有極大之變 土 欠約0.25至3英吋（外徑）（0635至7.62公442317 V. Description of the invention (5) (as shown in this specific example); or installed on a rod 2 4 (not shown) attached to the outlet 2 5 so that one end, the rod 24 and the manifold 2 2 The connection can form a fluid-tight seal between the filter device element 2 1 and the outlet 25 with the outlet 25 on the other end = no matter which one is used, the gas enters the housing 23 from the inlet 26, passes through the thorium device 20, and then The outlet 25 is discharged. It can also be seen in the drawing that these piping systems are composed of a column-shaped flexible material and have-the end 26 (away from one end of the manifold) 'and sealed by an end cap 27, which can be fixed in various ways. 'For example, by welding or becoming part of the sintering process ... etc. Another method (also known in the art): the end cap made of porous sintered metal can be part of the tube during the sintering process. This specific example has a series of 5 tubes in the figure, which are arranged around the manifold in a concentric manner. You can use more than 5 and less than 5 pipes as required to achieve the required flow conditions and filtering. ^ ^ The only restriction is that a manifold of any size can be installed: in the second? Arrange in a staggered manner so that nd surrounds the manifold ^ ^ ^ rs iu m more equipment &. For example, Figure 3 is a top view of the disagreement in Figure 2. Fig. 4. Top view of piI χ λ ,, sl.,. R and its M 栌 妯 π display arrangement, where B 3 丨. Depending on the situation, a series of tubes can be welded to form a longer answer and the αβ mineral power can be connected into a tube. The length of the tube should be able to match the number of tubes and: two changes: one to a longer length of transition characteristics. Basic 1 officer; vv to achieve the required flow conditions and minutes), preferably about 3 inches Γ7 ”Ya \, Chuan · 54 to 25.4 cm, τ (7.62 cm) to 7 central p inches, if about Inch ⑴.6 to 15.24 cm) mesh, 丨 scoring for 4 to 6 clips, the United States can be π knife) shell 1 is better. The diameter of the official can vary greatly and owes about 0.25 to 3 inches (Outer diameter) (0635 to 7.62 male
第9頁 3 1 7____ 五 '發明說明~ ^ --—------- 管壁厚度則從約〇, 0 62 5至0_ 3 7 5英忖（〇. 159至〇 9 52 5 么为）。管壁厚度可根據管所適用之流況而有所變化，壓 力降幅及過濾材料之孔隙度則可視需要或容許值而 化。 顯示本發明之另—具體實例，其基本上為圖i所示具 ，實=之修正，其所包括之圓盤較少，因此特別適用於高 流量範圍内之較低流量，亦即15〇至3, 〇〇〇 SLpM。由於元 件較少，因此圖1所示之環並非必要’但需要時亦可使 用。 雖然圖示之具體實例係採用螺紋型接頭，但亦可使用明 瞭此項技藝之人士所熟知之其他接頭，包括（但不限於）〇 形娘、壓縮密封、或業界稱為對頭式熔接管之簡易無螺紋 端。 本發明係根據所需之類型而選用適當數目之元件（圓盤 數或管數），並選用適當之流量值及壓力降幅^本發明可 插入氣體流中，使氣體流經該裝置，以去除該氣體流中之 微粒。 本發明之過濾裝置元件（無論其形式為圓盤或管）最好係 由大致均質之孔隙燒結金屬材料構成。該材料可為極細之 微粒金屬，或最好為樹枝狀之金屬粉末（可見於美國專利 第5,487，Ή1號）。所選用之金屬可包括不銹鋼（例如Grade 316)、鎳（例如Inco 255粉末）、鎳合金（例如Has1;ell〇y C- 2 2 )、絡、鉻合金或混合物、鈦、鈀、或其他類似之金 屬。Page 9 3 1 7____ Five 'Description of the Invention ~ ^ ---------- The thickness of the tube wall is from about 0, 0 62 5 to 0_ 3 7 5 Ying 忖 (.159 to 〇 52 52 5? for). The thickness of the pipe wall can be changed according to the applicable flow conditions of the pipe. The pressure drop and the porosity of the filter material can be changed according to the needs or allowable values. Shows another-specific example of the present invention, which is basically the one shown in Figure i, which is a correction, and it includes fewer discs, so it is particularly suitable for lower flows in the high flow range, which is 15. To 3,000 SLpM. Since there are fewer components, the loop shown in Fig. 1 is not necessary 'but can also be used when needed. Although the specific example shown in the figure is a threaded joint, other joints known to those skilled in the art can also be used, including (but not limited to) O-rings, compression seals, or those known in the industry as counter-type welded pipes. Simple unthreaded end. The present invention selects an appropriate number of components (the number of discs or tubes) according to the required type, and selects an appropriate flow value and pressure drop. ^ The present invention can be inserted into a gas flow to allow gas to flow through the device to remove Particles in the gas stream. The filter device element (whether in the form of a disk or a tube) of the present invention is preferably composed of a substantially homogeneous porous sintered metal material. The material may be a very fine particulate metal, or preferably a dendritic metal powder (see U.S. Patent No. 5,487, Ή1). The metal chosen may include stainless steel (such as Grade 316), nickel (such as Inco 255 powder), nickel alloys (such as Has1; elloy C- 2 2), complexes, chromium alloys or mixtures, titanium, palladium, or other similar Of metal.
第10頁 442 3 彳 7 i、,务明說明 （7) 用以製造過濾元件之方法係此項技藝中眾所周知之方 法，舉例而言，可見於美國專利第5，1 14, 557號及美國專 利第5，4 8 7，7 7 1號’該兩項專利之全文以挺及之方式併入 本文。基本上，過濾元件在成形時採乾、濕狀態均可，黏 結劑之使用與否亦同。最好在成形時採乾燥狀愁’且不使 用黏結劑，並使用如美國專利第5 ’ 4 8 7，7 71號所說明之氣 流成網技術。過濾元件之形狀基本上係以壓製之方式製成 所需之形狀，其以壓縮形式進行燒結時可裝於一模具内’ 若其形狀穩定，亦可不使用模具。過據元件基本上係於氫 氣中進行燒結，燒結之溫度及時間均足以提供形狀穩定之 元件。燒結之程度最好能降至最低，如此將可產生有助於 提高流量及過濾效率之高孔隙度結構。鎳之基本燒結溫度 約為攝氏500至1，000度，最好約為攝氏650至750度。不鱗 鋼、鎳合金、鉻、及鈦之燒結溫度較高，約為攝氏9〇〇至 1，400 度。 燒結之時間係根據溫度、及燒結成品所需之孔隙度及強 度而有所變化。基本上’燒結時間約為3至20分鐘。就錄 而言，其於攝氏約50 0-7 5 0度時之燒結時間最好約為5至1〇 分鐘。 過濾效率之量測係採用「用於氣體應用之超高效率薄膜 過濾裝置之特性」（魯博（Ru bo w )等人著，「環境科學期' 刊」，第31冊，第26至30頁，1 9 88年5月）此一文章^所％ 明之方法。在此試驗中’過遽裝置係於一或多種測試條件 下進行測試’並於該等條件下’針對該過濾裝置所適用之Page 10 442 3 彳 7 i., Note (7) The method used to manufacture the filter element is a method well known in the art. For example, it can be found in US Patent No. 5,1 14, 557 and the United States Patent Nos. 5, 4 8 7, 7 7 1 'The two patents are incorporated herein in their entirety by reference. Basically, the filter element can be used in the dry or wet state during molding, and the same applies to the use of adhesives. It is preferable to use dry worries 'during molding without using an adhesive, and use the air-laying technique as described in U.S. Patent No. 5' 4 8 7, 7 71. The shape of the filter element is basically made into a desired shape by pressing, and it can be installed in a mold when it is sintered in a compressed form. 'If the shape is stable, the mold may not be used. Passed components are basically sintered in hydrogen gas, and the temperature and time for sintering are sufficient to provide shape-stable components. The degree of sintering is preferably minimized, as this will result in a high porosity structure that will help increase flow and filtration efficiency. The basic sintering temperature of nickel is about 500 to 1,000 degrees Celsius, preferably about 650 to 750 degrees Celsius. Non-scale steels, nickel alloys, chromium, and titanium have higher sintering temperatures, which range from about 900 to 1,400 degrees Celsius. The sintering time varies depending on the temperature, and the porosity and strength required for sintering the finished product. Basically, the sintering time is about 3 to 20 minutes. In terms of recording, the sintering time at about 50 to 75 degrees Celsius is preferably about 5 to 10 minutes. The measurement of filtration efficiency is based on the "characteristics of ultra-high efficiency membrane filtration devices for gas applications" (Rubo et al., "Environmental Science Periodical", Vol. 31, Nos. 26-30 P. 19 May 1988) This article explains the method. In this test, the 'passing device is tested under one or more test conditions' and under these conditions' is applicable to the filter device
第11頁 442317 五、發明說明（8) 最具穿透性之微粒尺寸進行測試 就本發明而言’在以最 具穿透性之微粒尺寸進行測試時，過濾效率至少須達對數 減少值六。在以最具穿透性之微粒尺寸進行測試時’過；慮 效率最妤至少須達對數減少值9。 用於決定一過遽裝置之效率之另一數值為：達到某一對 數減少值時之（流量）/ (單位過濾面積）。舉例而f ’根據 本發明之一過渡裝置其過濾面積為14〇平方公分，该裝置 邛於流量為300 SLPM時達對數減少值9，因此，其（流量） /(單位面積）之比值為2. 1 SLPM /平方公分。同一遇濾装 置於流量為7 50 SLPM時可達對數減少值6，因此，其（流 量）/ (單位面積）之比值為5. 3 SLPM /平方公分。（流量） /(單位面積）此一比值最好係對數減少值達9時之量測 值。就本發明之過濾裝置而言，該比值為9 時應為丨至4謂/平方公分。就本發明在之十過數:裝置而 言^該比值在對數減少值達九時最好為15至/乩⑽/平 Π範=表該種產品在所需流量與所需孔隙 下列H夕"Γ Τ 間所應達到之-平衡狀態。 之範圍有所限制。 "徒供次明’而絕非對本發明 範例1 ： 在此已根據本發明之說明製造出一 似於圖1所示。外碎^X Λ 一匕濾模組，其構造_ 2 /、外设全為不鱗鋼（3 16L)製，長8 忖，直徑2. 5英叶（量測位置為衣長8. Μ央 有17英吋之中央孔，一系 ，入口與出口具 歹〗共35片孔隙燒結金屬薄膜圓jPage 11 442317 V. Description of the invention (8) Testing of the most penetrable particle size For the purposes of the present invention, 'the filter efficiency must be at least a log reduction of six when tested at the most penetrating particle size. . Tested at the most penetrating particle size; the efficiency must be at least a log reduction of 9 at least. Another value used to determine the efficiency of a pass-through device is (flow rate) / (unit filtration area) when a log reduction is reached. By way of example, f 'according to one of the transition devices of the present invention has a filtering area of 14 square centimeters. The device achieves a log reduction of 9 at a flow rate of 300 SLPM. Therefore, its (flow rate) / (unit area) ratio is 2 . 1 SLPM / cm2. When the same filter is installed, the logarithmic reduction value of 6 can be achieved when the flow is 7 50 SLPM. Therefore, the ratio of (flow) / (unit area) is 5.3 SLPM / cm2. (Flow) / (Unit area) This ratio is preferably the measured value when the logarithmic reduction value reaches 9. As far as the filtering device of the present invention is concerned, when the ratio is 9, it should be from 4 to 4 cm / cm2. As far as the tenth of the present invention is concerned: the device ^ The ratio is preferably 15 to / 乩 ⑽ / 平 Π when the logarithmic reduction value is nine. = This table shows the required flow rate and required porosity of the product. ; Γ should be reached between-equilibrium state. The scope is limited. " Acts of Confession "and not by any means to the present invention Example 1: Here has been made according to the description of the present invention as shown in Fig. 1. Outside broken ^ X Λ A dagger filter module, its structure _ 2 /, all peripherals are made of non-scale steel (3 16L), length 8 忖, diameter 2.5 inches (measurement position is clothing length 8. Μ There are 17-inch central holes in the center, one series, with inlet and outlet with a total of 35 pieces of sintered metal thin film circle j
第12頁 » 442 3 1 7 五、發明說明（9) ' ---Page 12 »442 3 1 7 V. Description of the invention (9) '---
係熔接成一體，而最靠近出口之圓盤則係一 形成流體密封》 # ' + U 該等圓盤係由鎳薄膜所構成，直徑約為2英吋（5公分）， 厚度0· 060英吋（〇· 1 524公分）。該等薄膜係由迷里波爾公 司（Mil lipore Corporation)根據美國專利第 5, 487, 77 1 號 之说明而製成，燒結溫度為攝氏8 2 5度，燒結時間九十分 鐘。該等薄膜之孔隙度約為百分之3δ至百分之42。空氣係 於每平方英吋30、50、及70碎之入口壓力下，以1500 SLPM之流量流經該裝置。該裝置對應於上列入口壓力之壓 力降幅經測得分別為每平方英吋丨〇、5 · 0、及3. 5磅。以該 裝置最具穿透性之微粒尺寸（〇.1微米）進行測試時，在上 列每一入口壓力下所測得之微粒過濾效率均大於對數減少 值9。 範例2 : 在此已製成一根據本發明之裝置，其包括堆疊圓 盤，排列方式類似於圖5所示。該等圓盤係根據美國專利 第5, 48 7, 771號所製成之鎳過濾元件β薄膜之孔隙度約為 百分之38至百分之42，直徑約2英吋（5公分）’厚度〇.060 英吋（0. 1 524公分）。 空氣係於每平方英吋30、60、及7〇磅之入口壓力下’以 3 0 0 SLΡΜ之流量流經該裝置，相對應之壓力降幅分別為每 平方英吁5.5、3,5、及3.0镑。以該裝置最具穿透性之微 粒尺寸（0 · 1微米）進行測試時，在上列每一入口壓力下所 測得之微粒過濾效率均大於對數滅少值9。They are welded together, and the discs closest to the exits form a fluid seal. "# '+ U These discs are made of a nickel film with a diameter of about 2 inches (5 cm) and a thickness of 0.060 inches. Inches (〇 · 1 524 cm). These films are made by Mil lipore Corporation according to the description of U.S. Patent No. 5,487,771. The sintering temperature is 825 ° C and the sintering time is 90 minutes. The porosity of these films is about 3δ to 42%. Air flows through the unit at a flow rate of 1500 SLPM at inlet pressures of 30, 50, and 70 crushes per square inch. The pressure drops of the device corresponding to the inlet pressures listed above were measured to be 5.0, 5.0, and 3.5 pounds per square inch, respectively. When testing with the device's most penetrable particle size (0.1 micron), the particle filtration efficiency measured at each inlet pressure above is greater than the log reduction value9. Example 2: An apparatus according to the present invention has been made here and includes stacked disks arranged in a manner similar to that shown in FIG. 5. These discs are nickel filter element beta films made according to U.S. Patent No. 5, 48 7, 771 having a porosity of approximately 38% to 42% and a diameter of approximately 2 inches (5 cm). 0.060 inches (0.124 cm). Air at 30, 60, and 70 pounds per square inch of inlet pressure 'flows through the device at a flow rate of 300 SLPM, with corresponding pressure drops of 5.5, 3, 5, and 3.0 pounds. When testing with the most penetrating particle size (0.1 micron) of this device, the particle filtration efficiency measured at each inlet pressure listed above is greater than the logarithmic value9.
第13頁 ::4423 17 ______ 五、發明說明（10) 範例3 : 在此已根據圖2之設計’製成根據本發明之一震置 支官係燒結濟管，由迷里波爾公司根據美國專利第 ^87, 771號而製$，其一端具有—實心錄質端中冒， 丄官之頂端’ H以封閉管之一 @。該等管之長度為* 吋（5.8公分），外徑為〇 635英吋（1 61公分），管_央 英叶（0·1651〇)。孔隙度約為百分之⑻。薄厚膜她 =為21.8平方英对（14〇平方公分）。該等管係 〜、 =，該轉盤則係以流體密封之方式炫接於外 、- 該裝置之整體尺寸為•具ς, 門。P。 英吋。 *長5兴吋（包括接頭），外部直徑2. 4 空氣係於每平方英吋3〇、6〇、及9〇磅之入口壓力下、 0至50 0 SLPM不等之流量流經該裝置’於5〇〇 sLp 广 得之壓力降幅分別為每平方英对7 8，4·2、及3·7所測 該裝置最具穿透性之微粒尺寸（01微米）賴測 = 300 SLPM時之微粒過渡效率大於對數減少值9，於5於 SLPM時則大於對數減少值6。Page 13 :: 4423 17 ______ V. Description of the invention (10) Example 3: Here has been made according to the design of FIG. 2 to make a sintered branch tube of a seismically installed branch system according to one of the present invention. U.S. Patent No. 87,771 is made of $. One end of it has a solid recording medium end, and the top of the eunuch's is one of the closed tubes @. The tubes are * inches (5.8 cm) in length, with an outer diameter of 0 635 inches (1 61 cm), and the tube is a central blade (0.16510). The porosity is approximately ⑻ percent. Thin film she = 21.8 square inches (14 square centimeters). These pipes are ~, =, the turntable is connected to the outside in a fluid-tight manner,-the overall dimensions of the device are P. Inches. * 5 inches in length (including fittings), outer diameter 2.4 Air flows through the device at inlet pressures of 30, 60, and 90 pounds per square inch, with flow rates ranging from 0 to 50 0 SLPM 'The pressure drop at 500sLp widely obtained was 7 8, 4 · 2, and 3 · 7 per square inch. The most penetrable particle size of the device (01 micron) was measured at 300 SLPM. The particle transition efficiency is greater than the log reduction of 9 and at 5 at SLPM it is greater than the log reduction of 6.
Claims (1)
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| US16682798A | 1998-10-05 | 1998-10-05 |
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| CN104841205B (en) * | 2015-04-17 | 2018-02-16 | 成都易态科技有限公司 | Flexible metal membrane filtration bag and preparation method thereof |
| RU2622138C1 (en) * | 2016-04-04 | 2017-06-13 | Российская Федерация, от имени которой выступает Министерство обороны Российской Федерации | Filter |
| CN109569131A (en) * | 2018-12-30 | 2019-04-05 | 洛阳博华实业有限公司 | A kind of metal film dust-remover being conveniently replaceable machine core |
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| US2997777A (en) * | 1958-10-29 | 1961-08-29 | Clevite Corp | Metal filters |
| US3581902A (en) * | 1968-10-04 | 1971-06-01 | Minnesota Mining & Mfg | Filter made from powdered metal |
| US5114447A (en) * | 1991-03-12 | 1992-05-19 | Mott Metallurgical Corporation | Ultra-high efficiency porous metal filter |
| US5238477A (en) * | 1992-01-06 | 1993-08-24 | Layton Howard M | Hepa filter unit having a metallic membrane |
| DE69401031T2 (en) * | 1993-06-04 | 1997-04-30 | Millipore Corp | Metal filter element with high efficiency and process for its production |
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