TW429547B - Damascene process - Google Patents

Damascene process

Info

Publication number
TW429547B
TW429547B TW88122878A TW88122878A TW429547B TW 429547 B TW429547 B TW 429547B TW 88122878 A TW88122878 A TW 88122878A TW 88122878 A TW88122878 A TW 88122878A TW 429547 B TW429547 B TW 429547B
Authority
TW
Taiwan
Prior art keywords
damascene process
copper
layer
metal
migration
Prior art date
Application number
TW88122878A
Other languages
Chinese (zh)
Inventor
Shi-Mau Shiau
Jiun-Lung Chen
Shin-Fa Lin
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122878A priority Critical patent/TW429547B/en
Application granted granted Critical
Publication of TW429547B publication Critical patent/TW429547B/en

Links

Abstract

A damascene process is provided, which adds, when using metal material such as copper, a layer of conductive material referred as a barrier layer between the copper and the other material, so as to prevent the open-loop of metal wires caused by too much electro-migration.
TW88122878A 1999-12-24 1999-12-24 Damascene process TW429547B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122878A TW429547B (en) 1999-12-24 1999-12-24 Damascene process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122878A TW429547B (en) 1999-12-24 1999-12-24 Damascene process

Publications (1)

Publication Number Publication Date
TW429547B true TW429547B (en) 2001-04-11

Family

ID=21643538

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122878A TW429547B (en) 1999-12-24 1999-12-24 Damascene process

Country Status (1)

Country Link
TW (1) TW429547B (en)

Similar Documents

Publication Publication Date Title
SG121686A1 (en) A method to create a copper dual damascene structure with less dishing and erosion
KR950032710A (en) Copper or Copper Alloy Treatment Composition
EP1600515B8 (en) Lead-free, free-cutting copper alloys
SG105455A1 (en) A method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion
ZA200006842B (en) Recovery of copper values from copper ores.
MY133320A (en) Plug
AU3495301A (en) Heterologous polypeptide of the tnf family
MXPA02000926A (en) Electroluminescent device and method for the production thereof.
HK1047818A1 (en) Low delay skew multi-pair cable and method of manufacture.
MY125124A (en) Low resistivity tantalum
AU3523200A (en) Methods of forming local interconnects and conductive lines, and resulting structure
MXPA05000270A (en) Non-uniform transmission line and method of fabricating the same.
DE69800106D1 (en) Corrosion-resistant, high-strength copper alloy with good punchability
TW200502423A (en) Vapor deposition of benzotriazole (BTA) for protecting copper interconnects
AU4858800A (en) Copper alloy
TW340975B (en) Semiconductor memory
ZA200110514B (en) Process for the extraction of copper.
WO2000015429A8 (en) Composite wire with noble metal cladding
TW200518265A (en) Copper damascene structure and semiconductor device including the structure and method of fabricating the same
PH30864A (en) Method and apparatufor the electrolytic productionof copper wire.
CA2264902A1 (en) High-strength erosion electrode
TW429547B (en) Damascene process
TW200620476A (en) Planarising damascene structures
AU1655000A (en) Material for producing a corrosion- and wear-resistant layer by thermal spraying
HUP0200449A3 (en) Method for producing an acid-resistant, electrically conductive building material covering

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent