TW429575B - Structure and method for enhancing the hardness of Al pad - Google Patents

Structure and method for enhancing the hardness of Al pad

Info

Publication number
TW429575B
TW429575B TW088120062A TW88120062A TW429575B TW 429575 B TW429575 B TW 429575B TW 088120062 A TW088120062 A TW 088120062A TW 88120062 A TW88120062 A TW 88120062A TW 429575 B TW429575 B TW 429575B
Authority
TW
Taiwan
Prior art keywords
pad
metal
forming
hardness
solder pad
Prior art date
Application number
TW088120062A
Other languages
Chinese (zh)
Inventor
Sheng-Shiung Chen
Tsu Shih
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to TW088120062A priority Critical patent/TW429575B/en
Application granted granted Critical
Publication of TW429575B publication Critical patent/TW429575B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

A stacking structure for enhancing the hardness of Al pad in the copper wire processing includes the following steps: firstly, forming a dual damascene on the semiconductor wafer having the active and passive devices; next, depositing the barrier metal in the dual damascene and using the electrochemical deposition or sputtering for the deposition of copper metal wire; after completing the main structure of the integrated circuit, forming a passivation with thickness about thousands angstroms and using a conventional photolithography etching process to etch off the solder pad metal area; then, using sputtering to deposit the TaN barrier/Al metal layer/TaN layer/Al metal layer and forming Al pad structure with enhanced hardness after anisotropic etching. In the stacking structure, because the overall thickness is only about 10k, it is easier to etch the solder pad. Furthermore, because the structure has sufficient buffer, the solder pad will not expose and oxidize the copper metal during probe testing or wire bonding.
TW088120062A 1999-11-17 1999-11-17 Structure and method for enhancing the hardness of Al pad TW429575B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW088120062A TW429575B (en) 1999-11-17 1999-11-17 Structure and method for enhancing the hardness of Al pad

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW088120062A TW429575B (en) 1999-11-17 1999-11-17 Structure and method for enhancing the hardness of Al pad

Publications (1)

Publication Number Publication Date
TW429575B true TW429575B (en) 2001-04-11

Family

ID=21643056

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088120062A TW429575B (en) 1999-11-17 1999-11-17 Structure and method for enhancing the hardness of Al pad

Country Status (1)

Country Link
TW (1) TW429575B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202017102022U1 (en) 2016-04-08 2017-05-04 Cheng Hsin Chuang Wire feed device for welding wires
CN112710877A (en) * 2019-10-25 2021-04-27 巨擘科技股份有限公司 Metal probe structure and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE202017102022U1 (en) 2016-04-08 2017-05-04 Cheng Hsin Chuang Wire feed device for welding wires
CN112710877A (en) * 2019-10-25 2021-04-27 巨擘科技股份有限公司 Metal probe structure and manufacturing method thereof

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MK4A Expiration of patent term of an invention patent