TW430864B - Manufacturing method of semiconductor device for eliminating antenna effect damage - Google Patents

Manufacturing method of semiconductor device for eliminating antenna effect damage

Info

Publication number
TW430864B
TW430864B TW88108354A TW88108354A TW430864B TW 430864 B TW430864 B TW 430864B TW 88108354 A TW88108354 A TW 88108354A TW 88108354 A TW88108354 A TW 88108354A TW 430864 B TW430864 B TW 430864B
Authority
TW
Taiwan
Prior art keywords
antenna effect
manufacturing
semiconductor device
effect damage
damage
Prior art date
Application number
TW88108354A
Other languages
Chinese (zh)
Inventor
Jen-Tsung Shiu
Yi-Jau Jang
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88108354A priority Critical patent/TW430864B/en
Application granted granted Critical
Publication of TW430864B publication Critical patent/TW430864B/en

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Abstract

A manufacturing method of semiconductor device for eliminating antenna effect damage which not only discharges the excess charge generated during the plasma etching process but also prevents the antenna effect damage after the completion of the process. Furthermore, the present invention needs not to use additional masks or change special processing steps so that it will not increase the production cost. The invention can effectively prevent the antenna effect damage by conducting the positive and negative charges into the semiconductor substrate and an antenna effect monitoring structure for being discharged. Thus, it is able to effectively protect the device from antenna effect.
TW88108354A 1999-05-21 1999-05-21 Manufacturing method of semiconductor device for eliminating antenna effect damage TW430864B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88108354A TW430864B (en) 1999-05-21 1999-05-21 Manufacturing method of semiconductor device for eliminating antenna effect damage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88108354A TW430864B (en) 1999-05-21 1999-05-21 Manufacturing method of semiconductor device for eliminating antenna effect damage

Publications (1)

Publication Number Publication Date
TW430864B true TW430864B (en) 2001-04-21

Family

ID=21640794

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88108354A TW430864B (en) 1999-05-21 1999-05-21 Manufacturing method of semiconductor device for eliminating antenna effect damage

Country Status (1)

Country Link
TW (1) TW430864B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828604B2 (en) 2001-05-08 2004-12-07 Sharp Kabushiki Kaisha Semiconductor device with antenna pattern for reducing plasma damage
US6978437B1 (en) * 2000-10-10 2005-12-20 Toppan Photomasks, Inc. Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same
US12080658B2 (en) 2021-09-18 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device with antenna effect protection circuit and method of manufacturing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6978437B1 (en) * 2000-10-10 2005-12-20 Toppan Photomasks, Inc. Photomask for eliminating antenna effects in an integrated circuit and integrated circuit manufacture with same
US6828604B2 (en) 2001-05-08 2004-12-07 Sharp Kabushiki Kaisha Semiconductor device with antenna pattern for reducing plasma damage
US12080658B2 (en) 2021-09-18 2024-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit device with antenna effect protection circuit and method of manufacturing

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent