TW430864B - Manufacturing method of semiconductor device for eliminating antenna effect damage - Google Patents
Manufacturing method of semiconductor device for eliminating antenna effect damageInfo
- Publication number
- TW430864B TW430864B TW88108354A TW88108354A TW430864B TW 430864 B TW430864 B TW 430864B TW 88108354 A TW88108354 A TW 88108354A TW 88108354 A TW88108354 A TW 88108354A TW 430864 B TW430864 B TW 430864B
- Authority
- TW
- Taiwan
- Prior art keywords
- antenna effect
- manufacturing
- semiconductor device
- effect damage
- damage
- Prior art date
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
A manufacturing method of semiconductor device for eliminating antenna effect damage which not only discharges the excess charge generated during the plasma etching process but also prevents the antenna effect damage after the completion of the process. Furthermore, the present invention needs not to use additional masks or change special processing steps so that it will not increase the production cost. The invention can effectively prevent the antenna effect damage by conducting the positive and negative charges into the semiconductor substrate and an antenna effect monitoring structure for being discharged. Thus, it is able to effectively protect the device from antenna effect.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88108354A TW430864B (en) | 1999-05-21 | 1999-05-21 | Manufacturing method of semiconductor device for eliminating antenna effect damage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW88108354A TW430864B (en) | 1999-05-21 | 1999-05-21 | Manufacturing method of semiconductor device for eliminating antenna effect damage |
Publications (1)
Publication Number | Publication Date |
---|---|
TW430864B true TW430864B (en) | 2001-04-21 |
Family
ID=21640794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW88108354A TW430864B (en) | 1999-05-21 | 1999-05-21 | Manufacturing method of semiconductor device for eliminating antenna effect damage |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW430864B (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6828604B2 (en) | 2001-05-08 | 2004-12-07 | Sharp Kabushiki Kaisha | Semiconductor device with antenna pattern for reducing plasma damage |
US6978437B1 (en) * | 2000-10-10 | 2005-12-20 | Toppan Photomasks, Inc. | Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same |
US12080658B2 (en) | 2021-09-18 | 2024-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device with antenna effect protection circuit and method of manufacturing |
-
1999
- 1999-05-21 TW TW88108354A patent/TW430864B/en not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6978437B1 (en) * | 2000-10-10 | 2005-12-20 | Toppan Photomasks, Inc. | Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same |
US6828604B2 (en) | 2001-05-08 | 2004-12-07 | Sharp Kabushiki Kaisha | Semiconductor device with antenna pattern for reducing plasma damage |
US12080658B2 (en) | 2021-09-18 | 2024-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit device with antenna effect protection circuit and method of manufacturing |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6203657B1 (en) | Inductively coupled plasma downstream strip module | |
CN101490810B (en) | Photoresist stripping chamber and methods of etching photoresist on substrates | |
WO2004030012A3 (en) | Improved bellows shield in a plasma processing system,and method of manufacture of such bellows shield | |
EP1061580A3 (en) | Method and circuit for minimizing the charging effect during manufacture of semiconductor devices | |
GB2360629B (en) | Resin-encapsulated semiconductor device | |
TW429481B (en) | Process for treating semiconductor substrates and structures obtained by this process | |
WO2002065513A3 (en) | Photoresist strip with 02 and nh3 for organosilicate glass applications | |
TW200731380A (en) | Semiconductor wafer manufacturing method, semiconductor wafer double-sided grinding method, and semiconductor wafer double-sided grinding apparatus | |
TW200509249A (en) | Plasma processing apparatus | |
TW200618081A (en) | Method for reducing wafer charging during drying | |
WO2002058116A3 (en) | Integrated system for processing semiconductor wafers | |
TW430864B (en) | Manufacturing method of semiconductor device for eliminating antenna effect damage | |
TW200610173A (en) | Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors | |
KR20190066193A (en) | Wafer Sensor with Function of RF Noise Protection | |
WO2003010365A1 (en) | Plating method and plating apparatus | |
TWI264057B (en) | Semiconductor wafer with protection structure against damage during a die separation process | |
TW329023B (en) | Non-plasma halogenated gas flow | |
CN109300773B (en) | Surface treatment method of wafer | |
TW200601444A (en) | A method for simultaneous resist removal and charge releasing by using h2o plasma | |
TW200501176A (en) | Method for forming metal lines | |
CN101852994A (en) | Method for removing photoresist | |
TW430930B (en) | Method of preventing the trench from deforming after an ashing step | |
KR100476588B1 (en) | Processing chamber of etching facility for semiconductor fabrication | |
JPH0199220A (en) | Manufacturing equipment for semiconductor device | |
CN106298423A (en) | Plasma-etching apparatus |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MK4A | Expiration of patent term of an invention patent |