4340 9 1 A7 B7 五、發明説明（i ) 發明範疇 本發明一般係關於半導體晶圓等工作件之研磨和抛 光，尤指半導體晶圓在化學和機械式拋光中所用拋光蟄和 方法。 發明背景 積體電路的生產，從創造高品質半導體晶圓開始°於 晶圓製造過程中，*晶圓要進行多次遮蔽、侵蝕介電質和導 電體定著製程。因爲此等積體電路生產中需要高精密度。 一般在半導體晶圓至少一側需要極平坦的表面，以確保要 在晶圓表面產生微電子結構的適當準確性和性能。隨積體 電路尺寸繼續減小，每積體電路的微結構密度增加*精密 晶圓表面的需要更形重要。所以，在各處理歩驟中間，往 往必須把晶圓表面抛光或磨平，而得盡可能平坦的表面。 化學機械磨平（CMP)方法和裝置的討論，可參見例如 Arai等人的美國專利4805348號（1989年2月發證）和 509 9614號（1 992年3月發證），Karlsrud等人的美國專 利53 2973 2號（1994年7月發證），Karlsrud的美國專利 5498 1 96號（1 996年3月發證），以及Karlsrud等人的美 國專利54981 99號（1996年3月發證）。 此項拋光是已知技術，一般包含把晶圓的一側附在晶 圓支架或夾頭的平坦表面，把晶圓的另1側緊壓在平坦拋 光表面。一般而言，拋光表面包括水平拋光墊，上面施加 漿液。拋光漿液可包含例如氧化铈、氧化鋁、發煙/沉澱 氧化矽等磨劑，或其他粒狀磨劑。拋光墊可由技術上已知 —1 — 本紙张尺度进州中闺1^家橾呤< rNS ) Λ4規格（210X 297公楚） I I ^^1 II »1 1 « tf -:- I^2- I (对先閱讀背而之注意事項再填寫本頁)4340 9 1 A7 B7 V. Description of the invention (i) Scope of the invention The present invention is generally related to the grinding and polishing of work pieces such as semiconductor wafers, especially polishing methods and methods used in chemical and mechanical polishing of semiconductor wafers. BACKGROUND OF THE INVENTION The production of integrated circuits begins with the creation of high-quality semiconductor wafers. During the wafer manufacturing process, * wafers are subjected to multiple shielding, erosion of dielectric and conductor-setting processes. Because high precision is required in the production of these integrated circuits. Generally, extremely flat surfaces are required on at least one side of a semiconductor wafer to ensure proper accuracy and performance of microelectronic structures on the wafer surface. As the size of integrated circuits continues to decrease, the density of microstructures per integrated circuit increases * The need for precision wafer surfaces becomes even more important. Therefore, in the middle of each processing step, the surface of the wafer must be polished or flattened to obtain a surface as flat as possible. For a discussion of chemical mechanical smoothing (CMP) methods and devices, see, for example, U.S. Patent Nos. 4,805,348 (issued in February 1989) and 509 9614 (issued in March 1,992) by Arai et al., Karlsrud et al. U.S. Patent No. 53 2973 2 (issued in July 1994), U.S. Patent No. 5498 1 96 (issued in March 1996), and U.S. Patent No. 54981 99 (issued in March 1996) by Karlsrud et al. ). This polishing is a known technique and generally involves attaching one side of the wafer to the flat surface of a wafer holder or chuck, and pressing the other side of the wafer against a flat polished surface. Generally, the polishing surface includes a horizontal polishing pad to which a slurry is applied. The polishing slurry may contain abrasives such as cerium oxide, alumina, fuming / precipitated silica, or other granular abrasives. The polishing pad can be known in the art—1— This paper scales into the state of China 1 ^ Home 橾 & < rNS) Λ4 size (210X 297 male Chu) II ^^ 1 II »1 1« tf-:-I ^ 2 -I (Please read the following precautions before filling out this page)
l^T -線’ 卜 4 3 4 Ο 9 1 Α7 Β7 五、發明説明（2 ) 且市上有售的各種材料形成。典型的抛光墊爲吹製聚肢 酯，諸如美國亞利桑那州史高塔市的Rodel產品公司產銷 的1C和GS系列拋光墊。抛光墊的硬度和密度，視所要 拋光的材料而定。 晶圓支架繞抛光機的周緣轉動，同時晶圓支架本身自 轉。配合晶圓運動，對抛光墊使用細粒徑的磨劑漿液，以 便在晶圓拋光中達成所需光滑性。往往晶圓有些部份較其 他部份接受到更多拋光*會發生拋光不均或不平，儘管有 控制因數避免此問題。結果，有若干抛光墊已設計來減少 晶圓表面在抛光中的非平坦性。例如，Tuttle獲准的美國 專利517 790 8號揭示一種半導體晶圓用的抛光墊，包括一 面，可對半導體晶圓有一定的表面接觭率，以遂行改進晶 圓的平坦性。此面圖案包括曰射圖案，具有非斜縮光線， 與墊的轉動共軸線。 舒渋部屮欢#.準^PJ.消抡合竹ίι印欠 (对先閱讀背1¾之注意事項再功寫本頁) 線I. 另一專利是准予Allan等人的美國專利5 394655號， 記載一種半導體拋光墊，有部份抛光表面因墊厚度減小而 除去，故越過拋光墊減薄部份的晶圓表面，不像晶圓其他 部份那樣拋光。由模具形成的抛光墊載於Yu等人獲准的 美國專利544 1 598號，Yu等人的抛光墊具有拋光側，可 採取數種不同形狀，視模具主要表面而定，沿墊的拋光側 可形成凹溝，以便可用較小胞孔徑，或在墊的抛光側可形 成具有特定高度的複數特點。結果，模具可對墊抛光側的 表面更加控制。 此外，准予Roberts的美國專利5605760號揭示一種 —2 — 纸張尺政诚州t阁K家行4M ( NS ) Λ4現格（210 '/297公釐) 4340 9 1 A7 B7 五、發明説明（3 ) 拋光墊，包括實體均勻聚合物片，沒有能力吸收或傳送漿 液粒*此拋光墊可用光學檢測，以檢測晶圓在抛光時的晶 圓表面條件。使人可以監視晶圓的平坦性。准予Burke等 人的美國專利564 5 4 69號記載一種拋光墊，在其拋光表面 具有徑向延伸的斜縮溝道。溝道構成可從抛光表面的內徑 引導至拋光表面的外徑，溝道又可造形爲日射或海星圓 案0 ， 雖然上述習知抛光墊都設計來改善拋光中的晶圓表面 平坦性，但前案拋光墊無一針對半導體晶圓在化學機械性 拋光中所用抛光墊的設計或造型原則，改善抛光墊保養（除 去和更換拋光墊）及貯藏。此外，無一前案抛光墊可以克 服晶圓直徑大型化必須解決的使用大型拋光墊相關的問題 和缺點。同時*監督和達成晶圓表面平坦性仍是重點。 因此，亟需有一種抛光墊，可洪容易除去和更換抛光 墊，包含極大型抛光墊，亦有助於提供或改善晶圓表面的 平坦性。 發明槪要 本發明主要目的，在於提供改良拋光墊，用於工作件， 尤指半導體晶圓的化學機械式拋光。 本發明次一目的，在於提供改良拋光墊，用於半導體 晶圓的化學機械式拋光，藉方便和改善抛光中所用漿液分 配，以改進晶圓表面的平坦性。 本發明另一目的，在於提供分段抛光墊’方便化學機 械式拋光機所用拋光墊之除去、更換和儲存。 一 3 — ;紙乐^度1¾川中H W ((，NS ) Λ4坭格（210x297公漦） ----·------%------訂一r------線 (邡先間讀背vg之注意事項再填寫本頁) 广 4 3 4 0 9 ^· A7 B? 五、發明説明（4 ) 本發明又一目的，在於提供一種抛光墊，可製成配合 大型拋光檯平台，係生產用來配合半導體業中大型晶圓的 趨勢。 簡言之，本發明針對一種拋光墊，包括個別派（Pie) 型段。在整個拋光墊使用壽命中，不同時候每次可除去和 更換一派型段，亦可每次除去或吏換一段以上或全部。本 發明分段抛光墊可供容易除去和更換抛光墊，無論拋光墊 直徑如何，因爲單一派型件更易處理和操作。再者，現有 抛光墊係平放堆積收藏，所以佔有大量地面空間，而本發 明分段拋光墊方便抛光墊的貯藏，因爲個別墊段平放時地 面空間較省。本發明抛光墊的個別分段件，方便化學機械 式拋光機用拋光墊之廢棄，機器位在清淨室內，而現有大 型抛光墊在清淨室環境內棄置很麻煩。本發明抛光墊的個 別分段件，容易從化學機械式拋光機的搭接輪除去，並立 即放入丟棄袋內。 圖式簡單說明 本發明參照附圓詳述如下，其中同樣符號指相同元 件，而： 圓1爲目前技藝上已知半導體晶圓拋光和磨平機之透 視示意圖； 圖2和圖3爲圚1所示晶圓拋光機的俯視斷面圓，表 示機器不同組件在拋光過程中的不同時機： 蹯4爲半導體晶圓支架元件與連接原位拋光墊調理環 的側視斷面圔： _ 4 一 本紙从则1 (¾ Κ ㈣（（·NS ) Λ规格（2!flx297公聲) ~ (¾先閱讀背而之注意事項再填巧本頁) •·*Λ. 级 :4340 9 1 A7 _ B7 五、發明説明（5 ) 圓5爲化學機械式拋光機所用前案拋光墊之俯竭平面 IBP · 圓， 圓^爲化學機械式拋光機所用本發明分段拋光墊第一 較佳具體例之俯視平面圓； 圖7爲圓6分段抛光墊的個別派型段堆積貯存之透視 P3I · 圖* 圖8爲化學機‘械式抛光機所用本發明分段抛光墊第二 具體例之俯視平面圓； 圖9爲化學機械式拋光機所用本發明分段拋光墊第三 具體例之俯視平面圓； 圚爲化學機械式抛光機所用本發明分段拋光墊第 四具體例之俯視平面圓。 較佳具體例之詳細說明 本發明係關於改良拋光墊，可用於化學機械式拋光 機，抛光工作件，尤指半導體晶圓。改良拋光墊包括派型 段，彼此完全分離，使得個別段容易每次取一個。爲了更 爲完全明白本發明分段拋光墊的優點，說明分段抛光墊所 用化學機械式拋光機，連同拋光方法。 茲參見圓1至圓3，表示本發明具體例之晶圓拋光裝 置〗00。晶圓拋光裝置ί〇〇適當包括大容量晶圓拋光機， 從前一處理步驟接受晶圓，將晶圓拋光和沖洗，並把晶圓 重裝回晶圓卡匣，以供後續處理。茲詳述拋光裝置100, 此裝置1〇〇包括卸料站102、晶圓過渡站104、拋光站106, 以及晶圓沖洗和裝料站108。 -5 - 本紙乐尺度试用中阈Κ象榡碑（ΓΝ$ ) 7\视格（21〇-/ 297公楚]_ (計先閱讀背而之ίί意事項再填寫本頁) I IJ· - -. - - Jn - 訂l ^ T-线 ’Bu 4 3 4 Ο 9 1 Α7 Β7 V. Description of the invention (2) Various commercially available materials are formed. Typical polishing pads are blown polyesters, such as the 1C and GS series polishing pads manufactured and sold by Rodel Products, Inc., in Scotia, Arizona. The hardness and density of the polishing pad depends on the material to be polished. The wafer holder rotates around the periphery of the polishing machine, while the wafer holder itself rotates. In conjunction with wafer motion, a fine-grained abrasive slurry is used on the polishing pad to achieve the required smoothness in wafer polishing. Often, some parts of the wafer receive more polishing than others. * Polishing unevenness or unevenness will occur, although there are control factors to avoid this problem. As a result, several polishing pads have been designed to reduce the unevenness of the wafer surface during polishing. For example, U.S. Patent No. 517,790, 8 approved by Tuttle discloses a polishing pad for semiconductor wafers, including one side, which can have a certain surface contact rate with semiconductor wafers to improve the flatness of the wafer. This surface pattern includes a radial pattern with non-inclined light and is coaxial with the rotation of the pad.舒 渋 部 屮 欢 #. 准 ^ PJ. Consumption in combination with bamboo 印 欠 (Notes on reading the back 1¾ before writing this page) Line I. Another patent is US Patent No. 5,394,655 granted to Allan et al. A semiconductor polishing pad is described, in which part of the polishing surface is removed due to the reduction in the thickness of the pad, so the wafer surface that passes over the thinned part of the polishing pad is not polished like other parts of the wafer. The polishing pad formed by the mold is contained in U.S. Patent No. 544 1 598 approved by Yu et al. The polishing pad of Yu et al has a polishing side and can take several different shapes, depending on the main surface of the mold. The grooves are formed so that a smaller cell diameter can be used, or a plurality of features with a specific height can be formed on the polished side of the pad. As a result, the mold can have more control over the surface on the polishing side of the pad. In addition, U.S. Patent No. 5,605,760 granted to Roberts reveals a kind of 2—paper ruler Chengzhou T Court K Jiaxing 4M (NS) Λ4 present (210 '/ 297 mm) 4340 9 1 A7 B7 V. Description of the invention ( 3) A polishing pad, including a solid uniform polymer sheet, has no ability to absorb or transfer slurry particles * This polishing pad can be optically inspected to detect wafer surface conditions when the wafer is being polished. Allows one to monitor the flatness of the wafer. U.S. Patent No. 564 5 4 69, issued to Burke et al., Describes a polishing pad having a tapered channel extending radially on its polishing surface. The channel structure can be guided from the inner diameter of the polishing surface to the outer diameter of the polishing surface, and the channel can be shaped as a solar or starfish circle. Although the conventional polishing pads are designed to improve the flatness of the wafer surface during polishing, However, none of the previous polishing pads is based on the design or modeling principles of polishing pads used in chemical mechanical polishing of semiconductor wafers, and improves the maintenance (removal and replacement of polishing pads) and storage of polishing pads. In addition, none of the previous polishing pads can overcome the problems and disadvantages associated with the use of large polishing pads that must be addressed for larger wafer diameters. At the same time, monitoring and achieving wafer surface flatness remains a priority. Therefore, there is an urgent need for a polishing pad that can be easily removed and replaced, including very large polishing pads, which also helps to provide or improve the flatness of the wafer surface. SUMMARY OF THE INVENTION The main object of the present invention is to provide an improved polishing pad for chemical mechanical polishing of a work piece, especially a semiconductor wafer. It is a second object of the present invention to provide an improved polishing pad for chemical mechanical polishing of semiconductor wafers, to improve the flatness of the wafer surface by facilitating and improving the slurry distribution used in polishing. Another object of the present invention is to provide a segmented polishing pad 'to facilitate the removal, replacement and storage of polishing pads used in chemical mechanical polishing machines. 1 3 —; paper music ^ degree 1 ¾ HW ((, NS) Λ 4 坭 grid (210x297 male) in the Sichuan ---- · ------% ------ order a r ----- -Line (Please note the vg before reading this page before filling out this page) Canton 4 3 4 0 9 ^ · A7 B? 5. Description of the invention (4) Another object of the present invention is to provide a polishing pad, which can be made into With the large polishing table platform, it is produced to match the trend of large wafers in the semiconductor industry. In short, the present invention is directed to a polishing pad, including individual Pie-type segments. During the entire polishing pad life, at different times One section can be removed and replaced at a time, and one or more or all sections can be removed or replaced at one time. The segmented polishing pad of the present invention allows for easy removal and replacement of the polishing pad, regardless of the diameter of the polishing pad, because a single profile is easier Handling and operation. Furthermore, the existing polishing pads are stacked and stored flat, so they occupy a lot of floor space, and the segmented polishing pad of the present invention facilitates storage of the polishing pads, because the floor space is less when the individual pad sections are laid flat. Individual segmented parts, which facilitates the disposal of polishing pads for chemical mechanical polishing machines, The machine is located in the clean room, and it is very troublesome to dispose of the existing large polishing pad in the clean room environment. The individual segmented pieces of the polishing pad of the present invention can be easily removed from the lapping wheel of the chemical mechanical polishing machine and immediately put into the disposal bag The drawings briefly illustrate the present invention in detail with reference to the attached circle, where the same symbols refer to the same elements, and: Circle 1 is a schematic perspective view of a semiconductor wafer polishing and smoothing machine known in the art; Figures 2 and 3 are 圚The top section circle of the wafer polishing machine shown in 1 indicates different timings of the different components of the machine during the polishing process: 蹯 4 is a side sectional view of the semiconductor wafer holder component and the in-situ polishing pad conditioning ring 环: _ 4 A piece of paper from 1 (¾ Κ ㈣ ((· NS) Λ specifications (2! Flx297)) ~ (¾ Read the precautions before filling in this page) • * Λ. Grade: 4340 9 1 A7 _ B7 V. Description of the invention (5) Circle 5 is the exhaustion plane IBP of the polishing pad used in the previous case of the chemical mechanical polishing machine. Circle, circle ^ is the first preferred embodiment of the segmented polishing pad of the present invention used in the chemical mechanical polishing machine. Example of a plane circle in plan view; Figure 7 is a circle 6 segment throw Perspective P3I of the accumulation and storage of individual sections of light pads. Figure * Figure 8 is a top plan circle of the second specific example of the segmented polishing pad of the present invention used in a chemical mechanical polishing machine; Figure 9 is used in a chemical mechanical polishing machine The top plan circle of the third specific example of the segmented polishing pad of the present invention; 圚 is the top plan circle of the fourth specific example of the segmented polishing pad of the present invention used by a chemical mechanical polishing machine. Polishing pads can be used in chemical mechanical polishing machines, polishing work pieces, especially semiconductor wafers. Improved polishing pads include profiled sections that are completely separated from each other, making it easy to take individual sections one at a time. In order to fully understand the advantages of the segmented polishing pad of the present invention, a chemical mechanical polishing machine and a polishing method used in the segmented polishing pad will be described. Referring to circles 1 to 3, the wafer polishing apparatus of the specific example of the present invention is 00. The wafer polishing device Ι〇 appropriately includes a large-capacity wafer polishing machine, which receives the wafer from the previous processing step, polishes and rinses the wafer, and reloads the wafer back into the wafer cassette for subsequent processing. The polishing apparatus 100 is described in detail. The apparatus 100 includes a discharge station 102, a wafer transition station 104, a polishing station 106, and a wafer washing and loading station 108. -5-Threshold in the trial of this paper music scale Κ 象 榡 像 (ΓΝ $) 7 \ View Grid (21〇- / 297 公 楚) _ (I plan to read the back of the matter and fill in this page first) I IJ ·- -.--Jn-Order
I ........ 11 ί Γ- - 1-- - - : -I ’ 4340 9 1 A7 _____B7 五、發明説明（6 ) 按照本發明較佳具體例，卡匣110各持有複數晶圓， 在裝料站102裝入機器內。其次，機器人的晶圓支架臂112 從卡匪Π〇取出晶圓，逐一放在定中固定具Π3上。晶圓 傳送臂1 1 4即提升晶圓移動到晶圓過渡站1 04，即傳送臂 1 14把個別晶圓放到複數的晶圓拾取站1 1 6之一，後者位 在晶圓過渡站104內的轉動檯120上。轉動檯120亦適當 包含複數晶圓掉放·站118，與晶圓拾取站116交替，俟晶 圓定著在複數拾取站116之一後，檯120可以轉動，使新 站116與傳送臂114對準。傳送臂114即將次一晶圓放在 新空出的拾取站116上。此法繼續到全部拾取站116裝滿 晶圓。在本發明較佳具體例內，檯120包含五個拾取站116 和五個掉放站1 1 8。 其次，包括個晶圓支架元件124的晶圓支架裝置122, 本身宜在檯120上方對準，使各支架元件124直接在位於 各拾取站116的晶圓上方。拾取站116再向上運動，把晶 圓裝入支架裝置122內，而支架裝置122側向運動晶圓， 使晶圓位在抛光站106之上。一旦在抛光站106上方，支 架裝置1 22即適度降低個別元件1 24持有的晶圓，與位在 搭接輪128頂的抛光墊126呈操作結合。於操作中，塔接 輪128促使拋光墊126繞其直立軸線轉動。同時，個別支 架元件124使晶圓繞其各軸直軸線旋轉，並使晶圓前後跨 越墊126(實質上沿箭頭133)擺動，同時壓緊拋光墊。 以此方式，晶圓表面即被拋光或磨平。 適當期間後，晶圓從拋光墊〗26除去，支架裝置1 22 —6 — 孓纸张尺度进，ΐΓΐϋ K家標々(CNS ) Λ4^ ( 210X297^# ] " —^1 ^^—^1 ^ί—^1 I 1- In ijm ^^^^1 ^^^^1 1^11 111> rEi^E----— T~^ ί—^f II (¾先閱讀背而之注意事項再填{:,,J本頁) 4340 9 1 a? _ _____B7_ 五、發明説明（7 ) 把晶圓送回到過渡站1〇4。掉放站118上升到支架裝置 122，接受用水射出和/或吹落的晶圓。晶圓即從掉放站 118利用第二傳送臂130除去。傳送臂130從過渡站104 提起各晶圓，傳送到晶圓冲洗和裝料站1 08。在裝料站 1〇8，傳送臂13〇保持晶圓受到沖洗，徹底沖洗後，晶圓 再裝入卡匣〗32,再輸送至後繼站，供進一步處理或包裝。 在此拋光和磨‘平製程中，拋光墊會磨耗，變成效果較 遜。所以，磨光或調理拋光墊126以除去在抛光中可能展 現的任何表面不規則，乃爲重要之舉。一般而言，調理抛 光墊有二途：原位和移位調理。原位調理是在晶圓拋光過 程中爲之，而移位調理是發生在拋光歩驟之間。 茲參見圓2至圓4,先說明原位調理。按照本發明較 佳具體例，原位調理一般係將原位調瑝元件200連接至個 別支架元件124爲之。所以，支架元件124在拋光墊上方 轉動和移動晶圓，調理元件200也會接觸抛光墊，因此將 墊調理，同時將晶圓抛光。 茲參見圓4，說明調理元件200和支架元件124的造 型。如前所述，支架元件124在抛光操作中，保持晶圓壓 緊拋光墊。技藝上已知，支架元件124可包括許多不同具 體例。然而，爲說明本發明，按照圖4所示具體例說明支 架元件124。 ' 支架元件124宜包括壓板〗42、支架壳140、扣環144， 和轉動軸146。壓板142對緊壓抛光墊Κ6的晶圓10背 側，施加平均分配的向下壓力。保護層11宜在壓板142 —7 一 ί、紙汍尺度这川家標彳(('NS ) Λ视格（210X 297公笫) ----.------**"------訂^------線 (請先閱讀背而之注意事項再填巧本頁) 4340 9 1 A7 B7 五、發明説明（8 ) 和晶圓1 〇間，以保護拋光過程中的晶圓。保護層1 1可爲 任何類型的半硬質材料，在施壓時不會破壞晶圓；例如聚 胺酯型材料。晶圓可利用方便機制，例如真空或溼面 張力，保持靠近保護層11。圓形扣環144宜繞保護層142 周圍連接，並防止晶圓10在拋光時從保護層下方側向溜 出。扣環I44 一般是利用螺栓148連接於支架壳140。 也接至支架％ 140的是調理元件200，係由金屬等硬 質材料形成的環。如圓4所示，調理元件200宜包含向下 延伸突緣2〇2，到附設裁切元件的實質平底表面爲止。突 緣2〇2有足夠長，使附設裁切元件的底面204 ,在處理中 接觸到抛光墊。再者，調理元件200宜利用螺栓206鬆弛 連接於支架壳丨4〇。壓板140和調理元件2 00間的此項鬆 弛連接，容許調理元件200有限的直立蓮動，但限制側向 運動。容許調理元件2 00發生在螺帽20 8和210間（圚4) 的直立運動，使裁切元件藉調理元件200，而非支架元件 】24所施壓力，與墊126接觸。如有需要，調理元件200 可另加加重環212，以增加環重量和對墊的調理壓力。 在裝置100操作中，支架元件124持有的晶圓〗〇， 被帶到固設在搭接輪128的拋光墊126接觸。爲加大抛光， 最好把磨劑漿液引進拋光墊1 26和晶圓1 0間。如技藝上 所知，可用各種磨劑漿液。晶圓10與墊.126接觸時，搭 接輪128和支架元件124均轉動，因而方便晶圓的抛光和 磨平。此外，當支架元件124把晶圓10降到墊上時，連 接至支架元件〗24的調理元件200，即降低到與墊接觸， —8 本纸张尺度进用中囡糸榡今（（’NS ) Λ4規格（210X2974^"") (讀先閱讀背面之注意事項再填艿本頁) 丁 線 1 4340 9 1 a? _ B7 五、發明説明（9 ) 搭接輪丨28和支架元件124轉動時，突緣202底面204上 的裁切元件會激動，因此調理抛光墊126,晶圓同時受到 拋光。： 翻到圓5,表示已知拋光墊146，其中抛光墊146包 括聚胺酯材料的單一圓形層147,有內徑148和外徑150。 目前所有化學機械式抛光墊均爲單片，裁成化學機械式拋 光機的抛光檯直徑'。目前大型墊的外徑32吋，而旦圓形 單片拋光墊經堆積和平放貯存。因此，容易看到單片32 吋直徑抛光墊堆積會佔有實賛量的地面空間。本發明分段 拋光墊可方便拋光墊的儲存，個別墊段可堆積存放，因而 減少所需貯存空間。 本發明分段拋光墊156的第一較隹具體例如圖6所 示。分段拋光墊156包括單層的6個派型段158,各有外 緣160和內緣162。當全部派型段158妥爲定位時，各派 型段158間形成溝道164。溝道164可改進在抛光墊和晶 圓間的磨劑漿液之分配，以加大拋光。此第一較佳具體例 可由諸如Rodel公司所製IC 100/Suba IV墊等現有32吋 外徑抛光墊形成。32吋直徑墊切成6個派型段158,約60 度角，段158間狹到夠留下極小間隙，即1/16吋以下， 間隙形成溝道164。另外，拋光墊可切成段間不留間隙。 本發明分段抛光蟄比傳統單件拋光墊更易貯存、更易 應用、更易除去、更易棄置，例如，工入更易在清洗室內 除去和更換單一派型段，比圖5所示32吋直徑單件拋光 墊更小且更不麻煩。另外由圓7可見，派型段堆積存放所 —9 - 糸紙张尺度珅用中K ®家標肀(('NS ) Mim { 210 X297^* ) ----------ΐ,------ΐτ------^ < (請先閱讀背面之注意事項再填寫本頁) ¾¾.部屮决ifT;';-5:^.T.消於合什·社印^. ^ 43409 1 A7 __B7 五、發明説明（10 ) 需地面空間，較傳統單件抛光墊爲少。 大型單件抛光墊在清洗室環境也常難棄置。本發明較 小的派型段抛光墊容易放入棄置袋內，供清洗室除去。段 間158產生的溝道164亦可在抛光中具有改進漿液分配的 額外利益，以致改進晶圓表面的平坦性，而溝道本身可實 際上改進晶圓表面的拋光。然而，需特別小心更正墊段158 間任何可能的厚度·變化。此外，如發現晶圓某些面積與拋 光墊接觸要比其他面積更加抛光，則個別墊段158可設計 成厚度變化，以加大晶圓表面的平坦性。 圖8、圖9和蔺10表示本發明分段拋光墊其他具體 例之俯視平面圖。視拋光墊所需外徑，可以改變包括本發 明分段拋光墊的派型段數量。例如圖8所示分段拋光墊166 第二具體例，包括16個派型段168,各具有外綠170和 內緣172,段168煙產生溝道174。圓9所示分段拋光墊 1 76的第三具體例，包括4個派型段178,各有外緣180、 內緣182,和段178間產生的溝道184。最後，圚10所示 分段拋光墊186的第四具體例包括8個派型段188,各有 外緣19〇、內緣I92,和段I88間產生的琿道I94。 須知前述爲本發明較佳具體例，而本發明不限於圖示 或所述特定型。在本案所述元件的設計、配置、類型方面， 以及本發明製作和使甩歩驟，可有各種修飾，不違本發明 在所附申請專利範圍中表達之範圍。 —10 — 孓紙浪尺度適用中阄四家標孕(CNS )八4祕（2ΪΟΧ297公廣) ---------1------ΪΤ!----- (锖先閲绩背面之注意Ϋ項再填寫本页)I ........ 11 ί Γ--1----: -I '4340 9 1 A7 _____B7 V. Description of the invention (6) According to a preferred embodiment of the present invention, each of the cassettes 110 holds a plurality The wafers are loaded into the machine at the loading station 102. Secondly, the robot's wafer holder arm 112 takes out the wafers from the card holder Π0 and places them one by one on the centering fixture Π3. The wafer transfer arm 1 1 4 lifts the wafer and moves to the wafer transfer station 1 04. The transfer arm 1 14 transfers individual wafers to one of a plurality of wafer picking stations 1 1 6, which is located at the wafer transfer station. 104 on the turntable 120. The turntable 120 also suitably includes a plurality of wafer drop and drop stations 118, which alternates with the wafer picking station 116. After the wafer is fixed at one of the plurality of picking stations 116, the stage 120 can be rotated to enable the new station 116 and the transfer arm 114 alignment. The transfer arm 114 places the next wafer on the newly vacated pickup station 116. This method continues until all pickup stations 116 are filled with wafers. In a preferred embodiment of the present invention, the stage 120 includes five pickup stations 116 and five drop stations 1 1 8. Second, the wafer support device 122 including the wafer support elements 124 should be aligned above the stage 120 so that each support element 124 is directly above the wafer at each pickup station 116. The picking station 116 moves up again to load the wafer into the holder device 122, and the holder device 122 moves the wafer laterally so that the wafer is positioned above the polishing station 106. Once above the polishing station 106, the holder device 1 22 moderately lowers the wafer held by the individual components 1 24, and is operatively combined with the polishing pad 126 on top of the lapping wheel 128. In operation, the tower wheel 128 causes the polishing pad 126 to rotate about its upright axis. At the same time, the individual support element 124 rotates the wafer about its straight axis, and swings the wafer back and forth across the pad 126 (substantially along arrow 133) while pressing the polishing pad. In this way, the wafer surface is polished or ground. After an appropriate period, the wafer is removed from the polishing pad 26, and the holder device 1 22 —6 — 孓 paper scale advance, ΐΓΐϋ K 家 标 々 (CNS) Λ4 ^ (210X297 ^ #] " — ^ 1 ^^ — ^ 1 ^ ί— ^ 1 I 1- In ijm ^^^^ 1 ^^^^ 1 1 ^ 11 111 > rEi ^ E ----— T ~ ^ ί— ^ f II (¾Precautions for reading first Fill in {: ,, J page) 4340 9 1 a? _ _____B7_ V. Description of the invention (7) Send the wafer back to the transition station 104. The drop station 118 rises to the rack device 122, and accepts water injection and The wafer is blown off. The wafer is removed from the drop station 118 by the second transfer arm 130. The transfer arm 130 lifts each wafer from the transition station 104 and transfers it to the wafer washing and loading station 108. On loading In the material station 108, the transfer arm 13 keeps the wafers flushed. After the wafers are thoroughly washed, the wafers are reloaded into the cassettes 32, and then transported to the subsequent stations for further processing or packaging. The polishing and grinding process is performed here. In general, the polishing pad will wear and become less effective. Therefore, it is important to polish or condition the polishing pad 126 to remove any surface irregularities that may appear during polishing. Generally speaking, there are two ways to condition the polishing pad. In-situ and shift conditioning. In-situ conditioning is performed during wafer polishing, while shift conditioning occurs between polishing steps. See circle 2 to circle 4 to explain in-situ conditioning first. According to the invention For a specific example, the in-situ conditioning generally connects the in-situ conditioning element 200 to an individual support element 124. Therefore, the support element 124 rotates and moves the wafer over the polishing pad, and the conditioning element 200 also contacts the polishing pad. Therefore, the pad is conditioned and the wafer is polished at the same time. Referring to circle 4, the shapes of the conditioning element 200 and the holder element 124 are described. As mentioned earlier, the holder element 124 keeps the wafer pressed against the polishing pad during the polishing operation. Technically, It is known that the stent element 124 may include many different specific examples. However, in order to illustrate the present invention, the stent element 124 is described in accordance with the specific example shown in FIG. 4. And the rotating shaft 146. The pressure plate 142 exerts an evenly distributed downward pressure on the back side of the wafer 10 that tightly presses the polishing pad K6. The protective layer 11 is preferably on the pressure plate 142-7. 'NS) Λ Grid (2 10X 297 males) ----.------ ** " -------- Order ^ ------ line (please read the precautions on the back before filling in this page) 4340 9 1 A7 B7 V. Description of the invention (8) and wafer 10 to protect the wafer during polishing. The protective layer 11 can be any type of semi-rigid material and will not damage the wafer when pressure is applied. ; For example, polyurethane-type materials. The wafer can be held close to the protective layer 11 using a convenient mechanism such as vacuum or wet surface tension. The circular buckle 144 should be connected around the protective layer 142 and prevent the wafer 10 from slipping out from under the protective layer during polishing. The buckle I44 is generally connected to the bracket housing 140 by using bolts 148. Also connected to the bracket% 140 is the conditioning element 200, which is a ring formed of a hard material such as metal. As shown by circle 4, the conditioning element 200 preferably includes a downwardly extending flange 202 to a substantially flat bottom surface with a cutting element attached. The flange 202 is long enough so that the bottom surface 204 with the cutting element is in contact with the polishing pad during processing. In addition, the conditioning element 200 is preferably loosely connected to the support case 40 using bolts 206. This loose connection between the pressure plate 140 and the conditioning element 200 allows for limited upright movement of the conditioning element 200, but limits lateral movement. The upright movement of the conditioning element 200 between the nut 20 8 and 210 (圚 4) is allowed, so that the cutting element is brought into contact with the pad 126 by the pressure exerted by the conditioning element 200 instead of the bracket element. If necessary, the conditioning element 200 may further add a weighting ring 212 to increase the ring weight and the conditioning pressure on the pad. During the operation of the apparatus 100, the wafer held by the holder element 124 is brought into contact with the polishing pad 126 fixed to the lapping wheel 128. In order to increase the polishing, it is better to introduce the abrasive slurry between the polishing pad 126 and the wafer 10. As is known in the art, various abrasive slurries can be used. When the wafer 10 is in contact with the pad .126, the overlap wheel 128 and the holder element 124 are both rotated, thereby facilitating polishing and flattening of the wafer. In addition, when the holder element 124 lowers the wafer 10 onto the pad, the conditioning element 200 connected to the holder element 24 is lowered to contact the pad, and the paper size is in use today (('NS) Λ4 specifications (210X2974 ^ " ") (Read the precautions on the back before filling in this page) Ding 1 1 4340 9 1 a? _ B7 V. Description of the invention (9) Lapping wheel 丨 28 and bracket element 124 When rotating, the cutting elements on the bottom surface 204 of the flange 202 are excited, so the polishing pad 126 is conditioned, and the wafer is polished at the same time .: Turning to circle 5 indicates a known polishing pad 146, where the polishing pad 146 includes a single polyurethane material The circular layer 147 has an inner diameter of 148 and an outer diameter of 150. At present, all chemical mechanical polishing pads are single pieces, which are cut into the diameter of a polishing table of a chemical mechanical polishing machine. Round single-piece polishing pads are stacked and stored flatly. Therefore, it is easy to see that a single 32-inch diameter polishing pad stack will occupy a real amount of floor space. The segmented polishing pad of the present invention can facilitate the storage of polishing pads, and individual pad sections Stackable storage, reducing required storage space The first specific example of the segmented polishing pad 156 of the present invention is shown in Fig. 6. The segmented polishing pad 156 includes a single layer of six profile sections 158, each having an outer edge 160 and an inner edge 162. When all the profiles are When the segments 158 are properly positioned, channels 164 are formed between the various types of segments 158. The channels 164 can improve the distribution of the abrasive slurry between the polishing pad and the wafer to increase polishing. This first preferred specific example can be obtained by Existing 32-inch outer diameter polishing pads such as IC 100 / Suba IV pads made by Rodel. 32-inch diameter pads are cut into 6 faction sections 158, about 60 degrees, with 158 sections narrow enough to leave a very small gap. That is, under 1/16 inch, the gap forms a channel 164. In addition, the polishing pad can be cut into sections without leaving a gap. The segmented polishing pad of the present invention is easier to store, easier to apply, easier to remove, and easier to dispose than the traditional single-piece polishing pad. For example, it is easier to remove and replace a single section in the cleaning room, which is smaller and less troublesome than the 32-inch diameter single-piece polishing pad shown in Figure 5. In addition, as can be seen from circle 7, the section section is stored in a storage place—9-糸 Paper size: K ® house standard (('NS) Mim {210 X297 ^ *) ---------- ΐ, ------ ΐτ ----- -^ < (Please read the notes on the back before filling out this page) ¾¾.Ministry of Decision ifT; ';-5: ^. T. Eliminated by Heshi · Shenzhen ^. ^ 43409 1 A7 __B7 V. Invention Note (10) Floor space is required, which is less than traditional single-piece polishing pads. Large single-piece polishing pads are often difficult to dispose of in the cleaning room environment. The smaller-pattern polishing pads of the present invention are easily placed in a disposal bag for cleaning The channels 164 produced by the segments 158 can also have the added benefit of improving slurry distribution in polishing, so as to improve the flatness of the wafer surface, while the channels themselves can actually improve the polishing of the wafer surface. However, special care must be taken to correct any possible thickness / changes between the pad segments 158. In addition, if it is found that some areas of the wafer are more polished in contact with the polishing pad than others, the individual pad segments 158 can be designed to vary thickness to increase the flatness of the wafer surface. Figs. 8, 9 and 10 show plan views of other specific examples of the segmented polishing pad of the present invention. Depending on the required outer diameter of the polishing pad, the number of profiles including the segmented polishing pad of the present invention can be changed. For example, the second specific example of the segmented polishing pad 166 shown in FIG. 8 includes 16 patterned segments 168 each having an outer green 170 and an inner edge 172, and the segment 168 generates smoke channels 174. A third specific example of the segmented polishing pad 1 76 shown in circle 9 includes four patterned segments 178, each having an outer edge 180, an inner edge 182, and a channel 184 formed between the segments 178. Finally, the fourth specific example of the segmented polishing pad 186 shown in Fig. 10 includes eight patterned segments 188, each having an outer edge 190, an inner edge I92, and a channel I94 generated between the segments I88. It should be noted that the foregoing is a preferred specific example of the present invention, and the present invention is not limited to the illustrated or described specific types. Various modifications can be made in the design, configuration, and type of the elements described in this case, as well as in the steps of making and making the invention, without departing from the scope of the invention as expressed in the scope of the attached patents. —10 — The paper wave scale is applicable to the four secrets (CNS) of the four Chinese standard pregnancy (2 秘 Ο × 297 公 广) --------- 1 ------ ΪΤ! ----- (锖(Please read the note on the back of the performance before filling out this page)