A7 425335 B7 _ 五、發明說明() 5-1發明領域: 本發明係有關於一種應用於半導體製程之化學機械研 設備中之研磨墊清潔裝置,特別是有關於一種可於化學機 械研磨製程令,選擇同步"或非同步清潔研磨墊之研磨塾清 潔裝置。 5-2發明背景: 隨著半導體元件的設計曰趨複雜,以及結構上的疊層 日益增多,化學機械研磨法(Chemical Mechanical Polishing)已經成為半導體領域中一項不可或缺的單元製 程。當進行化學機械研磨製程時,研磨裝置會首先利用其 中的研磨頭(Polishing Head)吸附晶圓。接著利用研磨頭 的移動將晶圓安放至一層鋪有研磨墊(p〇llshing Pad)的 研磨台上’並同時於研磨墊的表面喷灑研漿(siurry)。之 後利用研磨頭對晶圓施壓使其緊貼於研磨墊上,再透過其 中的馬達裝置旋轉晶圓而達成表面的平坦化。一般而言, 研裝的成份主要是由一些膠狀的微粒以及適當的化學助劑 (Reagent)所組成,當受研磨頭拘束的晶圓相對於研磨墊徒 轉時,該晶圓的表面將同時以兼具化學反應與機械研磨的 方式而達成平坦化的效果。 請參閱第1圖,顯示了傳統上利用化學機械研磨裝置 進行平坦化製程之示意圖。當進行研磨時,研磨頭會 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公f ) I. , I 裝 f請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智慧財產局員工消費合作杜印製 A7 425335 明說 明發 五 將晶圓吸附於其下表面(圖中未顯示),並對晶圓施加向下 之作用力’使其緊貼於研磨墊102的表面,並同時透過研 渡喷管(Slurry Delivery Arm)106喷灑研漿於研磨塾1〇2 的表面。一般而言’研磨墊102係為高分子材料所聚合而 成的平面’以微觀視之其表面為顯微狀的絨毛結構,因此 可與晶圓相摩擦而產生研磨的效果。此外,為了使研漿可 以充分的流動,通常研磨墊1 〇 2的表面會有數條細微的溝 渠(Groove)的設計,使得研漿可於其中的流動,以充分的 分伟於晶圓與研磨墊之間的界面。同時,研磨墊102與研 磨頭1 0 4皆依照著一定的方向旋轉,使得晶圓在研漿與研 磨墊102的作用下,以利用兼具化學反應與機械研磨的方 式達成平坦化的效果。 請繼續參閱第1圖,當研磨墊102連續研磨數片晶園 之後’許多化學機械研磨製程中的反應副產物(Byproduct) 將會附著於研磨墊102的表面,甚至嵌入其表面的絨毛以 及溝渠之中,因而造成其的使用性能大幅的下降’嚴重時 甚至會到傷晶固、的表面。為了克服此一問題,傳統上會在 研磨墊102使用了 一段時間之後,對其進行起始化 (Initialization)的處理。當進行起始化處理時,會將研 磨頭104自研磨墊1〇2的表面移除並停止嘖灑研漿。之後 利用一組清潔刷頭(Condition Head) 107於研磨墊丨〇2的 表面來回移動,同時配合研磨塾以及清潔刷頭1 0 7的旋 轉,以清掃研磨墊表面於化學機械研磨製程中所附著之製 程殘留物。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297 (請先閱讀背面之沒意事項再填寫本頁) ' * 裝 -----訂---I!-線 經濟部智慧財產局員工消費合作社印製 公釐) A7 425335 _____B7___ 五、發明說明() --------------裳--- I (请先閱讀背面之江意事項再填寫本頁) 請參閱第2圖,顯示了上述之化學機械研磨展置的正 視圖。如圖t所示,研磨墊102安置於研磨台202( Polish Piaten)202之上,並透過研磨台202的帶動而旋轉。當進 行研磨時’研磨頭1 04會吸附晶圓204並將其貼於研磨塾 102的表面以進行研磨。當對研磨墊1〇2進行起始化程序 時,則先將晶圓204與研磨頭1 04移開研磨墊的表面,再 利用清潔刷頭1 0 7刮除研磨墊1 〇 2表面之製程殘留物。由 於清潔刷頭1 0 7的下表面則具有與研磨塾1 〇 2相接觸的摩 擦盤206 ’當其受到透過機械手臂208的帶動時,將可沿 著研磨墊102的表面移動,並利用摩擦的方式進而除去研 磨製程之殘留物。此外,當對研磨墊1〇2進行起始化程序 時’清潔刷頭107與研磨墊1〇2將各自繞著一定方向而旋 轉,因此使得摩擦盤206將可以對整個研磨墊的面積,有 效的清除附著於其上的製程殘留物。 -線 經濟部智楚財產局具工消費合作社印製 由於傳統上,清掃研磨墊與化學機械研磨製程必須分 開進行,因此使得研磨製程必須經常暫停以進行研磨墊起 始化的處理。此外’當研磨墊使用了 一段時間之後,許多 研磨製程中所產生的微粒會陷落(Trapped)於研磨墊表面 的溝槽之中|而這些微粒往往無法透過清潔刷頭之摩擦盤 而獲得有效的排除。如此將造降低研磨墊的操作效能,甚 至會刮傷晶圓的表面。 綜上所述,為了有效防止製程微附著於研磨墊表面所 造成潛在到傷晶圓的危機,以及減少起始化處理的操作頻 率》因此’本發明提出了一個可選擇與研磨製程同步或非 本纸張尺度適用中國國家標準(CNS)A4規格mo X 297公餐) A7 4 2 5 3 3 5 B7 五、發明說明() 同步進行的研磨墊清潔裝置,以克服上述習知技藝之所產 生的問題。 (請先閱讀背面之·;£意事項再填寫本頁) 5-3發明目的及概述: 本發明之目的為在提供一種可應用於化學機械研磨設 備_的研磨墊清潔裝置。 本發明之另一目的為在提供一種可與化學機械研磨製 程同步進行的研磨墊清潔裝置。 本發明之又一目的為在提供一種可與化學機械研磨製 程以非同步方式進行的研磨墊清潔裝置。 本發明之再一目的為提供一種同時可與化學機械研磨 製程以同步或非同步的方式進行的研磨墊清潔裝置。 經濟部智慧財產局員工消費合作社印契 本發明揭露了一種應用於化學機械研磨設備中的研磨 墊清潔裝置,其中包含研磨台、研漿噴管,以及位於研漿 喷管下方的同步清潔刷毛。當進行化學機械研磨製程時, 研磨台將帶動研磨墊旋轉,而研漿噴管漿噴灑研漿於研磨 墊之表面,同時研磨頭會壓置晶圓於研磨墊之上以進行研 磨的程序。而此時位於研漿喷管下方的同步清潔刷毛,將 與研磨製程同步進行而清掃研磨墊的表面附著的製程微 粒。 此外,本發明之研磨墊清潔裝置還可以搭配清潔刷頭 的使用,以進一步除去附著於研磨墊表面的製程微粒。清 本紙張尺度適用中國國家標準(CNS)A4規格C?10 X 297公釐) 4 253 3 5 A7A7 425335 B7 _ 5. Description of the invention (5-1) Field of the invention: The present invention relates to a polishing pad cleaning device used in chemical mechanical research equipment of semiconductor manufacturing processes, and in particular, to a chemical mechanical polishing process order , Choose synchronous " or non-synchronous cleaning pad polishing pad cleaning device. 5-2 Background of the Invention: As the design of semiconductor devices becomes more complex and the number of stacked structures is increasing, chemical mechanical polishing has become an indispensable unit process in the semiconductor field. When performing a chemical mechanical polishing process, the polishing device first uses a polishing head to adsorb the wafer. Then, the wafer is moved to a polishing table with a polishing pad by using the movement of the polishing head, and a slurry is sprayed on the surface of the polishing pad at the same time. Then, the wafer is pressed against the polishing pad with a polishing head, and then the wafer is rotated by a motor device to flatten the surface. In general, the components of the research and development are mainly composed of some colloidal particles and appropriate chemical agents (Reagent). When the wafer restrained by the polishing head is rotated relative to the polishing pad, the surface of the wafer will be At the same time, the effect of flattening is achieved by a combination of chemical reaction and mechanical polishing. Please refer to FIG. 1, which shows a schematic diagram of a conventional planarization process using a chemical mechanical polishing apparatus. When grinding, the grinding head will be in accordance with China National Standard (CNS) A4 specifications (210 X 297 male f) I., I. Please read the precautions on the back before filling this page) Order ---- ----- Consumption cooperation between employees of the Intellectual Property Bureau of the Ministry of Economic Affairs and Du Duan A7 425335 clearly states that Fawu will attach the wafer to its lower surface (not shown in the figure) and exert downward force on the wafer. It is closely attached to the surface of the polishing pad 102, and at the same time sprays the slurry on the surface of the polishing pad 102 through a Slurry Delivery Arm 106. Generally speaking, the 'polishing pad 102 is a plane formed by polymerizing a polymer material', and its surface has a microscopic fluff structure in microscopic view, so it can rub against the wafer to produce a polishing effect. In addition, in order to allow the slurry to flow sufficiently, there are usually several fine grooves (Groove) on the surface of the polishing pad 102, so that the slurry can flow in it, which is better than the wafer and polishing. Interface between pads. At the same time, both the polishing pad 102 and the grinding head 104 rotate in a certain direction, so that the wafer can achieve a flattening effect by using both the chemical reaction and mechanical polishing under the action of the grinding slurry and the grinding pad 102. Please continue to refer to FIG. 1. After the polishing pad 102 continuously grinds a few wafers, many byproducts of the chemical mechanical polishing process will adhere to the surface of the polishing pad 102, and even embed fluff and trenches on the surface. In the process, the use performance will be greatly reduced. In serious cases, the surface may even be damaged. To overcome this problem, the polishing pad 102 is conventionally subjected to an initialization process after it has been used for a period of time. When the initializing treatment is performed, the grinding head 104 is removed from the surface of the polishing pad 102 and the grinding slurry is stopped from being sprinkled. Afterwards, a set of cleaning heads (Condition Head) 107 are used to move back and forth on the surface of the polishing pad. At the same time, the rotation of the polishing pad and the cleaning brush head 107 is used to clean the surface of the polishing pad attached to the chemical mechanical polishing process. Process residues. This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 (please read the unintentional matter on the back before filling out this page) '* Packing ----- Order --- I!-Ministry of Economic Affairs Intellectual Property Printed by the Consumer Cooperatives of the Bureau) A7 425335 _____B7___ 5. Description of the invention () -------------- Shang --- I (Please read the Jiang Yi matters on the back before filling this page ) Please refer to Figure 2 for a front view of the chemical mechanical polishing booth described above. As shown in FIG. T, the polishing pad 102 is disposed on a polishing table 202 (Polish Piaten) 202 and is rotated by the driving of the polishing table 202. When polishing, the 'polishing head 104 will attract the wafer 204 and attach it to the surface of the polishing pad 102 for polishing. When the initialization process of the polishing pad 10 is performed, the wafer 204 and the polishing head 104 are first removed from the surface of the polishing pad, and then the cleaning brush head 10 7 is used to scrape off the surface of the polishing pad 1 02 the remains. Since the lower surface of the cleaning brush head 107 has a friction plate 206 that is in contact with the grinding pad 102, when it is driven by the robot arm 208, it can move along the surface of the polishing pad 102 and use friction The method further removes the residue of the grinding process. In addition, when the polishing pad 102 is initialized, the 'cleaning brush head 107 and the polishing pad 102 will each rotate around a certain direction, so that the friction disk 206 will be effective for the entire polishing pad area. Removal of process residues attached to it. -Line Printed by the Industrial and Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Traditionally, cleaning and polishing pads have to be separated from the chemical mechanical polishing process. Therefore, the polishing process must often be suspended for the initial processing of the polishing pads. In addition, when the polishing pad is used for a period of time, many particles generated during the polishing process will be trapped in the grooves on the surface of the polishing pad | and these particles often cannot be effectively obtained by cleaning the friction disk of the brush head. exclude. This will reduce the operating efficiency of the polishing pad and may even scratch the surface of the wafer. In summary, in order to effectively prevent the risk of potential damage to the wafer caused by the micro-adhesion of the polishing pad to the surface of the polishing pad and reduce the frequency of the initializing operation, the present invention proposes an option to synchronize with the polishing process or not. This paper scale is applicable to Chinese National Standard (CNS) A4 specification mo X 297 meal) A7 4 2 5 3 3 5 B7 V. Description of the invention () Simultaneous polishing pad cleaning device to overcome the above-mentioned conventional skills The problem. (Please read the notes on the back before filling in this page) 5-3 Purpose and summary of the invention: The purpose of the present invention is to provide a polishing pad cleaning device that can be applied to chemical mechanical polishing equipment. Another object of the present invention is to provide a polishing pad cleaning device which can be performed synchronously with a chemical mechanical polishing process. Another object of the present invention is to provide a polishing pad cleaning device that can be performed in a non-synchronous manner with a chemical mechanical polishing process. Another object of the present invention is to provide a polishing pad cleaning device that can be performed simultaneously or asynchronously with a chemical mechanical polishing process. Seal of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The present invention discloses a polishing pad cleaning device used in chemical mechanical polishing equipment. When performing the chemical mechanical polishing process, the polishing table will drive the polishing pad to rotate, and the slurry nozzle sprays the slurry on the surface of the polishing pad, and the polishing head will press the wafer on the polishing pad to perform the grinding process. At this time, the synchronous cleaning bristles located below the mortar nozzle will synchronize with the polishing process and clean the process particles attached to the surface of the polishing pad. In addition, the polishing pad cleaning device of the present invention can also be used with a cleaning brush head to further remove process particles attached to the surface of the polishing pad. The paper size of this paper applies Chinese National Standard (CNS) A4 specification C? 10 X 297 mm) 4 253 3 5 A7
五、發明說明() 潔刷頭透過一組機械手臂,以可旋蜱的方式固定於研磨台 之上,並安置於研磨墊的外側。當欲以研磨墊刷頭清掃研 磨墊時’首先會停止研磨晶圓的程序,接著利用機械手臂 帶動清潔刷頭於研磨墊的表面來回移動’並透過位於其下 表面的非同步清潔刷毛,以進一步掃除附著於研磨墊表面 的製程微粒。 5~4固式簡單說明·· 第1圖 為傳統上利用化學機械研磨設備進行平坦化 製程之示意圖。 第2圖 為傳統上化學機械研磨設備之正視圖。 第3圖 為本發明中研磨墊表面的微粒附著率相對於 研磨墊使用時間的關係圖。 第4圖 為具有本發明之研磨墊清潔裝置的化學機械 研磨設備之示意圖, 第5圖為本發明之研磨墊清潔裝置中清潔刷頭之底 視圖與正試圏。 1 ί裝 訂---------線'. f請先閱讀背面vji意事項再填寫本頁) 明 說 細 詳 明 發 經濟部智慧財產局員工消費合作社印製 出 提 係 明 發 本 磨的表 研步墊 的同磨 中非以 備或先 設#首 磨同將 研以下 械,以 機行。 學進物 化的留 於程殘 用製程 應磨製 種研的 I 合面 配表 並墊 , 磨 置研 裝除 潔清 清式 塾方 A7V. Explanation of the invention () The cleaning brush head is fixed on the grinding table in a rotatable manner through a set of mechanical arms, and is placed on the outside of the grinding pad. When you want to clean the polishing pad with the polishing pad brush head, 'the process of polishing the wafer will be stopped first, and then the cleaning brush head will be moved back and forth on the surface of the polishing pad by a robotic arm', and the asynchronous cleaning bristles on the lower surface will be used to Further remove process particles attached to the surface of the polishing pad. 5 ~ 4 solid type simple explanation ··· Figure 1 is a schematic diagram of the traditional planarization process using chemical mechanical polishing equipment. Figure 2 is a front view of a conventional chemical mechanical grinding equipment. Fig. 3 is a graph showing the relationship between the particle adhesion rate on the polishing pad surface and the polishing pad use time in the present invention. Fig. 4 is a schematic view of a chemical mechanical polishing device having a polishing pad cleaning device of the present invention, and Fig. 5 is a bottom view and a test test of a cleaning brush head in the polishing pad cleaning device of the present invention. 1 ί Binding --------- line '. F Please read the vji notice on the back before filling in this page) Explain in detail the details issued by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs The table grinding step mats are prepared in the same mill in China or set first. Learn the materialization, leave it in the process, and use the process. You should grind the I-type surface of the research. Match the table and pad. Grind the research and install. Clean and clean.
425335 經濟部智慧財產局員工消費合作社印制Λ 五、發明說明() 面之微粒附著率-研磨墊使用時間的關係圖,以說明製程微 粒的附著機制(Scheme)。接著,再以—個具體實施例來說 明本發明的精神》 請參閱帛3圈’顯示了研磨塾表面之微粒附著率相對 於研磨墊使用時間的關係圈。首先微粒附著率的定義為, 每進行100研磨製程中發現研磨墊表面殘留微粒多於1〇〇 顆的次數。因此從圖中可以發現,在研磨墊使用1〇小時 内,其微粒附著的情形大致還稱穩定,而當超過丨〇小時 後,微粒附著的情形則顯著的增加,研磨墊的微粒附著率 高’即意味著過多的微粒殘留於研磨墊表面與其溝渠之 中’因此需要對研磨墊進行清掃附著微粒的程序。 請參閱第4圈,顯示了本發明中第—個實施例之部份 化學機械研磨設備的立體示意圖《•如圖中所示,研磨台4〇2 之上具有研磨墊404,而位於研磨墊404的上方則包含有 研磨頭(圏中未顯示)’用以吸附晶圓並將其壓置於研磨塾 404的表面以進行研磨製程。當進行化學機械研磨時研漿 喷管(Slurry Delivery Arm)406會喷灑研漿於研磨塾4〇4 的表面,同時研磨頭與研磨墊亦會相對的旋轉而產生化學 機械研磨的效果。 在此實施例中的研磨墊清潔裝置,主要係由位於研躁 噴管406下方的同步清潔刷毛408所組成》該同步清潔刷 毛408與研磨墊404的表面相接觸,因此當進行研磨製程 時,研磨墊404將會轉動並與同步清潔刷毛408發生摩擦, 進而同步(In-Situ)清除殘留於研磨墊404表面的製程微 本紙張尺度適用中國國家標準(CNSM4規格(210 X 297公釐) ! ^ --------^--I------ *- (請先閱讀背面之注意事項再填寫冬頁) A7 425335 ____B7___-_ 五、發明說明() 粒。而為了避免影響研漿的噴灑過程,同步清潔刷毛4 0 8 可以安置於研漿噴管406喷灑研漿的另—方向上。如此僅 具單排設計的同步清潔刷毛406,將不至於影響化學機械 研磨製程的進行。此外,由於研漿的酸鹼值通常偏低’因 此在同步清潔刷毛408的選擇上,最好能選用可以抗酸鹼 性的材質,而本實施例中所選用的材質係為尼龍(Ny 1 on) 材料。 請仍參閲第4圖,除了位於研漿喷管406下方的同步 清潔刷毛408,傳統上的清潔刷頭4 1 2亦可於未進行研磨 製程時清掃研磨墊404的表面^如圖1ί1所示,清潔刷頭41 2 透過機械手臂410連接於研磨台402之上。當研磨墊404 進行化學機械研磨製程時,清潔刷頭412會安置於研磨墊 404的外侧。當欲利用清潔刷頭412清掃研磨墊404的表 面時,首先會停止喷灑研漿並將晶圓自研磨墊404的表面 移開。值得一提的是,雖然此時化學機械研磨的程序已經 停止,但研磨墊404仍持續保持運轉以利清潔刷頭41 2進 行清掃的程序》當以清潔刷頭4 1 2清掃研磨垫404時,清 潔刷頭412受到機械手臂410的帶動將於研磨墊的表面來 回移動’同時清潔刷頭412也會以旋轉的方式清掃研磨垫 的表面。由於清潔刷頭412之下表面具有與研磨墊404相 接觸的摩擦盤414以及非同步清潔刷毛416,因此透過摩 擦盤414與非同步清潔刷毛416與研磨墊404之間的摩 擦,將可以進一步以與研磨製程非同步的方式除去殘留的 製程微粒。 本紙張尺度財國家料(CNS)A4規格⑵0 X 297^« (請先閱讀背面之注意事項再填寫本頁) I i ^-------- ^ ---I I I I ί . 經濟部智慧財產局員工消費合作社印製 A7 425335 ___B7________ 五、發明說明() 請參閱第5圖,顯示了本發明之研磨墊清潔裝置中清 潔刷頭的底視圖與正視圖。如圖中所示清潔刷頭4 1 2的下 表面包含摩擦盤4 1 4與非同步清潔刷毛4 1 6 "其中摩擦盤 4 1 4具有粗糙之表面,當清潔刷頭4 1 2清掃所磨塾時’該 摩擦盤412之粗糙表面,將可到除殘留於研磨塾表面的製 程微粒並活化其表面的絨毛。而非同步清潔刷毛4 1 6則以 環型配置的方式排列於摩擦盤414的周圍,並透過機械手 臂的帶動與清潔刷頭41 2自身的轉動,以掃除陷落於研磨 墊表面之溝槽内的製程微粒。在此實施例中,摩擦盤4 1 4 係由多個碎鑽石所組成的圓盤,而該非同步清潔刷毛4 1 6 則為可耐酸鹼溶液侵蝕的尼龍材質。 本發明中所提出的同步以及非同步清潔刷毛具有不 同的使用特徵’例如’同步清潔刷毛係於化學機械研磨製 程中,以同步的方式持續的清掃研磨墊的表面,以得到良 好的清掃效果’但卻會造成刷毛容易磨損的問題。因此, 對於同步清潔刷毛與非同步清潔刷毛之應用,將可以視實 際應用上的需要予以搭配組合以得到最佳的使用效果。 本發明以一較佳實施例說明如上,僅用於藉以幫助了 解本發明之實施’非用以限定本發明之精神,而熟悉此領 域技藝者於領悟本發明之精神後’在不脫離本發明之精神 範園内’當可做些許更動潤飾及等同之變化替換,其專利 保護範圍當視後附之專利申請範圍及其等同領域而定。 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公笼) !裝--------訂*---- 線 - * (請先閱讀背面之;1意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製425335 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Ⅴ. The relationship between the particle attachment rate on the surface of the invention and the use time of the polishing pad, to illustrate the mechanism of particle attachment during the manufacturing process (Scheme). Next, the spirit of the present invention will be described with reference to a specific embodiment. Please refer to "3 circles", which shows the relationship between the particle adhesion rate on the surface of the polishing pad and the use time of the polishing pad. First, the particle adhesion rate is defined as the number of times more than 100 particles are found on the surface of the polishing pad during every 100 polishing processes. Therefore, it can be found from the figure that within 10 hours of the use of the polishing pad, the particle adhesion is roughly stable, and after more than 10 hours, the particle adhesion significantly increases, and the particle adhesion rate of the polishing pad is high. 'That means too many particles remain on the surface of the polishing pad and its trenches'. Therefore, a procedure for cleaning and attaching particles to the polishing pad is required. Please refer to the fourth circle, which shows a three-dimensional schematic diagram of a part of the chemical mechanical polishing equipment of the first embodiment of the present invention. "As shown in the figure, the polishing pad 404 has a polishing pad 404 above it, and it is located on the polishing pad Above the 404, a grinding head (not shown in the figure) is used to adsorb the wafer and press it onto the surface of the grinding figure 404 to perform the grinding process. When chemical mechanical polishing is performed, the Slurry Delivery Arm (406) sprays the slurry on the surface of the polishing pad 404. At the same time, the polishing head and polishing pad will rotate relatively to produce the effect of chemical mechanical polishing. The polishing pad cleaning device in this embodiment is mainly composed of the synchronous cleaning bristles 408 located under the grinding nozzle 406. The synchronous cleaning bristles 408 are in contact with the surface of the polishing pad 404. Therefore, during the polishing process, The polishing pad 404 will rotate and friction with the synchronous cleaning bristles 408, and then the process (In-Situ) to remove the remaining micro-paper on the surface of the polishing pad 404 will be in accordance with Chinese national standards (CNSM4 specification (210 X 297 mm)! ^ -------- ^-I ------ *-(Please read the precautions on the back before filling in the winter page) A7 425335 ____ B7 ___-_ 5. Description of the invention () Affecting the spraying process of the slurry, the synchronous cleaning bristles 4 0 8 can be placed in the other direction of the slurry spraying tube 406 to spray the slurry. In this way, the synchronous cleaning bristles 406 with a single row design will not affect chemical mechanical polishing. In addition, because the pH value of the slurry is usually low, it is better to choose a material that can resist acid and alkali in the selection of the synchronous cleaning bristles 408. The material used in this embodiment is Nylon (Ny 1 on) Please refer to FIG. 4. In addition to the synchronous cleaning bristles 408 located below the grouting nozzle 406, the conventional cleaning brush head 4 1 2 can also clean the surface of the polishing pad 404 when the polishing process is not performed. As shown, the cleaning brush head 41 2 is connected to the polishing table 402 through a robot arm 410. When the polishing pad 404 is subjected to a chemical mechanical polishing process, the cleaning brush head 412 is disposed outside the polishing pad 404. When a cleaning brush head is to be used When cleaning the surface of the polishing pad 404 with 412, the spray slurry is first stopped and the wafer is removed from the surface of the polishing pad 404. It is worth mentioning that although the chemical mechanical polishing process has stopped at this time, the polishing pad 404 Still keep running to facilitate cleaning of the brush head 41 2 Procedure for cleaning >> When cleaning the polishing pad 404 with the cleaning brush head 4 1 2, the cleaning brush head 412 is driven by the robotic arm 410 and will move back and forth on the surface of the polishing pad ' The cleaning brush head 412 also sweeps the surface of the polishing pad in a rotating manner. Since the lower surface of the cleaning brush head 412 has a friction disk 414 in contact with the polishing pad 404 and asynchronous cleaning bristles 416, The friction between the disc 414 and the non-synchronized cleaning bristles 416 and the polishing pad 404 can further remove the remaining process particles in a non-synchronous manner with the polishing process. This paper is based on CNS A4 specification ⑵0 X 297 ^ « (Please read the notes on the back before filling this page) I i ^ -------- ^ --- IIII ί. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 425335 ___B7________ 5. Description of the invention () Please refer to FIG. 5, which shows a bottom view and a front view of the cleaning brush head in the polishing pad cleaning device of the present invention. As shown in the figure, the lower surface of the cleaning brush head 4 1 2 includes the friction disk 4 1 4 and the asynchronous cleaning bristles 4 1 6 " wherein the friction disk 4 1 4 has a rough surface, and when the cleaning brush head 4 1 2 is cleaned, During grinding, the rough surface of the friction plate 412 can remove the process particles remaining on the surface of the grinding plate and activate the fluff on the surface. The non-synchronized cleaning bristles 4 1 6 are arranged around the friction disk 414 in a ring configuration, and are driven by the robotic arm and the cleaning brush head 41 2 rotates itself to remove the grooves trapped on the surface of the polishing pad. Process particles. In this embodiment, the friction disc 4 1 4 is a disc composed of a plurality of broken diamonds, and the non-synchronous cleaning bristles 4 1 6 are made of a nylon material that is resistant to acid and alkali solutions. The synchronous and non-synchronous cleaning bristles provided in the present invention have different use characteristics. For example, 'synchronous cleaning bristles are tied in the chemical mechanical polishing process, and the surface of the polishing pad is continuously and continuously synchronized to obtain a good cleaning effect.' However, it causes the problem that the bristles are easily worn. Therefore, for the application of synchronous cleaning bristles and non-synchronous cleaning bristles, it can be combined and combined according to the actual application needs to obtain the best use effect. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention 'not to limit the spirit of the present invention, and those skilled in the art will understand the spirit of the present invention' without departing from the present invention. "Spiritual Garden" should be modified and replaced with equivalent changes, and the scope of patent protection shall depend on the scope of the attached patent application and its equivalent fields. This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 male cage)! Packing -------- Order * ---- Line-* (Please read the back first; fill in the 1 items before filling in (This page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs