TW429610B - Fabricating method of dynamic random access memory - Google Patents

Fabricating method of dynamic random access memory

Info

Publication number
TW429610B
TW429610B TW88113872A TW88113872A TW429610B TW 429610 B TW429610 B TW 429610B TW 88113872 A TW88113872 A TW 88113872A TW 88113872 A TW88113872 A TW 88113872A TW 429610 B TW429610 B TW 429610B
Authority
TW
Taiwan
Prior art keywords
shallow trench
substrate
random access
access memory
dynamic random
Prior art date
Application number
TW88113872A
Other languages
Chinese (zh)
Inventor
Jeng-Hung Li
Li-Je Chen
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88113872A priority Critical patent/TW429610B/en
Application granted granted Critical
Publication of TW429610B publication Critical patent/TW429610B/en

Links

Abstract

This invention is about a fabricating method of dynamic random access memory. After forming a shallow trench on a substrate to define an active region, an isolation structure is formed in the shallow trench. The first conduction layer is formed to globally cover the substrate and fill up the shallow trench. Part of the first conduction layer is removed and only the part located in part of the shallow trench is remained so as to form a bit line in the shallow trench. After that, the extruding portion is formed on substrate and is connected with bit line and the position, in which source/drain is to be formed, in an active region. Transistor is formed in the active region. The range of source of transistor includes substrate located under the extruding portion and source is connected with the second conduction layer. After forming a dielectric layer to globally cover the substrate, capacitor is formed on the dielectric layer, in which this capacitor passes through the dielectric layer and is connected with the transistor.
TW88113872A 1999-08-13 1999-08-13 Fabricating method of dynamic random access memory TW429610B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88113872A TW429610B (en) 1999-08-13 1999-08-13 Fabricating method of dynamic random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88113872A TW429610B (en) 1999-08-13 1999-08-13 Fabricating method of dynamic random access memory

Publications (1)

Publication Number Publication Date
TW429610B true TW429610B (en) 2001-04-11

Family

ID=21641912

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88113872A TW429610B (en) 1999-08-13 1999-08-13 Fabricating method of dynamic random access memory

Country Status (1)

Country Link
TW (1) TW429610B (en)

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees