TW426868B - IC probing device - Google Patents

Abstract

An IC probe and a method of fabricating the same are provided. The probe utilizes an array of probe structures that contact the contact pads of the IC, the IC package, or package transposer under test, thus allowing the probe to be used in a variety of applications ranging from IC testing and interrogation to IC burn-in. In one aspect, the individual probe structures utilize a cantilever design. One end of the cantilever is coupled to a probe substrate while the second cantilever end is used to couple to an IC contact pad directly or via a probe contact tip. The probe tip can be fabricated from a variety of different metallic materials utilizing various shapes. For example, the probe tip can be made from a hard metallic alloy, a soft metal overlaid with a harder metal, or a composite that includes particles of a hard material. The cantilever can either be parallel to the surface of the substrate or it can bend away from the probe substrate, thereby providing an increased distance between the end of the cantilever and the probe substrate and a corresponding increase in scrub distance. The bend in the cantilever is achieved either through the use of a multi-layer cantilever design, or by controlling the deposition process, or by some combination of the two. The end of the cantilever coupled to the probe substrate can utilize a cantilever mounting post. In another aspect, the probe structures are comprised of depressible members coupled to the probe substrate via a pair of posts. The pair of posts enhance probe rigidity, although typically at the expense of probe depression distance. In this configuration, the probe contact can either be attached to the center of the depressible member or offset from the center. The center probe contact is best suited for applications that only require z-direction compliance while the offset contact works better in situations that still require contact scrubbing.

Description

This invention relates to a kind of 1C and its packaged electronic probe. The present invention relates to a contact pad (con ^ a ^ pad), bump, and ball brake array (bal grid arrb), multi-chip module packages, multi-chip transposers, or similar devices, or IC packages. The IC probe is a tool for temporarily contacting a chip in a chip with a test system, and 1C can be any type (such as a signal processor). The test system can be designed for For testing electronically burned (electrically burn-in), otherwise it is not connected to the whole 1 (: or a part of 1C, or all IC groups. Because of these ideal applications, ICs can be used on wafers, wafers, or The test is performed in a packaged state. Similarly, a packaged probe can be defined as a device used for short-term contact between the package's interconnect structure or the packaged 1C device and the test system, and the package can be, for example, a multi-chip Form a package, a multi-chip closed array package, ... a chip-level package. And the test system is used to test the electronic thermal target (burn_in), otherwise it is not connected to the whole, or a part of 1C, or all IC groups. Until Various technologies have been developed to detect ICs; the standard method is to use an array of tungsten wires extending from the probe and placed on top of each other, each of which is precisely configured to match the 1C The contact of the bonding pad. Since the probe is in contact with the tungsten wire array system and 1C to test it, each wire will mechanically scrub to a small part of the bonding pad, so it penetrates the bonding pad. Thin oxide layer, this friction action is attached to each wire

V. Description of the invention (2) A good, low-resistance contact occurs at any time between the joint and the joint. When the bonding pads are relatively fine micron) and lined up around the IC, the probe works best when it is silver. The 1c detection method for the contact oblique = ί is used to connect the small transparent film on the elastic plastic film; 此; the probe contact film is a probe by supplying-air pressure to-contraction system: tend to and IC The bonding pads are in contact with each other and one side wall of the chamber is a " elastic plastic film. Because both sides of the pressure chamber are transparent, the alignment of the probe contact array and the bonding pad of 1 (: is relatively easy. When inspecting the wire probe, 'the probe's contact has not rubbed the 1C bonding pad.' The dual probe contact may be used to make contact with each 1 (: bonding pad so that a voltage may be applied between the double probe contacts, thereby penetrating the surface oxide layer. The probe film is made of gold on the bonding pad surface. Or other heavy metals work best when formed. Other methods for detecting a circuit are disclosed in US Patent No. 51 52695; in the disclosed system, an array of rod spring arms (array of cantUevered spring arm) is extended from the surface of the probe in an inclined state, and each spring arm has a contact surface. When the probe and the circuit board are put together, they are in contact with the bonding pads of the circuit under test. .Because the distance between the probe and the circuit board is reduced, each support rod spring arm array is rubbed to a part of the complementary pad, thus providing a good contact point. In one embodiment of this system, this Explore The pin system is designed to be used in a circuit, wherein the bonding pad has a space of lmH1. U.S. Patent No. 5323035 discloses a method using a plurality of conical embedded structures (Pyramidally shaped insertion

V. Description of the invention (3) struction), probe, and the embedded structure corresponds to the junction of IC for testing. The structure of the yongjin structure is metalized to make electrical contact with the bonding pad of IC. In use, the embedded structure of this probe is first aligned with the joint of 1 (:, as long as it is aligned, the probe is pressed toward the IC, so that a single embedded structure penetrates the bonding pad and passes through The surface layer is oxidized and damaged. Although this technology causes damage to the bonding pad, this damage may be useful because it may increase the contact area between the embedded structure and the bonding pad. US Patent No. 56 1 386 1 The middle system discloses a probe that uses a plurality of lithographic patterns of spring contact points; each spring contact point is fixed at one end of the substrate, and the second contact end is not fixed to the connection pad on the contact 1C. Because the spring contacts are inside For the stress gradient, the end point of each spring contact that is not fixed is far away from the substrate. Therefore, even if the height of the bonding pad changes, the spring contact point still maintains physical contact with the 1C bonding pad. It can be clearly known from the conventional technology. A rugged 1C probe that can be used for 1C with a large number of bonding pads. The present invention provides a 1C detection device and a method for manufacturing the same; the probe is The array is constructed with probes that touch the IC's bonding pads, so that the scope of this probe can be used from the IC test heat handle. And this probe uses microelectromechanical (MEMs) manufactured using traditional semiconductor process technology. Structure. In one concept of the present invention, 'the probe structure is directly manufactured on a test substrate, and the substrate is coupled to a probe interface board, which in turn is coupled to a probe mounting board. The substrate can be various Made of different materials, and each substrate provides its own advantages' from special characteristics to cost and manufacturing

5. Description of the invention (4), each degree of ease. Suitable substrates include transparent needles, insulating materials, which provide easy separation between probes, probe signal paths, and pin contact points (such as ceramic magnets). ); Can provide such as? Holding substance (such as quartz); can provide high heat conduction force '(such as bonds); and-Rouer's substrate, which can provide large in the Z direction: change ~ polyurethane). This probe interface board can be made of a conductor (K Da Leng Cheng, or-semiconductor (such as sand or sand)). In contrast, the test electricity: === and; for low impedance and high Operating speed β This probe interface: Lightly fits on the probe mounting ★, so the probe surface can be easily aligned with the wafer surface. In other concepts of the present invention, each probe structure can be It is placed on the line to control the impedance structure, and it is composed of metal and insulating AC layer. The impedance control structure improves the operating speed around I c. In other concepts of the present invention, each probe structure uses a support structure. Design; one end of the support rod is coupled to a probe structure and the second support rod end is used to directly couple an IC bonding pad. The contact end of the probe that contacts the free end can be made of various gold Made of, the general probe contact end is made of flexible metal (such as copper) = upper-harder metal (such as Yan). In addition, the probe contact end can be made of metal. Gold (such as nickel-molybdenum alloy) or Includes harder metal compositions (such as nickel toilet carbon dots) Is made. Then, the probe contact end may be metals such as nickel, wherein the titanium-based or carbon ion implantation, for example, to provide a metal and is configured so as to amorphous silicon ,,

Yu ii 懿 with. & The support rod can be designed as a parallel curve. Therefore, the design of the control rod or the combination of the control rods when the probe is pressed to the base ==== :: The multi-layered support for LS can be combined with the substrate through a support column. = Ϊ 触; touch the support column '1 is made by a separate manufacturing process. First = = 糸 „the turning force between the base plate and the supporting rod; then the technical decision: the material characteristics of the supporting cup supporting column can be tailored to other needs in other concepts of the present invention. The structure of the probe includes -Pair and post are coupled to the compression element of the probe substrate; although at the cost of reachable probe compression distance, the pair of support systems strengthen the probe with a better fixing force than the support rod. In one embodiment, this The probe contact points are coupled in the compression element. “K contact points create a limit on the lateral displacement of the probe contacts, and are therefore ideal for situations where only the Z direction is needed around the array (such as BGA). In other concepts of the present invention, the contact point of the probe is deviated from its center point; the contact point of the probe located at the center is the position of the center point of the contact deviation element. In this embodiment, due to the deviating contact, the probe The contact point of the needle will move sideways, thus providing an ideal frictional action to achieve low resistance contact with the I c probe and movement in the z direction. In order to make the above-mentioned objects, features, and advantages of the present invention more obvious and easy, only ‘a preferred embodiment’ is given below in conjunction with the accompanying drawings for detailed description.

V. Explanation of the invention (6) The following is a brief description of the 26 ^ 6 芑 diagram: Figure 1 is a cross-sectional view of the 3 probe structure according to the present invention. · Rod probe structure (cantilever Figure 2 is two Figure 3 is a top view of the structure of a 1C joint pad and a # 2 probe; Figure 4 is the furnace in Figure 3: the initial diagram of the ten contact; Figure 5 of the needle structure under pressure is a diagram of a probe structure and is made away from the probe substrate after being pressed. Figure 6 is a diagram of a probe structure. The structure of the support rod probe of the needle substrate is moved away from the probe by pressing away from it. It is also added from the support column of the substrate but except for the probe but except for contact. Figure 7 shows the use of a pair of support columns. Probe structure diagram. Figure 8 is similar to the probe structure diagram shown in Figure 7 except that the center part is not flat. Figure 9 is a probe structure diagram similar to that shown in Figure 8 It is not beyond the condition of the midpoint between the two support columns; FIG. 10 shows a simplified probe substrate according to the present invention. FIG. 11 is FIG. 1G A cross section of an embodiment of a probe substrate structure diagram located in the interface of a probe board is on a substrate. FIG. 12 is a diagram of a probe board shown in FIG. Η ′, which is assembled on a probe. And FIG. 13 is an embodiment according to the present invention. V. Description of the invention (7) Manufacturing of Luge: The process steps of rod probes are symbolic and cute. 1 〇 Support rod probe structure 1 〇3 support column 10 7 Probe contact point 111 Resistive plus lyre W, m support: 303 bonding pad 3 0 7 Probe structure 401, 403 direction mark 5 0 3 Probe contact point 507 Support column 603 Support column 605 substrate in normal state 7 01 Probe contact point 705 Substrate 801 '901 Contact point I 0 01 Substrate 1005 Double support column Probe structure 1008 Two probe contact points 1011 Bonding pad II 0 1 Probe board interface board 11 0 5 Active test circuit element No. 1 The picture shows a single sheet according to the present invention—101 substrate 1 〇5 support rod 10 9 insulation layer 2 〇1, 2 0 5 pin structure 3 01 probe contact point 305 1C 309 substrate 5 01 support rod 505 substrate 6 0 1 support branch 6 〇7 support lever 703 contact support element 7 0 7 support 枉 803, 903 probe support structure 100 3 Support rod probe structure 1007 Four probe contact points 1 0 0 9 Probe contact points 1 〇 1 3 Signal path 1103 Fixture

$ 11 Section of Supporting Rod Probe Structure 〇〇〇

V. Description of the invention (8) Figure 'Designed according to Xing Bei & Axle Man's needle plate system including tens to hundreds to thousands of probe structures' and the probe structure shown in Figure 1 Only basic probe types are drawn. The probe structure 100 is in contact with the base flOl forming the base of the probe board; the structure 101 includes a support post 103, a support post 105, and a 2-pin contact point 107. Since this probe is only supported by the support column 103, when the probe card is aligned and pressed toward 1 (: bonding pad (not shown), this support rod can freely flex toward the substrate 101. The substrate It can be made of various materials; in this preferred embodiment, the substrate is made of a transparent material such as glass. The use of this transparent material allows the probe structure to be easily aligned. Quasi 1C bonding pads, in addition, one or more alignment structures can be used to align the probe card with the c bonding pads, and the use of this alternate study is a non-preferred example due to additional Manufacturing complexity and the degree of alignment required to reach Shida. For an example in the alignment system, a series of wafer surface defects (dimples) formed on the supporting structure of the wafer correspond to the probes, and the Protrusions, therefore, represent that these two structures are used for alignment of Shida. Various alignment or alignment technologies are available in semiconductor device types, such as probes, which are tested on wafers. Is used to operate a probe card, which is known by this technique, and will This will not be repeated in the present invention. In at least one embodiment of the present invention, the substrate 101 is made of an insulating material such as glass or ceramic; the use of this insulation simplifies the isolation of a single In contrast, if the substrate 101 is composed of a conductor, an insulating layer 109 must be deposited on the substrate 101 to isolate a single probe from its corresponding probe. needle

V. Description of the invention (9) Day-to-day In the example of the board, the support pillar 103 is composed of an insulator, which is coated with a metal layer on at least one side wall. In other embodiments, the 'substrate 101 is composed of either a single layer or a multi-layer flexible substrate. For example, the substrate ιοί may be made of polyimide, benzocyclobutene, or a similar material. One advantage of using a flexible substance is that it allows the probe to make large adjustments to changes in the z direction: for example, local changes greater than 50 microns in the z direction, preferably greater than 100 microns; when 1 ( ;: Such a change may occur when a problem arises when using a micro-spherical gate array (mi Cr0-BGA). In one embodiment, the substrate 101 includes a resistive heater 111, It is located on the back of the substrate 101; assuming that the substrate is made of a thermally conductive material, such as beryllium oxide, the probe can provide a uniform heat to the wafer during the test; if the test wafer It has thermal energy itself, or the wafer mounting system includes a wafer heater. It is best that the probe is designed to provide temperature detection. In a preferred embodiment of the present invention, the support column The support rod 105 is made of a single piece of material; this structure provides a better strength between the interface between the two components. On the other hand, the support rod 103 can be separated from the support rod 105. And shaped by another substance The support pillar 103 can be made of a metal 'such as copper or nickel' or a dielectric substance coated on at least one side of the material according to the selective manufacturing technique or a substance including the substrate 101 and the support rod 105. 'As polyimide, hard positive photoresist, made by Teflon

Page 13 V. Invention Day 4 (迖) 268 6 8-j. The height of the support pillar 103 is preferably between 10 and 30 microns, and any size larger or smaller than the third class of the present invention can be used. If the support column j 〇3 uses a high% emulsion-based resin (ep〇Xy) to the photoresistance aspect ratio, it is from M1Cr〇lith〇graphy Chemical Corp〇rati〇n 〇f N ^ wto ^ n, The height of SU-8 'of MA can be made higher than 100 microns; this higher height can increase the length of friction. The supporting rod 105 can be used in various ways depending on its ideal application. »The second figure is a top view of the two probe structures; the probe structure U201 has a supporting rod element with a uniform width 2 〇3, in contrast, the probe structure 205 has-the support rod element 2 of uneven width 2 ^ As shown in the figure, the width of the piece 207 is between the support rod and the support column] 〇 The width between the interface is greater than The width of the contact point is 07. The support rod 207 is best applied to a high degree of K accumulation. Ignoring the design of the support rod, it is only the width of the support rod, at least on the contact end of the probe. 1 (: driven by the width of the pad and its accumulation. The support rod 105 is preferably made of a metal such as copper, nickel, or an alloy such as copper or an alloy of nickel and cobalt, molybdenum, or tungsten. The support rod 1〇 5 can also be made of a metal such as titanium implanted with titanium and / or carbon ions, thereby improving the contact characteristics of the support rod. This finding is best used when the support rod does not include the contact point 107. The choice of support rod material and its thickness are based on the ideal support rod stiffness ; For a known support rod material, the increase in elastic force at the contact end of the support rod is due to the three-dimensional thickness of the support rod; therefore, increasing the thickness will result in greater elasticity and improve the probe contact point 107 in friction 1 (: The energy of contact V. Description of the invention, (1¾ 268 6 8 = As before, the oxide layer and other pollutants are formed as a layer at the 1C level. The probe must penetrate to obtain a good, low-resistance contact. County The function of the probe plate and the ability of the probe to rub 1C to obtain contact. In the preferred implementation of the present invention, the elastic force at the contact point of the support column is at least 0. gram force. Figures 3 and 4 indicate the related effects of the probe ^ contact 3G1 and IC3G5 1C junction 303 when the probe structure 307 is pressed; as shown in Figure 3 X ', although the probe has not been pressed Structure 'probe contact point 301 is connected by disk: f303 contact. As shown in the figure, this probe structure 301 is far away from the substrate 309 in its normal and unacceptable state; Move 401 relative to the direction 309 of the probe plate 309. This probe structure 307 is oppressed at least 5 &amp; / S 'and preferably between 10 and 20 microns. In the second person oppressed by the support rod, the tip of this probe contact point 301 moves along the joint pad 303 along the direction = 403, so it rubs The surface of the joint. This probe moves: The amount of friction caused by the contact is several factors. The main # is the initial probe = the contact position (that is, the degree of overrun and the initial probe position on the substrate surface). ), The height of contact with the probe on the surface of the support rod. Well, the probe contact point 301 | has a lateral shift of at least a few microns, which is between 1 and 5 microns. The rod structure is made of inverted or nickel as described above, and the support rod 105 can also be composed of a multilayer structure; for example, an impedance control device '<# 杆 1〇5》 is good to be made into a long and thin strip (ffllCrOStr ^ P). The bottom layer of this slender support rod is a conductive ground plane layer, which is covered with a dielectric substance such as polyimide or Teflon. This third layer

V. Description of the invention (12) ''-is a metal strip of Chuan Bei #, which covers the dielectric substance; generally, the width of this dielectric layer is narrower than the metal layer below it. The plan view of the rod structure is a simple three-layer metal / dielectric layer / metal structure. In addition to this microslim design, other controlled impedance structures are also used. For example, an elongated strip may replace the microstrip; in an elongated strip configuration, its cross-sectional view has five layers, that is, metal / dielectric layer / metal / dielectric layer / metal. The probe contact point can be made of a variety of metal materials using various tip shapes; for example, in Figures 3 and 4, it is shown that the tip of the probe contact point 301 is a circular contact surface area ; And other shapes can also be used. The shape used is mainly formed by the manufacturing technology used. In at least one embodiment of the present invention, the contact point is composed of either copper or nickel 'and is covered by a harder metal such as tungsten, molybdenum, iridium, or rhodium. The covered metal can be formed using electroplating or vacuum deposition techniques; although it is not necessary to cover a hard metal ', it is best to have the device to provide a good friction surface and be sure to maintain a probe with a long life . In another embodiment, the entire contact is made of a hard metal such as an alloy of ball and diamond, molybdenum or tungsten; in other embodiments, the contact point 107 is a nickel composition. Alumina, silicon carbide or poly cry st all ine diamond are deposited together with nickel. In other examples, the probe contact point 107 is made of metal floc, such as nickel, and implanted with titanium and carbon ions' to represent the amorphous silicon structure of the metal and improve its wear and contact properties. In other embodiments, the probe structure 100 does not include a separate probe contact point 107; in this embodiment, the tip portion of the support rod 105 generates a probe contact function.

P.16 5 The thickness of the contact point 107 is preferably slightly, if the support pillar 103 is about 20 micrometers: thickness 103, for example, 30 micrometers thick. The contact point 1 07 is approximately 25 to 5 and the figures 9 to 9 indicate that the construction is similar to that in FIG. 5 except that the support rod 501 &lt; contact point ^ base probe is configured; This supports the curved surface ;:, formed by different internal mechanical stress between manufacturing = the side of the rod 501 has a different stress from the other side. In general, the techniques of compressing and changing the temperature are used to change the temperature of the deposition ^ force rapid drought, or some combination and * 'stress reduction can also be used: rigid layer support #' and use substances with different internal mechanical stress; right support rod 501 has sufficient curvature to support the column structure 507 in a static state while reducing the frictional distance.

As just mentioned, one method of controlling the bending of the support rod is to control the rate of metal electro-deposit deposition; this rate can be controlled by using electroplating current density and bond deposition ', so its internal stress is initially suppressed and then stretched (Tensi 1 e); The relative 'initial stress is extension, which will gradually become larger as the plating current density increases'. A large factor in the change in tension is the precise galvanic chemical deposition, for example, in M &amp; T

In the plating solution of nickel sulphamate manufactured by Chemicals Inc. of Pico Rivera, California, an additional role, SN-1 (also manufactured by M &amp; T Chemicals Inc.), enhances the change in stress. This extra agent increases the plating current density ’from 20 amps per square foot to 100 amps per square foot, thus causing

P. 17 The change in the two stresses caused it to exceed _ from the suppressed J-squared squared. The tension of pounds ^ SN: 1 = two increase for the side? The density of electroplating has been increased from 50 amps per square foot to female per square foot. This tension will exceed 16,000 pounds per square inch from 80 thousand cubic inches.加 主母 #Strengthen the degree of support to keep the ridges away from the substrate. The support can be made into a curved shape; for example, such as 筮 R 阁 # _ 士 1 support column and 603 Η 梅 水 is as the sixth As shown in the figure, the support column 601 is at an angle to the normal state, and is close to the substrate 605. In addition, in this embodiment, therefore, the case where the US is uneven is similar, and θ is added to the distance between the substrate and the contact point. Figure ^ shows the structure of the probe structure using the two-story structure; as shown in Figure S. The T1 pin contact point is located at the center of the contact support element 703, which is too fragrant. The "703" is connected to the substrate 705 through a pair of support posts 707. One disadvantage of the embodiment is that the The pair of support bars 707 is in its exploration pattern. It is considered that more space is needed, so it is harder to reach the actuality of the high-integration probe / the structure of the probe structure shown in Figure 8 is similar to Figure 7; in column 803 &gt; tb'- The probe contact point 801 is located on the uneven support element in the central part of the support element 'as shown in the figure'. The support column system is combined with the component 803; for example, the surname can be separated from the support column similar to Figure 7 Flat support element 803. The double support column probe structure shown in Figures 7 and 8 of ChengLiang 2 will be made to the friction 1C address because the contact point is located at the central part of the support element; Assumption—The shipcan contact is in contact with the probe The points are extended toward the substrate in the general condition (as shown in Fig. 8), and the contact point 801 is slightly changed, which is tied to the side

Page 18 Two up. So why two? Shi: The movement of the probe tip in j is mainly restricted in the Z direction. This restricted movement is limited to the π-shaped gate array in application. Element 803 and any required ± This is required, such as the combination of ball element 703 and support column 707) Keli 3, (that is, the thickness in Figure 7 is similar, 叾 中, ㈣ 机 __ 早 钱 则〇Micron change, so after the completion of the system-the upward slope ° on the other side to change the existing little compression stress of the most * progress', and a hybrid electric key J and plating can be with a little internal tension or neutral 廄 &quot; The total thickness of the top electrical layer is about 1. micron. Stress-co-deposition, and the two layers can have: Ran; the Z-direction probe is possible in some applications: use 'in most applications, When the probe is pressed, the contact point = direction friction is an important characteristic. The invention shown in Figure 9 is one of the invention, m is similar to Figure 8, except that the probe contact point 901 is deviated from the probe. The support 3 is made beyond the midpoint of 90S. Therefore, when the probe contact surface is pressed, it will have some necessary, side-to-side changes. Figure 10 represents a simplified detection substrate 1001 according to the present invention; As shown in the figure, this board includes seven probes supporting the structure of the probe. Needle structure 1 005. The size of this probe structure has been greatly expanded, and a single probe structure can include tens to hundreds to thousands of probe structures, as shown in the figure, four probe contact points 1007 are located in one The contact line (contact 1 ine) and the two probe contact points 1 0008 are located on the second contact line (although some contact patterns are along the periphery of Ic, there are contact patterns for other arrays). It is also used as a probe contact board for two probe contact points 1009 at the center.

Page 19 (16) All the probe contact points are electronically coupled to the _link probe contact board connection pad 1 0 11, which allows this test system to do with 1C coupled to the probe contact points 1007-1009 connection. As shown in the figure, the bonding pad 1011 may be located on one side of the substrate 1001. In addition, the bonding pad 1011 may be located on the other side or both sides of the substrate 1001. The 'fed-through' with respect to the other side of the probe structure can also be used to couple the two sides of the substrate 1001. There are many ways to provide a path between the contact point of the probe 1007_1〇09 and the connection pad 1 10 1 1 103. For example, the metal used to form the support rod structure is forming a support rod and a double support. At the same time, the pillar structure can be deposited on the substrate. In other concepts of the present invention, part of the circuit design may be included on the probe board as shown in FIG. 11; as shown, the substrate 1001 is coupled to the probe board interface board 1101. The pin structure size and manufacturing are simple. The test position can be manufactured on a single-substrate 001, which can immediately test more than 1C.掇 斜 柘 g Your early probe card. The probe card 1101 can be made from a single piece of material. Set of circuit boards (Printe "b0 ... CB) / or fixtures 1103, for example, in two or more probes The plate is aligned with the line through the hole. As shown in Figure 11, 'Fixture 1103 is a gold contact probe board 1 1 0 J, which is an active test test element placed on this probe board = Road. Part 1105, the coupling between 1C, s 卩 Fu Wu test circuit design and κ hazard under 4, can reduce noise and improve its τ: design element 1105 can also be placed on the substrate _, its electrical Around the field, it is the contact probe structure on the contact substrate that is cut off == Test Page 20 —426B6B --- 5. Description of the invention (17) and 'The substrate 1001 can be made of silicon or gallium arsenide, and the test circuit design 1105 Directly integrated in this substrate. In addition to testing and connecting the IC, the present invention, with or without active element 1105, can be used in a 1C thermal target system; in a 1C thermal target, the 1C undergoes a Or more temperature changes, according to the present invention, in a probe configuration 'due to the robustness of the support rod or dual support column design, because Temperature change 'This probe's contact point will not leave the corresponding 丨 c bonding pad, for example, the ambient temperature is 200 or 300 ° c. And in order to avoid walk-off, the thermal expansion coefficient of the probe substrate 1 0 0 1 must be very Coefficient of thermal expansion near c under test. For example, if this system is a silicon thermal target for IC, it is best that the probe substrate is also made of silicon. Figure 1_2 is as shown in Figure 丨 丨A cross-sectional view of an embodiment of a probe card; as shown in the figure, the probe card 1101 is in contact with a thicker probe plate 1201, and the probe plate 1201 is either a pcB or another mounting plate. 1201 is in contact with the probe card 1101 by passing through the fixing 1103 and the inlay screw 1 203. Between the probe card 1101 and the flat plate 20. 1 is a compression 1205, The compressed object 1 2 0 5 can be made of an elastic object ^ or = simple compression spring. The compressed object 12 05 makes the substrate 11 0 1 Ϊ ί ί Ξ probe structure by the screw 1 203 simple tightening or Relax and do: '. To ensure that the surface of the probe card is level with the wafer during the test, flattening is very heavy The probe structure can be manufactured using good semiconductor process technology. For example, the process steps of this large-scale process have been relatively advanced; for example, in at least one embodiment of the moon, the support rod and the support structure are on page 21A. 2 ^ 1 8 V. Description of the invention (18)

Fabrication and tip structures are formed by vacuum thin film deposition and keys passing through a photoresist mask. Although vacuum deposition is a preferred method for thin film deposition, other known techniques such as chemical vapor deposition (cvp) are also widely used. According to an embodiment of the present invention, the manufacturing steps of the plurality of probe supporting rods are shown in FIG. 13; this process assumes that the substrate 1001 is made of broken glass. If a quartz substrate is used, this process The first three steps (ie steps &amp; 1301, 1303, and 1305) are unnecessary and can be omitted. The process described in Figure 13 also assumes the use of a simple metal probe structure instead of the previous multilayer control impedance structure. The first step in this process is to define a pattern on the substrate using a positive photoresist film (step 1301); the pattern of the photoresist is based on the area on the substrate that needs to be metallized, for example, the signal path 丨 〇 丨3 and the area directly below the support pillar structure (that is, structure 10 in Figure 1, = 07 'in Figure 5 or "structure 6 {) 1 in Figure 5. After patterning, you should Glass (step 1 303), and remove the photoresist (step 1305). These three steps are necessary for the glass substrate in order to provide a table for the metal layer to be deposited: 'And many materials (such as quartz, Ceramic magnetic, etc.) does not require these three steps. When the required surface is prepared, the substrate is deposited on the surface of the substrate and then deposited in step 1307) 'for example, a titanium-nickel or titanium-tungsten-gold layer can be Sputtering has a surface of 2 and its thickness is between 200 and 1 0000A. After deposition, the substrate can be formed as needed to support the area of the pillar structure = its step 1 309), and the best graphics Is using 3. micron-thick Zhengguang 'This support is based on nickel-plated metal plate to a required height

Page 22 5. Description of the invention (19) (ie, 25 microns) (step 13U); the ideal process is the nickel sulphamate electroplating process. The thickness of this support pillar is determined by the plating time, temperature, and current supply; it is best to deposit a thin film of titanium (200 to 2000A) on the nickel support pillar (step 1313) . After the support post is completed, a positive photoresist with a thickness of about 25 micrometers is applied and the pattern is defined (step 1315); this pattern is used for the support post structure. It's better that the support rod uses nickel sulphamate key bonds to the required height (ie, 20 microns) from the nickel metal plate (step 1317), and it is best to use the key on the recording support rod. A layer of gold (i.e., 1 micron) (step 1319). After the deposition of the support rod is completed, a positive photoresist with a thickness of about 35 micrometers is applied, and a pattern of a probe tip is defined (step 32); preferably, the probe tip is made of nickel suiphainate. Electroplating a nickel metal plate to a desired height (ie 30 microns) (step 1 323) and plating a thin film of hard metal such as germanium (ie 2 microns) on the nickel probe tip (step 1 325) ). Then remove the photoresist of the top two layers (step 1327), and etch the titanium-nickel film in step 1313 (step 1329), then remove the photoresist of the bottom layer (step 1331), and etch in step Ti_Ni or Chin-tungsten-gold underlayer in step 130 (step 1 333). Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to be used for deciding on the invention. Any familiarity with this technique ♦ can be modified and retouched without departing from the spirit and scope of the present invention. The scope of protection shall be determined by the scope of the attached patent application. Page 23

Claims (1)

Page 24 6. Scope of patent application It is formed by one of the surface alloy and copper-tungsten alloy. 5 'The device according to item 1 of the scope of patent application, wherein each compression element comprises a multilayer structure, wherein the multilayer comprises an alternating layer of a dielectric material and a metal, wherein the dielectric material is selected from Polyimide, benzocyclobutene, and Teflon, and the metal is selected from copper, nickel, nickel alloy, nickel-molybdenum alloy, nickel-tungsten alloy, copper-cobalt alloy, copper-molybdenum Alloy and copper-tungsten alloy. 6. The device according to item 1 of the scope of patent application, wherein 'the plurality of compression elements have a displacement of at least 5 micrometers in the vertical direction with the corresponding 1C bonding pad during the entire compression process, and wherein each 1C contact Some parts have a displacement of at least 1 micron in the lateral direction and the corresponding IC bonding pads. 7. The device according to item 1 of the patent application scope, wherein the plurality of supporting pillar structures are approximately 2 and 30 microns thick. 8. The device according to item 1 of the scope of patent application, wherein '' further comprises an inductive heater coupled to the substrate. 9 _ The device according to item 1 of the scope of patent application, wherein the plurality of compression elements are impedance control devices. 10. The device according to item 1 of the scope of the patent application, wherein each of the compression elements is coupled to a pair of support pillar structures. 11. The device according to item 1 of the scope of patent application, wherein the plurality of contacting portions further include a plurality of probe contacting ends, wherein 'the plurality of probe contacting ends are defined by the compression of the support column structure against the compression. The off-center part of the element is combined with the complex shrink element. Page 25