經濟部智慧財產局員工消費合作社印製 必 1 4 3 6 8 7 A? 疗年 >月修正/更正/補充 B7__五、發明説明（） 1 本發明係關於電漿處理裝置，特別是關於藉由對高周 波天線施加高周波電力，於處理室內激發感應電場將之電 感耦合電漿處理裝置。 近年來，伴隨著半導體元件或是L C D的超高集積化 ，產生了進行次微米（sub-micron)單位或者進而到次半微米（ sub-half- micron)單位的超微細加工的必要。爲了藉由電漿 處理裝置實施相關的程序，在低壓環境（例如1〜 5 OmT 〇 r r )以高精度控制高密度電漿是很重要的。 而且該電漿爲了要使其也能夠對應大口徑晶圓或是大型 L C D基板，還必須是大面積高度均一的。 對於如此的技術要求，有許多確立新的電漿源的相關 硏究正在進行中。例如，在Ε Ρ - A — 0，3 7 9 ，8 2 8揭示著使用高周波天線的高周波電感 耦合電漿處理裝置。此高周波誘導電漿處理裝置1 0，如 第1 2圖所示’係以石英玻璃等的電介體1 8構成與載置 被處理體1 2的載置台相對方向的處理室1 6的一面（天 花板面）。電介體1 8的外壁面上被設置有例如由渦卷線 圈所形成的高周波天線2 0。藉由從高周波電源2 2介由 匹配電路2 4將高周波電力施加於高周波天線2 0使得處 理室1 6内形成電場。使此電場內流動的電子與處理氣體 之中性粒子衝撞將氣體電離，而藉此產生電漿。 於載置台1 4 ’爲了促進電漿流對被處理體1 2的處 理面的入射，而由高周波電源2 6施加偏壓用的高周波電 力。此外’於處理室1 6的底部，設有連通使處理室1 6 本^•尺度適用中國國家標準（CNS ) A4規格（210X;公釐) ' -4- {請先閲讀背面之注項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 436871 3产咩i月巧曰修庀/更乇/補充 ^___五、發明説明（2 ) 內成爲指定的壓力環境的排氣手段（未圖示）的排氣口 2 8。於成爲處理室1 6的天花板面的電介體1 8的中央 部設有將指定的處理氣體導入處理室1 6內用的處理氣體 導入口 3 0 ° 於上述之從前的高周波電感耦合電漿處理裝置，被設 置高周波天線的電介體，構成被保持低壓氣氛的處理室的 天花板部。亦即，爲了對抗外氣與處理室內的壓力差，有 必要使電介體的厚度變厚。結果，產生由高周波電源所投 入的能量的利用效率變差的問題。此問題特別在處理大口 徑晶圓或大面積L C D基板用的大型電漿處理裝置上變得 更爲顯著。 此外，與第1 2圖所示的裝置的氣體導入口 3 0相異 ，對應被處理物體的大型化，將對處理室內供給處理氣體 用的蓮蓬頭與高周波天線組合而使用的高周波誘導結合電 漿處理裝置係屬已知。通常，蓮蓬頭係以：被由氣體導入 口導入的處理氣體，介由擴散室，由多數的小孔向處理室 內以淋浴狀噴出的方式構成的。亦即，於具有蓮蓬頭的高 周波誘導結合電漿處理裝置，成爲在高周波天線與處理室 內的電漿產生空間之間中介著蓮蓬頭的擴散室的狀態。因 此，從天線被供給的高周波能量的一部份係在擴散室內被 消耗於產生電漿，而使得對處理室內供給的高周波能量減 少。 發明g的 本紙張尺度適用中國國家標準（CMS > A4規格（210X297公釐)~~ -5- (請先閲讀背面之注意事項再填寫本頁) 4368 7 1^ ^ 3 ：：： ' 經濟部智慧財產局員工消費合作社印製 五、發明説明（3 ) 本發明之0的’係於高周波電感耦合電漿處理裝置， 提高從高周波電源所被投入的能源的利用效率，使其即使 在低壓條件下也可以以高密度產生均一的電漿。 本發明之另一目的’係於具有蓮蓬頭的高周波電感耦 合電漿處理裝置，藉由將處理氣體均一電漿化，而使得處 理氣體的解離的進行可以正確地控制。 本發明的第1觀點，係於對被處理基板使用電漿施加 處理的裝置，具有： 規定氣密的處理室之處理容器，及 被配設於前述處理室內，且具有供支撐前述被處理基 板用的載置面的載置台，及 供排氣前述處理室內，同時將前述處理室內設定爲真 空之用的主排氣系，及 位於前述載置面的上方在前述處理室內產生電場用的 高周波天線，及 對前述高周波天線施加高周波電力用的電源部，及 在前述處理室內供供給處理氣體用的主供給系，其中 ，前述處理氣體的至少一部份爲前述電場所激發被轉化爲 電漿，前述主供給系具備有位於前述載置面與前述高周波 天線之間且與前述載置面成相對方向的蓮蓬頭，前述蓮蓬 頭具有被形成爲實質平行於前述載置面的的氣體通路及對 於前述載置面開口的複數氣體供給孔，及 前述蓮蓬頭，其中，該蓮蓬頭係由電介體實心部與含 有前述氣體通路的中空部所構成的實質上的電介體面板所 (請先閎讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 4 3 6 8 7 A? Year of treatment > Monthly correction / correction / supplement B7__V. Description of the invention () 1 The present invention relates to a plasma processing device, especially about By applying high-frequency power to the high-frequency antenna, an inductive electric field is excited in the processing chamber to inductively couple the plasma processing device. In recent years, along with the ultra-high integration of semiconductor devices or LC, it has become necessary to perform ultra-fine processing of sub-micron units or sub-half-micron units. In order to implement a related procedure by a plasma processing apparatus, it is important to control a high-density plasma with high accuracy in a low-voltage environment (for example, 1 to 5 OmTorr). In addition, in order for the plasma to also support large-caliber wafers or large LCD substrates, it must have a large area and a uniform height. For such technical requirements, there are many related studies that are establishing new plasma sources. For example, EP-A — 0, 3 7 9, 8 2 8 discloses a high-frequency inductively coupled plasma processing device using a high-frequency antenna. As shown in FIG. 12, the high-frequency-induced plasma processing apparatus 10 is made of a dielectric material 18 such as quartz glass and constitutes one side of a processing chamber 16 facing a mounting table on which a processing object 12 is placed. (Ceiling surface). The outer wall surface of the dielectric body 18 is provided with a high-frequency antenna 20 formed of, for example, a spiral coil. The high-frequency power is applied from the high-frequency power source 22 through the matching circuit 24 to the high-frequency antenna 20 to form an electric field in the processing chamber 16. The electrons flowing in this electric field collide with the neutral particles of the processing gas to ionize the gas, thereby generating a plasma. In order to promote the incidence of plasma flow on the processing surface of the object 12 to be processed on the mounting table 1 4 ', a high frequency electric power for bias is applied from a high frequency power source 26. In addition, 'the bottom of the processing chamber 16 is provided with a connecting chamber for the 16 processing chambers. The dimensions are applicable to China National Standard (CNS) A4 specifications (210X; mm)' -4- {Please read the note on the back before (Fill in this page) Printed by the Intellectual Property Bureau's Consumer Cooperatives of the Ministry of Economic Affairs, printed by 436,871 3 production, production, repair, repair, replacement, and supplementation ^ ___ V. Invention description (2) becomes the designated exhaust means for the pressure environment ( (Not shown) of the exhaust port 2 8. The central portion of the dielectric body 18 which is the ceiling surface of the processing chamber 16 is provided with a processing gas introduction port 30 for introducing a specified processing gas into the processing chamber 16 30 °. The processing device is a dielectric body provided with a high-frequency antenna, and constitutes a ceiling portion of the processing chamber maintained in a low-pressure atmosphere. That is, in order to counteract the pressure difference between the outside air and the processing chamber, it is necessary to make the dielectric thicker. As a result, there arises a problem that the utilization efficiency of the energy input from the high-frequency power source is deteriorated. This problem becomes more significant especially in large plasma processing equipment for processing large-diameter wafers or large-area LC substrates. In addition, unlike the gas inlet 30 of the device shown in Fig. 12, corresponding to the enlargement of the object to be processed, a high-frequency induction combined plasma is used in combination with a shower head for supplying a processing gas to the processing chamber and a high-frequency antenna. Processing devices are known. Generally, the shower head is configured such that the processing gas introduced through the gas introduction port is sprayed into the processing chamber through a plurality of small holes through a diffusion chamber, and is sprayed into the processing chamber. In other words, the high-frequency induction-combined plasma processing device having a shower head is in a state where a diffusion head of the shower head is interposed between the high-frequency antenna and the plasma generation space in the processing chamber. Therefore, a part of the high-frequency energy supplied from the antenna is consumed in the diffusion chamber to generate plasma, so that the high-frequency energy supplied to the processing chamber is reduced. The paper size of invention g applies to the Chinese national standard (CMS > A4 size (210X297 mm) ~~ -5- (Please read the precautions on the back before filling out this page) 4368 7 1 ^ ^ 3 ：: 'Economy Printed by the Consumer Cooperative of the Ministry of Intellectual Property Bureau. 5. Description of the invention (3) The 0 of the present invention is a high-frequency inductively coupled plasma processing device, which improves the utilization efficiency of the energy input from the high-frequency power source, even at low voltage. It is also possible to generate a uniform plasma at high density under another condition. Another object of the present invention is a high frequency inductively coupled plasma processing device with a shower head, which dissociates the processing gas by uniformly plasmaizing the processing gas. The process can be accurately controlled. A first aspect of the present invention relates to a device for applying a plasma to a substrate to be processed, comprising: a processing container defining a gas-tight processing chamber; and a processing chamber disposed in the processing chamber and having A mounting table for supporting the mounting surface for the substrate to be processed, and a main exhaust system for supplying and exhausting the processing chamber while setting the processing chamber as a vacuum, And a high-frequency antenna for generating an electric field in the processing chamber above the mounting surface, a power supply unit for applying high-frequency power to the high-frequency antenna, and a main supply system for supplying a processing gas in the processing chamber, wherein At least a part of the processing gas is that the electric field excitation is converted into a plasma. The main supply system is provided with a shower head located between the mounting surface and the high-frequency antenna and opposite to the mounting surface. The shower head has A gas passage formed substantially parallel to the mounting surface, a plurality of gas supply holes opening to the mounting surface, and the shower head, wherein the shower head is composed of a solid portion of a dielectric body and a hollow portion containing the gas path Substantially formed dielectric panel (Please read the precautions on the back before filling out this page) This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm)
經笨部中央標"-局員工消费合作社印^ ί ' 4368 7 1 Α7 ___—__Β7____五、發明説明（4 ) 規定的，當前述載置面的平面外輪廓內之前述實心部及前 述中空部的投影面積分別爲A 1及A2時，A 2 / (A 1 + A2)係被設定爲不滿0.4。 本發明的第2觀點，係於對被處理基板使用電漿施加-處理的裝置，具有： 規定氣密的處理室之處理容器，及 被配設於前述處理室內，且具有供支撐前述被處理基板 用的載置面的載置台，及 供排氣前述處理室內，同時將前述處理室內設定爲真 空之用的主排氣系，及 與前述載置面成相對方向且以接觸前述處理室內的內 面的方式被配設的天線塊，及 被配設於前述天線塊內，位於前述載置面的上方在前 述處理室內產生電場用的高周波天線，及 對前述高周波天線施加高周波電力用的電源部，及 在前述處理室內供供給處理氣體用的主供給系•其中 ，前述處理氣體的至少一部份爲前述電場所激發被轉化爲 電漿，前述主供給系具備有位於前述載置面與前述高周波 天線之間且與前述載置面成相對方向的藉由前述天線塊的 電介體製的相對方向壁所規定的蓮蓬頭，前述蓮蓬頭具有 被形成爲實質平行於前述載置面的的氣體通路及對於前述 載置面開口的複數氣體供給孔。 較佳之實施例 n^— ^^^^1 utlft— -*< - 彳 '、1· (钟先閱讀背而之注意事項再填艿本頁) 本紙張尺度適用中國國家標準（CMS ) A4規格（210X297公1 ) -7 - A7 436871 五、發明説明（5 ) 第1圖係本發明之實施例相關的電漿處理裝置之適用 ，顯示L C D基板用的蝕刻裝置。 第1圖所示之電漿蝕刻裝置1 0 〇，具有由導電材料-，例如由表面施有陽極處理鋁之處理的鋁或是不銹鋼所構. 成的圓筒型或矩形的角筒型的處理容器1 〇 2。指定的飽 刻處理•係於此被形成於處理容器1 〇 2內的處理室 1 0 2 a內進行的。Printed by the central standard of the Ministry of Dumb " -Printed by the Bureau's Consumer Cooperatives ^ '' 4368 7 1 Α7 ___—__ Β7 ____ V. As stated in the description of the invention (4), when the aforementioned solid part and the aforementioned When the projection areas of the hollow portions are A 1 and A2, A 2 / (A 1 + A2) is set to less than 0.4. A second aspect of the present invention relates to an apparatus for applying and processing a plasma to a substrate to be processed, comprising: a processing container defining a gas-tight processing chamber; and a processing chamber disposed in the processing chamber and provided to support the processed substrate. A mounting table for a substrate mounting surface, a main exhaust system for supplying and exhausting the processing chamber, and setting the processing chamber to a vacuum, and a main exhaust system opposite to the mounting surface and in contact with the processing chamber. An antenna block arranged inside, and a high-frequency antenna for generating an electric field in the processing chamber above the mounting surface, and a power source for applying high-frequency power to the high-frequency antenna. And a main supply system for supplying a processing gas in the processing chamber. Among them, at least a part of the processing gas is converted into a plasma by being excited by the electric field. The main supply system is provided on the mounting surface and A shower canopy defined by the opposite direction wall of the dielectric system of the antenna block between the high frequency antennas and facing the mounting surface. , The showerhead is formed as having a plurality of gas supply holes substantially parallel to the mounting surface of the gas passage and a mounting surface for the opening. The preferred embodiment n ^ — ^^^^ 1 utlft—-* <-彳 ', 1 · (Notes for the first reading of the back of the clock, then fill in this page) The paper size applies to the Chinese National Standard (CMS) A4 Specifications (210X297 male 1) -7-A7 436871 V. Description of the invention (5) Figure 1 shows the application of the plasma processing apparatus related to the embodiment of the present invention, showing the etching apparatus for LCD substrates. The plasma etching apparatus 100 shown in FIG. 1 has a cylindrical or rectangular prismatic type formed of a conductive material, for example, aluminum or stainless steel with anodized aluminum on its surface. Processing vessel 1 〇2. The specified saturation treatment is performed here in a processing chamber 10 2 a formed in a processing container 102.
處理容器1 0 2透過線1 0 2 c接地。於處理容器 1 ◦ 2的底部，設有供載置被處理體，例如L C D基板L 用的約略爲矩形的載置台1 0 6。載置台1 〇 6係由例如 在表面被施以鋁之陽極氧化處理的鋁或不銹鋼等導電材料 所構成的電極部1 〇 6 a ，及覆蓋該電極部1 〇 6 a的載 置面以外的部分的陶瓷等絕緣材料所構成的電極保護部 1 0 6 b所構成。載置台1 〇 6被裝設於被貫穿裝設於處 理容器1 0 2的底部的升降軸1 0 6 c上。升降軸 1 0 6 a係藉由升降機構（未圖示）而可以自由升降，可 以應需要將載置台1 0 6全體升降。此外，於升降軸 1 0 6 a的外周部，設有供保持處理室1 〇 2 a內保持氣 密用的可自由伸縮的金屬蛇腹1 0 8。 於載置台106的電極部106a ，介由匹配（ matching )電路電氣接續於高周波電源1 1 2。在電漿處 理時，藉由將指定的高周波例如2MH z的高周波電力施 加於電極部1 0 6 a，使其產生偏向電位*將處理室 1 0 2 a內所激發的電漿有效地引進基板L的處理面。又 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-8 - » U ^1 - ---I - - - ---I —. II ^1 f訐先閲讀背而之注念事項wt填巧本S ) 訂 經茇部中央標準局員工消费合作社印t 4368 7 i a? Β7 五、發明説明（6 ) 於第1圇所示的裝置，顯示在載置台1 Ο 6上施加偏壓用 的高周波電力的構成，但也可以單獨採用使載置台1 0 6 接地的構成。 ’ 於載置台1 0 6的電極部1 0 6 a，內部設有冷卻夾-套（jacket ) 1 14。冷卻夾套1 14內透過冷媒導入管 被導入例如藉由複式攪拌器來調溫的乙二醇等的冷媒。被 導入的乙二醇在該冷卻夾套114內循環產生冷卻的效果 。藉由相關的構成，乙二醇所帶著的熱童是由基板L透過 載置台1 0 6傳熱至冷卻夾套1 1 4的，可以控制使基板 L的處理面降溫到所要的溫度。在冷卻夾套114內循環 的乙二醇由冷媒排出管1 1 4 b向容器外排出。雖然在第 1圖所顯示的裝置中被省略掉，但也可以在載置台1 0 6 上設置加熱器等加熱手段，進行基板L的處理面調溫的方 式構成之。 載置台1 0 6的載置面上穿設有多數的孔1 1 5 a 。 經斧部中央標弘局員工消费合作社印袈 (讀"閱讀'背^之注意事^#4巧本頁) 藉由氣體供給管1 1 5 I通過孔1 1 5a ，將指定的傳熱 氣體例如氦氣供給至載置台1 0 6的載置面與基板L的內 面之間，可以提高傳熱效率。藉此，即使在減壓環境下， 也使得有效率地進行基板L的調溫變成可能。 此外，於載置台1 0 6的上部，設有可以將基板L的 外緣部夾住的夾具1 1 6 »夾具1 1 6被立設於載置台 106的周圍，例如藉由4根支撐柱116a來支撐。使 載置基板L的載置台1 0 6上升，藉由使夾具1 1 6抵接 於基板L的外緣部，可以將基板L載置固定於載置台 本紙張尺度適用中國國家榇準（CNS ) A4規格（2】0X297公釐）.g. k ' 43 6 8 7 1 at B? 五、發明说明（7 ) 106上。於載置台106，也設有推拴（未圖示），藉 由使此推拴升降’可以將基板L載置於載置台1 〇 6上或 者是由載置台106舉起基板L。 此外，以與在載置台1 0 6的基板L的載置面成幾乎-相對方向的處理容器1 〇 2的天花板部1 0 2 b相接的方 式，設置埋設有高周波天線1 2 0的天線塊1 1 8。天線 塊1 1 8具有層積構造，在圖式之例中，具有分別由基本 的電介體材料所構成的4層構造。亦即，由天花板部 1 0 2 b側開始，係由玻璃（pyrex )層，石英層1 1 8 b ，雲母（mica)等被壓縮的粉末狀電介體材料中埋設有高周波 天線1 2 0的天線埋入層1 1 8 c ·以及於石英中內設有 處理氣體通路的處理氣體供給層1 1 8 d所構成。 經"·部中央標象局員工消费合作社印繁 (請先閱讀背而之注意事項再填艿本頁) 又，層積的電介體材料，藉由高周波電力的施加使高 周波天線1 2 0加熱的場合，爲了不因該熱而產生剝離等 的現象，以使用熱膨脹率相近的材料較佳。此外，在圖示 之例中，考慮加工性以及成本而使用雲母或玻璃（pyrex) ，但也可以全部都使用石英來構成。此外層積的數目也不 限於4層，也可以層積更多的電介體層。或者是不採用層 積構造，而在由單一電介體層所構成的天線塊中埋設高周 波天線而構成亦可。 處理容器102的天花板部l〇2b，天線塊118 可以同時與高周波天線1 2 0自由的拆裝》藉此，天線塊 1 1 8以及高周波天線1 2 0的維修也可以容易進行。 天線埋入層1 1 8 c，如第2圖所示，具有在被壓縮 本紙張尺度適用中國國家標窣（CMS ) A4規格（210X297公龙）-1.0- 4368 7 1 經";部中央標準局員工消费合作社印製 ___五、發明説明（8 ) 的粉末狀的雲母等電介體層中夾入帶狀的導電體的構造' 例如夾入銅板，鋁板，不銹鋼板等作爲高周波天線1 2 ◦ 。藉由在粉末狀的電介體材料裝埋入高周波天線1 2 0，' 天線埋入層1 1 8 c成爲可以吸收天線1 2 0的熱膨脹，-可以防止剝離等的發生。 此外，石英等一般的固體電介體材料中埋入高周波天 線1 2 0的場合，高周波電力被施加至高周波天線1 2 0 ，加熱高周波天線1 2 0以及其周圍時|由於電介體層與 高周波天線Γ2 0之間熱膨脹率的差異，而使得高周波天 線1 2 0由於熱膨脹而產生應變，而有產生剝離等現象的 危險。亦即，在如此的場合，如第2圖所示，在高周波天 線1 2 0的許多地方設置缺口部1 2 0 a ，而使其可以吸 收高周波天線1 2 0的熱膨脹。 亦即，如本實施形態，在使用粉末狀的電介體材料的 同時，於高周波天線1 2 0上設有缺口部1 2 0 a的話， 由於效果相加可以吸收高周波天線1 2 0的熱膨脹，因此 不易產生應變，可以防止產生剝離等不欲發生的現象。 又*在圖示之例中，高周波天線1 2 0，係被構成爲 數圈之渦卷線圈狀，高周波天線1 2 0只要具有供產生電 漿的天線作用的機能即可，周波數變高的話即使數圈亦可 0 再者，參照第1圖，可知設有給電路徑1 2 2 a以及 接地路徑1 2 2 b ，貫通玻璃（pyrex)層1 1 8 a以及石 英層1 1 8b ，進而直到雲母層1 18c中的高周波天線 本紙張尺度適用中國國家標準< CNS } A4規格（210X29?公犮）.Ή - 4368 7 1 經芦部中央標違局員工消費合作社印裂 A 7^_五、發明説明（9 ) 120爲止。於給電路徑122a ，透過匹配電路124 接續著高周波電源1 2 6 »於處理時，由高周波電源 1 2 6將指定的周波數例如1 3.5 6MH z的高周波電力· 施加於高周波天線1 2 0，可以在處理室1 0 2 a內激發-誘導電漿。又，在高周波天線1 2 0與被接地的處理容器 1 0 2的天花板部1 0 2 b之間存在著的電介體，具有防 止由於接地的影響而增加高周波天線1 2 0的電容的功能 處理氣體供給層1 1 8 d，係於石英等的電介體製的 面板中形成有氣體通路1 2 8。於處理氣體供給層 1 1 8 d的載置台1 〇 6側之面上，如第3圖所示，穿設 有連通氣體通路128的多數孔128a ，構成蓮蓬頭。 由處理氣體源130透過流量控制裝置（MFC) 132 向氣體通路1 2 8所供給的指定處理氣體，例如CF 4氣體 (蝕刻S i 0 2用），B C 1 3 + C 1 2氣體（蝕刻鋁用）， 係由孔1 2 8 a呈淋浴狀向處理室1 0 2 a內吹出。藉此 ，使處理室1 0 2 a內的處理氣體濃度均一化，亦即可以 在處理室1 0 2 a內激發均勻密度的電漿。 此外，在第3圖所示.之例中，處理氣體供給層 1 1 8 d僅係層積構造的一部份，也可以如第4圖所示取 代此法，將石英等電介體材料製的處理氣體供給管1 3 4 設於天線埋入層1 1 8 c的載置台1 06側。在此場合* 於處理氣體供給管1 3 4的載置台1 0 6側穿設多數的孔 134a ，由這些孔134a將處理氣體吹入處理室 本紙伕尺度適用中S國家標準（CNS ) A4规格Γ210Χ 297公釐) 12 - ~~ 經濟部智慧財產局員工消費合作社印製 1 4368 71 A7 彳 ' 3 今 _ B7__—_五、發明説明（10 ) 1 0 2 a 內。 天線塊1 1 8中設有循環冷卻水的路徑，可以使冷卻 水循環。藉此，可以冷卻由高周波電力的施加所加熱的高 周波天線1 2 0，可以延長高周波天線1 2 0以及天線塊 1 1 8的壽命。 本實施形態相關的蝕刻裝置1 0 0的天線塊1 1 8以 及高周波天線1 2 0係一體地設於處理容器1 0 2的內部 。因此，無論大氣壓與處理室內的壓力差是多少，被處理 物體側的電介體層的厚度可以製作成較高周波天線1 2 0 的厚度更薄。亦即，藉由從高周波電源1 2 6對高周波天 線1 2 0施加的高周波電力，可以在處理室1 〇 2 a內形 成更強的電場，可以使高周波能量的利用更爲有效。此外 ，因爲可以自由調整電介體的厚度，所以可以更高精度地 控制處理室內所激發的感應電漿的分布以及密度。 處理容器1 0 2的底部連續連接著排氣手段，例如連 接著真空幫浦1 3 6 a的排氣管1 3 6。處理室1 02 a 內的環境可以藉由排氣手段的排氣而抽真空至任意減壓度 的環境。 處理容器1 0 2的側部設有閘門閥1 3 8。透過閘門 閥1 3 8可以由鄰接的裝塡鎖定（load-l〇ck)室（未圖示） ，藉由搬送臂等搬送機構（未圖示）而將未處理的L CD 基板L搬進處理室1 〇 2 a ’同時可以將已處理的LCD 基板L搬出去。 其次，說明關於第1圖所示的電漿蝕刻裝置的動作。 (請先閲讀背面之注^^項再填寫本頁) 本紙張尺度適用中國國家揉準{ CNS ) A4規格（210X297公釐） -13- A7 經芦部中央樘準局員工消费合作社印衷 五、發明説明Μ1 ) 首先，透過閘門閥1 3 8將基板L藉由搬送臂（未圖 示）收容於處理室1 0 2 a內》此時，載置台1 0 6位於 下方位置，而推拴（未圖示）則在上升中。搬送臂將基板_ L至於推拴上，透過閘門閥1 3 8搬送臂退避至處理容器· 1 0 2外。其次，推拴下降，基板L被載置於載置台 1 0 6的載置面。其次，藉由升降機構的驅動使載置台 1 0 6上升，於夾具1 1 6的下面壓押基板L的周緣部， 將基板L固定於載置台1 0 6。 處理室102a內，藉由被接續於排氣管1 36的真 空幫浦1 3 6 a抽真空。同時，由處理氣體供給層 1 1 8 d的處理氣體供給孔1 2 8 a將指定的氣體’例如 CF4氣體（蝕刻SiO:用），BC13+C1:氣體（蝕 刻鋁用），導入處理室102a內=藉此|處理室 1 0 2 a內保持於例如3 0 m T ◦ r r程度的低壓狀態。 由高周波電源1 2 6透過匹配電路1 2 4，將例如 1 3.5 6MH z的高周波電力施加於被埋設於天線塊 118的天線埋入層118c的高周波天線120。如此 ，藉由高周波天線1 2 0的誘導成分的誘導作用在處理室 1 0 2 a內形成電場。高周波天線1 2 0係被埋設於處理 容器1 0 2的天花板部1 〇 2 b相接設置的天線塊1 1 8 的天線埋入層1 1 8 c。因此，對於被處理物體而言相對 方向側的電介體層的厚度與從前相比較可以做得更薄。亦 即，與從前的裝置比較，可以在處理室1 〇 2 a內形成更 強的電場，結果，可以在處理室1 〇 2 a內產生更高密度 (ΐ.先閱讀背面之注意事頌再填艿本頁) 本紙張尺度適用中國國家標準（CNS } Α4現格（210X297公釐） -14- 經濟部智慧財產局員工消費合作杜印製 i 436d 71 ....- · ： Α7 Β7五、發明説明（12 ) 的電漿。 處理室1 0 2 a內所激發的電漿.，藉由被施加於載置 台1 〇 6的偏壓電位而向載置台1 〇 6上的基板L的方向 移動。如此，可以使用電漿’對於處理面施以所要的蝕刻' 處理。而在結束指定的蝕刻處理之後’已處理的L C D基 板L藉由搬送臂通過閘門閥1 3 8被搬出至裝塡鎖定室’ 結束一連串的動作。 根據參照第1圖至第4圖所示的蝕刻裝置所描述的實 施形態所相關的電漿處理裝置’可以達到以下所示之優異 作用效果。 因爲埋設高周波天線的電介體係接於處理容器內設置 的，所以不管大氣壓與處理室內的壓力差’都可以較薄的 電介體厚度構成。亦即’可以更有效地利用對於高周波天 線施加的高周波能量°此外，因爲可以自由調整電介體地 厚度，所以可以更高的精度控制處理室內所激發的感應電 漿的分布與密度。 此外，由電漿處理裝置所設的電介體在對於被處理物 體相對方向之側穿設複數氣體吹出孔均勻地向處理室內供 給處理氣體。因此，即使是要處理例如大口徑的晶圓或是 大面積的L C D基板的場合，也可以藉由在處理室內以均 勻的密度激發的電將進行處理，可以提高處理的面內均一 性。 此外，被設置於電槳處理裝置的天線塊’因爲係藉由 複數的電介體構件的層積而構成的，所以高周波天線或是 (請先鬩讀背面之注意事項再填寫本貰) 本紙張尺度適用中國国家標率（CNS ) A4規格（210X297公釐） -15- ► ' 4368 7 1 * A7 t 3 .外' - …- B7__ 五、發明説明（16 ) 首先，以與第1圖所示的裝置的動作相同的程序將基 板L固定於載置台1 〇 6之後’處理室1 〇 2 a內’藉由 接續於排氣管1 3 6的真空幫浦1 3 6 a抽真空。同時’ 由處理氣體供給部1 6 8的處理氣體供給孔1 7 2 a將指· 定的處理氣體例如C F 4氣體（蝕刻S i 0 2用），B C 1 3 + C1 2氣體（蝕刻鋁用）導入處理室102a內。藉此， 處理室1 0 2 a內保持於例如30mTo r r程度的低壓 狀態。此外，於天線室1 6 0內，由給氣管1 6 6供給天 線室氣體亦即非活性氣體，保持於例如1 0 0 T 〇 r r程 度的低於大氣壓的壓力狀態。 由高周波電源1 2 6透過匹配電路1 2 4，將例如 1 3.5 6MH z的高周波能量施加於天線室1 6 0內的高 周波天線1 6 2。如此，藉由高周波天線1 6 2的電感成 分的電感作用在處理室1 0 2 a內形成電場。天線室 1 6 0被設於接於處理容器1 0 2的天花板部1 0 2 b的 位置，同時天線室1 6 0之對於被處理物體相對面之側的 壁1 6 0 a的厚度與從前的裝置相比可以做得更薄u亦即 ，與從前的裝置比較，可以在處理室1 0 2 a內形成更強 的電場’結果’可以在處理室1 〇 2 a內產生更高密度的 電漿。 如此使用於處理室1 0 2 a內所產生得電漿，對於處 理面施以所要得蝕刻處理。蝕刻處理後的基板L ，以與第 1圖所示的裝置的動作相同的程序，從裝塡鎖定室搬出， 結束一連串的動作。 本纸張尺度適用中國國家標隼（CNS ) A4規格（210X—297公着) (請先閱讀背面之注意事項再填寫本頁) •-訂- 經濟部智慧財產局員工消費合作社印製 -19- 4368 7 1 at ^ -¾ . ._B7_ 五、發明説明（20 ) (請先閲讀背面之注意事項再填寫本頁) 1 0 2 a之間，只要存在著處理氣體供給層2 1 0的實心 電介體部分。亦即，從高周波電源透過高周波天線1 2 0 所投入的電場能量的損失雖然不能夠完全避免掉，但在處 理室1 0 2 a內，從氣體通路2 1 2不存在的處理氣體供‘ 給層2 1 0的部分被供給充分的電場能量。 經濟部智慧財產局員工消費合作社印製 此外，由下述理由，對於載置台1 0 6的載置面的平 面配置，氣體通路2 1 2及高周波天線1 2 0同樣對於載 置台2 0 6的載置面的中心成實質上爲線對稱或者是點對 稱的方式配置的。亦即，起因於氣體通路2 1 2內之處理 氣體的電漿化所導致的損失，氣體通路2 1 2存在的部分 與不存在的部分，由高周波天線1 2 0對處理室1 0 2 a 內所供給的電場能量是不同的。這是使藉由高周波天線 1 2 0在處理室1 0 2 a內所形成的高周波誘導電場的均 一性降低的原因。亦良口，不僅氣體通路2 1 2的投影面積 減少而已，氣體通路2 1 2及高周波天線1 2 0的形狀對 於載置台1 0 6上的被處理基板L的中心（也就是載置面 的中心）成爲實質上線對稱或是點對稱的配置，對於電漿· 處理的均…化都有幫助。 此外，由天線1 2 0所供給的電場能量，形成槪略如 第1 1圖所示的強度分布。天線1 2 0如第8圖以及第 1 1圖所示，具有相互離間的內周部1 2 0 C以及外周部 1 2 0 S，期間被形成完全不存在線圈部分的中間部 120M。但是，藉由內周部120C以及外周部 1 2 0 S的協調動作所產生的電場能量，如第1 1圖所示 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） -23- 436871 A7 ____ B7 五、發明説明（21 ) 在中間部1 2 0M變得最強。亦即，如果在此中間部 1 2 0M的正下方設置氣體通路2 1 2的話，可以使通過 此處的中間部1 2 0M的電場能量降低。藉此，處理室 1 0 2 a內的電場的強度均一化，亦即，可以將處理氣.體 均一地電漿化。 第1 0圖係顯示第7圖所示的蝕刻裝置的處理氣體供 給層的變更例的平面圖。 於此變更例，處理氣體供給層2 2 0，與處理氣體供 給層1 1 8 d相同，係由石英等電介體製的面板所構成。 於處理氣體供給層2 2 0中，形成與載置台1 〇 6的載置 面成平行而延伸的氣體通路2 2 2。由氣體通路2 2 2以 對於載置台I 0 6的載置面開口的方式，在處理氣體供給 層220上形成多數的孔222a。 更具體而言，氣體通路2 2 2，具有對於載置台 經濟部中央標準局員工消費合作社印製 (請先閱讀#而之注意事項再妒，本頁) 1 0 6的載置面的中心成點對稱的形狀。氣體通路2 2 2 係透過流量控制裝置（MF C ) 1 3 2以橫貫被接續於處· 理氣體源130的一對進氣口 224，及與進氣口 22 4_ 成直角連接的一對多樣體2 2 6 ，及由多樣體2 2 6的端 部分歧的多數分枝2 2 8所構成。進氣口 2 2 4、多樣體 2 2 6以及分枝2 2 8具有例如剖面爲矩形的相同剖面積 。氣體供給孔2 2 2 a僅分別被配設於各分枝2 2 8的端 部。從氣體通路2 2 2的進氣口 224到氣體供給孔 2 2 2 a爲止的各個導通路程相同。藉此，可以將處理氣 體均一地分散在處理室1 0 2 a內。 本紙張尺度適用中國國家標準{ CNS ) A4規格（2I0X297公釐）-24 - 經濟部中央梯準局員工消赍合作社印製 ί 4 3 6 8 7 1 α7 ___Β7五、發明説明（22 ) 又，氣體通路2 1 2的投影面積及配置’或是氣體通 路的導通路程相關的特徵，也可以適用於將高周波天線 1 2 0配設於如第5圖所示的中空的天線塊，亦即天線室 160內的裝置•或是設於處理容器外部的裝置。 . 根據參照第7圖至第1 0圖而加以敘述的實施形態相 關的電漿處理裝置，具有以下所示的優良的作用與效果。 於對於載置台的載置面的平面配置，藉由特定蓮蓬頭 的氣體通路與高周波天線重疊的面積的比率或是重疊的位 置，可以抑制氣體通路與高周波天線所導致的與高周波誘 導電場相互間的不良影響。亦即，將處理氣體均一地電漿 化，同時可以正確控制處理氣體的解離的進行。 此外，藉由使氣體通路的進氣口到氣體供給孔爲止的 各個導通路程成爲相同，可以將處理氣體均一分散於處理 室內。 又，於上述各實施形態，說明將L C D基板作爲被處 理物體進行處理的場合，但是本發明也可以適用於將半導 體晶圓作爲被處理物體的處理裝置》此外，上述各實施形 態中，顯示將本發明作爲蝕刻裝置來適用的例子，但是本 發明對於利用電漿的各種裝置，例如灰化裝置或是電漿 CVD裝置也可以適用。 圖面之簡單說明 第1圖係本發明之實施例相關的電漿處理裝置之適用 ，顯示L C D基板用的蝕刻裝置的剖面圖。 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） *25- it' 436d 7 1 A7 經濟部中央標準局貝工消費合作社印製 _______B7五、發明説明（23 ) 第2圖係顯示第1圖之蝕刻裝置的電介體內所埋設的 高周波天線的槪略平面圖。 第3圖係顯示第1圖之蝕刻裝置的處理氣體供給層的 平面圖。 _ 第4圖係顯示第1圖之蝕刻裝置的處理氣體供給層的 變更例之平面圖。 第5圖係本發明之另一實施例相關的電漿處理裝置之 適用，顯示L C D基板用的蝕刻裝置的剖面圖。 第6圖係顯示第5圖所示的蝕刻裝置的高周波天線的 槪略平面圖》 第7圖係本發明之進而另一實施例相關的電漿處理裝 置之適用，顯示L C D基板用的蝕刻裝置的剖面圖。 第8圖係顯示第7圖所示的蝕刻裝置的高周波天線與 處理氣體通路的關係的平面圖。 第9圖係顯示第7圊所示的蝕刻裝置的高周波天線與 處理氣體通路的關係的剖面圓。 第10圖係顯示第7圖所示的蝕刻裝置的處理氣體供 給層的變更例之平面圖。 第1 1圖係顯示根據第7圖所示的蝕刻裝置的高周波 天線所發出之電場能量的強度分布槪略圖。 第1 2圖係顯示從前的高周波誘導結合電漿處理裝置 之槪略剖面圖。 主要元件符號說明 (請先閱讀背面之注意事項再填贫，本頁) 本紙張尺度適用中國國家標準（CNS ) Λ4規格（2丨0X297公釐） -26 - A7 4368 7 1 B7 五、發明説明（24 ) 1 0 2 a氣密處理室 106 載置台 118 天線塊 12 0 高周波天線 12 6 電源 13 6a 真空幫浦 L L C D基板 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印黎 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -27 -The processing vessel 1 0 2 is grounded through a line 10 2 c. At the bottom of the processing container 1 ◦ 2 is provided a roughly rectangular mounting table 1 06 for mounting the object to be processed, for example, the L C D substrate L. The mounting table 106 is an electrode section 106a made of a conductive material such as aluminum or stainless steel that is anodized with aluminum on the surface, and the mounting section 10a is other than a mounting surface covering the electrode section 106a. The electrode protection portion 10 6 b is made of an insulating material such as ceramic. The mounting table 106 is mounted on an elevating shaft 106c which is inserted through the bottom of the processing container 102. The lifting shaft 1 0 6 a can be lifted and lowered freely by a lifting mechanism (not shown), and the entire mounting table 10 6 can be lifted as needed. In addition, a freely retractable metal bellows 108 is provided on the outer peripheral portion of the lifting shaft 10a to hold the airtightness in the processing chamber 10a. The electrode portion 106a of the mounting table 106 is electrically connected to the high-frequency power source 1 1 2 through a matching circuit. During plasma processing, a specified high-frequency wave, such as a high-frequency wave of 2 MHz, is applied to the electrode portion 1 06a to generate a bias potential. * The plasma excited in the processing chamber 1 02a is effectively introduced into the substrate The processing surface of L. And this paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) -8-»U ^ 1---- I------ I —. II ^ 1 f Note the matter wt Fill in this book S) Printed by the Ministry of Standards, Central Bureau of Standards, Consumer Consumption Cooperatives t 4368 7 ia? Β7 V. Description of the invention (6) The device shown in Section 1 is displayed on the mounting table 1 0 6 The configuration of applying high-frequency power for applying a bias voltage, but it is also possible to employ a configuration in which the mounting table 106 is grounded alone. ′ An electrode part 10 6 a of the mounting table 10 6 is provided with a cooling jacket-jacket 1 14 inside. The inside of the cooling jacket 114 is introduced through a refrigerant introduction pipe into a refrigerant such as ethylene glycol, which is temperature-controlled by a double mixer. The introduced ethylene glycol circulates in the cooling jacket 114 to produce a cooling effect. With the related structure, the heat child carried by the ethylene glycol is transferred from the substrate L through the mounting table 10 to the cooling jacket 1 1 4, and the temperature of the processing surface of the substrate L can be controlled to be lowered to a desired temperature. The ethylene glycol circulating in the cooling jacket 114 is discharged out of the container through the refrigerant discharge pipe 1 1 4 b. Although the device shown in FIG. 1 is omitted, a heating means such as a heater may be provided on the mounting table 106 to adjust the temperature of the processing surface of the substrate L. A plurality of holes 1 1 5 a are perforated on the mounting surface of the mounting table 10 6. By the Axe Department Central Standard Bureau Bureau Consumer Consumption Cooperative Seal (read " read 'Notes on the back ^^ # 4 本页） Through the gas supply pipe 1 1 5 I through the hole 1 1 5a, the specified heat transfer A gas such as helium is supplied between the mounting surface of the mounting table 106 and the inner surface of the substrate L, and the heat transfer efficiency can be improved. This makes it possible to efficiently adjust the temperature of the substrate L even under a reduced pressure environment. In addition, a clamp 1 1 6 capable of clamping the outer edge portion of the substrate L is provided on the upper portion of the mounting table 106. The clamp 1 1 6 is erected around the mounting table 106, for example, by four support columns. 116a to support. Raise the mounting table 106 on which the substrate L is placed, and abut the clamp 1 16 on the outer edge of the substrate L, so that the substrate L can be mounted and fixed on the mounting table. ) A4 specification (2) 0X297 mm. G. K '43 6 8 7 1 at B? V. Description of the invention (7) 106. A pusher (not shown) is also provided on the mounting table 106, and the substrate L can be placed on the mounting table 106 or the substrate L can be lifted by the mounting table 106 by raising and lowering the pusher. In addition, an antenna in which the high-frequency antenna 1 2 0 is embedded is provided so as to be in contact with the ceiling portion 1 2 2 of the processing container 1 102 in a nearly opposite direction to the mounting surface of the substrate L on the mounting table 106. Block 1 1 8. The antenna block 1 1 8 has a laminated structure, and in the example of the drawing, it has a four-layer structure made of a basic dielectric material, respectively. That is, the high frequency antenna 1 2 0 is embedded in a compressed powdery dielectric material such as a glass layer (pyrex) layer, a quartz layer 1 1 8 b, and a mica (mica) starting from the side of the ceiling portion 10 2 b. The antenna buried layer 1 1 8 c is composed of a processing gas supply layer 1 1 8 d provided with a processing gas passage in quartz. The Ministry of Economics and Labor of the Central Bureau of Standards and Consumers Cooperatives printed and printed (please read the precautions on the back and then fill out this page) Also, the laminated dielectric material enables high-frequency antennas by applying high-frequency power 1 2 In the case of 0 heating, it is preferable to use a material having a similar thermal expansion coefficient so as not to cause the phenomenon such as peeling due to the heat. In the illustrated example, mica or glass (pyrex) is used in consideration of workability and cost. However, all of them may be made of quartz. In addition, the number of layers is not limited to four, and a larger number of dielectric layers may be laminated. Alternatively, instead of using a laminated structure, a high-frequency antenna may be embedded in an antenna block composed of a single dielectric layer. The ceiling portion 102b of the processing container 102 and the antenna block 118 can be freely disassembled and attached to the high-frequency antenna 120 simultaneously. Therefore, maintenance of the antenna block 118 and the high-frequency antenna 120 can be easily performed. The antenna embedded layer 1 1 8 c, as shown in Figure 2, has the Chinese National Standard (CMS) A4 specification (210X297 male dragon) -1.0- 4368 7 1 at the center of the compressed paper. Printed by the Consumer Bureau of the Standards Bureau ___ V. Invention Description (8) The structure of sandwiching a band-shaped conductor in a dielectric layer such as powdered mica, such as a copper plate, aluminum plate, and stainless steel plate as a high-frequency antenna 1 2 ◦. By embedding the high frequency antenna 1 2 0 in the powdery dielectric material, the antenna embedded layer 1 1 8 c can absorb the thermal expansion of the antenna 1 2 0, and can prevent the occurrence of peeling and the like. In addition, when a high-frequency antenna 1 2 0 is embedded in a general solid dielectric material such as quartz, high-frequency power is applied to the high-frequency antenna 1 2 0, and the high-frequency antenna 1 2 0 and its surroundings are heated | because of the dielectric layer and the high-frequency wave The difference in thermal expansion rate between the antennas Γ2 0 causes the high-frequency antenna 1 2 0 to undergo strain due to thermal expansion, and there is a risk of peeling and the like. That is, in such a case, as shown in Fig. 2, notch portions 120a are provided in many places of the high-frequency antenna 1220 so that it can absorb the thermal expansion of the high-frequency antenna 1220. That is, as in this embodiment, when a powdery dielectric material is used and a notch portion 1 2 a is provided on the high-frequency antenna 1 2 0, the thermal expansion of the high-frequency antenna 1 2 0 can be absorbed due to the addition of effects. Therefore, it is difficult to generate strain, and it can prevent unwanted phenomena such as peeling. Also * In the example shown in the figure, the high-frequency antenna 1 2 0 is configured as a spiral coil of several turns, and the high-frequency antenna 1 2 0 only needs to have the function of an antenna for generating plasma, and the frequency of the high-frequency antenna 1 2 0 can be increased. Even if it is a few turns, it can be 0. Furthermore, referring to the first figure, it can be seen that the power supply path 1 2 2 a and the ground path 1 2 2 b are provided, and the glass (pyrex) layer 1 1 8 a and the quartz layer 1 1 8b are provided. Until the high-frequency antenna in the mica layer 1 18c, the paper size applies the Chinese national standard < CNS} A4 specification (210X29? Public address). And invention description (9) up to 120. The high-frequency power source 1 2 6 is connected to the power supply path 122a through the matching circuit 124. »During processing, the high-frequency power source 1 2 6 applies a specified frequency of the high-frequency power, such as 1 3.5 6 MHz, to the high-frequency antenna 1 2 0. The plasma was excited-induced in the processing chamber 10 2 a. A dielectric exists between the high-frequency antenna 1 2 0 and the ceiling portion 1 2 2 b of the grounded processing container 1 2 2, and has a function of preventing the capacitance of the high-frequency antenna 1 2 0 from increasing due to the influence of grounding. The processing gas supply layer 1 1 8 d has a gas passage 1 2 8 formed in a panel of a dielectric system such as quartz. As shown in FIG. 3, a plurality of holes 128a communicating with the gas passage 128 are formed on the surface of the processing table 106 side of the processing gas supply layer 1 18d to form a shower head. The specified processing gas supplied from the processing gas source 130 through the flow control device (MFC) 132 to the gas path 1 2 8 is, for example, CF 4 gas (for etching S i 0 2), BC 1 3 + C 1 2 gas (for etching aluminum It is blown out from the hole 1 2 8 a into the processing chamber 10 2 a in a shower shape. Thereby, the concentration of the processing gas in the processing chamber 10 2 a is uniformized, that is, a plasma having a uniform density can be excited in the processing chamber 10 2 a. In addition, in the example shown in FIG. 3, the processing gas supply layer 1 1 8 d is only a part of the laminated structure. As shown in FIG. 4, this method may be replaced with a dielectric material such as quartz. The produced processing gas supply pipe 1 3 4 is provided on the mounting table 106 side of the antenna embedding layer 1 1 8 c. In this case, a large number of holes 134a are formed on the mounting table 1 06 side of the processing gas supply pipe 134, and the processing gas is blown into the processing chamber through these holes 134a. The national standard (CNS) A4 specification of the paper is applicable. Γ210χ 297 mm) 12-~~ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 4368 71 A7 彳 '3 Today_ B7 __—_ V. Description of the invention (10) Within 1 0 2 a. The antenna block 1 1 8 is provided with a path for circulating cooling water, so that the cooling water can be circulated. Thereby, the high-frequency antenna 1 2 0 heated by the application of high-frequency power can be cooled, and the life of the high-frequency antenna 1 20 and the antenna block 1 1 8 can be extended. The antenna block 1 1 8 and the high-frequency antenna 1 2 0 of the etching device 100 according to this embodiment are integrally provided inside the processing container 10 2. Therefore, regardless of the pressure difference between the atmospheric pressure and the processing chamber, the thickness of the dielectric layer on the side of the object to be processed can be made thinner with a higher frequency of the antenna 1 2 0. That is, by applying the high-frequency power from the high-frequency power source 12 to the high-frequency antenna 120, a stronger electric field can be formed in the processing chamber 10a, and the use of high-frequency energy can be made more efficient. In addition, since the thickness of the dielectric can be freely adjusted, the distribution and density of the induction plasma excited in the processing chamber can be controlled with higher accuracy. An exhaust means is continuously connected to the bottom of the processing container 102, for example, an exhaust pipe 1 36 connected to a vacuum pump 1 3 6a. The environment in the processing chamber 102a can be evacuated to an environment with a reduced pressure by the exhaust of the exhaust means. A gate valve 1 3 8 is provided on the side of the processing container 102. The gate valve 1 3 8 can lock an adjacent load-lock chamber (not shown), and carry unprocessed L CD substrates L by a transfer mechanism (not shown) such as a transfer arm. The processing chamber 1 02a 'can simultaneously carry out the processed LCD substrate L. Next, the operation of the plasma etching apparatus shown in FIG. 1 will be described. (Please read the note ^^ on the back before filling in this page) This paper size is applicable to the Chinese National Standard {CNS) A4 size (210X297 mm) -13- A7 by the Consumers' Cooperatives of the Central Bureau of Standards of the Ministry of Lu. Description of the invention M1) First, the substrate L is stored in the processing chamber 1 0 2 a by the transfer arm (not shown) through the gate valve 1 3 8. At this time, the mounting table 1 6 is located at a lower position and the bolt ( (Not shown) is on the rise. The conveying arm pushes the substrate _ L onto the bolt, and retreats to the processing container · 102 through the gate valve 1 3 8. Next, the pusher is lowered, and the substrate L is placed on the placement surface of the placement table 106. Next, the mounting table 106 is raised by driving of the lifting mechanism, and the peripheral edge portion of the substrate L is pressed on the lower surface of the jig 116 to fix the substrate L to the mounting table 106. The processing chamber 102a is evacuated by a vacuum pump 1 3 6 a connected to the exhaust pipe 1 36. At the same time, a specified gas such as CF4 gas (for etching SiO: for use), BC13 + C1: gas (for etching for aluminum) is introduced into the processing chamber 102a through the processing gas supply holes 1 2 8 a of the processing gas supply layer 1 1 8 d. Inside = This means that the processing chamber 1 0 2 a is maintained at a low pressure of, for example, 30 m T ◦ rr. From the high-frequency power source 1 2 6 through the matching circuit 1 2 4, high-frequency power such as 1 3.5 6 MHz is applied to the high-frequency antenna 120 buried in the antenna embedding layer 118 c of the antenna block 118. In this way, an electric field is formed in the processing chamber 10 2 a by the induction of the induction component of the high-frequency antenna 12 20. The high-frequency antenna 1 20 is buried in the ceiling portion 1 2 of the processing container 10 2, and the antenna embedment layer 1 1 8 c of the antenna block 1 1 8 is arranged next to each other. Therefore, the thickness of the dielectric layer on the opposite side to the object to be processed can be made thinner than before. That is, compared with the previous device, a stronger electric field can be formed in the processing chamber 1 02a, and as a result, a higher density can be generated in the processing chamber 1 02a (ΐ. Read the cautions on the back side and then (Fill in this page) This paper size applies Chinese national standard (CNS) Α4 is now (210X297 mm) -14- Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Consumption Du printed i 436d 71 ....- ·: Α7 Β7 五The plasma of invention description (12). The plasma excited in the processing chamber 10a is applied to the substrate L on the mounting table 106 by a bias potential applied to the mounting table 106. In this way, you can use the plasma to apply the desired etching to the processing surface. After the specified etching process is completed, the processed LCD substrate L is carried out by the transfer arm through the gate valve 1 3 8 to The installation lock chamber 'ends a series of operations. The plasma processing apparatus according to the embodiment described with reference to the etching apparatus shown in FIG. 1 to FIG. 4 can achieve the excellent effects shown below. The dielectric system of the antenna is connected to the processing It is installed inside the device, so regardless of the atmospheric pressure and the pressure difference in the processing chamber, it can be made of a thinner dielectric thickness. That is, the high-frequency energy applied to the high-frequency antenna can be more effectively used. In addition, because the dielectric can be freely adjusted The thickness of the ground, so that the distribution and density of the induction plasma excited in the processing chamber can be controlled with higher accuracy. In addition, the dielectric provided by the plasma processing device is provided with a plurality of gases on the side opposite to the object to be processed. The blow-out holes uniformly supply the processing gas into the processing chamber. Therefore, even when a large-diameter wafer or a large-area LCD substrate is to be processed, it can be processed by electricity excited at a uniform density in the processing chamber. In addition, the in-plane uniformity of processing can be improved. In addition, the antenna block 'installed in the electric paddle processing device' is constructed by laminating a plurality of dielectric members, so a high-frequency antenna or (please read it first) Note on the back, please fill in this again.) This paper size is applicable to China National Standards (CNS) A4 specification (210X297 mm) -15- '4368 7 1 * A7 t 3. Outer'-…-B7__ 5. Description of the Invention (16) First, the substrate L is fixed to the mounting table 1 〇6 after the same procedure as the operation of the apparatus shown in FIG. 1 ′ The processing chamber 1 〇2a 'is evacuated by a vacuum pump 1 3 6a connected to the exhaust pipe 1 3 6. At the same time, the processing gas supply hole 1 6 2 a of the processing gas supply section 1 6 8 will · A predetermined processing gas such as CF 4 gas (for etching Si 0 2), and BC 1 3 + C1 2 gas (for etching aluminum) are introduced into the processing chamber 102a. Thereby, the processing chamber 1 0 2 a is maintained at, for example, 30 mTo rr level of low pressure. In addition, in the antenna chamber 160, the antenna chamber gas, i.e., inert gas, is supplied from the gas supply pipe 16 and maintained at a pressure lower than atmospheric pressure, for example, at a level of 100 Torr. From the high-frequency power source 1 2 6 through the matching circuit 1 2 4, high-frequency energy such as 1 3.5 6 MHz is applied to the high-frequency antenna 16 2 in the antenna chamber 160. In this way, the inductance of the inductance component of the high-frequency antenna 16 2 acts on the processing chamber 10 2 a to form an electric field. The antenna chamber 1 60 is located at a position connected to the ceiling portion 10 2 b of the processing container 10 2. At the same time, the thickness of the antenna chamber 1 6 0 on the side opposite to the object to be processed 1 6 0 a is the same as before. The device can be made thinner compared to the previous device, that is, compared with the previous device, a stronger electric field can be formed in the processing chamber 10 2 a 'result' can produce a higher density in the processing chamber 1 02 a Plasma. The plasma generated in the processing chamber 10 2 a is used in this way, and the desired etching treatment is applied to the processing surface. The substrate L after the etching process is removed from the mounting lock chamber by the same procedure as the operation of the apparatus shown in FIG. 1, and a series of operations are ended. This paper size is applicable to China National Standard (CNS) A4 specification (210X-297) (Please read the notes on the back before filling out this page) • -Order-Printed by the Intellectual Property Bureau, Ministry of Economic Affairs, Consumer Cooperatives-19 -4368 7 1 at ^ -¾. ._B7_ V. Description of the invention (20) (Please read the precautions on the back before filling this page) 1 0 2 a, as long as there is a solid of the processing gas supply layer 2 1 0 Dielectric section. That is, although the loss of the electric field energy input from the high-frequency power source through the high-frequency antenna 1 2 0 cannot be completely avoided, the processing gas that does not exist from the gas path 2 1 2 is supplied to the processing chamber 1 0 2 a. A portion of the layer 2 10 is supplied with sufficient electric field energy. Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, for the following reasons, the gas path 2 1 2 and the high-frequency antenna 1 2 0 are the same for the placement of the mounting surface of the mounting surface 10 6 The center of the mounting surface is arranged to be substantially line-symmetrical or point-symmetrical. That is, the loss caused by the plasma of the processing gas in the gas path 2 1 2 is caused by the existence of the gas path 2 1 2 and the non-existent part by the high-frequency antenna 1 2 0 to the processing chamber 1 0 2 a. The electric field energy supplied is different. This is why the uniformity of the high-frequency-induced electric field formed by the high-frequency antenna 120 in the processing chamber 10 2 a is reduced. Yiliangkou, not only the projected area of the gas path 2 1 2 is reduced, but also the shape of the gas path 2 12 and the high-frequency antenna 1 2 0 is related to the center of the substrate L on the mounting table 106 (that is, the mounting surface). The center) becomes a substantially line-symmetrical or point-symmetrical configuration, which is helpful for the equalization of plasma and processing. In addition, the electric field energy supplied by the antenna 120 generates an intensity distribution slightly as shown in FIG. 11. As shown in FIG. 8 and FIG. 11, the antenna 12 has an inner peripheral portion 120 C and an outer peripheral portion 120 S, which are spaced apart from each other, and an intermediate portion 120M having no coil portion at all is formed. However, the electric field energy generated by the coordinated action of the inner peripheral portion 120C and the outer peripheral portion 120 S, as shown in Fig. 11, this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -23- 436871 A7 ____ B7 V. Description of the invention (21) 1 2 0M becomes the strongest in the middle. That is, if a gas passage 2 1 2 is provided directly below the intermediate portion 12 0M, the electric field energy passing through the intermediate portion 1 2 0M can be reduced. Thereby, the intensity of the electric field in the processing chamber 10 2 a is uniformized, that is, the processing gas and the volume can be uniformly plasmatized. FIG. 10 is a plan view showing a modified example of the processing gas supply layer of the etching apparatus shown in FIG. In this modified example, the processing gas supply layer 2 2 0 is composed of a panel of a dielectric system such as quartz, like the processing gas supply layer 1 18 d. A gas passage 2 2 2 is formed in the processing gas supply layer 2 2 0 and extends parallel to the mounting surface of the mounting table 106. A plurality of holes 222a are formed in the processing gas supply layer 220 by the gas passages 2 2 2 so as to be open to the mounting surface of the mounting table I 0 6. More specifically, the gas passage 2 2 2 is printed for the consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read # and note before you are jealous, this page). Point symmetrical shape. The gas passage 2 2 2 is a permeate flow control device (MF C) 1 3 2 and a pair of air inlets 224 connected to the processing gas source 130 and a pair of air inlets 22 4_ connected at right angles to each other. The body 2 2 6 is composed of a plurality of branches 2 2 8 whose ends are divergent. The air inlets 2 2 4, the multiple bodies 2 2 6, and the branches 2 2 8 have the same cross-sectional area such as a rectangular cross-section. The gas supply holes 2 2 2 a are arranged only at the ends of the branches 2 2 8 respectively. The conduction paths from the air inlet 224 of the gas passage 2 2 2 to the gas supply hole 2 2 2 a are the same. Thereby, the processing gas can be uniformly dispersed in the processing chamber 10 2 a. This paper size applies to Chinese National Standard {CNS) A4 specification (2I0X297 mm) -24-Printed by the Consumers' Cooperatives of the Central Government Bureau of the Ministry of Economic Affairs 4 3 6 8 7 1 α7 ___ Β7 V. Description of the invention (22) The characteristics related to the projected area and configuration of the gas path 2 1 2 or the conduction path of the gas path can also be applied to the high frequency antenna 1 2 0 arranged in a hollow antenna block as shown in FIG. 5, that is, the antenna A device in the chamber 160 or a device provided outside the processing container. The plasma processing apparatus according to the embodiment described with reference to FIGS. 7 to 10 has the following excellent functions and effects. In the plane arrangement of the mounting surface of the mounting table, the ratio of the area or the overlapping position of the gas path of the shower head and the high-frequency antenna can be used to suppress the mutual effect between the gas path and the high-frequency antenna and the high-frequency induced electric field Adverse effects. That is, the process gas is uniformly plasmatized, and the progress of dissociation of the process gas can be accurately controlled. In addition, by making the respective conduction paths from the air inlet of the gas passage to the gas supply hole the same, the processing gas can be uniformly dispersed in the processing chamber. Moreover, in each of the above-mentioned embodiments, the case where the LCD substrate is processed as an object to be processed is described. However, the present invention can also be applied to a processing apparatus using a semiconductor wafer as an object to be processed. The present invention is applied as an example of an etching apparatus, but the present invention is also applicable to various apparatuses using a plasma, such as an ashing apparatus or a plasma CVD apparatus. Brief Description of the Drawings Fig. 1 is a cross-sectional view of an etching apparatus for an LC substrate, which is an application of a plasma processing apparatus according to an embodiment of the present invention. This paper size applies to China National Standard (CNS) A4 specification (210X 297 mm) * 25- it '436d 7 1 A7 Printed by the Bayer Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy It is a schematic plan view showing a high-frequency antenna embedded in a dielectric body of the etching apparatus of FIG. 1. Fig. 3 is a plan view showing a process gas supply layer of the etching apparatus of Fig. 1; _ Fig. 4 is a plan view showing a modification example of the processing gas supply layer of the etching apparatus of Fig. 1. Fig. 5 is a cross-sectional view showing an application of a plasma processing apparatus according to another embodiment of the present invention, and an etching apparatus for an LC substrate; FIG. 6 is a schematic plan view showing a high-frequency antenna of the etching apparatus shown in FIG. 5. FIG. 7 is an application of a plasma processing apparatus according to still another embodiment of the present invention. Sectional view. Fig. 8 is a plan view showing the relationship between the high-frequency antenna of the etching apparatus shown in Fig. 7 and the processing gas path. Fig. 9 is a cross-sectional circle showing the relationship between the high-frequency antenna of the etching apparatus shown in Fig. 7A and the processing gas path. Fig. 10 is a plan view showing a modified example of the processing gas supply layer of the etching apparatus shown in Fig. 7. Fig. 11 is a schematic diagram showing the intensity distribution of the electric field energy emitted by the high-frequency antenna of the etching apparatus shown in Fig. 7. Fig. 12 is a schematic cross-sectional view showing a conventional high frequency induction combined plasma processing apparatus. Explanation of main component symbols (24) 1 0 2 a Airtight processing chamber 106 Mounting table 118 Antenna block 12 0 High frequency antenna 12 6 Power supply 13 6a Vacuum pump LLCD substrate (Please read the precautions on the back before filling this page) Staff of the Central Standards Bureau of the Ministry of Economic Affairs Consumption cooperatives Indian and Liban paper sizes apply Chinese National Standard (CNS) A4 specifications (210X297 mm) -27-