經濟部智慧財產局員工消費合作社印製 43A722 6〇61twf.d〇c/006 Μ _____B7____ 五、發明說明（/) 本發明是有關一種電漿淸洗機台內晶圓排列方式，特 別是一種可以使電漿淸洗機台對光阻蝕刻率分佈均勻的晶 圓排列方式。 現在廣泛應用在半導體製程上的乾蝕刻（Dry Etching) 技術*主要有兩種：一是濺擊蝕刻（Sputtering Etch);另一 爲電漿蝕刻(Plasma Etching)。其中，電漿蝕刻會被運用在 材質層的剝除（Stripping)之上。它是利用電漿，將反應氣 體分子，解離成對薄膜材質具有反應性的(Reactive)離子， 然後藉著離子與薄膜間的化學反應，把曝露在電漿下的薄 膜，反應成揮發性的生成物，而後被真空系統抽離，來進 行蝕刻反應。 一般而言，電漿蝕刻可以運用在光阻薄膜、氧化矽薄 膜及氮化矽薄膜的去除，例如，利用含氟的氧電漿可以去 除氧化矽層及氮化矽層，利用氧電漿可以去除光阻層。特 別是光阻的去除，一般是利用濕式的方式去除光阻，主要 是利用有機溶液或無機溶液對光阻進行結構性的破壞，將 光阻溶於溶劑中。但是濕式蝕刻常無法將光阻去除乾淨， 所以，氧電漿已普遍地用在薄膜蝕刻後光阻去除的步驟 上。 請參照第1A圖及第1B圖，目前批次式來去除光阻的 機台(如PSC)，其反應器100適用於蝕刻製程的設備，基 本上是由一組接往無線電頻率（Radio Frequency，RF)產生 器的電極板102, 一位於電極板102內側的蝕刻反應室104， 及一置於蝕刻反應室104內，以經穿孔的金屬所製成的圓 3 (請先閱讀背面之注意事項再填寫本頁) 裝 ---------線_ 本紙張尺度適用中國國家標準（CNS)A4規格<210x297公釐） 434722 6061twf.doc/006 A7 B7 經濟部智慧財產局貝工消費合作社印製 五、發明說明（之） 筒(Cylinder)106所組合而成的。被蝕刻的晶圓片108則是 垂直的並放在一個或是數個晶舟(Boat)llO上，然後擺入圓 筒106中。反應氣體將從氣體輸入端112進入反應室內， 經電極板102的加電壓而產生電漿。電漿中的離子團或電 子因爲圓筒106的屛障，而不會到達晶圓表面，只有原子 團（Radical)能經由擴散而進入圓筒中，到達晶圓片的表面， 然後藉由原子團的反應性，以化學反應的方式把晶圓片上 需被蝕刻的薄膜加以去除。這種反應器的設計，通常使用 在光阻去除之上。所使用的氣體爲氧氣，藉由氧和光阻內 的碳和氫元素的化學反應，形成具揮發性的一氧化碳、二 氧化碳和水，然後經由真空系統由抽氣口 114將其排出。 請參照第2圖，目前習知晶圓片在晶舟上均採晶圓正 面朝向同一側而晶圓片背面朝向另一側的平行排列方式。 請參照第3圖，由實際操作的數據中可以發現，同一批位 於晶舟上的晶圓片，會因爲排列位置的前後不同而有不同 的光阻去除速率，位於晶舟前後兩端，位置1及位置6， 的晶圓片的光阻去除速率遠低於位於晶舟中間位置，位置 3及位置4，的晶圓片的光阻去除速率。在這種情況下， 常會使前後端部分的晶圓片上的光阻去除不乾淨，而導致 後續製程的問題，降低了製程的良率。 有鑑於此，本發明的目的在提供一種關於電漿淸洗機 台內晶圓排列方式，可以使電漿淸洗機台對光阻蝕刻率分 佈均勻的晶圓排列方式。 本發明的另一目的是提供一種電漿淸洗機台內晶圓片 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) · I I I I I l· I — — — — — — — - 43472 6 〇6ltwf , doc/006 A7 B7 經濟部智慈財產局貝工消費合作社印製 五、發明說明（_) 排列方式，可以對材料層進行鈾刻時，蝕刻率的均勻度提 高，而避免產生蝕刻不完全，而影響到後續的製程良率 材料層可以爲氧化砂層或是氮化砂層。 根據本發明的目的所提出的電漿淸洗機台內晶圓排列 方式，其特徵在於在於晶圓片在晶舟上的排列方式改採晶 圓片的正面對另一晶圓片的正面或晶圓片的背面對另一晶 圓片的背面的方式平行排列，並進行蝕刻。如此的排列方 式，可以改善位於晶舟前後兩端的晶圓片的光阻去除速率 遠低於位於晶舟中間位置的晶圓片的光阻去除速率的問 題；較佳的蝕刻率分佈亦可以改善前端與後端晶圓片上光 阻淸除不乾淨的問題。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖示，作詳細 的說明。 圖式之簡單說明： 第1A和1B圖係繪示習知電漿蝕刻反應室的正視示意 結構圖與側視示意結構圖； 第2圖係繪示習知電漿淸洗機台內晶圓排列方式； 第3圖係繪示本發明所提供之電漿淸洗機台內晶圓排 列方式； 第4圖係繪示習知晶圓片排列方式與改變晶圓片排列 方式後，不同晶圓片排列位置之光阻去除率圖；以及 第5圖係繪示第4圖中，晶圓片排列位置之側視圖。 圖式之標記說明： 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I-----I 1 illl — ϊ— — — — — m 1^. 7 <請先閱讀背面之注意事項再填寫本1) 434722 6061twf.doc/006 A7 B7 經濟部智慧財產局員工消費合作杜印製 五、發明說明（+) 100 :反應器 102 :電極板 104 :反應室 106 :圓筒 108 :晶圓片 110 :晶舟 112 :氣體輸入端 114 :抽氣口 201、 301 :晶圓片正面 202、 302 :晶圓片背面 實施例 請參照第2圖，係繪示習知電漿淸洗機台內晶圓排列 方式，晶圓片在晶舟上均採晶圓正面201朝向同一側而晶 圓片背面202朝向另一側的平行排列方式。 請參照第3圖’係繪示本發明所提供之電漿淸洗機台 內晶圓排列方式，晶圓片在晶舟上的排列方式改採晶圓片 正面301對另一晶圓片的正面301或晶圓片背面302對另 一晶圓片背面302的方式排列。 依第2圖方式排列於晶舟之上的一批晶圓片及依第3 圖方式排列於晶舟之上的一批晶圓片，均約爲50片，置 於電漿淸洗機台內，進行光阻層的去除。 請參照第5圖，第5圖係繪示晶圓片在晶舟上之排列 情形。每一晶舟上之晶圓片分成兩匡(lot)，每一'厘內約包 括25片晶圓片。第4圖亦指出取樣晶圓片之位置1至位 6 本紙張尺度適用中國國家標準（CNS)A4規格（2〗0 X 297公釐） — — — — — — — — — ^•11 I------- r - (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局貝工消費合作社印製 434722 6 061twf. doc /006 八7 _________B7_ 五、發明說明（f) 置6。 請參照第4圖，第4圖係繪示習知晶圓片排列方式與 改變晶圓片排列方式後，不同晶圓片排列位置之光阻去除 率圖。其中空心方形符號表示習知晶圓片排列方式，由晶 舟上位置1至位置6(請參照第5圖)取樣之晶圓片之光阻 去除率；空心圓形符號表示依本發明所提供之電漿淸洗機 台內晶圓排列方式，由晶舟上位置1至位置6(請參照第5 圖）取樣之晶圓片之光阻去除率。由去樣結果所繪之圓形 可以發現，根據本發明的目的所提出的電漿淸洗機台內晶 圓排列方式，確實可以得到分佈較均勻的蝕刻率，爲繪示 第4圖的實驗數據。 第1表 匣 晶圓片編 位置 改變排列方式 原來排列方式 號 後 24 1 399.04 396.56 1 6 2 382.10 435.54 11 3 398.49 445.83 17 4 392.62 457.23 2 2 5 392.45 405.65 22 6 407.00 401.48 差値範 24.9 60.7 圍 標準差 8.37 25.7 由第1表中的數據分析，依習知晶圓片排列方式’在 7 本紙張尺度適用令國國家標準（CNS)A4規格（210 x 297公釐） (請先閲讀背面之注意事項再填寫本頁) r ，裝---1----訂------- —線 434722 6061twf.doc/006 A7 B7 經濟郤智慧財產局員工消費合作社印製 五、發明說明（g) 以電漿進行光阻去除時，位於晶舟前後兩端，位置丨及位 置6’的晶圓片的光阻去除速率遠低於位於晶舟中間位置， 位置3及位置4，的晶圓片的光阻去除速率，其光阻之蝕 刻去除差距最大可達60.7埃/每分鐘，而其標準差(Standard Deviation)爲25.7埃/每分鐘。依本發明所提供之電漿淸洗 機台內晶圓排列方式在以電漿進行光阻去除時，位於晶舟 前後兩端’位置1及位置6 ’的晶圓片的光阻去除速率遠 低於位於晶舟中間位置’位置3及位置4，的晶圓片的光 阻去除速率，其光阻之蝕刻去除差距最大只有24.9埃/每 分鐘’而其標準差僅只爲8.37埃/每分鐘。由此可知，依 本發明所提供之電漿淸洗機台內晶圓排列方式在以電漿進 行光阻去除時，確實可以改善位於晶舟前後兩端的晶圓片 的光阻去除速率遠低於位於晶舟中間位置的晶圓片的光阻 去除速率的問題；較佳的蝕刻率分佈亦可以改善前端與後 端晶圓片上光阻淸除不乾淨的問題。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內’當可作各種之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 8 本紙張尺度適用t國國家標準（CNS)A4規格（21〇 X 297公爱 C請先閱讀背面之注意事項再填寫本頁) -r ;裝-------^—訂--------線Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 43A722 6〇61twf.d〇c / 006 Μ _____B7____ V. Description of the Invention (/) The present invention relates to a wafer arrangement method in a plasma cleaning machine, especially a method for Wafer arrangement for uniformly distributing the photoresist etching rate to the plasma cleaning machine. There are two main types of dry etching (Dry Etching) technology currently used in semiconductor processes: one is Splash Etch; the other is Plasma Etching. Among them, plasma etching is applied to the stripping of the material layer. It uses a plasma to dissociate reactive gas molecules into reactive ions that are reactive to the material of the film, and then reacts the film exposed to the plasma with a chemical reaction between the ions and the film to become volatile. The product is then evacuated by a vacuum system to perform an etching reaction. Generally speaking, plasma etching can be used for the removal of photoresist films, silicon oxide films, and silicon nitride films. For example, a silicon oxide layer and a silicon nitride layer can be removed by using an oxygen plasma containing fluorine, and an oxygen plasma can be used. Remove the photoresist layer. In particular, the photoresist is removed. Generally, the photoresist is removed by a wet method. The organic solution or inorganic solution is used to structurally destroy the photoresist, and the photoresist is dissolved in the solvent. However, wet etching is often unable to remove the photoresist. Therefore, oxygen plasma has been commonly used in the photoresist removal step after thin film etching. Please refer to FIG. 1A and FIG. 1B. In the current batch-type machine (such as PSC) for removing photoresistors, the reactor 100 is suitable for the equipment of the etching process, and basically consists of a group connected to the radio frequency. , RF) generator electrode plate 102, an etching reaction chamber 104 located inside the electrode plate 102, and a circle 3 made of perforated metal placed in the etching reaction chamber 104 (please read the note on the back first) Please fill in this page for more details) Packing --------- line_ This paper size applies to China National Standard (CNS) A4 specifications < 210x297 mm) 434722 6061twf.doc / 006 A7 B7 Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Industrial and Consumer Cooperatives V. Description of Invention (之) Cylinder 106 The etched wafer 108 is vertical and is placed on one or more Boats 110, and then placed in a cylinder 106. The reaction gas will enter the reaction chamber from the gas input terminal 112, and the plasma will be generated by the voltage applied to the electrode plate 102. The ion groups or electrons in the plasma will not reach the wafer surface due to the barrier of the cylinder 106. Only the radicals can enter the cylinder through diffusion, reach the surface of the wafer, and then react by the radicals. To remove the thin film to be etched on the wafer by chemical reaction. This reactor design is usually used for photoresist removal. The gas used is oxygen. The volatile carbon monoxide, carbon dioxide, and water are formed by the chemical reaction of oxygen and carbon and hydrogen elements in the photoresist, and then they are discharged through the suction port 114 through a vacuum system. Please refer to Fig. 2. At present, the wafers are conventionally arranged in parallel on the wafer boat with the wafer front facing the same side and the wafer back facing the other side. Please refer to Figure 3. From the actual operation data, it can be found that the same batch of wafers located on the wafer boat will have different photoresist removal rates because of the different positions. The photoresist removal rate of wafers at positions 1 and 6 is much lower than the photoresist removal rate of wafers at positions 3 and 4 in the middle of the wafer boat. In this case, the photoresist on the wafers at the front and rear parts is often removed uncleanly, which causes problems in subsequent processes and reduces the yield of the processes. In view of this, an object of the present invention is to provide a wafer arrangement method in a plasma cleaning machine, which can make the plasma cleaning machine uniformly distribute the photoresist etching rate. Another object of the present invention is to provide a wafer washing machine in a plasma washing machine. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling in this Page) · IIIII l · I — — — — — — — —-43472 6 〇6ltwf, doc / 006 A7 B7 Printed by Shellfish Consumer Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs 5. Description of the invention (_) When the layer is etched with uranium, the uniformity of the etching rate is improved, and incomplete etching is avoided, which affects the subsequent process yield rate. The material layer may be an oxide sand layer or a nitrided sand layer. According to the purpose of the present invention, the wafer arrangement in a plasma cleaning machine is characterized in that the arrangement of wafers on a wafer boat is changed from the front side of a wafer to the front side of another wafer or The back surface of the wafer is aligned in parallel with the back surface of the other wafer and etched. Such an arrangement can improve the problem of the photoresist removal rate of wafers located at the front and rear ends of the wafer boat, which is much lower than the photoresist removal rate of wafers located at the middle position of the wafer boat. A better etching rate distribution can also be improved. The photoresist on the front and back wafers is not cleaned. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, preferred embodiments are described below in conjunction with the accompanying drawings for detailed description. Brief description of the drawings: Figures 1A and 1B are schematic front and schematic structural diagrams of a conventional plasma etching reaction chamber; Figure 2 is a wafer in a conventional plasma cleaning machine Arrangement; Figure 3 shows the wafer arrangement in the plasma washer provided by the present invention; Figure 4 shows the conventional wafer arrangement and different wafer arrangements after changing the wafer arrangement A photoresist removal rate diagram of the arrangement position; and FIG. 5 is a side view of the arrangement position of the wafers in FIG. 4. Explanation of drawing symbols: 5 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) I ----- I 1 illl — ϊ — — — — — m 1 ^. 7 < Please Read the precautions on the back before filling in this 1) 434722 6061twf.doc / 006 A7 B7 Printed by the consumer cooperation of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention (+) 100: reactor 102: electrode plate 104: reaction chamber 106 : Cylinder 108: Wafer 110: Wafer 112: Gas input 114: Suction port 201, 301: Wafer front 202, 302: Wafer back Example Please refer to Figure 2 for an example. In the plasma cleaning machine, the wafers are arranged in a parallel arrangement on the wafer boat, with the wafer front side 201 facing the same side and the wafer back side 202 facing the other side. Please refer to FIG. 3 ', which shows the arrangement of wafers in the plasma cleaning machine provided by the present invention. The arrangement of wafers on the wafer boat is changed from the front side of wafer 301 to another wafer. The front surface 301 or the wafer back surface 302 is aligned with the other wafer back surface 302. A batch of wafers arranged on the wafer boat as shown in FIG. 2 and a batch of wafers arranged on the wafer boat as shown in FIG. 3 are both placed on a plasma washing machine. Inside, removing the photoresist layer. Please refer to Fig. 5, which shows the arrangement of wafers on the wafer boat. The wafers on each wafer boat are divided into two lots, each of which includes about 25 wafers. Figure 4 also indicates the positions of the sampling wafers from 1 to 6. The paper size applies to the Chinese National Standard (CNS) A4 specification (2〗 0 X 297 mm) — — — — — — — — — — ^ • 11 I- ------ r-(Please read the notes on the back before filling out this page) Printed by Shelley Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 434722 6 061twf. doc / 006 8 7 _________B7_ V. Description of Invention (f) Set 6. Please refer to Fig. 4. Fig. 4 is a diagram showing the photoresist removal rate of different positions of the wafers after the conventional arrangement of the wafers and changing the arrangement of the wafers. The hollow square symbol indicates the conventional arrangement of wafers. The photoresist removal rate of wafers sampled from position 1 to position 6 (see Figure 5) on the wafer boat; the hollow circular symbol indicates the power provided by the present invention. The arrangement of the wafers in the slurry washing machine, the photoresist removal rate of the wafers sampled from the position 1 to position 6 on the wafer boat (see Figure 5). It can be found from the circle drawn by the sampling results that the wafer arrangement in the plasma cleaning machine according to the purpose of the present invention can indeed obtain a relatively uniform distribution of the etching rate. The experiment shown in Figure 4 is shown. data. The number of wafers in the first table box is changed after the original arrangement number. 24 1 399.04 396.56 1 6 2 382.10 435.54 11 3 398.49 445.83 17 4 392.62 457.23 2 2 5 392.45 405.65 22 6 407.00 401.48 Difference range 24.9 60.7 Standard Difference 8.37 25.7 According to the analysis of the data in Table 1, the wafer arrangement method is known to apply the National Standard (CNS) A4 specification (210 x 297 mm) in 7 paper sizes (please read the precautions on the back first) (Fill in this page) r, install --- 1 ---- order ------- --line 434722 6061twf.doc / 006 A7 B7 Printed by the Economic and Intellectual Property Bureau Staff Consumer Cooperatives V. Invention Description (g) When the photoresist is removed by a plasma, the photoresist removal rate of wafers located at the front and back ends of the wafer, at positions 丨 and 6 'is much lower than that of wafers located at the middle of the wafer, at positions 3 and 4. The maximum photoresist removal rate is 60.7 Angstroms / minute, and the standard deviation is 25.7 Angstroms / minute. According to the present invention, the arrangement of the wafers in the plasma cleaning and washing machine table, when the photoresist is removed by the plasma, the photoresist removal rate of the wafers located at the positions 1 and 6 at the front and rear ends of the wafer boat is far. Lower than the photoresist removal rate of wafers located in the middle position of the wafer, 'Position 3 and Position 4, the maximum etch removal gap of the photoresist is only 24.9 Angstroms per minute' and its standard deviation is only 8.37 Angstroms per minute. . It can be known that the wafer arrangement in the plasma cleaning machine provided by the present invention can indeed improve the photoresist removal rate of wafers located at the front and rear ends of the wafer boat when the photoresist is removed by the plasma. The problem of the photoresist removal rate of wafers located in the middle of the wafer boat; a better etch rate distribution can also improve the problem of unclean photoresist removal on the front and back wafers. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various modifications and retouches without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. 8 This paper size is applicable to the national standard (CNS) A4 specification (21〇X 297 public love C, please read the precautions on the back before filling this page) -r; install ------- ^-order- ------line