TW430916B - Using focused ion beam technique to manufacture samples - Google Patents

Using focused ion beam technique to manufacture samples

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Publication number
TW430916B
TW430916B TW88118997A TW88118997A TW430916B TW 430916 B TW430916 B TW 430916B TW 88118997 A TW88118997 A TW 88118997A TW 88118997 A TW88118997 A TW 88118997A TW 430916 B TW430916 B TW 430916B
Authority
TW
Taiwan
Prior art keywords
ion beam
surface layer
characteristic feature
present
manufacture
Prior art date
Application number
TW88118997A
Other languages
Chinese (zh)
Inventor
Ying-Ju Li
Ding Jou
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW88118997A priority Critical patent/TW430916B/en
Application granted granted Critical
Publication of TW430916B publication Critical patent/TW430916B/en

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  • Sampling And Sample Adjustment (AREA)

Abstract

The present invention provides a method for using focused ion beam technique to manufacture small-area parallel lapping samples. The method utilizes a multi-stage ion beam milling process to manufacture samples used in the detection of the microscope. The present method first uses a high-flow particle beam to remove the upper surface of the sample thereby exposing the surface layer exactly covering the characteristic feature to be detected and thus defining a small window area including the characteristic feature. After the ion beam milling process is completed, the novel method disclosed by the present invention can further combine with the wet etching step. In the wet etching step, a three-dimensional surface layer including the characteristic feature will be exposed, and such a surface layer to be detected can be observed under a scanning electron microscope.
TW88118997A 1999-11-01 1999-11-01 Using focused ion beam technique to manufacture samples TW430916B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88118997A TW430916B (en) 1999-11-01 1999-11-01 Using focused ion beam technique to manufacture samples

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88118997A TW430916B (en) 1999-11-01 1999-11-01 Using focused ion beam technique to manufacture samples

Publications (1)

Publication Number Publication Date
TW430916B true TW430916B (en) 2001-04-21

Family

ID=21642854

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88118997A TW430916B (en) 1999-11-01 1999-11-01 Using focused ion beam technique to manufacture samples

Country Status (1)

Country Link
TW (1) TW430916B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109256312A (en) * 2017-07-13 2019-01-22 卡尔蔡司显微镜有限责任公司 Method for microscope sample to be prepared in situ
CN116157674A (en) * 2020-07-01 2023-05-23 应用材料以色列公司 Uniform milling of adjacent materials using parallel scanning FIB

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109256312A (en) * 2017-07-13 2019-01-22 卡尔蔡司显微镜有限责任公司 Method for microscope sample to be prepared in situ
CN116157674A (en) * 2020-07-01 2023-05-23 应用材料以色列公司 Uniform milling of adjacent materials using parallel scanning FIB

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Legal Events

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