TW434416B - Exposure device, scanning exposure device and scanning exposure method - Google Patents

Exposure device, scanning exposure device and scanning exposure method Download PDF

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Publication number
TW434416B
TW434416B TW086114058A TW86114058A TW434416B TW 434416 B TW434416 B TW 434416B TW 086114058 A TW086114058 A TW 086114058A TW 86114058 A TW86114058 A TW 86114058A TW 434416 B TW434416 B TW 434416B
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TW
Taiwan
Prior art keywords
substrate
platform
aforementioned
photomask
patent application
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TW086114058A
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Chinese (zh)
Inventor
Akimitsu Ebihara
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging

Abstract

Since a mask stage 16 and a substrate stage 14 of the present invention are supported by being floated above a base member 12, both stages 16 and 14 are driven by a linear motor 13 along a scanning direction in the opposite directions by non-contacting way, and the momentum is kept without permitting the base member 12 and other parts to apply any force to the stages 16 and 14 at this time. Since the mass ratio of the stage 16 to the stage 14 are set at the same value as the reduction ratio of a projection optical system, the speed ratio of the stage 16 to the stage 14 becomes the inverse number of the reduction ratio of the projection optical system by the principle of momentum conservation, and both stages 16 and 14 are accurately and synchronously controlled, which also suppresses the tilt and rocking of the whole device and improves the synchronous performance of a mask stage with a substrate stage.

Description

經濟部智慧財產局員工消費合作社印製 *，孓 4» 1 6 A7 B7 五、發明說明（/ ) [發明所屬之技術領域] 本發明係關於曝光裝置及曝光方法；更詳細而言，係 與藉由使用照明光來同步掃描保持於光罩平台的光罩及保 持於基板平台基板平台的基板，並經由投影光學系統而將 形成於光罩的半導體電路圖案(pattern)及液晶電路圖案複 製至感光基板的曝光裝置，特別是，與掃描曝光裝置及掃 描曝光方法有關。 [背景技術] 進年來，以半導體元件製造用的曝光裝置而言，已開 發出可實現解像線寬在〇.5μιη以下的步進掃描(step and scan)方式（以下稱之”S&S方式”)的掃描型曝光裝置，並在 半導體生產線上正式的向著實用化積極的進行改良。此種 S&S方式的曝光裝置開示於，譬如說，（1)特開昭56-111218 號公報、（2)SPIE Vol. 1088 Optical/Laser Microlithography 11(1988)的第 424 頁〜433 頁、（3)特開平 2-229423號公報、（4)特開平4-277612號公報。 其中，在上述（1)的公報中開示了 ：以使用等倍的鏡子 投影(mirror projection)的S&S方式而使光罩在掃描曝光時 的掃描方向做1度空間的移動，使半導體晶圓(wafer)向掃 描方向做掃描移動，並向著與其垂直的方向做步進移動。 再者，在上述(2)的文獻中開示了：使用具有光學透鏡與反 射鏡組合的圓弧狀縫隙(slit)視野的1/4縮小投影光學系統 ，並在掃描曝光時將光罩(或標線(recticule))與晶圓的速度 比精密的控制爲4 : 1的S&S方式的縮小投影掃描型曝光 4 i紙張尺度"i$用中國@家標準（CNS>A4ii& <2]0 X 2沿公釐) I n n ^1. n n I n ^BJ I n n I (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 五、發明說明（之） 裝置。再者，在上述（3)的公報中開示了 ：使用準分子 (excimer)雷射以做爲照明光，並將內接於通常的縮小投影 透鏡系統的圓形像視野的正六角形限制爲有效投影區域以 進行S&S方式的曝光的裝置；在上述(4)的公報中開示了： 將沿著通常的縮小投影透鏡系統的圓形像視野內的直徑的 直線縫隙（長方形)狀區域限制爲有效投影區域以進行S&S 方式的曝光的裝置。 此外，在特開平6-300973號公報中開示了：爲了獲致 更高的解析度而由複數的光學透鏡及分束器(beam splitter) 及凹面鏡所構成，適用波長在200nm以下的ArF準分子雷 射以做爲曝光用照明光的縮小投影光學系統。與此相同的 光學系統也由與本專利相同的申請人開示於特開平5-88087號公報。 在上述的各種以往的技術中，在使用縮小投影光學系 統的掃描型曝光裝置中，一般而言，是使保持標線的標線 台及保持晶圓的晶圓台是以與投影光學系統的縮小倍率的 倒數相同的速度比做掃描移動。因此，必須要個別的設置 標線台用的驅動源(如線性馬達）、及、晶圓台用的驅動源( 如線性馬達）' 及、裝置本體(body)(固定投影光學系統的圓 柱(column)等），並需要對兩方的驅動源做精密的同步控制 以使標線與晶圓保持一定速度比的做相對移動。即是，在 掃描曝光時需要對：使標線台對投影光學系統做一度空間 移動的線性馬達、及、使晶圓台對投影光學系統做一度空 間移動的線性馬達、及 '依攄個別的對各平台的投影光學 5 本紙張尺度適用中國國家標準（CNS)A4規格X 297公釐） ---— — — — —--- · I I I I I I I ^ « — — — 1 — — — —^ (請先閱讀背面之注意事項再填寫本頁> 經濟部智慧財產局員工消費合作社印製 4 344 1 A7 ____ B7 五、發明說明（3 ) 系統計測的雷射干涉計的計測値而個別的對各線性馬達做 精密控制的自動(servo)控制電路。 再者’在使用此縮小投影光學系統的掃描型曝光裝置 的場合，因爲標線台（光罩平台）及晶圓台（基板平台基板平 台）具有各種不同的動特性，因此，一般係採用特性較好的 平台係追隨特性較差的平台來進行掃描的方法。但是，特 性較差的平台會受到做爲裝置的骨架的本體的搖晃等的影 響整定較慢，爲了改善其同步性能，不僅特性較好的平台 必須是其動特性非常好的平台，而且一定需要所謂的主動 (active)除震裝置(防震裝置)等用以減少本體的搖晃的特別 的裝置，因此不但會使裝置構成複雜化也會使成本上升。 而且，如記載於上述(2)、（3)的公報的裝置，在使用從 標線到晶圓的光軸爲直線的縮小投影光學系統的掃描曝光 裝置中，因爲一般是將標線台及晶圓台均配置爲可在水平 方向移動，而且在垂直方向約距離8〇〜l5〇cm，所以標線台 係配置於曝光裝置本體的上方’會有由標線台在掃描曝光 時的掃描移動而使裝置整體傾斜，並對構成裝置本體的各 構造物（圓柱、定盤等)加上過大應力的缺點。 再者，在標線台用線性馬達及晶圓台用線性馬達的同 步控制產生不諧調，干涉計產生計測誤差(誤計數)的場合 ，也會有複製至晶圓上的鏡頭(shot)區域的圖案像在掃描方 向的複製倍率會不均勻的缺點。 本發明係有鑑於這些以往的技術所具有的缺點，其目 的係在於提供：能夠以單純的構成便能夠降低產生於構成 6 張尺度適用中國國家標準（CNS)A4規gdx297公釐） ----------I - I I -----tT'-----------^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 ，4 344 1 6 U a? B7 五、發明說明（ψ ) 裝置的構造物的應力，抑制裝置整體的傾斜及搖晃，而且 能夠改善光罩平台基板平台基板平台的同步性能的曝光裝 置及掃描曝光裝置。 本發明的其他的目的係在於提供：能夠降低產生於曝 光裝置應力，抑制裝置整體的傾斜及搖晃，而且能夠改善 光罩平台及基板平台基板平台的同步性能的掃描曝光方法 〇 [發明之開示] 本發明的第1型態係在於提供：一種使光罩及感光基 板持續同步移動，並經由投影光學系統而將形成於前述光 罩的圖案複製至前述感光基板的曝光裝置，係具有： 浮動支撐於基座構件上的基板平台基板平台'及、 具有前述基板平台基板平台的質量乘以前述投影光學 系統的縮小倍率的質量，且浮動支撐於前述基座構件上的 光罩平台、及、 設置於前述兩平台之間，並驅動前述基板平台基板平 台及光罩平台以使前述光罩及基板互相逆向移動的第1線 性馬達。 此曝光裝置因爲其光罩平台及基板平台基板平台爲浮 動支撐於基座構件上，所以兩平台會由第1線性馬達沿著 移動方向以非接觸的互相逆向驅動，此時，此兩平台的動 作對基座構件外不會產生任何其他作用力，而能夠保持其 動量。此處，因爲係將光罩平台的質量設定爲基板平台基 板平台的質量乘以投影光學系統的縮小倍率，因此由動量 7 本紙張尺度適用中國國家標準（CNS)A4規掊（210 x 297公釐） — — — — —-----I - I I I I 1 I I 訂--------碎 <請先閱讀背面之注音？^項再填寫本頁) 4 344 1 A7 _ B7 五、發明說明（夂） 守®定理可得光罩平台與基板平台基板平台的速度比係反 比於投影光學系統的縮小倍率，而能夠正確的同步控制兩 平台。再者，因爲系統整體的重心位置幾乎沒有改變，因 此兩平台的移動（光罩及基板的同步掃描）並不會使包含基 座的本體搖晃或傾斜。 在本發明的曝光裝置中，前述投影光學系統可以是將 形成於前述光罩的圖案的倒立像投影至前述感光基板的光 學系統β藉由此種構成，即使光罩的圖案係爲非對稱的形 狀，在光罩平台及基板平台基板平台由第1線性馬達互相 逆向的做同步移動時，也能夠將圖案的像正確的投影至感 光基板上》 在本發明的曝光裝置中，係將前述感光基板水平的保 持於基板平台基板平台上且將前述光罩垂直的保持於光罩 平台上，而且，前述投影光學系統可以是包含複數的透過 光學元件、分束器、及、反射光學元件，並將配置於物體 面的前述光罩的圖案以特定的縮小倍率投影至配置於結像 面的前述感光基板上。藉由構成此種曝光裝置，譬如說， 便能夠將申請專利範圍第4項所記載之半TTL對準(half TTL alignment)檢測系統配置於經由分束器而與光罩平台爲 相反側，在此種場合，便能夠由半TTL對準檢測系統分別 或同時檢測出經由分束器而形成於光罩的對準標誌及感光 基板上的對準標誌，並可以由單一的檢測系統兼做爲標線 對準標誌的檢測及晶圓對準標誌的檢測。 在本發明的曝光裝置中，可在前述基座構件及前述光Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs *, 孓 4 »1 6 A7 B7 V. Description of Invention (/) [Technical Field to which the Invention belongs] This invention relates to an exposure device and an exposure method; more specifically, it relates to The reticle held on the reticle stage and the substrate held on the substrate stage are synchronously scanned using the illumination light, and the semiconductor circuit pattern and liquid crystal circuit pattern formed on the reticle are copied to the reticle via the projection optical system. An exposure apparatus for a photosensitive substrate relates, in particular, to a scanning exposure apparatus and a scanning exposure method. [Background Art] In recent years, in the case of an exposure device for semiconductor device manufacturing, a step and scan method (hereinafter referred to as "S & S") capable of realizing a resolution line width of 0.5 μm or less has been developed. Method "), and it has been formally and actively improved towards practical application in semiconductor production lines. Such an S & S-type exposure apparatus is shown in, for example, (1) Japanese Patent Application Laid-Open No. 56-111218, (2) SPIE Vol. 1088 Optical / Laser Microlithography 11 (1988), pages 424 to 433, (3) Japanese Unexamined Patent Publication No. 2-229423 and (4) Japanese Unexamined Patent Publication No. 4-277612. Among them, in the above-mentioned publication (1), it is disclosed that in the S & S method using an equal magnification mirror projection, the scanning direction of the photomask during scanning exposure is moved by 1 degree, so that the semiconductor crystal A circle moves in a scanning direction, and moves stepwise in a direction perpendicular thereto. Furthermore, in the above document (2), it is disclosed that a 1 / 4-reduction projection optical system using an arc-shaped slit field of view with a combination of an optical lens and a mirror is used, and a photomask (or Restriction (recticule) and wafer speed ratio is precisely controlled to 4: 1 S & S mode reduction projection scan-type exposure 4 i paper size " i $ 中国 @ 家 标准 (CNS > A4ii & < 2] 0 X 2 along the mm) I nn ^ 1. Nn I n ^ BJ I nn I (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs ()) Device. Furthermore, in the above-mentioned publication (3), it is disclosed that an excimer laser is used as the illumination light, and that a regular hexagon of a circular image field of view that is internally reduced to a projection lens system is restricted to be effective An apparatus for performing S & S exposure on a projection area; disclosed in the above-mentioned (4): Limiting a linear slit (rectangular) area along a diameter in a field of view of a circular image of a general reduction projection lens system This device is an effective projection area to perform S & S exposure. In addition, Japanese Unexamined Patent Publication No. 6-300973 discloses that a plurality of optical lenses, a beam splitter, and a concave mirror are used to obtain higher resolution, and ArF excimer mines with a wavelength of 200 nm or less are applicable. A reduction projection optical system that emits illumination light for exposure. The same optical system is disclosed in Japanese Patent Application Laid-Open No. 5-88087 by the same applicant as the present patent. Among the various conventional technologies described above, in a scanning exposure apparatus using a reduction projection optical system, generally, a reticle stage holding a reticle and a wafer stage holding a wafer are formed in a manner similar to the projection optical system. Reduce the magnification to the same speed as the scan movement. Therefore, it is necessary to separately set a driving source (such as a linear motor) for the marking stage, and a driving source (such as a linear motor) for the wafer stage ', and a device body (a cylinder for fixing the projection optical system ( column), etc.), and precise synchronization control of the two driving sources is needed to make the marking line and the wafer maintain a certain speed ratio for relative movement. That is, during scanning exposure, it is necessary to: linear motors that make the reticle stage move the projection optical system by one degree, and linear motors that make the wafer stage move the projection optical system by one degree, and 'depend on individual Projection optics for each platform 5 This paper size applies Chinese National Standard (CNS) A4 specification X 297 mm) ----- — — — — --- IIIIIII ^ «— — — 1 — — — — ^ (Please Read the precautions on the back before filling in this page> Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 344 1 A7 ____ B7 V. Description of the invention (3) Measurement of the laser interferometer measured by the system The servo motor is a servo control circuit that is precisely controlled. Furthermore, in the case of using this type of scanning exposure device that reduces the projection optical system, the marking stage (photomask stage) and wafer stage (substrate stage substrate stage) It has a variety of different dynamic characteristics. Therefore, generally, a platform with a better characteristic is used to follow a platform with a poor characteristic to scan. However, a platform with a poor characteristic will be treated as The setting of the body of the device ’s body is slow to set. In order to improve its synchronization performance, not only a platform with good characteristics must be a platform with very good dynamic characteristics, but also a so-called active vibration isolation device (anti-vibration) Special devices, such as devices, are used to reduce the shake of the body, which not only complicates the device structure but also raises costs. In addition, devices such as those described in the above-mentioned publications (2) and (3) are being used In the scanning and exposure device of the reduction projection optical system in which the optical axis of the line to the wafer is a straight line, the reticle stage and the wafer stage are generally configured to be movable in the horizontal direction, and the distance in the vertical direction is about 80 to 15 〇cm, so the marking line is arranged above the exposure device body. There will be the entire tilt of the device by the scanning movement of the marking line during the scanning exposure, and the structures (cylinder, plate, etc.) that make up the device body will be tilted. ) Plus the disadvantage of excessive stress. Furthermore, the synchronous control of the linear motor for the marking table and the linear motor for the wafer table generates dissonance, and the interferometer generates a measurement error (miscount). In addition, there is also a disadvantage that a pattern image copied in a shot region on a wafer may have a non-uniform copy magnification in a scanning direction. The present invention is made in view of the shortcomings of these conventional technologies, and its object is to provide : Can be reduced with a simple composition. It can be produced in 6 scales. Applicable to China National Standard (CNS) A4 gdx297 mm.) ---------- I-II ----- tT '- --------- ^ (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, 4 344 1 6 U a? B7 V. Description of Invention (ψ) Device An exposure device and a scanning exposure device capable of suppressing the overall tilt and shake of the device, and capable of improving the synchronization performance of the mask platform substrate platform substrate platform. Another object of the present invention is to provide a scanning exposure method which can reduce the stress generated in the exposure device, suppress the overall tilt and shake of the device, and can improve the synchronization performance of the photomask stage and the substrate stage substrate stage. [Invention of the Invention] A first aspect of the present invention is to provide an exposure device that continuously moves a photomask and a photosensitive substrate synchronously, and replicates a pattern formed on the photomask to the photosensitive substrate via a projection optical system, and includes: a floating support Substrate platform substrate platform on the base member 'and a photomask platform having the aforementioned substrate platform substrate platform multiplied by the above-mentioned reduction magnification quality of the projection optical system and floatingly supported on the aforementioned base member, and A first linear motor that drives the substrate platform, the substrate platform, and the photomask platform between the two platforms so that the photomask and the substrate move in opposite directions to each other. Since the photomask platform and the substrate platform of the exposure device are floatingly supported on the base member, the two platforms are driven by the first linear motor in a non-contact and reverse direction along the moving direction. At this time, the two platforms The action will not generate any other force outside the base member, and can maintain its momentum. Here, because the mass of the photomask platform is set to the mass of the substrate platform and the reduction ratio of the projection optical system, the momentum 7 paper size applies the Chinese National Standard (CNS) A4 Regulation (210 x 297 mm) Li) — — — — —----- I-IIII 1 II Order -------- Broken < please read the phonetic on the back? ^ Please fill out this page again) 4 344 1 A7 _ B7 V. Explanation of the invention (夂) The speed ratio of the mask platform and the substrate platform can be obtained by Shou® Theorem. The speed ratio of the substrate platform is inversely proportional to the reduction ratio of the projection optical system, and it can be accurately calculated. Control both platforms simultaneously. Furthermore, because the position of the center of gravity of the overall system has hardly changed, the movement of the two platforms (synchronous scanning of the photomask and substrate) does not shake or tilt the body containing the base. In the exposure apparatus of the present invention, the projection optical system may be an optical system β that projects an inverted image of a pattern formed on the photomask onto the photosensitive substrate, even if the pattern of the photomask is asymmetric. Shape, when the photomask stage and the substrate stage are moved in opposite directions by the first linear motor, the pattern image can be accurately projected onto the photosensitive substrate. In the exposure apparatus of the present invention, the aforementioned photosensitive The substrate is horizontally held on the substrate platform and the photomask is vertically held on the photomask platform, and the projection optical system may include a plurality of transmission optical elements, a beam splitter, and a reflection optical element, and A pattern of the photomask disposed on the object surface is projected onto the photoconductive substrate disposed on the image plane at a specific reduction ratio. By constituting such an exposure device, for example, the half TTL alignment detection system described in item 4 of the scope of patent application can be arranged on the side opposite to the mask stage via the beam splitter, and In this case, the semi-TTL alignment detection system can separately or simultaneously detect the alignment mark formed on the photomask and the alignment mark on the photosensitive substrate through the beam splitter, and can be used as a single detection system. Inspection of reticle alignment marks and wafer alignment marks. In the exposure apparatus of the present invention, the base member and the light

S ^紙張尺度用中®國家標準（CNS>A4規格（210 >< 297^髮) ' 〈請先Μ讀背面之注意事項再填寫本頁) 裝---！ltT---------碑 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 344 1 6 _ ~_B7___ 五、發明說明U ) 罩平台之間設置驅動該當光罩平台的第2線性馬達。在此 種構造中，在第1線性馬達關閉(OFF)的狀態下，藉由驅動 第2線性馬達便能夠對基座構件獨立的驅動光罩平台，由 此便能夠對光罩平台的位置進行重置(reset)及微調整。 在本發明的曝光裝置中，可在前述基座構件及前述基 板平台基板平台之間設置驅動該當基板平台基板平台的第 3線性馬達。在此種構造中，在第1線性馬達(及第2線性 馬達)關閉的狀態下，藉由驅動第3線性馬達便能夠對基座 構件獨立的驅動基板平台基板平台，由此便能夠對基板平 台基板平台的位置進行重置及微調整。 在本發明的曝光裝置中，可在前述第2線性馬達及第 3線性馬達的至少一方併設由前述第1線性馬達對前述兩 平台的同步移動時的速度比做微調整的再生制動控制電路 。在此種構造中，藉由由於再生制動控制電路對第2線性 馬達及第3線性馬達的至少一方進行再生制動作用，便可 由第1線性馬達使互相爲逆向移動的光罩平台及基板平台 基板平台的至少一方的外觀上的質量增加，而能夠對兩平 台的移動時的速度比做微調整。此處，再生制動係指藉由 使馬達(motor)作用爲一種發電機而產生制動作用，由此而 能夠使由第1線性馬達所驅動的負荷增加(即是，使光罩平 台及基板平台基板平台的至少一方的外觀上的質量增加）。 具有此種構成的曝光裝置在兩平台的質量比並未正確的設 定爲所希望的値的場合，能夠調整兩平台的速度比以確保 所希望的同步性能，此外，也可以故意的使兩平台的質量 9 ----— — — — ——— ---- I I I I ^ . --------ί^ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國固家標準（CNS)A4規格（210 X 297公釐） '4 344 1 A7 B7 五、發明說明（） (請先閱讀背面之注意事項再填寫本頁) 比與所希望的値稍微不同，藉由在移動（掃描）時適度的調 整再生制動量使兩平台的速度比一直是與投影光學系統的 縮小倍率的倒數一致，便能夠在即使是動量無法完全保存 的場合，也能夠確保安定的同步性能。 在本發明的曝光裝置中，前述基板平台可以是具有： 驅動向與前述感光基板同步移動的第1方向的第1平台、 及、保持前述感光基板並與前述第1平台一體的移動向前 述第1方向且由第1平台所引導而能夠移動向與前述第1 方向垂直的第2方向的第2平台。若是構成此種曝光裝置 ，便能夠藉由反覆的使保持基板的第2平台與第1平台一 體的移動向第1方向而進行掃描曝光，其次使第2平台相 對於第1平台移動向與第1方向垂直的第2方向，便易於 實現所謂的步進掃描方式的曝光。 本發明的第2型態係在於提供：一種具備具有其光罩 及基板約爲垂直的光軸的投影光學系統，並經由前述投影 光學系統而將前述光罩的圖案複製至前述感光基板的掃描 曝光裝置，係具有： 基座、及、 經濟部智慧財產局員工消費合作社印製 在前述基座上移動前述光罩的第1平台、及、 在前述基座上移動前述基板的第2平台、及、 爲了以對應於前述投影光學系統的倍率的速度比來同 步移動則述光罩及則述基板，而連接至前述第1平台及前 述第2平台的驅動系統； 前述驅動系統係使前述第1平台及前述第2平台沿著 10 本紙張尺度適用中國國家標準（CNS)A4規格⑵公髮) " 經濟部智慧財產局員工消費合作杜印製 4 34-4 1 6 A7 B7 五、發明說明（) 特定方向以逆向驅動，並使由前述同步移動所產生的反作 用力約互相抵銷β 本發明的第3型態係在於提供：一種具經由投影光學 系統而將光罩的圖案複製至基板的掃描曝光方法’係： 使前述光罩及前述基板配置於與前述投影光學系統的 光軸垂直的同一平面內， 將前述光罩的圖案的部份倒立像投影至前述基板上’ 使前述光罩及前述基板沿著前述平面上的特定方向逆 向的同步移動，由此而使由前述同步移動所產生的反作用 力約互相抵銷。 本發明的第4型態係在於提供：一種曝光方法，係以 載置於光罩平台上之光罩的圖案對載置於基板平台上之基 板進行曝光；其中， 光罩平台與基板平台之一方的平台係移動於既定的方 向上： 爲減少移動一方的平台所伴隨產生之力，乃與該一方 的平台移動同步使得另一方的平台移動於與該既定方向爲 相反的方向上。 本發明的第5型態係在於提供：一種曝光方法，係以 載置於光罩平台上之光罩的圖案對載置於基板平台上之基 板進行曝光：其中， 係驅動一設於前述光罩平台與前述基板平台之間的驅 動構件，使得一方的平台移動於既定的方向上，同時另— 方的平台則與一方的平台之移動同步地移動於與該既定方 11 本紙張尺度適用中國國家標準（CNS)A4規格(2WX297公爱）'------ (請先閱讀背面之注意事項再填寫本頁) — 1-----1Τ·— —--- — I *'" 經濟部智慧財產局員工消費合作社印製 4 344 1 6a? B7 五、發明說明（？） 向相反的方向上。 本發明的第6型態係在於提供：一種曝光方法，係以 光罩上形成之圖案對基板進行曝光；係包含： 使得前述光罩於既定面上移動； 使得前述基板移動於相對前述既定面爲大致垂直的面 上。 本發明的第7型態係在於提供：一種曝光方法，係使 得於光罩上形成之圖案以具既定之投影倍率之投影光學系 統投影於基板上來對基板進行曝光；其中，係包含： 使得相對於前述投影光學系統之配置於其一側的光罩 於既定的方向移動； 使得相對於前述投影光學系統配置於與前述一側爲同 側之基板，與該光罩之移動同步移動於與前述既定方向爲 相反方向。 本發明的第8型態係在於提供：一種曝光方法，係以 形成於光罩上之圖案對基板進行曝光；其中，係包含： 使得前述光罩於既定面上移動； 使得前述基板移動於與前述既定面爲大致同一面上。 本發明的第9型態係在於提供：一種曝光裝置之製造 方法，係以光罩之圖案對基板進行曝光；其中，係包含： 設置一光罩平台； 設置一基板平台； 爲使得光罩平台與基板平台其中一方移動於既定之方 向上，並減低伴隨該其中一方之平台的移動所產生的力， 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） C請先閱讀背面之注意事項再填寫本頁} 裝------ 訂---------# 經濟部智慧財產局員工消費合作社印製 4 344 1 6 A7 B7 五、發明說明（0 ) 乃設置一驅動系統，使得另一方的平台於與該一方之平台 同步移動時將移動於與該既定方向爲相反的方向。 本發明的第10型態係在於提供：一種曝光裝置之製造 方法，係以光罩之圖案對基板進行曝光；其中，係包含： 設置一光罩平台； 設置一基板平台； 係於前述兩平台之間設置一驅動構件使得光罩平台與 基板平台其中一方於既定之方向移動，而另一方的平台於 與該一方之平台同步移動時移動於與該既定方向爲相反的 方向上。 本發明的第11型態係在於提供：一種曝光裝置之製造 方法，係以形成於光罩上之圖案對基板進行曝光；其中， 係包含： 設置一光罩平台使得前述光罩移動於既定面上； 設置一基板平台使得前述基板移動於相對前述既定面 爲大致垂直的面上。 本發明的第12型態係在於提供：一種曝光裝置之製造 方法’係使得光罩之圖案投影於基板上以對基板進行曝光 :其中，係包含： 設置一具既定之投影倍率的光學系統； 於相對於前述投影光學系統之一側，設置一用以載置 前述光罩之光罩平台； 相對於前述投影光學系統之設有光罩平台之前述〜側 ，設置一用以載置前述基板之基板平台。 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝---I----1τ---I----- 4 344 1 6'3 A7 __ B7 五、發明說明（Μ )S ^ Paper Standard for National Standards (CNS > A4 Specification (210 > < 297 ^)) 〈Please read the precautions on the reverse side before filling in this page) Install ---! ltT --------- Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics 4 344 1 6 _ ~ _B7 ___ V. Description of the invention This is the second linear motor of the photomask stage. In this structure, in a state where the first linear motor is turned OFF, the photomask stage can be driven independently of the base member by driving the second linear motor, thereby enabling the position of the photomask stage to be adjusted. Reset and fine-tuning. In the exposure apparatus of the present invention, a third linear motor may be provided between the base member and the substrate platform substrate platform to drive the current substrate platform substrate platform. In this structure, when the first linear motor (and the second linear motor) is turned off, the substrate platform can be driven independently of the base member by driving the third linear motor, so that the substrate can be moved to the substrate. The position of the platform substrate platform is reset and finely adjusted. In the exposure apparatus of the present invention, at least one of the second linear motor and the third linear motor may be provided with a regenerative braking control circuit that finely adjusts a speed ratio during synchronous movement of the two platforms by the first linear motor. In this structure, by performing regenerative braking on at least one of the second linear motor and the third linear motor due to the regenerative braking control circuit, the photomask stage and the substrate stage substrate of the first linear motor can be moved in the opposite directions to each other. The appearance quality of at least one of the platforms increases, and the speed ratio during the movement of the two platforms can be fine-tuned. Here, the regenerative braking refers to a braking effect by causing a motor to act as a type of generator, thereby increasing the load driven by the first linear motor (that is, making the mask stage and the substrate stage). The appearance quality of at least one of the substrate stages is increased). The exposure device having such a structure can adjust the speed ratio of the two platforms to ensure the desired synchronization performance when the mass ratio of the two platforms is not correctly set to the desired value. In addition, the two platforms can also be intentionally used. Quality 9 ----— — — — ——— ---- IIII ^. -------- ί ^ (Please read the precautions on the back before filling out this page) This paper size applies to China solid Home Standard (CNS) A4 Specification (210 X 297 mm) '4 344 1 A7 B7 V. Description of the Invention () (Please read the precautions on the back before filling this page) It is slightly different than the desired 値, by When moving (scanning), adjust the amount of regenerative braking to make the speed ratio of the two platforms consistent with the reciprocal of the reduction ratio of the projection optical system. This can ensure stable synchronization performance even in cases where momentum cannot be completely saved. . In the exposure apparatus of the present invention, the substrate stage may include a first stage that is driven to move in a first direction synchronized with the photosensitive substrate, and a movement that holds the photosensitive substrate and is integrated with the first stage toward the first stage. A second platform that is guided in the first direction and guided by the first platform and is movable in a second direction that is perpendicular to the first direction. With such an exposure device, scanning exposure can be performed by repeatedly moving the second stage holding the substrate and the first stage integrally toward the first direction, and then moving the second stage relative to the first stage toward the first stage. The second direction perpendicular to the one direction makes it easy to realize the so-called step-and-scan exposure. A second aspect of the present invention is to provide a scanning system including a projection optical system having a mask and a substrate having a substantially perpendicular optical axis, and the pattern of the mask is copied to the photosensitive substrate via the projection optical system. The exposure device includes a base, a first platform printed by the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, which moves the photomask on the base, and a second platform, which moves the substrate on the base, And, in order to move the photomask and the substrate synchronously at a speed ratio corresponding to the magnification of the projection optical system, the driving system is connected to the first platform and the second platform; 1 platform and the aforementioned 2nd platform along 10 paper standards are applicable to the Chinese National Standard (CNS) A4 specification (published) " Consumption Cooperation by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 34-4 1 6 A7 B7 V. Invention Explanation () The specific direction is driven in the reverse direction and the reaction forces generated by the aforementioned synchronous movement approximately cancel each other out. Β The third aspect of the present invention is to provide: Scanning exposure method for copying a pattern of a photomask to a substrate using a shadow optical system: The photomask and the substrate are arranged in the same plane perpendicular to the optical axis of the projection optical system, and a portion of the pattern of the photomask is arranged. An inverted image is projected onto the substrate ', causing the photomask and the substrate to move synchronously in a reverse direction along a specific direction on the plane, thereby counteracting the reaction forces generated by the synchronous movement. A fourth aspect of the present invention is to provide: an exposure method, which exposes a substrate placed on a substrate platform with a pattern of a mask placed on a mask platform; The platform of one party moves in a predetermined direction: To reduce the force associated with moving the platform of one party, it is synchronized with the movement of the platform of the other party so that the platform of the other party moves in a direction opposite to the predetermined direction. A fifth aspect of the present invention is to provide: an exposure method for exposing a substrate placed on a substrate platform with a pattern of a photomask placed on a photomask platform: wherein, a light provided on the substrate is driven The driving member between the hood platform and the aforementioned substrate platform enables one platform to move in a predetermined direction, while the other platform moves in synchronization with the movement of one platform to the predetermined platform. National Standard (CNS) A4 Specification (2WX297 Public Love) '------ (Please read the precautions on the back before filling in this page) — 1 ----- 1Τ · — ———- — I *' " Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 344 1 6a? B7 5. Explanation of the invention (?) In the opposite direction. A sixth aspect of the present invention is to provide: an exposure method that exposes a substrate with a pattern formed on a photomask; including: moving the photomask on a predetermined surface; and moving the substrate relative to the predetermined surface Is a substantially vertical plane. A seventh aspect of the present invention is to provide an exposure method for exposing a pattern formed on a mask on a substrate by projecting a projection optical system with a predetermined projection magnification on the substrate; wherein, the method includes: The mask disposed on one side of the aforementioned projection optical system moves in a predetermined direction; so that the substrate disposed on the same side as the aforementioned projection optical system is moved in synchronization with the movement of the mask The given direction is the opposite direction. An eighth aspect of the present invention is to provide: an exposure method for exposing a substrate in a pattern formed on a photomask; wherein, the method includes: making the photomask move on a predetermined surface; and making the substrate move between and The predetermined surfaces are substantially the same surface. A ninth aspect of the present invention is to provide: a method for manufacturing an exposure device, which exposes a substrate in a pattern of a photomask; wherein, the method includes: setting a photomask platform; setting a substrate platform; One of the substrate and the substrate platform moves in a predetermined direction and reduces the force generated by the movement of the one of the platform. This paper size applies the Chinese National Standard (CNS) A4 specification (210 x 297 mm) C Please read first Note on the back, please fill out this page again} Pack ------ Order --------- # Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 344 1 6 A7 B7 V. Description of the Invention (0) A driving system is provided so that when the platform of the other party moves synchronously with the platform of the other party, it will move in a direction opposite to the predetermined direction. The tenth aspect of the present invention is to provide: a method for manufacturing an exposure device, which exposes a substrate in a pattern of a photomask; wherein, the method includes: setting a photomask platform; setting a substrate platform; A driving member is arranged therebetween so that one of the mask platform and the substrate platform moves in a predetermined direction, and the other platform moves in a direction opposite to the predetermined direction when it moves synchronously with the one platform. The eleventh aspect of the present invention is to provide: a method for manufacturing an exposure device, which exposes a substrate with a pattern formed on a photomask; wherein, the method includes: setting a photomask platform so that the photomask moves on a predetermined surface Upper; setting a substrate platform so that the substrate moves on a surface that is substantially perpendicular to the predetermined surface. The twelfth aspect of the present invention is to provide a method for manufacturing an exposure device, which is to cause a pattern of a photomask to be projected on a substrate to expose the substrate: wherein the method includes: setting an optical system with a predetermined projection magnification; On one side opposite to the aforementioned projection optical system, a reticle platform for placing the photomask is provided; and on the ~ side of the aforementioned projection optical system where the reticle platform is provided, one for placing the substrate is provided Substrate platform. 13 This paper size applies to China National Standard (CNS) A4 (210 χ 297 mm) (Please read the precautions on the back before filling out this page). --- I ---- 1τ --- I --- -4 344 1 6'3 A7 __ B7 V. Description of the invention (Μ)

c靖先閱讀背面之注意事項再填寫本頁J 本發明的第13型態係在於提供：一種曝光裝置之製造 方法，係以形成於光罩上之圖案對基板進行曝光；其中， 係包含： 設置一光罩平台使得前述光罩於既定面上移動； 設置一基板平台使得前述基板移動於與前述既定面爲 大致同一面上。 本發明的第14型態係在於提供：一種曝光裝置，係以 光罩之圖案對基板進行曝光，其中，係包含： 一光罩平台，其載置於光罩上； 一基板平台，其載置於基板上； 一驅動系統，其使得前述光罩平台與基板平台其中一 方移動於既定之方向上，爲減低伴隨該其中一方之平台的 移動所產生的力，乃使得另一方的平台於與該一方之平台 同步移動時移動於與該既定方向爲相反的方向上。 本發明的第15型態係在於提供：一種曝光裝置，係以 光罩之圖案對基板進行曝光；其中，係包含： 一光罩平台，其載置於光罩上； 一基板平台，其載置於基板上； 經濟部智慧財產局員工消費合作社印製 一驅動構件，其配置於前述光罩平台與前述基板平台 之間’係使得一方之平台移動於既定方向上，並使得另一 方之平台與一方之平台移動同步般移動於與該既定方向爲 相反方向上。 本發明的第16型態係在於提供：一種曝光裝置，係以 形成於光罩上之圖案對基板進行曝光；其中，係包含： 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 4 344163 A7 __. ....___B7__ 五、發明說明（θ ) 一光罩平台，係使得前述光罩移動於既定面上； <請先閱讀背面之注*項再填寫本頁) 一基板平台’係使得前述基板移動於相對前述既定面 爲大致垂直的面上。 本發明的第17型態係在於提供：一種曝光裝置，係以 光罩之圖案對基板進行曝光；其中，係包含： 一投影光學系統，其具有既定之投影倍率： 一光罩平台’其用以載置前述光罩，係配置在相對於 前述投影光學系統之一側； 一基板平台’其用以載置前述基板，係配置在相對於 前述投影光學系統之配置有前述光罩平台之前述一側。 本發明的第18型態係在於提供：一種曝光裝置，係以 形成於光罩上之圖案對基板進行曝光；其中，係包含： 一光罩平台，係使得前述光罩移動於既定面上； 一基板平台，係使得前述基板移動於與前述既定面爲 大致同一面上。 又，依據本發明 > 尙可提供使用有前述本發明種種型 態的微元件及其製造方法。 [附圖說明] 經濟部智慧財產局員工消費合作社印製 第1圖係顯示本發明的構成原理的圖。 第2圖係顯示第丨實施例的曝光裝置的槪略構成圖。 第3圖係圖1的裝置的槪略平面圖。 第4圖係圖1的裝置的控制系統的構成的區塊(block) 圖。 第5圖係顯示第2實施例的裝置的控制系統的構成的 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐) — 4 344 1 6 > A7 五、發明說明（I》） 區塊圖。 第6A圖係本發明的曝光裝置的變形例的槪略正面圖 〇 第6B圖係圖6A所示的曝光裝置的變形例的右側面圖 ' 〇 [發明之最佳實施形態] 以下，依據圖1來說明本發明的曝光裝置的構成原理 。圖1顯示本發明的曝光裝置10的構成原理。此曝光裝置 10具有：做爲基座構件的防震台12、及' 經由空氣軸承 (air bearing)13而浮動支撐於此防震台12上的基板平台14 、及、浮動支撐於此基板平台14的光罩平台16。而且， 在基板平台14及光罩平台16之間設置線性馬達18。即是 ，譬如說，在質量Mr的光罩平台16側設置線性馬達18 的驅動線圈(eoil)l8A，在質量Mw的基板平台14側設置線 性馬達18的驅動磁性軌道(magnetic track) 18B。再者，光 罩平台16的質量Mr與基板平台Μ的質量Mw的比係設 定爲圖所未示的投影光學系統的縮水倍率。 在此種構成的本發明的曝光裝置10中，由於兩平台 14、16係被浮動支撐’所以在線性馬達18啓動時僅產生 內力，使大小相同方向相反的作用力F1及反作用力 F2(F2=-F1)會分別作用於各平台16、14。若使由此力產生 的兩平台16、I4的移動速度爲Vr、Vw並忽略空氣阻抗等 ，則由動量守恆原理：c Jing first read the notes on the back before filling in this page. J The thirteenth aspect of the present invention is to provide: a method for manufacturing an exposure device, which exposes a substrate with a pattern formed on a photomask; wherein, it includes: A photomask platform is provided to make the photomask move on a predetermined surface; a substrate platform is set to make the substrate move on the same plane as the predetermined surface. The fourteenth aspect of the present invention is to provide: an exposure device for exposing a substrate in a pattern of a photomask, wherein the exposure device includes: a photomask platform mounted on the photomask; a substrate platform configured to carry Placed on the substrate; a drive system that moves one of the photomask platform and the substrate platform in a predetermined direction, in order to reduce the force generated by the movement of one of the platforms, the other platform When the platform on one side moves synchronously, it moves in a direction opposite to the predetermined direction. A fifteenth aspect of the present invention is to provide: an exposure device that exposes a substrate in a pattern of a photomask; wherein, the system includes: a photomask platform mounted on the photomask; and a substrate platform mounted on the photomask Placed on the substrate; the consumer co-operative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints a driving member, which is arranged between the aforementioned photomask platform and the aforementioned substrate platform, so that one platform moves in a predetermined direction and the other platform Move in synchronization with the movement of one platform in a direction opposite to the predetermined direction. A sixteenth aspect of the present invention is to provide an exposure device for exposing a substrate in a pattern formed on a photomask, wherein the exposure device includes: 14 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 4 344163 A7 __. ....___ B7__ 5. Description of the Invention (θ) A photomask platform is used to move the aforementioned photomask onto a predetermined surface; < Please read the note * on the back before filling in this (Page) A substrate stage 'is such that the substrate is moved on a surface that is substantially perpendicular to the predetermined surface. A seventeenth aspect of the present invention is to provide: an exposure device that exposes a substrate in a pattern of a photomask; wherein, the system includes: a projection optical system having a predetermined projection magnification: a photomask platform 'its use The substrate is placed on one side opposite to the projection optical system. A substrate platform is used to place the substrate. The substrate is placed on the substrate opposite to the projection optical system. One side. An eighteenth aspect of the present invention is to provide: an exposure device for exposing a substrate in a pattern formed on a photomask; wherein, it includes: a photomask platform for moving the aforementioned photomask on a predetermined surface; A substrate stage is such that the substrate moves on a substantially same surface as the predetermined surface. In addition, according to the present invention > 尙, it is possible to provide a micro-device using the various types of the present invention and a method for manufacturing the same. [Brief description of the drawings] Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy FIG. 1 is a diagram showing the constitution principle of the present invention. FIG. 2 is a schematic configuration diagram showing the exposure apparatus of the first embodiment. FIG. 3 is a schematic plan view of the device of FIG. 1. FIG. FIG. 4 is a block diagram showing a configuration of a control system of the apparatus of FIG. 1. Fig. 5 shows the structure of the control system of the device of the second embodiment. 15 paper sizes are applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) — 4 344 1 6 > A7. 5. Description of the invention ( I》) block diagram. FIG. 6A is a schematic front view of a modification example of the exposure apparatus of the present invention. FIG. 6B is a right side view of a modification example of the exposure apparatus shown in FIG. 6A. 1 to explain the configuration principle of the exposure apparatus of the present invention. FIG. 1 shows a configuration principle of an exposure apparatus 10 according to the present invention. The exposure device 10 includes a shockproof table 12 as a base member, and a substrate platform 14 floatingly supported on the shockproof table 12 via an air bearing 13, and a substrate platform 14 floatingly supported on the substrate platform 14. Photomask platform 16. A linear motor 18 is provided between the substrate stage 14 and the mask stage 16. That is, for example, a drive coil 18A of the linear motor 18 is provided on the mask stage 16 side of the mass Mr, and a drive magnetic track 18B of the linear motor 18 is provided on the substrate stage 14 side of the mass Mw. In addition, the ratio of the mass Mr of the mask stage 16 to the mass Mw of the substrate stage M is set to a shrinking magnification of a projection optical system (not shown). In the exposure apparatus 10 of the present invention having such a structure, since the two platforms 14 and 16 are floatingly supported, only the internal force is generated when the linear motor 18 is started, so that the acting force F1 and the opposing force F2 (F2 in the same direction and opposite directions) are generated. = -F1) will act on each platform 16,14. If the moving speeds of the two platforms 16, I4 generated by this force are Vr, Vw and the air impedance is ignored, then the principle of conservation of momentum is used:

Mr*Vr=Mw*Vw 16 本紙張尺度適用中國國家標华（CNS)A4規格⑵0 X 297公爱) ί請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------ί& 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 4 344 16 : A7 B7 五、發明說明（d) 因此' 兩平台16、14的速度比爲：Mr * Vr = Mw * Vw 16 This paper size is applicable to China National Standards (CNS) A4 specifications (0 X 297 public love) ί Please read the precautions on the back before filling this page) --------- ί & Printed by the Employees 'Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 344 16: A7 B7 V. Invention Description (d) Therefore' Two platforms 16, The speed ratio of 14 is:

Vr/Vw=Mw/Mr 因此，在本發明的場合，因爲係將兩平台16、14 @ 質量比Mr/Mw設定爲前述圖所未示的投影光學系統的縮小 倍率Mpl，所以 V r/V w=Mw/Mr= 1 /Mp 1 而使兩平台16、14的速度比與投影光學系統的縮小 倍率的倒數一致。因此，理想上，在構成了保存動量的場 合，只要以自動控制來控制基板平台14及光罩平台16之 一的速度(或位置），便能夠確實的一直對兩平台14、16進 行同步掃描(移動）。 譬如說，在以自動控制來控制光罩平台16的場合，良p 使是光罩平台16做震動性的移動，基板平台μ也會以與 質量比的倒數相同的速度比做與光罩平台Ιό類似的震動性 的移動。再者，因爲動量已守恆使系統的重心—直是固定 的’所以防震台I2不會搖晃。因此，兩平台16、M(分別 保持於兩平台16、Μ的光罩及基板)在掃描時的同步誤差 會一直是零。 ° [實施例] [第1實施例] 以下’依照圖2到圖4來說明本發明的第丨實施例。 圖2到圖3係顯示第丨實施例的步進掃描方式的曝光裝置 100的主要部份的構成。 此曝光裝置100具有：水平的保持於圖所未示的防震 本紙泰尺度適用中國囤家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注专孝項再填寫本頁) --------1τ·----------i& 經濟部智慧財產局員工消費合作社印製 4 344 1 6 : A7 _____B7____ 五、發明說明（ί.Γ ) 墊片(pad)上並做爲基座構件的基座構造體200、及、浮動 支撐於此基座構造體200上並做爲基板平台的晶圓台Μ及 做爲光罩平台的標線台體206、及、在晶圓台14的上方固 定於保持於圖所未示的圓柱的基座構造體200的投影光學 系統PL '及、同樣的固定於保持於圖所未示的圓柱的基座 構造體200的照明光學系統212。此處，前述晶圓台14係 由做爲可在X方向(掃描方向)移動的第1平台的第1晶圓 台體208、及、做爲可由此第1晶圓台體208所引導而可 在與X方向垂直的Y方向移動的第2平台的第2晶圓台體 220。再者，關於其具體的構成在後面會詳細敘述。 在基座構造體200的上面在圖2的Υ方向的一端(左 端)部側，在與Υ方向垂直的X方向(垂直於紙面的方向)突 設了互相平行延伸的兩條角柱狀的固定引導軌道（guide r*ail)202、204 >在基座構造體2〇0的上面的其他部份則爲 了在Z方向支持各移動體(平台類)並使其在XY平面內平 滑的移動而將其磨平。在固定引導軌道202形成將可在X 方向移動的標線台體206規制於Z方向的引導面202A及 規制於Y方向的引導面202B ;在固定引導軌道204則形 成將可在X方向移動的第1晶圓台體208規制於Y方向的 引導面204A。 以標線台體206而言，如圖2所示的，係使用將做爲 光罩的標線R垂直的保持的縱型者；在此標線台體206設 置垂直的保持標線R並使其在與投影光學系統PL的光軸 AX垂直的面(圖中的XZ面）內進行並進微動及旋轉微動的 18 本紙張尺度適用中國國家標準<CNS)A4規格（210 X 297公釐） — III---- ---- — I-----^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4344 I 6 A7 B7 五、發明說明（Μ ) 標線微動台210。 前述照明光學系統212，對標線R而言係配置於與投 影光學系統PL相反側，並對標線R的矩形的圖案區域以 在與掃描曝光時的掃描方向（X方向）垂直的方向以延伸爲 縫隙狀（或是矩形狀）的強度分布的照明光照射。以此直線 的縫隙狀照明光所照射的標線R的圖案部份係位置於與投 影光學系統PL的光軸AX垂直的物體面側的圓形視野的中 央，並通過由做爲透過光學元件的第1透鏡群G1、第2透 鏡群G2、第3透鏡群G3、做爲分束器的分束器BS、及、 做爲反射光學元件的凹面鏡MR所構成的特定縮小倍率 Mpl(本實施例中爲1/4)的投影光學系統。譬如說，以 0.35μηι以下的解析度投影至晶圓上。此處，此投影光學系 統係使用將形成於標線R的圖案面的圖所未示的電路圖案 的倒立像(在X軸上倒立)投影至晶圓上者。再者，因爲此 種投影光學系統PL的詳細的構成已詳細的開示於前面所 說的特開平5-88087號公報或是特開平6-300973號公報等 ，此處省去更進一步的說明。 在前述標線台體206的底部固定了：對向於固定引導 軌道202引導面202Α並支撐標線台體206的重量的空氣 軸承用的墊片PDA、對向於固定引導軌道202引導面 202B並限制標線台體206在Y方向變位的空氣軸承用的 墊片PDB、及、對向於固定引導軌道202及204間的基座 構造體200的表面200A並支撐標線台體206的重量的空 氣軸承用的墊片PDC。在這些墊片之中，限制Y方向變位 19 本紙張尺度適用令國國家標準（CNS)A4規格（2]〇x297公釐） (請先閱讀背面之注意事項再填寫本頁) --------tT'· —------*" 4344 16^ 五、發明說明（I?) 的墊片PDB係由組合噴出加壓空氣的複數的空氣墊片部及 與其交互的配置於X方向（垂直於紙面的方向）並吸引空氣 的複數的真空墊片部的空壓/真空組合型墊片（真空預壓型 空氣軸承）。此空壓/真空組合型墊片係藉由真空墊片部的 吸引力（預壓力）及來自於空氣墊片部的噴出空氣的壓力的 平衡而隔著特定的間隙(clearance)使標線台體206浮動支 撐於引導面。再者，在墊片PDA、墊片PDC的場合，標線 台體2〇6的重量會作用爲預壓力，並藉由此重量與來自於 墊片PDA、墊片PDC的噴出空氣的平衡而隔著特定的間隙 使標線台體2〇6浮動支撐於引導面。在以下的說明中，墊 片支撐重量即是指此事。 在固定引導軌道204的Y方向的另一端側部份的基座 構造體2〇〇的上面則浮動支撐了由第1晶圓台體208及第 2晶圓台體220所構成的前述基板平台14。 第1晶圓台體20S，在基座構造體200上，係形成於 擴展於XY平面的矩形框架(frame)上(參照圖3);其重量則 由配置於與基座構造體200的上面對向的4個角落的空氣 軸承用的墊片PDD、PDE所支撐。而且，第1晶圓台體 208在Y方向(紙面內的左右方向）的變位係由對向於固定 引導軌道2〇4的垂直的引導面2〇4A並固定於第1晶圓台 體208的空壓/真空組合型墊片PDF所限制。由此，第1 晶圓台體208便能夠由引導面204A及基座構造體200的 表面所引導而可無摩擦的在X方向移動。 而且，在此第1晶圓台體208及標線台體206之間設 20 本紙張尺度適用中國國家標準（CNS)A4規格（2]0 X 297公釐） ί請先閱讀背面之注意事項再填寫本頁> — ---- 訂---------^ 經濟部智慧財產局員工消費合作社印：¾ 4344 1 6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（li ) 置沿著X方向配置的第1線性馬達216。此第1線性馬達 216係由：固定於第1晶圓台體208側且延伸於X方向一 次移動範圍內的磁石軌道(magnet track)部216A(此磁石軌 道部216A係由延伸於X軸方向的斷面3字狀的軛(yoke)及 固定於此軛的上下面的一對磁石所構成）、及、固定於標線 台體2〇6側的驅動線圈部216B所構成；並在X方向產生 推力。即是，在本第1實施例中，藉由驅動線性馬達216 而，譬如說，若是將標線台體206與驅動線圈部216B — 體的驅動向紙面前方側，則由於其反作用力而會使晶圓台 14與磁石軌道部216A —體的被驅動向紙面後方側。 再者，前述標線台體206也能夠由延著X方向設置的 第2線性馬達214的驅動而單獨的在X方向移動。此線性 馬達214係由：固定於基座構造體200側且延伸於標線台 體2〇6的X方向一次移動範圍內的磁石軌道部214A(此磁 石軌道部214A係由固定於引導面200A上的斷面U字狀的 軛及固定於此軛的左右內面的一對磁石所構成）、及、固定 於標線台體206側的驅動線圈部214B所構成；並在X方 向產生推力。此第2線性馬達214除了在使標線台體206 回到重置位置時使用之外，也具有各種功能，對於此點將 會在其後敘述。 而且，在前述第1晶圓台體208的框架的內側，如圖 2及圖3所示的，保持了真搭載空吸著晶圓W的晶圓支撐 體(holder)18及基準標誌板FM的第2晶圓台體220，並使 其可在Y方向移動。再者，圖3係顯示在XY平面上所看 21 n n If · 11 1 ( n n I — (請先M讀背面之注意事項再填寫本頁) 尺度適用中ΐ國家標準<CNS)A4規格（210 X 297公楚1 4 344 1 6、， a? _____B7 五、發明說明（I?) (請先閱讀背面之注意事項再填寫本頁) 到的晶圓台體的構成。在此第2晶圓台體220的下部則裝 設了 ：如圖2所示的對向於基座構造體200的上面並用以 支撐其重量的空氣軸承用的墊片PDI、PDG。 再者，在中間有第2晶圓台體220的延著Y方向延伸 的第1晶圓台體208的2條直線框架部之一的內側面形成 了如圖3所示的第2晶圓台體220及用以在Y方向引導(X 方向變位受限制)的引導面222 ;並在第2晶圓台體22〇的 一方的端部固定了對向於引導面222的一對空壓/真空組合 型墊片PDH。 而且，在第1晶圓台體208延伸向Y方向的2條框架 部與第2晶圓台體220之間，如圖3所示的，分別設置了 使第2晶圓台體220相對於第1晶圓台體208移動向Y方 向的一對線性馬達240、242 ^因爲此一對線性馬達24〇、 242的各驅動線圈部240A、242A係固定於第2晶圓台體 220的兩側，所以藉由微妙的改變各線性馬達240、242的 驅動量便能夠使第2晶圓台體220在基座構造體200的表 面上做微小旋轉(秒單位）。 經濟部智慧財產局員工消費合作社印製 此處，參照圖3而更進一步的說明標線R與第1、第 2晶圓台體208、220在XY平面上的倒數値構成。在圖3 中，在XY平面內的標線R在X方向(掃描方向)的移動位 置及標線R在XZ平面內的微小旋轉量(偏航(yawing)誤差) 係：將測長用的雷射光束投射至固定於設置於標線台體 2〇6的微動台210的一部份的反射鏡CMx，並逐次計測接 受其反射光束的雷射干涉計RIFx、R1F0。再者，雖然圖2 22 本紙張尺度適用中國國家標準（CNS>A4規格（210 X 297公釐） 434416理 五、發明說明（y) 、圖3均未顯示，但是也設置了逐次計測標線微動台210 在Z方向（在圖2中爲紙面內的上下方向，在圖3中爲與紙 面垂直的方向）的位置的雷射干涉計RIFy。此處，此雷射 干涉計RIFy雖然是計測標線微動台210在Z方向位置， 但是若是考慮到晶圓台座標系統則因爲此Z方向位置係對 應於Y方向位置，所以才使用RIFy做爲此雷射干涉計的 圖號。因此，在以下的說明中，此雷射干涉計RIFy的計測 値以PY表示。 再者，在晶圓W在XY平面內的座標位置係：在第2 晶圓台體220上的另一端(右端)將測長用的雷射光束投射 至延設於X軸方向的移動鏡子My，並逐次計測接受其反 射光束的雷射干涉計WIFy、及、在第2晶圓台體220上的 X方向的一端將測長用的雷射光束投射至延設於Y軸方向 的移動鏡子Mx，並逐次計測接受其反射光束的雷射干涉 計WIFx。各干涉計WIFx、WIFy均同時也逐次計測第2晶 圓台體220的微小旋轉量(偏航誤差）。再者，移動鏡子、 干涉計在圖2中均省略。 以上的各干涉計RIFx、RIF0、RIFy、WIFx、WIFy均 是以基座構造體200爲基準而計測標線R及晶圓W的座標 位置’且做爲基準的平面鏡及角型菱鏡(corner prism)(圖均 未示)均是相對於基座構造體200係爲固定。 雖然在圖3的晶圓W中顯不了一個鏡頭區域SA，但 是在圖3的狀態係爲鏡頭區域SA的中心點正好與投影光 學系統PL的垂直的光軸AX(圖2的透鏡群G3的光軸)合 23 >紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先W讀背面之注意事項再填寫本頁)Vr / Vw = Mw / Mr Therefore, in the case of the present invention, since the two platforms 16, 14 @ mass ratio Mr / Mw are set to the reduction magnification Mpl of the projection optical system not shown in the figure, V r / V w = Mw / Mr = 1 / Mp 1 so that the speed ratio of the two platforms 16, 14 is consistent with the inverse of the reduction magnification of the projection optical system. Therefore, ideally, in the case where the stored momentum is configured, as long as the speed (or position) of one of the substrate stage 14 and the mask stage 16 is controlled by automatic control, the two platforms 14 and 16 can always be scanned synchronously. (mobile). For example, when the photomask stage 16 is controlled by automatic control, the good p causes the photomask stage 16 to vibrate, and the substrate stage μ will also be used as the photomask stage at the same speed ratio as the inverse of the mass ratio. Ιό Similar shaking motion. Moreover, because the momentum has been conserved, the center of gravity of the system is always fixed, so the shaker I2 will not shake. Therefore, the synchronization error of the two platforms 16, M (the mask and the substrate respectively maintained on the two platforms 16, M) will always be zero during scanning. [Embodiment] [First Embodiment] Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 2 to 4. Figs. 2 to 3 show the configuration of the main part of the exposure apparatus 100 of the step scanning method according to the first embodiment. The exposure device 100 has: a horizontally-kept shock-proof paper that is not shown in the figure, and the Chinese standard (CNS) A4 size (210 X 297 public love) is applied (please read the note on the back before filling out this page) ) -------- 1τ · ---------- i & Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 344 1 6: A7 _____B7____ V. Description of the Invention (ί.Γ) Pad A base structure 200 on a pad and used as a base member, and a wafer stage M floatingly supported on the base structure 200 and used as a substrate platform and a reticle stage used as a photomask platform The body 206 and the projection optical system PL ′ fixed to the base structure 200 held on a column not shown in the figure above the wafer stage 14 and similarly fixed to the base held on a column not shown in the figure. The illumination optical system 212 of the seat structure 200. Here, the wafer stage 14 is guided by the first wafer stage 208 which is a first stage movable in the X direction (scanning direction), and is guided by the first wafer stage 208. The second wafer stage 220 of the second stage movable in the Y direction perpendicular to the X direction. The specific configuration will be described in detail later. On the upper surface of the base structure 200, at the one end (left end) side of the Υ direction in FIG. 2, two corner pillar-shaped fixations extending parallel to each other are protruded in the X direction (direction perpendicular to the paper surface) perpendicular to the 突 direction. Guide rails (guide r * ail) 202, 204 > The other parts above the base structure 2000 are to support each moving body (platform) in the Z direction and make it move smoothly in the XY plane And smooth it. A guide surface 202A that regulates the Z direction and a guide surface 202B that regulates the Y direction are formed on the fixed guide track 202, and a guide surface 202B that is movable in the X direction is formed on the fixed guide track 202. The first wafer stage 208 is regulated on the guide surface 204A in the Y direction. As for the reticle stage 206, as shown in FIG. 2, a vertical type is used which holds the reticle R as a mask vertically; the reticle stage 206 is provided with a vertical holding reticle R and It is made to perform inching and rotating inching in a plane (XZ plane in the figure) perpendicular to the optical axis AX of the projection optical system PL. This paper size is in accordance with the Chinese National Standard < CNS) A4 specification (210 X 297 mm). ） — III ---- ---- — I ----- ^ (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4344 I 6 A7 B7 V. Invention Explanation (M) Marking micro-movement stage 210. The illumination optical system 212 is disposed on the side opposite to the projection optical system PL with respect to the graticule R, and extends the rectangular pattern area of the graticule R in a direction perpendicular to the scanning direction (X direction) during scanning exposure. Illumination light with a slit-like (or rectangular) intensity distribution. The pattern portion of the reticle R irradiated with the straight slit-shaped illumination light is positioned at the center of a circular field of view on the object surface side perpendicular to the optical axis AX of the projection optical system PL, and passes through the optical element. The specific reduction magnification Mpl formed by the first lens group G1, the second lens group G2, the third lens group G3, the beam splitter BS as a beam splitter, and the concave mirror MR as a reflective optical element (this implementation In the example, it is a 1/4) projection optical system. For example, it is projected onto a wafer with a resolution of 0.35 μηι or less. Here, the projection optical system uses a projected inverted image (inverted on the X axis) of a circuit pattern not shown in the figure formed on the pattern surface of the reticle R onto a wafer. Furthermore, since the detailed structure of such a projection optical system PL has been disclosed in detail in the aforementioned Japanese Patent Application Laid-Open No. 5-88087 or Japanese Patent Application Laid-Open No. 6-300973, further description is omitted here. At the bottom of the marking platform body 206 are fixed an air bearing pad PDA facing the fixed guide rail 202 guide surface 202A and supporting the weight of the marking platform 206, and a fixed guide rail 202 guide surface 202B. The air bearing gasket PDB that restricts the displacement of the marking base 206 in the Y direction and the surface 200A of the base structure 200 facing the fixed guide rails 202 and 204 are supported to support the marking base 206. Weight of air bearing gasket PDC. Among these gaskets, the displacement in the Y direction is restricted. 19 This paper is applicable to the national standard (CNS) A4 specification (2) 0x297 mm. (Please read the precautions on the back before filling this page) --- ----- tT '· —------ * " 4344 16 ^ V. Description of the invention (I?) Gasket PDB is a combination of a plurality of air gasket parts that spray pressurized air and interact with it. The air / vacuum combination type gasket (vacuum preload type air bearing) of a plurality of vacuum gasket parts arranged in the X direction (direction perpendicular to the paper surface) and attracting air. This air-pressure / vacuum combined type gasket uses a balance between the attractive force (pre-pressure) of the vacuum gasket portion and the pressure of the ejected air from the air gasket portion, so that the marking stage is separated by a specific clearance. The body 206 is floatingly supported on the guide surface. Furthermore, in the case of gaskets PDA and gaskets PDC, the weight of the reticle stage 206 acts as a preload, and the weight is balanced with the ejected air from the gaskets PDA and gaskets PDC. The marking platform body 20 is floatingly supported on the guide surface through a specific gap. In the following description, this refers to the support weight of the pad. Above the base structure 2000 on the other end portion of the fixed guide rail 204 in the Y direction, the substrate platform composed of the first wafer stage 208 and the second wafer stage 220 is floatingly supported. 14. The first wafer stage 20S is formed on the pedestal structure 200 on a rectangular frame (see FIG. 3) extending in the XY plane; its weight is arranged on the pedestal structure 200. The air bearing pads PDD and PDE at the four corners facing each other are supported. In addition, the displacement of the first wafer stage 208 in the Y direction (left-right direction in the paper surface) is fixed to the first wafer stage by a vertical guide surface 204A facing the fixed guide rail 204. 208 air / vacuum combined gasket PDF limited. Accordingly, the first wafer stage 208 can be guided by the guide surface 204A and the surface of the susceptor structure 200 and can move in the X direction without friction. In addition, there are 20 paper sizes between the first wafer table 208 and the reticle table 206, which are in accordance with China National Standard (CNS) A4 (2) 0 X 297 mm. Ί Please read the precautions on the back first Fill out this page again — — ---- Order --------- ^ Printed by the Consumers 'Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs: ¾ 4344 1 6 A7 B7 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs DESCRIPTION OF THE INVENTION (li) A first linear motor 216 is disposed along the X direction. The first linear motor 216 is composed of a magnet track portion 216A fixed to the first wafer stage 208 side and extending within a single movement range in the X direction (the magnet track portion 216A is formed by extending in the X axis direction It consists of a 3-shaped yoke and a pair of magnets fixed to the upper and lower sides of the yoke), and a drive coil portion 216B fixed to the reticle body 206 side. The direction produces thrust. That is, in the first embodiment, by driving the linear motor 216, for example, if the driving of the marking line body 206 and the driving coil portion 216B toward the front side of the paper surface is caused by the reaction force, The wafer stage 14 and the magnet rail portion 216A are driven to be driven toward the rear side of the paper surface. The reticle stage 206 can be moved in the X direction alone by being driven by a second linear motor 214 provided along the X direction. This linear motor 214 is composed of: a magnet track portion 214A fixed to the base structure 200 side and extending within a range of one movement in the X direction of the reticle table body 206 (this magnet track portion 214A is fixed to the guide surface 200A It consists of a U-shaped cross-section yoke and a pair of magnets fixed to the left and right inner surfaces of the yoke), and a drive coil portion 214B fixed to the reticle body 206 side; and generates thrust in the X direction . This second linear motor 214 has various functions in addition to being used when returning the marking base 206 to the reset position, and this point will be described later. In addition, as shown in FIG. 2 and FIG. 3, the inside of the frame of the first wafer stage 208 holds a wafer holder 18 and a reference mark plate FM, in which the vacuum wafer W is actually mounted. The second wafer stage 220 can be moved in the Y direction. In addition, Figure 3 shows 21 nn If · 11 1 (nn I — (please read the precautions on the back before filling out this page) on the XY plane. The standard is applicable to the China National Standard < CNS) A4 specification ( 210 X 297 Gong Chu 1 4 344 1 6 、, a? _____B7 V. Description of the invention (I?) (Please read the precautions on the back before filling this page) The structure of the wafer table body. Here the second crystal The lower part of the circular table body 220 is provided with air bearing pads PDI and PDG facing the upper surface of the base structure 200 as shown in Fig. 2 to support its weight. A second wafer stage 220 shown in FIG. 3 is formed on the inner side surface of one of the two linear frame portions of the first wafer stage 208 extending in the Y direction of the two wafer stage 220, and the second wafer stage 220 shown in FIG. A guide surface 222 for Y-direction guidance (the X-direction displacement is restricted); and a pair of air / vacuum combination type gaskets facing the guide surface 222 are fixed to one end of the second wafer stage 22o. PDH. Further, as shown in FIG. 3, between the two frame portions of the first wafer stage 208 extending in the Y direction and the second wafer stage 220, a second wafer stage 220 is provided. The pair of linear motors 240 and 242 that move the first wafer stage 208 in the Y direction is because the drive coil portions 240A and 242A of the pair of linear motors 24 and 242 are fixed to the second wafer stage 220. Both sides, so that the second wafer stage 220 can be rotated slightly (in seconds) on the surface of the base structure 200 by subtly changing the driving amounts of the linear motors 240 and 242. Intellectual Property Bureau, Ministry of Economic Affairs Printed here by the employee consumer cooperative, and referring to FIG. 3, the reciprocal structure of the reticle R and the first and second wafer stages 208, 220 on the XY plane will be further explained. In FIG. 3, in the XY plane The moving position of the graticule R in the X direction (scanning direction) and the slight rotation amount (yawing error) of the graticule R in the XZ plane: Projection of the laser beam for length measurement is fixed to the A part of the mirror CMx of the micro-movement stage 210 of the reticle stage 206, and successively measures the laser interferometers RIFx and R1F0 that receive the reflected beams. Furthermore, although Figure 2 22 this paper scale applies Chinese national standards (CNS > A4 specification (210 X 297 mm) 434,416 fifth, invention description (y), 3 are not shown, but the laser interferometer RIFy at the position of the measuring line micro-motion stage 210 in the Z direction (the vertical direction in the paper surface in FIG. 2 and the direction perpendicular to the paper surface in FIG. 3) is also provided. Here, although the laser interferometer RIFy is used to measure the position of the micro-movement stage 210 in the Z direction, if the wafer stage coordinate system is considered, this Z-direction position corresponds to the Y-direction position. This is the drawing number of the laser interferometer. Therefore, in the following description, the measurement 値 of the laser interferometer RIFy is expressed as PY. The coordinate position of the wafer W in the XY plane is: the other end (right end) of the second wafer stage 220 projects a laser beam for length measurement to a moving mirror extending in the X-axis direction. My, and sequentially measures the laser interferometer WIFy receiving the reflected light beam, and the laser beam for length measurement is projected to the movement extending in the Y-axis direction at one end in the X direction on the second wafer stage 220 The mirror Mx measures the laser interferometer WIFx which receives the reflected beam one by one. Each of the interferometers WIFx and WIFy also successively measures the minute rotation amount (yaw error) of the second crystal table body 220 at the same time. In addition, both the moving mirror and the interferometer are omitted in FIG. 2. Each of the above interferometers RIFx, RIF0, RIFy, WIFx, and WIFy is a plane mirror and a corner diamond (corner) that measure the coordinate positions of the reticle R and the wafer W based on the base structure 200 as a reference Prisms (not shown) are fixed relative to the base structure 200. Although a lens area SA is not shown in the wafer W of FIG. 3, in the state of FIG. 3, the center point of the lens area SA is exactly perpendicular to the optical axis AX of the projection optical system PL (the lens group G3 of FIG. 2). (Optical axis) and 23 > Paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

I tt n I 經濟部智慧財產局員工消費合作社印製 3^4 1 6¾ ' __~_B7_____ 五、發明說明（ >丨） 致的瞬間，此時標線R的圖案區域的中心點也正好與水平 的光軸AX(圖2的透鏡群Gl、G2的光軸)合致。 (請先閱讀背面之注意事項再填寫本頁) 此外，在本實施例的曝光裝置100中設置了：從投影 光學系統PL及標線R之間，經由投影光學系統PL的投影 視野的周邊部而光電的檢測出形成於晶圓W上或基準標誌 板FM上的對準標誌的穿過透鏡(through the lens ; TTL)方 式的對準光學系統230、及、經由分束器BS及第3透鏡群 G3而檢測出晶圓W上或基準標誌FM上的對準標誌及經 由分束器BS及第2、1透鏡群G2、G1而檢測出標線R上 的對準標誌的半TTL(half TTL)方式的對準光學系統232。 經濟部智慧財產局員工消費合作社印製 在以上的構成中，係使標線台體206及標線微動台 210兩者質量的總和Mr、與' 晶圓台14，即是第1晶圓台 體208及第2晶圓台體220兩者質量的總和Mw的比設定 爲等於投影光學系統PL的縮小倍率Mpl。在本實施例的 場合，如前所述的，由於投影光學系統PL的縮小倍率 Mpl爲1/4，所以將質量比Mr/Mw也設定爲1/4。舉一具 體的例子，雖然與所使用的晶圓W的直徑有很大的關係， 但是可以是使晶圓台體的質量總和Mw約爲40~100Kg，並 使標線台體的質暈總和Mr約爲10〜25Kg。 圖4顯示此第1實施例的曝光裝置1〇〇的控制系統的 構成。此控制系統包含：對準控制系統259、平台主控制 系統260、驅動電路253、驅動系統254、主掃描驅動系統 25S及驅動電路256。此處，說明此控制系統的上述構成各 部的作用。 24 本紙張尺度適用中@國家標準（CNS)A4規格（210 X 297公釐） 43^4 16^( A7 __B7_____ 五、發明說明（θ) (請先閱讀背面之注意事項再填寫本頁) 前述的來自於TTL對準光學系統230的檢測資訊、及 、來自於半TTL對準光學系統232的檢測資訊會被輸入至 對準控制系統259，並在此處決定晶圓W、標線R、或是 基準標誌板FM上的對準標誌的座標位置及位置偏差。 平台主控制系統260係連接至圖所未示的操作 (operation)用的微型電腦(mini computer)，並連接至分別驅 動控制前述的各線性馬達214、216、240、242、標線微動 台210的驅動系統254 '主掃描驅動系統255及驅動電路 256、驅動電路253。 其中，驅動電路253係依據由標線側的干涉計RiFx、 RIF0、RIFy所計測的X方向、Y方向、旋轉(偏航)方向的 各位置資訊PX ' PY、ΡΘ及來自於平台主控制系統260的 指令資訊而對標線微動台210進行自動控制，以使標線R 在對準時及掃描曝光中做微小移動。 再者，驅動系統254係依據由標線側的干渉計RiFx 所計測的位置資訊PX(或是速度資訊Vx)及來自於平台主 控制系統260的指令資訊而對第2線性馬達214進行自動 控制。 經濟部智慧財產局員工消費合作社印製 再者，主掃描驅動系統255主要是在掃描曝光時動作 ，係持續的監視由標線側的干涉計RiFx所計測的速度資訊 Vx(或是位置資訊PX)及由晶圓側的千涉計WIFx所計測的 速度資訊Vx(或是位置資訊PX)之一或是對兩者均持續的 監視，並對第1線性馬達2丨6進行自動控制以使標線台體 206及第1晶圓台體208中的至少一方的絕對速度係與來 25 本紙張尺度適用中國國家標準（CNS>A4規格（210^ 297公釐） 43Λ4 \ 6* , a? ______ B7 五、發明說明（β) 自於平台主控制系統260的指令資訊相等。 驅動電路256係依據由晶圓側的干涉計WIFx、WIFy 所計測的位置資訊PX、PY、ΡΘ及來自於平台主控制系統 260的指令資訊而對前述的一對線性馬達240、242進行自 動控制。 其次，說明如上所述的第1實施例的曝光裝置100在 掃描曝光時的動作。此處，係已經完成了半TTL對準光學 系統232的標線對準、及、TTL對準光學系統230的標線 、及、晶圓W的整體(global)對準、及 '使用基準標誌板 FM的基座線(base line)計測戰等的事前準備。 首先’在平台主控制系統260中，在投影光學系統PL 的曝光濾光片（filter)內決定晶圓W上的特定鏡頭區域在X 軸方向的一端部的位置，供應指令至驅動系統254及驅動 電路256，並驅動線性馬達216及線性馬達240、242。由 此’第2晶圓台體220會與第1晶圓台體208 —體的X移 動向與標線台體206相反的方向，而且，會對第1晶圓台 體208驅動向Y方向，在該鏡頭區域的X軸方向使一端部 在投影光學系統PL的曝光濾光片內決定其位置。其次， 在平台主控制系統260中，經由驅動系統254而驅動第2 線性馬達2H使標線台體206回到特定的重置位置。由此 ，使標線在X軸方向的另一端部與在投影光學系統PL的 曝光濾光片一致。再者，在此場合，在不使標線台體206 改變其X方向位置的情況下，依據標線用干涉計250的計 測値在對第2線性馬達214進行自動控制的狀態，驅動第 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)I tt n I Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 ^ 4 1 6¾ '__ ~ _B7 _____ V. Description of the invention (> 丨) At this moment, the center point of the pattern area of the marking line R is also exactly the same as The horizontal optical axes AX (optical axes of the lens groups G1 and G2 in FIG. 2) coincide. (Please read the precautions on the back before filling this page.) In addition, the exposure device 100 of this embodiment is provided with a peripheral portion of the projection field of view from between the projection optical system PL and the graticule R through the projection optical system PL. The photoelectric detection of the alignment optical system 230 through the lens (TTL) of the alignment mark formed on the wafer W or the reference mark plate FM, and through the beam splitter BS and the third The lens group G3 detects the half TTL of the alignment mark on the wafer W or the reference mark FM and the alignment mark on the reticle R through the beam splitter BS and the second and first lens groups G2 and G1. half-TTL) alignment optical system 232. Printed in the above structure by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the sum of the masses of both the reticle stage 206 and the reticle stage 210 and the wafer stage 14 are the first wafer stage. The ratio of the sum of the masses Mw of both the body 208 and the second wafer stage 220 is set to be equal to the reduction magnification Mpl of the projection optical system PL. In the case of this embodiment, as described above, since the reduction magnification Mpl of the projection optical system PL is 1/4, the mass ratio Mr / Mw is also set to 1/4. For a specific example, although there is a great relationship with the diameter of the wafer W used, the total mass Mw of the wafer stage can be about 40 ~ 100Kg, and the total mass halo of the reticle stage can be made. Mr is about 10 ~ 25Kg. Fig. 4 shows a configuration of a control system of the exposure apparatus 100 of the first embodiment. The control system includes an alignment control system 259, a platform main control system 260, a driving circuit 253, a driving system 254, a main scanning driving system 25S, and a driving circuit 256. Here, the functions of the above-mentioned components of the control system will be described. 24 This paper size is applicable @National Standard (CNS) A4 specification (210 X 297 mm) 43 ^ 4 16 ^ (A7 __B7_____ V. Description of the invention (θ) (Please read the precautions on the back before filling this page) The detection information from the TTL alignment optical system 230 and the detection information from the semi-TTL alignment optical system 232 are input to the alignment control system 259, and the wafer W, the reticle R, Or the coordinate position and position deviation of the alignment mark on the reference mark board FM. The platform main control system 260 is connected to a mini computer for operation not shown in the figure, and is connected to a separate drive control Each of the aforementioned linear motors 214, 216, 240, and 242, and the drive system 254 'of the reticle micro-motion stage 210 are the main scanning drive system 255, the drive circuit 256, and the drive circuit 253. The drive circuit 253 is based on the interference from the reticle side. The position information PX 'PY, PΘ and the command information from the platform main control system 260 are used to automatically measure the position information PX' PY, PΘ of the X direction, Y direction, and rotation (yaw) direction measured by RiFx, RIF0, and RIFy. Control so that The reticle R moves slightly during alignment and scanning exposure. In addition, the drive system 254 is based on the position information PX (or speed information Vx) measured by the interferometer RiFx on the reticle side and from the main control system of the platform. The second linear motor 214 is automatically controlled by the command information of 260. It is printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Furthermore, the main scanning drive system 255 is mainly operated during scanning exposure, and the continuous monitoring is performed by the marking side. One of the velocity information Vx (or position information PX) measured by the interferometer RiFx and the velocity information Vx (or position information PX) measured by the wafer-based WIFx or continuous monitoring of both And automatically control the first linear motor 2 丨 6 so that the absolute speed of at least one of the reticle stage 206 and the first wafer stage 208 is related to the Chinese paper standard (CNS > A4). Specifications (210 ^ 297 mm) 43Λ4 \ 6 *, a? ______ B7 V. Description of the invention (β) The command information from the platform main control system 260 is equal. The drive circuit 256 is based on the wafer-side interferometer WIFx, WIFy measured Setting information PX, PY, PΘ and command information from the platform main control system 260 to automatically control the aforementioned pair of linear motors 240 and 242. Next, the exposure apparatus 100 of the first embodiment described above will be scanned. The action during exposure. Here, the alignment of the semi-TTL alignment optical system 232, the alignment of the TTL alignment optical system 230, and the global alignment of the wafer W, And 'Preparation for measurement warfare using the base line of the reference mark board FM. First, in the platform main control system 260, the position of one end of a specific lens area on the wafer W in the X-axis direction is determined in the exposure filter of the projection optical system PL, and a command is supplied to the drive system 254 and The driving circuit 256 drives the linear motor 216 and the linear motors 240 and 242. As a result, the X movement of the second wafer stage body 220 and the first wafer stage body 208 is moved in a direction opposite to the reticle stage body 206, and the first wafer stage body 208 is driven in the Y direction. In the X-axis direction of the lens area, one end portion is determined in the exposure filter of the projection optical system PL. Next, in the platform main control system 260, the second linear motor 2H is driven via the drive system 254 to return the marking base 206 to a specific reset position. Thereby, the other end portion of the reticle in the X-axis direction is made to coincide with the exposure filter of the projection optical system PL. Furthermore, in this case, the second linear motor 214 is automatically controlled in accordance with the measurement of the interferometer 250 for the marking line without changing the position of the marking line body 206 in the X direction, and the 26th line is driven. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)

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I I 經濟部智慧財產局員工消費合作社印製 η Α7 Β7 五、發明說明（>v ) 1線性馬達216並使第1、第2晶圓台體208、220 —體的 在基座構造體200上單獨的在X方向移動後，藉由依據標 線用干涉計250的計測値在僅對第2線性馬達214進行自 動控制而使標線台體206在基座構造體200上單獨的在X 方向移動。 其次，在平台主控制系統260中供應指令至主掃描驅 動系統255，驅動線性馬達216並開始對該鏡頭區域曝光 。在本第1實施例的場合，由於晶圓台14及標線台體206 在在基座構造體200上均是經由空氣軸程而被浮動支撐， 所以若是供應驅動電流至第1線性馬達216的驅動線圈 216B，則第1晶圓台體208及第2晶圓台體220會一體的 依據動量守恆定理而在基座構造體200的上面，譬如說， 以速度Vw在+X方向移動；而標線台體206會在基座構造 體200的上面以速度Vr在-X方向移動。在此場合，如前 所述的，由於是將標線台體206及標線微動台210兩者質 量的總和Mr、與、晶圓台14整體的質量Mw的比設定爲 等於投影光學系統PL的縮小倍率1/4，所以由動量守恆定 理無論是在加速時、等速時、減速時，標線台體206及晶 圓台14的速度比均爲4 : 1，即是，等於縮小倍率Mpl的 倒數。因此，只要僅對晶圓台14及標線台體2〇6之一的速 度（或是位置）進行自動控制，便一直能夠確實的對兩者進 行同步掃描。 因爲各掃描速度Vw、Vr的絕對値(相對於基座構造體 200的速度)在掃描曝光時會影響到供應至晶圓W上的曝光 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------户 經濟部智慧財產局貝工消費合作社印製 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（) 量，因此需要由主掃描驅動系統2S5持續的監視輸出自標 線台體206的X方向位置計測用干涉計RIFx或輸出自第1 晶圓台體208的X方向位置計測用千涉計WIFx之一的速 度資訊，並對第1線性馬達216的驅動進行自動控制以使 其速度爲所指定的一定値 譬如說，在對標線台體206進行自動控制的場合，假 設即使標線台體206做震動的動作，晶圓台14也會以維持 與質量比的倒數相同的速度比的狀態而做與標線台體206 類似的震動動作·>再者，由於動量守恆使系統的重心位置 保持一定，所以不會使基座構造體200搖晃。因此，兩者 在掃描曝光時的同步誤差可保持爲零。 如此，在完成晶圓W上的一個鏡頭區域的曝光時，在 平台主控制系統260中便可經由驅動電路256而驅動線性 馬達24〇、242，以將與晶圓W上的該曝光完成的鏡頭區 域鄰接的鏡頭區域的位置決定於投影光學系統PL的曝光 濾光片內（進行步進）。在此位置決定後，在平台主控制系 統260中經由主掃描驅動系統255而驅動線性馬達216， 使標線台體206向著與先前相反的方向(+X方向)掃描並開 始該鏡頭區域的曝光。在此場合，晶圓台14在-X方向係 以標線台體2〇6的1/4的速度掃描。 以後同樣的以步進掃描方式對晶圓W上的鏡頭區域進 行曝光。 如以上所說明的，在本第1實施例中，僅將標線側的 平台體及晶圓側的平台體的質量比Mr/Mw設定爲與投影光 28 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） (請先閱讀背面之注意事項再填寫本頁) i — ^---------产 ^ 344 16® a? __B7 _ 五、發明說明（4 ) 學系統PL的縮小倍率Mpl相等，便可不需設置複雜的同 步控制電路，再者，也不需使用動特性特別優異的平台及 主動防震裝置等特殊的防震裝置，而依據動量守恆定理便 能夠以簡單的構成使標線台體206及晶圓台14保持零同步 誤差的進行掃描。再者，由於標線台體206及晶圓台14( 晶圓台體2〇8、2；20)係依據動量守恆定理而互相逆向移動 ，所以也可以獲致包含基座構造體200的裝置本體在X方 向的重心位置幾乎不變而可降低裝置搖晃的效果。 在本第1實施例中，如上所述的，在標線台體206及 基板平台（晶圓台體208、220)之間配置延設於掃描方向(X 方向）的線性馬達216,使晶圓台14由空氣軸承所支撐並 在基座構造體200上可以以非接觸狀態在X方向做一度空 間的移動；且使標線台體206由空氣軸承所支撐並在基座 構造體200上可以以非接觸狀態在X方向做一度空間的移 動。 因此，在供應驅動電流至線性馬達216的驅動線圈部 216B的期間，可依據動量守恆定理而控制標線R及晶圓 W在X方向的相對位置關係。但是，若是供應至線性馬達 216的電流停止，則便會失去保持標線台體206及晶圓台 14在X方向的相對位置關係的強制力。 因此，在停止供電至線性馬達216時，由於來自於曝 光裝置內部的震動源(其他的馬達等）的震動、來自於曝光 裝置外部的空調機器等的震動、或是由曝光裝置整體的稍 微傾斜而有可能會使標線台體206及晶圓台14在X方向 29 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公.^) — — (請先閱讀背面之ii意事項再填寫本頁> 裝---- 訂---------_ 經濟部智慧財產局員工消費合作杜印製 經濟部智慧財產局貝工消費合作社印製 4 344 1 6'篇 A7 B7 五、發明說明) 的相對位置關係逐漸的偏差。 在此場合，可對線性馬達216的線圈配置、各線圈的 卷線構造、驅動電流的供應控制等下工夫，而也能夠使線 性馬達爲能夠自動控制的使標線台體206及晶圓台14在X 方向的相對變位保持爲零。在此場合，只要控制供應至線 性馬達216的電流能夠很容易的使標線R及晶圓W在X 方向的相對位置關係靜止。但是在此場合，也有可能由於 各種震動及曝光裝置的傾斜而使標線台體206及晶圓台14 一體的在基座構造體200上在X方向偏移。 無論是那一種場合，標線台體206對晶圓台14及基 座構造體200均毫無疑問的會產生偏移，這代表固定於基 座構造體200的照明系統212的光軸(或是照明光束）、及 、在掃描曝光開始時所設定的與標線R在X方向的相對位 置關係會產生變化，而會對步進掃描方式的曝光程序 (sequence)造成重大的影響。 第線性馬達214具有功能可解決此種不便。即是， 在本第1實施例的曝光裝置100中，由於除了依據動量守 恆定理的速度比而控制標線台體206及晶圓台14(晶圓台 體2〇8、22〇)的相對位置關係第線性馬達216之外，也設 置了控制標線台體2〇6對基座構造體200的絕對位置的第 線性馬達214，所以在掃描曝光時依據動量守恆定理使標 線台體206及晶圓台14(晶圓台體208、220)逆向移動時， 使第線性馬達2!4的驅動線圈部214B的供電端子爲開路 無負載狀態，另一方面，在控制標線台體206的絕對位置 30 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------- * I I I (請先閱讀背面怎注項再填寫本頁) tr.--------- A7 4； 344 1 ______B7_ 五、發明說明（4 ) 時’能夠依據來自於標線台體206對基座構造體200在X 方向位置計測用干涉計RIFx的位置資訊而對第線性馬達 214進行自動控制。 因此，藉由依S&S方式的曝光順序而聯合控制各線性 馬達’便能夠持續正確的管理標線R對照明光束的位置。 而且，因爲也能夠使在曝光處理結束後標線R、晶圓 W對基座構造體200的位置關係在曝光處理開始時的位置 關係相同’因此也具有能夠防止在交換標線及交換晶圓時 ’在做爲自動搬送機構的機械手臂等間交接位置的偏移的 優點。 再者’雖然在上述第1實施例中係以使用使標線R的 圖案的倒立像投影至晶圓W上的倒立式光學系統來做爲本 例的投影光學系統’但是在對上下對稱的電路圖案進行曝 光的場合等，也可以是使用將電路圖案的正立像結像至感 光基板正立式光學系統來做爲投影光學系統。 而且，上述第1實施例中，雖然投影光學系統的縮小 倍率爲1M，但是投影光學系統的縮小倍率可以是任何倍數 。譬如說’即使縮小倍率爲1倍(等倍），本發明的優點也 會很大°即是’因爲動量守恆所以平台的移動不會使系統 重心移動；因爲平台的移動的反作用力不會使本體搖晃所 以不需要主動防震裝置等高價的防震裝置等，而且即使一 方的平台產生震動的動作，另一方的平台也會依此而做同 樣的震動動作，而不會產生同步誤差。 [第2實施例] 3! 本 尺度適用中國ΐ家標準（CNS)A4規格（210 X 297公釐) -- <請先Μ讀背面之注意事項再填寫本頁) ^ ί I I----< --------^ 經濟部智慧財產局員工消費合作杜印製 經濟部智慧財產局員工消費合作社印製 344 1 6 m Λ7 B7 五、發明說明（2?) 其次，參照圖5來說明本發明的第2實施例。此處， 對與前述第1實施例相同或同等的構成部份使用同一圖號 ，並簡化或省略其說明。在此第2實施例中，如圖5所示 的，其特徵係倂設了 ：與線性馬達214的功能相關的發電 用線圈257、及、消耗來自於此線圈257的電流的再生制 動用的負載電路258。控制系統的其他構成及其他的裝置 構成均與前述第1實施例相同。 在此第2實施例中係設置了：利用第2線性馬達214 ，在掃描曝光時使標線台體2〇6及基板平台(晶圓台體208 、22〇)的速度比在，譬如說，約±〇·1%的範圍內可以以 p.p.m.單位的解析度做微調整的再生控制電路，具體而言 如圖5中的發電用線圈257及負載電路258，而使掃描方 向的複製倍率可做微小變化(在晶圓W上的掃描方向的設 計尺寸爲35mm時其全體約可做數百run的伸縮）。 若對此做更詳細的敘述，則發電用線圈257係在第2 線性馬達214內設置特殊的發電用線圈，或是使驅動用線 圏也可兼用爲發電用線圈；在第1線性馬達216使標線台 體及晶圓台逆向移動的期間，藉由將負載電路258(包含適 當的負載電阻器）接續至此發電用線圈端子並進行再生控制 ，便能夠使標線台體206在X方向的動負載增大，並使標 線台體206及晶圓台14的速度比產生微小量變化。 再者，爲了控制再生制動量，負載電路258係使來自 於發電用線圈257的電流經由高速切換(switching)元件等 而流入負載電阻器，而切換元件的開啓、關閉頻率及開啓 32 冬紙張尺度適用中國國家標準（CNS)A4規格（21G X W7公爱) (請先閱讀背面之注意事項再填寫本頁) 裝--------11----------^ 1 Qm a? --------- B7 五、發明說明（ 時間及關閉時間的工作比(duty cycle)等均是可在大範圍內 變化。 此處，爲了精密的微調整速度比Vw/Vr及縮小倍率， 而利用與第2線性馬達214的驅動用線圈部214B —體的 發電用線圈257(參照圖5)及負載電路258，以增加標線台 體206在移動方向的動負載來進行控制。此載電路258對 發電用線圈257係作用爲可變負載電阻器，並具有可依據 來自於主掃描驅動系統255的控制指令而使取出自發電用 線圈257的電流做幾乎爲連續的變化的功能。 在掃描曝光期間，雖然標線台體206想要以速度Vr 移動’但是若是有適當的負載電阻接續至發電用線圈257 的端子，則對應於此負載電阻所消耗的能量的動量便會被 加到標線台體206。此相當於使標線台體206的外觀質量 Mr增加了微小量。因此，便可對晶圓台14及標線台體 206的速度比Vw/Vr進行微調整。 在此場合，因爲標線台體206的外觀質量Mr只能增 大，因此質量比Mr/Mw會變大而使速度比Vw/Vr調整向 Mpl<(Vw/Vr)。因此，只要設定各平台體的質量使靜止狀 態的質量比Mr/Mw稍微小於縮小倍率Mpl，並在掃描曝 光時一直適度的調整再生制動量以使速度比與縮小倍率一 致即可。 另一方面，在依據動量守恆定理而使晶圓台14及標線 台體2〇6互相逆向掃描移動時，若是供電至第線性馬達 214的驅動線圈部2MB而與標線台體206的驅動倂用，則 33 {請先閱讀背面之沒意事項再填寫本頁) ! I t I I I 訂---------^ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） 4344 1 6« A7 ___B7_ 五、發明說明（；丨） 因爲能夠使標線台體2〇6的外觀質量稍微變小，因此也能 夠將速度比Vw/Vr調整向Mpl>(Vw/Vr)。 在以上所說明的第2實施例中，因爲很容易的便可藉 由控制再生制動量（來自於發電用線圈的電流）來對掃描曝 光時的標線R及晶圓W的掃描速度比做微調整，因此只要 從干涉計的計測結果檢測出標線R及晶圓W的速度比，並 對再生制動量進行回授(feedback)控制以使此檢測値變成爲 預先設定的値，便不僅能夠對所有掃描方向的複製倍率進 行微調整，也能夠藉由微妙的改變晶圓W上的鏡頭區域的 掃描開始部份及結束部份的速度比及鏡頭區域的中央部份 的速度比，便也能夠調整複製失真(distortion)。 再者，在上述第1、第2實施例中，雖然爲了在基座 構造體200上單獨的使標線台體206在掃描方向移動而設 置了線性馬達214,但是也可以是取代此線性馬達214或 是與其一起的設置用以使第1、第2晶圓台體208、220在 X方向確實的靜止及用以在基座構造體200上使第1、第2 晶圓台體208、220單獨的移動，而在基座構造體200及第 1晶圓台體208之間產生X方向推力的第3線性馬達，並 依據晶圓用干涉計252(WIFx)的計測値來對此第3線性馬 達進行自動控制。 其次說明，在上述第2實施例中，在附加上圖所未示 的第3線性馬達的場合，在將標線R的圖案區域對準至晶 圓W上的鏡頭區域並進行掃描曝光的場合的一連串的程序 〇 34 張尺度適用中國國家展"準"(ΟΝϋ規格（210 >^297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝！----· —-------'^ 經濟部智慧財產局員工消費合作社印製 A7 434416« _ B7____ 五、發明說明（u) (1) 將標線台體移動至載入(loading)位置，將標線R設 置於平台上。此時晶圓台14可以是依據動量守恆原理而隨 著標線台體的移動而逆向移動，也可以是由對第3線性馬 達進行自動控制而使其強制的靜止於特定位置。 (2) 移動各平台體206、208、220使標線台體206及晶 圓台體220被設定於投影光學系統的像視野的特定位置， 並經過投影光學系統而由對準檢測系統232相互的光電檢 測出固定於晶圓台體220上的基準標誌及標線R上的對準 標誌；並控制標線台體206上的微動台210以使標線R相 對於晶圓台體220的移動座標系統在X、Y、Θ各方向均整 合。在標線R在相對於晶圓台體220的移動座標系統整合 時，將來自於標線用干涉計250的X ' Y計測値、及、來 自於晶圓用干涉計252的X、Y計測値記憶爲1次整合達 成位置。其後，使位置關係可立即再現。 (3) 爲了將晶圓W載置於晶圓台體220上，將晶圓台 體220移動至特定的載入位置。其後，移動晶圓台體220 使附隨形成於晶圓W上的幾個鏡頭區域的對準標誌一個個 的配置於投影光學系統PL的視野內，並經過投影光學系 統PL而由對準檢測系統230依序檢測出各對準標誌。並 依據此檢測結果而決定晶圓W的鏡頭區域的配置座標系統 與標線R的圖案區域的相對位置關係(X、Y、Θ方向）。 (4) 在已決定的位置關係之中在X方向產生位置偏差時 ，驅動第3線性馬達使晶圓台14在自動鎖定(servo lock)對 基座構造體不會變位的狀態下，驅動第1線性馬達216使 35 本紙張尺度適用中國國家標準（CNS)A4規格（210x 297公釐） {請先閲讀背面之注意事項再填寫本頁) 裝--------1T----------产 經濟部智慧財產局員工消費合作社印製 4344 16^ A7 B7 五、發明說明（） 標線台體2〇6對晶圓台14在X方向微動。再者，晶圓w 上的鏡頭配列座標系統及標線R的圖案區域在Y方向的相 對位置誤差則由晶圓台體220或標線台體206上的微動台 210所補正，Θ方向的相對位置誤差則由線性馬達240、242 使晶圓台體220做微小旋轉而補正。再者，也可以是在晶 圓台體220上另外設置Θ平台。 (5) 如此，在X、Y、Θ各方向均使標線R的圖案區域與 晶圓W上的鏡頭配列座標系統精密的整合時，從干涉計讀 取標線台體206及晶圓台體220在X、Y方向的相對位置 關係並記憶爲2次整合達成位置。此2次整合達成位置在 對晶圓W曝光處理期間被利用爲各平台體的移動位置的管 理基準。 (6) 其次’調整標線台體2〇6在X方向的位置使標線R 的圖案區域可由照明光束而到達照射開始的位置，而且， 調整晶圓台14在X方向的位置使晶圓W上的一個鏡頭區 域可到達曝光開始的位置。 (7) 而後’驅動第1線性馬達216並依據動量守恆原理 而使標線台體2〇6晶圓台Μ以對應於投影光學系統pl的 結像倍率Mpl的特定速度比逆向移動。此時，在需要將掃 描方向的複製倍率的微調整抑制在兩平台間的速度比變動 的容許範圍內的場合，可依據速度比變化(或是相對位置關 係的變化)的精密計測結果而積極的控制第2線性馬達214 、第3線性馬達，以連續的微調整標線台體206或晶圓台 14的外觀上的質量即可。 36 本紙張尺度適用中國國家標準（CNS)A4規格<210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝.I I-----訂---------^ 經濟部智慧財產局員工消費合作杜印製 4344 1 6^ A7 B7 五、發明說明（β > [變型例] 其次，參照圖6Α、圖6Β來說明變型例。 此變型例的曝光裝置的特徵係：不僅是做爲感光基板 的晶圓W，做爲光罩的標線R也是水平的保持於標線台16 上。 此曝光裝置具有：經由空氣軸承13而浮動支撐於定盤 I2上的標線台16及基板平台14、及、由對電路圖案縮小 投影的反射光學系統所構成的投影光學系統PL、及、光源 20 « 在此變型例的曝光裝置中，基板平台14具有：浮動支 撐於定盤丨2上且在X軸方向可以移動的第1平台14Α、 及、在此第1平台14Α上在Υ軸方向由線性馬達所驅動的 第2平台14Β。晶圓W係保持於此第2平台14Β上。 標線台16係，如圖6Β所示的，配置爲跨越第1平台 14Α的狀態，在兩平台16、14Α之間則介裝了由線圈18Α 及磁石MB所構成的線性馬達18、18。 當來自於光源20的曝光光經由圖所未示的照明光學系 統而從下方對標線R照明時，細長的照明區域(對應於投影 光學系統的曝光濾光片）內的電路圖案像會經由投影光學系 統PL而縮小投影至晶圓W上。 因此，在此變型例的場合，也是若是將標線台16與基 板平台14的質量比設定爲與投影光學系統PL的縮小倍率 Mpl相同，則與上述各實施例相同的，可持續使兩平台16 、14的同步誤差爲零的進行電路圖案的掃描曝光。而可獲 37 (請先閱讀背面之注意事項再填寫本ί 裝---I ---—1τ·----! -'^ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用十國0家標準（CNS)A4規格（210 X 297公釐） 434416* a? _ B7_____ 五、發明說明（β ) 致同樣的效果。 再者，在上述第1、第2實施例中，雖然是例示了感 光基板係水平的保持於基板平台上的場合，即是使用了橫 置基板的場合，但是本發明也適用於將感光基板垂直的保 持於基板平台，即是使用縱置基板的曝光裝置。 再者，在上述第1、第2實施例中，雖然是例示了使 用線性馬達來做爲在非掃描方向驅動第2平台的驅動手段 的場合，但是本發明並不限於此，而也可以是使用螺絲來 在非掃描方向驅動第2平台。 再者，如前所述的，實施例1所使用的投影光學系統 PL的詳細的說明已經詳細的開示於特開平5-88087號公報 及特開平6-300973號公報及與其對應的美國專利；此處援 用這些文獻來做爲本文所記載的一部份。再者，可適用本 發明的步進掃描方式的曝光裝置及曝光方法已經開示於特 開昭56-111218號公報 '特開平2-229423號公報及特開平 4477612號公報、及、與其對應的美國專利；此處援用這 些文獻來做爲本文所記載的一部份。 如以上所說明的，本發明具有：以簡單的構成便能夠 降低產生於構成裝置的構造物的應力，可抑制裝置整體的 傾斜，而且可以改善光罩平台及基板平台的同步性能的以 往的裝置所沒有的優點。 [符號說明] 10 曝光裝置 12 定盤(基座構件） 38 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) --------訂-------- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 在3从'6· A7 B7 五、發明說明（A) 13 空氣軸承 14 晶圓台(基板平台） 16 光罩平台 18 第1線性馬達 100 曝光裝置 200 基座構造體(基座構件） 206 標線台體(光罩平台） 208 第1晶圓台體(第1晶圓台） 214 第2線性馬達 216 第1線性馬達 220 第2晶圓台體(第2晶圓台） 232 半TTL對準檢測系統 257 發電用線圈(再生制動控制電路的一部分) 258 負載電路(再生制動控制電路的一部分） R 標線(光罩） W 晶圓(感光基板） PL 投影光學系統 G1 第1透鏡群(透過光學元件） G2 第2透鏡群(透過光學元件） G3 第3透鏡群(透過光學元件） BS 分束器(光分割器） MR 凹面鏡(反射光學元件） 39 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 * 297公釐）»N--t— -iT ° J > It ϋ n l. II Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Α7 Β7 V. Description of the invention (> v) 1 Linear motor 216 After the wafer stage bodies 208 and 220 are moved on the base structure 200 individually in the X direction, the second linear motor 214 is automatically controlled only by the measurement of the interferometer 250 according to the reticle. The reticle stage 206 moves on the base structure 200 alone in the X direction. Secondly, the platform main control system 260 supplies instructions to the main scanning driving system 255, drives the linear motor 216, and starts exposing the lens area. In the case of the first embodiment, since the wafer stage 14 and the reticle stage 206 are floatingly supported on the pedestal structure 200 via an air-axis path, if a driving current is supplied to the first linear motor 216 Drive coil 216B, the first wafer stage 208 and the second wafer stage 220 will be integrated on the base structure 200 according to the conservation of momentum principle, for example, moving at a speed Vw in the + X direction; The reticle stage 206 moves on the base structure 200 at a speed Vr in the -X direction. In this case, as described above, the ratio of the total mass Mr of the reticle stage 206 and the reticle micro stage 210 to the mass Mw of the entire wafer stage 14 is set equal to the projection optical system PL. The reduction ratio is 1/4, so from the momentum conservation theory, the speed ratio of the reticle stage 206 and the wafer stage 14 is 4: 1 during acceleration, constant speed, and deceleration, that is, equal to the reduction ratio. Mpl countdown. Therefore, as long as the speed (or position) of only one of the wafer stage 14 and the reticle stage 206 is automatically controlled, it is always possible to reliably perform synchronous scanning of both. Because the absolute speed of each scanning speed Vw, Vr (relative to the speed of the pedestal structure 200) will affect the exposure supplied to the wafer W during scanning exposure. 27 This paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) (Please read the precautions on the back before filling out this page) -------- Order -------- Printed by the Shellfish Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Household Economy Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention, so the main scanning drive system 2S5 needs continuous monitoring output from the interferometer RIFx for position measurement in the X direction of the marking table 206 or output from The speed information of one of the interferometers WIFx for the X-direction position measurement of the first wafer table 208, and the drive of the first linear motor 216 is automatically controlled so that the speed is constant as specified. When the reticle stage 206 performs automatic control, it is assumed that even if the reticle stage 206 performs a vibration action, the wafer stage 14 will perform the same operation as the reticle stage 206 while maintaining the same speed ratio as the inverse of the mass ratio. Similar vibration action > Also, due to momentum Constant position of the center of gravity of the system is kept constant, so that the base structure 200 without shaking. Therefore, the synchronization error between the two during scanning exposure can be kept to zero. In this way, when the exposure of a lens area on the wafer W is completed, the platform main control system 260 can drive the linear motors 24 and 242 through the driving circuit 256 to compare the exposure with the completion of the exposure on the wafer W. The position of the lens area adjacent to the lens area is determined in the exposure filter (stepping) of the projection optical system PL. After this position is determined, the linear motor 216 is driven in the platform main control system 260 via the main scanning driving system 255, so that the reticle stage 206 is scanned in the opposite direction (+ X direction) as before and the exposure of the lens area is started . In this case, the wafer stage 14 is scanned at a speed of 1/4 of the reticle stage 206 in the -X direction. Thereafter, the lens area on the wafer W is exposed in the same manner in a step-and-scan manner. As explained above, in this first embodiment, only the mass ratio Mr / Mw of the platform body on the reticle side and the platform body on the wafer side is set to be equal to the projection light. ) A4 size (210x 297 mm) (Please read the notes on the back before filling out this page) i — ^ --------- Production 344 16® a? __B7 _ V. Description of the invention (4) The reduction magnification Mpl of the learning system PL is equal, so it is not necessary to set up a complex synchronous control circuit, and further, it is not necessary to use a special shock-proof device such as a platform with particularly excellent dynamic characteristics and an active shock-proof device. The simple structure allows scanning of the reticle stage 206 and the wafer stage 14 with zero synchronization errors. In addition, since the reticle stage 206 and the wafer stage 14 (wafer stage 208, 2; 20) move counter to each other in accordance with the momentum conservation theory, a device body including the base structure 200 can also be obtained The position of the center of gravity in the X direction is almost unchanged, which reduces the effect of the device shaking. In the first embodiment, as described above, the linear motor 216 extending in the scanning direction (X direction) is arranged between the reticle stage 206 and the substrate stage (wafer stage 208, 220), so that the crystal The circular table 14 is supported by the air bearing and can move in the X direction in a non-contact state by one degree of space in the non-contact state; and the marking table 206 is supported by the air bearing and is on the base structure 200 You can make one degree of spatial movement in the X direction in a non-contact state. Therefore, while the drive current is supplied to the drive coil section 216B of the linear motor 216, the relative positional relationship between the reticle R and the wafer W in the X direction can be controlled according to the conservation of momentum theory. However, if the current supplied to the linear motor 216 is stopped, the force for maintaining the relative positional relationship between the reticle stage 206 and the wafer stage 14 in the X direction will be lost. Therefore, when the power supply to the linear motor 216 is stopped, vibration from a vibration source (other motor, etc.) inside the exposure device, vibration from an air-conditioning device, etc. outside the exposure device, or a slight tilt of the entire exposure device It is possible that the reticle stage 206 and the wafer stage 14 will be in the X direction. 29 The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm. ^) — — (Please read the second notice on the back first Fill in this page again> Pack ---- Order ---------_ Consumption Cooperation between Employees of the Intellectual Property Bureau of the Ministry of Economy A7 B7 V. Description of the invention) The relative positional relationship gradually deviates. In this case, the coil arrangement of the linear motor 216, the winding structure of each coil, and the control of the supply of drive current can be worked, and the linear motor can also be used to automatically control the reticle stage 206 and the wafer stage 14 The relative displacement in the X direction remains at zero. In this case, as long as the current supplied to the linear motor 216 is controlled, the relative positional relationship between the reticle R and the wafer W in the X direction can be easily stopped. However, in this case, it is possible that the reticle stage 206 and the wafer stage 14 are integrally shifted in the X direction on the base structure 200 due to various vibrations and inclination of the exposure apparatus. In either case, the reticle stage 206 will undoubtedly shift the wafer stage 14 and the base structure 200. This represents the optical axis (or the optical axis of the lighting system 212 fixed to the base structure 200). Is the illumination beam), and the relative positional relationship with the graticule R in the X direction set at the start of scanning exposure will change, and it will have a significant impact on the exposure sequence of the step-and-scan method. The first linear motor 214 has a function to solve this inconvenience. That is, in the exposure apparatus 100 according to the first embodiment, the relative positions of the reticle stage 206 and the wafer stage 14 (wafer stage bodies 208, 22) are controlled in addition to the speed ratio based on the conservation of momentum. In addition to the linear motor 216 in positional relationship, a linear motor 214 is also provided to control the absolute position of the reticle stage 206 to the base structure 200. Therefore, the reticle stage 206 is made according to the conservation of momentum principle during scanning exposure. When the wafer stage 14 (wafer stage bodies 208, 220) moves in the reverse direction, the power supply terminal of the drive coil section 214B of the second linear motor 2! 4 is left open and no load. On the other hand, the control line stage body 206 is controlled. Absolute position of 30 This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) -------------- * III (Please read the note on the back before filling in this Page) tr .--------- A7 4; 344 1 ______B7_ 5. In the description of the invention (4), 'can be used to measure the interference of the base structure 200 in the X-direction position from the reticle base 206 The position of the RIFx is used to automatically control the linear motor 214. Therefore, by controlling the linear motors' in accordance with the exposure sequence according to the S & S method, the position of the reticle R with respect to the illumination beam can be continuously and accurately managed. Furthermore, since the positional relationship between the reticle R and the wafer W on the susceptor structure 200 after the exposure process is completed can also be the same as the positional relationship at the start of the exposure process, it is also possible to prevent the exchange of the reticle and the wafer. It has the advantage of shifting the transfer position between robot arms and the like as an automatic transfer mechanism. Furthermore, although the first embodiment described above uses an inverted optical system that projects an inverted image of the pattern of the reticle R onto the wafer W as the projection optical system of this example, it is symmetrical in the vertical direction. When the circuit pattern is exposed, or the like, an erect image of the circuit pattern may be used as a projection optical system to form an upright optical system of the photosensitive substrate. Furthermore, in the first embodiment described above, although the reduction magnification of the projection optical system is 1M, the reduction magnification of the projection optical system may be any multiple. For example, 'Even if the reduction ratio is 1 time (equal multiple), the advantages of the present invention will be great. That is,' Because momentum is conserved, the movement of the platform will not cause the center of gravity of the system to move; The body shakes, so no expensive anti-vibration device such as an active anti-vibration device is needed, and even if one platform generates a vibration action, the other platform will perform the same vibration action accordingly without generating a synchronization error. [Second embodiment] 3! This standard applies the Chinese Standard (CNS) A4 specification (210 X 297 mm)-< Please read the precautions on the back before filling this page) ^ I I-- -< -------- ^ Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation Du printed by the Intellectual Property Bureau of the Ministry of Economic Affairs printed by the Consumer Cooperatives of the Ministry of Economic Affairs 344 1 6 m Λ7 B7 V. Description of the invention (2?) Second, A second embodiment of the present invention will be described with reference to FIG. 5. Here, the same reference numerals are used for the same or equivalent components as those in the first embodiment, and the description is simplified or omitted. In this second embodiment, as shown in FIG. 5, the features are provided: a coil 257 for power generation related to the function of the linear motor 214, and a coil for regenerative braking that consumes current from the coil 257. Load circuit 258. The other configurations of the control system and other device configurations are the same as those of the first embodiment. In this second embodiment, a second linear motor 214 is provided to make the speed ratio of the reticle stage 206 and the substrate stage (wafer stage 208, 22) at the time of scanning exposure, for example, In the range of about ± 0.1%, the regeneration control circuit can be fine-tuned with a resolution in ppm units, specifically as shown in the power generation coil 257 and the load circuit 258 in FIG. 5, so that the copy magnification in the scanning direction can be Make small changes (when the design size of the scanning direction on the wafer W is 35 mm, the whole can be extended and retracted by hundreds of runs). To describe this in more detail, the power generating coil 257 is provided with a special power generating coil in the second linear motor 214, or the driving coil can also be used as a power generating coil; in the first linear motor 216 During the reverse movement of the reticle stage and wafer stage, by connecting a load circuit 258 (including an appropriate load resistor) to the power generation coil terminal and performing regeneration control, the reticle stage 206 can be moved in the X direction. The dynamic load increases, and the speed ratio of the reticle stage 206 and the wafer stage 14 changes slightly. In addition, in order to control the amount of regenerative braking, the load circuit 258 causes the current from the power generating coil 257 to flow into the load resistor through a high-speed switching element, etc., and the switching element is turned on and off at a frequency and turned on. Applicable to China National Standard (CNS) A4 specification (21G X W7 public love) (Please read the precautions on the back before filling out this page) Installation -------- 11 ---------- ^ 1 Qm a? --------- B7 V. Description of the invention (Duty cycle of time and closing time, etc. can be changed within a wide range. Here, for precise fine adjustment of speed ratio Vw / Vr and the reduction ratio, and the power generating coil 257 (see FIG. 5) and the load circuit 258 which are integral with the driving coil portion 214B of the second linear motor 214 are used to increase the movement of the reticle body 206 in the moving direction. The load circuit 258 acts as a variable load resistor for the power generating coil 257, and has a function of controlling the current from the power generating coil 257 according to a control command from the main scanning driving system 255. Continuous change function. While scanning exposure, The line base 206 wants to move at the speed Vr. However, if an appropriate load resistance is connected to the terminal of the power generating coil 257, the momentum corresponding to the energy consumed by this load resistance will be added to the line base 206. This is equivalent to increasing the appearance quality Mr of the reticle stage 206 by a small amount. Therefore, the speed ratio Vw / Vr of the wafer stage 14 and the reticle stage 206 can be fine-tuned. In this case, because the reticle The appearance quality Mr of the table body 206 can only be increased, so the mass ratio Mr / Mw becomes larger and the speed ratio Vw / Vr is adjusted to Mpl < (Vw / Vr). Therefore, as long as the mass of each platform body is set to a static state The mass ratio Mr / Mw is slightly smaller than the reduction magnification Mpl, and the regenerative braking amount must be adjusted appropriately during the scanning exposure so that the speed ratio is consistent with the reduction magnification. On the other hand, the wafer stage 14 is made according to the principle of conservation of momentum. And the marking line body 206 are scanned in the opposite direction to each other, if the drive coil part 2MB powered by the linear motor 214 is used for the driving of the marking line body 206, then 33 {Please read the unintentional matter on the back first (Fill in this page)! I t III Order --------- ^ Printed by the Consumers' Cooperative of the Ministry of Economic Affairs and Intellectual Property of the People's Republic of China. The paper size is applicable to the Chinese National Standard (CNS) A4 Specification < 210 X 297 mm. 4344 1 6 «A7 ___B7_ V. Description of the invention (;) The appearance quality of the body 206 is slightly reduced, so that the speed ratio Vw / Vr can also be adjusted to Mpl > (Vw / Vr). In the second embodiment described above, since it is easy to control the regenerative braking amount (current from the coil for power generation), the scanning speed ratio of the reticle R and the wafer W during scanning exposure can be compared. Fine adjustment, so as long as the speed ratio of the reticle R and the wafer W is detected from the measurement results of the interferometer, and the regenerative braking amount is feedback controlled so that the detection 値 becomes a preset 値, not only It is possible to fine-tune the copy magnification in all scanning directions, and it is also possible to subtly change the speed ratio of the scanning start and end portions of the lens area on the wafer W and the speed ratio of the center portion of the lens area. It is also possible to adjust the copy distortion. Furthermore, in the first and second embodiments described above, a linear motor 214 is provided in order to separately move the graticule stage 206 in the scanning direction on the base structure 200, but it may be replaced by this linear motor. 214 is also provided together to make the first and second wafer tables 208 and 220 stand still in the X direction and to make the first and second wafer tables 208 and 208 on the base structure 200. 220 is a third linear motor that moves independently to generate X-direction thrust between the base structure 200 and the first wafer stage 208, and measures this by the measurement of the wafer interferometer 252 (WIFx). 3 linear motor for automatic control. Next, in the second embodiment described above, when a third linear motor (not shown in the figure) is added, when the pattern area of the reticle R is aligned with the lens area on the wafer W and scanning exposure is performed A series of procedures of 〇34 sheets are applicable to China National Exhibition " quasi " (ΟΝϋ specifications (210 > ^ 297 mm)) (Please read the precautions on the back before filling this page) ------- '^ Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 434416 _ _ B7____ V. Description of the invention (u) (1) Move the marking body to the loading position, The line R is set on the platform. At this time, the wafer table 14 can be moved in reverse with the movement of the marking table body according to the principle of conservation of momentum, or it can be forced to stand still by automatically controlling the third linear motor. (2) Each stage body 206, 208, 220 is moved so that the reticle stage body 206 and the wafer stage body 220 are set at a specific position in the image field of the projection optical system, and are aligned by the projection optical system. The photoelectric detection of the detection system 232 on the wafer stage 220 Quasi marks and alignment marks on the reticle R; and control the micro-motion stage 210 on the reticle table body 206 so that the moving coordinate system of the reticle R relative to the wafer table body 220 is integrated in each of the X, Y, and Θ directions When the reticle R is integrated with the mobile coordinate system of the wafer stage 220, the X ′ Y measurement from the reticle interferometer 250 and the X and Y from the wafer interferometer 252 The measurement / memory is a single integration to achieve the position. After that, the positional relationship can be reproduced immediately. (3) In order to place the wafer W on the wafer stage 220, the wafer stage 220 is moved to a specific loading position. After that, the wafer stage 220 is moved so that the alignment marks attached to the several lens areas formed on the wafer W are arranged one by one in the field of view of the projection optical system PL, and passed through the projection optical system PL. The alignment detection system 230 sequentially detects each alignment mark, and determines the relative positional relationship (X, Y, Θ direction) of the arrangement coordinate system of the lens area of the wafer W and the pattern area of the reticle R based on the detection result. (4) When a positional deviation occurs in the X direction among the determined positional relationships, The third linear motor is activated so that the wafer stage 14 will not be displaced by the servo lock on the base structure, and the first linear motor 216 is driven so that the paper size of this paper is in accordance with China National Standard (CNS) A4. (210x 297 mm) {Please read the notes on the back before filling out this page) Packing -------- 1T ---------- Printed by the Employees' Cooperative of the Intellectual Property Bureau of the Ministry of Industry and Economy 4344 16 ^ A7 B7 V. Description of the invention () The reticle stage 206 slightly moves the wafer stage 14 in the X direction. Furthermore, the relative position error in the Y direction of the lens alignment coordinate system and the pattern area of the reticle R on the wafer w is corrected by the micro stage 210 on the wafer stage 220 or the reticle stage 206. The relative position error is corrected by the linear rotation of the wafer stage 220 by the linear motors 240 and 242. Furthermore, a Θ stage may be separately provided on the wafer table body 220. (5) In this way, when the pattern area of the reticle R is precisely integrated with the lens arrangement coordinate system on the wafer W in each of the X, Y, and Θ directions, the reticle table body 206 and the wafer table are read from the interferometer. The relative positional relationship of the body 220 in the X and Y directions is memorized as the position of the secondary integration. This two-time integration attained position is used as a management standard for the movement position of each stage body during the wafer W exposure processing. (6) Next, 'adjust the position of the reticle stage 206 in the X direction so that the pattern area of the reticle R can reach the starting position from the illumination beam, and adjust the position of the wafer table 14 in the X direction to make the wafer A lens area on W can reach the position where the exposure starts. (7) Then, the first linear motor 216 is driven and the reticle stage 206 wafer stage M is moved in the reverse direction at a specific speed ratio corresponding to the junction image magnification Mpl of the projection optical system pl according to the principle of conservation of momentum. At this time, when it is necessary to suppress the fine adjustment of the copy ratio in the scanning direction within the allowable range of the speed ratio change between the two platforms, it can be actively based on the precise measurement result of the speed ratio change (or the change of the relative position relationship). It is sufficient to control the second linear motor 214 and the third linear motor to continuously fine-tune the appearance quality of the reticle stage 206 or the wafer stage 14. 36 This paper size applies to China National Standard (CNS) A4 specifications < 210 X 297 mm) (Please read the precautions on the back before filling this page). I I ----- Order ------ --- ^ Consumption Cooperation by Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs 4344 1 6 ^ A7 B7 V. Description of the Invention (β > [Modifications] Next, the modifications will be described with reference to FIGS. 6A and 6B. The characteristic of the exposure device: not only the wafer W as the photosensitive substrate, but also the reticle R as the photomask is horizontally held on the reticle stage 16. The exposure device has: The reticle 16 and the substrate stage 14 on the disk I2, and the projection optical system PL constituted by a reflective optical system for reducing and projecting a circuit pattern, and the light source 20 «In the exposure apparatus of this modification, the substrate stage 14 The first stage 14A is floatingly supported on the fixed plate 丨 2 and is movable in the X-axis direction, and the second stage 14B is driven by a linear motor in the y-axis direction on the first stage 14A. Wafer W The system is maintained on this second platform 14B. The 16 line marking platform, as shown in FIG. 6B, is configured A state where the first stage 14A is crossed, and linear motors 18 and 18 composed of a coil 18A and a magnet MB are interposed between the two stages 16 and 14A. When the exposure light from the light source 20 passes through illumination not shown in the figure When the optical system illuminates the marking line R from below, the circuit pattern image in the elongated illumination area (corresponding to the exposure filter of the projection optical system) is reduced and projected onto the wafer W through the projection optical system PL. Therefore, In the case of this modification, if the mass ratio of the reticle 16 and the substrate stage 14 is set to be the same as the reduction magnification Mpl of the projection optical system PL, then the same as the above embodiments, the two stages 16, The scanning error of the circuit pattern is 14 when the synchronization error of 14 is zero. You can get 37 (please read the precautions on the back before filling in this package) --- I ----- 1τ · ----!-'^ Economy The paper size printed by the Ministry of Intellectual Property Bureau ’s Consumer Cooperatives applies to 10 countries ’10 standards (CNS) A4 specifications (210 X 297 mm) 434416 * a? _ B7_____ 5. The description of the invention (β) has the same effect. In the above-mentioned first and second embodiments, Although the case where the photosensitive substrate is horizontally held on the substrate platform, that is, when a horizontal substrate is used is illustrated, the present invention is also applicable to holding the photosensitive substrate on the substrate platform vertically, that is, using a vertical substrate In addition, in the first and second embodiments described above, although a case where a linear motor is used as a driving means for driving the second stage in the non-scanning direction is exemplified, the present invention is not limited to this, but It is also possible to use a screw to drive the second stage in a non-scanning direction. Furthermore, as described above, the detailed description of the projection optical system PL used in Embodiment 1 has been disclosed in detail in Japanese Patent Application Laid-Open No. 5-88087 and Japanese Patent Application Laid-Open No. 6-300973 and corresponding US patents; These documents are cited here as part of this article. Further, an exposure apparatus and an exposure method to which the step scanning method of the present invention can be applied have been disclosed in JP-A-56-111218, JP-A-2-229423, and JP-A-4776612, and corresponding US Patents; these documents are incorporated herein as part of this document. As described above, the present invention has a conventional device that can reduce the stress generated in the structure constituting the device with a simple configuration, can suppress the overall tilt of the device, and can improve the synchronization performance of the mask stage and the substrate stage. No advantages. [Explanation of symbols] 10 Exposure device 12 Fixed plate (base member) 38 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page)- ------ Order -------- Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs printed on 3 from '6 · A7 B7 V. Description of Invention (A) 13 Air bearing 14 Wafer stage (substrate stage) 16 Mask stage 18 First linear motor 100 Exposure device 200 Base structure (base member) 206 Marking stage (mask stage) 208 First wafer stage (First wafer stage) 214 Second linear motor 216 First linear motor 220 Second wafer stage (second wafer stage) 232 Semi-TTL alignment detection system 257 Power generation coil (part of regenerative brake control circuit) 258 Load circuit (part of the regenerative braking control circuit) R Mark (mask) W Wafer (photosensitive substrate) PL Projection optical system G1 First lens group (transmitting optical element) G2 Second lens group (transmitting optical element) G3 Third lens group (transmitting optics) BS beam splitter (Optical Splitter) MR Concave Mirror (Reflective Optical Element) 39 (Please read the precautions on the back before filling out this page) This paper size applies to China National Standard (CNS) A4 (210 * 297 mm)

Claims (1)

經濟部智慧財產局員工消脅合作社印製 六、申請專利範， ι·一種曝光裝置，係使光罩及基板持續同步移動，並 經由投影光學系統而將形成於前述光罩的圖案複製至前述 基板，其特徵在於，係具有： 浮動支撐於基座構件上的基板平台， 具有前述基板平台的質量乘以前述投影光學系統的縮 小倍率的質量，且浮動支撐於前述基座構件上的光罩平台 ，以及 設置於前述兩平台之間，並驅動前述基板平台及光罩 平台以使前述光罩及基板互相逆向移動的第1驅動構件。 2. 如申請專利範圍第1項之曝光裝置，其中： 前述投影光學系統係將形成於前述光罩的圖案的倒立 像投影至前述基板的光學系統。 3. 如申請專利範圍第1或第2項之曝光裝置，其中： 係將前述基板水平的保持於基板平台上，且將前述光 罩垂直的保持於光罩平台上，而且’前述投影光學系統係 包含複數的透過光學元件、分束器、反射光學元件’並將 配置於物體面的前述光罩的圖案以既定的縮小倍率投影至 配置於成像面的前述基板上° 4. 如申請專利範圍第3項之曝光裝置’其中： 更具有：經由前述分束器而能夠檢測出形成於前述光 罩的對準標誌及基板上的對準標誌之半TTL對準檢測系統 〇 5. 如申請專利範圍第1項之曝光裝置，其中： 在前述基座構件及前述光罩平台之間設置驅動該光罩 本紙張尺度遴用中國國家梂半（CNS ) ( 21〇>^7公釐） ----r-----士木----------:iT (請先閲清背面之注意Ϋ項再填寫本頁) 办3仏'6® ?! D8 經濟部智慧財產局員工消費合作社印製 、申請專利範圍 平台的第2驅動構件。 6. 如申請專利範圍第5項之曝光裝置，其中： 在前述基座構件及前述基板平台之間設置驅動該基板 平台的第3驅動構件。 7. 如申請專利範圍第6項之曝光裝置，其中： 在前述第2驅動構件及第3驅動構件的至少一方附設 再生制動控制電路，以對由前述第1驅動構件將前述兩平 平台同步移動時的速度比做微調整。 8. 如申請專利範圍第1、第5、第6、及第7項中任何 一項之曝光裝置，其中： 前述基板平台具有：驅動於前述基板所同步移動的第 1方向的第1平台，以及保持前述基板並與前述第1平台 一體的移動於前述第1方向、且由第1平台所引導而能夠 移動於與前述第1方向垂直的第2方向的第2平台。 9. 如申請專利範圍第1項之曝光裝置，其中： 前述基板平台係經由空氣軸承而浮動支撐於基座構件 上 上 請 I 本 装 訂 10.如申請專利範圍第1項之曝光裝置，其中： 前述光罩平台係經由空氣軸承而浮動支撐於基座構件 11.一種掃描曝光裝置，其所具備的投影光學系統係具 有分別與光罩及基板大致呈垂直的光軸，並經由前述投影 光學系統而將前述光罩的圖案複製至前述基板掃描，其特 徵在於，係具有： _ 2_ 本紙張尺度適用中國B家標率（CNS ) A4規格（210X297公釐） D8 D8 經濟部智慧財產局員工消費合作杜印奴 六、申請專利範圍 基座； 在前述基座上移動前述光罩的第1平台； 在前述基座上移動前述基板的第2平台；以及 爲了以對應於前述投影光學系統的倍率的速度比來同 步移動前述光罩及前述基板，而連接至前述第1平台及前 述第2平台的驅動系統； 前述驅動系統係將前述第1平台及前述第2平台沿著 既定方向做逆向驅動，以使由前述同步移動所產生的反作 用力大致互相抵銷。 12. 如申請專利範圍第11項之掃描曝光裝置，其中： 將前述第1平台與前述第2平台的質量比設定爲大致 與前述投影光學系統的縮小倍率一致。 13. 如申請專利範圍第11或第12項之掃描曝光裝置’ 其中： 前述投影光學系統包含折射光學元件及至少1個反射 光學元件；並爲能將前述光罩的圖案的部份倒立像縮小投 影至前述基板的光學系統。 14. 如申請專利範圍第11或第Π項之掃描曝光裝置’ 其中： 前述投影光學系統至少包含2個反射光學元件；且對 前述投影光學系統將其像面配置於物體面側。 15. 如申請專利範圍第13項之掃描曝光裝置’其中： 前述投影光學系統的前述反射光學元件包含反射鏡、 凹面鏡、及分束鏡中之至少之一。 _____3____ 本紙張尺度適用中®國家揉準（CNS > A4说格（2丨〇><297公釐） —^1 *^^1 -1-1· HI m ^^1 ^^1 HI.·*^fit ^^1 ^^1 . 戈 ]I---¾. (請先閱讀背面之注$項再填寫本頁) ABicD 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 16. 如申請專利範圍第I4項之掃描曝光裝置，其中： 前述投影光學系統的前述反射光學元件包含反射鏡、 凹面鏡、及分束鏡中之至少之~ ο 17. 如申請專利範圍第11項之掃描曝光裝置，其中： 前述投影光學系統的物體面及像面係配置於同一平面 內，且前述第1及第2平台分別與前述光罩及前述基板沿 著前述平面而移動。 18. 如申請專利範圍第14項之掃描曝光裝置，其中： 前述投影光學系統的物體面及像面係配置於同一平面 內，且前述第1及第2平台分別與前述光罩及前述基板沿 著前述平面而移動。 如申請專利範圍第Η項之掃描曝光裝置，其中： 更具有：相對於前述基座係配置於與前述投影光學系 統相反側，且以光束照射前述光罩的照明系統。 20. 如申請專利範圍第Π項之掃描曝光裝置，其中： 更具有：相對於前述基座係配置於與前述投影光學系 統相反側，且以光束照射前述光罩的照明系統。 21. 如申請專利範圍第1S項之掃描曝光裝置，其中： 更具有：相對於前述基座係配置於與前述投影光學系 統相反側，且以光束照射前述光罩的照明系統。 22. —種掃描曝光方法，係經由投影光學系統而將光罩 的圖案複製至基板，其特徵在於： 將前述光罩及前述基板配置於與前述投影光學系統的 光軸垂直的同一平面內， ^^1 m ^^^1 In ^^1 1^^1- - - I ^^^1 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家#车（CNS ) Α4规格（2丨〇><297公釐） 經濟部智慧財產局員工消費合作杜印製 7T、申請專利祀圍 將前述光罩的圖案的部份倒立像投影至前述基板上’ 使前述光罩及前述基板沿著前述平面上的既定方向逆 向地同步移動，藉此而使由前述同步移動所產生的反作用 力大致互相抵銷。 23. 如申請專利範圍第22項之掃描曝光方法’其中： 前述光罩及前述基板係以對應於前述投影光學系統之 倍率的速度比同步移動。 24. 如申請專利範圍第22或第23項之掃描曝光方法， 其中： 爲了使前述光罩的圖案重合對準至前述基板上的圖案 並進行複製，而在前述同步移動中調整前述光罩及前述基 板的速度比，以至少對前述基板上的圖案及前述光罩的圖 案像的倍率誤差及失真誤差之一進行補正。 25. 如申請專利範圍第1、5、6、7項中任一項之曝光 裝置，其中，前述驅動構件係藉由電磁作用來驅動。 26. 如申請專利範圍第25項之曝光裝置，其中，前述 驅動構件係包含線性馬達。 27· —種微元件，係經利用申請專利範圍第1或11項 之曝光裝置將前述光罩上的圖案複製至前述基板上所製造 者。 28. —種微元件之製造方法，係包含：使用申請專利範 圍第22項之曝光方法，以前述光罩上的圖案對前述基板進 行曝光。 29. —種曝光方法’係以載置於光罩平台上之光罩的圖 ----」__ 本紙張尺度逋用中國《家揉準（CNS ) Α4说格（210χ297公釐） I—. -- II - 1. I- ----- - · - ! -. (請先閱讀背面之注意事項再填寫本育) 处3在么' 6 ’ B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 案對載置於基板平台上之基板進行曝光；其中， 光罩平台與基板平台之一係移動於既定的方向上； 爲減少移動該平台所伴隨產生之力，另一平台係與該 平台移動同步般移動於與該既定方向爲相反的方向上。 30. —種曝光方法，係以載置於光罩平台上之光罩的圖 案對載置於基板平台上之基板進行曝光；其中， 係包含致動一設於前述光罩平台與前述基板平台之間 的驅動構件，使得一平台移動於既定的方向上，同時另一 平台係與該平台之移動同步般移動於與該既定方向的相反 方向上。 31. 如申請專利範圍第29項之曝光方法，其中，前述 光罩平台與基板平台的移動係藉由致動設於兩平台之間的 驅動構件來進行；係使得一平台於既定的方向移動，同時 另一平台則與該平台之移動同步地移動於與該既定方向爲 相反的方向上。 32. 如申請專利範圍第29或30項之曝光方法，其中， 前述圖案係經由投影光學系統使得該圖案以既定的倍率投 影於前述基板上。 33. 如申請專利範圍第32項之曝光方法，其中，前述 光罩平台係具有（前述基板平台之質量X前述倍率）的質量 〇 34. 如申請專利範圍第32項之曝光方法，其中，前述 投影光學系統係使得前述光罩之圖案的倒立像投影於前述 基板上。 I : ^^1 m HI . —^n ^^1 ^44 ^-5. (請先M讀背面之注意事項再填寫本頁) 本紙張尺度適用中國Η家標準（CNS ) A<*洗格（210X297公釐） 43¾¾ 1 6^.1 μ8 C8 I-— _ P8 /、、申清專利範圍 35. 如申請專利範圍第31項之曝光方法，其中，前述 光罩平台與前述基板平台係於基座構件上被支撐成浮動狀 筚。 36. 如申請專利範圍第35項之曝光方法，其中，前述 光罩平台與前述基板平台係經由空氣軸承而於基座構件被 支撐成浮動狀態。 37. 如申請專利範圍第36項之曝光方法，其中，前述 空氣軸承係真空預壓型空氣軸承。 38. 如申請專利範圍第32項之曝光方法，其中，前述 光罩平台與前述基板平台係以對應於前述投影光學系統之 倍率的速度比同步移動。 如申請專利範圍第38項之曝光方法，於前述光罩 平台與基板平台同步移動中，係包含調整前述速度比的操 作。 40. 如申請專利範圍第四或30項之曝光方法，其中， 前述光罩平台係使得前述光罩移動於既定面上，前述基板 平台係使得前述基板移動於相對該既定面爲大致垂直的面 上。 41. 如申請專利範圍第32項之曝光方法，其中，前述 光罩平台係使得前述光罩移動於與前述投影光學系統之光 軸爲垂直的平面上，則述基板平台係使得則述基板移動於 與該平面大致相同的平面內。 42·如申請專利範圍第35項之曝光方法，其中，係使 用設於前述基座構件與前述光罩平台之間的第2驅動構件 _ _ 7_ 本紙張尺度適用中囷囤家梯準（CNS ) Μ规格（2丨0X297公釐） I 装--- {請先S讀背面之注意事項再填寫本頁) --iT 經濟部智慧財產局員工消費合作社印製 Λ8 B8 C8 D8 經濟部智慧財產局員工消費合作社印製 六、申請專利範圍 而藉由電磁作用以驅動該光罩平台。 43. 如申請專利範圍第35或42項之曝光方法，其中， 係使用設於前述基座構件與前述基板平台之間的第2驅動 構件而藉由電磁作用以驅動該基板平台。 44. 如申請專利範圍第30或31項之曝光方法，其中， 前述驅動構件係藉由電磁作用來驅動平台。 45. 如申請專利範圍第44項之曝光方法，其中，前述 驅動構件係包含線性馬達。 46. 如申請專利範圍第32項之曝光方法，其中，前述 投影光學系統係包含複數之透過光學元件、分束器、反射 光學元件，以使得前述光罩圖案以既定的縮小倍率投影於 前述基板上。 47. 如申請專利範圍第46項之曝光方法，係藉由使用 前述分束器以檢測於前述光罩上形成之對準標記與於前述 基板上形成之對準標記之兩者。 48. —種微元件之製造方法，係包含：使用申請專利範 圍第項29或30項之曝光方法來以前述光罩的圖案對前述 基板進行曝光。 49. 一種曝光方法，係以光罩上形成之圖案對基板進行 曝光；係包含： 使得前述光罩於既定面上移動； 使得前述基板移動於相對前述既定面爲大致垂直的面 上。 50. 如申請專利範圍第49項之曝光方法，其中，前述 _________ 8 ______________ (請先閩讀背面之注意事項再填寫本頁) ί 本紙張尺度逋用中國鬮家揉準（CNS ) Α4規格（210X297公釐） A8 B8 C8 D8 六、申請專利範圍 圖案係經由具既定倍率之投影光學系統投影於前述基板上 〇 (請先W讀背面之注意事項再填寫本頁) 51·如申請專利範圍第50項之曝光方法，其中，前述 投影光學系統係使得前述圖案的倒立像投影於前述基板上 〇 52·如申請專利範圍第50項之曝光方法，其中，前述 基板係藉由基板平台所移動，前述光罩係藉由光罩平台所 移動’該光罩平台具有(前述基板平台之質量^前述既定之 倍率)的質量。 53. 如申請專利範圍第50或52項之曝光方法，其中* 前述光罩與前述基板係以對應於前述既定倍率之速度比同 步移動。 54. 如申請專利範圍第49項之曝光方法，其中，前述 光罩在前述既定面上係移動於既定方向上，前述基板係與 前述光罩之移動同步，而在與前述既定面爲垂直的面上移 動於與前述既定方向爲相反方向上。 經濟部智慧財產局員工涓費合作社印製 55. 如申請專利範圍第55項之曝光方法，其中，前述 光罩平台與前述基板平台係於基座構件上被支撐成浮動狀 態。 56. 如申請專利範圍第50項之曝光方法，其中，前述 投影光學系統係包含複數之透過光學元件、分束器、反射 光學元件，使得前述光罩之圖案以既定的縮小倍率投影於 前述基板上。 57. 如申請專利範圍第56項之曝光方法，係藉由使用 __9_ 本紙张尺度逋用中囷國家標率（CNS ) A4現格（210X297公釐） 經濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 前述分束器以檢測於前述光罩上形成之對準標記與於前述 基板上形成之對準標記之兩者。 58. 如申請專利範圍第52項之曝光方法，係藉由致動 設於前述光罩平台與前述基板平台間之電磁式運動構件來 使前述光罩與前述基板同步移動。 59. —種微元件之製造方法，係包含：使用申請專利範 圍第49〜52項以及54〜S8項中任一項之曝光方法，以前述 光罩上形成的圖案對前述基板進行曝光。 60. —種曝光方法，係將於光罩上形成之圖案以具既定 之投影倍率之投影光學系統投影於基板上來對基板進行曝 光；其中，係包含： 使得配置於前述投影光學系統之一側的光罩於既定的 方向移動； 使得相對於前述投影光學系統配置於與前述一側爲同 側之基板，與該光罩之移動同步移動於與前述既定方向爲 相反方向。 61. 如申請專利範圍第6G項之曝光方法，其中，前述 投影光學系統係使得前述圖案之倒立像投影於前述基板上 〇 62. 如申請專利範圍第60項之曝光方法，其中，前述 基板係藉由基板平台所移動，前述光罩係藉由光罩平台所 移動，該光罩平台具有(基板平台之質量X前述既定之倍率 倍)的質量。 63. 如申請專利範圍第62項之曝光方法，其中，前述 10 _ ___________ n ^^1 n --1 I I ϋ n I: Jn 1^1 c (请先wi*背面之注意?項再填寫本頁) 本紙浪尺度適用中爾B家標率（CNS > A4規格（210X297公釐） 經濟部智慧財底局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 光罩平台與前述基板平台係於基座構件上被支撐成浮動狀 態。 64. 如申請專利範圍第62項之曝光方法，係藉由致動 設於前述光罩平台與前述基板平台間之電磁式運動構件使 得前述光罩與前述基板同步移動。 65. 如申請專利範圍第60項之曝光方法，係藉由照明 光照明前述光罩|並使得通過該光罩之光經由前述投影光 學系統引導至前述基板上，以將前述圖案投影於前述基板 上。 66. 如申請專利範圍第65項之曝光方法，其中，前述 光罩係載置於被支撐在基座構件上之光罩平台，前述照明 光自相對於前述基座構件爲與前述光罩平台之相反側照明 前述光罩。 67. 如申請專利範圍第60項之曝光方法，其中，前述 光罩平台與前述基板平台係以對應於前述既定倍率的速度 比同步移動。 68. —種微元件之製造方法，係包含：使用申請專利範 圍第60〜67項中任一項之曝光方法，以前述光罩上形成的 圖案對前述基板進行曝光。 69. —種曝光方法，係以形成於光罩上之圖案對基板進 行曝光：其中，係包含： 使得前述光罩移動於既定面上； 使得前述基板移動於與前述既定面爲大致同一面上。 70. 如申請專利範圍第69項之曝光方法，其中，前述 _Π 本紙張尺度適用中國國家梂準（CNS ) A4说格（210X297公釐） pi^i —^n ^^^1 ^^^1 ί- II nn .^n I— 1^^1- ^^^1 _ - ^^^1 n^— (請先M讀背面之注意事項再填寫本頁) 經濟部智慧財產局R工消費合作社印製 ί 6 籩 II D8 六、申請專利範圍 圖案係經由既定倍率之投影光學系統曝光於基板上。 71. 如申請專利範圍第70項之曝光方法，其中，前述 投影光學系統係使得前述圖案的倒立像投影於前述基板上 〇 72. 如申請專利範圍第70項之曝光方法，其中，前述 基板係藉由基板平台所移動，前述光罩係藉由光罩平台所 移動，該光罩平台具有(前述基板平台之質量χ前述既定之 倍率倍)的質量。 73. 如申請專利範圍第72項之曝光方法，其中，前述 一側之平台係跨設於另一側之平台上。 74. 如申請專利範圍第70項之曝光方法，其中，前述 光罩與前述基板係以對應於前述既定倍率的速度比同步移 動。 75. 如申請專利範圍第72項之曝光方法，其中，前述 光罩平台與前述基板平台係於基座構件上浮動的狀態下受 到支撐。 76. 如申請專利範圍第72項之曝光方法，係藉由致動 設於前述光罩平台與前述基板平台間之電磁式運動構件使 得前述光罩與前述基板同步移動。 77. 如申請專利範圍第69項之曝光方法，其中，前述 光罩係載置於支撐在基座構件上之光罩平台上，前述光罩 係相對於前述基座構件自與前述光罩平台之相反側受到照 明。 78. —種微元件之製造方法，係使用申請專利範圍第 _12 本紙張尺度適用中國國家標準（CNS ) Α4说格（210Χ297公釐） ---------装-------*—^訂 (請先Η讀背面之注意事項再填寫本頁) 經濟部智总財-^負工消費合作社印^ 六、申請專利範圍 69〜77項中任一項之曝光方法，以將前述光罩的圖案曝光 於前述基板上。 79. —種曝光裝置，係以光罩之圖案對基板進行曝光， 其中，係包含： 一光罩平台，其載置於光罩上； 一基板平台，其載置於基板上； 一驅動系統' 其使得則述光卓平台與基板平台之一移 動於既定之方向上，爲減低伴隨該平台的移動所產生的力 ，乃使得另一平台於與該平台同步移動時移動於與該既定 方向爲相反的方向上。 80. —種曝光裝置，係以光罩之圖案對基板進行曝光； 其中，係包含： 一光罩平台，其載置於光罩上； 一基板平台，其載置於基板上； 一驅動構件，其配置於前述光罩平台與前述基板平台 之間’係使得一平台移動於既定方向上，並使得另一平台 與該平台移動同步般移動於與該既定方向爲相反方向上。 81. 如申請專利範圍第79項之曝光裝置，其中，前述 驅動系統係包含g又於目丨』述兩平台間之驅動構件，藉由驅動 該驅動構件，使得前述一平台移動於既定方向上，並使得 前述另一平台與該平台移動同步般移動於與該既定方向爲 相反方向上。 82·如申請專利範圍第79或80項之曝光裝置，係再包 a—投影光學系統’其設於前述光罩平台與前述基板平台 13 (請先M讀背面之注意事項再填寫本頁) 衣紙張又度逍用中國國家標率（CNS ) Α4規格（210X297公釐） 4 344 1 ABCD 六、申請專利範圍 之間，係使得前述圖案以既定倍率投影於前述基板上。 83. 如申請專利範圍第82項之曝光裝置，其中，前述 光罩平台係具有（前述基板平台之質量X前述既定倍率）的 質量。 84. 如申請專利範圍第79或80項之曝光裝置，係再包 含： 設置一基座構件以支撐前述光罩平台與前述基板平台 於前述光罩平台以及前述基座平台之間、以及於前述 基板平台與前述基座構件之間，分別設置浮動支撐構件使 得光罩平台以及基座平台分別在該基座構件上於浮動的狀 態下受到支撐。 85. 如申請專利範圍第82項之曝光裝置，其中，前述 光罩平台與前述基板平台係以對應於前述既定倍率的速度 比同步移動。 86. 如申請專利範圍第85項之曝光裝置，係再包含一 調整裝置，其與前述光罩平台及基板平台之至少一方電聯 接著，用以調整前述光罩平台及基板平台於同步移動時之 速度比。 87. 如申請專利範圍第81項之曝光裝置，其中，前述 驅動構件係線性馬達。 88. 如申請專利範圍第82項之曝光裝置，其中，前述 投影光學系統係包含複數之透過光學元件、分束器、反射 光學元件。 ----------表--------^訂------泉 {請先閱讀背面之注意事項再填寫本頁) 衣紙法尺度適用中國國家標华（CNS )八4说格（2t0x2<i>7公釐） 經濟部智总財ΛΜ工合作钍印餐 344 1 b« D8 六、申請專利範圍 89. 如申請專利範圍第88項之曝光裝置，係再包含一 對準系統，其經由前述分割器檢測出於前述光罩上形成之 對準標記與於前述基板上形成之對準標記。 90. —種微元件，係經利用如申請專利範圍第79或80 項之曝光裝置將前述光罩上之圖案複製至前述基板上所製 造者。 ' 91.一種曝光裝置，係以形成於光罩上之圖案對基板進 行曝光；其中，係包含： 一光罩平台，係使得前述光罩移動於既定面上； 一基板平台，係使得前述基板移動於相對前述既定面 爲大致垂直的面上。 92. 如申請專利範圍第91項之曝光裝置，係再包含一 投影光學系統1其設於前述光罩平台與前述基板平台之間 ，係使得該圖案以既定倍率投影於前述基板上。 93. 如申請專利範圍第92項之曝光裝置，其中，前述 投影光學系統係使得前述光罩上之圖案的倒立像投影於前 述基板上。 94. 如申請專利範圍第92項之曝光裝置，其中，前述 光罩平台係具有（前述基板平台之質量X前述既定倍率）的 質量。 95. 如申請專利範圍第92或94項之曝光裝置，其中， 前述光罩與前述基板係以對應於前述既定倍率的速度比同 步移動。 96. 如申請專利範圍第91項之曝光裝置，其中，前述 ^^1 - - -I — - ---- - - -- D ^^^1 I - . - - - - - Hr— ----I (請先閱讀背面之注意事項再填寫本頁) 木紙張尺度適用中國國家梯準（CNS > A4現格（210X297公釐） 434416« 8 8 8 8 ABCD 六、申請專利範圍 光罩於前述既定面內移動於既定方向上，前述基板與前述 光罩之移動同步，在前述垂直之面內移動於與前述既定方 向爲相反方向上。 97. —種微元件，係經利用申請專利範圍第91〜94以及 96項中任一項之曝光裝置將前述光罩上之圖案複製至前述 基板上所製造者。 98. —種曝光裝置，係以光罩之圖案對基板進行曝光； 其中，係包含： 一投影光學系統，其具有既定之投影倍率； 一光罩平台，其用以載置前述光罩，係配置在相對於 前述投影光學系統之一側； 一基板平台，其用以載置前述基板，係配置在相對於 前述投影光學系統之配置有前述光罩平台之前述一側。 99. 如申請專利範圍第98項之曝光裝置，其中，前述 投影光學系統係使得前述光罩上圖案的倒立像投影於前述 基板上。 100. 如申請專利範圍第98項之曝光裝置，其中，前述 光罩平台係具有(前述基板平台之質量X前述既定投影倍率 )的質量。 101. 如申請專利範圍第98項之曝光裝置之製造方法， 係再設置一照明光源以產生對前述光罩進行照明的照明光 ，前述照明光透過該光罩之後，乃經由前述投影光學系統 被引導至前述基板上，以使得前述圖案投影至前述基板上 來進行基板的曝光。 16 衣紙張尺度適用令國國家標牟（CNS ) A4規格（2丨0X297公釐了 I In— ! - I 1- ill - - - 1^1^1 i j j:· -rl— »__一心 _ u「.___- (請先閲讀背面之注意事項再填寫本頁) 434416¾ 8 8 8 8 ABCD 六、申請專利把圍 102. 如申請專利範園第101項之曝光裝置，係再包含 一基座構件以支撐前述光罩平台；前述照明光源係配置在 相對於前述基座構件爲與前述光罩平台之相反側。 103. 如申請專利範圍第98項之曝光裝置，其中，前述 光罩平台與前述基板平台係以對應於前述既定投影倍率的 速度比同步移動。 104. —種微元件，係經利用申請專利範圍第98〜103項 中任一項之曝光裝置將前述光罩上的圖案複製至前述基板 上所製造者。 105. —種曝光裝置，係以形成於光罩上之圖案對基板 進行曝光；其中，係包含： 一光罩平台，係使得前述光罩移動於既定面上； 一基板平台，係使得前述基板移動於與前述既定面大 致同一面上。 106. 如申請專利範圍第105項之曝光裝置，係再包含 一投影光學系統，就光學上來看其設於前述光罩與前述基 板之間，係使得前述圖案以既定倍率投影於前述基板上。 107. 如申請專利範圍第106項之曝光裝置，其中，前 述投影光學系統係使得前述光罩上之圖案的倒立像投影於 前述基板上。 108. 如申請專利範圍第106項之曝光裝置，其中，前 述光罩平台係具有（前述基板平台之質量X前述既定倍率) 的質量。 109. 如申請專利範圍第108項之曝光裝置，其中，前 Π 农紙張义度適用中國國家搮隼（CNS ) A4規格（2丨0X29?公釐） (請先鬩讀背面之注意事項再填寫本頁) ST 泉 344 16¾ SS C8 D8 t、申請專利範圍 述光罩平台係跨設於前述基板平台上。 110. 如申請專利範圍第106項之曝光裝置，其中，前 述光罩平台與前述基板平台係以對應於前述既定倍率的速 度比同步移動。 111. —種微元件，係經利用申請專利範圍第106M10 項中任一項之曝光裝置將前述光罩上的圖案複製至前述基 板上所製造者。 ---- -=---I In - - - - - - - I :农 - -------------- : :*—^In n -.- _ Hi . (請先閲讀背面之注意事項再填寫本頁) 經"部智慧"是局貸工消费合作社印聚 13 本紙張尺度邊用申國國家棵準（CNS ) A4現格（210X297公釐）Printed by employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Cooperative Co., Ltd. 6. Patent application, an exposure device that continuously moves the photomask and substrate synchronously, and copies the pattern formed on the photomask to the aforementioned via the projection optical system The substrate is characterized by having a substrate platform floatingly supported on the base member, having a mass of the substrate platform multiplied by a reduction magnification of the projection optical system, and a photomask floatingly supported on the base member. A platform, and a first driving member which is disposed between the two platforms and drives the substrate platform and the photomask platform so that the photomask and the substrate move in opposite directions to each other. 2. The exposure device according to item 1 of the patent application scope, wherein: the projection optical system is an optical system that projects an inverted image of a pattern formed on the photomask onto the substrate. 3. For the exposure device according to item 1 or 2 of the scope of patent application, wherein: the substrate is horizontally held on the substrate platform, and the photomask is vertically held on the photomask platform, and the aforementioned projection optical system is It includes a plurality of transmission optical elements, beam splitters, and reflective optical elements, and the pattern of the aforementioned mask arranged on the object surface is projected onto the aforementioned substrate arranged on the imaging surface at a predetermined reduction ratio. The exposure device of item 3, wherein: It further includes: a semi-TTL alignment detection system capable of detecting the alignment mark formed on the photomask and the alignment mark on the substrate via the beam splitter. The exposure device of the first item, wherein: the photo paper size is selected between the aforementioned base member and the aforementioned photomask platform to drive the Chinese paper size (CNS) (21〇 > ^ 7mm)- --- r ----- Shimu ----------: iT (please read the note on the back first and then fill out this page) Do 3 仏 '6®?! D8 Ministry of Economy Wisdom Printed by the Consumer Property Cooperative of the Property Bureau, and applied for a patent scope platform 2nd drive member. 6. The exposure apparatus according to item 5 of the patent application scope, wherein: a third driving member for driving the substrate platform is provided between the base member and the substrate platform. 7. The exposure device according to item 6 of the patent application, wherein: at least one of the second driving member and the third driving member is provided with a regenerative braking control circuit to synchronously move the two flat platforms by the first driving member. The speed ratio is slightly adjusted. 8. The exposure apparatus according to any one of the claims 1, 5, 6, and 7, in which: the substrate platform has a first platform driven in a first direction synchronized with the movement of the substrate, And a second stage that holds the substrate and is integrated with the first stage and moves in the first direction and is guided by the first stage and is movable in a second direction that is perpendicular to the first direction. 9. For the exposure device under the scope of patent application item 1, in which: the aforementioned substrate platform is floatingly supported on the base member via an air bearing, please bind it. 10. For the exposure device in the scope of patent application item 1, where : The aforementioned mask platform is floatingly supported on the base member via an air bearing. 11. A scanning exposure device provided with a projection optical system having optical axes substantially perpendicular to the mask and the substrate, respectively, and passing through the aforementioned projection optics. The system copies the pattern of the aforementioned photomask to the aforementioned substrate scanning, which is characterized by: _ 2_ This paper size is applicable to China B family standard rate (CNS) A4 specification (210X297 mm) D8 D8 Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer cooperation Du Yinu VI. Patent application base; the first platform for moving the photomask on the base; the second platform for moving the substrate on the base; and in order to support the projection optical system Speed ratio to simultaneously move the photomask and the substrate, and the drive system connected to the first platform and the second platform The drive system drives the first platform and the second platform in a predetermined direction in a reverse direction so that the reaction forces generated by the synchronous movements substantially cancel each other. 12. The scanning exposure device according to item 11 of the scope of patent application, wherein: the mass ratio of the first stage to the second stage is set to be approximately the same as the reduction ratio of the projection optical system. 13. The scanning exposure device according to the 11th or 12th of the scope of the patent application, wherein: The aforementioned projection optical system includes a refractive optical element and at least one reflective optical element; and it can reduce the inverted image of a part of the pattern of the aforementioned mask. An optical system projected onto the substrate. 14. The scanning exposure device according to the 11th or Π of the patent application scope, wherein: the aforementioned projection optical system includes at least two reflective optical elements; and the image plane of the aforementioned projection optical system is arranged on the object surface side. 15. The scanning exposure device according to item 13 of the application, wherein: the reflective optical element of the projection optical system includes at least one of a reflective mirror, a concave mirror, and a beam splitter. _____3____ Applicable in the standard of this paper® National Standards (CNS > A4 grid (2 丨 〇 > < 297 mm) — ^ 1 * ^^ 1 -1-1 · HI m ^^ 1 ^^ 1 HI . · * ^ Fit ^^ 1 ^^ 1. Ge] I --- ¾. (Please read the note on the back before filling in this page) ABicD Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 16. The scanning exposure device according to item I4 of the scope of patent application, wherein: the aforementioned reflective optical element of the aforementioned projection optical system includes at least one of a reflector, a concave mirror, and a beam splitter ~ 17. If the scope of patent application is item 11 The scanning exposure device, wherein: the object surface and the image surface of the projection optical system are arranged in the same plane, and the first and second platforms are moved along the plane with the photomask and the substrate, respectively. The scanning exposure device according to item 14 of the patent application scope, wherein: the object surface and the image surface of the projection optical system are arranged in the same plane, and the first and second platforms are respectively along the plane with the photomask and the substrate And move. For example, the scanning exposure of item (2) of the scope of patent application It has: an illumination system which is arranged opposite to the aforementioned projection optical system and irradiates the aforementioned photomask with a light beam relative to the aforementioned base. 20. The scanning exposure device according to item Π of the patent application scope, wherein: It further has an illumination system which is disposed on the opposite side of the projection optical system and irradiates the photomask with a light beam relative to the base. 21. The scanning exposure device according to item 1S of the patent application scope, wherein: An illumination system disposed on the opposite side of the base from the projection optical system and irradiating the photomask with a light beam. 22. A scanning exposure method in which a pattern of a photomask is copied to a substrate through the projection optical system, which It is characterized in that: the photomask and the substrate are arranged in the same plane perpendicular to the optical axis of the projection optical system, and ^^ 1 m ^^^ 1 In ^^ 1 1 ^^ 1---I ^^^ 1 (Please read the precautions on the back before filling this page) This paper size uses China National #Car (CNS) Α4 Specification (2 丨 〇 < 297 mm) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs for consumer cooperation 7T. The patent application encloses projecting a part of the inverted image of the pattern of the mask onto the substrate, so that the mask and the substrate move synchronously in a reverse direction along a predetermined direction on the plane, thereby enabling the synchronization by the aforementioned synchronization. The reaction forces generated by the movements generally cancel each other out. 23. For example, the scanning exposure method of item 22 of the scope of the patent application, wherein: the aforementioned photomask and the aforementioned substrate move synchronously at a speed ratio corresponding to the magnification of the aforementioned projection optical system. 24 For example, the scanning exposure method of the 22nd or 23rd of the patent application scope, wherein: in order to align the pattern of the aforementioned photomask to the pattern on the substrate and copy it, adjust the aforementioned photomask and the aforementioned image during the synchronous movement. The speed ratio of the substrate is corrected by at least one of a magnification error and a distortion error of the pattern on the substrate and the pattern image of the photomask. 25. The exposure apparatus according to any one of claims 1, 5, 6, and 7, wherein the aforementioned driving member is driven by an electromagnetic action. 26. The exposure apparatus according to claim 25, wherein the driving member includes a linear motor. 27 · —A kind of micro-device, which is made by copying the pattern on the aforementioned photomask to the aforementioned substrate by using the exposure device of the patent application scope item 1 or 11. 28. A method for manufacturing a micro-device, comprising: exposing the substrate with a pattern on the mask using an exposure method according to item 22 of the patent application. 29. —A kind of exposure method 'is a photo of a photomask placed on a photomask platform— "__ This paper is based on the Chinese" JIAJUN (CNS) A4 "(210 x 297 mm) I— .-II-1. I- ------·-!-. (Please read the notes on the back before filling in this education.) Where is 3 '6' B8 C8 D8 Consumption by the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the cooperative 6. The scope of the patent application exposes the substrate placed on the substrate platform. Among them, one of the photomask platform and the substrate platform is moved in a predetermined direction; in order to reduce the force accompanying the movement of the platform, The other platform moves in synchronization with the movement of the platform in a direction opposite to the predetermined direction. 30. An exposure method that exposes a substrate mounted on a substrate platform with a pattern of a mask mounted on a mask platform; wherein the method includes actuating a substrate provided on the mask platform and the substrate platform The driving members between them make one platform move in a predetermined direction, while the other platform moves in the opposite direction to the predetermined direction in synchronization with the movement of the platform. 31. The exposure method according to item 29 of the scope of patent application, wherein the movement of the photomask platform and the substrate platform is performed by actuating a driving member provided between the two platforms; a platform is moved in a predetermined direction At the same time, the other platform moves in a direction opposite to the predetermined direction in synchronization with the movement of the platform. 32. The exposure method according to item 29 or 30 of the patent application scope, wherein the pattern is projected on the substrate at a predetermined magnification by a projection optical system. 33. For the exposure method according to item 32 of the patent application, wherein the aforementioned photomask platform has a mass of (the mass of the aforementioned substrate platform X the aforementioned magnification) 34. For the exposure method according to item 32 of the patent application, wherein the foregoing The projection optical system projects an inverted image of the pattern of the photomask onto the substrate. I: ^^ 1 m HI. — ^ N ^^ 1 ^ 44 ^ -5. (Please read the precautions on the back before filling out this page) The paper size applies to the Chinese Standard (CNS) A < * wash grid (210X297 mm) 43¾¾ 1 6 ^ .1 μ8 C8 I-— _ P8 / 、, claiming patent scope 35. For the exposure method of the scope of patent application No. 31, wherein the aforementioned photomask platform and the aforementioned substrate platform are in The base member is supported in a floating shape. 36. The exposure method according to item 35 of the scope of patent application, wherein the photomask platform and the substrate platform are supported in a floating state on a base member via an air bearing. 37. The exposure method according to item 36 of the application, wherein the aforementioned air bearing is a vacuum preload type air bearing. 38. The exposure method according to item 32 of the application, wherein the mask stage and the substrate stage are moved synchronously at a speed ratio corresponding to the magnification of the projection optical system. For example, the exposure method in the 38th aspect of the patent application, in the synchronous movement of the photomask platform and the substrate platform, includes the operation of adjusting the aforementioned speed ratio. 40. The exposure method according to item 4 or 30 of the patent application, wherein the photomask platform moves the photomask on a predetermined surface, and the substrate platform moves the substrate on a surface that is substantially perpendicular to the predetermined surface. on. 41. If the exposure method according to item 32 of the patent application scope, wherein the mask stage is such that the mask is moved on a plane perpendicular to the optical axis of the projection optical system, the substrate stage is such that the substrate is moved In a plane substantially the same as this plane. 42. The exposure method according to item 35 of the scope of patent application, wherein the second driving member provided between the base member and the photomask platform is used. _ 7_ ) M specifications (2 丨 0X297mm) I installed --- {Please read the precautions on the back before filling this page) --iT Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs Consumer Cooperatives Λ8 B8 C8 D8 Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau ’s Consumer Cooperatives 6. Applying for patents and driving the photomask platform by electromagnetic action. 43. The exposure method according to item 35 or 42 of the scope of patent application, wherein a second driving member provided between the base member and the substrate platform is used to drive the substrate platform by electromagnetic action. 44. The exposure method according to claim 30 or 31, wherein the driving member drives the platform by electromagnetic action. 45. The exposure method according to item 44 of the patent application, wherein the driving member includes a linear motor. 46. The exposure method according to item 32 of the patent application scope, wherein the aforementioned projection optical system includes a plurality of transmission optical elements, beam splitters, and reflective optical elements, so that the aforementioned mask pattern is projected onto the aforementioned substrate at a predetermined reduction ratio. on. 47. The exposure method according to item 46 of the scope of patent application is to detect both the alignment mark formed on the aforementioned photomask and the alignment mark formed on the aforementioned substrate by using the aforementioned beam splitter. 48. A method of manufacturing a micro-device, comprising: exposing the substrate with a pattern of the mask using an exposure method in the scope of item 29 or 30 of the patent application. 49. An exposure method that exposes a substrate with a pattern formed on a photomask; comprising: moving the photomask on a predetermined surface; and moving the substrate on a surface that is substantially perpendicular to the predetermined surface. 50. For the exposure method in item 49 of the scope of patent application, in which the aforementioned _________ 8 ______________ (please read the precautions on the reverse side before filling out this page) ί This paper size uses the China National Standard (CNS) Α4 specification (210X297 mm) A8 B8 C8 D8 VI. The scope of the patent application is projected on the aforementioned substrate through a projection optical system with a predetermined magnification. (Please read the precautions on the back before filling out this page) 51. If the scope of patent application The exposure method according to item 50, wherein the projection optical system is such that the inverted image of the pattern is projected on the substrate. 52. The exposure method according to item 50 of the patent application scope, wherein the substrate is moved by a substrate platform. The aforementioned photomask is moved by the photomask platform. The photomask platform has a mass of (the mass of the aforementioned substrate platform ^ the aforementioned predetermined magnification). 53. For the exposure method according to the 50th or 52th of the scope of patent application, wherein * the aforementioned mask and the aforementioned substrate are moved synchronously at a speed ratio corresponding to the aforementioned predetermined magnification. 54. For the exposure method according to item 49 of the application, wherein the photomask is moved in a predetermined direction on the predetermined surface, the substrate is synchronized with the movement of the photomask, and is perpendicular to the predetermined surface. The surface moves in a direction opposite to the predetermined direction. Printed by the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs. 55. For the exposure method under the scope of patent application No. 55, wherein the aforementioned photomask platform and the aforementioned substrate platform are supported on a base member in a floating state. 56. For example, the exposure method of the 50th aspect of the patent application, wherein the aforementioned projection optical system includes a plurality of transmission optical elements, beam splitters, and reflective optical elements, so that the pattern of the aforementioned photomask is projected on the aforementioned substrate at a predetermined reduction ratio. on. 57. For the exposure method of item 56 in the scope of patent application, it is printed by using the __9_ paper standard in China's National Standards (CNS) A4 (210X297 mm) printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application The aforementioned beam splitter detects both the alignment mark formed on the aforementioned photomask and the alignment mark formed on the aforementioned substrate. 58. For the exposure method of the 52nd scope of the patent application, the photomask and the substrate are moved synchronously by actuating an electromagnetic moving member provided between the photomask platform and the substrate platform. 59. A method of manufacturing a micro-device, comprising: exposing the substrate with a pattern formed on the photomask using an exposure method in any of the patent application scopes 49 to 52 and 54 to S8. 60. — An exposure method, which exposes a pattern formed on a reticle onto a substrate by projecting a projection optical system with a predetermined projection magnification on the substrate; wherein, it includes: making it disposed on one side of the aforementioned projection optical system The photomask is moved in a predetermined direction, so that the substrate disposed on the same side as the one side of the projection optical system is moved in a direction opposite to the predetermined direction in synchronization with the movement of the photomask. 61. For example, the exposure method of item 6G of the patent application range, wherein the aforementioned projection optical system is such that an inverted image of the aforementioned pattern is projected on the substrate. 62. For example, the exposure method of the item 60 of the patent application range, wherein the aforementioned substrate system The photomask is moved by the substrate platform, and the photomask platform has a mass of (the mass of the substrate platform X the aforementioned predetermined magnification factor). 63. If you apply for the exposure method of item 62 in the scope of patent application, where the aforementioned 10 _ ___________ n ^^ 1 n --1 II ϋ n I: Jn 1 ^ 1 c (Page) This paper's standard is applicable to China B standard (CNS > A4 size (210X297mm). Printed by A8, B8, C8, D8, and Consumer Cooperatives of the Ministry of Economy ’s Intelligent Finance Bureau. VI. Patent scope. Mask platform and the aforementioned substrate platform. It is supported on the base member in a floating state. 64. For the exposure method of the 62nd patent application scope, the aforementioned photomask is made by actuating an electromagnetic moving member provided between the aforementioned photomask platform and the aforementioned substrate platform. Synchronous movement with the aforementioned substrate. 65. The exposure method according to item 60 of the patent application scope is to illuminate the aforementioned mask with illumination light, and to guide the light passing through the mask onto the aforementioned substrate via the aforementioned projection optical system, so that The aforementioned pattern is projected on the aforementioned substrate. 66. The exposure method according to item 65 of the patent application scope, wherein the aforementioned photomask is placed on a photomask platform supported on a base member, and the aforementioned illumination light is relative to the aforementioned substrate. The component is to illuminate the photomask on the opposite side of the photomask platform. 67. For example, the exposure method of the 60th aspect of the patent application, wherein the photomask platform and the substrate platform move synchronously at a speed ratio corresponding to the predetermined magnification. 68. — A method for manufacturing a micro-device, comprising: using the exposure method of any one of claims 60 to 67 of the application for a patent to expose the substrate with a pattern formed on the aforementioned mask. 69. —exposure A method for exposing a substrate in a pattern formed on a photomask: wherein, the method includes: moving the photomask on a predetermined surface; making the substrate move on a substantially same surface as the predetermined surface. 70. If applied The exposure method of item 69 of the patent, in which the aforementioned _Π paper size is applicable to China National Standard (CNS) A4 grid (210X297 mm) pi ^ i — ^ n ^^^ 1 ^^^ 1 ί- II nn. ^ n I— 1 ^^ 1- ^^^ 1 _-^^^ 1 n ^ — (Please read the precautions on the back before filling out this page) Printed by R Industrial Consumer Cooperative, Bureau of Intellectual Property, Ministry of Economic Affairs ί 6 笾 II D8 VI. Patent Application A projection optical system of a predetermined magnification is exposed on a substrate. 71. The exposure method according to item 70 of the patent application scope, wherein the aforementioned projection optical system projects an inverted image of the aforementioned pattern onto the substrate. The exposure method of 70 items, wherein the substrate is moved by a substrate platform, and the photomask is moved by a photomask platform, and the photomask platform has a mass (the mass of the substrate platform x the predetermined magnification factor) . 73. The exposure method according to item 72 of the patent application scope, wherein the platform on one side is located on the platform on the other side. 74. The exposure method according to item 70 of the application, wherein the photomask and the substrate are moved synchronously at a speed ratio corresponding to the predetermined magnification. 75. The exposure method according to item 72 of the application, wherein the photomask platform and the substrate platform are supported in a floating state on a base member. 76. For the exposure method according to item 72 of the scope of patent application, the photomask and the substrate move synchronously by actuating an electromagnetic moving member provided between the photomask platform and the substrate platform. 77. The exposure method according to item 69 of the application, wherein the photomask is placed on a photomask platform supported on a base member, and the photomask is freely connected to the photomask platform with respect to the base member. The opposite side is illuminated. 78. —A kind of micro-component manufacturing method, which uses the scope of patent application _12 This paper size is applicable to the Chinese National Standard (CNS) A4 grid (210 × 297 mm) --------- installation ---- --- *-^ Order (please read the notes on the back before filling out this page) Printed by the Ministry of Economy and Intellectual Property-^ Printed by the Consumers' Cooperatives ^ VI. Exposure method for any one of the scope of patent applications 69 ~ 77 To expose the pattern of the photomask on the substrate. 79. An exposure device for exposing a substrate in a pattern of a photomask, which includes: a photomask platform mounted on the photomask; a substrate platform mounted on the substrate; a drive system '' It makes one of the light platform and the substrate platform move in a predetermined direction. In order to reduce the force generated by the movement of the platform, the other platform moves in the predetermined direction when moving in synchronization with the platform. For the opposite direction. 80. An exposure device for exposing a substrate in a pattern of a photomask; wherein, it comprises: a photomask platform, which is placed on the photomask; a substrate platform, which is placed on the substrate; a driving member It is arranged between the photomask platform and the substrate platform, so that one platform moves in a predetermined direction, and another platform moves in synchronization with the platform in a direction opposite to the predetermined direction. 81. For the exposure device under the scope of application for patent 79, wherein the aforementioned driving system includes a driving member between the two platforms described above, by driving the driving member, the aforementioned platform moves in a predetermined direction. And cause the aforementioned another platform to move in synchronization with the movement of the platform in a direction opposite to the predetermined direction. 82 · If the exposure device with the scope of patent application No. 79 or 80 is applied, it is a package of a-projection optical system, which is located on the aforementioned mask platform and the aforementioned substrate platform 13 (please read the precautions on the back before filling this page) The clothing and paper use the Chinese National Standard (CNS) A4 specification (210X297 mm) 4 344 1 ABCD 6. Between the scope of patent application, the aforementioned pattern is projected on the aforementioned substrate at a predetermined magnification. 83. For the exposure device according to item 82 of the scope of patent application, wherein the aforementioned mask stage has a mass (the mass of the aforementioned substrate stage X the aforementioned predetermined magnification). 84. If the exposure device under the scope of patent application No. 79 or 80, it further comprises: providing a base member to support the photomask platform and the substrate platform between the photomask platform and the base platform, and between the photomask platform and the base platform, and Between the substrate platform and the aforementioned base member, floating support members are respectively provided so that the photomask platform and the base platform are respectively supported on the base member in a floating state. 85. For the exposure device according to item 82 of the application, wherein the mask stage and the substrate stage are moved synchronously at a speed ratio corresponding to the predetermined magnification. 86. If the exposure device under the scope of application for patent No. 85 further includes an adjustment device, which is electrically connected to at least one of the aforementioned photomask platform and the substrate platform, and is used to adjust the photomask platform and the substrate platform when they are moved synchronously. Speed ratio. 87. The exposure apparatus according to item 81 of the application, wherein the aforementioned driving member is a linear motor. 88. The exposure device according to item 82 of the application, wherein the aforementioned projection optical system includes a plurality of transmission optical elements, beam splitters, and reflection optical elements. ---------- Table -------- ^ Order ------ Quan {Please read the notes on the back before filling this page) The scale of the paper and paper method is applicable to China National Standards (CNS) Eight-fourth grid (2t0x2 < i > 7mm) Ministry of Economic Affairs, Intellectual Property Office, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, Japan, etc. 344 1 b «D8 VI. Patent Application 89. If you apply for the exposure device of the 88th patent scope, The system further includes an alignment system, which detects the alignment mark formed on the photomask and the alignment mark formed on the substrate via the divider. 90. — A micro-device manufactured by copying the pattern on the aforementioned photomask to the aforementioned substrate by using an exposure device such as item 79 or 80 of the patent application scope. '91. An exposure device for exposing a substrate in a pattern formed on a photomask; wherein, it comprises: a photomask platform for moving the aforementioned photomask onto a predetermined surface; and a substrate platform for making the aforementioned substrate It moves on a surface that is substantially perpendicular to the predetermined surface. 92. For example, the exposure device according to item 91 of the patent application scope further comprises a projection optical system 1 disposed between the aforementioned mask platform and the aforementioned substrate platform, so that the pattern is projected on the aforementioned substrate at a predetermined magnification. 93. The exposure device according to item 92 of the application, wherein the aforementioned projection optical system projects an inverted image of the pattern on the aforementioned mask onto the aforementioned substrate. 94. For the exposure device according to item 92 of the application, wherein the aforementioned mask stage has a mass (the mass of the aforementioned substrate stage X the aforementioned predetermined magnification). 95. For the exposure device according to claim 92 or 94, wherein the photomask and the substrate are moved synchronously at a speed ratio corresponding to the predetermined magnification. 96. For the exposure device according to item 91 of the application, wherein the aforementioned ^^ 1---I —--------D ^^^ 1 I-.-----Hr—- --I (Please read the precautions on the back before filling this page) Wood paper scale is applicable to China National Standards (CNS > A4 now (210X297 mm) 434416 «8 8 8 8 ABCD VI. Patent Application Mask Move in the predetermined direction in the predetermined plane, the substrate is synchronized with the movement of the mask, and move in the vertical plane in the direction opposite to the predetermined direction. 97. — a kind of micro-device, which is applied for patent The exposure device of any one of the items 91 to 94 and 96 copies the pattern on the aforementioned photomask to the manufacturer on the aforementioned substrate. 98. An exposure device for exposing the substrate with the pattern of the photomask; The system includes: a projection optical system having a predetermined projection magnification; a photomask platform for placing the aforementioned photomask arranged on a side opposite to the aforementioned projection optical system; a substrate platform for The substrate is placed on the substrate with respect to the substrate. The optical system is provided with the aforementioned side of the aforementioned mask platform. 99. The exposure device according to item 98 of the patent application scope, wherein the aforementioned projection optical system projects an inverted image of the pattern on the aforementioned mask onto the aforementioned substrate. 100 For example, the exposure device of the scope of application of the patent No. 98, wherein the aforementioned mask stage has a quality of (the mass of the aforementioned substrate platform X the aforementioned predetermined projection magnification). 101. The manufacturing method of the exposure system of the scope of the patent No. 98 An illumination light source is further provided to generate illumination light for illuminating the photomask. After the illumination light passes through the photomask, it is guided to the substrate through the projection optical system so that the pattern is projected onto the substrate. Expose the substrate. 16 The size of the paper is applicable to the national standard (CNS) A4 specification (2 丨 0X297 mm I In—!-I 1- ill---1 ^ 1 ^ 1 ijj: · -rl— »__ 一心 _ u「 .___- (Please read the notes on the back before filling in this page) 434416¾ 8 8 8 8 ABCD VI. Apply for a patent encirclement 102. For example, if you apply for the exposure of the 101st patent park The device further includes a base member to support the photomask platform; the illumination light source is arranged on the opposite side of the photomask platform relative to the base member. 103. An exposure device as claimed in item 98 of the scope of patent application Among them, the aforementioned photomask platform and the aforementioned substrate platform move synchronously at a speed ratio corresponding to the aforementioned predetermined projection magnification. 104. —A kind of micro-device, which is an exposure device using any one of the scope of applications of the patent from 98 to 103 The pattern on the photomask is copied to the manufacturer on the substrate. 105. An exposure device for exposing a substrate in a pattern formed on a photomask; wherein, it includes: a photomask platform for moving the aforementioned photomask on a predetermined surface; a substrate platform for making the aforementioned substrate It moves on the substantially same plane as the said predetermined plane. 106. For example, the exposure device under the scope of application of the patent No. 105 further includes a projection optical system, which is located between the aforementioned mask and the aforementioned substrate optically, so that the aforementioned pattern is projected on the aforementioned substrate at a predetermined magnification. 107. The exposure device according to item 106 of the patent application, wherein the aforementioned projection optical system projects an inverted image of a pattern on the aforementioned photomask onto the aforementioned substrate. 108. For the exposure device according to item 106 of the application, wherein the photomask stage has a mass (the mass of the aforementioned substrate stage x the aforementioned predetermined magnification). 109. For the exposure device under the scope of application for patent No. 108, in which the meaning of the front Π agricultural paper is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X29? Mm) (Please read the notes on the back before filling in This page) ST Spring 344 16¾ SS C8 D8 t. The photomask platform described in the scope of patent application is located on the aforementioned substrate platform. 110. For the exposure device according to item 106 of the application, wherein the photomask stage and the substrate stage move synchronously at a speed ratio corresponding to the predetermined magnification. 111. A micro-device, which is made by copying the pattern on the aforementioned photomask to the aforementioned substrate by using an exposure device in any one of the 106M10 patent scopes. -----= --- I In--------I: Agriculture---------------:: *-^ In n -.- _ Hi. ( Please read the notes on the back before filling out this page) The "Ministry of Wisdom" is printed by the Bureau of Loan Workers Consumer Cooperatives 13 This paper is scaled to the national standard of China (CNS) A4 (210X297 mm)
TW086114058A 1996-05-23 1997-09-26 Exposure device, scanning exposure device and scanning exposure method TW434416B (en)

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TWI454859B (en) * 2006-03-30 2014-10-01 尼康股份有限公司 Mobile device, exposure device and exposure method, and component manufacturing method
CN109941002A (en) * 2019-04-02 2019-06-28 广东工业大学 A kind of mini-printer

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TW448487B (en) 1997-11-22 2001-08-01 Nippon Kogaku Kk Exposure apparatus, exposure method and manufacturing method of device
CA2321070C (en) 1998-02-23 2010-04-06 Wisconsin Alumni Research Foundation Method and apparatus for synthesis of arrays of dna probes
TWI242113B (en) * 1998-07-17 2005-10-21 Asml Netherlands Bv Positioning device and lithographic projection apparatus comprising such a device
US6144118A (en) * 1998-09-18 2000-11-07 General Scanning, Inc. High-speed precision positioning apparatus
DE10019226B4 (en) * 2000-04-18 2010-03-18 Physik Instrumente (Pi) Gmbh & Co Electromechanical linear actuator with torque compensation
JP2005019562A (en) 2003-06-24 2005-01-20 Hitachi Ltd Cooling structure of electronic apparatus
JP2009258389A (en) * 2008-04-16 2009-11-05 Canon Inc Image blur correction apparatus, imaging apparatus and optical apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454859B (en) * 2006-03-30 2014-10-01 尼康股份有限公司 Mobile device, exposure device and exposure method, and component manufacturing method
CN109941002A (en) * 2019-04-02 2019-06-28 广东工业大学 A kind of mini-printer

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