4 3 4 5 3664twf.doc/006 A7 B7 五、發明説明（ί ) 本發明是有關於一種開口（opening)之製造方法，且特 別是有關於一種進行蝕刻製程以形成開口時，可同時（in-situ)去除光阻和將開口角落(corner)圓弧化(rounding)之製造 方法。 在現今半導體製程中，爲提高元件的積集度，冗件尺 寸邁入線寬爲〇.25μιη，甚至〇.18μιη的製程，而高積極度 元件其間距尺寸(pitch size)也逐漸縮小至0.6μιη。爲了因應 現今半導體積集度之需要，業者逐漸致力於形成垂直輪廓 (verticle profile)的接觸窗(contact window)開口或介層窗(via) 開口以符合此設計規則(design rule)的要求。 然而\垂直輪廓的接觸窗開口或介層窗開口在後續進 行導電層的沈積時，會因其階梯覆蓋能力不佳而產生空隙 (void)，造成元件接觸不良的情形。因此爲了克服垂直輪 廓開α於塡充金屬材料上的限制，於是在蝕刻完開口後， 採用額外的製程以圓弧化開口，解決沈積金屬材料的困 擾。 第1Α圖至第1D圖繪示習知一種開口的製造流程剖面 圖。在此以介層窗開口爲例說明習知一種開口的製造方 法。 請參照第1Α圖，提供基底1〇〇 ’此基底上具有一 元件結構(未繪示)與導電層102 ’之後’在基底100上形成 介電層104。接著在介電層104上形成光阻層106 ’用以定 義介電層104。 請參照第1Β圖，接著’以光阻層1〇6爲罩幕’利用 3 本紙張尺度適用中國國家標準（CNS ) Μ规格·（ 210X297公瘦） ----------^Q-装------訂------線 -- (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印掣 4348Ε5 3664twf.doc/006 A 7 B7 五、發明説明（2) C4F8/Ar氣體作爲乾式蝕刻之氣體源，對介電層104進行蝕 刻步驟，形成一頂端角落(corner) 108爲垂直之介層窗開口 110。 請參照第1C圖，接著於電漿反應室中’使用氧電漿 進行灰化(ashing)反應以移除光阻層106。 ~ 請參照第1D圖，之後，在另一個反應室中進行開口 110其頂端角落108的圓弧化步驟。首先，使用氬氣(Ar)作 爲電漿之氣體源，於電漿反應室牛施加一可產生射頻(RF) 的電壓，使電漿所產生之Ar粒子’利用物理氣相沈積之 濺鍍方式，針對介層窗開口 110垂直輪廓之頂端角落 進行離子轟擊(ion bombardment)的步驟。藉由此離子轟擊 的過程，開口 110之頂端角落108逐漸被圓弧化，形成一 圓弧化角落108a之開口 112。 經濟部中央榇準局貝工消贤合作社印製 (請先閱讀背面之注意事項再填寫本頁) 然而，爲了改善垂直輪廓的介層窗或接觸窗開口在塡 入導電層等材料時容易産生空隙的缺點，習知技藝先將光 阻層移除後，再進行物理方式之離子轟擊步驟以圓弧化開 口之頂端角落。在上述方法中，去除光阻與開口之圓弧化 需在不同反應室，且分兩個步驟進行方能完成。藉此額外 的步驟不但使製程更複雜化，而且以物理性的離子轟擊方 式將開口圓弧化，其選擇性較差且不易控制，造成圓弧化 開口製程上的困擾。 此外，習知技藝係利用Ar氣體進行物理方式的離子 轟擊步驟，由於Ar氣體的原子大，針對垂直的頂端角落 進行45度削角的功效佳。然而採用習知方法，容易形成 4 本紙張尺度適用17國國家標準（CNS ) Μ規格（210父2打公釐） 經濟部中央標準局肩工消費合作社印製 4821 3 664twf.doc/〇〇6 ρ^η _B7__ 五、發明説明（彡） 其輪廓不直，而有圓胖曲折(bowing)的開口 114產生，如 第2圖所示。如此也容易造成後續塡充導電層時，其階梯 覆蓋能力不佳而導致元件接觸不良的情形。 因此本發明的目的之一就是在提供一種開口的製造方 法，可在去除光阻的同時，也將開口之頂端角落圓弧化。 如此不僅於同一反應室中達到了開口圓弧化的目的，而且 簡化了整個製程的步驟。 本發明的另一目的是在提供一種開口的製造方法，改 善習知圓弧化步驟中，因選擇性不佳而導致不易控制開口 形成的輪廓。 爲達上述及其他目的，本發明提供一種開口的製造方 法，在微影鈾刻以形成垂直輪廓的開.口後，選擇氬氣與氧 氣的混合氣體(Ar/02)作爲電漿源，利用Ar和02氣體產生 的電漿，在移除光阻的同時，針對開口的頂端垂直角落 (comer)以化學反應的方式進行圓弧化步驟，而完成了所需 的開口輪廓。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下： 圖式之簡單說明： 第1A圖至1D繪示習知一種開口之製造流程剖面圖。 第2圖繪示一種開口之剖面圖。 第3A圖至第3C圖繪示根據本發明較佳實施例一種開 口之製造流程剖面圖。 5 本紙張—中酬家樣準（CNS) A4:^ (21GX297公龙) - -- tn i ^ i . t (請先聞讀背面之注意事項再填寫本頁) 、ΤΓ· 線 3664twf.doc/006 A7 B7 五、發明説明（y) 圖式之標記說明： 100、300 :基底 102、302 :導電區 104、304 :介電層 106、306 :光阻層 - 108、308 :頂端角落 108a、308a:圓弧化之頂端角落 110、112、114、310、312 :開口 實施例 第3A圖至第3C圖繪示根據本發明較佳實施例一種開 口之製造流程剖面圖。 本發明爲一種在絕緣層形成開口的製造方法，因此在 '半導體製程中，例如可利用來形成接觸窗開口，介層窗開 口或在金屬鑲嵌製程中形成的開口，而在此以介層窗開口 爲例，說明本發明較佳實施例一種開口之製造方法。 請參照第3Α圖，提供基底300，於基底300上具有一 電晶體結構(未繪示)與導電區302，導電區302例如爲金屬 層，摻雜有雜質的多晶矽導電層或摻雜有雜質之區域。之 後，在基底300上形成介電層304(或稱絕綠層），介電層之 材質例如爲二氧化矽。接著在介電層304上形成光阻層306 以定義絕緣層304。 請參照第3Β圖，接著，以光阻層306爲罩幕，對介 電層304進行蝕刻步驟，以形成一頂端角落308爲垂直之 介層窗開口 310。其典型的方法包括以非等向性蝕刻方法， 6 本紙張尺度適用中國國家標準（CNS > A4规格（2丨〇><297公董） (请先閲讀背面之注意Ϋ項再填寫本頁) -裝· 經濟部中央標準局負工消費合作社印聚 經濟部中央標準局貝工消費合作社印製 434125 3664twf.doc/006 A 7 B7 五、發明説明（_T ) 利用C4F8/Ar混合氣體作爲乾式蝕刻氣體源，進行形成開 口 310之步驟。 請參照第3C圖，之後，有別於習知作法，本發明係 利用氬氣與氧氣之混合氣體(Αι702)作爲電漿的氣體源，於 同一反應室中同時進行去除光阻層306和將開口 310之頂 端角落308圓弧化的步驟。使用氧電漿係進行灰化反應以 去除光阻層306，氬氣電漿係利用來轟擊頂端角落以圓弧 化開口。此時去除光阻層306的同時，於電漿反應室中施 加一可產生射頻的電壓，可使電漿所產生的Ar粒子，針 對介層窗開口 310之垂直頂端角落308進行加速離子轟擊 步驟。於反應過程中，輸入產生射頻偏壓(bias power)的功 率約爲0.00卜300瓦特左右，而維持電漿運作所需的功率 (source power)約爲1500〜4500瓦特左右，Ar氣體流量控制 在約 0.001 〜400 sccm(standard cubic centimeter per minute, i.e. cm/min or ml/min)左右，氧氣氣體流量則控制在約100〜500 seem左右。藉由調整不同的反應室壓力（chamber pressure)、 氬氣和氧氣之氣體流量，氧電漿會分解在蝕刻氧化物材質 之介電層304其過程中所產生的CxHyFz化合物，而產生氟 粒子。此氟粒子將伴隨氬粒子撞擊介層窗開口 310之垂直 頂端角落308，而與介電層304發生化學反應，形成一經 圓弧化步驟後的頂端角落308a之開口 312，如第3C圖所 示°接著，可在這圓弧化角落之開口 312中塡入導電層等 材料以進行後續的製程《 在本發明的較佳實施例中，利用Ar/02氣體作爲電漿 7 本紙張適用中國國家楹準（CNS )八4聽^ ( 2Iclx297公董） I^----裝-----—訂 ——}線 .* (請先閲讀背面之注意事項再填寫本頁) -¾ .. $2j4twf.d0_ A7 .- ______B7_ 五、發明説明（6 ) 源，可在去除光阻的同時，也進行開口之頂端角落圓弧化 的步驟。如此不僅於同一反應室中達到了開口圓弧化的目 的，而且簡化了整個製程的步驟。此外，本發明採用的氧 電漿會分解蝕刻氧化物時所產生的CxHyFz化合物而產生氟 粒子，且藉由此生成的氟離子和Ar電漿撞擊開口之垂直 角落，並與氧化物發生化學反應而使有垂直角落之開口圓 弧化，如此以化學反應的方式以圓弧化開口角落，其選擇 性較佳而且也易於控制開口的形成輪廓。 本實施例中之開口 312係以介層窗開口爲例，因此在 開口 312形成後，所暴露出的導電區1〇2爲導電層。若開 口 312以接觸窗開口爲例，則開口 312形成後，所暴露出 者爲摻雜區。再者，以金屬鑲嵌製程爲例，則是暴露出導 電層。而本發明均可應用於介層窗開口、接觸窗開口或是 金屬鑲嵌形成的開口等製程當中。 綜上所述，本發明的特徵在於： 1. 本發明係利用八1702氣體作爲電漿源，在去除光阻 的同時，也圓弧化開口的角落。 2. 本發明去除光阻和進行圓弧化開口之步驟皆在同 一反應室中進行，簡化了製程的步驟。 3. 本發明係利用化學反應加上物理方式以圓弧化開 口，其選擇性較佳且可易於控制開口的形成輪廓。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圔內，當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 8 本紙張尺度適用中國國家樣) A4規格（210X297公釐）— J-------'-^—^------ITI-^——.--}線 _* (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局貞工消費合作社印製4 3 4 5 3664twf.doc / 006 A7 B7 V. INTRODUCTION TO THE INVENTION The invention relates to a method for manufacturing an opening, and in particular to a method for performing an etching process to form an opening. -situ) a manufacturing method for removing photoresist and rounding corners of openings. In today's semiconductor processes, in order to improve the accumulation of components, the size of redundant parts has been moved into a process with a line width of 0.25 μm, or even 0.018 μm, and the pitch size of highly active components has gradually been reduced to 0.6 μιη. In order to meet the needs of today's semiconductor accumulation, industry has gradually worked to form contact window openings or via openings of vertical profile to meet the requirements of this design rule. However, when the vertical contour of the contact window opening or the interlayer window opening is used for subsequent deposition of the conductive layer, voids may occur due to its poor step coverage ability, which may lead to poor component contact. Therefore, in order to overcome the limitation of vertical profile α on the metal-filled metal material, an additional process is adopted to etch the opening after the opening is etched to solve the problem of depositing metal materials. 1A to 1D are cross-sectional views showing a conventional manufacturing process of an opening. Here, a manufacturing method of a known opening is described using an example of an opening of a via window. Referring to FIG. 1A, a substrate 100 ′ is provided. The substrate has a device structure (not shown) and a conductive layer 102 ′ and a dielectric layer 104 is formed on the substrate 100. A photoresist layer 106 'is then formed on the dielectric layer 104 to define the dielectric layer 104. Please refer to Figure 1B, and then use the photoresist layer 106 as a cover. Use 3 paper sizes to apply Chinese National Standard (CNS) M specifications (210X297 male thin) ---------- ^ Q-pack ------ order ------ line-(Please read the precautions on the back before filling out this page) Printed by the Consumers' Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 4348Ε5 3664twf.doc / 006 A 7 B7 V. Description of the Invention (2) C4F8 / Ar gas is used as a dry etching gas source. The dielectric layer 104 is etched to form a corner corner 108 as a vertical dielectric window opening 110. Referring to FIG. 1C, an oxygen plasma is used in the plasma reaction chamber to perform an ashing reaction to remove the photoresist layer 106. ~ Please refer to FIG. 1D, and then perform the arcing step of the opening 110 and the top corner 108 in another reaction chamber. First, argon (Ar) is used as the gas source of the plasma, and a voltage that can generate radio frequency (RF) is applied to the plasma reaction chamber, so that the Ar particles generated by the plasma are sputtered by physical vapor deposition. Performing ion bombardment on the top corners of the vertical contour of the via window opening 110. Through the process of ion bombardment, the top corner 108 of the opening 110 is gradually arc-shaped to form an opening 112 of the arc-shaped corner 108a. Printed by Bei Gong Xiaoxian Cooperative of the Central Bureau of Standards, Ministry of Economic Affairs (please read the precautions on the back before filling this page). However, in order to improve the vertical contour of the interlayer window or contact window opening, it is easy to produce when the conductive layer is inserted into the material. Disadvantages of the gap, the conventional art first removes the photoresist layer, and then performs a physical ion bombardment step to round the top corners of the opening. In the above method, the removal of the photoresist and the arc of the opening needs to be in different reaction chambers, and can be completed in two steps. This extra step not only complicates the manufacturing process, but also arc-opens the opening by physical ion bombardment, which has poor selectivity and is not easy to control, causing confusion in the process of arc-shaped opening. In addition, the conventional technique uses Ar gas to perform the physical ion bombardment step. Since the Ar gas has large atoms, it is effective to perform a 45-degree chamfering on the vertical top corner. However, using conventional methods, it is easy to form 4 paper standards that are applicable to 17 national standards (CNS) M specifications (210 father 2 dozen mm). Printed by the shoulder labor consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 4821 3 664twf.doc / 〇〇6 ρ ^ η _B7__ 5. Description of the invention (彡) The outline 114 is not straight, but the opening 114 with rounded and zigzag (bowing) is generated, as shown in FIG. 2. In this way, it is easy to cause the poor coverage of the step during the subsequent filling and filling of the conductive layer, resulting in poor contact of the components. Therefore, one of the objectives of the present invention is to provide a method for manufacturing an opening, which can remove the photoresist and also round the top corners of the opening. This not only achieves the purpose of circular opening in the same reaction chamber, but also simplifies the steps of the entire process. Another object of the present invention is to provide a method for manufacturing an opening, which can improve the conventional contouring step, and it is difficult to control the contour of the opening due to poor selectivity. In order to achieve the above and other objectives, the present invention provides a method for manufacturing an opening. After lithographic lithography is performed to form a vertical profile opening, a mixed gas (Ar / 02) of argon and oxygen is selected as the plasma source and utilized. The plasma generated by the Ar and 02 gases, while removing the photoresist, performs a circular arcing step with a chemical reaction on the top vertical corner (comer) of the opening to complete the required opening profile. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is described below in detail with the accompanying drawings as follows: Brief description of the drawings: FIG. 1A 1D is a cross-sectional view showing a conventional manufacturing process of an opening. Figure 2 shows a cross-sectional view of an opening. Figures 3A to 3C show cross-sectional views of an opening manufacturing process according to a preferred embodiment of the present invention. 5 papers—CNS A4: ^ (21GX297 male dragon)--tn i ^ i. T (please read the precautions on the back before filling this page), ΤΓ · line 3664twf.doc / 006 A7 B7 V. Description of the invention (y) Symbols of drawings: 100, 300: substrate 102, 302: conductive region 104, 304: dielectric layer 106, 306: photoresist layer-108, 308: top corner 108a , 308a: Arc-shaped top corners 110, 112, 114, 310, 312: Opening embodiments Figures 3A to 3C show cross-sectional views of a manufacturing process of an opening according to a preferred embodiment of the present invention. The present invention is a manufacturing method for forming an opening in an insulating layer. Therefore, in a 'semiconductor process, for example, it can be used to form a contact window opening, an interlayer window opening, or an opening formed in a metal damascene process, and an interlayer window is used here. The opening is taken as an example to describe a method for manufacturing an opening in a preferred embodiment of the present invention. Referring to FIG. 3A, a substrate 300 is provided. The substrate 300 has a transistor structure (not shown) and a conductive region 302. The conductive region 302 is, for example, a metal layer, a polycrystalline silicon conductive layer doped with impurities, or an impurity doped. Area. Thereafter, a dielectric layer 304 (or green insulation layer) is formed on the substrate 300. The material of the dielectric layer is, for example, silicon dioxide. A photoresist layer 306 is then formed on the dielectric layer 304 to define an insulating layer 304. Referring to FIG. 3B, the photoresist layer 306 is used as a mask, and then the dielectric layer 304 is etched to form a dielectric window opening 310 whose top corner 308 is vertical. The typical method includes anisotropic etching. 6 paper sizes are applicable to Chinese national standards (CNS > A4 specifications (2 丨 〇 > < 297 public directors) (Please read the note on the back before filling in (This page)-Installed · Printed by the Central Standards Bureau of the Ministry of Economic Affairs, Consumer Cooperatives and Printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Shellfish Consumer Cooperatives, 434125 3664twf.doc / 006 A 7 B7 V. Description of the invention (_T) Use of C4F8 / Ar As a dry etching gas source, the step of forming the opening 310 is performed. Please refer to FIG. 3C, and thereafter, different from the conventional method, the present invention uses a mixed gas (Al702) of argon and oxygen as the gas source of the plasma. In the same reaction chamber, the steps of removing the photoresist layer 306 and arcing the top corner 308 of the opening 310 are performed simultaneously. An ashing reaction is performed using an oxygen plasma system to remove the photoresist layer 306, and an argon plasma system is used to bombard the top The corners are arc-shaped openings. At this time, while removing the photoresist layer 306, a voltage that can generate radio frequency is applied in the plasma reaction chamber, so that the Ar particles generated by the plasma can be directed to the vertical top of the dielectric window opening 310. angle 308 performs an accelerated ion bombardment step. During the reaction, the power input to generate a radio frequency bias (bias power) is about 0.00 300 watts, and the power required to maintain the operation of the plasma (source power) is about 1500 to 4500 watts. Around, the Ar gas flow rate is controlled at about 0.001 to 400 sccm (standard cubic centimeter per minute, ie cm / min or ml / min), and the oxygen gas flow rate is controlled at about 100 to 500 seem. By adjusting different reaction chambers Pressure (chamber pressure), gas flow of argon and oxygen, the oxygen plasma will decompose the CxHyFz compound produced during the etching of the dielectric layer 304 of the oxide material to generate fluorine particles. This fluorine particle will be accompanied by argon particles The vertical top corner 308 of the dielectric window opening 310 is impacted, and chemically reacts with the dielectric layer 304 to form an opening 312 of the top corner 308a after the arcing step, as shown in FIG. 3C. A material such as a conductive layer is inserted into the opening 312 of the arced corner for subsequent processes. "In the preferred embodiment of the present invention, Ar / 02 gas is used as the plasma. 7 This paper is suitable China National Standards (CNS) 8 4 ^ (2Iclx297 public director) I ^ ---- install ---------- order ----} line. * (Please read the precautions on the back before filling this page)- ¾ .. $ 2j4twf.d0_ A7 .- ______B7_ 5. Description of the invention (6) The source can remove the photoresist and also perform the step of rounding the top corners of the opening. This not only achieves the goal of arc opening in the same reaction chamber, but also simplifies the steps of the entire process. In addition, the oxygen plasma used in the present invention decomposes the CxHyFz compound generated during the etching of the oxide to generate fluorine particles, and the generated fluorine ions and the Ar plasma hit the vertical corners of the opening and chemically react with the oxide Arcing the openings with vertical corners, and thus arcing the corners of the opening with a chemical reaction, has better selectivity and is easier to control the contour of the opening. The opening 312 in this embodiment is an example of a via of an interlayer window. Therefore, after the opening 312 is formed, the exposed conductive region 102 is a conductive layer. If the opening 312 is taken as an example of a contact window opening, after the opening 312 is formed, what is exposed is a doped region. Furthermore, taking the damascene process as an example, the conductive layer is exposed. The present invention can be applied to processes such as openings of vias, contact windows, or openings formed by metal inlays. In summary, the present invention is characterized in that: 1. The present invention uses eight 1702 gas as the plasma source, which not only removes the photoresist, but also rounds the corners of the opening. 2. The steps of removing photoresist and performing arc opening in the present invention are performed in the same reaction chamber, which simplifies the steps of the manufacturing process. 3. The present invention uses a chemical reaction plus a physical method to arcuate the opening, which has better selectivity and can easily control the formation contour of the opening. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 8 The dimensions of this paper are applicable to Chinese national samples) A4 size (210X297 mm) — J -------'- ^ — ^ ------ ITI-^ ——.--} line_ * (Please (Please read the notes on the back before filling out this page) Printed by Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs