TW435004B - Miniaturization for impedance balun - Google Patents
Miniaturization for impedance balun Download PDFInfo
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- TW435004B TW435004B TW88108248A TW88108248A TW435004B TW 435004 B TW435004 B TW 435004B TW 88108248 A TW88108248 A TW 88108248A TW 88108248 A TW88108248 A TW 88108248A TW 435004 B TW435004 B TW 435004B
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發明領ΜInvention collar
值心！ί，發月為一個在電子系統中，將平衡式與非平衡式 傳輸線或裝置f jjg 4Φ U flB . y 置互相轉換的一種電路。更具體而言，這個發 ，，” 一固多層化平衡至非平衡轉換電路，且被應用於行動 通訊設備，諸如行動電話或無線電話。 先前技藝之；1¾彿 一個平衡至非平衡式轉換器（balun)之最典型應用為將一 個兩線式之平衡電路（如行動電話_之電路），轉換成非平 衡式之單線電路（如天線）。以下參考文獻完整地提供有關 平#至非平衡式轉換器之背景資料。 [1] U.S. Patent No. 4,994,755 to Titus et al., entitled 'Active Baiun," February 19, 1991; [2] U,S. Patent No. 5,039,891 to ffen et al., entitled "Planar Broadband FET Baiun," August 13, 1991 ; [3] U.S. Patent No. 5,574,411 to Apel et al., entitled "Lumped Parameter Baiun," November 12， 1 996; [4] S. A. Maas, "Microwave Mixers", Artech House, pp 244-255; [5] U.S. Patent No. 5,455,545 to Garcia, entitled "Compact Low-loss Microwave Baiun," October 3， 1 9 9 5;Worth it! ί, Fayue is a circuit that converts balanced and unbalanced transmission lines or devices f jjg 4Φ U flB. y to each other in an electronic system. More specifically, this issue, "A solid multi-layer balanced-to-unbalanced conversion circuit is used in mobile communication equipment, such as mobile phones or radiotelephones. Prior art; 1¾ Buddha a balanced-to-unbalanced converter The most typical application of (balun) is to convert a two-wire balanced circuit (such as the circuit of a mobile phone) into an unbalanced single-wire circuit (such as an antenna). The following references provide complete information about flat # to unbalanced Background information of the digital converter. [1] US Patent No. 4,994,755 to Titus et al., Entitled 'Active Baiun, " February 19, 1991; [2] U, S. Patent No. 5,039,891 to ffen et al., entitled " Planar Broadband FET Baiun, " August 13, 1991; [3] US Patent No. 5,574,411 to Apel et al., entitled " Lumped Parameter Baiun, " November 12, 1 996; [4] SA Maas, " Microwave Mixers ", Artech House, pp 244-255; [5] US Patent No. 5,455,545 to Garcia, entitled " Compact Low-loss Microwave Baiun, " October 3, 1 9 9 5;
13^004 ¾ 五、發明說明（2) [6] U.S. Patent No. 4,725,792 to Lampe, Jr., entitled "Wideband Baiun Realized By Equal-Power Divider and Short Circuit Stubs," February 16, 1988 ; [7] U.S. Patent No. 4,460,877 to Sterns, entitled "Broad-Band Printed-Circuit Baiun Employing Coupled Strip All Pass Filter," July 17, 1984; [8] U.S. Patent No. 5,497,137 to Fujiki, entitled "Chip Type Transformer," March 5, 1994; [9 ] D.S. Patent No. 5,025,232 to Pavio, entitled "Monolithic Multilayer Planar Transmission Line," January 18, 1991； [10] U.S. Patent No. 4,847,626 to Kahler et al., entitled "Microstrip Ba1un-Antenna," July 11, 1989; and [11] U.S. Patent No. 4,755,775 to Marczewski et al., entitled "Microwave Baiun for Mixers and Modulators, " July 5, 1 988, 一個平衡至非平衡式轉換器為一個平衡式之網路或電 子電路，其功能在於將一個非平衡式轉換至平衡式，亦或平 衡轉換至非平衡之操作，並且具有很低之傳輸損耗及很寬 之阻抗轉換比^ 一個平衡至非平衡式轉換器最常被使用於 連接設備及傳輸線，或連接傳輸線及天線。一個平衡至非-平衡式轉換器也能使用於連接非平衡式輸入至平衡式輸13 ^ 004 ¾ V. Description of the Invention (2) [6] US Patent No. 4,725,792 to Lampe, Jr., entitled " Wideband Baiun Realized By Equal-Power Divider and Short Circuit Stubs, " February 16, 1988; [7] ] US Patent No. 4,460,877 to Sterns, entitled " Broad-Band Printed-Circuit Baiun Employing Coupled Strip All Pass Filter, " July 17, 1984; [8] US Patent No. 5,497,137 to Fujiki, entitled " Chip Type Transformer , " March 5, 1994; [9] DS Patent No. 5,025,232 to Pavio, entitled " Monolithic Multilayer Planar Transmission Line, " January 18, 1991; [10] US Patent No. 4,847,626 to Kahler et al., entitled " Microstrip Ba1un-Antenna, " July 11, 1989; and [11] US Patent No. 4,755,775 to Marczewski et al., entitled " Microwave Baiun for Mixers and Modulators, " July 5, 1 988, one balance to An unbalanced converter is a balanced network or electronic circuit whose function is to convert an unbalanced to a balanced or balanced to unbalanced operation And has a very low transmission loss and a wide impedance conversion ratio ^ A balanced-to-unbalanced converter is most often used to connect equipment and transmission lines, or to connect transmission lines and antennas. A balanced-to-unbalanced converter can also be used to connect an unbalanced input to a balanced input
4 350 0 4 ^ 五、發明說明（3) ' --.一 :，或者反之；連接一個平衡式激發源至一個非平衡式之負， =二線：：至非平衡式轉換器亦可將一個非平衡式之 輸入傳輸線轉換成一對平衡式之輸出傳輸線， 有相等大小之信號但相角差18〇度。再則平 ：：轉 換器亦可將具有相黧女，丨s ^ 1 〇 η ^ l- , 、，且相角差1 8 0度之一對平衡的非 ' 兩π之“號相加再轉至一個非平衡式之單一輪 出，亦即將兩個平衡之信號組合送至另一個單—之輸出， 蜂。 個平衡式傳輸線一般而言，有二條非常靠近之電流 :徑’各個路徑具有相同之對地傳輸特性阻抗，因此就物理 觀點而a，在兩條路徑上之電流，大小相等，方向卻相反。 ，為這兩個路徑彼此非常#近，所以在空間中除路徑附近 所严電磁場幾乎互相抵銷。一個平衡式之架構在平衡 式之混波器，調變器，衰減器，開關，或差動放大器等等往往 ，必須的，因為此種架構可提供較好之電路間隔絕度，動態 ，圍’、及雜訊和偽頻信號（spuri〇us signal)之抵銷。因為 ^ 平衡式之負載’其電路行為不會因信號之極性改變而 根據作法，平衡至非平衡式轉換器可以被區分為兩 ^頁’即主動式及被動式。在文獻[丨]及[2]中之主動式平衡 ¥平衡式轉換器由一些電晶體元件（所謂主動元件）所建 而成。雖然主動式平衡至非平衡式轉換器在尺寸上非常 小^但基於下述理由並不常用。首先，主動電路耗損電能， 在仃動電話系統中這是一大弊病，再則主動元件即為雜訊4 350 0 4 ^ V. Description of the invention (3) '-. 1: or vice versa; connect a balanced excitation source to an unbalanced negative, = two-wire :: to an unbalanced converter An unbalanced input transmission line is converted into a pair of balanced output transmission lines with signals of equal magnitude but a phase angle difference of 180 degrees. Then it is flat: The converter can also add a balanced non-'two π 'sign with a phase pair, s ^ 1 〇η ^ l-, and a phase angle difference of 180 degrees. Go to an unbalanced single round out, that is, send the combination of two balanced signals to another single-output, bee. A balanced transmission line Generally speaking, there are two currents that are very close: each path has The same characteristic transmission impedance to ground, so from a physical point of view, a, the currents on the two paths are equal in magnitude, but the directions are opposite. Because these two paths are very close to each other, it is strict in space except near the path. Electromagnetic fields almost offset each other. A balanced architecture is often necessary in balanced mixers, modulators, attenuators, switches, or differential amplifiers, because this architecture can provide better circuit spacing Absolute, dynamic, ambient ', and noise and spurioos signal offset. Because ^ balanced load' its circuit behavior will not be balanced to unbalanced according to the practice due to the polarity change of the signal Converter can be zoned Divided into two ^ pages, namely active and passive. The active balance ¥ balance converter in the literature [丨] and [2] is built by some transistor components (so-called active components). Although active balance The unbalanced converter is very small in size ^ but it is not commonly used for the following reasons. First, the active circuit consumes power. This is a major drawback in mobile phone systems, and then the active component is noise.
第7頁 4 35004 , 五、發明說明（4) 源，使用主動式平衡至非平衡式轉換器會增加系統之雜訊 指數，另外只有在半導體製程下方能生產低成本之主動式 平衡至非平衡式轉換器，也因此，被動式平衡至非平衡式轉 換器一般而言較為廣泛使用。而被動式平衡至非平衡式轉 換器也可歸為三種類型，如集總式（1 umpec[_type )，繞線式 (coil-type),及分佈式（distributed-type)，以下將就各 類加以說明。 在文獻[3]及[4]中為集總式平衡至非平衡式轉換器。 集總式平衡至非平衡式轉換器為利用集總電容及電感組農 而成。其優點為尺寸小，及適合於低頻之應用。但另—方 面’表高頻應用上（十億赫茲以上），其性能往往甚差。這主 要肇因於集總7C件在高頻時損耗過大，及寄生效應難以掌 控。一般而言其操作頻寬不大（<10%)。 繞線式平衡至非平衡式轉換器在較低頻帶及 UHPCUltfa IUgh Frequency)頻帶最廣泛被使用。其主要 缺點為在超過UHF頻帶時之應用損耗過大以及縮小化程度 已達極限。 至於分佈式平衡至非平衡式轉換器有非常多之類型。第一 種為文獻[4]及[5]中所描述之18〇度混成型。其由數節四 分之一波長之傳輸線節及一戴二分之一波長傳輸線節所組 成’其主要缺點為尺寸太大，及不易作阻抗轉換比大的應 用’以及在不增加額外電路下只限於產生一對平衡之非平 衡傳輸^線’而非一平衡式負載或傳輸線。第二種為文獻[6] 及[7所描述為組合一功率分配器及一丨80度相移器而Page 7 4 35004, V. Description of the invention (4) Source, the use of active balanced-to-unbalanced converters will increase the noise index of the system. In addition, only low-cost active balanced-to-unbalanced products can be produced under the semiconductor process. Therefore, passive balanced-to-unbalanced converters are generally widely used. Passive balanced-to-unbalanced converters can also be classified into three types, such as lumped (1 umpec [_type), coil-type, and distributed-type. Class. In literatures [3] and [4], they are lumped balanced-to-unbalanced converters. Lumped balanced-to-unbalanced converters are made using lumped capacitors and inductors. Its advantages are small size and suitable for low frequency applications. But on the other hand, in high-frequency applications (above a billion hertz), their performance is often poor. This is mainly due to the excessive loss of lumped 7C components at high frequencies and the difficulty in controlling parasitic effects. Generally speaking, its operating bandwidth is not large (< 10%). Wire-wound balanced-to-unbalanced converters are most widely used in lower frequency bands and UHPCUltfa IUgh Frequency) bands. The main disadvantages are the excessive application loss when exceeding the UHF band and the degree of reduction has reached the limit. There are many types of distributed balanced-to-unbalanced converters. The first is the 180-degree hybrid molding described in [4] and [5]. It consists of several quarter-wavelength transmission line sections and one-half-wavelength transmission line sections. The main disadvantages are that the size is too large and it is not easy to use for large impedance conversion ratios. It is limited to generating a pair of balanced unbalanced transmission lines, rather than a balanced load or transmission line. The second is described in [6] and [7 as a combination of a power divider and a 80 degree phase shifter.
435004ί 五、發明說明（5) 成。1 8 0度相位移乃藉由兩條相差二分之一波長且具有相 同之阻抗傳輸線所產生，也因此這型平衡至非平衡式轉換 态尺寸仍嫌過大。第三種為文獻[8]-[11]中所描述之馬氏 平衡至非平衡式轉換器，這一型具有非常大之操作頻寬（往 往數倍頻，視阻抗轉換比而定）。而且其相位及信號大小之 平衡度亦極佳。再則，其不僅可應用以產生一對平衡之非 平衡傳輸線，亦可直接接至一平衡式負載或平衡式傳輸 線。 圖一所示為馬氏平衡至非平衡式轉換器，其等效電路則顯 示如圖二。在圖一中平衡至非平衡式轉換器1〇由如下述方 式 '纟i成，在基板12上為一節金屬線14，在中間層基板13上有 兩卽金屬線16, 17，在最上層金屬線14則由一個較窜金屬線 節1 4 -1及較寬金屬線節1 4 - 2所構成，中間層金屬線1 6則位 於較窄金屬線節14-1之正下方，而中間層金屬線17則位於 較寬金屬線節14-2之正下方。而接地金屬片18則位於介質 層13之底面。最上層金屬線14在長度上為連續，而中間廣 金屬線1 6, 1 7則彼此絕緣，並在結構正中央處而一個平衡間 隙G(balance p〇int gap)，在金屬線16，17之兩側端點則有 穿孔15連接至接地面18。一個負載可藉由兩條微帶線 及1了-1連接至平衡間隙G，金屬線16-1及17-1之端點即為平 衡埠（BP)。而金屬線η之兩端點則可擇一為非平衡蜂 (UBP)，這兩端點之擇一選擇則視阻抗轉換比而定。在長度 方面，金屬線16及17皆為四分之一波長，而最上層金屬線14 中連接至非平衡埠的部分則主控著阻抗轉換比。這個部分435004ί 5. Description of the invention (5). The 180 degree phase shift is caused by two transmission lines with a half wavelength difference and the same impedance, so the size of this balanced-to-unbalanced transition state is still too large. The third is the Markov balanced-to-unbalanced converter described in [8]-[11]. This type has a very large operating bandwidth (usually multiples, depending on the impedance conversion ratio). In addition, the phase and signal balance are excellent. Furthermore, it can be applied not only to produce a pair of balanced unbalanced transmission lines, but also directly to a balanced load or a balanced transmission line. Figure 1 shows a Markov balanced-to-unbalanced converter, and its equivalent circuit is shown in Figure 2. In FIG. 1, the balanced-to-unbalanced converter 10 is formed as follows: a metal wire 14 is provided on the substrate 12, and two metal wires 16, 17 are provided on the intermediate layer substrate 13, in the uppermost layer. The metal wire 14 is composed of a more channeled metal wire section 1 4 -1 and a wider metal wire section 14-2. The middle layer metal wire 16 is located directly below the narrower metal wire section 14-1 and the middle The layer metal wire 17 is located directly below the wider metal wire joint 14-2. The ground metal sheet 18 is located on the bottom surface of the dielectric layer 13. The uppermost metal wire 14 is continuous in length, while the middle wide metal wire 1 6, 17 is insulated from each other, and there is a balance gap G (balance gap) at the center of the structure. At the metal wires 16, 17 Perforations 15 are connected to the ground plane 18 at both end points. A load can be connected to the balancing gap G by two microstrip lines and 1-1, and the ends of the metal lines 16-1 and 17-1 are the balanced ports (BP). One of the two ends of the metal line η can be selected as an unbalanced bee (UBP), and the choice of the two ends depends on the impedance conversion ratio. In terms of length, the metal wires 16 and 17 are each a quarter wavelength, and the part of the uppermost metal wire 14 connected to the unbalanced port controls the impedance conversion ratio. This part
