4 2 5 β 2 〇 I621TW.F/Vic/005 ^7 _Β7 ___ 五、發明説明（/ ) 在半導體製程技術中，表面平坦化是處理高密度微影 的一項重要技術，因沒有高低落差的平坦表面才能避免曝 光散射，而達成精密的導線圖案轉移（Pattern Trans-fer)。平坦化技術主要有旋塗式玻璃（Spin-OnGlass ; SOG) 法與化學機械硏磨法（Chemical Mechanical Polishing ; 經濟部中央標率局貝工消费合作社印製 ' CMP)等二種；但在半導體製程技術進入毫微米（Sub-Half-Micron)之後，旋塗式玻璃法已無法滿足所需求的平 坦度，所以化學機械硏磨技術是現在唯一能提供超大型積 體電路（Very-Large Semiconductor Integration; VLSI)，甚至極大型積體電路（Ultra-Large Semiconductor Integration ; ULSI)製程，“全面性平坦化（Global Planarization)”的一種技術 。化學機械硏磨技術來自於 IBM 公司，已成功地應用在IBM微電子部門所開發的諸多產品 上。因爲化學機械硏磨技術極可能是將來半導體業者唯一 必須仰賴的平坦化製程，所以目前各半導體相關之工廠與 硏究機構，大多全力的開發化學機械硏磨技術，以便維持 往後競爭優勢。基本上，化學機械硏磨技術是利用機械硏 磨的原理，配合適當的化學助劑（Reagent)與硏磨粒，將 表面高低起伏不一的輪廓，一倂加以“磨平”的平坦彳匕技 術；若各製程參數控制得宜，化學機械硏磨法可以提供被 硏磨表面高達94%以上的平坦度。 儘管化學機械硏磨平坦化製程的控制相當地複雜，但 是實際應用上，這項技術還受限於一些製程整合上的問 題，例如缺乏有效的化學機械硏磨終點偵測系統（End_ 3 83. 3.10,000 (请先聞讀背面之注意事項再填寫本X ) 本紙張尺度通用中國國家標準（CNS ) A4祝格（210X297公釐） 經濟部中央揉準局負工消費合作社印製 425623 1621TW.F^Vic/005 A7 B7 五、發明説明（>)4 2 5 β 2 〇I621TW.F / Vic / 005 ^ 7 _B7 ___ 5. Description of the invention (/) In semiconductor process technology, surface flattening is an important technology for high-density lithography, because there is no high-low Only a flat surface can avoid exposure scattering, and achieve a precise pattern trans-fer. There are two types of planarization technologies: Spin-OnGlass (SOG) method and Chemical Mechanical Polishing method; printed by the Central Standards Bureau of the Ministry of Economic Affairs, printed by the Bayer Consumer Cooperative, etc .; After the process technology enters the Sub-Half-Micron, the spin-on glass method can no longer meet the required flatness, so chemical mechanical honing technology is now the only one that can provide very large integrated circuits (Very-Large Semiconductor Integration) VLSI), even Ultra-Large Semiconductor Integration (ULSI) process, a technology of "Global Planarization". Chemical mechanical honing technology from IBM Corporation has been successfully applied to many products developed by IBM Microelectronics. Because chemical mechanical honing technology is likely to be the only planarization process that semiconductor industry must rely on in the future, most of the current semiconductor-related factories and research institutes are fully developing chemical mechanical honing technology in order to maintain future competitive advantages. Basically, the chemical mechanical honing technology uses the principle of mechanical honing, with appropriate chemical agents (Reagent) and honing grains, to flatten the surface with uneven contours. Technology; if the process parameters are properly controlled, the chemical mechanical honing method can provide a flatness of up to 94% of the surface being honed. Although the control of the chemical mechanical honing flattening process is quite complicated, in practice, this technology is also limited by some process integration problems, such as the lack of an effective chemical mechanical honing end point detection system (End_ 3 83. 3.10,000 (Please read the notes on the back before filling in this X) This paper size is in accordance with the Chinese National Standard (CNS) A4 Zhuge (210X297 mm) Printed by the Central Consumers ’Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 425623 1621TW. F ^ Vic / 005 A7 B7 V. Explanation of the invention (>)
Point Detection System)，及硏磨污染物（contaminant) 的控制等。現在的化學機械硏磨製程終點，主要都是依賴 一層稱爲阻絕層（Stop Layer)的沉積薄膜，如氮化矽 (Nitride ; SnN〇，來執行這項任務。整體來說，現在化 學機械硏磨平坦化製程的發展，集中在如何增進被硏磨層 的平坦性（planarity)、硏磨速率、硏磨的材質選擇性 (Selectivity)、及終點偵測等；此處所謂的選擇性就是 指硏磨製程對不同的被硏磨薄膜的硏磨速率比値。 在習知的技藝中，請參照第1圖，在具有金屬層11的 底材10上，先以化學氣相沈積法(Chemical Vapor Deposition ; CVD) 沈積第一 氧化層 12 ， 再覆蓋旋塗式玻璃 13 ， 此旋塗式玻璃13的材質例如是二氧化矽。然後經過固化 (Curing)去除旋塗式玻璃13中所含溶劑，並且對旋塗式玻 璃13進行離子植入，再以CVD方式沈積第二氧化層14， 例如電獎氧化層(Plasma Enhance Oxide ; PEOx) »形成一 類似三明治之疊層介電絕緣層構造。在此習知方法中，因 爲旋塗式玻璃13的移除速率(Remove Rate)比第二氧化層 14的移除速率快很多，因此爲避免過度硏磨(Overpolish) 至旋塗式玻璃13，需沈積很厚的第二氧化層14，但是如 此會造成進行化學機械硏磨時較耗時，且會產生被硏磨物 均勻性(Uniformity)不佳的缺點。 因此，本發明的主要目的就是提供一種化學機械硏磨 緩衝層結構，改善第二氧化層太厚以及被硏磨物均勻性不 佳的缺點。 本發明的另一目的就是提供一種方法來製造此化學機 4 本紙張尺度逋用中困國家橾率（CNS ) A4规格（210X297公羡> 83· 3.10,000 -^^1 - ^^1 ^^1 In .jf t Hi n (讀先閲讀背面之注^>磺再填寫本頁) 订 經濟部中央標準局工消費合作杜印製 4 2 5 6 ^3 1621TW.F/Vic/〇〇5 A 7 B7_______ 五、發明説明（+ ) 械硏磨之緩衝層結構。 根據本發明之上述目的，提出一種化學機械硏磨之緩 衝層結構，該結構中旋塗式玻璃的移除速率比第二氧化層 的移除速率慢很多，因此硏磨至第二氧化層與旋塗式玻璃 的介面時，旋塗式玻璃就可以當作緩衝層，所以第二氧化 層的厚度不需很厚，而且可以改善均勻性不佳的缺點。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉一些較佳實施例，並配合所附圖式，作 詳細說明如下= 圖式之簡單說明： 第1圖繪示一種習知化學機械硏磨法的製程 第2A至2C圖繪示本發明較佳實施例之一種化學機械 硏磨緩衝層結構的製造流程剖面示意圖。 實施例 參照第2A圖，在底材20上，具有因大約平行而與底 材20產生凹口的金屬層21 ，以電漿化學氣相沈積法 (Plasma Enhance Chemical Vapor Deposition ; PECVD)使 第一氧化層22沈積並覆蓋住底材20與金屬層21，此第一 氧化層22的材質例如爲多砂氧化砂（Silicon Rich Oxide)， 厚度大約爲500〜3000A。然後再用旋轉式塗蓋法（Spin Coating)，塗蓋一層旋塗式玻璃23厚度爲1000〜15000A。 接著在250〜500 °C之下，進行0.2〜3小時的固化製程，其 中固化製程例如是充氮氣的真空（Vacuum)固化法 '電子束 (Electron Beam)固化法或者是含>}2 ' H2的快速加熱製程 (Rapid Thermal Processing ; RTP)固化法。當固化製程結 5 本紙張尺度適用中國國家標準（CNS > A4規格（210X297公瘦) „——.------' '批衣------ir------.^ (請先閱讀背面之注意事項再填寫本頁) ,· · ' -·. ._y ~· 、 1621 TW.F/Vic/005 A7 經濟部中央標嗥局貝工消費合作社印敦 五、發明説明（f ) 束後，進行砷離子植入（Ion Implant)。然後，在旋塗式玻 璃23表面上，沈積第二氧化層24，例如電漿氧化層，厚 度爲1000〜30000A。再使用化學機械硏磨法將第二氧化層 24硏磨到此第二氧化層24與旋塗式玻璃23之介面，此結 構中旋塗式玻璃23的移除速率比第二氧化層24的移除速 率慢很多，此旋塗式玻璃的材質是三氧矽甲院 (Methylsilsesquioxane)，形成第2B圖所示之結構。 最後，參考第：iC圖，在第二氧化層24表面沈積一層 介電層25，例如氧化矽或氮化矽。而接下來的製程，因爲 是習知此技藝者所熟悉，且非本發明之重點，所以不再贅 述。 上述實施例中，提出一種化學機械硏磨之緩衝層結 構，此化學機械硏磨之緩衝層結構中旋塗式玻璃的移除速 率(Remove Rate)比第二氧化層的移除速率慢很多。因此硏 磨至第二氧化層與旋塗式玻璃的介面時，旋塗式玻璃就可 以當作緩衝層，所以第二氧化層的厚度不需很厚而且可以 改善被硏磨物均勻性不佳的缺點。 雖然本發明已以一些較佳實施例揭露如上，然其並非 用以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍內，當可作各種之更動與潤飾，因此本發明之 保護範圍當視後附之申請專利範圍所界定者爲準。 =——.------' 么衣-------ΐτ------.^ (請先閱讀背面之注意事項再填寫本I) 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）Point Detection System), and control of contaminant. The end of the current chemical mechanical honing process is mainly dependent on a layer of deposited film called a stop layer, such as silicon nitride (Nitride; SnN0), to perform this task. In general, now chemical mechanical honing The development of the grinding and flattening process focuses on how to improve the planarity of the honing layer, the honing rate, the selectivity of the honing material, and the endpoint detection; the so-called selectivity here refers to The honing rate ratio of the honing process to different honing films is 値. In the conventional art, please refer to FIG. 1. On a substrate 10 having a metal layer 11, a chemical vapor deposition method is first used. Vapor Deposition; CVD) deposits a first oxide layer 12 and then covers the spin-on glass 13. The material of the spin-on glass 13 is, for example, silicon dioxide. Then, the solvent contained in the spin-on glass 13 is removed by curing. And ion-implanting the spin-on glass 13 and depositing a second oxide layer 14 by CVD, such as Plasma Enhance Oxide (PEOx) »to form a sandwich-like laminated dielectric insulating layer structure In this conventional method, since the removal rate of the spin-on glass 13 is much faster than the removal rate of the second oxide layer 14, in order to avoid overpolish to the spin-on glass 13, A very thick second oxide layer 14 needs to be deposited, but this will cause time consuming when performing chemical mechanical honing, and the disadvantages of poor uniformity of the object to be honed will result. Therefore, the main purpose of the present invention is to A chemical mechanical honing buffer layer structure is provided to improve the disadvantages that the second oxide layer is too thick and the uniformity of the material being honed is not good. Another object of the present invention is to provide a method for manufacturing the chemical machine. CNS A4 Specification (210X297 Public Envy > 83 · 3.10,000-^^ 1-^^ 1 ^^ 1 In .jf t Hi n (Read the note on the back ^ > (Fill in this page) Ordered by the Ministry of Economic Affairs, Central Standards Bureau, Industrial and Consumer Cooperation, Du printed 4 2 5 6 ^ 3 1621TW.F / Vic / 〇〇5 A 7 B7_______ V. Description of the invention (+) The structure of the buffer layer of mechanical honing. According to The above object of the present invention is to provide a buffer layer structure for chemical mechanical honing. The removal rate of spin-coated glass in the structure is much slower than that of the second oxide layer, so when honing to the interface between the second oxide layer and the spin-coated glass, the spin-coated glass can be used as a buffer layer. Therefore, the thickness of the second oxide layer need not be very thick, and the disadvantage of poor uniformity can be improved. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, some preferred embodiments are given below. In conjunction with the attached drawings, the detailed description is as follows = Brief description of the drawings: Fig. 1 shows a process of a conventional chemical mechanical honing method. Figs. 2A to 2C show a chemistry of a preferred embodiment of the present invention. Schematic cross-section of the manufacturing process of the mechanical honing buffer layer structure. Example Referring to FIG. 2A, a metal layer 21 having a notch with the substrate 20 due to being approximately parallel is formed on the substrate 20, and the first is made by Plasma Enhance Chemical Vapor Deposition (PECVD). An oxide layer 22 is deposited and covers the substrate 20 and the metal layer 21. The material of the first oxide layer 22 is, for example, Silicon Rich Oxide, and the thickness is about 500-3000 A. Then, a spin coating method is used to coat a layer of the spin coating glass 23 with a thickness of 1000 to 15000 A. Then, the curing process is performed at a temperature of 250 to 500 ° C for 0.2 to 3 hours. The curing process is, for example, a vacuum curing method filled with nitrogen, such as an "Electron Beam" curing method or a method containing >} 2 '. H2 rapid thermal processing (RTP) curing method. When the curing process ends, the paper size is in accordance with China's national standard (CNS > A4 size (210X297 male thin) ”——.------ '' batch clothes ------ ir ------ . ^ (Please read the precautions on the back before filling out this page), ·-'-·. ._Y ~ ·, 1621 TW.F / Vic / 005 A7 Shellfish Consumer Cooperative, Central Standards Bureau, Ministry of Economic Affairs, India. Description of the invention After the (f) beam, arsenic ion implantation (Ion Implant) is performed. Then, on the surface of the spin-on glass 23, a second oxide layer 24, such as a plasma oxide layer, is deposited to a thickness of 1000 to 30,000 A. The chemical-mechanical honing method hones the second oxide layer 24 to the interface between the second oxide layer 24 and the spin-on glass 23. In this structure, the removal rate of the spin-on glass 23 is faster than the removal of the second oxide layer 24. The speed is much slower. The material of this spin-on glass is Methylsilsesquioxane, which forms the structure shown in Figure 2B. Finally, referring to Figure iC, a dielectric layer is deposited on the surface of the second oxide layer 24 25, such as silicon oxide or silicon nitride, and the following processes are familiar to those skilled in the art and are not the focus of the present invention, so In the above embodiment, a buffer layer structure of chemical mechanical honing is proposed. In the buffer layer structure of the chemical mechanical honing, the removal rate of the spin-on glass is higher than that of the second oxide layer. It is much slower. Therefore, when honing to the interface between the second oxide layer and the spin-coated glass, the spin-coated glass can be used as a buffer layer, so the thickness of the second oxide layer does not need to be very thick and can improve the uniformity of the object Disadvantages of poor sexual performance. Although the present invention has been disclosed as above with some preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make various changes without departing from the spirit and scope of the invention Changes and retouching, so the scope of protection of the present invention shall be determined by the scope of the attached patent application. = ——.------ '' 衣 --------- τ ----- -. ^ (Please read the notes on the back before filling in this I) 6 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)