M432137 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種電漿輔助化學氣相沉積裝置，且 特別是有關於一種電漿辅助化學氣相沉積裝置之電力傳輸 臂結構。 【先前技術】 在半導體製程中，化學氣相沉積（Chemical Vapor Deposition ; CVD)經過不斷的發展和改良，已經成為半導 體製程中相當重要的薄膜沉積方式。化學氣相沉積反應係 藉著反應氣體間的化學反應來沉積產生所需要的薄膜，所 以根據欲生成的薄膜，化學氣相沉積反應時的反應條件又 各有不同，然而大致上可分為常壓化學氣相沉積、低壓化 學氣相沉積和電聚辅助化學氣相沉積（Plasma Enhanced Chemical Vapor Deposition ; PECVD)三種。 第1圖為一種習知的電漿輔助化學氣相沉積裝置的示 意圖。在電漿辅助化學氣相沉積製程中，提供穩定的電漿 為重要的控制條件，而要產生穩定的電漿，則須提供穩定 的射頻電力（此電力的頻段約為13·56ΜΗζ，近似於射頻， 因而得名）。電漿輔助化學氣相沉積裝置100包含有射頻電 力產生器（radio frequency power generator)l 10、匹配箱 (match box) 120、射頻電力傳輸臂（radio frequenCy arm) 130’以及反應室140。射頻電力產生器110輸出射頻 電力後搭配匹配箱120’將穩定功率的電力透過射頻電力傳 輸臂130傳送至反應室140中之上電極150產生電聚。在 4 M432137 電力傳輸的過程之中，若是出現干擾，容易使得回饋功率 增加，加大射頻電力產生器110的負擔，造成功率損失， 使得成膜失敗的可能性變大。 因此，如何提升電漿輔助化學氣相沉積裝置中，電力 傳輸的穩定性，便成為一個重要的課題。 【新型内容】 因此本新型的目的就是在提供一種用於電漿辅助化學 氣相沉積裝置之電力傳輸臂結構，用以維持電力傳輸的穩 定性。 依照本新型一實施例，提出一種射頻電力傳輸臂結 構，包含射頻電力傳輸臂與間隙絕緣插銷。射頻電力傳輸 臂包含上接地端、下接地端，與位於上接地端與下接地端 之間的電極，其中上接地端與電極之間具有第一間隙，電 極與下接地端之間具有第二間隙。間隙絕緣插銷包含第一 間隔部、第二間隔部，與連接第一間隔部和第二間隔部之 連接部，其中第一間隔部插入上接地端與電極之間以維持 第一間隙，第二間隔部插入電極與下接地端之間，以維持 第二間隙。 射頻電力傳輸臂包含有彎折段，間隙絕緣插銷可以設 置於彎折段後。間隙絕緣插銷之材料可以為鐵氟龍。間隙 絕緣插銷為C字形結構。連接部接觸射頻電力傳輸臂。第 一間隔部之厚度與第一間隙相同，第二間隔部之厚度與第 二間隙相同。 間隙絕緣插銷之第一間隔部與第二間隔部分別插入上 5 M432137 接地端與電極之間，以及電極與下接地 接地端與電極之間的第一間隙，以及維^之間，以維持上 之間的第二間隙。此間隙絕緣插銷尤其湳:接地端與電極 電力傳輸臂之彎折段之後方，以避免置在射頻 端、電極與下接地端之間的間隙過窄 又的上接地 使得電力傳輸更為穩定。 ㈣產㈣電容效應’M432137 5. Description of the new type: [Technical field to which the new type belongs] The present invention relates to a plasma-assisted chemical vapor deposition device, and more particularly to a power transmission arm structure of a plasma-assisted chemical vapor deposition device. [Previous technology] In the semiconductor manufacturing process, chemical vapor deposition (CVD) has become a very important thin film deposition method in the semiconductor process after continuous development and improvement. The chemical vapor deposition reaction is to produce the required thin film by the chemical reaction between the reaction gases. Therefore, the reaction conditions during the chemical vapor deposition reaction are different according to the thin film to be generated, but can be roughly divided into Compression chemical vapor deposition, low pressure chemical vapor deposition, and electro-polymerized chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition; PECVD). Fig. 1 is a schematic view of a conventional plasma-assisted chemical vapor deposition apparatus. In the plasma-assisted chemical vapor deposition process, providing a stable plasma is an important control condition, and to generate a stable plasma, stable radio frequency power must be provided (the frequency band of this power is about 13.56MΗζ, which is approximately RF, hence its name). The plasma-assisted chemical vapor deposition apparatus 100 includes a radio frequency power generator 110, a match box 120, a radio frequency power transmission arm 130 ', and a reaction chamber 140. After the radio frequency power generator 110 outputs radio frequency power, it is matched with the matching box 120 'to transmit the power of stable power through the radio frequency power transmission arm 130 to the upper electrode 150 in the reaction chamber 140 to generate electricity. In the process of 4 M432137 power transmission, if interference occurs, it is easy to increase the feedback power, increase the burden on the RF power generator 110, cause power loss, and increase the possibility of film formation failure. Therefore, how to improve the stability of power transmission in a plasma-assisted chemical vapor deposition device has become an important issue. [New content] Therefore, the purpose of this new model is to provide a power transmission arm structure for a plasma-assisted chemical vapor deposition device to maintain the stability of power transmission. According to an embodiment of the present invention, a radio frequency power transmission arm structure is provided, which includes a radio frequency power transmission arm and a gap insulation pin. The RF power transmission arm includes an upper ground terminal, a lower ground terminal, and an electrode located between the upper ground terminal and the lower ground terminal, wherein a first gap is provided between the upper ground terminal and the electrode, and a second space is provided between the electrode and the lower ground terminal. gap. The gap insulation plug includes a first spacer portion, a second spacer portion, and a connection portion connecting the first spacer portion and the second spacer portion, wherein the first spacer portion is inserted between the upper ground terminal and the electrode to maintain the first gap, and the second The spacer is inserted between the electrode and the lower ground terminal to maintain a second gap. The RF power transmission arm includes a bent section, and the gap insulation bolt can be placed behind the bent section. The material of the gap insulation plug may be Teflon. Gap Insulation pin is C-shaped structure. The connection part contacts the RF power transmission arm. The thickness of the first gap is the same as that of the first gap, and the thickness of the second gap is the same as that of the second gap. The first and second spacers of the gap insulation plug are respectively inserted between the upper 5 M432137 ground terminal and the electrode, and the first gap between the electrode and the lower ground ground terminal and the electrode, and between the two sides to maintain the upper The second gap between. This gap insulation plug is especially 湳: behind the bent end of the power transmission arm between the ground terminal and the electrode to avoid the gap between the RF terminal, the electrode and the lower ground terminal being too narrow and the upper ground making the power transmission more stable. "Capacity effect"
【實施方式】 =料圖歧詳細㈣清楚說料新叙精神，任 何所屬技術領域中具有通常知識者在瞭解本新型之 =例後’當可由本新型所教示之技術，加以改變及修飾， 其並不脫離本新型之精神與範圍。 繼續參照第1圖，射頻電力傳輸臂13〇為一種三片金 =、、且合而成的結構，上層金屬片與下層金屬片分別為接地 ，132、134，中間金屬片為電力傳輸的電極136。一般而[Embodiment] = material maps are detailed and clearly explain the spirit of the new narrative. Any person with ordinary knowledge in the technical field who understands the new type of example should be changed and modified by the technology taught by the new type. Without departing from the spirit and scope of this new model. Continuing to refer to FIG. 1, the RF power transmission arm 13 is a three-piece gold structure, and the upper metal sheet and the lower metal sheet are grounded, respectively, 132 and 134, and the middle metal sheet is an electrode for power transmission. 136. In general
言，電極130與接地端132、134之間不可導通，且電極 =6與接地端132、134之間的間隙需維持固定。然而，在 高溫環境下作業的電漿辅助化學氣相沉積裝置100在經過 長期使用或是維修之後，容易導致電極136與接地端132、 134之間的間隙過小，產生電容效應而發生導通’使得成 膜失敗’尤其是在射頻電力傳輸臂130彎折處’電極136 與接地端132、134之間的間隙更難以維持，電容效應特別 明顯。 因此’本新型便提出了一種用於電漿辅助化學氣相沉 基裝置的射頻電力傳輸臂結構，其具有間隙絕緣插銷，藉 6 乂維=電極與接地端之間的間隙。 施例圖：其為本新型之射頻電力傳輸臂結構-實 插銷20:與射徨::電力傳輸臂結構包含間隙絕緣 一第一 Μ _ '電力傳輸臂3〇0。間隙絕緣插銷200包含 210與塗隔邛210、一第二間隔部220，與連接第一間隔部 與第一二隔部220的連接部230。其中第-間隔部210 垂直於黛為相互平行的兩絕緣板材，連接部230 200 Λ 隔部210與第二間隔部220。間隙絕緣插銷 冷一匚字形結構。 32〇 ’與位於力其m::。包含上接地端310、下接地端 間具有第一，、電極33〇。上接地端310與電極330之 二間隙二义g ’下接地端320與電極330之間具有第 第二間隔部之厚度大致與第一間&相同’ 之厚度大致與第二間隙g，相同。 銷2〇〇可3〇0包含有彎折段350，間隙絕緣插 裝於射頻電力·^折段35G後。當間隙絕緣插銷200組 入第-間隙=第時’只需要將第一間隔部210插 至定# ，、將苐二間隔部220插入第二間隙ε，，i## 插銷議，上= =:二並電性隔離上:::3二：3:二維=; 320。藉此，；1門’並電性隔離電極33G與下接地端 應亦不容易產生§與第二間隙g’被有效維持，電容效 由於射頰電力傳輪臂 300在傳輸電力時會產生大量的 «432137 熱’間隙絕緣插銷200需要可+ > 會高達攝氏綱度以上在;^工作環境，可能 pa *工作而不會過度變形。因此， 隙絕緣插銷之材料較佳地為鐵氣龍(Teflon)。In other words, the electrode 130 and the ground terminals 132 and 134 cannot be conducted, and the gap between the electrode 6 and the ground terminals 132 and 134 needs to be fixed. However, after a long-term use or maintenance of the plasma-assisted chemical vapor deposition device 100 operating in a high-temperature environment, the gap between the electrode 136 and the ground terminals 132 and 134 is likely to be too small, resulting in a capacitive effect and conduction. Film formation failure 'especially where the RF power transmission arm 130 is bent' the gap between the electrode 136 and the ground ends 132, 134 is more difficult to maintain, and the capacitive effect is particularly pronounced. Therefore, the present invention proposes a radio frequency power transmission arm structure for a plasma-assisted chemical vapor deposition-based device, which has a gap insulation plug, and 6 dimensional = the gap between the electrode and the ground terminal. Example diagram: This is a new type of RF power transmission arm structure-real pin 20: and radio transmission :: The power transmission arm structure includes gap insulation-a first M_ 'power transmission arm 300. The gap insulation plug 200 includes 210 and a coating spacer 210, a second spacer 220, and a connecting portion 230 connecting the first spacer and the first two spacers 220. The first-spacer portion 210 is perpendicular to the two insulating plates that are parallel to each other, and the connecting portion 230 200 Λ the spacer portion 210 and the second spacer portion 220. Gap insulation plug Cold-shaped cross-shaped structure. 32〇 ′ and its force m ::. It includes an upper ground terminal 310, a first ground electrode between the lower ground terminal, and an electrode 33o. The second meaning of the gap between the upper ground terminal 310 and the electrode 330 is “the thickness of the second gap between the lower ground terminal 320 and the electrode 330 is substantially the same as that of the first gap & . The pin 2000 may include a bending section 350, and the gap insulation is inserted after the radio frequency power section 35G. When the gap insulation plug 200 is set in the -gap = th ', you only need to insert the first spacer 210 into the fixed #, and insert the second spacer 220 into the second gap ε, i ## : Two parallel electrical isolation: :: 3 two: 3: two-dimensional =; 320. With this, the 1 gate 'electrically isolated electrode 33G and the lower ground terminal should not be easily generated and § and the second gap g' are effectively maintained, and the capacitance effect due to the cheek power transmission wheel arm 300 will generate a large amount when transmitting power The «432137 thermal 'gap insulation plug 200 needs to be available > will be as high as Celsius above; ^ working environment, may pa * work without excessive deformation. Therefore, the material of the gap insulation pin is preferably Teflon.
射』輸臂結構除了前述之間隙絕緣插銷200與 力龍臂外，更包含間隙絕緣子働，用以隔 她、地端310、下接地端320與電極330。間隙絕緣子 為分布在上接地端31〇與電極33()之間，以及分布在 ^接地端320與電極33〇之間。分布在上接地端別與電 極330之間的間隙絕緣子4〇〇之厚度大致與第一間隙g相 同，以維持第一間隙g。分布在下接地端320與電極330 之間的間隙絕緣子侧之厚度大致與第二間隙g，的厚度相 同，以維持第二間隙g，。上接地端31〇、下接地端32〇與 電極330上具有開口，間隙絕緣子4〇〇設置在上接地端 310、電極33〇與下接地端320之間後，利用卡榫410穿過 上接地端310、電極330、下接地端32〇與間隙絕緣子4〇〇 固定。由於射頻電力傳輸臂3〇〇的工作溫度相當的高，間 隙絕緣子400的材料為耐高溫的絕緣材料，如陶瓷或是鐵 氟龍。 射頻電力傳輪臂結構與電漿輔助化學氣相沉積反應室 (圖中未繪7F)連接，其中，射頻電力傳輸臂結構與電漿輔 助化學氣相沉積反應室中的上電極連接。射頻電力傳輸臂 結構更包含有電極螺絲600,上接地端310上具有開孔 360 ’以供電極螺絲600穿過開孔360,接著，電極螺絲600 將射頻電力傳輪臂300中之電極33〇鎖固在電漿輔助化學 氣相沉積反應室之上電極上，並透過金屬材料的電極螺絲 M432137 600電性連接電極33〇與上電極，使得電 傳輸臂300進入電聚辅助化學氣相沉積反應室中射頰電力 緣插銷2〇(W立於彎折部MO與電極螺絲_ 。間隙絕 本新型較佳實施例可知，制本新型具有ς。由上述 絕緣插銷之第1隔部與第二間隔部分職=。間隙 電極之間’以及電極與下接地端之間，以C與 電極之間的第-間隙，以及維持下接地端與電=地端與 -間隙。此_絕緣插銷尤其適用於配置在 間的第 臂之彎折段的後方，以避免因彎折段的上接地端力傳輪 下接地端之間的間隙過窄而產生的電容效應，二1電極與 輸更為穩定。 …使侍電力傳 用 雖」本新型已以—較佳實施例揭露如上 之精 之保 新型，何熟習此技藝者，在不脫c …範圍内’ t可作各種之更動與潤飾，因此 護範圍當視後附之申請專利範圍所界定者為準。’垔 【圖式簡單說明】 優點與實施例 為讓本新型之上述和其他目的、特徵、 能更明顯易懂’所附圖式之詳細說明如下： 第1圖為一 意圖 種習知的電漿辅助化學氣相沉積裝 置的示 例的示意圖 為本新型之射頻電力傳輪臂結構組裝時—實施 M432137 【主要元件符號說明】 100 :電漿輔助化學氣相沉積裝置 110 :射頻電力產生器 120 :匹配箱 130 :射頻電力傳輸臂 132、134 :接地端 136 :電極 140 :反應室 150 :上電極 200 :間隙絕緣插銷 210 :第一間隔部 220 :第二間隔部 230 :連接部 300 :射頻電力傳輸臂 310 :上接地端 320 :下接地端 330 :電極 350 :彎折段 360 :開孔 400 :間隙絕緣子 410 :卡榫 600 :電極螺絲 g :第一間隙 g’ ：第二間隙In addition to the aforementioned gap insulation pin 200 and force dragon arm, the "transmitting" arm structure further includes a gap insulator 隔, which is used to separate the ground terminal 310, the lower ground terminal 320, and the electrode 330. The gap insulator is distributed between the upper ground terminal 31 and the electrode 33 (), and is distributed between the ground terminal 320 and the electrode 33. The thickness of the gap insulator 400 distributed between the upper ground terminal and the electrode 330 is approximately the same as that of the first gap g to maintain the first gap g. The thickness on the insulator side of the gap distributed between the lower ground end 320 and the electrode 330 is approximately the same as the thickness of the second gap g to maintain the second gap g. The upper ground terminal 31, the lower ground terminal 32, and the electrode 330 have openings. The gap insulator 400 is disposed between the upper ground terminal 310, the electrode 33, and the lower ground terminal 320, and then passes through the upper ground with a tenon 410. The terminal 310, the electrode 330, and the lower ground terminal 32 are fixed to the gap insulator 400. Due to the relatively high operating temperature of the RF power transmission arm 300, the material of the gap insulator 400 is a high temperature resistant insulating material, such as ceramic or Teflon. The RF power transmission wheel arm structure is connected to a plasma assisted chemical vapor deposition reaction chamber (not shown in the figure 7F). The RF power transmission arm structure is connected to the upper electrode in the plasma assisted chemical vapor deposition reaction chamber. The RF power transmission arm structure further includes an electrode screw 600. The upper ground 310 has an opening 360 'for the electrode screw 600 to pass through the opening 360. Then, the electrode screw 600 passes the electrode 33 in the RF power transmission arm 300. Lock on the electrode above the plasma-assisted chemical vapor deposition reaction chamber, and electrically connect the electrode 33 and the upper electrode through the electrode screw M432137 600 of the metal material, so that the electric transmission arm 300 enters the electro-polymerized chemical vapor deposition reaction In the room, the buccal power edge plug 20 (W stands at the bending portion MO and the electrode screw _. The gap can be found in the preferred embodiment of the new model, and the new model has a ς. From the first compartment and the second of the above-mentioned insulating plug Spacer part =. Gap between the electrode 'and between the electrode and the lower ground terminal, with the -gap between C and the electrode, and maintaining the lower ground terminal and the electric = ground terminal and-gap. This _insulation plug is especially suitable It is arranged behind the bending section of the first arm in between to avoid the capacitive effect caused by the gap between the upper ground end of the bending section and the lower ground end of the force transmission wheel being too narrow. The two electrodes and the output are more stable. ... Make the waiter pass Although the "new model" has disclosed the above-mentioned best-guaranteed guarantee model in a preferred embodiment, anyone who is familiar with this art can make various changes and retouches within the scope of c ... so the scope of protection should be attached as a follow The scope of the patent application shall be defined. '[Simplified description of the drawings] The advantages and embodiments are to make the above and other objects, features, and features of the new model more comprehensible.' The detailed description of the drawings is as follows: The figure is a schematic diagram of an example of a conventional plasma-assisted chemical vapor deposition device. This is the assembly of a new type of RF power transmission wheel arm structure—implementation of M432137. [Key components symbol description] Device 110: RF power generator 120: Matching box 130: RF power transmission arms 132, 134: Ground terminal 136: Electrode 140: Reaction chamber 150: Upper electrode 200: Gap insulation plug 210: First spacer 220: Second spacer Part 230: connection part 300: RF power transmission arm 310: upper ground end 320: lower ground end 330: electrode 350: bent section 360: opening 400: gap insulator 410: tenon 600: electrode screw g: section One gap g ’: the second gap