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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW88122878ApriorityCriticalpatent/TW429547B/en
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Publication of TW429547BpublicationCriticalpatent/TW429547B/en
A damascene process is provided, which adds, when using metal material such as copper, a layer of conductive material referred as a barrier layer between the copper and the other material, so as to prevent the open-loop of metal wires caused by too much electro-migration.
TW88122878A1999-12-241999-12-24Damascene process
TW429547B
(en)