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Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW88114693ApriorityCriticalpatent/TW429503B/en
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Publication of TW429503BpublicationCriticalpatent/TW429503B/en
An optical measurement method for trench depth is applied to a substrate with a trench thereon in which the substrate surface is the first plane and the trench has a second plane with a depth. The method firstly uses the overall reflection index from the substrate by multi-wavelength measurement, that the overall reflection index is defined by a first actual reflection index for the first plane and a second actual reflection index for the second plate and the scattering factor; then, measuring the first actual reflection index of the substrate and calculating the scattering factor to determine the second actual reflection index. Because the trench depth is determined by the second actual reflection index, it can get the depth trench after obtaining the second actual reflection index.
TW88114693A1999-08-271999-08-27Optical measurement method for trench depth
TW429503B
(en)
Biological information collecting probe, biological information measuring instrument, method for producing biological information collecting probe, and biological information measuring method