TW420857B - Post etch treatment to remove photoresist - Google Patents

Abstract

The present invention provides a post etch treatment on a substrate, which has undergone a dielectric layer etching process, to effectively remove the photoresist and the polymer material left after etching of the dielectric layer. In a first example, the post etch treatment essentially comprises: a first oxygen plasma treatment where the oxygen flowrate is about 750 to 1250 sccm; a second oxygen plasma treatment where the oxygen flowrate is about 50 to 200 sccm; and a third oxygen plasma treatment where the oxygen flowrate is about 300 to 700 sccm. In a second example, the post etch treatment essentially comprises: applying one or plural plasma treatments in which oxygen is used as a first reaction gas, and a second reaction gas is added, where the second reaction gas is selected from the group consisting of nitrogen, a carbofluoro gas, a carbohydrofluoro gas, and a combination thereof.

Description

A7 B7 V. Description of the invention () Field of invention = (Please read the precautions on the back before filling out this page) The present invention is related to a semiconductor process, especially a post-etching process applied to the dielectric layer etching process Process. Background of the Invention: Since the birth of the first integrated circuit components, the semiconductor industry has developed for nearly forty years, and the technology of semiconductor manufacturing has continued to progress to minimize the size of components on wafers; With advances in process technologies such as photolithography, lithography, etching, and heat treatment, the precision of components and circuits on integrated wafers is also increasing. With the current process technology, a single wafer can already hold tens of millions, even several 100 million components, the progress of process technology has also made the size of components on integrated circuits can be reduced to the sub-micron (sub-micron) size range, in order to achieve the goal of higher integration.

Printed on the integrated circuit chip by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs * Various components are connected with conductive interconnects to form the designed circuit structure. Generally speaking, the chip is used on Several layers of conductor structure include horizontal and vertical connections to form a circuit, and each layer of conductor connection layer is separated by a dielectric layer. Generally, a layer of connection structure can mainly include a layer of dielectric. The electrical layer, as well as the vertical lines defined by the horizontal and downward extension connections, are also known as plugs. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 4 2 0 8 5 7, A7 B7 V. Description of the invention () ^ In the current metallization connection technology, 'the dielectric layer is usually formed first And define the opening in it to provide the space needed to fill the conductor material and form an electrical connection; then the conductor material is filled in the opening, that is, the contact hole or vu hole To form a connection in the vertical direction; and a connection in the horizontal direction can be formed by the definition of another conductive layer and a matching pattern. In the process of embedded or dual embedded (dual damascene), the connection in the horizontal direction can also be filled in and formed in the dielectric layer that has defined the lateral connection channel. Therefore, when the conductor material is filled When entering, you can complete the formation of horizontal and vertical lines at one time. As shown in the first group, the interconnect layer 12 is formed on the substrate 10, and an anti-reflective layer 14 is provided on the interconnect layer 12 to improve the accuracy of pattern definition during the lithography process. The dielectric layer 16 Then it is covered on the interconnect layer 12 and the anti-reflection layer 14. In order to define the openings necessary to form the vertical connection, a photoresist layer 18 is formed on the dielectric layer 16, and the required pattern is defined on Within. Then, the photoresist layer 18 can be used as a mask to perform the process of etching the dielectric layer 16 to form a connection hole 20 as shown in the second figure, which is used to communicate between different conductor layers. In general, it is possible during the etching process. Residues and by-products generated by the etching reaction are left, and a polymer substance 22 as shown in ® is formed on the side wall of the connection hole 20 and on the inner wall of the reaction chamber. After the main etching step to define the connection holes is completed, a series of processes are usually performed to remove the photoresist layer 18 and the remaining materials and by-products. The paper scale is applicable to the Chinese Standard (CNS) (210X297 mm) ( (Please read the precautions on the back before filling out this page.) Customs Bureau Intellectual Property Bureau, Ministry of Economic Affairs, Printing Team A7, B7

Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention, and the anti-reflection layer 14 under the connection hole 20 needs to be further removed to improve the conductive properties. In the traditional manufacturing process, the process used to complete the definition of the connection hole is mainly available. It includes four stages. See the second figure. After the main shoe engraving is performed, the first stage of post-engraving processing (p0St etch treatment; PET) 32; wherein the post-etching treatment 32 in the first stage may include several consecutive steps to remove the photoresist layer 18 and residual substances and by-products; then, step 34 of etching the anti-reflection layer, and A two-stage post-etching process 36 to remove substances and gases remaining on the substrate and the reaction chamber due to the etching of the anti-reflection layer. In the traditional method, the first stage of the post-etching treatment 32 may generally include three or more oxygen plasma treatment steps with different flow rates, and the flow rate variation range is about 1008 (; (; 〇 ^ To 500 sccm "However, in the above-mentioned connection hole etching process method, there are several disadvantages. In the first stage of post-etching treatment 32, the oxygen plasma cannot completely remove the high Molecular substances, especially metalized polymer substances (1116 (& 11) (polymer) remaining in the main etch 30, and the accumulation of metalized high-breaking substances in the reaction chamber often results in the control and stability of the reaction chamber. The polymer materials, especially metal-containing polymer materials, that remain on the wafer will not only affect the conductivity of the conductive layer formed in the subsequent contact, but may also be caused by the metallized polymer material. The electrical conductivity causes the problem of leakage of the interconnected circuit, and even the short circuit of the circuit may be caused by the metallized polymer substance connecting different wires. Standard (CNS > Μ specifications (210X297mm) (Please read the precautions on the back before filling out this page), words -_ A7 4 2 085 7, B7 V. Description of the invention ()). (Please read the back first (Please note that this page is to be completed before filling in this page) Object and summary of the invention: The object of the present invention is to provide a post-etching process. Another purpose of the present invention is to provide a post-etching process for the etching of a dielectric layer to remove polymer residues caused by the etching of the dielectric layer. Another object of the present invention is to provide a post-etching process. The processing process can effectively remove the by-products generated in the dielectric layer etching step, and eliminate the accumulation of metalized polymers, so that the reaction chamber conditions can maintain good stability. General printing of employees ’cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs For example, after the contact holes or connection holes are etched by the dielectric layer, a series of post-etching treatments are performed to remove residual by-products, and under the connection holes during the plug process. Square anti-reflection layer. In the manufacturing method of the present invention, one or more processes are performed after the etching process, and can be performed in the same reaction chamber as the etching process. In the first embodiment of the present invention, etching The post-processing process may mainly include: the first oxygen plasma treatment, which uses an oxygen flow rate of about 750 to 125 Osccm; the second oxygen plasma treatment, which uses the paper size of the Chinese national standard (CNS) A4 Specifications (210X297 mm) A7 B7 issued by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Description of the invention () The oxygen flow rate is about 50 to 200 sccm; and the third oxygen plasma treatment, the oxygen flow rate used is about Between 300 and 7OOsccm. In a second embodiment of the present invention, the post-etching process mainly includes applying plasma treatment once or more, wherein oxygen is used as a first reaction gas and a second reaction gas is added. The reaction gas system is one or a combination of a nitrogen-containing gas, a fluorocarbon gas, and a fluorocarbon gas. Further, the two main embodiments of the present invention can be combined, that is, the first oxygen plasma treatment, the second radon plasma treatment, and the third oxygen plasma treatment are applied in the above-mentioned processes. In at least one of the steps, the supply of the second reaction gas is added, for example, using one or a combination of the above-mentioned nitrogen-containing gas, fluorocarbon gas, and carbon-argon-fluorine gas, etc. "圊 Shows the wearing surface of a photoresist layer with a dielectric layer and a defined pattern on the substrate in the traditional process. The second figure shows a schematic cross-sectional view of the by-products of the etching reaction formed on the sidewall of the connection hole in the conventional process. The third figure shows the schematic diagram of the process of etching the dielectric layer connection hole and the subsequent processing procedure in the traditional process. The fourth figure shows a schematic flow chart of the process of etching the dielectric layer connection hole and performing the post-etching process in the first embodiment of the present invention. (Please read the notes on the back before filling this page)

、 1T This paper size applies the Chinese National Standard (CNS) A4 specification (2 丨 0 X 297 mm) 'A7 __ ^ _ B7_ V. Description of the invention () The fifth figure shows the second embodiment of the present invention, the etching The schematic diagram of the process of the dielectric layer connecting hole and the post-etching process. Figure 6 is a schematic cross-sectional view of a photoresist layer having a dielectric layer and a defined pattern on a substrate in the present invention. I Figure 7 shows a schematic cross-section of a by-product of the reaction engraved on the sidewall of the connection hole after the dielectric layer is etched in the present invention. FIG. 8 is a schematic cross-sectional view of a substrate after being processed by the manufacturing method of the present invention, after performing an etching post-processing process and removing an anti-reflection layer. The ninth figure shows a partial cross-sectional view of an inductively coupled high-density plasma reactor which can be used in the present invention. Detailed description of the invention: A post-etch treatment (PET) method for removing photoresist and other residues in the dielectric layer etching is proposed in the present invention. In the first embodiment of the present invention, The post-etching process is performed using a high-flow oxygen plasma treatment method. By greatly increasing the ion density under a high-flow radon plasma, the collision effect necessary to remove photoresist and polymer materials can be enhanced. The photoresist and other residues left after the dielectric layer is etched can be effectively removed without being affected by the etching parameters, the wafer used, the etching time, and temperature conditions, etc., while maintaining good quality (please first (Read the notes on the back and fill out this page)

， 1T This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 4 2 0 8 5 7: J mite A7 B7 V. Description of the invention () The energy efficiency is removed as much as it is used in the application The reverse process is circulated in the system, and the example in this book is used. After the implementation of the second part of the system, the etched version of the gas fluorocarbons and the body gas traps in the rapid steps were ionized. Qi is short for oxygen, which contains a significant amount of hydrogen and carbon, and the amount of fluorine required by the body gas should be reduced. However, the body gas should be reversed. The anti-use of the second two makes the fruit can produce good results. The rapid rate of high-quality detoxification, dematerialization, and sterilization needs to be as high as possible, and the high-level group that is blocked by light and light is more native (please read the precautions on the back before filling this page). The consumer cooperatives print the gases and parameters provided in this implementation of the present invention, which can also effectively remove the photoresist and other residues left after the dielectric layer is etched, and will not be affected by the etching parameters, the use of wafers, Influence of etching time, temperature conditions, etc., while maintaining good removal performance. With the post-etching process in the present invention, the problems caused by polymer residues, especially metalized polymer residues in the traditional process can be eliminated β. For the post-etching process in the present invention, please refer to the fourth figure and the fifth The flow chart shown in the figure is first performed the conventional main etching step 40. The photoresist layer 58 shown in the sixth figure is used as a mask, and the etching is formed on the substrate 50 and covered on the wiring layer 52 and the resist The dielectric layer 56 on the reflective layer 54 is formed to provide openings required for filling as connection materials, that is, openings such as contact holes or connection holes. This paper size applies to Chinese national standards (CNS > A4 size (2 丨 0 X 297 mm) 2 Λ o '5 8 ° ·-• Λ · 〆, 7 丨,' ,, Ό 2

A

It can be an iPS (inductive piasma source; induction plasma source) reaction machine manufactured by AppHed Materials, Inc. 〇 Clara, California, US, A., its approximate reaction chamber structure and coordination The equipment is as shown in the partial cross-sectional schematic diagram in Section IX. The wafer to be processed 80 is carried by the cathode stage 82 and the cathode stage 82 is supplied with radio frequency (RF) energy provided by the first radio frequency energy source. The silicon ring 8 6 surrounding the stage 8 2 can be controlled by the array of heating lamps 8 8, while the grounded silicon wall 90 surrounds the plasma treatment area, and the Shi Xi cover 92 is restored to the plasma treatment. In the area, a hair ring 86 with heating control and a part of the silicon top cover 92 can be used to remove fluorine generated by fluorocarbon plasma or fluorinated electropolymerization; the process gas is supplied by one or more lower gas supply ends 94, It is supplied via blocks of the mass flow controller 96. In addition, the upper gas supply end can form a small gas shower head on the silicon top cover 92, and a vacuum pump system (not shown) is connected to the pump channel 9 located below the reaction chamber. Maintain the reaction chamber at the set pressure, and the system controller 1000 controls the operation of the etching reaction machine and cooperating equipment "(Please read the precautions on the back before filling this page) In the previous architecture, the silicon top cover 92 would be grounded, but the resistivity and thickness of its semiconducting conductor would be adjusted and selected to enable the approximately axial RF magnetic field to pass through the broken top cover 92 to the axial RF magnetic field. It is an internal induction machine driven by RF energy supply 110 and 12 respectively, and 10 and external deer machine 10. The paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) A7 B7 V. Invention Note () 10 8 is generated. In addition, a single RF energy supply can also be used in conjunction with the optional energy splitter (power splitter) to replace the above design: and it can be used His coil structure, for example, a transformer coupled plasma (TCP) reactor with a flat, spiral induction coil on the top cover C > 92 reactor-system controller 100 can control the mass flow controller 96, heating lamp 88, 94, the cold water supply to the cooling channel 96, the throttle valve of the vacuum pump, and the energy supply sources 84'11, 112, the above functions can control the chemical composition of the etching to achieve the following Conditions. The parameters of the reaction can be stored in the controller 100 using conventional magnetic, optical, or semiconductor memory devices, and read out by the controller 100 from the storage medium inserted therein, generally by the equipment supplier. The magnetic disk or CDROM is used to provide the required parameters to be read by the controller 100. The main advantage of the inductively coupled plasma reactor is that it can transmit different energy to the induction coils 106, 108, And the capacitive stage 82: when the capacitance energy controls the plasma surface area at the crystal chip 80 and thus determines the DC bias of the surface area, the induced energy can generate an electric source area far from the wafer Plasma source energy can be increased to increase the etch rate and control the type and number of atomic groups excited; while the bias energy can be changed to accelerate ions with high or low energy in the surface region * and then with a preset The energy hits the scale of this paper. Use Chinese gardener's standard (^ 5 > From the wash box (2 〖0 > < 297) *) ---------- * 1— (Please read the (Please fill in this page again)

.1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the Invention () Crystal 80. As shown in the fourth figure, after the main etching step 40 is performed by using the above-mentioned etching machine or other types of machines, an etching post-processing process including one or more steps can be performed, and can be performed in the same reaction chamber or machine. On stage. In the first embodiment of the present invention, the post-etching process may mainly include the first oxygen plasma treatment 42, the second hafnium plasma treatment 44, and the third oxygen plasma treatment 46. In a preferred embodiment, the first oxygen plasma treatment 4 2 is performed immediately after the main etching step 40 and is performed in the same reaction chamber, and the use of high-flow gas is used, and the flow rate is about 750 to 1250 sccm. The first oxygen plasma treatment 42 can drive the fluorine remaining in the reaction chamber in the main etching step 40 out of the reaction chamber to stop the etching reaction, and other types of oxygen-containing gas can be used to generate the required oxygen plasma. . By the oxygen plasma treatment, the photoresist layer 58 in the seventh ® can be removed by the first oxygen plasma treatment 42. After the first oxygen plasma treatment 42, the second oxygen plasma treatment 44 is performed in the same reaction chamber, and the lower oxygen flow rate used in the preferred embodiment is between 50 and 200 sccm; and The subsequent third oxygen plasma treatment 46 is performed at a moderate oxygen flow rate, which is about 300 to 700 sccm. In a preferred embodiment, the above three oxygen plasma treatment steps are performed in a continuous manner by adjusting the gas supply flow rate (please read the precautions on the back before filling this page), 4. Order_ This paper size applies to China National Standard (CNS) A4 (210X297 mm) Μ ′

V. Description of the invention () The plasma source energy, bias energy, and other process parameters can be adjusted at the same time as the gas flow rate is changed. ----------- ^-(Please read the notes on the back before filling out this page) In the preferred embodiment, 'Electricity processing 42, 44, and 46 can use the above-mentioned electro-stimulation reaction. In the chamber, the energy of the electrical destruction source is between about 2000 watts and 350,000 watts. In the preferred embodiment of the above-mentioned inductively coupled high-density electropolymerization etching reactor, the first The energy of the plasma source of the inner ring used for an oxygen plasma treatment 42 is between about 500 and 1,000 watts, and the energy of the outer ring is about 2000 to 2500 watts. Order the staff of the Intellectual Property Bureau of the Ministry of Economic Affairs «-printed by the cooperative see the description of the machine above 'The plasma source energy in the inner ring is the energy supplied by the RF energy supply 110 to the inner induction unit 106, and the electricity in the outer ring The energy of the plasma source is the energy supplied by the RF energy supplier 112 to the outer induction unit 108, as shown in the ninth figure " The energy of the plasma source of the inner ring used in the second oxygen plasma treatment 44 is about 400 to 900. Between watts, the electrical energy source of the outer ring is about 1700 to 2200 watts, and a bias energy of about 50 to 200 watts is added: the third oxygen plasma treatment 46 uses the electric power source of the inner ring. The energy is about 500 to 1000 watts, and the plasma source energy of the outer ring is about 2000 to 2500 watts. In the preferred embodiment, the first oxygen plasma treatment 42 and the third oxygen plasma treatment In step 46, the partial ergodic energy is added. In the plasma treatments 42, 44, and 46, the reaction pressure can be adjusted by adjusting the throttle valve, but it will also be affected by the reaction occurring in the reaction chamber. Therefore, its pressure range is about 20 to 200 mTorr. . 13 This paper size adopts Chinese national standard (€ yang) 8 4 specifications (2 〖0 > < 297mm} J A7 B7 V. Description of the invention () By the action of high-flow oxygen plasma in plasma treatment, The effect of ion density and collision is greatly improved, and the photoresist and polymer materials left on the surface of the substrate and the sidewall of the contact hole 60 can be completely removed. Referring to the fifth figure, in the second embodiment of the present invention, After the main etching step 40, a plasma processing step 48 is performed. The reaction gas mainly uses oxygen as the first reaction gas and adds a second reaction gas. The second reaction gas system is a nitrogen-containing gas, a fluorocarbon gas, and carbon. One of the argon-fluorine gas or a combination thereof. In a preferred embodiment, the flow rate of oxygen used in the plasma treatment is about 200 to 600 sccm; and in the case of using nitrogen as the second reaction gas, nitrogen The flow rate is about 50 to 200 sccm. If a fluorocarbon gas is used as the second reaction gas, for example, a commonly used gas such as one or a combination of C2F6, CF4, C3F6, and C4FS can be used. of The total flow of fluorocarbon gas in the preferred example is about 5 to 30 sccm; in addition, one or a combination of fluorocarbon gas such as CH2F2, CHF3, C3H2F6, etc. can be used to replace the fluorocarbon gas, The total flow rate used is also between about 5 and 30 sccm. In a preferred embodiment, the plasma source energy of the reaction chamber is between about 2,000 watts and 3500 watts to use the high density of the inductive coupling described above. In the preferred embodiment of the plasma etching reaction machine, the plasma source energy of the inner ring used in the plasma treatment is about 500 to 1000 Watts, and the plasma source energy of the outer ring is about 2000 to 2500 Watts. And can use the method without applying bias energy --------- k ------ ir ------ r- (Please read the precautions on the back before filling in this Page) This paper size applies to Chinese National Standard (CNS) A4 (210X297 mm)

Fluorocarbon Zhao Chuanhuan participated in the carving. Same as in the first embodiment, the pressure at the plasma can also be adjusted by adjusting the throttle valve, but it will also be affected by the reaction occurring in the reaction chamber of 2, so the pressure change range has reached The reaction is between 200mTorr. 'Approximately 20i. By adding nitrogen-containing plutonium gas, it is possible to further enhance the second effect of ions and substances to be removed, and increase the rate of removal, while the plutonium efficiency of argon ions and atomic plutonium is 1 It can improve the removal rate and ability; in addition, the carbon gas can increase the performance of polymer materials, especially metalized polymer materials. The post-etching process proposed in the present invention can effect the effective removal of photoresist and other residues, and the effect of the number of residues, the use of wafers, etching time, and temperature conditions. As shown in FIG. 8, after the etching post-processing process, a series of subsequent processing processes may be performed to remove the anti-reflection layer 54 ′ under the connection hole 60 to improve the conductivity of the conductive connection and the contact between the rear metal materials. With the method in the present invention, the connection hole 60 that completely removes the residue can be obtained after processing, and the problems of leakage or short circuit in the traditional process can be eliminated. The two main embodiments described above, that is, the three-step plasma processing process and the process of adding a second gas, can be further combined, and more than 15 paper sizes use the Chinese National Standard (CNS) A4 specification. (210X297mm) II nn I nil 丨 ί " ί read the first reading, read the back of the page, ^ reached something ^ and then write this page "printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs C'Or. V. Invention Description (A7 B7 The quality of the substance and its children is high and the process is blocked. The photophysical power is applied to the strong t everywhere. The sudden step should be reversed and added more or more steps. It is issued by familiarity, the essence is only separated from the essence, and the essence is not as good as the hair. After that, it is said that it is practical to set the divine spirit to limit the precision. Mingzhi inventor ’s technical skills, domains and fanfare profit movements, please apply for some additional attachments. After viewing, you can use Dang's scope to protect Fanbao, etc., and wait for them to change. Domain (Please read the notes on the back before (Fill in this page)

、 1T Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper size applies to China National Standard (CNS) A4 specification (210X297 mm)

Claims (1)

AS B8 C8-The scope of benefits for the consumer cooperation of the Ministry of Economic Affairs, the 4th Bureau of Intellectual Property, and the printing of patents for patent applications: 1. An etching post-treatment process for use on a semiconductor substrate with a The dielectric layer of the etching process, the steps of the post-etching process at least include: the first oxygen plasma treatment, which uses an oxygen flow rate between 750 and 1250 sccm; the second oxygen plasma treatment, which uses radon gas The flow rate is between 50 and 200 sccm; and the third oxygen plasma treatment uses an oxygen flow rate between 300 and 700 sccm. 2. For example, apply the post-etching process of item 1 of the patent scope, and add at least one nitrogen-containing gas in at least one of the above-mentioned first oxygen plasma treatment, second oxygen plasma treatment ', and third oxygen plasma treatment. ^ Grunge. 3. For the post-etching process of item 2 of the patent application scope, the nitrogen-containing system mentioned above uses nitrogen, and the flow rate is between 50 and 200 sccm. 4. For the post-etching process of item 1 of the patent application scope, add at least one fluorocarbon in at least one of the first oxygen plasma treatment, second oxygen plasma treatment, and third oxygen plasma treatment. gas. 5. If you apply for the post-etching process of item 4 in the scope of the patent application, there are 17 paper waves on the standard Chinese Standard (CNS) A4 (2! 0 × 297 mm) (Please read the notes on the back before filling in this education ) &quot; A8 The Ministry of Economic Affairs ’s Smart Finance is a fluorocarbon system printed by the Bureau ’s Consumer Cooperatives, which is one of C2FS, CF4 'C3F6, C4FS or a combination thereof β 6-such as the post-etching process of the scope of patent application No. 4 in which the above The total flow of fluorocarbon gas is between 5 and 30 sccm. 7. If the post-etching process of item 1 of the patent scope is applied, at least one kind of hydrocarbon is added in at least one of the first oxygen plasma treatment, second oxygen plasma treatment, and third oxygen plasma treatment. Fluorine gas. 8. For the post-etching process of item 7 in the scope of patent application, the above-mentioned fluorocarbon gas system is one of CH: F2, CHF3, C3H2F6 or a combination thereof. 9. If the post-etching process of item 7 of the scope of patent application is applied, the total flow rate of the above-mentioned hydrocarbon gas is between 5 and 30 sccm. 10. If the post-etching process of item 1 of the scope of patent application is performed by a plasma reaction chamber, the energy of the plasma source is between 2000 watts and 3500 watts. 11. If the post-etching process of item 1 of the scope of patent application is applied, the bias energy used in the above-mentioned second radon plasma treatment step is between 50 watts and 200 watts. 13 Too large paper size applies Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the notes on the back before filling this page) • 11 41 η 〇Γ: T Jtf 8 ^ iQ.2Q A8 B8 C8 D8 Six 2. Application for Patent Scope: Intellectual Property Cooperation Bureau, Ministry of Economic Affairs, Consumer Affairs Cooperation, Du Printing 1 2. If the application for the post-etching process of item 1 of the patent scope, the pressure in the reaction chamber is between 20 and 200 mTorr. 1 3. A post-etching process for use on a semiconductor substrate having a dielectric layer on which an etching process has been performed. The steps of the post-etching process include at least one electrical process. For the slurry treatment, oxygen is used as the first reaction gas, and a second reaction gas is added. The second reaction gas system is one or a combination of a nitrogen-containing gas, a fluorocarbon gas, and a fluorocarbon gas. 14. If the post-etching process of item 13 of the scope of patent application, the oxygen flow rate of the above electric number treatment is between 200 and 600 sccm. 15. According to the post-etching process of item 13 in the scope of patent application, wherein the second reaction gas system uses nitrogen, and its flow rate is between 50 and 200 seem. 16. If the post-etching process of item 13 in the scope of patent application, the above-mentioned fluorocarbon gas system is one of C2F6, CF4, C3F6, (: 4FS or a combination thereof a 1 7. If the scope of patent application is item 13 After the etching process, the total flow of the above fluorocarbon gas is between 5 and 30 sccm. 19 Chinese paper standard (CMS &gt; A4 specification (210X297 mm)) (Please read the note on the back first (Please fill in this page again for matters) 17 89.10.2 &lt; * Article year · Year β 8 Review of ancient 42085 7 ♦ ΑΒ Β8 C8 D8 (Please read the notes on the back before filling this page) 1 8. 13. The post-etching process of item 3, in which the above-mentioned hydrocarbon-fluorine gas system is one of CH2F2, CHF3, C3H2FS or a combination thereof 3 1 9. The post-etching process of item 13 in the scope of patent application, of which the above The total flow of hydrocarbon gas is between 5 and 30 sccm. 20. For example, the post-etching process of item 13 in the scope of patent application is performed by a plasma reaction chamber, where the energy of the plasma source is 2000 Between watts and 3,500 watts. 2 1. If applying for a patent The etching post-processing process around item 13 above, wherein the above-mentioned plasma treatment includes at least: the first oxygen plasma treatment, which uses an oxygen flow rate between 750 and 1250 sccm; the second oxygen plasma treatment, which uses The oxygen flow rate is between 50 and 200 sccm; and the third oxygen plasma treatment uses an oxygen flow rate between 300 and 700 sccm. Printed by the Intellectual Property of the Ministry of Economic Affairs and the Consumer Cooperatives 2 2. If a patent is applied for Fanyuan's 21st post-etching process applies a bias energy of 50 watts to 200 watts for the above-mentioned second oxygen plasma processing step. 20 Chinese paper standard applies to the Chinese National Standard (CNS) A4 size (210X297 mm) k π 7 ^ «.-9 'repair ih. AS BS cs D8 Benefit range 23. If the post-etching process of item 3 of the patent application range, the pressure in the reaction chamber is between 20 and 200 mTorr. 24. A post-etching process for use on a semiconductor substrate having a dielectric layer on which an etching process has been performed. The steps of the post-etching process include at least: the oxygen it uses A flow rate of 750 to an oxygen flow rate of 50 to 1250 sccm of the first oxygen plasma treatment; a range of 200 sccm of a second oxygen plasma treatment; and a third oxygen plasma treatment of an oxygen flow rate 300 to 700 sccm; at least one of the above-mentioned first oxygen plasma treatment, second oxygen plasma treatment, and third oxygen plasma treatment is added with at least one type II gas, at least one fluorine-breaking gas, and at least one A carbon gas gas β 25. As in the post-etching process of item 24 of the patent application scope, wherein the nitrogen-containing system described above uses nitrogen, the flow rate is between 50 and 200 sccm. 26. The post-etching process according to item 24 of the patent application, wherein the above-mentioned fluorocarbon system is one of C2FS, CF4, C3F6, C4F8, or a combination thereof. 21 This paper is fully compliant with Chinese National Standards (CNS) A4 specifications (210X29? Mm) (Please read the notes on the back before filling out this page) Printed by AO no, 5 A8 B8, Employees' Cooperatives, Intellectual Property Bureau, Ministry of Economic Affairs CS D8 Please print out the scope of patents of the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives for printing. 27. If you apply for the post-etching process of item 24 of the patent scope, the total flow of the above-mentioned fluorine-breaking gas is between 5 and 30 sccm. 28. For example, the post-etching process of item 24 in the scope of the patent application, wherein the above-mentioned hydrocarbon gas system is one of CH2F2, CHF3, C3H2F6 or a combination thereof. 29. For example, the post-etching process of item 24 of the scope of patent application, wherein the total flow of the above-mentioned hydrocarbon gas is between 5 and 30 sc cm. 30. If the post-etching process of item 24 of the scope of the patent application is performed by a plasma reaction chamber, the energy of the plasma source is between 2,000 watts and 3,500 watts. 31. For example, the post-etching process of item 24 of the patent application scope, wherein the bias energy used in the second oxygen plasma processing step is between 50 watts and 200 watts. 32. If the post-etching process of item 24 of the application scope of the patent, the pressure of the reaction chamber is between 20 and 200 mTorr "33.-A post-etching process for use on a semiconductor substrate 1 the substrate There is a dielectric layer on which the etching process has been performed. The steps of the post-etching process include at least: 22 This paper size applies to China National Standard (CNS) A4 (210X297 mm) (Please read the precautions on the back first) (Fill in this page) _Fujian · C8 D8 At least one plasma treatment for patent application, using oxygen as the first reaction gas, and adding a second reaction gas, the second reaction gas system is nitrogen, fluorocarbon, and carbon One or a combination of hydrogen and fluorine gas; one or a combination of C2F6, CF4, C3F, and C4F8; and one or a combination of CH2F2 and CHF3 'C3H2F6 Its combination. Printed by the Employees' Cooperatives of the 4th Bureau of the Ministry of Economic Affairs 3 4. For the post-etching process of item 33 in the scope of patent application, the oxygen flow of the above plasma treatment is between 200 and <500 sccm. 35. According to the post-etching process of item 33 in the scope of patent application, wherein the above-mentioned second reaction gas system uses nitrogen, and its flow rate is between 50 and 200 seem. 36. If the post-etching process of item 33 in the scope of patent application, the total flow of the above-mentioned fluorine-breaking gas ceremony is between 5 and 30 sccm. 37. According to the post-etching process of item 33 in the scope of patent application, wherein the total flow of the carbon-hydrogen-fluorine gas is between 5 and 30 sccm. 38. If the post-etching process of item 33 in the scope of patent application is performed by a plasma reaction chamber, the energy of the plasma source is between 2000 watts and 3500 watts. 3 9. If the post-etching process of item 33 of the scope of patent application, 23 paper scales are applicable to China National Standard (CNS) A4 specifications (210X297 mm) (Please read the precautions on the back before filling this page) 4 0857 "" • "A8 ---, B8 2 〇f ^ jX j_S 6. The above plasma treatment includes at least: the first oxygen plasma treatment, the oxygen flow rate used is between 750 and 1250 sccm; The second oxygen plasma treatment uses an oxygen flow rate between 50 and 200 sccm; and the third oxygen plasma treatment uses a radon gas flow between 300 and 700 sccm. 40. For example, the post-etching process of item 39 in the scope of patent application, wherein the bias energy used in the above-mentioned second oxygen plasma treatment step is between 50 watts and 200 watts. 41. For the post-etching process of item 39 in the scope of patent application, the pressure in the reaction chamber is between 20 and 200 mTorr. (Please read the notes on the back before filling out this page) The Ministry of Economic Affairs ’s Smart Money is printed by the Bureau ’s Consumer Cooperatives.