五、發明說明（6) 相當於四分之一波長阻抗轉換器。上述之平衡至非平衡轉 換器主要缺點乃在於尺寸稍嫌過大（大約二分之—波長）， 在射頻應用並不適合，在文獻[8]中利用鑛齒及螺旋狀折曲 將馬氏平衡至非平衡轉換器縮至晶片式大小，然而由於大 量縮小面積所產生之電路不連續將造成信號能量之耗損。 發明概述 本 換器之 用鑛齒 採忐下 一個介 為一内 此兩條 則位於 端點則 介質層 面接於 個頂面 好疊於 端為非 三條線 二組具 之分布 發明之主要目的在於縮小傳統馬氏平衡至非平衡轉 尺寸，而另一目的則用以減少為縮小電路面積所使 及螺旋之數目，為了清楚說明見，以下所有實施例皆 往上之方式說明，本發明之第一實施例說明如下第 質層有上下兩表面’下表面為金屬接地面，上表面 層金屬層，此一金屬層上有第一及第二條金屬線 絕緣之金屬線由一個平衡間隙點分開，平衡式端點 平衡間隙點之兩側’同時此兩條金屬線之另外兩個 接到金屬接地面，在第一介質層上，有另—個第一層 堆疊在上，並有上下兩表面，此第二介質層之下表 上述之内層金屬層，而在此第二介質層上表面有一 金屬層，這個金屬層上有第三條金屬線，此第:5. Description of the invention (6) Equivalent to a quarter-wavelength impedance converter. The main disadvantage of the above-mentioned balanced-to-unbalanced converter is that the size is a bit too large (about two-half of a wavelength), which is not suitable for RF applications. In [8], ore teeth and spiral bending were used to balance Markov to non- The balance converter is shrunk to the chip size, but the circuit discontinuity due to a large reduction in area will cause a loss of signal energy. Summary of the invention The mining teeth used in this converter are the next one, the two are located at the end point, the medium level is connected to the top surface, and the end is a non-three line and two sets of distribution. The main purpose of the invention is to The traditional Markov balance is reduced to the unbalanced transfer size, and the other purpose is to reduce the number of spirals used to reduce the circuit area. For the sake of clarity, all the following embodiments are described in the above manner. An embodiment is described as follows. The first quality layer has two upper and lower surfaces. The lower surface is a metal ground plane and the upper surface is a metal layer. This metal layer has first and second metal wires. The insulated metal wires are separated by a balance gap point. On both sides of the balanced end point of the balanced end point. At the same time, the other two of the two metal wires are connected to the metal ground plane. On the first dielectric layer, there is another first layer stacked on top, and there are two upper and lower layers. On the surface, the inner metal layer described above is below the second dielectric layer, and there is a metal layer on the upper surface of the second dielectric layer, and there is a third metal line on this metal layer.
前述第一及第二條金屬線之上，這一條金屬線之一i 平衡輸出輸入端點，而另一端則為開路。另外、宮 由第一組具有不同阻抗值串接而成的傳輸線/、及-有不同阻抗值串接而成的傳輸線節所構 P 何攻，而p且技- 對結構中心而言則成鏡相分布，另外前 <弟一條金Above the first and second metal wires, one of the metal wires i balances the input and output terminals, and the other end is open. In addition, the palace consists of the first group of transmission lines with different impedance values connected in series, and-the transmission line section composed of different impedance values in series constituted by P, and p and technology-for the center of the structure, Mirror phase distribution, another former < one brother
435004^ 五、發明說明（7) 屬線之阻抗特性對結構中心而言，與第二條金屬線亦互成· 鏡相分佈，此一實施例之信號大小及相位之平衡即藉由上 述之第一及第二條金屬線及第三條串接而成之金屬線間鏡 相關係而達成。 接著將深入描述第一實施例可能演生之不同架構。 第一種演生架構，為第一實施例中第三條金屬線中之第一 組由不同阻抗線串接而成之金屬線，其第一部分及 分具有不同寬度，產生步階式阻抗接合，而第一部分較靠°近 電路結構中心且寬度較第二部分為窄，而第二組由不同阻 抗線串接而成之金屬線，亦由兩部分組成，稱為第三及第四 部分，而這兩部分亦具有不同寬度，產生步階式阻抗接合， 而第二部分較靠近結構中心，且寬度亦較第四部分為窄。 第二種演生架構，為第一實施例中第三條金屬線中之 第一植由不同阻抗線串接而成之金屬線，其第一部分及第 :部分具有不同寬度，產生步階式阻抗接合而第一部分較 罪近電路結構中心且寬度較第二部分為寬，而第二組由不 同阻，、=串接而成之金屬線，亦由兩部分組成，稱為第三及 2四部分^而這兩部分亦具有不同寬度，產生步階式阻抗接 〇 ’而第二部分較靠近結構中心，且寬度亦較第四部分為 寬。 第三種演生架構為前述第一條金屬線及第二條金屬線由兩 ，利用不同阻抗值串接而成之傳輸線節所構成，稱之為第 <第、·且’這兩組之阻抗分佈對結構中心而言，互成鏡相 對稱，此第三組由不同阻抗線•接而成之金屬線，亦由兩部435004 ^ V. Description of the invention (7) The impedance characteristic of the line belongs to the center of the structure. It also forms a mirror phase distribution with the second metal line. The signal size and phase balance of this embodiment are determined by the above. The mirror relationship between the first and second metal wires and the third metal wire connected in series is achieved. Next, the different architectures that may arise from the first embodiment will be described in depth. The first evolutionary structure is the first group of the third metal wires in the first embodiment. The first group of metal wires is formed by connecting different impedance wires in series. The first part is closer to the center of the circuit structure and the width is narrower than the second part. The second group of metal wires connected in series by different impedance lines is also composed of two parts, called the third and fourth parts. The two parts also have different widths, resulting in a stepped impedance junction, while the second part is closer to the center of the structure and the width is narrower than the fourth part. The second evolutionary structure is a metal wire in which the first one of the third metal wires in the first embodiment is serially connected with different impedance wires. The first part and the second part have different widths and generate step patterns. Impedance bonding, the first part is closer to the center of the circuit structure and the width is wider than the second part, and the second group of metal wires made of different resistances, = is also composed of two parts, called the third and 2 Four parts ^ and these two parts also have different widths, resulting in a stepped impedance connection 0 ', while the second part is closer to the center of the structure, and the width is also wider than the fourth part. The third evolutionary structure is that the first metal line and the second metal line are composed of two transmission line segments connected in series by using different impedance values, which are referred to as the < The impedance distribution is symmetrical to the center of the structure. This third group of metal wires made of different impedance wires is also composed of two parts.
第11頁 4ss〇O4^ 五、發明說明（8) 分組成，稱為第五及第六部分，而這兩部分亦具有不同寬 度，產生步階式阻抗接合，而第五部分較靠近結構中心且 寬度亦較第六部分為窄。而第四組由不同阻抗線_接而成 之金屬線，亦由兩部分組成，稱為第七及第八部分 部分亦具有不同寬度，產生步階式阻抗接合，而第七部分較 靠近結構中心，且寬度亦較第八部分為窄。上述各部分所 具有不同阻抗特性之線節能夠用以達成非平衡琿及平衡谭 之間的阻抗匹配。 第四種演生架構為前述第一條金屬線及第二條金屬線 由兩組利用不同阻抗值串接而成之傳輸線節所構成，稱之 為第三及第四組，這兩組之阻抗分佈對結構中心而言互成 鏡相對稱，此第三組由不同阻抗線串接而成之金屬線|亦由 兩部分Μ成，稱為第五及第六部分而這兩部分亦具有不同 寬f’產生步階式阻抗接合，而第五部分較靠近結構中心 較第六部分為t。而第四組由不同阻抗線串i，而 成之金屬線’亦由兩部分組成，稱為第七及第八 不同η產生步階式阻抗接合，而第，:部分 構令心，且寬度亦較第八部分為寬。上述 =具有π flH且抗特性之線節能夠用以 埠之間的阻抗匹配。 X邛十衡埠及千衡 第五種演生架構，在最上層第 入第四條金屬蠄馀金屬線之中間插 片成 鸯線’亦即插入在第一組及第二細蝻夕„〜你 四條線之功用右热分 ，、且線之間’這第 在於減低在平銜問陶（jb$ \ ^ ^ 之效應。 W間晚Λ旱）之^號平衡度退化-Page 11 4ss〇O4 ^ V. Description of the invention (8) Sub-composition, called the fifth and sixth parts, and these two parts also have different widths, resulting in stepped impedance bonding, and the fifth part is closer to the center of the structure And the width is narrower than the sixth part. The fourth group of metal wires connected by different impedance lines is also composed of two parts, which are called the seventh and eighth parts. They also have different widths, resulting in stepwise impedance bonding, and the seventh part is closer to the structure. Center, and the width is narrower than the eighth part. The sections with different impedance characteristics in the above sections can be used to achieve impedance matching between unbalanced and balanced channels. The fourth generation structure is the first metal line and the second metal line, which are composed of two sets of transmission line segments connected in series with different impedance values. They are called the third and fourth sets. The impedance distribution is symmetrical to each other at the center of the structure. This third group of metal wires are connected in series by different impedance lines. It is also composed of two parts M, called the fifth and sixth parts. These two parts also have Different widths f 'produce stepped impedance junctions, while the fifth part is closer to the center of the structure than the sixth part is t. The fourth group of metal wires, which are formed by different impedance line strings i, is also composed of two parts, called the seventh and eighth different η to produce stepwise impedance bonding, and the first: part constructs the heart, and the width It is also wider than the eighth part. The wire link with π flH and impedance characteristics can be used for impedance matching between ports. X 邛 ten Hengbu and Qianheng ’s fifth kind of performance architecture, insert the middle piece of the fourth metal surplus metal wire at the uppermost layer into a stern line, that is, insert it into the first group and the second fine line. ~ The power of your four lines uses the right heat score, and between the lines' this is to reduce the effect of the flat title question (jb $ \ ^ ^. W 间 晚 Λ 旱) degrades the balance of ^-
' 4 五、發明說明'' 4 V. Description of the invention
第六種演生架播达 晶片式電容、為在最上層之第三條金屬線之令間接上一 铯七鍤，¾ Γ’而電容之另一端點則接到接地金屬面。 第七禋决生靼进* 大旅nn 、辱為將各條金屬線安排成矩齒狀或螺旋狀。 兩表面， 罘二實施例說明如下，第一個介質層有上下 此一金屬屏，面為金屬接地面，上表面為一内層金屬層， 線由一個平你有第一及第二條金屬線，此兩條絕緣之金屬 之兩侧，5衡間隙點分開，平衡式端點則位於平衡間隙點 ί&同時此兩條金屬線之另外兩個端點則接到金屬接 地面，在第一在呀保， , 質層上，有另一個第二層介質層堆疊在上， .Μ 兩表面’此第二介質層之下表面接於上述之内層 π AS’a而在此第二介質層上表面，有一個頂面金屬層，這 v g 一 s ^有第三條金屬線，此第三條金屬線正好疊於前 ^ 及苐—條金屬線之上，這一條金屬線之一端為非平 衡輸出輸入端點，而另一端則為開路。在第二介質層上有 ^個第二層介質層堆疊在上，並有上下兩表面，此第三 |質層之下表面接於上述之頂面金屬層，而在此第三介質 層上表面，有一個頂面接地金屬層。另外前述第三條線由 第一組具有不同阻抗值串接而成的傳輸線節及第二組具有 不同阻抗值串接而成的傳輸線節所構成而阻抗之分布對 結構中心而言則成鏡相分布，另外前述第一條金屬線之阻 抗特性對結構中心而言’與第二條金屬線亦互成鏡相分佈’ 此—實施例之信號大小及相位之平衡即藉由上述之第一及 第二條金屬線及第三條串接而成之金屬線間鏡相關係而達. 成。在第二實施例’同樣存在如第一實施所演生之各式變The sixth type of live frame broadcast chip-type capacitor is a third metal wire on the uppermost layer, which indirectly loads a cesium sulphide, ¾ Γ ′, and the other end of the capacitor is connected to the ground metal plane. The seventh finalist advances * The Great Brigade nn, disgracefully arranges each metal wire into a rectangular or spiral shape. The two embodiments are described as follows. The first dielectric layer has a metal screen above and below, the surface is a metal ground plane, and the upper surface is an inner metal layer. The line consists of one flat and you have the first and second metal lines. On both sides of the two insulated metals, the 5-point gap point is separated, and the balanced end point is located at the equilibrium gap point. At the same time, the other two ends of the two metal wires are connected to the metal ground plane. In Yabao, there is another second dielectric layer stacked on top of the quality layer, .M on both surfaces' the lower surface of this second dielectric layer is connected to the inner layer π AS'a above and the second dielectric layer On the upper surface, there is a top metal layer. This vg s ^ has a third metal wire, which is superimposed on the front ^ and 苐 —a metal wire. One end of this metal wire is not Balanced output and input endpoints, while the other end is open. On the second dielectric layer, there are ^ second dielectric layers stacked on top of each other, and there are upper and lower surfaces. The lower surface of the third | mass layer is connected to the top metal layer, and on this third dielectric layer. On the surface, there is a top ground metal layer. In addition, the aforementioned third line is composed of the first group of transmission line sections connected in series with different impedance values and the second group of transmission line sections connected in series with different impedance values, and the impedance distribution is a mirror to the center of the structure Phase distribution, in addition, the impedance characteristic of the aforementioned first metal line is 'in mirror-phase distribution with the second metal line' to the center of the structure. This—the signal size and phase balance of the embodiment is obtained by the aforementioned first And the second metal wire and the third metal wire connected in series mirror relationship. In the second embodiment, there are also various variations as the first embodiment
第13頁 4350 04-^Page 13 4350 04- ^
形架構。 本發明之第三類實施例說明如下’第一 面，下表面為金厲接地面，而第-介質層之上L = i 金屬層，一個第一條及第二條之金屬線位於此 ;互：絕緣，…個平衡間隙點隔開，這個平衡間二層是 用=連接平衡之輸入或輪出用，而這第一條及第二 述之金ί層上有另外第三條金…第 屬線，與第-條及第二條金屬線平行並且分開一段距離1 第二條金屬線之一端為非平衡輸出輸入點，而另一端為開 路，而在上述金屬層上有另外第四條及第五條金屬線這第 四條及第五條金屬線亦與第三條金屬線平行且分開二段距 離，並且亦有一個平衡間隙，而且另外兩端也連接至接^金 屬面，在結構上第一，二條金屬線以第三條金屬線為令心與 第四，五條互為對稱。而上述之第一條及第四條金屬線與、 第二條及第五條金屬線則藉數個連接細線（b〇nd wires )等 電位。另外前述第三條線由第一組具有不同阻抗值串接而 成的傳輸線節及第二組具有不同阻抗值_接而成的傳輸線 節所構成，而阻抗之分布對結構中心而言則成鏡相分布，另 外前述第一條（第四條）金屬線之阻抗特性對結構中心而 言，與第二條（第五條）金屬線亦互成鏡相分佈，此一實施例 之信號大小及相位之平衡即藉由上述之第—五條串接而 成之金屬線間鏡相關係而達成。在第三實施例’同樣存在-如第一實施所演生之各式變形架構。Shape structure. The third embodiment of the present invention is described as follows: 'First side, the lower surface is a gold ground plane, and L = i metal layer above the first dielectric layer, a first and a second metal wire are located here; Mutual: Insulation, ... separated by a balance gap point. The second layer of this balance is used to connect the input or wheel output of the balance, and there is another third piece of gold on the first and second layers of gold. The first line is parallel to the first and second metal lines and separated by a distance of one. One end of the second metal line is an unbalanced output input point, and the other end is an open circuit, and there is another fourth on the above metal layer. And fifth metal wires The fourth and fifth metal wires are also parallel to the third metal wire and separated by two distances, and there is also a balance gap, and the other ends are also connected to the metal surface. Structurally, the first and second metal wires are symmetrical with the fourth and fifth metal wires with the third metal wire as the center. The first and fourth metal wires and the second and fifth metal wires mentioned above are equipotentially connected by a plurality of connecting wires. In addition, the aforementioned third line is composed of a first group of transmission line segments with different impedance values in series and a second group of transmission line segments with different impedance values. The distribution of the impedance is Mirror phase distribution. In addition, the impedance characteristics of the first (fourth) metal line are structurally mirrored to the second (fifth) metal line. The signal size of this embodiment The balance of phase and phase is achieved by the above-mentioned fifth-five serially connected metal wire mirror relationship. The third embodiment 'also exists-as in the first embodiment, a variety of modified architectures are generated.
第14頁 4 35Φ〇4'.| 五、發明說明（11) 圖式之簡要說明 圖一’為習知馬氏平衡至非平衡轉換器之概要圖。 圖二，為圓一之等效電路。 圖三U)，為本發明第一實施例之等效電路圖。 圖一（Β)’圖二（C)，為圖三（a)之更深入之分解圖。 圖四，為圖三（Α)之變型架構。 圖五（Α卜圖八為圖三（Α)應用於多層微帶線之各種實 体結構。 圖五（Β)及圖五（C)為圖五（Α)之變型架構。 圖九-圖十二為圖三（人）應用於多層帶狀線之各種實体 結構。 圖十二〜圖十四為圖三（Α)利用多條同層耦合線來達成 強耦合之實体結構。 圖十五，為圖五（Α)中之金屬線之曲折形狀。 圖十六，為圖五（Α)中之金屬線之螺旋式形狀〇 發明之詳細說明 圖二（Α)為本發明第一實施例之等效電路，而圖三（β) 將耦合傳輸線分解成單一傳輸線。 在圖三（Α)，馬氏平衡至非平衡轉換器3〇包含一個上金 屬線34(相當於圖（二）之金屬線14)，及下金屬線36與38所· 组成之輛合傳輸線組（相當於圖（二）之金屬線16及I?)。Page 14 4 35Φ〇4 '. | V. Description of the invention (11) Brief description of the drawings Figure 1' is a schematic diagram of a conventional Markov balanced-to-unbalanced converter. Figure 2 shows the equivalent circuit of circle one. FIG. 3U) is an equivalent circuit diagram of the first embodiment of the present invention. Figure 1 (B) 'and Figure 2 (C) are further exploded views of Figure 3 (a). FIG. 4 is a modified structure of FIG. 3 (A). Figure 5 (AB) Figure 8 shows various physical structures of Figure 3 (A) applied to multi-layered microstrip lines. Figure 5 (B) and Figure 5 (C) are modified structures of Figure 5 (A). Figure 9-Figure 10 The second is the physical structure of Figure 3 (person) applied to the multi-layer strip line. Figure 12 ~ Figure 14 are the physical structure of Figure 3 (A) using multiple coupling lines at the same layer to achieve strong coupling. Figure 15, It is the zigzag shape of the metal wire in Fig. 5 (A). Fig. 16 is the spiral shape of the metal wire in Fig. 5 (A). Detailed description of the invention Fig. 2 (A) is a first embodiment of the present invention Equivalent circuit, and Figure 3 (β) decomposes the coupled transmission line into a single transmission line. In Figure 3 (A), the Markov balanced-to-unbalanced converter 30 includes an upper metal line 34 (equivalent to the metal in Figure 2). Line 14), and the transmission line group consisting of the lower metal lines 36 and 38 (equivalent to metal lines 16 and I? In Figure (II)).
第15頁 α 〇5Q；〇4%|，； 五、發明說明（12) 在圖三（Α)中之上金屬線34，由n + m截線段Tlk，k = 〇,…，η及 T2j，j = 〇> ···，！!！串接而成，下金屬線36及38亦由n + m載線段 Uk， k = 0，…，n(36)及I2j，j=0，…，πι(38)串接而成，而平衡 間隙點（平衡輸出，輸入埠）則被安排於11 0及I 2 0之間。上 述之T1 k及Τ2 j當k= j時，具有完成相同之物理結構，如長， 寬，間隙等，同樣地11 k及I 2 j在k = j時亦然。在圖形三（A )中 端點01及03，其中一端為開路，另一端則定義為非平衡埠， 而下金屬線3 6，3 8之兩端點〇 2及0 4則接地，至於平衡埠則置 於3 1及3 2間。假如我們設m = n，並且將非平衡埠換成開路， 則整個電路結構將呈對稱，由於能量由金屬線3 4輸入，而〇 1 又爲開路，所以電路中心點可以近似假設成一個短路或電 踏，這樣的對稱造成埠31及埠32互為映像，也因此本發明之 平衡至非平衡轉換器30之相位平衡及信號大小平衡在這樣 映像關係下，顯得相當良好。 本發明之平衡至非平衡轉換，可應用於具有不同特性 阻抗之輸出輸入，亦即非平衡埠及平衡埠之特性阻抗可以 不一樣，而這樣的阻抗匹配可以由圖三（Α)中之步階阻抗安 排之耦合傳輸線來達成，以下將詳述其原理a 首先，我們近似地假設有一電牆放置在圖三（A)及（g) 之中心處如虛線所示。這樣的近似在前述對稱性安排之下 是合適的。而且能較清楚描述本發明之阻抗匹配之原理。 在上述電牆對稱之假設下，阻抗匹配之原理可從電牆左半 部電路分析推論而得，在討論阻抗匹配之前，首先說明從圖. 三（A)等效電路轉至圖三（B)之等效電路只有在圖三（A)中Page 15 α 〇5Q; 〇4% | ,; V. Description of the invention (12) The metal line 34 is shown in FIG. , J = 〇 > ··· ,! !!!! The lower metal wires 36 and 38 are also connected by n + m line segments Uk, k = 0, ..., n (36) and I2j, j = 0, ..., π (38), and balanced. The gap point (balanced output, input port) is arranged between 11 0 and I 2 0. The above-mentioned T1 k and T2 j have the same physical structure, such as length, width, gap, etc., when k = j. Similarly, 11 k and I 2 j are also the same when k = j. In figure three (A), the end points 01 and 03, one end of which is open, the other end is defined as an unbalanced port, and the two ends of the lower metal wires 3 6, 3 8 are grounded, as for balance The ports are placed between 31 and 32. If we set m = n and replace the unbalanced port with an open circuit, the entire circuit structure will be symmetrical. Since the energy is input by the metal wire 3 4 and 〇1 is an open circuit, the center point of the circuit can be approximately assumed as a short circuit. Or electric pedal, such symmetry causes port 31 and port 32 to be mirror images of each other. Therefore, the phase balance and signal size balance of the balanced-to-unbalanced converter 30 of the present invention appear to be quite good under such a mapping relationship. The balanced-to-unbalanced conversion of the present invention can be applied to output inputs with different characteristic impedances, that is, the characteristic impedances of the unbalanced port and the balanced port can be different, and such impedance matching can be performed by the steps in FIG. 3 (A). The order of the impedance transmission is achieved by coupling the transmission lines. The principle will be detailed below. First, we approximately assume that an electrical wall is placed at the center of Figure 3 (A) and (g) as shown by the dotted line. Such an approximation is appropriate under the aforementioned symmetrical arrangement. Moreover, the principle of impedance matching of the present invention can be described more clearly. Under the assumption that the electric wall is symmetrical, the principle of impedance matching can be inferred from the circuit analysis on the left half of the electric wall. Before discussing impedance matching, first explain the transition from Figure 3. (A) Equivalent Circuit to Figure 3 (B The equivalent circuit of) is only shown in Figure 3 (A).
第16頁Page 16
介於03至01間傳輸線與接地金屬面之效應可以忽略時方 正確，但這樣的分解對於說明具有強烈耦合效應之情形， 在原理上也是適當的。在上述情形，介於〇4及〇2間之傳輪 線可以當成介於0 3及0 1間傳輸線之接地線。因此，在圖三 (B )中無矩形條之長直線即代表上述之接地線，此接地線將 搞合線之耦合效應納入考慮。而在圖三（A)中介於〇4及〇2 間傳輸線與接地金屬面之效應則以圖三（B)中介於 0 4，0 5 (及G 2 ’ 0 6 )之間之接地傳輸線來表示這接地傳輸線 55貢獻了一些感抗（reactance)在平衡埠而很清楚可以看 出’平衡淳與非平衡蟑之阻抗匹配主要由圖三（B)中串接之 傳輪線節44來主控。以下將以一個^。〗及阻抗轉換比 〇3/31>1之例子來說明。這個平衡至非平衡轉換器實體如 圖五（A)所示’下面說明中在圖三（B)中右半部之電路將予 以省略，而剩餘左半部電路則如圖三（c)所示。圖三（〇中 較寬之線相對應於圖五較寬之線，接著為了清楚解釋，在此 引進了集總式元件之等效模型。因此，較寬之線可代表接 地電容，而較細之線代表串接電感，而埠則等效於電阻。這 個轉換之圖示則顯示於圖三（c)之等二個步驟，而最後轉換 成之集總式等效模型則顯示於圖三（ς )之第三個步驟。從 ，個模型’元件5 5只是一個接地電感。而元件44之功能則 疋將R2及j wL 2與R1作阻抗匹配。這個阻抗匹配可以下式表 示： 從式子（1 )，M(w)總是小於丨，這意味阻抗轉換 〇3/31 = Rl/R2>l可以達成另外在適當選取C&L1下，j(w)之The effect between the transmission line and the ground metal plane between 03 and 01 is correct when neglectable, but such a decomposition is also appropriate in principle to explain situations with strong coupling effects. In the above case, the transmission line between 〇4 and 〇2 can be regarded as the ground line between the transmission lines between 0 3 and 01. Therefore, the long straight line without a rectangular bar in Figure 3 (B) represents the above-mentioned ground line. This ground line takes into account the coupling effect of the joining lines. The effect of the transmission line between 〇4 and 〇2 and the ground metal surface in Fig. 3 (A) is the ground transmission line between 0 4, 0 5 (and G 2 '0 6) in Fig. 3 (B). It indicates that this grounded transmission line 55 contributed some reactance to the balanced port and it is clear that the impedance matching between balanced and unbalanced cocks is mainly dominated by the transmission wheel link 44 connected in series in Figure 3 (B). control. The following will start with a ^. And the impedance conversion ratio 〇3 / 31 > 1 will be described as an example. This balanced-to-unbalanced converter entity is shown in Figure 5 (A). 'The circuit in the right half of Figure 3 (B) in the description below will be omitted, while the remaining left half of the circuit is shown in Figure 3 (c). Show. The wider line in Figure 3 (0 corresponds to the wider line in Figure 5, and then for clarity of explanation, the equivalent model of lumped components is introduced here. Therefore, the wider line can represent the ground capacitance, and The thin line represents the series inductance, and the port is equivalent to the resistance. The diagram of this conversion is shown in the two steps of Figure 3 (c), and the lumped equivalent model finally converted is shown in the figure. The third step of three (ς). From this model, the element 5 5 is just a ground inductor. The function of element 44 is to perform impedance matching between R2 and j wL 2 and R1. This impedance matching can be expressed by the following formula: From the formula (1), M (w) is always smaller than 丨, which means that the impedance conversion is 〇3 / 31 = Rl / R2 > l can also achieve that under the appropriate choice of C & L1, j (w)
第17頁Page 17
五、發明說明（14) 值可以趨於〇,這意味著元件55所 站田丰咖4 t 卞33所貝獻之感抗可以被消除。 使用步階式阻抗匹配如傳輪绫44舻 号饰跟44心，整個平衡至非平衡轉 換器之長度可以被大量縮小，而缩小tϋ_ 名—,.^ ^ ’叩拖J之里，則視步階阻抗比 而疋。這可以很清楚從式（1}看屮 ’有出，在固疋電容C及電感L1 之下，使用較寬之線，則只須要較短县庳也 只受权组長度來達到要求電容 :雖Λ/之線’則只須要較短長度來達到要求之電感 :二雖然在應用上有些不同，這個現象相當類似步階阻抗 ，、振 ^(stepped impedance res〇nat〇r)之操作。所以在 步階阻抗比大時，電路長度會較小，也因此在這樣安排下本 發明平衡至非平衡轉換器之尺寸可以遠小於傳統馬氏平 衡至非平衡轉換器。所以當阻轉換比（〇3/31)>1時，圖三 (A)中耦合線具要較大編號者，其寬度必須大於具有較小編 號者，而當（03/31 )<1時，則相反，亦即具有較大編號者其 寬度必須小於具有較小編號者。在一些應用中因為電路 中心並非如前述有一個理想電牆，所以在平衡埠之作號大 小平衡度往往會有變差之現象，這現象可以利用在圖°三\八） 中加入一截傳輸線33如圖四所示來加以改善，這一戴傳輸 線即位於圖（四）中介於〇 7及〇8中間。 以下圖五〜圖十四為本發明之各式實施例（k=j = 2)。 本發明之平衡至非平衡轉換器可以被應用於多層微帶 線架構，如圖五~•圖八之實施例所示，也可以被應用於多層 帶狀線如圖九〜圖十二所示，另外也可被應用於單層 sV. Description of the invention The value of (14) can approach 0, which means that the inductive reactance of the element 55 at the station Tianfengca 4 t 卞 33 can be eliminated. Using step-wise impedance matching, such as pass wheel 绫 44 舻 and 跟 44 心, the length of the entire balanced-to-unbalanced converter can be greatly reduced, and tϋ_ 名 — ,. ^ ^ '叩 was dragged inside J, then The step impedance ratio is 疋. This can be seen very clearly from the formula (1): 屮 'has the following. Under the fixed capacitor C and inductor L1, using a wider wire, only a shorter county is required, and only the length of the authorized group is required to achieve the required capacitance: Although Λ / 之 线 'needs only a short length to achieve the required inductance: Although it is slightly different in application, this phenomenon is quite similar to the operation of stepped impedance, stepped impedance res〇nat〇r. So in When the step impedance ratio is large, the circuit length will be smaller, so the size of the balanced-to-unbalanced converter of the present invention can be much smaller than the traditional Markov balanced-to-unbalanced converter under this arrangement. Therefore, when the resistance conversion ratio (〇3 / 31) > 1, if the coupling line in Figure 3 (A) requires a larger number, its width must be greater than those with a smaller number, and when (03/31) < 1, the opposite is true, that is, Those with a larger number must have a smaller width than those with a smaller number. In some applications, because the circuit center does not have an ideal electrical wall as described above, the balance of the number in the port is often worse. Phenomenon can be used in Figure ° 3 \ 8) Canada The transmission line 33 is improved as shown in Fig. 4. This transmission line is located in the middle of Fig. 4 between 07 and 08. Figures 5 to 14 below are various embodiments of the present invention (k = j = 2). The balanced-to-unbalanced converter of the present invention can be applied to a multi-layered microstrip line architecture, as shown in the embodiments of FIG. 5 to FIG. 8, and can also be applied to a multi-layered strip line as shown in FIGS. 9 to 12. , Can also be applied to single layer s
4 3¾¾ Q 4 五、發明說明（15) I多條耦合線以增加耦合量，當 條之耦合線去實孭圄L里个列寺，了使用更多 加麵人结夕&現圖—（A)中之上傳輸線和下傳輸線，而增 式乃i由如Ϊ目端視須求而定。另外前述輪合線接地之方 ί明所示之穿孔之方式連接至接地金屬面，而本 ΐ = i衡轉換器更可利用曲折及螺旋之方式加以 細小斤佔電路面積（類似於如文獻[8 ]之作法）。 > 五（A卜圖（C)所示之平衡至非平衡轉換器應用於阻 抗轉換比（非平衡埠/平衡埠>1)，在圖五（A)中，平衡至非平 衡轉換器50十包含一個介質層52有上下兩面，下面為金屬 接地面58,而上面為一個内金屬層51，這個金屬層51包含第 一條金屬線54，此一金屬線由11 1，〗丨〇及〗所構成，另外 金屬層51亦包含了一個第二條金屬線56，此一金屬線由 120’ 121’及I 2-1所構成《上述之兩條金屬線54, 56彼此絕 緣且由一個平衡間隙點隔開，一般而言，負載可直接接於 此平衡間隙點上，或可藉由兩條傳輪線自丨丨—丨及丨2 —丨拉 出。實際上此平衡間隙點，即為平衡埠，接著在介質層52上 有第二個介質層5 了安置於上，下面為内金屬層51，而上面為 上金屬層53，一個第三條金屬線59位於此一金屬層上，且正 好重疊於金屬線54，及56之上，而此一金屬線59之任一端可 定為非平衡埠。這條金屬線59包含了第一組串接之金屬線 T11，T10，這兩節金屬線Τ11，Τ10具有不同阻抗值，另外金屬 線5 9亦包含了第二組具有不同阻抗之串接金屬線Τ20，Τ21， 上述4條金屬線對電路中心而言，互為對稱.而且上述金屬-線54及56亦具有同樣對稱性質。本發明即是利用Τ1 0, ΤΙ 1,4 3¾¾ Q 4 V. Description of the invention (15) I multiple coupling lines to increase the amount of coupling. When each of the coupling lines goes to a temple in L, more people add face to face & The upper transmission line and the lower transmission line in (A), and the augmentation type is determined by Rugao end as required. In addition, the perforated way shown in the ground wire of the aforementioned round wire is connected to the ground metal surface, and this 衡 = i-balance converter can also use a zigzag and spiral way to occupy a small area of the circuit (similar to the document [ 8]. > Five (The balanced-to-unbalanced converter shown in Figure A (C) is applied to the impedance conversion ratio (unbalanced port / balanced port > 1). In Figure 5 (A), the balanced-to-unbalanced converter 50x includes a dielectric layer 52 with upper and lower sides, a metal ground plane 58 on the lower side, and an inner metal layer 51 on the upper side. This metal layer 51 includes a first metal line 54. This metal line consists of 11 1, 〖丨 〇 And〗, and the metal layer 51 also includes a second metal wire 56. This metal wire is composed of 120 ′ 121 ′ and I 2-1. The two metal wires 54 and 56 are insulated from each other and A balance gap point is separated. Generally speaking, the load can be directly connected to this balance gap point, or it can be pulled out from the two transfer lines from 丨 丨 — 丨 and 丨 2 — 丨. In fact, this balance gap point Is a balanced port, and then a second dielectric layer 5 is placed on the dielectric layer 52, the inner metal layer 51 is below, the upper metal layer 53 is above, and a third metal line 59 is located on this metal. Layer, and just overlap metal wires 54, and 56, and either end of this metal wire 59 can be fixed Unbalanced port. This metal wire 59 includes the first group of metal wires T11 and T10 connected in series. The two metal wires T11 and T10 have different impedance values, and the metal wire 5 9 also includes the second group with different impedances. The metal wires T20, T21 are connected in series, and the above four metal wires are symmetrical to each other at the center of the circuit. Moreover, the above metal-wires 54 and 56 also have the same symmetrical properties. The present invention utilizes T1 0, ΤΙ 1,
第19頁 五、發明說明（16) T2 0, T2 1及金屬線5 4之56之對稱性達成了相位及信號大小 之平衡。 在圖五（A)中第一組線T 10及T11具有不同寬度且連接 在一起，產生了一個步階阻抗之分佈，靠近電路令心之線節 T10比線節ΤΙ I窄，而第二組線T20, T21亦同樣具有不同寬度 且連接在一起，產生了一個步階阻抗之分佈，同時靠近電路 中心之線節T20亦比線節T21為窄。 另外圖五（A)中之金屬線54，及56亦可分別由兩組由不 同寬度串連而成之金屬線構成，並且這些線寬之變化亦對 稱於電路中心，第三組線由I 1 〇及111所組成，且I 1 〇比Π 1為 窄，'另外第四組線由I 2 0及I 2 1所組成，同時I 2 0比I 2 1為窄， 上述所有步階式阻抗分佈之作用即為了達到平衡埠至非平 衡埠之阻抗匹配。 圖十五，為圖五（A)中之金屬層53，經曲折之方式重新 安排。而圖十六則為圖五（A)中之金屬層53，經螺旋式安 排。在圖十六中，金屬線501，位於另一個安置於介質層57 上之介質層，而線節T11則藉由穿孔502與501相連接。金屬 線5 0 1之另一個端點則為非平衡蟑β本發明之所有可能實 施例皆可以如圖十五及圖十六之方式縮小所佔面積。 圖五（Β)為圖五（Α)之變形，圖五（Β)在結構上與圖五 (A)類似’除了一節傳輸線几被連接於Τ1 〇與Τ2 0之間，這一 節傳輸線是用以避免平衡埠信號平衡度變差。 圖五（C)為圖五（A)之另一變形，其架構亦與圓五（a)相 類似，圖五（C)在T10，T20之間接上一個晶片式電容之一Page 19 5. Description of the invention (16) The symmetry of T2 0, T2 1 and metal wire 5 4 to 56 has reached a balance between phase and signal size. In FIG. 5 (A), the first group of lines T 10 and T 11 have different widths and are connected together, which results in a step impedance distribution. The proximity of the circuit makes the core section T 10 narrower than the section TI I, and the second The group lines T20 and T21 also have different widths and are connected together, which results in a step impedance distribution. At the same time, the line section T20 near the center of the circuit is narrower than the line section T21. In addition, the metal wires 54 and 56 in Figure 5 (A) can also be composed of two sets of metal wires connected in series with different widths, and these line width changes are also symmetrical to the center of the circuit. 1 〇 and 111, and I 1 〇 is narrower than Π 1, 'In addition, the fourth group of lines is composed of I 2 0 and I 2 1, while I 2 0 is narrower than I 2 1, all the above steps The role of impedance distribution is to achieve impedance matching from balanced port to unbalanced port. Fig. 15 is the metal layer 53 in Fig. 5 (A), which is rearranged in a zigzag manner. Fig. 16 shows the metal layer 53 in Fig. 5 (A), which is arranged spirally. In FIG. 16, the metal wire 501 is located on another dielectric layer disposed on the dielectric layer 57, and the wire segment T11 is connected to the 501 through the through hole 502. The other end point of the metal wire 51 is an unbalanced cock β. All possible embodiments of the present invention can reduce the occupied area in the manner shown in Figs. 15 and 16. Figure 5 (B) is a modification of Figure 5 (A). Figure 5 (B) is similar in structure to Figure 5 (A) 'except that a transmission line is connected between T1 0 and T2 0, this section of the transmission line is used To avoid deterioration of the balance port signal balance. Figure 5 (C) is another variation of Figure 5 (A), and its structure is similar to that of circle 5 (a). Figure 5 (C) connects one of the chip capacitors between T10 and T20.
第20頁 五、發明說明（17) 端’而另一端接地’這個晶片式電容也可用以避免平衡槔 之信號大小平衡度變差。 圖六也類似於圖五（Α)，但圖六將原本較寬之線變較窄 之線，而較窄之線變較寬之線，即Tl〇，T20比Τ11，Τ21來得 寬’而110, Τ20亦比111，121來得寬，上述之安排應用於阻抗 轉換比（非平衡埠/平衡埠< 1 )之情形。 圖七及圖八亦類似於圖五（Α)及圖六（但金屬線54，及 56為同寬度）^圖九〜圖十二分別相似於圖五（Α)〜八，除了 在圖九〜十二中，有另一個介質層91堆疊在金屬層53之上， 並且在介質層91上，覆有另一金屬接地面93。 圖十三為平衡至非平衡轉換器13〇〇包含了一個介質層 132，下面為金屬接地面138，上面則為第一個金屬層1330， 在此一金屬層上有第一及第二條金屬線1331及13 32,彼此 互相絕緣且由平衡間隙點分開，負載可直接接於其上，或藉 由兩條傳輸線由1333, 1334拉出再接上，實際上平衡埠即位 於1333與1334之間，另外有第二個金屬層134〇亦位於介質 層1 32之上，在此一金屬層上有第三條金屬線，而此金屬線 與上述第一及第二條金屬線平行且分開一段距離，此第三 條金屬線之擇一端為非平衡埠，另一端為開路。接著有第 三個金屬層1 350亦有第四及第五條金屬線位於其上，其完 全與1331及丨332相同並以第三條金屬線為中心而言，互為 對稱。上述第一，二，四，五條金屬線由數條連接線丨3〇1相 接’用以等電位，而第三條金屬線包含了第一組串接之金屬. 線T11，T10，這兩節金屬線T11T10具有不同阻抗值另外第Page 20 V. Description of the invention (17) The chip capacitor of the terminal “17 and the other terminal is grounded” can also be used to avoid the deterioration of the signal balance of the balance signal. Figure 6 is also similar to Figure 5 (A), but Figure 6 changes the originally wider line to a narrower line, while the narrower line becomes a wider line, that is, T10, T20 are wider than T11, T21 'and 110 and Τ20 are also wider than 111 and 121. The above arrangement is applied to the impedance conversion ratio (unbalanced port / balanced port < 1). Figures 7 and 8 are also similar to Figures 5 (A) and 6 (but the metal wires 54 and 56 are the same width) ^ Figures 9 ~ 12 are similar to Figures 5 (A) ~ 8, except in Figure 9 Among the twelve, another dielectric layer 91 is stacked on the metal layer 53, and another dielectric ground plane 93 is covered on the dielectric layer 91. Figure 13 shows a balanced-to-unbalanced converter 1300 including a dielectric layer 132, a metal ground plane 138 below, and a first metal layer 1330 on the top. There are first and second strips on this metal layer. The metal wires 1331 and 13 32 are insulated from each other and separated by the balance gap point. The load can be directly connected to it, or pulled out by 1333, 1334 and then connected through two transmission lines. In fact, the balanced ports are located at 1333 and 1334. In between, a second metal layer 134 is also located on the dielectric layer 1 32. There is a third metal line on this metal layer, and this metal line is parallel to the above first and second metal lines and Separating a distance, the third metal wire has an unbalanced port at one end and an open circuit at the other end. Then there is a third metal layer 1 350 and there are fourth and fifth metal wires on it, which are completely the same as 1331 and 332 and centered on the third metal wire, which are symmetrical to each other. The above-mentioned first, second, fourth and fifth metal wires are connected by a plurality of connecting wires 丨 3001 to be equipotential, and the third metal wire contains the first group of metals connected in series. Lines T11, T10, this Two sections of metal wires T11T10 have different impedance values.
第21頁 五、發明說明（18) τΐ η 條τΐ 1屬線亦.包含了第二組具有不同阻抗之串接金屬線 μ二贫，上述4條金屬線對電路中心而言，互為對稱。而且 一條與第二條金屬線及第四條與第五條金屬線亦具 同樣對稱性質。本發明即是利用T1〇, τπ，T2〇, T21及第 一條與第二條金屬線及第四條與第五條金屬線之對稱性達 成了相位及信號大小之平衡β在圖十三中第一組線T丨〇及 Τ11 士有不同寬度且連接在一起，產生了一個步階阻抗之分 佈，Λ近電路中心之線節τ丨〇比線節τ丨1窄而第二組線τ 2 〇， Τ21亦同樣具有不同寬度且連接在一起，產生了一個步階阻 抗之分佈，同時靠近電路中心之線節Τ20亦比線節Τ2 1為 窄。. 另外圖十三中之第一條與第二條金屬線及第四條與第 五條金屬線亦可分別由四組不同寬度串連而成之金屬線構 成，並且這些線寬之變化亦對稱於電路中心，前述串接金屬 線在靠近電路中心部分比遠離電路中心部分為窄，上述所 有步階式阻抗分佈之作用即為了達到平衡埠至非平衡埠之 阻抗匹配。 圖十四與圖十三類似，但在圖十四中第一組線Τ10及 Τ11具有不同寬度且連接在一起，產生了一個步階阻抗之分 佈，靠近電路中心之線節Τ10比線節Τ 11寬，而第二組線Τ20, Τ21亦同樣具有不同寬度且連接在一起，產生了一個步階阻 抗之分佈，同時靠近電路中心之線節Τ20亦比線節Τ2 1為 寬。 另外圖十四中之第一條與第二條金屬線及第四條與第Page 21 V. Description of the invention (18) τΐ η τΐ 1 is also a line. It includes a second group of two serially connected metal wires with different impedances μ. The above 4 metal lines are symmetrical to the center of the circuit. . And one and the second metal line and the fourth and the fifth metal line have the same symmetrical properties. In the present invention, the balance between phase and signal magnitude is achieved by using the symmetry of T1〇, τπ, T2〇, T21 and the first and second metal lines and the fourth and fifth metal lines. The first group of wires T 丨 〇 and T11 are connected with different widths, which results in a step impedance distribution. The line section τ 丨 〇 near the center of the circuit is narrower than the line section τ 丨 1 and the second group of lines τ 2 〇, T21 also has different widths and is connected together, which results in a step impedance distribution, and at the same time, the line section T20 near the center of the circuit is narrower than the line section T2 1. In addition, the first and second metal wires and the fourth and fifth metal wires in Figure 13 can also be composed of four groups of metal wires connected in series with different widths, and the changes in these line widths are also Symmetrical to the center of the circuit, the aforementioned series of metal wires are narrower near the center of the circuit than away from the center of the circuit. The effect of all the above-mentioned stepped impedance distributions is to achieve impedance matching from the balanced port to the unbalanced port. Figure 14 is similar to Figure 13, but in Figure 14, the first group of lines T10 and T11 have different widths and are connected together, resulting in a step impedance distribution. The line section T10 near the center of the circuit is more than the line section T 11 width, and the second group of lines T20, T21 also have different widths and are connected together, resulting in a step impedance distribution, while the line section T20 near the center of the circuit is also wider than the line section T2 1. In addition, the first and second metal wires and the fourth and
第22頁 五、發明說明（19) 五條金屬線亦可分別由四組不同寬度串連而成之金屬線構 成，並且這些線寬之變化亦對稱於電路令心，前述串接金屬 線在靠近電路中心部分比遠離電路中心部分為寬，上述所 有步階式阻抗分佈之作用即為了達到平衡埠至非平衡埠之 阻抗匹配。 在圖五，圖七，圖九，圖Ί--及圖十三中，阻抗轉換比>1， 而在圖六，圊八，圖十，圖十二及圖十四中阻抗轉換比 <1 ° 本發明參照特定實施例來說明及圖示但並非以此限制本發 明，熟習此項技藝者可以實施若干修改及變動而沒有脫離 上遂實施例及下文之申請專利範圍所述的發明原理。Page 22 V. Description of the invention (19) The five metal wires can also be composed of four groups of metal wires connected in series with different widths, and the changes in these line widths are also symmetrical to the center of the circuit. The center part of the circuit is wider than the part farther away from the center of the circuit. The effect of all the above stepped impedance distributions is to achieve impedance matching from balanced port to unbalanced port. In Figure 5, Figure 7, Figure 9, Figure 九-and Figure 13, the impedance conversion ratio > 1, and in Figure 6, 28, Figure 10, Figure 12 and Figure 14, the impedance conversion ratio <; 1 ° The invention is illustrated and illustrated with reference to specific embodiments but is not intended to limit the invention. Those skilled in the art can implement several modifications and changes without departing from the inventions described in the previous embodiments and the scope of patent applications below. principle.
第23頁Page 23
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| TW88108248A TW435004B (en) | 1999-05-20 | 1999-05-20 | Miniaturization for impedance balun |
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| TW88108248A TW435004B (en) | 1999-05-20 | 1999-05-20 | Miniaturization for impedance balun |
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| CN102197533A (en) * | 2008-11-14 | 2011-09-21 | 株式会社藤仓 | Resin multilayer device and method for manufacturing same |
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