TW430880B - Method for increasing process window by reducing side lobe - Google Patents

Method for increasing process window by reducing side lobe

Info

Publication number
TW430880B
TW430880B TW88122188A TW88122188A TW430880B TW 430880 B TW430880 B TW 430880B TW 88122188 A TW88122188 A TW 88122188A TW 88122188 A TW88122188 A TW 88122188A TW 430880 B TW430880 B TW 430880B
Authority
TW
Taiwan
Prior art keywords
patterned photoresist
side lobe
process window
base layer
adhesion layer
Prior art date
Application number
TW88122188A
Other languages
Chinese (zh)
Inventor
Sz-Min Lin
Jian-Li Guo
Hung-Nan Chen
Jiun-Liang Hou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122188A priority Critical patent/TW430880B/en
Application granted granted Critical
Publication of TW430880B publication Critical patent/TW430880B/en

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a method for increasing a process window by reducing the side lobe, which comprises: providing a substrate formed with a base layer thereon; forming a patterned photoresist that has been processed by a photolithography procedure on the base layer, in which a plurality of side lobes are formed in the patterned photoresist due to the use of a phase shift mask during the exposure; using a selective growing process to form a selective adhesion layer, which is only adhered to the patterned photoresist, on the top and sidewall of the patterned photoresist, thereby forming a stack structure by combining the selective adhesion layer with the patterned photoresist; using the stack structure as a mask to perform an etching process on the base layer; and removing the selective adhesion layer and the patterned photoresist.
TW88122188A 1999-12-17 1999-12-17 Method for increasing process window by reducing side lobe TW430880B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122188A TW430880B (en) 1999-12-17 1999-12-17 Method for increasing process window by reducing side lobe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122188A TW430880B (en) 1999-12-17 1999-12-17 Method for increasing process window by reducing side lobe

Publications (1)

Publication Number Publication Date
TW430880B true TW430880B (en) 2001-04-21

Family

ID=21643430

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122188A TW430880B (en) 1999-12-17 1999-12-17 Method for increasing process window by reducing side lobe

Country Status (1)

Country Link
TW (1) TW430880B (en)

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees