TW441859U - Flip-chip light emitting diode device - Google Patents

Flip-chip light emitting diode device

Info

Publication number
TW441859U
TW441859U TW88217448U TW88217448U TW441859U TW 441859 U TW441859 U TW 441859U TW 88217448 U TW88217448 U TW 88217448U TW 88217448 U TW88217448 U TW 88217448U TW 441859 U TW441859 U TW 441859U
Authority
TW
Taiwan
Prior art keywords
flip
light emitting
emitting diode
diode device
chip light
Prior art date
Application number
TW88217448U
Other languages
English (en)
Inventor
Feng-Ren Jian
Shiang-Jiun Hung
Original Assignee
Uni Light Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uni Light Technology Inc filed Critical Uni Light Technology Inc
Priority to TW88217448U priority Critical patent/TW441859U/zh
Publication of TW441859U publication Critical patent/TW441859U/zh

Links

TW88217448U 2000-04-12 2000-04-12 Flip-chip light emitting diode device TW441859U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88217448U TW441859U (en) 2000-04-12 2000-04-12 Flip-chip light emitting diode device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88217448U TW441859U (en) 2000-04-12 2000-04-12 Flip-chip light emitting diode device

Publications (1)

Publication Number Publication Date
TW441859U true TW441859U (en) 2001-06-16

Family

ID=21654799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88217448U TW441859U (en) 2000-04-12 2000-04-12 Flip-chip light emitting diode device

Country Status (1)

Country Link
TW (1) TW441859U (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7691659B2 (en) 2000-04-26 2010-04-06 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
US7939844B2 (en) 2000-05-26 2011-05-10 Osram Gmbh Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same
US8436393B2 (en) 2000-05-26 2013-05-07 Osram Gmbh Light-emitting-diode chip comprising a sequence of GaN-based epitaxial layers which emit radiation and a method for producing the same
US7691656B2 (en) 2000-10-17 2010-04-06 Osram Gmbh Method for fabricating a semiconductor component based on GaN
US8129209B2 (en) 2000-10-17 2012-03-06 Osram Ag Method for fabricating a semiconductor component based on GaN
US8809086B2 (en) 2000-10-17 2014-08-19 Osram Gmbh Method for fabricating a semiconductor component based on GaN

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004